A novel high-low voltage composite electric spark jet blast machining pulse power supply and method

Abstract

The application discloses a novel high-low voltage composite electric spark jet blast machining pulse power supply and method, which comprises a signal generation module, a power amplifier circuit module, a MOSFET series-parallel connection module and a gap detection module; the gap detection module is used for detecting the gap distance between a workpiece and a tool electrode to generate a gap signal, which is fed back to the signal generation module; the signal generation module generates a frequency modulation pulse signal based on the gap signal to transmit to the power amplifier circuit module; the power amplifier circuit module controls the driving power of the frequency modulation pulse signal; the power amplifier circuit module transmits the frequency modulation pulse signal of steady input / output to the MOSFET series-parallel connection module to generate a switching signal, and controls the high / low voltage power supply to be loaded to the gap between the workpiece and the tool electrode to discharge. The application solves the problem that the explosion force generated between electrodes in the discharge process of the traditional electric spark pulse power supply is low, the reinforced body particles cannot be completely thrown out under the action of the explosion force, and the machining surface quality and machining efficiency are low.

Description

Technical Field

[0001] This invention relates to the field of electrical discharge machining power supplies, and in particular to a novel high-low voltage composite electrical discharge machining pulse power supply and method. Background Technology

[0002] Particle-reinforced metal matrix composites (PMMCs) are increasingly widely used in aerospace, aviation, and rail transportation due to their superior material properties such as high strength and high hardness. In the field of electrical discharge machining (EDM), spark discharge is commonly used to remove metal and process PMMC workpieces. The EDM power supply, as a crucial component of the EDM system, provides the pulse energy required for metal removal through spark discharge. The performance of the EDM power supply directly affects the quality of the processed workpiece. However, during the EDM process, traditional pulsed EDM power supplies generate insufficient explosive force between the electrodes during discharge, failing to completely eject the reinforcing particles along with the metal matrix. This results in poor surface finish, severe electrode wear, and low processing efficiency. Summary of the Invention

[0003] This invention provides a novel high-low voltage composite EDM pulse power supply and method to overcome the problems of low explosive force generated between electrodes during the discharge process in traditional EDM pulse power supplies, which cannot completely eject reinforcing particles with the metal matrix under the action of explosive force, resulting in low surface quality, serious electrode wear and low processing efficiency.

[0004] To achieve the above objectives, the technical solution of the present invention is as follows: A novel high- and low-voltage composite electric spark detonation pulse power supply includes a signal generation module, a power amplifier circuit module, a MOSFET series-parallel module, and a gap detection module; The gap detection module is used to detect the gap distance between the workpiece and the tool electrode, generate a gap signal, and feed the gap signal back to the signal generation module. The signal generation module controls the explosion power parameters in real time based on the gap signal to generate a frequency-modulated pulse signal, and transmits the frequency-modulated pulse signal to the power amplifier circuit module. The power amplifier circuit module controls the driving power of the frequency modulation pulse signal, performs steady-state adjustment on the input and output of the frequency modulation pulse signal, and transmits the frequency modulation pulse signal after steady-state adjustment to the MOSFET series-parallel module. The MOSFET series-parallel module controls the high-voltage power switch and low-voltage power switch of the MOSFET series-parallel module to turn on and off according to the frequency modulation pulse signal after steady-state adjustment of the input and output, thereby controlling the high-voltage power supply and low-voltage power supply to be applied to the gap between the workpiece and the tool electrode for discharge.

