Method for manufacturing semiconductor device

CN115997284BActive Publication Date: 2025-01-28MITSUBISHI ELECTRIC CORP
3 Cites 0 Cited by

Patent Information

Application Number
CN202080105006.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-09-18
Publication Date
2025-01-28
Estimated Expiration
2040-09-18

Smart Images

  • Figure CN115997284B_ABST
    Figure CN115997284B_ABST
Patent Text Reader

Abstract

A polycrystalline diamond substrate having a first main surface and a second main surface, wherein a surface having an average grain size smaller than that of the first and second main surfaces is located between the first and second main surfaces.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Semiconductor stacked structure and semiconductor device

    JP2018049868A

  • Polycrystalline-diamond sintered compact tool having exceptional interface joining strength, and method for manufacturing said tool

    CN108472738A

  • Production method of diamond substrate and production method of semiconductor device

    JP2018024541A