Silicon carbide single crystal furnace

Abstract

The application discloses a silicon carbide single crystal furnace, and belongs to the technical field of silicon carbide single crystal furnaces.The silicon carbide single crystal furnace comprises a reaction zone, and the reaction zone comprises a reaction crucible; a reaction cover is arranged on the outer side of the reaction crucible; an induction coil is arranged on the reaction cover; a first lifting assembly is arranged on the induction coil; a second lifting assembly for lifting the reaction crucible and a rotating assembly for rotating the reaction crucibble are arranged on the bottom of the reaction crucible; the first lifting assembly comprises a positioning screw rod, a first sliding block, a moving screw rod and a fixing support; the positioning screw rod and the moving screw rod are arranged on the fixing support; the first sliding block passes through the positioning screw rod and slides on the positioning screw rod; one side of the first sliding block is connected with the induction coil; the other side of the first sliding block is connected with the moving screw rod; and a power assembly is arranged on the fixing support. The second lifting assembly and the rotating assembly arranged on the reaction crucible enable the reaction crucible to rotate and lift in the reaction zone, so that the heating is uniform and the reaction is complete.

Description

Technical Field

[0001] This invention relates to the field of silicon carbide single crystal furnace technology, and more particularly to a silicon carbide single crystal furnace. Background Technology

[0002] Silicon carbide (SiC) is an inorganic compound produced by high-temperature smelting in an electric resistance furnace from raw materials such as quartz sand, petroleum coke (or coal coke), and sawdust (salt is added when producing green silicon carbide). Silicon carbide also exists in nature as a rare mineral, moissanite. Among non-oxide high-tech refractory materials such as C, N, and B, silicon carbide is the most widely used and economical, and can be called carborundum or refractory sand. Industrially produced silicon carbide in China is divided into two types: black silicon carbide and green silicon carbide. Both are hexagonal crystals with a specific gravity of 3.20–3.25 and a microhardness of 2840–3320 kg / mm².

[0003] A single crystal furnace is a device that melts polycrystalline materials such as polycrystalline silicon in an inert gas environment (mainly nitrogen and helium) using a graphite heater, and grows dislocation-free single crystals using the Czochralski method.

[0004] In the prior art, single crystal furnaces used for preparing silicon carbide, such as the one described in Chinese Patent Publication No. CN111850678A, relate to the field of single crystal furnaces. In particular, a lifting and rotating device for a secondary furnace chamber of a single crystal furnace is provided on one side of the main furnace chamber and connected to the secondary furnace chamber. It includes a support frame, a lifting mechanism, a rotating mechanism, and a connecting mechanism for connecting the secondary furnace chamber. The support frame is connected to the frame of the main furnace chamber and a main shaft is provided on the support frame. The lifting mechanism is provided on the support frame and movably connected to the main shaft. The rotating mechanism is provided on the top of the support frame and connected to the main shaft. One end of the connecting mechanism is connected to the lifting mechanism, and the other end is connected to the rotating mechanism. The connecting mechanism is provided on the side of the main shaft and fixedly connected to the main shaft.

[0005] Because the lifting and rotating devices are designed as a single unit, the overall structure of the single crystal furnace is more complex, increasing the overall usable space of the single crystal furnace and making it inconvenient for production. Summary of the Invention

[0006] The present invention provides a silicon carbide single crystal furnace in which the reaction crucible and the induction coil are respectively equipped with lifting components, and the reaction crucible is also equipped with a rotating component, so that the various components can be heated uniformly without interfering with each other.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] A silicon carbide single crystal furnace includes a reaction zone, which includes a reaction crucible. A reaction shroud is disposed outside the reaction crucible, and an induction coil is disposed outside the reaction shroud. A first lifting assembly is disposed on the induction coil. A second lifting assembly for lifting the reaction crucible and a rotating assembly for rotating the reaction crucible are disposed at the bottom of the reaction crucible. The first lifting assembly includes a positioning screw, a first slider, a moving screw, and a fixed bracket. The positioning screw and the moving screw are located on the fixed bracket. The first slider passes through the positioning screw and slides on the positioning screw. One side of the first slider is connected to the induction coil, and the other side of the first slider is connected to the moving screw. An electric component for driving the first slider to move is disposed on the fixed bracket.

