一种增强型氮化镓器件结构及其制备方法
By etching grooves of varying depths on the AlGaN barrier layer and setting a P-type gallium nitride gate cap layer, the structure of the enhancement-mode gallium nitride device is optimized, solving the problems of insufficient carrier mobility and high-temperature stability in the prior art. This results in an enhancement-mode gallium nitride device with high output current and high threshold voltage, suitable for high-frequency and high-power environments.
CN116013958BActive Publication Date: 2026-07-17XIDIAN UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIDIAN UNIV
- Filing Date
- 2022-12-28
- Publication Date
- 2026-07-17
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Figure CN116013958B_ABST
Abstract
本发明涉及一种增强型氮化镓器件结构及其制备方法，结构包括：衬底层；GaN缓冲层，位于衬底层之上；AlGaN势垒层，位于GaN缓冲层之上，AlGaN势垒层的凹槽结构包括相通的第一凹槽和第二凹槽；第一P型氮化镓栅帽层、第二P型氮化镓栅帽层设置在凹槽结构中；栅电极位于P型氮化镓栅帽层之上；源电极和漏电极位于AlGaN势垒层上表面的两端；钝化层位于AlGaN势垒层之上；栅场板位于钝化层之上。本发明的增强型氮化镓器件结构避免了削弱器件栅控能力的问题，兼顾了器件的优秀输出特性与较高的阈值电压，较好地保留了氮化镓器件高温稳定性好、载流子迁移率高的特点。
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