Micro light emitting diode package structure

Abstract

A micro light emitting diode package structure is provided. The micro light emitting diode package structure includes a redistribution layer, a control element, a plurality of micro light emitting diodes, and a flexible material layer. The control element and the micro light emitting diodes are disposed on and electrically connected to the redistribution layer. The flexible material layer covers the control element and the micro light emitting diodes, wherein the micro light emitting diodes contact the flexible material layer.

Description

Technical Field

[0001] This disclosure relates to a micro light-emitting diode (LED) package structure, and more particularly to a micro LED package structure that integrates a control element and a micro LED. Background Technology

[0002] Due to their low power consumption, light-emitting diode (LED) displays have become the mainstream in the display technology field. However, because the thickness and size of LED components cannot be further miniaturized, existing packaging technologies struggle to achieve the goals of small pitch and low cost. Summary of the Invention

[0003] This disclosure provides a miniature light-emitting diode (LED) package structure in several embodiments. The miniature LED package structure includes a redistribution line layer, a control element, a plurality of miniature LEDs, and a flexible material layer. The control element and the miniature LEDs are disposed on and electrically connected to the redistribution line layer. The flexible material layer covers the control element and the miniature LEDs, wherein the miniature LEDs contact the flexible material layer. Attached Figure Description

[0004] The viewpoints of embodiments of the invention will become more apparent from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with industry standard practice, the various features are not drawn to scale and are for illustrative purposes only. In fact, the dimensions of the elements may be arbitrarily enlarged or reduced to clearly demonstrate the features of embodiments of the invention.

[0005] Figures 1-14 This is a cross-sectional schematic diagram of a micro light-emitting diode package structure according to some embodiments of the present disclosure.

[0006] Figure 15 This is a bottom view of a micro-light-emitting diode package structure according to some embodiments of the present disclosure, showing the relationship between the area (AD) of the dispersed Bragg reflector layer and the total area (AT) of the micro-light-emitting diode package structure.

[0007] Figure 16 This is a cross-sectional schematic diagram of a micro-light-emitting diode (LED) package structure according to some embodiments of the present disclosure, showing the surface morphology of the back side of the LED.

[0008] Figures 17A-17K To form such Figure 1 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0009] Figures 18A-18E To form such Figure 1The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0010] Figures 19A-19J To form such Figure 2 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0011] Figures 20A-20I To form such Figure 3 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0012] Figures 21A-21I To form such Figure 4 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0013] Figures 22A-22I To form such Figure 5 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0014] Figures 23A-23H The image shows the formation of... Figure 6 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0015] Figures 24A-24H To form such Figure 7 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0016] Figures 25A-25D The image shows the formation of... Figure 8 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0017] Figures 26A-26G To form such Figure 9 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0018] Figures 27A-27D To form such Figure 10 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0019] Figures 28A-28F To form such Figure 11 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0020] Figures 29A-29E To form such Figure 12The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0021] Figures 30A-30C To form such Figure 13 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0022] Figures 31A-31C To form such Figure 14 The diagram shows cross-sectional views of micro LED packaging structures at different stages according to some embodiments of this disclosure.

[0023] The reference numerals in the attached figures are explained as follows:

[0024] 200, 300, 400: Carrier board

[0025] 201, 301, 401: Surface

[0026] 204, 304, 304R, 404: Adhesive layer

[0027] 205, 206, 208, 210, 305, 306, 308, 310, 405, 406, 408, 410: Miniature LEDs

[0028] 205b, 206b, 208b, 210b, 212b, 305b, 306b, 308b, 310b, 405b, 406b, 408b, 410b, 412b: Reverse side

[0029] 206p, 208p, 210p, 306p, 308p, 310p, 406p, 408p, 410p: Electrodes

[0030] 212, 312, 412: Control elements

[0031] 212p, 312p: Contact pads

[0032] 216, 222, 316: Insulation layer

[0033] 216a, 216b, 216c, 216d, 222a, 240a, 240b, 240c, 316a, 316b, 316c, 340a, 340b, 340c, 416a, 416b: Open

[0034] 220, 320, 420: Redistributed Line Layer

[0035] 220-1, 320-1, 420-1: First side

[0036] 220-2, 320-2, 420-2: Second side

[0037] 224, 324: solder pads

[0038] 226, 326: Thin film layer

[0039] 236, 246, 336, 436: Light-shielding layer

[0040] 240, 340, 440: Dispersed Bragg mirror layers

[0041] 250, 350, 450: Flexible material layers

[0042] 251: Interface

[0043] 252L, 352L, 452L: Cutting track

[0044] 260, 360, 460: Light-emitting surface

[0045] 500a, 500b, 500c, 500d, 500e, 500f, 500g, 500h, 500i, 500k, 500l, 500m, 500n, 500p: Miniature LED package structures

[0046] AD: Area

[0047] AT: Total Area Detailed Implementation

[0048] The present disclosure is described more fully below with reference to the accompanying drawings of embodiments of the invention. However, the present disclosure may be implemented in various different ways and should not be limited to the embodiments described herein. The thickness of layers and regions in the drawings may be enlarged for clarity, and the same or similar reference numerals in the drawings denote the same or similar elements.

[0049] This disclosure provides a micro-light-emitting diode (LED) package structure and a method for forming the same. The micro-LED package structure integrates control elements and multiple micro-LEDs into a single package structure to form a pixel package, which can be controlled individually / independently. Furthermore, it can further reduce the size of the package structure for application in small-pitch displays, such as wearable display devices or special totem-style micro-light sources.

[0050] The following will be based on Figures 1-14 This disclosure describes some embodiments of a micro light-emitting diode (LED) package structure 500, which includes micro LED package structures 500a-500i, 500k-500n, and 500p. Figure 1This is a cross-sectional schematic diagram of a micro-light-emitting diode (LED) package structure 500a according to some embodiments of the present disclosure. The micro-LED package structure 500a includes a redistribution layer (RDL) 220, a control element 212, micro-LEDs 205 (including micro-LEDs 206, 208, and 210), and a flexible material layer 250. For example... Figure 1 As shown, the redistribution layer 220 has a first side 220-1 and a second side 220-2 opposite to each other, disposed above the micro-light-emitting diodes 206, 208, 210 and the control element 212, and electrically connected to the micro-light-emitting diodes 206, 208, 210 and the control element 212. The redistribution layer 220 is used to fan out and wind the original electrical contact positions of the micro-light-emitting diodes 205 and the control element 212 to designated positions in the micro-light-emitting diode package structure. In some embodiments, the redistribution layer 220 comprises a stack of conductive material films such as chromium (Cr), aluminum (Al), nickel (Ni), gold (Au), platinum (Pt), tin (Sn), copper (Cu) or combinations thereof, and can be formed using a plating process such as vapor deposition or electroplating.

[0051] like Figure 1As shown, control elements 212, spaced apart from each other, and a plurality of miniature light-emitting diodes 205 are arranged side-by-side on the first side 220-1 of the redistribution conductive layer 220 and electrically connected to the redistribution line layer 220. The control element 212 has a contact pad 212p and a back surface 212b away from the contact pad 212p, and the miniature light-emitting diodes 206, 208, and 210 respectively have electrodes 206p, 208p, and 210p and back surfaces 206b, 208b, and 210b away from the corresponding electrodes 206p, 208p, and 210p. In some embodiments, the back surfaces 206b, 208b, and 210b of the miniature light-emitting diodes 206, 208, and 210 are also the light-emitting surfaces of the miniature light-emitting diodes 206, 208, and 210. A redistribution layer 220 is disposed on the electrodes 206p, 208p, and 210p of the micro-LEDs 206, 208, and 210, and on the contact pad 212p of the control element 212, and contacts the electrodes 206p, 208p, and 210p of the micro-LEDs 206, 208, and 210, and the contact pad 212p of the control element 212. In some embodiments, the back surface 212b of the control element 212 is flush with the back surfaces 206b, 208b, and 210b of the micro-LEDs 206, 208, and 210. In some embodiments, the control element 212 includes a micro-driver integrated circuit device, a micro-control integrated circuit device, or a combination thereof. In some embodiments, the micro-LED 205 includes a plurality of micro-LEDs 206, 208, and 210 emitting light of different wavelengths to form a pixel unit. For example, the micro-light-emitting diodes 205 emitting different colors of light may include a micro-light-emitting diode 206 emitting red light, a micro-light-emitting diode 208 emitting green light, and a micro-light-emitting diode 210 emitting blue light, but the embodiments disclosed herein are not limited thereto. In some embodiments, the micro-light-emitting diodes 205 include a plurality of micro-light-emitting diodes 206, 208, and 210 emitting light of the same wavelength, such as blue light or ultraviolet (UV) light, and are respectively coated with phosphors or quantum dot materials of different compositions to absorb the light emitted by the micro-light-emitting diodes 206, 208, and 210 and convert it into red, green, or blue light to form a pixel unit.

[0052] like Figure 1As shown, the flexible material layer 250 covers and contacts the back surface 212b of the control element 212 and the back surfaces 206b, 208b, and 210b of the micro-LEDs 206, 208, and 210. The interface 251 between the control element and the flexible material layer 250 is located away from the multiple electrodes of the micro-LEDs 206, 208, and 210. The light-emitting surface 260 of the micro-LED package structure 500a is located on the opposite surface of the flexible material layer 250 and the interface 251. In some embodiments, the flexible material layer 250 comprises a flexible material having good light transmittance (e.g., greater than 90%), such as polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polyethylene isophthalate (PEN), polystyrene (PS), polypropylene (PP), polyamide (PA), polycarbonate (PC), polyimide (PI), epoxy resin, silicone, polydimethylsiloxane (PDMS), or any combination thereof, and can be formed by means such as lamination, spraying, etc.