[0005] Furthermore, the gap detection module includes a gap voltage detection circuit and a gap current detection circuit; The gap voltage detection circuit includes a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a seventh capacitor C7, a first comparator UA, a twelfth resistor R12, an eighth capacitor C8, a thirteenth resistor R13, a second comparator UB, and a ninth capacitor C9. The tool electrode is connected to one end of the ninth resistor R9. The other end of the ninth resistor R9 is connected to one end of the tenth resistor R10, one end of the seventh capacitor C7, and the negative input terminal of the first comparator UA. The other end of the tenth resistor R10 is connected to the other end of the seventh capacitor C7 and one end of the eleventh resistor R11. The other end of the eleventh resistor R11 is connected to the workpiece. The positive input terminal of the first comparator UA is connected to the open-circuit threshold voltage U1. Pin 1 of the first comparator UA is connected to one end of the twelfth resistor R12 and pin VCC5. Pin 2 of the first comparator UA is connected to one end of the eighth capacitor C8. The other end of the eighth capacitor C8 is grounded. The other end of the twelfth resistor R12 is connected to the anode of the first diode D1, the cathode of the second diode D2, and the first... The output pin OUT3 of comparator UA is connected to the first comparator UA. The cathode of the first diode D1 is connected to the VCC9 pin. The anode of the second diode D2 is connected to the other end of the eighth capacitor C8. The output pin OUT3 of the first comparator UA is connected to the main control microcontroller of the signal generation module. The negative input terminal of the second comparator UB is connected to the negative input terminal of the first comparator UA. The positive input terminal of the second comparator UB is connected to the short-circuit threshold voltage U2. Pin 1 of the second comparator UB is connected to one end of the thirteenth resistor R13 and pin VCC6. Pin 2 of the second comparator UB is connected to one end of the ninth capacitor C9. The other end of the ninth capacitor C9 is grounded. The other end of the thirteenth resistor R13 is connected to the anode of the third diode D3, the cathode of the fourth diode D4, and the output pin OUT4 of the second comparator UB. The cathode of the third diode D3 is connected to the VCC10 pin. The anode of the fourth diode D4 is connected to the other end of the ninth capacitor C9. The output pin OUT4 of the second comparator UB is connected to the main control microcontroller of the signal generation module. The gap current detection circuit includes an ACS712 chip, a fourteenth resistor R14, a tenth capacitor C10, a fifteenth resistor R15, a third comparator UC, and an eleventh capacitor C11. The tool electrode is connected to pin 1 and pin 2 of the ACS712 chip. Pins 3 and 4 of the ACS712 chip are connected to the workpiece. Pin 8 of the ACS712 chip is connected to pin VCC7. Pin 5 of the ACS712 chip is grounded. Pin 7 of the ACS712 chip is connected to one end of the fourteenth resistor R14. The other end of the fourteenth resistor R14 is connected to one end of the tenth capacitor C10 and the negative input terminal of the third comparator UC. The tenth capacitor C10... The other end is grounded. The positive input terminal of the third comparator UC is connected to a preset threshold voltage U3. Pin 1 of the third comparator UC is connected to one end of the fifteenth resistor R15 and pin VCC8. Pin 2 of the third comparator UC is connected to one end of the eleventh capacitor C11. The other end of the eleventh capacitor C11 is grounded. The other end of the fifteenth resistor R15 is connected to the anode of the fifth diode D5, the cathode of the sixth diode D6, and the output pin OUT5 of the third comparator UC. The cathode of the fifth diode D5 is connected to pin VCC11. The anode of the sixth diode D6 is connected to the other end of the eleventh capacitor C11. The output pin OUT5 of the third comparator UC is connected to the main control microcontroller of the signal generation module.

