Quantum devices and methods of use

Abstract

The present disclosure relates generally to compositions and devices for hosting qubits, and methods of use. In one embodiment, a quantum device is provided. The quantum device includes a composition comprising a first component comprising a nanotube and a second component comprising a compound comprising a metal-bound cyclic tetrapyrrrole, an ion thereof, or a combination thereof. In another embodiment, a method for controlling a quantum spin is provided. The method includes cooling a composition described herein to a temperature of about 1 K or higher, applying a voltage to the composition, introducing a magnetic field to the composition, and introducing microwave radiation to the composition.

Description

Technical Field

[0001] This disclosure generally relates to compositions and devices for, for example, hosting qubits, and methods of using them. Background Technology

[0002] A qubit is a quantum mechanical simulation of a classical bit and is a component of quantum devices such as quantum computers and sensors. Quantum devices utilize quantum mechanical phenomena such as entanglement and superposition to manipulate data, for example. Entanglement refers to the phenomenon where multiple quantum variables have related states regardless of their spatial or temporal distance, while superposition refers to the phenomenon where a quantum variable can exist in multiple different states simultaneously. Current technologies used to create qubits include superconducting qubits, semiconductor qubits, trapped ion qubits, photonic qubits, neutral atom qubits, and topological qubits.

[0003] However, such techniques have consistently failed to create scalable, fully error-correcting quantum devices or computers capable of performing tasks of genuine interest. Various factors play a role in realizing such quantum devices and computers. For example, to maintain atoms in a superposition and coherent state, quantum devices and computers are typically cooled to near absolute zero and protected from external perturbations. Furthermore, current systems are limited by a two-qubit gate error rate, and scaling depends on the difficulty of achieving low error rates with larger qubit systems. Therefore, it remains unclear whether the aforementioned techniques can scale to the level required for large-scale error-correcting quantum devices and computers.

[0004] Therefore, there is a need for new compositions and devices, as well as methods of use, for hosting qubits. Summary of the Invention

[0005] This disclosure generally relates to compositions and devices for, for example, hosting qubits, and methods of using them.

[0006] In one aspect, a quantum device is provided. The quantum device includes a composition comprising: a first component comprising nanotubes; and a second component comprising a compound comprising metal-bonded cyclic tetrapyrrole, ions thereof, or combinations thereof.

[0007] In another aspect, a device is provided for reading qubits, writing qubits, or both. The device includes a gate electrode, a substrate disposed above at least a portion of the gate electrode, and a source electrode and a drain electrode disposed above the substrate. The device also includes a composition disposed above the substrate, at least a portion of which is disposed between the source electrode and the drain electrode, the composition comprising: a first component comprising nanotubes; and a second component comprising a compound comprising metal-bonded cyclic tetrapyrrole, ions thereof, or combinations thereof.

[0008] In another aspect, a method for controlling quantum spin is provided. The method includes cooling a composition to about 1 K or higher, the composition comprising: a first component containing nanotubes; and a second component containing a compound comprising metal-bonded cyclic tetrapyrrole, its ions, or combinations thereof. The method further includes applying a voltage to the composition, introducing a magnetic field into the composition, and introducing microwave radiation into the composition. Attached Figure Description

[0009] To enable a detailed understanding of the foregoing features of this disclosure, the disclosure, which has been briefly outlined above, can be described in more detail by reference to various aspects, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary aspects and should not be considered as limiting its scope, as other equally effective aspects are permissible with respect to this disclosure.

[0010] Figure 1 This is an illustration of an exemplary composition for hosting qubits, shown as an exemplary molecular structure according to at least one aspect of this disclosure.

[0011] Figure 2A It is possible to form according to at least one aspect of this disclosure. Figure 1 An illustration of an exemplary nanotube, which is a part of an exemplary composition.

[0012] Figure 2B It is possible to form according to at least one aspect of this disclosure. Figure 1 An illustration of an exemplary metal-bonded cyclic tetrapyrrole as part of an exemplary composition.

[0013] Figure 2C This is an illustration of an exemplary composition having a single metal bonded cyclic tetrapyrrole disposed within a nanotube, according to at least one aspect of this disclosure.

[0014] Figure 2D This is an illustration of an exemplary composition having a plurality of metal-bonded cyclic tetrapyrroles disposed within a nanotube, according to at least one aspect of the present disclosure.

[0015] Figure 3 An exemplary quantum device incorporating the composition described herein is shown according to at least one aspect of this disclosure.

[0016] Figure 4 This is a flowchart illustrating selected operations of an exemplary method for controlling the spin, charge, or both of an electron and / or a quantum bit according to at least one aspect of this disclosure.

[0017] Figure 5This is a block diagram of an exemplary quantum computing device according to at least one aspect of this disclosure.

[0018] For ease of understanding, the same reference numerals are used where possible to denote common elements in the figures. It is conceivable that elements and features of one example may be advantageously combined in other examples without further detail. Detailed Implementation

[0019] This disclosure generally relates to compositions and devices for, for example, hosting qubits, and methods of using them. The aspects described herein include quantum devices such as molecular qubit devices, associated computing devices, and methods of using the compositions and quantum devices. Briefly, and in some aspects, the compositions described herein comprise at least two components—a nanotube and a metal-bonded organic compound disposed within the nanotube. The quantum devices described herein include these compositions.

[0020] The aspects described herein enable the formation of molecular quantum bits (“qubits”) in qubit devices and the control of these qubits to perform operations, such as quantum logic operations. Qubits can be used, for example, to write, store, and read information. Compared to state-of-the-art qubit formation methods, the aspects described herein enable improved scalability of the number of qubits in a device and strong spatial localization of qubits. Strong spatial localization of qubits enables, for example, strong control over qubit manipulation and interactions. Furthermore, the aspects described herein can be integrated into larger quantum devices such as quantum computing devices.