[0053] like Figure 1 As shown, the micro-LED package structure 500a further includes an insulating layer 216 disposed between the first side 220-1 of the redistribution line layer 220 and the flexible material layer 250. The insulating layer 216 contacts the redistribution line layer 220 and the flexible material layer 250. Furthermore, the insulating layer 216 surrounds the control element 212 and the micro-LEDs 206, 208, 210, and covers the electrodes 206p, 208p, 210p and the contact pad 212p to provide electrical insulation between the control element 212 and the micro-LEDs 206, 208, 210. Figure 1 As shown, the redistribution layer 220 passes through a portion of the insulating layer 216 located above the control element 212 and the micro-LEDs 206, 208, 210, electrically connecting the electrodes 206p, 208p, 210p of the micro-LEDs 206, 208, 210 and the contact pad 212p of the control element 212. Figure 1As shown, the back surface 212b of the control element 212 and the back surfaces 206b, 208b, and 210b of the micro-LEDs 206, 208, and 210 are exposed from the insulating layer 216. In some embodiments, the height of the insulating layer 216 between the redistribution line layer 220 and the flexible material layer 250 is greater than the height of the micro-LEDs 206, 208, 210 and the control element 212 to provide better electrical insulation. In some embodiments, the insulating layer 216 comprises an insulating material with a low dielectric constant and good and stepped coverage, such as polyimide (PI), epoxy resin, or benzocyclobutene (BCB), and can be formed using coating processes such as spin coating or spray coating.

[0054] like Figure 1 As shown, the miniature light-emitting diode package structure 500a also includes an insulating layer 222 and multiple solder pads 224 as interconnect structures. Figure 1 As shown, the insulating layer 222 is disposed on the second side 220-2 of the redistribution line layer 220 and covers the redistribution line layer 220, serving as an electrical insulating component between the redistribution line layers 220. Figure 1 As shown, solder pads 224 are disposed on insulating layer 222, pass through insulating layer 222 and are electrically connected to redistribution layer 220, and are used to electrically connect to external circuitry. In some embodiments, insulating layer 216 and insulating layer 222 may have the same or similar materials and processes. In some embodiments, solder pads 224 and redistribution layer 220 may have the same or similar materials and formation methods.

[0055] Figure 2 This is a cross-sectional schematic diagram of a miniature light-emitting diode package structure 500b according to some embodiments of the present disclosure, and the figure is consistent with... Figure 1 The same or similar component symbols represent the same or similar components. For example... Figure 2 As shown, the difference between the micro-LED package structure 500b and the micro-LED package structure 500a is that the micro-LED package structure 500b includes a light-shielding layer 236 disposed between the redistribution line layer 220 and the flexible material layer 250, which can improve the contrast of the micro-LED package structure 500b. Figure 2As shown, the light-shielding layer 236 contacts the insulating layer 216 and the flexible material layer 250, surrounds the micro-light-emitting diodes 206, 208, and 210, and is close to the back surfaces 206b, 208b, and 210b of the micro-light-emitting diodes 206, 208, and 210. When the micro-light-emitting diodes 206, 208, and 210 emit light from the back surfaces 206b, 208b, and 210b, the light-shielding layer 236 may include a black matrix. In some embodiments, the light-shielding layer 236 includes colloidal materials and inorganic materials. The colloidal materials include polymethyl methacrylate (PMMA), polycarbonate (PC), propylene glycol carbonate (CR-39), polystyrene (PS), epoxy resin, polyamide, acrylate, silicone, or combinations thereof, and the inorganic materials may include toner or perovskite, etc. In some embodiments, the light-shielding layer 236 comprises colloidal materials and organic materials, the organic materials including polyimide resin, polyvinyl alcohol resin, and / or acrylic resin with added black pigment or dye. In some embodiments, the light-shielding layer 236 is formed using methods such as spin coating or molding.

[0056] Figure 3 This is a cross-sectional schematic diagram of a miniature light-emitting diode package structure 500c according to some embodiments of the present disclosure, and in the figure, it is related to... Figure 1 , Figure 2 The same or similar component symbols represent the same or similar components. For example... Figure 3 As shown, the difference between the micro-LED package structure 500c and the micro-LED package structure 500a is that the micro-LED package structure 500c includes a light-shielding layer 246 disposed between the redistribution line layer 220 and the flexible material layer 250. For example... Figure 3 As shown, the light-shielding layer 246 can be used to replace the insulating layer 216 of the micro-LED package structure 500a, while simultaneously providing electrical insulation and improving the contrast of the micro-LED package structure 500c. In some embodiments, the light-shielding layer 236 and the light-shielding layer 246 may have the same or similar materials and formation methods.

[0057] Figure 4 This is a cross-sectional schematic diagram of a miniature light-emitting diode package structure 500d according to some embodiments of the present disclosure, and in the figure, it is related to... Figures 1-3 The same or similar component symbols represent the same or similar components. For example... Figure 4As shown, the difference between the micro-LED package structure 500d and the micro-LED package structure 500a is that the micro-LED package structure 500d includes a distributed Bragg reflector layer 240 that is close to the electrodes 206p, 208p, and 210p of the micro-LEDs 206, 208, and 210 and contacts the redistribution line layer 220, thereby increasing the luminous efficiency of the micro-LED package structure 500d. In some embodiments, the distributed Bragg reflector layer 240 surrounds the micro-LEDs 206, 208, and 210 and extends along the sidewalls of the micro-LEDs 206, 208, and 210, close to the electrodes 206p, 208p, and 210p. The distributed Bragg reflector layer 240 contacts the redistribution line layer 220 and the insulating layer 216, and the electrodes 206p, 208p, and 210p of the micro-LEDs 206, 208, and 210 are exposed from the Bragg reflector layer 240. The dispersed Bragg reflector layer 240 separates the sidewalls of the micro-LEDs 206, 208, and 210 from the insulating layer 216. In some embodiments, the dispersed Bragg reflector layer 240 comprises thin films of two or more homogeneous or heterogeneous materials with different refractive indices stacked together. For example, the dispersed Bragg reflector layer 240 may be composed of alternating stacks of silicon dioxide (SiO2) and titanium dioxide (TiO2), alternating stacks of silicon dioxide (SiO2) / alumina (Al2O3) / titanium dioxide (TiO2), or alternating stacks of titanium dioxide (TiO2) / silicon dioxide (SiO2) / tantalum pentoxide (Ta2O5). In some embodiments, the dispersed Bragg reflector layer 240 is formed using deposition processes such as vapor deposition, atomic layer deposition (ALD), and metal-organic chemical vapor deposition (MOCVD), followed by a patterning process.

[0058] Figure 5 This is a cross-sectional schematic diagram of a miniature light-emitting diode package structure 500e according to some embodiments of the present disclosure, and the figure is consistent with... Figures 1-4 The same or similar component symbols represent the same or similar components. For example... Figure 5 As shown, the difference between the micro-LED package structure 500e and the micro-LED package structure 500a is that the micro-LED package structure 500e includes a light-shielding layer 236 and a dispersed Bragg reflector layer 240 disposed between the redistribution line layer 220 and the flexible material layer 250, which can simultaneously improve the contrast and luminous efficiency of the micro-LED package structure 500e. Figure 5As shown, the light-shielding layer 236 surrounds the micro-light-emitting diodes 206, 208, and 210 and contacts the dispersed Bragg reflector layer 240 extending along the sidewalls of the micro-light-emitting diodes 206, 208, and 210. The dispersed Bragg reflector layer 240 separates the micro-light-emitting diodes 206, 208, and 210 from the insulating layer 216 and the light-shielding layer 236.

[0059] Figure 6 This is a cross-sectional schematic diagram of a miniature light-emitting diode package structure 500f according to some embodiments of the present disclosure, and in the figure, it is related to... Figures 1-5 The same or similar component symbols represent the same or similar components. For example... Figure 6 As shown, the difference between the micro-LED package structure 500f and the micro-LED package structure 500c is that the micro-LED package structure 500f includes a dispersed Bragg reflector layer 240 surrounding the micro-LEDs 206, 208, and 210 to further increase the luminous efficiency of the micro-LED package structure 500f. In some embodiments, the dispersed Bragg reflector layer 240 separates the micro-LEDs 206, 208, and 210 from the light-shielding layer 246.

[0060] Figure 7 This is a cross-sectional schematic diagram of a 500g miniature light-emitting diode package structure according to some embodiments of the present disclosure. Figures 1-6 The same or similar component symbols represent the same or similar components. For example... Figure 7 As shown, the micro LED package structure 500g includes a redistribution line layer 320, a control element 312, micro LEDs 305 (including micro LEDs 306, 308, and 310), and a flexible material layer 350. In some embodiments, the control element 312 may have the same or similar structure as the control element 212, the micro LEDs 305 (including micro LEDs 306, 308, and 310) may have the same or similar structure as the micro LEDs 205 (including micro LEDs 206, 208, and 210), the redistribution line layer 320 may have the same or similar material and formation as the redistribution line layer 220, and the flexible material layer 350 may have the same or similar material and formation as the flexible material layer 250.

[0061] like Figure 7As shown, the difference between the micro-LED package structure 500a and the micro-LED package structure 500g is that the redistribution line layer 320 of the micro-LED package structure 500g has a first side 320-1 and a second side 320-2 facing each other. The control element 312 is disposed on the first side 320-1 of the redistribution line layer 320, and the micro-LEDs 306, 308, and 310 are disposed on the second side 320-2 of the redistribution line layer 320. Specifically, the contact pad 312p of the control element 312 contacts the first side 320-1 of the redistribution line layer 320, and the electrodes 306p, 308p, and 310p of the micro-LEDs 306, 308, and 310 contact the second side 320-2 of the redistribution line layer 320. In the micro-LED package structure 500g, the micro-LEDs 306, 308, and 310 are closer to the light-emitting surface 360 ​​of the micro-LED package structure than the control element 312.