[0006] Furthermore, the signal generation module includes a main control microcontroller, a high-voltage pulse generation circuit, and a low-voltage pulse generation circuit, wherein the main control microcontroller is connected to the high-voltage pulse generation circuit and the low-voltage pulse generation circuit respectively; The low-voltage pulse generating circuit includes a first dual-ended RAM memory, a first slave microcontroller, and a first integrated frequency synthesizer; the high-voltage pulse generating circuit includes a second dual-ended RAM memory, a second slave microcontroller, and a second integrated frequency synthesizer. The pins P0.0, P0.1, P0.2, P0.3, P0.4, P0.5, P0.6, P0.7, WR, PSEN, and RD of the main control microcontroller are sequentially connected to the pins AD0, AD1, AD2, AD3, AD4, AD5, AD6, AD7, WEA, CEA, and OEA of the first and second dual-ended RAM memories, respectively. The pins BD0, BD1, BD2, BD3, BD4, BD5, BD6, BD7, WEB, CEB, and OEB of the first dual-ended RAM memory are sequentially connected to the pins AD0, AD1, AD2, AD3, AD4, AD5, AD6, AD7, WEB, CEA, and OEA of the second dual-ended RAM memory, respectively. A slave microcontroller is connected to pins P0.0, P0.1, P0.2, P0.3, P0.4, P0.5, P0.6, P0.7, WR, ALE, and RD. Pins P2.0, P2.1, P2.2, P2.3, P2.4, P2.5, P2.6, P2.7, P1.4, P1.5, P1.6, and P1.7 of the slave microcontroller are sequentially connected to pins D0, D1, D2, D3, D4, D5, D6, D7, RESET, DATA, FQ_UD, and W_CLK of the integrated frequency synthesizer. The pins BD0, BD1, BD2, BD3, BD4, BD5, BD6, BD7, WEB, CEB, and OEB of the second dual-ended RAM memory are sequentially connected to the pins P0.0, P0.1, P0.2, P0.3, P0.4, P0.5, P0.6, P0.7, WR, ALE, and RD of the second slave microcontroller. The pins P2.0, P2.1, P2.2, and OEB of the second slave microcontroller are also connected to these pins. Pins P2.3, P2.4, P2.5, P2.6, P2.7, P1.4, P1.5, P1.6, and P1.7 are connected sequentially to pins D0, D1, D2, D3, D4, D5, D6, D7, RESET, DATA, FQ_UD, and W_CLK of the second integrated frequency synthesizer. Pin OUT1 of the first integrated frequency synthesizer and pin OUT2 of the second integrated frequency synthesizer are connected to the power amplifier circuit module.

[0007] Furthermore, the power amplifier circuit module includes a high-voltage power amplifier circuit and a low-voltage power amplifier circuit. The low-voltage power amplifier circuit includes a low-voltage optocoupler isolation circuit and a low-voltage pulse drive circuit. The high-voltage power amplifier circuit includes a high-voltage optocoupler isolation circuit and a high-voltage pulse drive circuit. The low-voltage optocoupler isolation circuit includes a first resistor R1, a second resistor R2, a first optocoupler chip, a third resistor R3, and a first capacitor C1; the low-voltage pulse driving circuit includes a fourth resistor R4, a second capacitor C2, a third capacitor C3, and a first driving chip; one end of the first resistor R1 is connected to pin OUT1 of the first integrated frequency synthesizer, and the other end of the first resistor R1 is connected to pin 2 of the first optocoupler chip; pin 7 of the first optocoupler chip is connected to pin 8 of the first optocoupler chip, one end of the first capacitor C1, one end of the third resistor R3, and pin VCC1; one end of the second resistor R2 is connected to pin 3 of the first optocoupler chip, and pin 5 of the first optocoupler chip... The other end of the second resistor R2 and the other end of the first capacitor C1 are connected to ground. Pin 6 of the first optocoupler chip is connected to the other end of the third resistor R3, pin 2 of the first driver chip, and one end of the fourth resistor R4. The other end of the fourth resistor R4 is connected to pin 4 and pin 5 of the first driver chip, one end of the second capacitor C2, and one end of the third capacitor C3 and grounded. The other end of the second capacitor C2 is connected to the other end of the third capacitor C3, pin 1 and pin 8 of the first driver chip, and pin VCC2. Pin 6 of the first driver chip is connected to pin 7 of the first driver chip and connected to the MOSFET series-parallel module. The high-voltage optocoupler isolation circuit includes a fifth resistor R5, a sixth resistor R6, a second optocoupler chip, a seventh resistor R7, and a fourth capacitor C4; the high-voltage pulse drive circuit includes an eighth resistor R8, a fifth capacitor C5, a sixth capacitor C6, and a second drive chip; one end of the fifth resistor R5 is connected to pin OUT2 of the second integrated frequency synthesizer, and the other end of the fifth resistor R5 is connected to pin 2 of the second optocoupler chip; pins 7 and 8 of the second optocoupler chip, one end of the fourth capacitor C4, and one end of the seventh resistor R7 are connected to pin VCC3; one end of the sixth resistor R6 is connected to pin 3 of the second optocoupler chip; and pins 5 and 6 of the second optocoupler chip are connected to pins 8 and 8 respectively. The other end of the sixth resistor R6 and the other end of the fourth capacitor C4 are connected to ground. Pin 6 of the second optocoupler chip is connected to the other end of the seventh resistor R7, pin 2 of the second driver chip, and one end of the eighth resistor R8. The other end of the eighth resistor R8 is connected to pin 4 and pin 5 of the second driver chip, one end of the fifth capacitor C5, and one end of the sixth capacitor C6 and grounded. The other end of the fifth capacitor C5 is connected to the other end of the sixth capacitor C6, pin 1 and pin 8 of the second driver chip, and pin VCC4. Pin 6 of the second driver chip is connected to pin 7 of the second driver chip and connected to the MOSFET series-parallel module.