[0009] A preferred embodiment of the present invention is that the second lifting assembly includes a lifting bracket, a motor, a worm gear, and a worm. A base plate is disposed at the bottom of the reaction crucible, and a connecting rod connects the reaction crucible and the base plate. The motor, the worm gear, and the worm are installed at the bottom of the lifting bracket. The motor is connected to the worm gear, and the worm is connected to the base plate. The worm drives the worm gear to rotate via the motor, thereby driving the worm to lift. The second lifting assembly further includes a vibration damping component, a positioning slide rail, and a positioning slider. The positioning slide rail and the positioning slider are installed on the lifting bracket and located at the worm. On both sides of the positioning slide rail, first limiters are provided at both ends; the vibration damping assembly includes a vibration damping plate and a connecting plate. The vibration damping plate is installed on both sides of the bottom of the base plate, and the connecting plate is installed on the positioning slider. A vibration damping spring is arranged between the vibration damping plate and the connecting plate; a worm gear fixing plate is also connected between the two connecting plates. The worm gear fixing plate is provided with a fixing hole, and the worm is fixed in the fixing hole of the worm gear fixing plate; the second lifting assembly also includes a limit rod. The positioning slide rail is provided with a positioning hole, and the limit rod is inserted into the positioning hole of the positioning slide rail, located below the positioning slider.

[0010] A preferred embodiment of the present invention further includes a rotating assembly located at the bottom center of the base plate. The rotating assembly includes a rotating rod connected to the connecting rod. The rotating assembly also includes a driving gear and a driven gear connected by a belt. The driven gear is located below the connecting rod and connected to it. The driving gear is located on one side of the driven gear, and a motor is connected to the driving gear.

[0011] A preferred embodiment of the present invention includes a first positioning block and a second positioning block disposed on the movable lead screw, the second positioning block being located below the first positioning block, and the first positioning block and the second positioning block being located on opposite sides of the first slider; it also includes a second slider and a second limiter, the second slider passing through the positioning lead screw, the second slider being located below the first slider, and the second slider being located on the side of the second positioning block away from the first positioning block, the second limiter being fixed on the fixed bracket, and located on opposite sides of the first positioning block; a fixed rod disposed on the induction coil, one end of the fixed rod being located at the top end of the induction coil, and the other end of the fixed rod being located at the bottom end of the induction coil; a fixing plate for mounting the first slider and the second slider is provided on the fixed rod.

[0012] A preferred embodiment of the present invention further includes a buffer protector located at the top of the moving lead screw, the buffer protector comprising a spring.

[0013] A preferred embodiment of the present invention further includes a power supply zone, a vacuum zone, a cooling zone, and a gas zone. The vacuum zone and the cooling zone are located at the top and bottom of the reaction zone, respectively. The power supply zone is located on one side of the reaction zone, and the gas zone is located on the other side of the power supply zone. A quartz tube and an inductive capacitor are provided in the reaction zone. The quartz tube is located on both sides of the reaction zone. The inductive coil is hollow and has a cooling tube. An inductive capacitor is located at the bottom of the reaction zone. A vacuum tube for introducing inert gas is also provided in the reaction zone.

[0014] A preferred embodiment of the present invention is that a water outlet pipe is provided at the top of the reaction zone, a water pump is provided in the cooling zone, and the water pump is connected to several cooling water pipe passages, including a quartz cooling passage for cooling the quartz tube, a capacitor cooling passage for cooling the inductive capacitor, a coil cooling passage for cooling the inductive coil, and a vacuum cooling passage for cooling the vacuum tube; the cooled water is discharged through the water outlet pipe.

[0015] A preferred embodiment of the present invention is that a vacuum assembly for evacuating air is provided within the vacuum zone.

[0016] A preferred embodiment of the present invention is that the power supply area is equipped with an inductive power supply, the inductive power supply is connected to the inductive capacitor, and the gas area is equipped with an inert gas for introducing into the reaction zone.

[0017] The beneficial effects of this invention are as follows:

[0018] (1) By setting a second lifting component and a rotating component on the reaction crucible, the reaction crucible can rotate and rise and fall in the reaction zone, so that the heating is uniform and the reaction is complete.

[0019] (2) By setting a first lifting component on the induction coil, the induction coil can be raised and lowered outside the reaction crucible for heating, making the heating more uniform during the reaction process.

[0020] (3) By setting up multiple cooling channels, each unit that is prone to overheating can be cooled in time, and the single crystal furnace cools down quickly.

[0021] (4) By setting up multiple zones, the overall division of labor of the single crystal furnace is clear.