[0062] like Figure 7 As shown, an insulating layer 316 is disposed on a first side 320-1 of the redistribution layer 320 and contacts the control element 312. The insulating layer 316 is located between the redistribution layer 320 and the control element 312, and the redistribution layer 320 passes through a portion of the insulating layer 316 above the control element 312 to electrically connect to the contact pad 312p of the control element 312. The back surface 312b of the control element 312 is away from the contact pad 312p and exposed from the insulating layer 316. Additionally, the insulating layer 316 has an opening exposing the redistribution layer 320 for electrically connecting the redistribution layer 320 to an external circuit. In some embodiments, the insulating layers 216 and 316 have the same or similar materials and formation methods.

[0063] like Figure 7 As shown, a flexible material layer 350 of the 500g micro LED package structure is disposed on the second side 320-2 of the redistribution line layer 320. It covers and contacts the redistribution line layer 320, the sidewalls of the micro LEDs 306, 308, and 310, the electrodes 306p, 308p, and 310p, the back surfaces 306b, 308b, and 310b, and the insulating layer 316 not covered by the redistribution line layer 320.

[0064] like Figure 7 As shown, the micro LED package structure 500g also includes an adhesive layer 304R covering the back surface 312b of the control element 312. In some embodiments, the adhesive layer 304R includes an adhesive material with adhesive properties such as benzocyclobutene (BCB), polyimide (PI), epoxy resin, and silicone.

[0065] Figure 8 This is a cross-sectional schematic diagram of a miniature light-emitting diode package structure 500h according to some embodiments of this disclosure, and in the figure, it is related to... Figures 1-7 The same or similar component symbols represent the same or similar components. For example... Figure 8 As shown, the difference between the micro-LED package structure 500h and the micro-LED package structure 500g is that the micro-LED package structure 500h includes a light-shielding layer 336 disposed between the redistribution line layer 320 and the flexible material layer 350, which can improve the contrast of the micro-LED package structure 500h. Figure 8 As shown, a light-shielding layer 336 is disposed on the second side 320-2 of the redistribution circuit layer 320 and conformally covers the redistribution circuit layer 320. The light-shielding layer 336 contacts the insulating layer 316, the redistribution circuit layer 320, and the flexible material layer 350. The light-shielding layer 336 covers the control element 312 and surrounds the micro-light-emitting diodes 306, 308, and 310. Furthermore, the light-shielding layer 336 is close to the electrodes 306p, 308p, and 310p of the micro-light-emitting diodes 306, 308, and 310. In some embodiments, the light-shielding layer 236 and the light-shielding layer 336 may have the same or similar materials, and the light-shielding layer 336 may be formed using a coating process such as spin coating or spray coating.

[0066] Figure 9 This is a cross-sectional schematic diagram of a miniature light-emitting diode package structure 500i according to some embodiments of the present disclosure, and the figure is consistent with... Figures 1-8 The same or similar component symbols represent the same or similar components. For example... Figure 9 As shown, the difference between the micro-LED package structure 500g and the micro-LED package structure 500i is that the micro-LED package structure 500i includes a distributed Bragg reflector layer 340 that is close to the electrodes 306p, 308p, and 310p of the micro-LEDs 306, 308, and 310 and contacts the redistribution line layer 320, thereby increasing the luminous efficiency of the micro-LED package structure 500i. The distributed Bragg reflector layer 340 is located between the flexible material layer 350 and the insulating layer 316, conformally covers the insulating layer 316, and contacts the first side 320-1 of the redistribution line layer 320. In addition, the distributed Bragg reflector layer 340 partially covers the control element 312. In some embodiments, the distributed Bragg reflector layer 240 and the distributed Bragg reflector layer 340 may have the same or similar materials and formation methods.

[0067] like Figure 9As shown, the micro LED package structure 500i also includes a plurality of solder pads 324. The solder pads 324 are disposed between the insulating layer 316 and the distributed Bragg reflector layer 340, and are electrically connected to the redistribution line layer 320. The solder pads 324 may be exposed from openings in the insulating layer 316 for electrical connection to external circuitry. In some embodiments, solder pads 224 and 324 may have the same or similar materials and formation methods.

[0068] Figure 10 This is a cross-sectional schematic diagram of a 500k miniature light-emitting diode package structure according to some embodiments of this disclosure, and the figure is consistent with... Figures 1-9 The same or similar component symbols represent the same or similar components. For example... Figure 10 As shown, the difference between the micro-LED package structure 500k and the micro-LED package structure 500g is that the micro-LED package structure 500k includes a distributed Bragg reflector layer 340 disposed on the first side 320-1 of the redistribution line layer 320, and a light-shielding layer 336 disposed on the second side 320-2 of the redistribution line layer 320, which can improve the contrast and luminous efficiency of the micro-LED package structure 500g. Figure 10 As shown, the dispersed Bragg reflector layer 340 and the light-shielding layer 336 near the edge of the micro LED package structure 500k and near the electrodes 306p, 308p, and 310p of the micro LEDs 306, 308, and 310 are in contact with each other.

[0069] Figure 11 This is a cross-sectional schematic diagram of a miniature light-emitting diode package structure 500l according to some embodiments of the present disclosure, and the figure is consistent with... Figures 1-10 The same or similar component symbols represent the same or similar components. For example... Figure 11 As shown, the miniature light-emitting diode (LED) package structure 500l includes a redistribution line layer 420, a control element 412, miniature LEDs 405 (including miniature LEDs 406, 408, and 410), and a flexible material layer 450. In some embodiments, the miniature LEDs 405 (including miniature LEDs 406, 408, and 410) may have the same or similar structure as miniature LEDs 205 (including miniature LEDs 206, 208, and 210) and 305 (including miniature LEDs 306, 308, and 310), the redistribution line layer 420 may have the same or similar material and formation as redistribution line layers 220 and 320, and the flexible material layer 450 may have the same or similar material and formation as flexible material layers 250 and 350.

[0070] like Figure 11As shown, the difference between the micro-LED package structure 500a and the micro-LED package structure 500l is that the redistribution line layer 420 of the micro-LED package structure 500l has a first side 420-1 and a second side 420-2 facing each other. The control element 412 is disposed on the first side 420-1 of the redistribution line layer 420, and the micro-LEDs 406, 408, and 410 are disposed on the second side 420-2 of the redistribution line layer 420. Specifically, the control element 412 contacts and is electrically connected to the first side 420-1 of the redistribution line layer 420, and the electrodes 406p, 408p, and 410p of the micro-LEDs 406, 408, and 410 contact the second side 420-2 of the redistribution line layer 420. Furthermore, the micro-LEDs 406, 408, and 410 of the micro-LED package structure 500l are located directly above the control element 412 and partially overlap with it. Figure 11 As shown, the miniature light-emitting diodes 406, 408, and 410 are closer to the light-emitting surface 460 of the miniature light-emitting diode package structure than the control element 412. In some embodiments, the control element 412 includes a thin-film transistor device. In other embodiments, the control element 412 includes a miniature driver integrated circuit device, a miniature control integrated circuit device, or a combination thereof.

[0071] like Figure 11 As shown, an insulating layer 416 is disposed on a first side 420-1 of the redistribution line layer 420 and contacts the control element 412. The insulating layer 416 covers the back surface 412b of the control element 412, such that the control element 412 is located between the insulating layer 416 and the redistribution line layer 420. Furthermore, the control element 412 is located between the insulating layer 416 and the micro-light-emitting diodes 406, 408, and 410. Additionally, the insulating layer 416 has an opening exposing the redistribution line layer 420 for electrically connecting the redistribution line layer 420 to an external circuit. In some embodiments, the insulating layer 416 serves as a support layer for supporting, for example, the control element 412 of a thin-film transistor device.

[0072] like Figure 11 As shown, the flexible material layer 450 of the micro LED package structure 500l is disposed on the second side 420-2 of the redistribution line layer 420, covering and contacting the redistribution line layer 420, the sidewalls and back surfaces 406b, 408b, and 410b of the micro LEDs 406, 408, and 410, and the control element 412 not covered by the redistribution line layer 420. The flexible material layer 450 is separated from the insulating layer 416 by the control element 412 and the redistribution line layer 420.

[0073] Figure 12This is a cross-sectional schematic diagram of a 500μm miniature light-emitting diode package structure according to some embodiments of this disclosure. Figures 1-11 The same or similar component symbols represent the same or similar components. For example... Figure 12 As shown, the difference between the micro-LED package structure 500m and the micro-LED package structure 500l is that the micro-LED package structure 500m also includes a distributed Bragg reflector layer 440 that is close to the electrodes 406p, 408p, and 410p of the micro-LEDs 406, 408, and 410 and contacts the redistribution line layer 420, in order to increase the luminous efficiency of the micro-LED package structure 500m. The distributed Bragg reflector layer 440 is located between the flexible material layer 450 and the insulating layer 416, conformally covers the control element 412 and the insulating layer 416, and contacts the first side 420-1 of the redistribution line layer 420. In addition, the distributed Bragg reflector layer 440 partially covers the control element 412.

[0074] Figure 13 This is a cross-sectional schematic diagram of a miniature light-emitting diode package structure 500n according to some embodiments of the present disclosure, and the figure is consistent with... Figures 1-12 The same or similar component symbols represent the same or similar components. For example... Figure 13 As shown, the difference between the micro-LED package structure 500n and the micro-LED package structure 500l is that the micro-LED package structure 500n also includes a light-shielding layer 436 disposed between the redistribution line layer 420 and the flexible material layer 450, which can improve the contrast of the micro-LED package structure 500n. Figure 13 As shown, a light-shielding layer 436 is disposed on the second side 420-2 of the redistribution line layer 420 and conformally covers the redistribution line layer 420. The light-shielding layer 436 contacts the insulating layer 416, the redistribution line layer 420, and the flexible material layer 450. The light-shielding layer 436 surrounds the micro-light-emitting diodes 406, 408, and 410 and covers the control element 412. Furthermore, the light-shielding layer 436 is close to the electrodes 406p, 408p, and 410p of the micro-light-emitting diodes 406, 408, and 410.