[0008] Furthermore, the MOSFET series-parallel module includes a first NMOS transistor Q1, a second NMOS transistor Q2, a third NMOS transistor Q3, a fourth NMOS transistor Q4, a low-voltage DC power supply DC1, and a high-voltage DC power supply DC2. The gate of the first NMOS transistor Q1 is connected to the gate of the second NMOS transistor Q2, pin 6 of the first driver chip, and pin 7 of the first driver chip. The drain of the first NMOS transistor Q1 and the drain of the second NMOS transistor Q2 are connected to the positive terminal of the low-voltage DC power supply DC1. The source of the first NMOS transistor Q1 is connected to the drain of the third NMOS transistor Q3. The source of the second NMOS transistor Q2 and the drain of the fourth NMOS transistor Q4 are connected to the positive terminal of the high-voltage DC power supply DC2. The gate of the third NMOS transistor Q3 and the gate of the fourth NMOS transistor Q4, pin 6 of the second driver chip, and pin 7 of the second driver chip are connected to the tool electrode. The negative terminals of the low-voltage DC power supply DC1 and the high-voltage DC power supply DC2 are connected to the workpiece.

[0009] Furthermore, the master microcontroller, the first slave microcontroller, and the second slave microcontroller all adopt the STC series microcontroller STC89C52.

[0010] Furthermore, the first dual-ended RAM memory and the second dual-ended RAM memory use the DS1609 chip, and the first integrated frequency synthesizer and the second integrated frequency synthesizer use the AD9850 chip.

[0011] Furthermore, the high-voltage optocoupler isolation circuit and the low-voltage optocoupler isolation circuit use the 6N137 chip, and the high-voltage pulse drive circuit and the low-voltage pulse drive circuit use the UCC37322 chip.

[0012] A novel high-low voltage composite electro-discharge pulse power supply processing method includes: Step S1: After the tool electrode and the workpiece reach the breakdown distance, the gap voltage detection circuit and the gap current detection circuit of the gap detection module are used to collect the average gap voltage value and the average gap current value between the tool electrode and the workpiece. The average gap current value is converted by the gap current detection circuit to obtain the average gap current value converted voltage value. Step S2: Compare the average gap voltage value with the open-circuit threshold voltage U1 and the short-circuit threshold voltage U2; compare the average gap current value with the preset threshold voltage U3. If the average gap voltage is less than the open-circuit threshold voltage U1 and greater than the short-circuit threshold voltage U2, and the average gap current converted to voltage is greater than the preset threshold voltage U3, then the normal EDM processing state is reached, and step S3 is executed; otherwise, step S1 is executed. Step S3: The main control microcontroller of the signal generation module uses the high-voltage pulse generation circuit and the low-voltage pulse generation circuit to control the power supply parameters, thereby controlling the signal generation module to output a frequency-modulated pulse signal. The power amplifier circuit module controls the driving power of the frequency-modulated pulse signal, performs steady-state adjustment on the input and output of the frequency-modulated pulse signal, and transmits the frequency-modulated pulse signal after steady-state adjustment to the MOSFET series-parallel module. Step S4: By inputting and outputting the frequency modulation pulse signal after steady-state adjustment, control the high-voltage power switch and low-voltage power switch of the MOSFET series-parallel module to turn on and off, so that the high and low voltage power supplies are loaded into the gap to complete the discharge. After the discharge is completed, the next discharge cycle begins.

