Packaging device, memory device, and semiconductor device

CN115996580BActive Publication Date: 2026-04-14NAN YA TECH
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-02-15
Publication Date
2026-04-14

Smart Images

  • Figure CN115996580B_ABST
    Figure CN115996580B_ABST
Patent Text Reader

Abstract

The present application provides a packaging device. The packaging device includes a first integrated circuit die, a second integrated circuit die, a first input / output pin, and a first electrostatic discharge protection element. The first integrated circuit die includes a first internal circuit and a first input / output pad disposed on the first integrated circuit die and coupled to the first internal circuit. The second integrated circuit die is stacked on the first integrated circuit die. The second integrated circuit die includes a second internal circuit and a second input / output pad disposed on the second integrated circuit die and coupled to the second internal circuit. The first input / output pin is coupled to the first integrated circuit die and the second integrated circuit die. The electrostatic discharge protection element of the present application can reduce the capacitance of the input / output pad of the integrated circuit die, thereby achieving better signal quality, which is conducive to high-performance computing and reducing the operating voltage of the signal.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Semiconductor device, method for manufacturing the semiconductor device and semiconductor substrate

    US20020140107A1

  • Semiconductor device protected from electrostatic discharge

    US20130228867A1