[0075] Figure 14 This is a cross-sectional schematic diagram of a 500p miniature light-emitting diode package structure according to some embodiments of the present disclosure. Figures 1-13 The same or similar component symbols represent the same or similar components. For example... Figure 14As shown, the difference between the micro-LED package structure 500p and the micro-LED package structure 500l is that the micro-LED package structure 500p also includes a distributed Bragg reflector layer 440 disposed on the first side 420-1 of the redistribution line layer 420, and a light-shielding layer 436 disposed on the second side 420-1 of the redistribution line layer 420, which can simultaneously improve the contrast and luminous efficiency of the micro-LED package structure 500p. Figure 14 As shown, the dispersed Bragg reflector layer 440 and the light-shielding layer 436 near the edge of the micro LED package structure 500p and near the electrodes 406p, 408p, and 410p of the micro LEDs 406, 408, and 410 are in contact with each other.

[0076] Figure 15 This is a bottom view of a micro-light-emitting diode package structure 500 according to some embodiments of the present disclosure, showing the relationship between the area (AD) of the dispersed Bragg reflector layer and the total area (AT) of the upper surface of the micro-light-emitting diode package structure. Figure 15 The diagram also shows the configuration relationship between the redistribution lines (including redistribution lines 220, 320, and 420), the micro-LEDs (including micro-LEDs 205, 305, and 405), the control elements (including control elements 212, 312, and 412), and the distributed Bragg reflector layers (including distributed Bragg reflector layers 240, 340, and 440). The redistribution lines at the four corners of the micro-LED package structure 500 serve as electrical connections between the anodes of the individual micro-LEDs and the common cathode, and the external circuitry; these can be considered as bonding pads of the micro-LED package structure 500. Furthermore, the narrower portion of the redistribution line between the bonding pad at the upper left corner of the micro-LED package structure 500 and the individual micro-LEDs and control elements can be considered as one of the conductive lines in the micro-LED package structure 500, which can simultaneously connect the contact pads of the control elements and the cathodes of the individual micro-LEDs to the bonding pad at the upper left corner. Furthermore, the narrow redistribution line layer portions between the three bonding pads located at the upper right, lower right, and lower left corners of the micro-LED package structure 500 and the control element can be considered as other different wires in the micro-LED package structure 500. These different wires can connect the contact pads of the control element and the anodes of each micro-LED to the three bonding pads at the upper right, lower right, and lower left corners, respectively. For example... Figure 15As shown, in a top view relative to the bottom surface of the light-emitting surface (e.g., light-emitting surfaces 260, 360, 460) of the micro-LED package structure 500, the area AD of the distributed Bragg reflector layers 240, 340, 440 is between 10% and 95% of the total area AT of the micro-LED package structure 500. If the area AD of the distributed Bragg reflector layer is less than 10% of the total area AT of the micro-LED package structure 500, the distributed Bragg reflector layer cannot completely reflect the light scattered by the micro-LED towards the bottom surface back to the light-emitting surface, resulting in poor reflection effect of the micro-LED package structure 500. If the area AD of the distributed Bragg reflector layer is greater than 95% of the total area AT of the micro-LED package structure 500, it is difficult to retain space at the edge of the micro-LED package structure 500 for the cut-out path and the electrical connection between the redistribution circuit layer and the external circuit.

[0077] Figure 16 This is an enlarged cross-sectional view of the micro-light-emitting diodes (including micro-light-emitting diodes 205, 305, and 405) in a micro-light-emitting diode package structure 500 according to some embodiments of this disclosure. It shows an example structure of micro-light-emitting diodes 205, 305, and 405 and the surface morphology of their back surfaces 205b, 305b, and 405b. Figure 16 As shown. In the fabrication process of micro-light-emitting diodes (LEDs), laser lift-off (LLO) can be used to separate the growth substrate (e.g., sapphire substrate) from the semiconductor epitaxial stacked structure (including P-type semiconductor layer, N-type semiconductor layer, and light-emitting layer) formed on it to fabricate micro-LEDs with dimensions on the micrometer (μm) scale. Therefore, in the micro-LED package structure 500, the back surfaces 205b, 305b, 405b (which can also be considered as light-emitting surfaces) of at least one micro-LED 205, 305, 405 are roughened, which can reduce the flexibility of the material layer ( Figures 1-14 This reduces the loss caused by total internal reflection between the LEDs and their back surfaces 205b, 305b, and 405b, thereby improving the light extraction efficiency of the LEDs.

[0078] The following describes the method for forming the miniature light-emitting diode package structure 500. For ease of explanation, Figures 17A-17K to Figures 31A-31C The illustration depicts a method for forming a miniature light-emitting diode (LED) package structure (one pixel unit), but this disclosure is not limited to this embodiment. In some other embodiments, the method for forming the LED package structure 500 can form multiple periodically arranged miniature LED package structures.

[0079] Figures 17A-17KTo form such Figure 1 The diagram shows cross-sectional views of a miniature light-emitting diode package structure 500a at different stages, representing some embodiments of this disclosure. Figure 17A As shown, firstly, a carrier plate 200 is provided. The carrier plate 200 is used to support micro-light-emitting diodes and control elements subsequently transferred onto the surface 201 of the carrier plate 200. In some embodiments, the carrier plate 200 is made of glass, sapphire, a transparent polymer, or a combination thereof. Next, an adhesive layer 204 is applied to the surface 201 of the carrier plate 200. The adhesive layer 204 is used to adhere the micro-light-emitting diodes and control elements subsequently transferred onto the carrier plate 200 to the surface 201 of the carrier plate 200. In some embodiments, the adhesive layer 204 comprises a polymeric material such as polyimide (PI), epoxy resin, or silicone, which has adhesive properties and whose interface with the carrier plate 200 is easily dissociated and destroyed in subsequent removal processes (e.g., laser lift-off (LLO)).

[0080] Next, as Figure 17B As shown, a control element 212 is disposed on the surface 201 of a carrier plate 200, and a plurality of micro-light-emitting diodes 205 (including micro-light-emitting diodes 206, 208, and 210) are transferred to the surface 201 of the carrier plate 200. The control element 212 and the micro-light-emitting diodes 205 are arranged side-by-side. The back surface 212b of the control element 212 and the back surfaces 206b, 208b, and 210b of the micro-light-emitting diodes 206, 208, and 210 are connected to an adhesive layer 204, while the contact pad 212p of the control element 212 and the electrodes 206p, 208p, and 210p of the micro-light-emitting diodes 206, 208, and 210 are located away from the carrier plate 200 and the adhesive layer 204. In some embodiments, the control element 212 and the micro-light-emitting diodes 205 can be transferred to the carrier plate 200 by mass transfer methods such as stamp transfer or laser transfer.

[0081] Next, as shown in 17C, a coating process and subsequent patterning process are performed to form an insulating layer 216 on the carrier substrate 200. In some embodiments, the insulating layer 216 surrounds and partially covers the control element 212 and the micro-light-emitting diodes 206, 208, and 210. Furthermore, the insulating layer 216 has a plurality of openings 216a, 216b, 216c, and 216d to expose the contact pad 212p of the control element 212 and the electrodes 206p, 208p, and 210p of the micro-light-emitting diodes 206, 208, and 210, respectively.

[0082] Next, as Figure 17DAs shown, after the control element 212 and the micro LEDs 206, 208, and 210 are transferred onto the carrier substrate 200, a plating process and subsequent patterning process are performed to form a redistribution circuit layer 220 on the control element 212 and the micro LEDs 206, 208, and 210. The redistribution circuit layer 220 passes through openings 216a, 216b, 216c, and 216d in the insulating layer 216. Figure 17C ), and electrically connected to the contact pad 212p of the control element 212 and the electrodes 206p, 208p, and 210p of the micro LEDs 206, 208, and 210, respectively. For example Figure 17D As shown, control element 212 and micro light-emitting diodes 206, 208, and 210 are disposed on the first side 220-1 of redistribution line layer 220.

[0083] Next, as Figure 17E As shown, after the redistribution layer 220 is formed, a coating process and a subsequent patterning process are performed to form an insulating layer 222 covering the redistribution layer 220. The insulating layer 222 has an opening 222a that exposes a portion of the redistribution layer 220 to define the location for subsequent solder pad formation.

[0084] Next, as Figure 17F As shown, a plating process and subsequent patterning process are performed to form multiple solder pads 224 on the insulating layer 222. The solder pads 224 pass through the opening 222a of the insulating layer 222. Figure 17E It is electrically connected to the redistribution line layer 220.

[0085] Next, as Figure 17G As shown, a laminating machine can be used to apply the film layer 226 to the second side 220-2 of the redistribution circuit layer 220. In some embodiments, the film layer 226 contacts the solder pads 224 but not the carrier board 200. In some embodiments, the film layer 226 comprises a structure consisting of an adhesive layer coated on a substrate, such as UV tape, the substrate material of which includes epoxy resin, polyethylene terephthalate (PET), polyvinyl chloride (PVC), polyimide (PI), or a combination thereof.

[0086] Next, as Figure 17H As shown, a removal process is performed to remove the carrier plate 200 from the adhesive layer 204. In some embodiments, the removal process includes laser debonding or other suitable removal processes.

[0087] Next, as Figure 17IAs shown, another removal process is performed to remove the adhesive layer 204, exposing the back surface 212b of the control element 212 and the back surface 206b, 208b, 210b of the micro-LEDs 206, 208, 210 from the insulating layer 216, thereby improving the light extraction efficiency of the micro-LED package structure. In some embodiments, the removal process includes chemical etching, plasma etching, or other suitable removal processes.

[0088] Next, as Figure 17J As shown, after removing the carrier plate 200 and the adhesive layer 204, a lamination or coating process is performed to form a flexible material layer 250, which covers the control element 212 and the micro LEDs 206, 208, and 210. In some embodiments, the flexible material layer 250 contacts the back surface 212b of the control element 212 and the back surfaces 206b, 208b, and 210b of the micro LEDs 206, 208, and 210.