[0022] By making the induction coil hollow and introducing cooling liquid into the induction coil through a cooling path, the induction coil is cooled rapidly. Attached Figure Description

[0023] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In these drawings, similar reference numerals are used to denote similar elements. The drawings described below are some embodiments of the invention, but not all embodiments. Other drawings will be readily available to those skilled in the art based on these drawings without any inventive effort.

[0024] Figure 1 This is a schematic diagram of the overall structure of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0025] Figure 2 This is a schematic diagram of the first lifting component of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0026] Figure 3 This is a schematic diagram of the first lifting component of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0027] Figure 4 This is a schematic diagram of the first lifting component of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0028] Figure 5 This is a schematic diagram of the first lifting component of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0029] Figure 6 This is a schematic diagram of the first lifting component of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0030] Figure 7This is a schematic diagram of the structure of the induction coil part of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0031] Figure 8 This is a schematic diagram of the structure of the induction coil part of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0032] Figure 9 This is a schematic diagram of the overall structure of the gas zone of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0033] Figure 10 This is a schematic diagram of the overall structure of the power supply area of ​​the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0034] Figure 11 This is a schematic diagram of a portion of the cooling zone structure of a silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0035] Figure 12 This is a schematic diagram of the overall structure of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0036] Figure 13 This is a schematic diagram of the reaction zone and vacuum zone of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0037] Figure 14 This is a schematic diagram of the overall structure of the second lifting assembly of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0038] Figure 15 This is a schematic diagram of the overall structure of the silicon carbide single crystal furnace rotating assembly and vibration damping assembly provided in a specific embodiment of the present invention;

[0039] Figure 16 This is a schematic diagram of the overall structure of the silicon carbide single crystal furnace rotating assembly and vibration damping assembly provided in a specific embodiment of the present invention;

[0040] Figure 17 This is a schematic diagram of the second lifting component of the silicon carbide single crystal furnace provided in a specific embodiment of the present invention;

[0041] In the picture:

[0042] 1. Reaction zone; 11. Reaction crucible; 1111. Lifting support; 1112. Motor; 1113. Worm gear; 1114. Worm; 1115. Vibration damping plate; 1116. Connecting plate; 1117. Vibration damping spring; 1118. Limiting rod; 1119. Positioning slide rail; 1110. Positioning slider; 1121. Rotating rod; 1122. Driving gear; 1123. Driven gear; 1124. Motor; 1125. Belt; 113. Connecting rod; 114. Base plate; 115. Worm fixing plate; 1151. Fixing hole; 12. Reaction hood; 13. Induction coil; 1311. Positioning lead screw; 1312. First slider; 1313. Moving lead screw; 1 314. Fixed bracket; 1315. Power assembly; 1316. First positioning block; 1317. Second positioning block; 1318. Second slider; 132. Fixed rod; 133. Fixed plate; 134. Cooling pipe; 1341. Water inlet; 1342. Water outlet; 14. Buffer protector; 15. Second limiter; 16. Quartz tube; 17. Inductive capacitor; 19. Water outlet pipe; 2. Power supply area; 21. Inductive power supply; 3. Vacuum area; 31. Vacuum assembly; 4. Cooling area; 41. Water pump; 411. Quartz cooling passage; 412. Capacitor cooling passage; 413. Coil cooling passage; 414. Vacuum cooling passage; 5. Gas area; 6. First limiter. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be arbitrarily combined with each other.