[0013] Step S5: Repeat steps S1 to S4 above to achieve continuous processing of the workpiece.

[0014] Beneficial Effects: This invention provides a novel high-low voltage composite EDM (Electrical Discharge Machining) pulse power supply and method. A gap detection module is used to detect the gap distance between the workpiece and the tool electrode, generating a gap signal. This gap signal is fed back to a signal generation module. Based on the gap signal, the signal generation module controls the parameters of the EDM power supply in real time to generate a frequency-modulated pulse signal, which is then transmitted to a power amplifier module. The power amplifier module controls the driving power of the frequency-modulated pulse signal, performing steady-state adjustment on and off the input and output. The power amplifier module then transmits the adjusted frequency-modulated pulse signal to a MOSFET series-parallel module. Based on the adjusted frequency-modulated pulse signal, the MOSFET series-parallel module controls the switching on and off of the high-voltage and low-voltage power switches, thereby controlling the high-voltage and low-voltage power supplies to discharge through the gap between the workpiece and the tool electrode. This increases the explosive force generated between the electrodes during the discharge process, allowing the reinforcing particles to be completely ejected with the metal matrix under the action of the explosive force, reducing electrode wear, and improving the surface quality and processing efficiency of the workpiece. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of the structure of a novel high-low voltage composite electric spark detonation pulse power supply according to the present invention; Figure 2 This is a circuit diagram of the signal generation module of a novel high-low voltage composite electric spark detonation pulse power supply according to the present invention. Figure 3 This is a circuit diagram of the power amplifier circuit module of a novel high-low voltage composite electric spark detonation pulse power supply of the present invention. Figure 4 This is a circuit diagram of a gap detection module for a novel high-low voltage composite electric spark detonation pulse power supply according to the present invention. Figure 5 This is a structural connection block diagram of a novel high-low voltage composite electric spark detonation pulse power supply according to the present invention; Figure 6 This is a flowchart of a method for a novel high-low voltage composite electric spark detonation pulse power supply according to the present invention. Figure 7 This is a schematic diagram of the power pulse waveform of a novel high-low voltage composite electric spark detonation pulse power supply according to the present invention. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] This embodiment provides a novel high-low voltage composite EDM pulse power supply, such as... Figure 1 As shown, it includes a signal generation module, a power amplifier circuit module, a MOSFET series-parallel module, and a gap detection module; The gap detection module is used to detect the gap distance between the workpiece and the tool electrode, generate a gap signal, and feed the gap signal back to the signal generation module. The signal generation module controls the explosion power parameters in real time based on the gap signal to generate a frequency-modulated pulse signal, and transmits the frequency-modulated pulse signal to the power amplifier circuit module. The power amplifier circuit module controls the driving power of the frequency modulation pulse signal, performs steady-state adjustment on the input and output of the frequency modulation pulse signal, and transmits the frequency modulation pulse signal after steady-state adjustment to the MOSFET series-parallel module. The MOSFET series-parallel module controls the switching on and off of the high-voltage and low-voltage power switches based on the frequency-modulated pulse signals after steady-state adjustment of the input and output. This, in turn, controls the high-voltage and low-voltage power supplies to be applied to the gap between the workpiece and the tool electrode for discharge. This increases the explosive force generated between the electrodes during the discharge process, allowing the reinforcing particles to be completely ejected along with the metal matrix under the action of the explosive force, reducing electrode wear, and improving the surface quality of the machined part and processing efficiency.