[0089] Next, as Figure 17K As shown, a dicing process is performed to cut the flexible material layer 250 and the redistribution circuit layer 220 from the dicing channel 252L to form multiple discrete micro-LED package structures. In some embodiments, the dicing process includes laser cutting, diamond wheel sawing, or other suitable dicing processes. Finally, the thin film layer 226 is removed to form a package structure as shown. Figure 1 The miniature light-emitting diode package structure 500a is shown.

[0090] In some embodiments, the control element 212 and the micro light-emitting diodes 206, 208, 210 may be directly disposed on the flexible material layer to form a micro light-emitting diode package structure 500a. Figures 18A-18E To form such Figure 1 The figures shown are cross-sectional schematic diagrams of the micro light-emitting diode package structure 500a of some embodiments of this disclosure at different stages, and are consistent with... Figures 1-16 , Figures 17A-17K The same or similar element symbols represent the same or similar elements.

[0091] like Figure 18A As shown, firstly, a flexible material layer 250 is provided. Next, as... Figure 18BAs shown, a control element 212 is disposed on a flexible material layer 250, and a plurality of micro-LEDs 205 (including micro-LEDs 206, 208, and 210) are mass-transferred onto the flexible material layer 250, such that the back surface 212b of the control element 212 and the plurality of back surfaces 206b, 208b, and 210b of the micro-LEDs 206, 208, and 210 contact the flexible material layer 250. The interface 251 between the control element 212 and the micro-LEDs 206, 208, and 210 and the flexible material layer 250 is away from the contact pad 212p of the control element 212 and the electrodes 206p, 208p, and 210p of the micro-LEDs 206, 208, and 210.

[0092] Next, as Figure 18C As shown, a coating process and subsequent patterning process are performed to form an insulating layer 216 on the flexible material layer 250. The insulating layer 216 surrounds the control element 212 and the micro LEDs 206, 208, and 210. Multiple openings 216a, 216b, 216c, and 216d in the insulating layer 216 expose the contact pad 212p of the control element 212 and the electrodes 206p, 208p, and 210p of the micro LEDs 206, 208, and 210, respectively.

[0093] Next, as Figure 18D As shown, a plating process and subsequent patterning process are performed to form a redistribution circuit layer 220 on the control element 212 and the micro light-emitting diodes 206, 208, and 210. The redistribution circuit layer 220 passes through openings 216a, 216b, 216c, and 216d in the insulating layer 216. Figure 18C ), and are electrically connected to the contact pad 212p of the control element 212 and the electrodes 206p, 208p, and 210p of the micro LEDs 206, 208, and 210, respectively.

[0094] like Figure 18E As shown, after the redistribution layer 220 is formed, a coating process and a subsequent patterning process are performed to form an insulating layer 222 covering the redistribution layer 220. The insulating layer 222 has an opening 222a that exposes a portion of the redistribution layer 220 to define the location for subsequent solder pad formation.

[0095] Next, as Figure 1 As shown, a plating process and subsequent patterning process are performed to form multiple solder pads 224, which pass through the insulating layer 222 and are electrically connected to the redistribution circuit layer 220. After the above process, a structure is formed as shown... Figure 1 The miniature light-emitting diode package structure 500a is shown.

[0096] Figures 19A-19J To form such Figure 2The figures shown are cross-sectional schematic diagrams of the micro light-emitting diode package structure 500b of some embodiments of the present disclosure at different stages, and are consistent with... Figures 1-16 , Figures 17A-17K , Figures 18A-18E The same or similar element symbols represent the same or similar elements.

[0097] like Figure 19A As shown, proceed as follows Figure 17A , Figure 17B The process shown (or the process performed) Figure 18A Following the process shown, a light-shielding layer 236 is formed on the carrier plate 200 by means of spin coating or molding. The light-shielding layer 236 surrounds the control element 212 and the micro light-emitting diodes 206, 208, and 210.

[0098] Next, as Figure 19B As shown, perform a similar Figure 17C The process shown forms an insulating layer 216 on the light-shielding layer 236. In some embodiments, the insulating layer 216 surrounds the control element 212 and the micro LEDs 206, 208, 210 and covers the light-shielding layer 236.

[0099] Next, as Figures 19C-19G As shown, proceed in sequence. Figures 17D-17H The process shown involves forming a redistribution layer 220 on the control element 212 and the micro LEDs 206, 208, and 210, followed by forming an insulating layer 222 to cover the redistribution layer 220, then forming a plurality of solder pads 224 on the insulating layer 222 to electrically connect to the redistribution layer 220, then attaching a thin film layer 226 to the second side 220-2 of the redistribution layer 220, and finally removing the carrier board 200 from the adhesive layer 204.

[0100] Next, as Figure 19H As shown, perform a similar Figure 17I The process shown removes the adhesive layer 204, exposing the back surface 212b of the control element 212 and the back surface 206b, 208b, 210b of the micro LEDs 206, 208, 210 from the light-shielding layer 236.

[0101] Next, as Figure 19I As shown, perform a similar Figure 17J The process shown forms a flexible material layer 250 that covers the light-shielding layer 236, the back surface 212b of the control element 212, and the back surfaces 206b, 208b, and 210b of the micro light-emitting diodes 206, 208, and 210.

[0102] Next, as Figure 19J As shown, perform a similar Figure 17KThe process shown involves dicing a light-shielding layer 236, a flexible material layer 250, and a redistribution line layer 220 from dicing channel 252L to form multiple discrete micro-LED package structures. Finally, the thin film layer 226 is removed to form a package structure as shown. Figure 2 The micro-LED package structure 500b is shown. A light-shielding layer 236 is formed in the micro-LED package structure 500b before the formation of the insulating layer 216 and the redistribution line layer 220. The light-shielding layer 236 is formed between the redistribution line layer 220 and the flexible material layer 250, and surrounds the control element 212 and the micro-LEDs 206, 208, and 210.

[0103] Figures 20A-20I To form such Figure 3 The figures shown are cross-sectional schematic diagrams of the micro light-emitting diode package structure 500c at different stages according to some embodiments of this disclosure, and are consistent with... Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J The same or similar element symbols represent the same or similar elements.

[0104] like Figure 20A As shown, proceed as follows Figure 17A , Figure 17B The process shown (or the process performed) Figure 18A After the process shown, a similar process is performed. Figure 19A The process shown, along with subsequent patterning processes, forms a light-shielding layer 246 on the carrier substrate 200. The light-shielding layer 246 surrounds and partially covers the control element 212 and the micro-light-emitting diodes 206, 208, and 210. Furthermore, the light-shielding layer 246 has multiple openings to expose the contact pad 212p of the control element 212 and the electrodes 206p, 208p, and 210p of the micro-light-emitting diodes 206, 208, and 210, respectively.

[0105] Next, as Figure 20B As shown, perform a similar Figure 17D The process shown forms a redistribution circuit layer 220 on the light-shielding layer 246, the control element 212, and the micro light-emitting diodes 206, 208, and 210.

[0106] Next, as Figures 20C-20F As shown, proceed in sequence. Figures 17E-17H The process shown involves forming an insulating layer 222 covering the redistribution circuit layer 220, then forming a plurality of solder pads 224 on the insulating layer 222, then attaching a thin film layer 226 to the second side 220-2 of the redistribution circuit layer 220, and then removing the carrier board 200 from the adhesive layer 204.

[0107] Next, as Figure 20G As shown, perform a similar Figure 17IThe process shown removes the adhesive layer 204, exposing the back surface 212b of the control element 212 and the back surface 206b, 208b, 210b of the micro LEDs 206, 208, 210 from the light-shielding layer 246.

[0108] Next, as Figure 20H As shown, perform a similar Figure 17J The process shown forms a flexible material layer 250 that covers the light-shielding layer 246, the back surface 212b of the control element 212, and the back surfaces 206b, 208b, and 210b of the micro light-emitting diodes 206, 208, and 210.

[0109] Next, as Figure 20I As shown, perform a similar Figure 17K The process shown involves dicing the flexible material layer 250 and the redistribution line layer 220 from the dicing channel 252L to form multiple discrete micro-LED package structures. Finally, the thin film layer 226 is removed to form a... Figure 3 The micro-LED package structure 500c is shown. The micro-LED package structure 500c forms a light-shielding layer 246 before forming the redistribution line layer 220. The light-shielding layer 246 is formed between the redistribution line layer 220 and the flexible material layer 250, and surrounds the control element 212 and the micro-LEDs 206, 208, and 210.

[0110] Figures 21A-21I To form such Figure 4 The diagram shown is a cross-sectional view of a miniature light-emitting diode package structure 500d at different stages according to some embodiments of this disclosure. Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I The same or similar element symbols represent the same or similar elements.

[0111] like Figure 21A As shown, proceed as follows Figure 17A , Figure 17B The process shown (or the process performed) Figure 18A Following the process shown, a deposition process and subsequent patterning process are performed to form a dispersed Bragg reflector layer 240 on the micro-light-emitting diodes 206, 208, and 210. The dispersed Bragg reflector layer 240 extends from the sidewalls of the micro-light-emitting diodes 206, 208, and 210 close to the electrodes 206p, 208p, and 210p. Furthermore, the dispersed Bragg reflector layer 240 has multiple openings 240a, 240b, and 240c to expose the contact pad 212p of the control element 212 and the electrodes 206p, 208p, and 210p of the micro-light-emitting diodes 206, 208, and 210, respectively.

[0112] Next, as Figure 21B As shown, proceed in sequence. Figure 17C , Figure 17D The process shown involves forming an insulating layer 216 on the carrier 200 and the dispersed Bragg reflector layer 240, surrounding the dispersed Bragg reflector layer 240, the control element 212, and the micro-light-emitting diodes 206, 208, and 210. Furthermore, a redistribution layer 220 is formed on the insulating layer 216, the dispersed Bragg reflector layer 240, the control element 212, and the micro-light-emitting diodes 206, 208, and 210, and the redistribution layer 220 contacts the dispersed Bragg reflector 240.