[0044] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0045] like Figure 2-6As shown, the present invention provides a silicon carbide single crystal furnace, including a reaction zone 1. The reaction zone 1 includes a reaction crucible 11 and an induction coil 13. The induction coil 13 is equipped with a first lifting assembly, a second lifting assembly of the reaction crucible 11, and a rotating assembly. The first lifting assembly includes the induction coil 13 surrounding the outside of the reaction crucible 11. A glass reaction cover 12 is disposed outside the reaction crucible 11, sealing the reaction crucible 11 within the reaction cover 12. The induction coil 13 is located outside the reaction cover 12, and there is a gap between the reaction cover 12 and the induction coil 13, allowing the induction coil 13 to move outside the reaction cover 12. Several fixing rods 132 are fixed to the induction coil 13. One end of each fixing rod 132 is located on the top coil of the induction coil 13, and the other end is located on the bottom coil of the induction coil 13, making the connection between the fixing rods 132 and the first slider 1312 and the second slider 1318 more stable. A fixing plate 133 is disposed on the fixing rod 132 for fixing the first slider 1312 and the second slider 1318. Each fixed rod 132 is equipped with a first slider 1312 and a second slider 1318, which pass through a positioning screw 1311. One side of the first slider 1312 and the second slider 1318 is fixed to the fixed plate 133 of the fixed rod 132, and the other side is fixed to the moving screw 1313. The sliders drive the induction coil 13 to move up and down on the positioning screw 1311. Both the positioning screw 1311 and the moving screw 1313 are fixed to the fixed bracket 1. On the movable lead screw 1313, a first positioning block 1316 and a second positioning block 1317 are provided. The first positioning block 1316 and the second positioning block 1317 are located on both sides of the first slider 1312. The first positioning block 1316 and the second positioning block 1317 are used to control the displacement range of the first slider 1312. When the first slider 1312 accidentally falls out of the range of the first positioning block 1316, it can be buffered and protected by the buffer protector 14 at the top. The buffer protector 14 includes a spring. The first slider 1312 is connected to a connecting plate on one side of the movable lead screw 1313 to drive the first slider 1312 to move. The first slider 1312 is driven to lift and lower by the power component 1315 fixed to the top of the fixed bracket 1314. The power component 1315 can be a drive motor or a motor. The fixed bracket 1314 is also provided with a second limiter 15, located on both sides of the first positioning block 1316, to prevent the induction coil 13 from falling off the positioning lead screw 1311 due to excessive displacement of the first lifting component.

[0046] like Figure 14-17As shown, the second lifting assembly includes a lifting bracket 1111, the reaction crucible 11 is mounted on the lifting bracket 1111, the bottom of the reaction crucible 11 is provided with a base plate 114, the bottom of the base plate 114 is connected to a second lifting assembly for controlling the lifting of the base plate 114, and a connecting rod 113 is connected between the reaction crucible 11 and the base plate 114.

[0047] The second lifting assembly includes a worm gear 1113, a worm 1114, and a motor 1112 for driving the worm gear 1113 to rotate. One end of the worm 1114 is located on the bottom of the lifting bracket 1111 and connected to the worm gear 1113, and the other end is connected to the base plate 114. The motor 1112 drives the worm gear 1113, thereby driving the worm 1114 to lift and lower.

[0048] The second lifting assembly also includes a positioning slide rail 1119 and a positioning slider 1110, which are respectively installed on both sides of the worm gear 1114. The positioning slider 1110 is also provided with a vibration damping assembly, which includes a vibration damping plate 1115 and a connecting plate 1116. The vibration damping plate 1115 is installed at the bottom of the base plate 114, and the connecting plate 1116 is also provided at the opposite position of the vibration damping plate 1115. The connecting plate 1116 is connected to the positioning slider 1110, and the connecting plate 1116 and the vibration damping plate 1115 are connected by a vibration damping spring 1117, so that the reaction crucible 11 can reduce vibration and make the lifting more stable when it is lifted. The positioning is achieved by the positioning slide rail 1119 and the positioning slider 1110 to prevent deviation during the lifting process.

[0049] To prevent the positioning slider 1110 from displacing too much, first limiters 6 are provided at both ends of the positioning slide rail 1119 to control the displacement of the second lifting component.

[0050] To prevent the reaction crucible 11 from falling due to insufficient torque of the motor 1112, a positioning hole is provided on the positioning slide rail 1119, and a limiting rod 1118 is inserted into the positioning hole.

[0051] To make the lifting assembly more stable, a mounting plate is provided on the top of the positioning slide rail 1119, and the worm gear 1114 is located inside the mounting plate.

[0052] In order for the worm gear 1114 to drive the base plate 114 to rise and fall, a worm gear fixing plate 115 for fixing the worm gear 1114 is connected between the connecting plates 1116 of the vibration damping assembly. The worm gear fixing plate 115 has a fixing hole 1151, and the worm gear 1114 is installed in the fixing hole 1151. When the power assembly 1315 drives the worm gear 1114 to rise and fall, it also drives the base plate 114 and the reaction crucible 11 to rise and fall together.

[0053] To enable the reaction crucible 11 to rotate and achieve more uniform heating, a rotating assembly is connected to the bottom of the reaction crucible 11. The rotating assembly includes a driving gear 1122 and a driven gear 1123. A connecting rod 113 is provided at the bottom of the reaction crucible 11. The rotating assembly includes a rotating rod 1121, one end of which is connected to the connecting rod 113, and the other end is connected to the driven gear 1123. The driven gear 1123 is connected to the driving gear 1122 via a belt 1125. A motor 1124 is provided at the bottom of the driving gear 1122. The motor 1124 drives the gear to rotate, thereby driving the reaction crucible 11 to rotate.