[0021] Typically, a qubit houses or hosts a single electron that stores quantum information. For example, spin qubits can be implemented within a qubit and can be initialized, read out, and manipulated, for example. As described herein, the orientation of a qubit (e.g., spin-up and spin-down) can be controlled using a magnetic field. The use of nanotubes can further increase the coherence time of a qubit because it is used to isolate the spin within it from the external environment. In some examples, carbon nanotubes are used. The use of carbon-based nanotubes can, for example, increase the coherence time of the qubit because, for example… 12 C is one of the two stable isotopes of carbon. 13 C is a richer form of (another type), and 12 C has no nuclear spin.

[0022] The use of nanotubes also allows for the control of the quantity (concentration), distance, and position of metal-bonded organic compounds (e.g., metal-bonded cyclic tetrapyrrole), and thereby the control of qubit distribution. The position of the metal-bonded organic compounds can be controlled because, for example, how to move the nanotube to the desired location is known. By being able to move nanotubes containing metal-bonded organic compounds, spin can be brought closer to the surface of the device. Bringing the spin closer to the surface of the device allows for improvements in quantum devices because spin orientation can be better controlled by magnetic fields, optical and / or electromagnetic radiation. The quantity and / or concentration of metal-bonded organic compounds within a single nanotube can be controlled through synthetic methods, allowing for the separation of single or multiple metal-bonded organic compounds within each nanotube.

[0023] As described herein, the inventors have discovered a novel platform for hosting qubits based on, for example, low-cost and chemically modifiable organic semiconductors such as metal-bonded organic compounds. When the metal-bonded organic compound is a metal-bonded cyclic tetrapyrrole, the cyclic tetrapyrrole can act as a multidentate ligand, for example, a metal or metal ion. This metal-bonded cyclic tetrapyrrole can then serve as a host for localized electron spin qubits. Current methods using metal phthalocyanines to host spin qubits have very short coherence times, approximately microseconds. The inventors have addressed this and other problems by using nanotubes to, for example, isolate individual or multiple metal-bonded cyclic tetrapyrroles from environmental perturbations, thereby extending the coherence time of the qubits, and enabling various spatial arrangements of the individual metal-bonded cyclic tetrapyrroles. For example, the spatial distribution of the metal-bonded cyclic tetrapyrroles disposed within the nanotubes can be controlled by arranging the nanotubes, changing the length of the nanotubes, and / or changing other features / configurations of the nanotubes. Furthermore, variations in the number of qubits hosted by the composition described herein, as well as variations in the distance between the nanotubes hosting the qubits, enable the introduction of entanglement between qubits hosted by a metal-bonded ring of four pyrroles. This entanglement phenomenon can be used in quantum devices, quantum computing, and communications.

[0024] The terms molecular quantum bit and quantum bit are used interchangeably in this document unless the context otherwise requires. For example, a molecular quantum bit device may refer to both a molecular quantum bit device and a quantum bit device.

[0025] This disclosure relates generally to compositions, such as compositions for hosting qubits. A non-limiting illustration of an exemplary composition 100 is shown in... Figure 1The diagram illustrates the molecular structure of composition 100. Generally, composition 100 includes a first component 101 and a second component 103. The second component 103 may be disposed within the first component 101 (e.g., disposed inside the first component, located within the first component, contained within the first component, encapsulated within the first component, or otherwise embedded within the first component). The composition may include a plurality of first components, a plurality of second components, or a combination thereof.

[0026] The first component 101 of composition 100 may include nanotubes. An illustration of nanotubes 200 is shown in... Figure 2A As shown in the diagram. Nanotube 200 can be a carbon nanotube, such as a single-walled carbon nanotube, a few-walled carbon nanotube, a multi-walled carbon nanotube, a double-walled carbon nanotube, or a combination thereof. These carbon nanotubes can be doped or undoped. Single-walled carbon nanotubes can be synthesized according to known methods. Any known suitable methods and apparatus (including those for single-walled nanotubes) can be used to synthesize, characterize, co-deposit, and collect few-walled nanotubes, double-walled carbon nanotubes, and multi-walled nanotubes. The length of the carbon nanotubes can range from about 50 nm to about 10 cm or greater, but longer or shorter carbon nanotubes are conceivable. The diameter of the carbon nanotubes can range from about 1 nm to about 10 nm, but longer or shorter diameter nanotubes are conceivable. The nanotubes can be partially cylindrical, substantially cylindrical, or cylindrical and / or partially hollow, substantially hollow, or hollow. Because, for example, the nanotube is at least partially hollow, the second component 103 can be disposed within the nanotube.

[0027] Re-reference Figure 1 The second component 103 of composition 100 may be an organometallic compound (a metal-bonded organometallic compound), its ions, a reaction product of a metal and an organometallic compound, or a combination thereof. In some examples, the second component may be an organometallic compound having a non-zero spin. In some aspects, the second component 103 is a metal-bonded cyclic tetrapyrrole, its ions, a reaction product of a metal and a cyclic tetrapyrrole, or a combination thereof. Figure 1 In this context, component 103 is shown as a metal-bonded cyclic tetrapyrrole. Cyclic tetrapyrroles are a class of compounds comprising four pyrrole or pyrrole-like rings. Examples of cyclic tetrapyrroles that can be used in component 103 include, but are not limited to, phthalocyanines (C... 32 H 18 N8), dihydroporphyrin (C 20 H 16 N4), porphyrin, chlorophyll (C 20 H 16 N4), corrole (C) 19 H 14 N4), porphyrin (C) 20 H14 N4), tetrazaporphyrin (C) 16 H 10 N8), their derivatives, or combinations thereof. Cyclic tetrapyrroles can be tetradentate ligands that can bind metals via at least one nitrogen atom (such as at least two nitrogen atoms, at least three nitrogen atoms, or at least four nitrogen atoms). Cyclic tetrapyrroles can be planar or substantially planar, but non-planar and substantially non-planar cyclic tetrapyrroles are conceivable.