[0113] Next, as Figures 21C-21G As shown, proceed in sequence. Figures 17E-17I The process shown involves forming an insulating layer 222 and solder pads 224 on the redistribution layer 220, then attaching a thin film layer 226 to the second side 220-2 of the redistribution layer 220, then removing the carrier board 200 from the adhesive layer 204, and then removing the adhesive layer 204 to expose the back surface 212b of the control element 212 and the back surfaces 206b, 208b, and 210b of the micro LEDs 206, 208, and 210 from the insulating layer 216 and the dispersed Bragg reflector 240.

[0114] Next, as Figure 21H As shown, perform a similar Figure 17J The process shown forms a flexible material layer 250 that covers the back surface 212b of the dispersed Bragg reflector 240, the control element 212, and the back surface 206b, 208b, and 210b of the micro light-emitting diodes 206, 208, and 210.

[0115] Next, as Figure 21I As shown, perform a similar Figure 17K The process shown involves dicing the flexible material layer 250 and the redistribution line layer 220 from the dicing channel 252L to form multiple discrete micro-LED package structures. Finally, the thin film layer 226 is removed to form a... Figure 4 The micro LED package structure 500d is shown. A distributed Bragg reflector 240 is formed in the micro LED package structure 500d prior to the formation of the redistribution line layer 220. The distributed Bragg reflector 240 is formed between the redistribution line layer 220 and the flexible material layer 250, and surrounds the control element 212 and the micro LEDs 206, 208, and 210.

[0116] Figures 22A-22I To form such Figure 5 The figures shown are cross-sectional schematic diagrams of the micro light-emitting diode package structure 500e of some embodiments of this disclosure at different stages, and are consistent with... Figures 1-16 , Figures 17A-17K, Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I The same or similar element symbols represent the same or similar elements.

[0117] like Figure 22A As shown, proceed in sequence as follows: Figure 17A , Figure 17B The process shown (or the process performed) Figure 18A After the process shown, proceed as follows: Figure 21A The process shown involves forming a dispersed Bragg reflector layer 240 on the micro-light-emitting diodes 206, 208, and 210. Next, the following steps are performed... Figure 19A The process shown forms a light-shielding layer 236 on a carrier plate 200, surrounding the Bragg reflector layer 240, control element 212, and micro light-emitting diodes 206, 208, and 210.

[0118] Next, as Figures 22B-22G As shown, proceed in sequence. Figures 17C-17I The process shown involves forming an insulating layer 216 on the light-shielding layer 236 and the dispersed Bragg reflector 240, followed by forming a redistribution layer 220 on the insulating layer 216, then sequentially forming an insulating layer 222 and a solder pad 224 on the redistribution layer 220, then attaching a thin film layer 226 to the second side 220-2 of the redistribution layer 220, then removing the carrier board 200 from the adhesive layer 204, and then removing the adhesive layer 204 to expose the back surface 212b of the control element 212 and the back surfaces 206b, 208b, and 210b of the micro LEDs 206, 208, and 210 from the light-shielding layer 236 and the dispersed Bragg reflector 240.

[0119] Next, as Figure 22H As shown, perform a similar Figure 17J The process shown forms a flexible material layer 250 that covers a light-shielding layer 236, a dispersed Bragg reflector 240, the back surface 212b of a control element 212, and the back surfaces 206b, 208b, and 210b of micro-light-emitting diodes 206, 208, and 210.

[0120] Next, as Figure 22I As shown, perform a similar Figure 17K The process shown involves dicing a light-shielding layer 236, a flexible material layer 250, and a redistribution line layer 220 from dicing channel 252L to form multiple discrete micro-LED package structures. Finally, the thin film layer 226 is removed to form a package structure as shown. Figure 5The micro LED package structure 500e is shown. The micro LED package structure 500e forms a light-shielding layer 236 and a dispersed Bragg reflector 240 before forming the redistribution line layer 220. The light-shielding layer 236 and the dispersed Bragg reflector 240 are formed between the redistribution line layer 220 and the flexible material layer 250, and surround the control element 212 and the micro LEDs 206, 208, and 210.

[0121] Figures 23A-23H The image shows the formation of... Figure 6 The figures shown are cross-sectional schematic diagrams of the micro light-emitting diode package structure 500f at different stages according to some embodiments of this disclosure, and are consistent with... Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I , Figures 22A-22I The same or similar element symbols represent the same or similar elements.

[0122] like Figure 23A As shown, proceed in sequence as follows: Figure 17A , Figure 17B The process shown (or the process performed) Figure 18A (As shown in the diagram), then proceed as follows: Figure 21A After the process shown, proceed as follows Figure 20A The process shown forms a light-shielding layer 246 on a carrier plate 200. The light-shielding layer 246 surrounds the dispersed Bragg reflector 240, the control element 212, and the micro-light-emitting diodes 206, 208, and 210. Then, a similar process is performed... Figure 17D The process shown forms a redistribution circuit layer 220 on a light-shielding layer 246, a distributed Bragg reflector 240, a control element 212, and micro light-emitting diodes 206, 208, and 210.

[0123] Next, as Figures 23B-23F As shown, proceed in sequence. Figures 17E-17I The process shown involves sequentially forming an insulating layer 222 and a solder pad 224 on the redistribution layer 220, then attaching a thin film layer 226 to the second side 220-2 of the redistribution layer 220, then removing the carrier board 200 from the adhesive layer 204, and then removing the adhesive layer 204 to expose the back surface 212b of the control element 212 and the back surfaces 206b, 208b, and 210b of the micro LEDs 206, 208, and 210 from the light-shielding layer 246 and the dispersed Bragg reflector 240.

[0124] Next, as Figure 23G As shown, perform a similar Figure 17JThe process shown forms a flexible material layer 250 that covers a light-shielding layer 246, a dispersed Bragg reflector 240, the back surface 212b of a control element 212, and the back surfaces 206b, 208b, and 210b of micro-light-emitting diodes 206, 208, and 210.

[0125] Next, as Figure 23H As shown, perform a similar Figure 17K The process shown involves dicing a light-shielding layer 246, a flexible material layer 250, and a redistribution line layer 220 from dicing channel 252L to form multiple discrete micro-LED package structures. Finally, the thin film layer 226 is removed to form a package structure as shown. Figure 6 The micro-LED package structure 500f is shown. The micro-LED package structure 500f forms a light-shielding layer 246 and a dispersed Bragg reflector 240 before forming the redistribution line layer 220. The light-shielding layer 246 and the dispersed Bragg reflector 240 are formed between the redistribution line layer 220 and the flexible material layer 250, and surround the control element 212 and the micro-LEDs 206, 208, and 210.

[0126] Figures 24A-24H To form such Figure 7 The diagram shown is a cross-sectional view of a miniature light-emitting diode package structure 500g at different stages according to some embodiments of this disclosure. Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I , Figures 22A-22I , Figures 23A-23H The same or similar element symbols represent the same or similar elements.

[0127] like Figure 24A As shown, firstly, a carrier plate 300 is provided. In some embodiments, carrier plates 200 and 300 comprise the same or similar material. Next, an adhesive layer 304 is applied to the surface 301 of the carrier plate 300. In some embodiments, adhesive layers 204 and 304 comprise the same or similar material.

[0128] Next, as Figure 24B As shown, the control element 312 can be disposed on the surface 301 of the carrier plate 300 by mass transfer methods such as stamp transfer or laser transfer. Afterwards, a removal process is performed to remove the adhesive layer 304 not covered by the control element 312. The remaining adhesive layer between the back surface 312b of the control element 312 and the carrier plate 300 is designated as adhesive layer 304R. In some embodiments, the removal process includes chemical etching, plasma etching, or other suitable removal processes.

[0129] Next, as Figure 24C As shown, after the control element 312 is placed on the carrier plate 300, a coating process and subsequent patterning process are performed to form an insulating layer 316 covering the carrier plate 300 and the control element 312. The insulating layer 316 conformally covers and surrounds the control element 312. Furthermore, the insulating layer 316 has an opening 316a to expose the contact pad 312p of the control element 312.

[0130] Next, as Figure 24D As shown, after the control element 312 is placed on the carrier board 300, a plating process and subsequent patterning process are performed to form a redistribution circuit layer 320 on the control element 312. The redistribution circuit layer 320 partially covers the insulating layer 316 and passes through the opening 316a of the insulating layer 316. Figure 24C It is electrically connected to the contact pad 312p of the control element 312. For example... Figure 24D As shown, the control element 312 is disposed on the first side 320-1 of the redistribution line layer 320.

[0131] Next, as Figure 24E As shown, after forming the redistribution line layer 320, a plurality of miniature light-emitting diodes (LEDs) 305 (including LEDs 306, 308, and 310) are transferred onto the surface 301 of the carrier substrate 300. A control element 312 is arranged side-by-side with the LEDs 305. Furthermore, the LEDs 305 are disposed on the second side 320-2 of the redistribution line layer 320. Figure 24E As shown, the electrodes 306p, 308p, and 310p of the micro LEDs 306, 308, and 310 are electrically connected to the redistribution line layer 320. Furthermore, the contact pad 312p of the control element 312 and the back surfaces 306b, 308b, and 310b of the micro LEDs 306, 308, and 310 are located away from the carrier plate 300. In some embodiments, the micro LEDs 205 and 305 have the same or similar configuration and transfer method.

[0132] Next, as Figure 24F As shown, a lamination or coating process is performed to form a flexible material layer 350, which covers the control element 312 and the micro-light-emitting diodes 306, 308, and 310. In some embodiments, the flexible material layer 350 contacts the back surfaces 306b, 308b, and 310b of the micro-light-emitting diodes 306, 308, and 310, and is separated from the control element 312 by an insulating layer 316 and a redistribution circuit layer 320.