[0054] When the reaction crucible 11 is reacting, the motor 1112 can be turned on, and the worm gear 1114 can drive the base plate 114 and the reaction crucible 11 connected to the base plate 114 by the connecting rod 113 to move it up and down. If necessary, the motor 1124 can also be turned on, and the drive gear 1122 can rotate the belt 1125 to drive the driven gear 1123 to rotate. After the rotating rod 1121 and the connecting rod 113 rotate, the reaction crucible 11 will also rotate, making the heating more uniform and the reaction more complete.

[0055] Alternatively, by turning on the power component 1315, the induction coil 13 can be raised and lowered outside the reaction crucible 11, resulting in more uniform heating.

[0056] like Figure 1 And such as Figure 9-13 As shown, it also includes a vacuum zone 3, a power supply zone 2, a gas zone 5, and a cooling zone 4. The vacuum zone 3 is located at the top of the reaction zone 1 and is equipped with a vacuum assembly 31 for evacuating the reaction zone 1 to a vacuum state. A vacuum tube is installed in the reaction zone 1. The power supply zone 2 is located on one side of the reaction zone 1 and is equipped with an inductive power supply 21. An inductive capacitor 17 is installed in the reaction zone 1. A quartz tube 16 for cooling and a water outlet pipe 19 for water discharge are installed in the reaction zone 1. The cooling zone 4 is located at the bottom of the reaction zone 1 and is equipped with a water pump 41. The water pump 41 is connected to several cooling passages, including a quartz cooling passage 411 for cooling the quartz tube 16, a capacitor cooling passage 412 for cooling the inductive capacitor 17, a coil cooling passage 413 for cooling the induction coil 13, and a vacuum cooling passage 414 for cooling the vacuum tube. The cooled water is discharged through the water outlet pipe 19. The gas zone 5 is used to provide inert gas.

[0057] like Figure 7-8As shown, the induction coil 13 is hollow and a cooling pipe 134 is provided on the induction coil 13. The cooling pipe 134 is connected to the induction coil 13. The cooling pipe 134 is provided with an inlet 1341 and an outlet 1342. The coil cooling passage 413 enters through the inlet 1341, is cooled in the induction coil 13, and is discharged through the outlet 1342 into the outlet pipe 19.

[0058] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the article or apparatus that includes that element.

[0059] The above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. The present invention has been described in detail with reference to preferred embodiments. Those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the present invention, and all such modifications and substitutions should be covered within the scope of the claims of the present invention.

Claims

1. A silicon carbide single crystal furnace, characterized in that: The reaction zone (1) includes a reaction crucible (11), a reaction shroud (12) is disposed on the outside of the reaction crucible (11), an induction coil (13) is disposed on the outer sleeve of the reaction shroud (12), a first lifting assembly is disposed on the induction coil (13), and a second lifting assembly for lifting the reaction crucible (11) and a rotating assembly for rotating the reaction crucible (11) are disposed at the bottom of the reaction crucible (11). The first lifting assembly includes a positioning screw (1311), a first slider (1312), a moving screw (1313), and a fixed bracket (1314). The positioning screw (1311) and the moving screw (1313) are located on the fixed bracket (1314). The first slider (1312) passes through the positioning screw (1311) and slides on the positioning screw (1311). One side of the first slider (1312) is connected to the induction coil (13), and the other side of the first slider (1312) is connected to the moving screw (1313). The fixed bracket (1314) is equipped with a power assembly (1315) for driving the first slider (1312) to move. The movable lead screw (1313) is provided with a first positioning block (1316) and a second positioning block (1317). The second positioning block (1317) is located below the first positioning block (1316), and the first positioning block (1316) and the second positioning block (1317) are respectively located on both sides of the first slider (1312). It also includes a second slider (1318) and a second limiter (15). The second slider (1318) passes through the positioning screw (1311). The second slider (1318) is located below the first slider (1312) and is located on the side of the second positioning block (1317) away from the first positioning block (1316). The second limiter (15) is fixed on the fixed bracket (1314) and is located on both sides of the first positioning block (1316). A fixing rod (132) is disposed on the induction coil (13), one end of the fixing rod (132) is located at the top of the induction coil (13), and the other end of the fixing rod (132) is located at the bottom of the induction coil (13); a fixing plate (133) for mounting the first slider (1312) and the second slider (1318) is provided on the fixing rod (132).