[0019] In a specific embodiment, such as Figure 4 As shown, the gap detection module includes a gap voltage detection circuit and a gap current detection circuit; The gap voltage detection circuit includes a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a seventh capacitor C7, a first comparator UA, a twelfth resistor R12, an eighth capacitor C8, a thirteenth resistor R13, a second comparator UB, and a ninth capacitor C9. The tool electrode is connected to one end of the ninth resistor R9. The other end of the ninth resistor R9 is connected to one end of the tenth resistor R10, one end of the seventh capacitor C7, and the negative input terminal of the first comparator UA. The other end of the tenth resistor R10 is connected to the other end of the seventh capacitor C7 and one end of the eleventh resistor R11. The other end of the eleventh resistor R11 is connected to the workpiece. The positive input terminal of the first comparator UA is connected to the open-circuit threshold voltage U1. Pin 1 of the first comparator UA is connected to one end of the twelfth resistor R12 and pin VCC5. Pin 2 of the first comparator UA is connected to one end of the eighth capacitor C8. The other end of the eighth capacitor C8 is grounded and connected to the other end of the twelfth resistor R12, the anode of the first diode D1, the cathode of the second diode D2, and the first... The output pin OUT3 of comparator UA is connected to the first comparator UA. The cathode of the first diode D1 is connected to the VCC9 pin. The anode of the second diode D2 is connected to the other end of the eighth capacitor C8. The output pin OUT3 of the first comparator UA is connected to the main control microcontroller of the signal generation module. The negative input terminal of the second comparator UB is connected to the negative input terminal of the first comparator UA. The positive input terminal of the second comparator UB is connected to the short-circuit threshold voltage U2. Pin 1 of the second comparator UB is connected to one end of the thirteenth resistor R13 and pin VCC6. Pin 2 of the second comparator UB is connected to one end of the ninth capacitor C9. The other end of the ninth capacitor C9 is grounded. The other end of the thirteenth resistor R13 is connected to the anode of the third diode D3, the cathode of the fourth diode D4, and the output pin OUT4 of the second comparator UB. The cathode of the third diode D3 is connected to the VCC10 pin. The anode of the fourth diode D4 is connected to the other end of the ninth capacitor C9. The output pin OUT4 of the second comparator UB is connected to the main control microcontroller of the signal generation module. The gap current detection circuit includes an ACS712 chip, a fourteenth resistor R14, a tenth capacitor C10, a fifteenth resistor R15, a third comparator UC, and an eleventh capacitor C11. The tool electrode is connected to pin 1 and pin 2 of the ACS712 chip. Pins 3 and 4 of the ACS712 chip are connected to the workpiece. Pin 8 of the ACS712 chip is connected to pin VCC7. Pin 5 of the ACS712 chip is grounded. Pin 7 of the ACS712 chip is connected to one end of the fourteenth resistor R14. The other end of the fourteenth resistor R14 is connected to one end of the tenth capacitor C10 and the negative input terminal of the third comparator UC. The tenth capacitor C10... The other end is grounded. The positive input terminal of the third comparator UC is connected to a preset threshold voltage U3. Pin 1 of the third comparator UC is connected to one end of the fifteenth resistor R15 and pin VCC8. Pin 2 of the third comparator UC is connected to one end of the eleventh capacitor C11. The other end of the eleventh capacitor C11 is grounded. The other end of the fifteenth resistor R15 is connected to the anode of the fifth diode D5, the cathode of the sixth diode D6, and the output pin OUT5 of the third comparator UC. The cathode of the fifth diode D5 is connected to pin VCC11. The anode of the sixth diode D6 is connected to the other end of the eleventh capacitor C11. The output pin OUT5 of the third comparator UC is connected to the main control microcontroller of the signal generation module.