[0028] In some respects, cyclic tetrapyrroles can be unsubstituted or substituted. "Substituted cyclic tetrapyrroles" refers to cyclic tetrapyrroles in which at least one hydrogen atom is substituted by at least one heteroatom or heteroatom-containing group, said at least one heteroatom or heteroatom-containing group being one or more elements such as those in groups 13-17 of the periodic table, such as halogens (F, Cl, Br, or I), O, N, Se, Te, P, As, Sb, S, B, Si, Ge, Sn, Pb, etc., such as C(O)R*, C(C)NR*2, C(O)OR*, NR*2, OR*, SeR*, TeR*, PR*2, AsR*2, SbR*2, SR*, SO x (where x = 2 or 3), BR*2, SiR*3, GeR*3, SnR*3, PbR*3, etc.; or at least one heteroatom has been inserted into a cyclic tetrapyrrole group, said at least one heteroatom being one or more of a halogen (Cl, Br, I, F), O, N, S, Se, Te, NR*, PR*, AsR*, SbR*, BR*, SiR*2, GeR*2, SnR*2, PbR*2, etc., wherein R* is independently hydrogen, a hydrocarbon group (e.g., C1-C), etc. 10 ), or two or more R* may be linked together to form substituted or unsubstituted fully saturated, partially unsaturated, fully unsaturated structures or aromatic cyclic or polycyclic structures.

[0029] The metals in the second group 103 include 3d transition metals, 4d transition metals, or combinations thereof from the periodic table. 3d transition metals belong to the third period of the periodic table and include Sc, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, and combinations thereof. 4d transition metals belong to the fourth period of the periodic table and include Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, and combinations thereof. In some respects, the metals are selected from the group consisting of Sc, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, and combinations thereof, such as Co, Cu, V, and combinations thereof.

[0030] In some respects, the metal is bonded to the cyclic tetrapyrrole as a metal-bonded cyclic tetrapyrrole and / or the reaction product of the metal and the cyclic tetrapyrrole, such as Figure 2B As shown in the non-limiting illustration. In this non-limiting example, the cyclic tetrapyrrole is a phthalocyanine (Pc) and is shown as a metal-bonded phthalocyanine 205 (MPc). The metal, hydrogen, carbon, and nitrogen of MPc 205 are labeled M, H, C, and N, respectively. When a metal is bonded to a phthalocyanine, the phthalocyanine portion of the metal-bonded phthalocyanine 205 can have the formula C 32 H 16 N8. Metal-bonded cyclic tetrapyrroles can be coordination complexes. The spin of the metal is indicated by arrow 210, which indicates that the metal has a spin state. When describing transition metal complexes, spin or spin state refers to the potential spin configuration of the metal's d electrons. The spin or spin state of a metal-bonded cyclic tetrapyrrole can be manipulated by changing the metal and / or the cyclic tetrapyrrole. For example, when the metal-bonded cyclic tetrapyrrole is Cu(II)Pc, there is a hyperfine interaction between copper and the four nitrogen atoms of the Pc ligand. Here, when the metal atom is Cu, the spin can occupy the highest orbital energy state dx. 2 –y 2 (B 1g (State symmetry). As another example, when the metal-bonded cyclic tetrapyrrole is Co(II)Pc, there are or very few hyperhyperfine interactions between the four nitrogen atoms of the cobalt and Pc ligands. Here, when the metal atom is Co, the spin can occupy dz. 2 Orbit (B) 1g (State symmetry), its energy is relatively low.

[0031] The spin coherence time of a qubit can be varied based on, for example, the orbital location of the unpaired spin, because the orbital location of the unpaired spin indicates the probability of it overlapping with the corresponding orbital of a neighboring nitrogen atom. When the overlap is large, the interaction with the nitrogen nucleus magnetic moment is strong (e.g., the strong hyperfine interaction is constant), and it will shorten the spin coherence time.

[0032] As described above, the composition may include one or more first components, one or more second components, or a combination thereof. Figure 2C and Figure 2D A non-limiting illustration shows an exemplary composition having one or more second components 103 (e.g., MPc 205). Specifically, Figure 2C A single MPc 205 disposed within the nanotube 200 is shown, and Figure 2D Two MPcs 205 disposed within the nanotube 200 are shown. Any suitable number of MPc compounds can be disposed within the nanotube.

[0033] Composition 100 can be incorporated into a device such as a quantum device. A quantum device is a device whose operation depends on quantum mechanical effects. The quantum device described herein can be and / or is used as, for example, a quantum computer, a quantum information processing device (e.g., a quantum processor), a quantum magnetometer, a qubit device (or molecular qubit device), a read / write device, a quantum sensor, a spin resonance device (such as a spin resonance imaging device), or a component thereof. In some aspects, one or more of the devices described herein can be used, for example, to read and / or write qubits.

[0034] Figure 3 An exemplary quantum device 300 incorporating the compositions described herein according to at least one aspect of this disclosure is shown. The quantum device 300 is an example of a qubit device. In some examples, the quantum device 300 may operate as a field-effect transistor (FET) (such as a back-gate field-effect transistor (BG-FET)) or otherwise include a field-effect transistor. A BG-FET is a type of transistor that utilizes an electric field to control the flow of current through at least three terminals or electrodes (gate, source, and drain electrodes). Although this device is shown as a field-effect transistor (FET) device, other devices (such as those described above) are contemplated.

[0035] Quantum device 300 includes a gate electrode 305 and a substrate 310 thereon. The substrate 310 is disposed on or above at least a portion of the gate electrode 305. Quantum device 300 may also include a source electrode 315 and a drain electrode 320 disposed above at least a portion of the substrate 310. A composition 325 (such as those described herein, such as metal-bonded organic compounds, such as composition 100 described above) is disposed above the substrate 310. At least a portion of composition 325 may be disposed between the source electrode 315 and the drain electrode 320. In some aspects, and as... Figure 3 As shown, the gap or blank space 330 is located between at least a portion of the substrate 310 and the composition 325.