2. The silicon carbide single crystal furnace according to claim 1, characterized in that: The second lifting assembly includes a lifting bracket (1111), a motor (1112), a worm gear (1113), and a worm (1114). The bottom of the reaction crucible (11) is provided with a base plate (114), and a connecting rod (113) is connected between the reaction crucible (11) and the base plate (114). The motor (1112), the worm gear (1113), and the worm (1114) are installed at the bottom of the lifting bracket (1111). The motor (1112) is connected to the worm gear (1113), and the worm (1114) is connected to the base plate (114). The worm (1114) is driven to move up and down by the worm gear (1113) through the motor (1112). The second lifting assembly also includes a vibration damping assembly, a positioning slide rail (1119), and a positioning slider (1110). The positioning slide rail (1119) and the positioning slider (1110) are mounted on the lifting bracket (1111) and located on both sides of the worm gear (1114). The two ends of the positioning slide rail (1119) are provided with first limiters (6). The vibration damping assembly includes a damping plate (1115) and a connecting plate (1116). The damping plate (1115) is installed on both sides of the bottom of the base plate (114), and the connecting plate (1116) is installed on the positioning slider (1110). A damping spring (1117) is disposed between the damping plate (1115) and the connecting plate (1116). A worm gear fixing plate (115) is also connected between the two connecting plates (1116). The worm gear fixing plate (115) is provided with a fixing hole (1151), and the worm (1114) is fixed in the fixing hole (1151) of the worm gear fixing plate (115). The second lifting assembly also includes a limiting rod (1118), and the positioning slide rail (1119) is provided with a positioning hole. The limiting rod (1118) is inserted into the positioning hole of the positioning slide rail (1119) and is located below the positioning slider (1110).

3. The silicon carbide single crystal furnace according to claim 2, characterized in that: It also includes a rotating assembly located at the bottom center of the base plate (114). The rotating assembly includes a rotating rod (1121) connected to the connecting rod (113). The rotating assembly also includes a driving gear (1122) and a driven gear (1123). The driving gear (1122) and the gear are connected by a belt (1125). The driven gear (1123) is located below the connecting rod (113) and connected to the connecting rod (113). The driving gear (1122) is located on one side of the driven gear (1123), and a motor (1124) is connected to the driving gear (1122).

4. The silicon carbide single crystal furnace according to claim 1, characterized in that: It also includes a buffer protector (14) located at the top of the moving lead screw (1313), the buffer protector (14) including a spring.

5. The silicon carbide single crystal furnace according to claim 1, characterized in that: It also includes a power supply area (2), a vacuum area (3), a cooling area (4) and a gas area (5). The vacuum area (3) and the cooling area (4) are located at the top and bottom of the reaction area (1), respectively. The power supply area (2) is located on one side of the reaction area (1), and the gas area (5) is located on the other side of the power supply area (2). The reaction zone (1) is provided with a quartz tube (16) and an induction capacitor (17). The quartz tube (16) is located on both sides of the reaction zone (1). The induction coil (13) is hollow and is provided with a cooling pipe (134). The cooling pipe (134) is connected to the induction coil (13). The cooling pipe (134) is provided with an inlet (1341) and an outlet (1342). The bottom of the reaction zone (1) is provided with an induction capacitor (17). The reaction zone (1) is also provided with a vacuum tube for introducing inert gas.

6. The silicon carbide single crystal furnace according to claim 5, characterized in that: A water outlet pipe (19) is provided at the top of the reaction zone (1), and a water pump (41) is provided in the cooling zone (4). The water pump (41) is connected to several cooling water pipe passages, including a quartz cooling passage (411) for cooling the quartz tube (16), a capacitor cooling passage (412) for cooling the inductive capacitor (17), a coil cooling passage (413) for cooling the inductive coil (13), and a vacuum cooling passage (414) for cooling the vacuum tube. The cooled water is discharged through the outlet pipe (19).

7. The silicon carbide single crystal furnace according to claim 6, characterized in that: The vacuum zone (3) is equipped with a vacuum assembly (31) for evacuation.

8. The silicon carbide single crystal furnace according to claim 5, characterized in that: The power supply area (2) is equipped with an inductive power supply (21), which is connected to the inductive capacitor (17). The gas area (5) is equipped with an inert gas for introducing into the reaction area (1).

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