[0133] Next, as Figure 24GAs shown, an attachment process can be performed using a laminator to attach the film layer 326 to the second side 320-2 of the redistribution circuit layer 320. In some embodiments, the film layer 326 contacts the flexible material layer 350 but not the carrier board 300. In some embodiments, the film layers 226 and 326 have the same or similar materials. Next, a removal process is performed to remove the carrier board 300 from the adhesive layer 304R. In some embodiments, the removal process includes laser debonding or other suitable removal processes.

[0134] Next, as Figure 24H As shown, an insulating layer 316 is patterned to form openings 316b and 316c in the insulating layer 316 that expose portions of the redistribution line layer 320, thereby electrically connecting the redistribution line layer 320 to an external circuit. Then, a dicing process is performed to cut the flexible material layer 350 and the redistribution line layer 320 from the dicing channel 352L to form multiple discrete micro-LED package structures. In some embodiments, the dicing process includes laser cutting, diamond wheel sawing, or other suitable dicing processes. Finally, the thin film layer 326 is removed to form a structure as shown. Figure 7 The micro-LED package structure 500g is shown. Compared to micro-LED package structures 500a-500f, the method of forming micro-LED package structure 500g includes placing a control element 312 on a carrier substrate 300, forming a redistribution line layer 320, and then transferring a micro-LED 305 onto the carrier substrate 300 after forming the redistribution line layer 320. Before forming the redistribution line layer 320, an insulating layer 316 is formed to cover the carrier substrate 300 and the control element 312. Furthermore, a flexible material layer 350 is formed before removing the carrier substrate 300.

[0135] Figures 25A-25D The image shows the formation of... Figure 8 The diagram shown is a cross-sectional view of a miniature light-emitting diode package structure 500h at different stages according to some embodiments of this disclosure. Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I , Figures 22A-22I , Figures 23A-23H , Figures 24A-24H The same or similar element symbols represent the same or similar elements.

[0136] like Figure 25A As shown, proceed in sequence. Figures 24A-24EFollowing the process shown, a coating process is performed to form a light-shielding layer 336 that conforms to the redistribution circuit layer 320 and surrounds the micro light-emitting diodes 306, 308, and 310.

[0137] Next, as Figures 25B-25D As shown, proceed in sequence. Figures 24F-24H The process shown involves forming a flexible material layer 350 covering a light-shielding layer 336, a control element 312, and miniature light-emitting diodes 306, 308, and 310. Next, a thin film layer 326 is attached to the second side 320-2 of the redistribution circuit layer 320. Then, the carrier substrate 300 is removed from the adhesive layer 304R. Following this, the flexible material layer 350 and the redistribution circuit layer 320 are cut from the dicing channel 352L to form multiple discrete miniature light-emitting diode package structures. Finally, the thin film layer 326 is removed, forming... Figure 8 The micro-LED package structure 500h is shown. Compared to the micro-LED package structure 500g, the micro-LED package structure 500h forms a light-shielding layer 336 after forming the redistribution line layer 320 and mass-transferring the micro-LEDs 305 onto the carrier substrate 300. The light-shielding layer 336 is formed between the redistribution line layer 320 and the flexible material layer 350, and surrounds the micro-LEDs 305.

[0138] Figures 26A-26G To form such Figure 9 The figures shown are cross-sectional schematic diagrams of the micro light-emitting diode package structure 500i at different stages according to some embodiments of this disclosure, and are consistent with... Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I , Figures 22A-22I , Figures 23A-23H , Figures 24A-24H , Figures 25A-25D The same or similar element symbols represent the same or similar elements.

[0139] like Figure 26A As shown, proceed in sequence. Figures 24A-24C Following the process shown, a plating process is performed to form multiple solder pads 324 on the insulating layer 316. The solder pads 324 are used to electrically connect the redistribution circuit layer 320 subsequently formed thereon to external circuitry.

[0140] Next, as Figure 26B As shown, a deposition process and subsequent patterning process are performed to form a dispersed Bragg reflector layer 340 on the insulating layer 316. Furthermore, the dispersed Bragg reflector layer 340 has multiple openings 340a, 340b, and 340c to expose the contact pads 312p and solder pads 324 of the control element 312, respectively.

[0141] Next, as Figures 26C-26G As shown, proceed in sequence. Figures 24D-24H The process shown involves forming a redistribution layer 320 on the distributed Bragg reflector layer 340 and the control element 312. Next, multiple micro-LEDs 305 are transferred onto the carrier substrate 320. A flexible material layer 350 is formed covering the distributed Bragg reflector layer 340, the control element 312, and the micro-LEDs 306, 308, and 310. Then, a thin film layer 326 is attached to the second side 320-2 of the redistribution layer 320. The carrier substrate 300 is then removed from the adhesive layer 304R. The flexible material layer 350 and the redistribution layer 320 are then cut from the dicing channel 352L to form multiple discrete micro-LED package structures. Finally, the thin film layer 326 is removed, forming... Figure 9 The micro-LED package structure 500i is shown. Compared to the micro-LED package structure 500g, the micro-LED package structure 500i forms a distributed Bragg reflector layer 340 close to the multiple electrodes 306p, 308p, and 310p of the micro-LEDs 306, 308, and 310 before forming the redistribution line layer 320, and the redistribution line layer 320 contacts the distributed Bragg reflector layer 340.

[0142] Figures 27A-27D To form such Figure 10 The diagram shown is a cross-sectional view of a 500k miniature light-emitting diode package structure according to some embodiments of this disclosure at different stages. Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I , Figures 22A-22I , Figures 23A-23H , Figures 24A-24H , Figures 25A-25D , Figures 26A-26G The same or similar element symbols represent the same or similar elements.

[0143] like Figure 27A As shown, similar procedures are performed sequentially. Figures 24A-24C , Figures 26A-26D After the process shown, a similar process is performed. Figure 25A The process shown forms a light-shielding layer 336 that conforms to cover the redistribution circuit layer 320 and the distributed Bragg reflector layer 340, and surrounds the micro light-emitting diodes 306, 308, and 310.

[0144] Next, as Figures 27B-27D As shown, proceed in sequence. Figures 24F-24HThe process shown involves forming a flexible material layer 350 covering a light-shielding layer 336, a distributed Bragg reflector layer 340, a control element 312, and miniature light-emitting diodes 306, 308, and 310. Next, a thin film layer 326 is attached to the second side 320-2 of the redistribution circuit layer 320. Then, the carrier substrate 300 is removed from the adhesive layer 304R. Subsequently, the light-shielding layer 336, the distributed Bragg reflector layer 340, the flexible material layer 350, and the redistribution circuit layer 320 are cut from the dicing channel 352L to form multiple discrete miniature light-emitting diode package structures. Finally, the thin film layer 326 is removed, forming a package structure as shown. Figure 10 The micro-LED package structure 500k is shown. Compared to the micro-LED package structure 500g, the micro-LED package structure 500k forms a Bragg reflector layer 340 before forming the redistribution line layer 320. Furthermore, after forming the redistribution line layer 320 and mass-transferring the micro-LEDs 305 onto the carrier substrate 300, a light-shielding layer 336 is formed.

[0145] Figures 28A-28F To form such Figure 11 The figures shown are cross-sectional schematic diagrams of the miniature light-emitting diode package structure of some embodiments of the present disclosure at different stages of 500L. Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I , Figures 22A-22I , Figures 23A-23H , Figures 24A-24H , Figures 25A-25D , Figures 26A-26G , Figures 27A-27D The same or similar element symbols represent the same or similar elements.

[0146] like Figure 28A As shown, firstly, a carrier plate 400 is provided. In some embodiments, carrier plates 200, 300, and 400 comprise the same or similar material. Next, an adhesive layer 404 is applied to the surface 401 of the carrier plate 400. In some embodiments, adhesive layers 204, 304, and 404 comprise the same or similar material. In some embodiments, the adhesive layer 404 may not be applied to the carrier plate 400.

[0147] Next, as Figure 28BAs shown, a coating process and subsequent patterning process are performed to form an insulating layer 416 covering the surface 401 of the carrier board 400. The insulating layer 416 serves as a support layer for the control element 412 and has openings 416a and 416b to define the connection portions between the redistribution circuit layer 420 subsequently formed thereon and external circuitry. After forming the insulating layer 416, the control element 412 is disposed on the insulating layer 416. In some embodiments, the back surface 412b of the control element 412 contacts the insulating layer 416.

[0148] Next, as Figure 28C As shown, after the control element 412 is placed on the carrier board 400, a plating process and subsequent patterning process are performed to form a redistribution circuit layer 420 on the control element 412. The redistribution circuit layer 420 partially covers the insulating layer 416 and passes through the openings 416a and 416b of the insulating layer 416. Figure 28B It is electrically connected to control element 412. For example... Figure 28C As shown, the control element 412 is disposed on the first side 420-1 of the redistribution line layer 420.

[0149] Next, as Figure 28D As shown, after forming the redistribution line layer 420, a large number of miniature light-emitting diodes 405 (including miniature light-emitting diodes 406, 408, and 410) are mass-transferred to directly above the control element 412. Furthermore, the miniature light-emitting diodes 405 are disposed on the second side 420-2 of the redistribution line layer 420. Figure 28D As shown, the electrodes 406p, 408p, and 410p of the micro-LEDs 406, 408, and 410 are electrically connected to the redistribution circuit layer 420. Furthermore, the back surfaces 406b, 408b, and 410b of the micro-LEDs 406, 408, and 410 are located away from the carrier substrate 400. In some embodiments, the micro-LEDs 205, 305, and 405 have the same or similar configuration and arrangement.

[0150] Next, as Figure 28E As shown, a lamination or coating process is performed to form a flexible material layer 450, which covers the control element 412 and the micro-light-emitting diodes 406, 408, and 410. In some embodiments, the flexible material layer 450 contacts the back surfaces 406b, 408b, and 410b of the micro-light-emitting diodes 406, 408, and 410, and is separated from the control element 412 by a redistribution circuit layer 420.