[0036] Source electrode 315, drain electrode 320, and gate electrode 305 (e.g., back gate electrode) are used to introduce current through composition 325. Gate electrode 305 may provide a potential or charge (e.g., gate-source voltage V) to source electrode 315. G The applied V G The conductivity between the drain electrode 320 and the source electrode 315 can be altered. The drain electrode 320 can receive current from the source electrode 315 based on the charge or potential supplied to the source electrode 315 by the gate electrode 305. Additionally, a source-drain voltage (V) can be applied. SD For example, a current can be generated between the source electrode 315 and the drain electrode 320. Manipulation of various voltages and currents enables electrons to move through various components of the quantum device 300.

[0037] The source electrode 315 and / or drain electrode 320 can be made of various suitable materials (such as magnetic materials, such as Ni, copper, nickel, silver, aluminum, gold, platinum, palladium, bismuth, cobalt, iron, alloys thereof, or combinations thereof). High coercivity materials can also be used for the source electrode 315 and / or drain electrode 320. The gate electrode 305 can be made of various suitable materials (such as silicon, doped silicon, graphene, carbon nanotubes, or combinations thereof).

[0038] In operation, and as further described below, the FET device can be used to control the orientation of a qubit hosted by a composition 325 (e.g., a metal-bonded cyclic tetrapyrrole disposed within a nanotube). Magnetic materials of the source electrode 315 and drain electrode 320 can act as contacts to inject electrons into the composition. Electromagnetic radiation (e.g., microwave radiation 340) can be introduced into the composition 325 to, for example, change the spin direction of the qubit. Additionally, an external magnetic field 350 can be applied to at least a portion of the device 300, such as at least a portion of the composition 325, to, for example, increase the number of spins in a single direction. Because the orientation of the injected electron spin and the qubit spin causes a change in resistance and / or detected current, the detection of resistance and / or current can be used to measure whether the qubit spin is up or down. Electrons from the electrodes have a spin-up or spin-down orientation. Qubits associated with a metal-bonded organic compound (e.g., a metal-bonded cyclic tetrapyrrole) also have a spin-up or spin-down orientation. If both the electrons and qubits are oriented in the same direction as they move toward the drain electrode, such as parallel, a resistance / current can be detected. If the electrons and qubits are oriented in different directions, such as antiparallel, scattering is detected.

[0039] Therefore, and in some aspects, the device described herein may optionally include an electromagnetic radiation source, a magnetic field source, and / or a detector. The electromagnetic radiation source may be a microwave generator configured, for example, to scan a range of frequencies to manipulate quantum spins within the composition. The magnetic field source may be a magnetic field generator configured, for example, to align quantum spins in a preferred orientation. Alternatively or alternatively, the magnetic field generator may be replaced by an electric field generator. The detector is configured, for example, to detect the resistance and / or current flowing through the composition.

[0040] The quantum devices described herein can operate at temperatures of about absolute zero or higher (such as about 1K or higher, about 2K or higher, about 3K or higher, about 4K or higher, about 5K or higher). In some aspects, the quantum devices can operate at temperatures of about absolute zero to about 80K (such as about 1K to about 60K, about 2K to about 40K, about 4K to about 30K, about 2K to about 20K).

[0041] This disclosure also relates generally to methods using the compositions and / or devices described herein. These methods can be used to control the spin, charge, or both of electrons and / or qubits. Such methods can be used to read and write information. In some aspects, the methods utilize the compositions described herein, such as composition 100 or composition 325. The composition can be incorporated into a device such as quantum device 300 or another suitable device.

[0042] Figure 4 This is a flowchart illustrating selected operations of a method 400 for controlling the spin, charge, or both of an electron and / or a qubit according to at least one aspect of this disclosure. Controlling the spin, charge, or both of an electron and / or a qubit includes perturbing, altering, modifying, adjusting, or otherwise influencing the spin, charge, or both. The selected operations can be performed on the compositions and / or devices described herein (such as composition 100, a device incorporating composition 100, or a component of a device incorporating composition 100).

[0043] Method 400 may be initiated by cooling at least a portion of the composition described herein (e.g., composition 100) or at least a portion of a device incorporating composition 100 (such as device 300) to a temperature of about absolute zero or higher (e.g., about 1 K or higher, about 2 K or higher, about 3 K or higher, about 4 K or higher, about 5 K or higher). In some aspects, the operating temperature may be about absolute zero to about 80 K, such as about 1 K to about 60 K, such as about 2 K to about 40 K, such as about 4 K to about 30 K, such as about 2 K to about 20 K.

[0044] Method 400 may further include applying a voltage to at least a portion of the composition 100 at operation 415. As described above, the composition (or a portion thereof) described herein may be disposed between the source electrode and the drain electrode (e.g., source electrode 315 and drain electrode 320), such as Figure 3As shown. Therefore, and in some aspects, operation 415 can take the form of applying a potential difference between the source electrode and the drain electrode (e.g., source electrode 315 and drain electrode 320). Applying a potential difference between the source electrode and the drain electrode allows electrons to move through the composition. The potential difference between the source electrode and the drain electrode can be from about -5V to about 5V, such as from about -4V to about 4V, such as from about -3V to about 3V, such as from about -2V to about 2V, such as from about -1V to about 1V, such as from about -0.5V to about 0.5V, such as from about -0.4V to about 0.4V, such as from about -0.3V to about 0.3V, such as from about -0.2V to about 0.2V, such as from about -0.1V to about 0.1V. Higher or lower potential differences between the source electrode and the drain electrode are conceivable. Operation 415 can be performed before, during, and / or after operation 405. Method 400 is not subject to Figure 3 The limitations of the device shown are that different devices incorporating composition 100 can be used.