[0020] In a specific embodiment, such as Figure 2 As shown, the signal generation module includes a main control microcontroller, a high-voltage pulse generation circuit, and a low-voltage pulse generation circuit. The main control microcontroller is connected to both the high-voltage pulse generation circuit and the low-voltage pulse generation circuit. The high-voltage pulse generation circuit and the low-voltage pulse generation circuit have the same structure. The output terminal of the low-voltage pulse generation circuit is connected to one end FB1 of the first resistor R1 of the low-voltage optocoupler isolation circuit. The output terminal of the high-voltage pulse generation circuit is connected to one end FB2 of the fifth resistor R5 of the high-voltage optocoupler isolation circuit. The low-voltage pulse generating circuit includes a first dual-ended RAM memory, a first slave microcontroller, and a first integrated frequency synthesizer; the high-voltage pulse generating circuit includes a second dual-ended RAM memory, a second slave microcontroller, and a second integrated frequency synthesizer. The pins P0.0, P0.1, P0.2, P0.3, P0.4, P0.5, P0.6, P0.7, WR, PSEN, and RD of the main control microcontroller are sequentially connected to the pins AD0, AD1, AD2, AD3, AD4, AD5, AD6, AD7, WEA, CEA, and OEA of the first and second dual-ended RAM memories, respectively. The pins BD0, BD1, BD2, BD3, BD4, BD5, BD6, BD7, WEB, CEB, and OEB of the first dual-ended RAM memory are sequentially connected to the pins AD0, AD1, AD2, AD3, AD4, AD5, AD6, AD7, WEB, CEA, and OEA of the second dual-ended RAM memory, respectively. A slave microcontroller is connected to pins P0.0, P0.1, P0.2, P0.3, P0.4, P0.5, P0.6, P0.7, WR, ALE, and RD. Pins P2.0, P2.1, P2.2, P2.3, P2.4, P2.5, P2.6, P2.7, P1.4, P1.5, P1.6, and P1.7 of the slave microcontroller are sequentially connected to pins D0, D1, D2, D3, D4, D5, D6, D7, RESET, DATA, FQ_UD, and W_CLK of the integrated frequency synthesizer. The pins BD0, BD1, BD2, BD3, BD4, BD5, BD6, BD7, WEB, CEB, and OEB of the second dual-ended RAM memory are sequentially connected to the pins P0.0, P0.1, P0.2, P0.3, P0.4, P0.5, P0.6, P0.7, WR, ALE, and RD of the second slave microcontroller. The pins P2.0, P2.1, P2.2, and OEB of the second slave microcontroller are also connected to these pins. Pins P2.3, P2.4, P2.5, P2.6, P2.7, P1.4, P1.5, P1.6, and P1.7 are connected sequentially to pins D0, D1, D2, D3, D4, D5, D6, D7, RESET, DATA, FQ_UD, and W_CLK of the second integrated frequency synthesizer. Pin OUT1 of the first integrated frequency synthesizer and pin OUT2 of the second integrated frequency synthesizer are connected to the power amplifier circuit module.