[0151] Next, as Figure 28FAs shown, a removal process is performed to remove the carrier board 400 from the adhesive layer 404. In some embodiments, the removal process includes laser debonding or other suitable removal processes. Next, a dicing process is performed to cut the flexible material layer 450 and the redistribution circuit layer 420 from the dicing channel 452L to form multiple discrete micro-LED package structures. In some embodiments, the dicing process includes laser cutting, diamond wheel sawing, or other suitable dicing processes. Finally, a package structure is formed as shown... Figure 11 The micro-LED package structure 500l is shown. Compared to micro-LED package structures 500a-500i and 500k, the method of forming the micro-LED package structure 500l includes placing a control element 412 on a carrier substrate 400, forming a redistribution line layer 420, and then transferring a micro-LED 405 directly above the control element 412 after forming the redistribution line layer 420. Before placing the control element 412, an insulating layer 416 is formed to cover the carrier substrate 400. Furthermore, before removing the carrier substrate 400, a flexible material layer 450 is formed.

[0152] Figures 29A-29E To form such Figure 12 The figures shown are cross-sectional schematic diagrams of the 500μm miniature light-emitting diode package structure of some embodiments of this disclosure at different stages, and are consistent with... Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I , Figures 22A-22I , Figures 23A-23H , Figures 24A-24H , Figures 25A-25D , Figures 26A-26G , Figures 27A-27D , Figures 28A-28F The same or similar element symbols represent the same or similar elements.

[0153] like Figure 29A As shown, similar procedures are performed sequentially. Figure 28A , Figure 28B Following the process shown, a deposition process and subsequent patterning process are performed to form a dispersed Bragg reflector layer 440 on the insulating layer 416. Furthermore, the dispersed Bragg reflector layer 440 has multiple openings corresponding to the openings 416a, 416b and the electrode positions of the subsequently transferred micro-LEDs 405, allowing the subsequently formed redistribution line layer 420 to pass through these openings to electrically connect the control element 412 and the micro-LEDs 405 to an external circuit.

[0154] Next, as Figures 29B-29E As shown, proceed in sequence. Figures 28C-28FThe process shown involves forming a redistribution layer 420 on the distributed Bragg reflector layer 440 and the control element 412. Then, a mass transfer of multiple micro-LEDs 405 (including micro-LEDs 406, 408, and 410) is made directly above the control element 412. Next, a flexible material layer 450 is formed, covering the distributed Bragg reflector layer 440, the control element 412, and the micro-LEDs 406, 408, and 410. Afterward, the carrier substrate 400 is removed from the adhesive layer 404. Then, the distributed Bragg reflector layer 440, the flexible material layer 450, and the redistribution layer 420 are cut from the dicing channel 452L, finally forming the desired result. Figure 12 The micro LED package structure 500m is shown. Compared to the micro LED package structure 500l, the micro LED package structure 500m forms a distributed Bragg reflector layer 440 close to the electrodes 406p, 408p, and 410p of the micro LEDs 406, 408, and 410 before forming the redistribution line layer 420, and the redistribution line layer 420 contacts the distributed Bragg reflector layer 440.

[0155] Figures 30A-30C To form such Figure 13 The figures shown are cross-sectional schematic diagrams of the micro light-emitting diode package structure 500n at different stages according to some embodiments of this disclosure, and are consistent with... Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I , Figures 22A-22I , Figures 23A-23H , Figures 24A-24H , Figures 25A-25D , Figures 26A-26G , Figures 27A-27D , Figures 28A-28F , Figures 29A-29E The same or similar element symbols represent the same or similar elements.

[0156] like Figure 30A As shown, similar procedures are performed sequentially. Figures 28A-28D Following the process shown, a coating process is performed to form a light-shielding layer 436 that conformally covers the redistribution circuit layer 420 and the control element 412, and surrounds the micro light-emitting diodes 406, 408, and 410.

[0157] Next, as Figure 30B , Figure 30C As shown, proceed in sequence. Figure 28E , Figure 28FThe process shown involves forming a flexible material layer 450, covering a light-shielding layer 436, control elements 412, and micro-light-emitting diodes 406, 408, and 410. Then, the carrier board 400 is removed from the adhesive layer 404. Next, the light-shielding layer 436, the flexible material layer 450, and the redistribution circuit layer 420 are cut from the dicing channel 452L, finally forming the... Figure 13 The micro-LED package structure 500n is shown. Compared to the micro-LED package structure 500l, the micro-LED package structure 500n forms a light-shielding layer 436 after forming the redistribution line layer 420 and mass-transferring the micro-LEDs 405 onto the carrier 400.

[0158] Figures 31A-31C Figures 31A-31C To form such Figure 14 The diagram shown is a cross-sectional view of a 500p miniature light-emitting diode package structure according to some embodiments of the present disclosure at different stages. Figures 1-16 , Figures 17A-17K , Figures 18A-18E , Figures 19A-19J , Figures 20A-20I , Figures 21A-21I , Figures 22A-22I , Figures 23A-23H , Figures 24A-24H , Figures 25A-25D , Figures 26A-26G , Figures 27A-27D , Figures 28A-28F , Figures 29A-29E , Figures 30A-30C The same or similar element symbols represent the same or similar elements.

[0159] like Figure 31A As shown, similar procedures are performed sequentially. Figure 28A , Figure 28B , Figures 29A-29C After the process shown, a similar process is performed. Figure 30A The process shown forms a light-shielding layer 436 that conformally covers the distributed Bragg reflector layer 440, the redistribution circuit layer 420, and the control element 412, and surrounds the micro light-emitting diodes 406, 408, and 410.

[0160] Next, as Figure 31B , Figure 31C As shown, proceed in sequence. Figure 28E , Figure 28F The process shown involves forming a flexible material layer 450, covering a light-shielding layer 436, a distributed Bragg reflector layer 440, a control element 412, and micro-LEDs 406, 408, and 410. Then, the carrier substrate 400 is removed from the adhesive layer 404. Next, the light-shielding layer 436, the distributed Bragg reflector layer 440, the flexible material layer 450, and the redistribution circuitry layer 420 are cut from the dicing channel 452L, finally forming the... Figure 14 The micro-LED package structure 500p is shown. Compared to the micro-LED package structure 500l, the micro-LED package structure 500p forms a distributed Bragg reflector layer 440 close to the electrodes 406p, 408p, and 410p of the micro-LEDs 406, 408, and 410 before forming the redistribution line layer 420. Furthermore, after forming the redistribution line layer 420 and mass-transferring the micro-LEDs 405 onto the carrier substrate 400, a light-shielding layer 436 is formed.

[0161] The micro-LED packaging structure and its formation method according to embodiments of the present invention can integrate a control element and multiple micro-LEDs into a single packaging structure to form a pixel package that can be controlled individually / independently. The micro-LED packaging structure includes a redistribution line layer, a control element, multiple micro-LEDs, and a flexible material layer. The control element and micro-LEDs are disposed on and electrically connected to the redistribution line layer. The flexible material layer covers the control element and micro-LEDs, wherein the micro-LEDs contact the flexible material layer. In some embodiments, the micro-LED packaging structure further includes a distributed Bragg reflector layer close to the electrodes of the micro-LEDs and in contact with the redistribution line layer to increase the luminous efficiency of the micro-LED packaging structure. In some embodiments, the micro-LED packaging structure further includes a light-shielding layer disposed between the redistribution line layer and the flexible material layer, which can improve the contrast of the micro-LED packaging structure. In some embodiments, the control element and micro-LEDs may be disposed on the same side or opposite sides of the redistribution line layer. Alternatively, the micro-LEDs may be disposed directly above the control element, for example, a thin-film transistor device, to further reduce the size of the micro-LED packaging structure. The miniature light-emitting diode packaging structure of this invention can further reduce the packaging structure volume for application in small-pitch displays, such as wearable display devices.

[0162] While the present invention has been disclosed above with reference to the foregoing embodiments, it is not intended to limit the invention. Those skilled in the art can make modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A miniature light-emitting diode (LED) package structure, comprising: A single distributed line layer; A control element is disposed on the redistribution line layer and electrically connected to the redistribution line layer; Multiple miniature light-emitting diodes are disposed on the redistribution line layer and electrically connected to the redistribution line layer; A flexible material layer covers the control element and the micro LED, wherein the micro LED contacts the flexible material layer; A first insulating layer is disposed between the redistribution circuit layer and the flexible material layer; A second insulating layer is disposed below the first insulating layer; as well as A solder pad passes through the second insulating layer and is electrically connected to the redistribution layer.

2. The micro light-emitting diode package structure as claimed in claim 1, wherein the control element comprises a micro driver integrated circuit device, a micro control integrated circuit device, a thin film transistor device, or a combination thereof.

3. The micro LED packaging structure of claim 1, wherein the micro LED comprises a plurality of electrodes, and the redistribution line layer contacts the electrodes, and wherein each micro LED has a back side away from the electrodes, and the flexible material layer contacts the back side of the micro LED.

4. The micro LED packaging structure as claimed in claim 3, wherein at least one of the micro LEDs has a rough back surface.

5. The micro light-emitting diode packaging structure as described in claim 1, further comprising: A light-shielding layer is disposed between the redistribution circuit layer and the flexible material layer, and surrounds the micro light-emitting diode.

6. The micro light-emitting diode packaging structure as described in claim 3, further comprising: A distributed Bragg reflector layer is located close to the electrode of the micro LED and in contact with the redistribution line layer.

7. The micro LED packaging structure of claim 6, wherein, in a top view, the area of ​​the distributed Bragg reflector layer is between 10% and 95% of the total area of ​​an upper surface of the micro LED packaging structure.

8. The micro LED package structure as claimed in claim 1, wherein the redistribution line layer includes a first side, and the control element and the micro LED are disposed on the first side.

9. The micro LED package structure of claim 3, wherein the control element has a back side and a contact pad, and the back side is away from the contact pad, wherein the back side of the control element is flush with the back side of the micro LED.

10. The micro LED package structure of claim 1, wherein the first insulating layer surrounds the control element and the micro LED.

Images