[0045] Method 400 may further include introducing a magnetic field into at least a portion of composition 100 and / or at least a portion of a device incorporating the composition described herein (e.g., device 300 incorporating composition 325). For example, the magnetic field may be introduced into composition 100 or a component of the device incorporating composition 100 at operation 425. The magnetic field may originate from an external source that generates an external magnetic field 350. Examples of such sources include electromagnets, stationary permanent magnets, and / or scanning electromagnets. Here, composition 100 may be subjected to, for example, a static magnetic field or a dynamic magnetic field. By applying a magnetic field to composition 100, nuclear spins within the composition may preferentially align with the applied magnetic field. The magnetic field may have a flux density of about 0.1 Tesla (T) to about 2 T (e.g., about 0.2 T to about 1 T, about 0.25 T to about 0.5 T, about 0.3 T to about 0.4 T). The flux density of the magnetic field may depend on the metal of composition 100. In at least one embodiment, the magnetic field can have a flux density of about Tesla (T) to about 14 T (e.g., about 2 T to about 12 T, about 4 T to about 10 T, about 6 T to about 8 T). Higher or lower flux densities are conceivable. The applied magnetic field can be pulsed or continuous.

[0046] Method 400 may also include introducing electromagnetic radiation (e.g., microwave radiation) into the composition 100 or a component of a device incorporating the composition 100 at operation 435. The microwave radiation may have frequencies from about 300 MHz to about 170 GHz (e.g., about 1 GHz to about 150 GHz, about 2 GHz to about 100 GHz, about 5 GHz to about 50 GHz, about 9 GHz to about 35 GHz, or about 10 GHz to about 25 GHz). Higher or lower frequencies are conceivable. In some aspects, the microwave radiation may have frequencies of about 1 GHz or greater and / or about 94 GHz or less (e.g., about 9.3 GHz (X-band) to about 34 GHz (Q-band) or about 110 GHz to about 170 GHz (D-band)).

[0047] The microwave radiation source can be a microwave generator or a microwave frequency generator positioned to irradiate composition 100. The microwave generator or microwave frequency generator generates microwave radiation 340. The microwave generator can be configured to scan a range of microwave frequencies to manipulate one or more of the multiple quantum spins of the metallically bonded tetracyclic pyrrole of composition 100. The microwave radiation can be in the form of pulsed and / or continuous radiation. Each pulse can last for less than about 1 second (e.g., from about 10 milliseconds (ms) to about 950 ms, from about 50 ms to about 900 ms, from about 100 ms to about 800 ms, from about 200 ms to about 700 ms, from about 300 ms to about 700 ms, from about 400 ms to about 600 ms). Longer or shorter time periods are conceivable. The introduction of microwave radiation can occur before, during, and / or after the introduction of a magnetic field. The introduction of a magnetic field can occur before, during, and / or after the introduction of microwave radiation. Each introduction of a magnetic field and / or microwave radiation can occur once or multiple times. The magnetic field and electromagnetic radiation applied to the composition control the orientation of the spins and electrons. Operation 435 can be performed before, during, and / or after operation 425.

[0048] The magnetic field applied to the composition at operation 425 and the microwave radiation applied to the composition at operation 435 can be varied together, such that the change in the applied magnetic field can also be accompanied by the change in the microwave radiation frequency.

[0049] As a non-limiting example, for Cu 2+ Combined organic compounds (e.g., Cu) 2+ The frequency of the microwave radiation can be from about 5 GHz to about 10 GHz, such as from about 8 GHz to about 10 GHz, such as from about 8.5 GHz to about 9.5 GHz, such as about 9 GHz; and / or the flux density of the magnetic field can be from about 0.25 T to about 0.4 T, such as from about 0.3 T to about 0.35 T.

[0050] In some aspects, method 400 may further include applying a voltage to the composition via a gate electrode (such as gate electrode 305). This voltage may modulate the energy levels of the composition and / or its components to allow or prevent electrons from tunneling from the source electrode into and / or from the composition or its components out to the drain electrode. The voltage applied to the gate electrode may be from about -80V to about 80V, such as from about -60V to about 60V, such as from about -40V to about 40V, such as from about -20V to about 20V. In at least one aspect, the voltage applied to the gate electrode is from about -80V to about 0V, such as from about -70V to about -10V, such as from about -60V to about -20V, such as from about -50V to about -30V. In another aspect, the voltage applied to the gate electrode is from about 0V to about 80V, such as from about 10V to about 70V, such as from about 20V to about 60V, such as from about 30V to about 50V. Optionally, a source-drain bias can be applied to the composition via, for example, the source and drain electrodes. The source-drain bias can be about 50 mV or less, such as about 10 mV to about 50 mV, such as about 20 mV to about 40 mV. Higher or lower voltages are conceivable. Applying voltage via the gate electrode can occur before, during, and / or after operation of 405, 415, 425, and / or 435.

[0051] Method 400 may further include measuring and / or detecting current, resistance, and / or magnetoresistance flowing through at least a portion of the composition. The measurement and / or detection of current and / or resistance allows a user or controller to determine whether the spin of the electrons and / or qubits is up or down. For a given external magnetic field, magnetoresistance can be measured and / or detected by dividing the source-drain voltage (V) by the current (I). The current (I) can be measured using a device with the same or similar voltage. In at least one example, the resistance and / or magnetoresistance between the source electrode 315 and the drain electrode 320 can be measured to determine whether the spin of the electrons and / or qubits is up or down.

[0052] Each of the above operations of method 400 can be applied individually to the device (or a component thereof) containing composition 100. The order of operations can be any suitable order, such that one or more of operations 405, 415, 425, or 435 can be performed before, during, and / or after one or more of operations 405, 415, 425, or 435.

[0053] Figure 5 This is a block diagram of an exemplary quantum computing device 500 according to at least one aspect of this disclosure. The quantum computing device 500 may incorporate composition 100 and / or quantum device 300. (The following may be copied or omitted as needed.) Figure 5 Any one or more of the components shown. Additionally, depending on the application, additional components may be included as needed.

[0054] Quantum computing device 500 may include one or more processors 502 (or one or more processing devices). Processors and processing devices refer to, for example, devices or parts of devices that process electronic data from memory and / or registers to convert that electronic data into other electronic data that can be stored in memory and / or registers. One or more processors 502 may include quantum processor 505 and optional non-quantum processors (not shown). Quantum processor 505 may include one or more of the quantum devices 300 disclosed herein and may perform data processing by performing operations on qubits hosted by these quantum devices and monitoring the results of those operations. For example, different qubits may be allowed to interact, the quantum states of different qubits may be set or transformed, and the quantum states of qubits may be read (e.g., by another qubit). Quantum processor 505 may be a general-purpose quantum processor or a dedicated quantum processor configured to run one or more specific quantum algorithms. Quantum processor 505 may execute algorithms suitable for a quantum computer. Quantum processor 505 may also include support circuitry 510 to support the processing capabilities of quantum processor 505, such as multiplexers, signal mixers, input / output channels, analog-to-digital converters, and quantum... For example, quantum processor 505 may include circuitry that provides current to quantum device 300. Optional non-quantum processors (not shown) may provide peripheral logic to support the operation of quantum processor 505. As an example, an optional non-quantum processor may control the execution of write and / or read operations, perform computational functions to support and / or supplement the computational functions provided by quantum processor 505. Optional non-quantum processors may interact with one or more other components of quantum computing device 500, such as display device 530 discussed below. Optional non-quantum processors may include a central processing unit (CPU), graphics processing unit, digital signal processor, application-specific integrated circuit (ASIC), server processor, and / or other suitable processors.

[0055] The quantum computing device 500 may also include a communication chip 515. The communication chip 515 can be configured to manage wireless or non-wireless communication for data communication. The communication chip 515 can implement any number of wireless protocols or standards, such as Institute of Electrical and Electronics Engineers (IEEE) standards, including Wi-Fi (IEEE 802.11 series), IEEE 802.16 standards, and / or Long Term Evolution (LTE) projects, along with any amendments, updates, and / or revisions. The communication chip 515 can operate according to Universal Mobile Telecommunications System (UMTS), Universal Packet Radio Service (GPRS), High Speed ​​Packet Access (HSPA), Evolved HSPA (E-HSPA), Global System for Mobile Communications (GSM), and / or LTE networks. The communication chip 515 can operate according to GSM Enhanced Data Evolution (EDGE), GSM EDGE Radio Access Network (GERAN), Universal Terrestrial Radio Access Network (UTRAN), Evolved UTRAN (E-UTRAN), Time Division Multiple Access (TDMA), Code Division Multiple Access (CDMA), Evolved Data Optimization (EVDO), Digital Enhanced Cordless Telecommunications (DECT), their derivatives, combinations thereof, and any other wireless protocol designated as 3G, 4G, 5G, etc. In some aspects, the communication chip 515 can manage wired communications, such as electrical, optical, or any other suitable communication protocol (e.g., Ethernet). The communication chip 515 may include multiple communication chips, each of which can be independently wired or wireless. In at least one aspect, a first communication chip 515 may be dedicated to wireless communication, and a second communication chip 515 may be dedicated to wired communication. In some respects, the first communication chip 515 can be dedicated to short-range wireless communication, such as Wi-Fi or Bluetooth, and the second communication chip 515 can be dedicated to long-range wireless communication, such as GPRS, CDMA, WiMAX, GPS, EDGE, LTE, EVDO or others.

[0056] The quantum computing device 500 may also include a memory 520. The memory 520 may be a volatile memory (such as dynamic random access memory (DRAM)), a non-volatile memory (such as read-only memory (ROM)), a hard disk drive, solid-state memory, and / or flash memory. The state of the qubits in the quantum processor 505 can be read and stored in the memory 520. The memory 520 may be used as a cache memory and may include embedded spin-transfer torque magnetic random access memory (STT-MRAM) and / or dynamic random access memory (eDRAM). The memory 520 may include memory that shares a die with an optional non-quantum processor. The quantum computing device 500 may include a battery / power circuitry 525. The battery / power circuitry 525 may include one or more energy storage devices (e.g., batteries or capacitors) and / or circuitry for coupling components of the quantum computing device 500 to an energy source (e.g., AC line power) that is isolated from or outside the quantum computing device 500. The quantum computing device 500 may include a display device 530 (or a corresponding interface circuit) and / or an audio input / output device 535 (or a corresponding interface circuit).

[0057] When included in the quantum computing device 500, the display device 530 may include visual indicators such as touchscreen displays, head-up displays, flat panel displays, computer monitors, projectors, liquid crystal displays (LCDs), and / or light-emitting diode displays. Other visual indicators are contemplated. The audio input / output device 535 may include devices that generate audible indicators (such as speakers, headphones, earphones, etc.) and / or devices that generate signals representing sound (such as microphones, microphone arrays, or digital instruments (e.g., instruments with Musical Instrument Digital Interface (MIDI) output)). Other optional output devices (or corresponding interface circuitry) and other optional input devices (or corresponding interface circuitry) may be included in the quantum computing device 500. Non-limiting but illustrative examples of such optional input devices may include image capture devices, keyboards, cursor control devices (such as mice), styluses, touchpads, barcode readers, quick-response (QR) code readers, sensors, radio frequency identification (RFID) readers, compasses, gyroscopes, and / or accelerometers. Non-limiting but illustrative examples of such optional output devices may include wired or wireless transmitters, printers, audio codecs, video codecs, and / or additional storage devices for providing information to other devices. Antenna 540 may also be included in the quantum computing device 500. Antenna 540 may be used to facilitate wireless communication and / or receive other wireless communications, such as FM and / or AM radio transmissions.

[0058] Multiple components in Figure 5The components are shown as being included in quantum computing device 500, but one or more of these components may be omitted or copied, as suited to the application. In some aspects, some or all of these components included in quantum computing device 500 may be attached to one or more printed circuit boards (e.g., a motherboard). In some aspects, various components of these parts may be fabricated on a single system-on-a-chip (SoC) die. Additionally, in various aspects, quantum computing device 500 may not be included in... Figure 5 The diagram shows one or more components, but the quantum computing device 500 may include interface circuitry for coupling to one or more components. For example, the quantum computing device 500 may not include an audio input / output device 535, but may include audio input / output device interface circuitry, such as connectors and support circuitry to which the audio input / output device 535 may be coupled.

[0059] The following embodiments are provided to provide a complete disclosure and description of how to prepare and use various aspects of this disclosure for those skilled in the art, and are not intended to limit the scope of the aspects of this disclosure. Efforts have been made to ensure the accuracy of the numbers used (e.g., quantities, dimensions, etc.), but some experimental errors and deviations should be taken into account.

[0060] Example

[0061] The synthesis of metal-bonded cyclic tetrapyrroles housed within carbon nanotubes can be carried out according to the following non-limiting procedure. The average number of layers and... The average inner diameter and cobalt phthalocyanine (CoPc, Sigma-Aldrich) multi-walled carbon nanotubes were used in this embodiment.

[0062] The purified carbon nanotubes were oxidized in air at approximately 400°C for about 40 minutes, resulting in a weight loss of approximately 40%. This heat treatment opened the nanotube caps and also partially removed amorphous carbon from the surface of the tubes. They were then mixed with an excess of sublimated purified CoPc in a quartz tube at approximately 10 °C. –6 The nanotubes were sealed in a vacuum and heated at approximately 375°C for about three days. CoPc deposits on the exterior of the nanotubes were removed by repeated rinsing with a mixture of chloroform and 1% trifluoroacetic acid. A small fraction of the filled nanotubes was then dispersed onto a transmission electron microscope (TEM) grid. The dried nanotubes were resuspended in methanol and sonicated for approximately 30 minutes. If desired, the nanotubes could then be drop-deposited onto a Si / SiO2 substrate.

[0063] This disclosure generally relates to compositions and devices for, for example, hosting qubits, and methods of using them. The aspects described herein include quantum devices such as molecular quantum bit devices, associated computing devices, and methods of using the compositions and quantum devices. The aspects described herein enable the formation of qubits in quantum devices and the control of these qubits to perform operations, such as quantum logic operations.

[0064] Aspect List

[0065] Among other things, this disclosure also provides for aspects in which each may be considered to optionally include any other aspects:

[0066] Clause 1. A quantum device, said quantum device comprising:

[0067] The composition comprises:

[0068] The first component contains nanotubes; and

[0069] The second component comprises a compound containing metal-bonded cyclic tetrapyrrole, its ions, or combinations thereof.

[0070] Clause 2. The quantum device according to Clause 1, wherein the second component is disposed within the first component.

[0071] Clause 3. The quantum device according to Clause 1 or Clause 2, wherein the nanotube is a single-walled carbon nanotube, a multi-walled carbon nanotube, a few-walled carbon nanotube, a double-walled carbon nanotube, or a combination thereof.

[0072] Clause 4. The quantum device according to any one of Clauses 1-3, wherein the cyclic tetrapyrrole comprises phthalocyanine, dihydroporphyrin, porphyrin, chlorophyll, carbole, porphyrinene, tetrazaporphyrin, or combinations thereof.

[0073] Clause 5. A quantum device according to any one of Clauses 1-4, wherein the metal comprises a 3d transition metal of the periodic table, a 4d transition metal of the periodic table, or a combination thereof.

[0074] Clause 6. The quantum device pursuant to Clause 5, wherein the metal comprises Cu, Co, V, or combinations thereof.

[0075] Clause 7. A quantum device pursuant to any one of Clauses 1-6, wherein the quantum device is a quantum computer, a quantum information processing device, a quantum magnetometer, a quantum bit device, a read / write device, a quantum sensor, a quantum spin resonance device, or a component thereof.

[0076] Clause 8. A quantum device according to any one of Clauses 1-7, wherein the quantum device is configured to operate at a temperature of 4K or higher.

[0077] Clause 9. A device for reading and writing qubits, said device comprising:

[0078] Gate electrode;

[0079] A substrate disposed above at least a portion of the gate electrode;

[0080] The source electrode and drain electrode are disposed above the substrate;

[0081] A composition disposed above the substrate, at least a portion of the composition being disposed between the source electrode and the drain electrode, the composition comprising:

[0082] The first component contains nanotubes; and

[0083] The second component comprises a compound containing metal-bonded cyclic tetrapyrrole, its ions, or combinations thereof.

[0084] Clause 10. The device according to Clause 9, wherein the source electrode and the drain electrode are made of magnetic material.

[0085] Clause 11. The equipment described in Clause 9 or Clause 10, wherein:

[0086] The metals include 3d transition metals of the periodic table, 4d transition metals of the periodic table, or combinations thereof.

[0087] The cyclic tetrapyrrole includes phthalocyanine, dihydroporphyrin, porphyrin, chlorophyll, carbole, porphyrinene, tetrazaporphyrin, or combinations thereof; or

[0088] Their combination.

[0089] Clause 12. The device according to Clause 11, wherein the cyclic tetrapyrrole comprises phthalocyanine.

[0090] Clause 13. The device according to Clause 11 or Clause 12, wherein the metal comprises Cu, Co, V or combinations thereof.

[0091] Clause 14. The device according to any one of Clauses 11-13, wherein the second component is disposed within the first component.

[0092] Clause 15. The device according to any one of Clauses 11-14, wherein the nanotube is a single-walled carbon nanotube, a multi-walled carbon nanotube, a double-walled carbon nanotube, a few-walled carbon nanotube, or a combination thereof.

[0093] Clause 16. A method for controlling quantum spin, the method comprising:

[0094] Cool the composition to about 1K or higher, the composition comprising:

[0095] The first component contains nanotubes; and

[0096] The second component comprises a compound comprising a metal-bonded cyclic tetrapyrrole, its ions, or a combination thereof;

[0097] Apply a voltage to the composition;

[0098] Introducing a magnetic field into the composition; and

[0099] Microwave radiation is introduced into the composition.

[0100] Clause 17. The method according to Clause 16, the method further comprising detecting resistance, magnetoresistance, current, or a combination thereof, wherein the resistance, magnetoresistance, current, or combination thereof is related to the orientation of the quantum spin.

[0101] Clause 18. The method according to Clause 16 or Clause 17, wherein the method is configured to control the reading and writing of qubits.

[0102] Clause 19. The method according to any one of Clauses 16-18, wherein at least a portion of the method is carried out at a temperature greater than 1 K.

[0103] Clause 20. The method according to any one of Clauses 16 to 19, wherein:

[0104] The metals include 3d transition metals of the periodic table, 4d transition metals of the periodic table, or combinations thereof.

[0105] The cyclic tetrapyrrole includes phthalocyanine, dihydroporphyrin, chlorophyll, porphyrin, carboxylic acid, porphyrinene, tetrazaporphyrin, or combinations thereof; or

[0106] Their combination.

[0107] It will be apparent from the foregoing general description and specific aspects that, while various forms have been illustrated and described, various modifications may be made without departing from the spirit and scope of this disclosure. Therefore, this disclosure is not intended to be limited thereto. Similarly, the term “comprising” is considered synonymous with the term “including.” Likewise, whenever the transitional phrase “comprising” precedes a composition, element, or group of elements, it should be understood that the same composition or group of elements is also contemplated to have the transitional phrases “consistently composed of,” “composed of,” “selected from,” or “is” preceding the detailed description of the composition or one or more elements, and vice versa; for example, the terms “comprising,” “consistently composed of,” and “composed of” also include the product of combinations of elements listed after that term.

[0108] For the purposes of this disclosure, and unless otherwise specified, all numerical values ​​in the detailed descriptions and claims herein are indicated by “about” or “approximately”, taking into account experimental errors and variations that would be expected by one of ordinary skill in the art. For the sake of brevity, only certain ranges are explicitly disclosed herein. However, a range beginning with any lower limit may be combined with any upper limit to enumerate ranges not explicitly enumerated, and a range beginning with any lower limit may be combined with any other lower limit to enumerate ranges not explicitly enumerated, and in the same manner, a range beginning with any upper limit may be combined with any other upper limit to enumerate ranges not explicitly enumerated. Furthermore, even if not explicitly enumerated, a range includes every point or individual value between its endpoints. Thus, each point or individual value may be used as its own lower or upper limit, combined with any other point or individual value or any other lower or upper limit, to enumerate ranges not explicitly enumerated.

[0109] As used herein, the indefinite article “a” or “an” shall mean “at least one” unless otherwise indicated by the contrary or by the context. For example, an aspect containing “nanotube” includes an aspect containing one, two or more nanotubes, unless otherwise indicated by the contrary or by the context.

[0110] While the foregoing relates to aspects of this disclosure, other and further aspects of this disclosure may be designed without departing from the basic scope of the invention, the scope of which is defined by the appended claims.

Claims

1. A device for reading qubits, writing qubits, or both, said device comprising: Gate electrode; A substrate disposed above at least a portion of the gate electrode; A source electrode and a drain electrode, wherein the source electrode and the drain electrode are disposed above the substrate; A composition, wherein the composition is disposed above the substrate, and at least a portion thereof is disposed between the source electrode and the drain electrode, the composition comprising: Nanotubes having an average number of layers between 3 and 6 and an average inner diameter of (24 ± 3) Å; and Each of the nanotubes is encapsulated with a metal-bonded cyclic tetrapyrrole, its ions, or combinations thereof, wherein the metal in the metal-bonded cyclic tetrapyrrole includes Cu or V, and the cyclic tetrapyrrole includes phthalocyanine, dihydroporphyrin, porphyrin, chlorophyll, carbole, porphyrinene, tetrazaporphyrin, or combinations thereof.

2. The device according to claim 1, wherein the source electrode and the drain electrode are made of magnetic material.

3. The device of claim 1, wherein the cyclic tetrapyrrole comprises phthalocyanine.

4. The device according to claim 1, wherein the nanotube is a single-walled carbon nanotube, a multi-walled carbon nanotube, a double-walled carbon nanotube, a few-walled carbon nanotube, or a combination thereof.

5. A method for controlling quantum spin, the method comprising: Cool the composition to about 1K or higher, the composition comprising: Multi-walled carbon nanotubes having an average number of layers between 3 and 6, and having an average inner diameter of (24±3) Å. and Metal-bonded cyclic tetrapyrroles, their ions, or combinations thereof are encapsulated in each of the multi-walled carbon nanotubes, wherein the metal in the metal-bonded cyclic tetrapyrroles includes Cu or V. Apply a voltage to the composition; Introduce a magnetic field into the composition; as well as Microwave radiation is introduced into the composition.

6. The method of claim 5, further comprising detecting resistance, magnetoresistance, current, or a combination thereof, wherein the resistance, magnetoresistance, current, or combination thereof is related to the orientation of the quantum spin.

7. The method of claim 5, wherein the method is configured to control the reading and writing of qubits.

8. The method of claim 5, wherein at least a portion of the method is performed at a temperature of 4K or higher.

9. The method of claim 5, wherein the cyclic tetrapyrrole in the metal-bonded cyclic tetrapyrrole comprises phthalocyanine, dihydroporphyrin, chlorophyll, porphyrin, carboxylic acid, porphyrinene, tetrazaporphyrin, or combinations thereof.

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