[0021] In a specific embodiment, such as Figure 3As shown, the power amplifier circuit module includes a high-voltage power amplifier circuit and a low-voltage power amplifier circuit. The low-voltage power amplifier circuit includes a low-voltage optocoupler isolation circuit and a low-voltage pulse drive circuit. The high-voltage power amplifier circuit includes a high-voltage optocoupler isolation circuit and a high-voltage pulse drive circuit. The low-voltage optocoupler isolation circuit includes a first resistor R1, a second resistor R2, a first optocoupler chip, a third resistor R3, and a first capacitor C1; the low-voltage pulse driving circuit includes a fourth resistor R4, a second capacitor C2, a third capacitor C3, and a first driving chip; one end of the first resistor R1 is connected to pin OUT1 of the first integrated frequency synthesizer, and the other end of the first resistor R1 is connected to pin 2 of the first optocoupler chip; pin 7 of the first optocoupler chip is connected to pin 8 of the first optocoupler chip, one end of the first capacitor C1, one end of the third resistor R3, and pin VCC1; one end of the second resistor R2 is connected to pin 3 of the first optocoupler chip, and pin 5 of the first optocoupler chip... The other end of the second resistor R2 and the other end of the first capacitor C1 are connected to ground. Pin 6 of the first optocoupler chip is connected to the other end of the third resistor R3, pin 2 of the first driver chip, and one end of the fourth resistor R4. The other end of the fourth resistor R4 is connected to pin 4 and pin 5 of the first driver chip, one end of the second capacitor C2, and one end of the third capacitor C3 and grounded. The other end of the second capacitor C2 is connected to the other end of the third capacitor C3, pin 1 and pin 8 of the first driver chip, and pin VCC2. Pin 6 of the first driver chip is connected to pin 7 of the first driver chip and connected to the MOSFET series-parallel module. The high-voltage optocoupler isolation circuit includes a fifth resistor R5, a sixth resistor R6, a second optocoupler chip, a seventh resistor R7, and a fourth capacitor C4; the high-voltage pulse drive circuit includes an eighth resistor R8, a fifth capacitor C5, a sixth capacitor C6, and a second drive chip; one end of the fifth resistor R5 is connected to pin OUT2 of the second integrated frequency synthesizer, and the other end of the fifth resistor R5 is connected to pin 2 of the second optocoupler chip; pins 7 and 8 of the second optocoupler chip, one end of the fourth capacitor C4, and one end of the seventh resistor R7 are connected to pin VCC3; one end of the sixth resistor R6 is connected to pin 3 of the second optocoupler chip; and pins 5 and 6 of the second optocoupler chip are connected to pins 8 and 8 respectively. The other end of the sixth resistor R6 and the other end of the fourth capacitor C4 are connected to ground. Pin 6 of the second optocoupler chip is connected to the other end of the seventh resistor R7, pin 2 of the second driver chip, and one end of the eighth resistor R8. The other end of the eighth resistor R8 is connected to pin 4 and pin 5 of the second driver chip, one end of the fifth capacitor C5, and one end of the sixth capacitor C6 and grounded. The other end of the fifth capacitor C5 is connected to the other end of the sixth capacitor C6, pin 1 and pin 8 of the second driver chip, and pin VCC4. Pin 6 of the second driver chip is connected to pin 7 of the second driver chip and connected to the MOSFET series-parallel module. The high-low voltage composite EDM pulse power supply employs a master microcontroller, slave microcontrollers, dual-ended RAM memory, integrated frequency synthesizer, optocoupler isolation, drive circuit, high / low voltage DC power supply, and MOSFET series-parallel modules. The master microcontroller uses the dual-ended RAM memory to implement hierarchical control of the low-voltage pulse circuit and the high-voltage pulse circuit, respectively. It further controls the integrated frequency synthesizer to output control pulses for the high / low voltage pulse circuits. The output control pulses pass through the optocoupler isolation circuit and drive circuit of their respective circuits. The amplified pulse control signals are then connected to the MOSFET series-parallel modules, controlling the NMOS transistors of the MOSFET series-parallel modules to turn on or off. This, in turn, controls the opening or closing of the low-voltage DC power supply DC1 and the high-voltage DC power supply DC2, allowing the high / low voltage DC power supply to be applied to the discharge gap between the tool electrode and the workpiece to complete the machining process.

[0022] In a specific embodiment, such as Figure 1 As shown, the MOSFET series-parallel module includes a first NMOS transistor Q1, a second NMOS transistor Q2, a third NMOS transistor Q3, a fourth NMOS transistor Q4, a low-voltage DC power supply DC1, and a high-voltage DC power supply DC2. The gate of the first NMOS transistor Q1 is connected to the gate of the second NMOS transistor Q2, pin 6 of the first driver chip, and pin 7 of the first driver chip. The drain of the first NMOS transistor Q1 and the drain of the second NMOS transistor Q2 are connected to the positive terminal of the low-voltage DC power supply DC1. The source of the first NMOS transistor Q1 is connected to the drain of the third NMOS transistor Q3. The source of the second NMOS transistor Q2 and the drain of the fourth NMOS transistor Q4 are connected to the positive terminal of the high-voltage DC power supply DC2. The gate of the third NMOS transistor Q3 and the gate of the fourth NMOS transistor Q4, pin 6 of the second driver chip, and pin 7 of the second driver chip are connected to the tool electrode. The negative terminals of the low-voltage DC power supply DC1 and the high-voltage DC power supply DC2 are connected to the workpiece.

[0023] The source of the first NMOS transistor Q1 is connected to the source of the second NMOS transistor Q2, and the drain of the first NMOS transistor Q1 is connected to the drain of the second NMOS transistor Q2. The source of the third NMOS transistor Q3 is connected to the source of the fourth NMOS transistor Q4, and the drain of the third NMOS transistor Q3 is connected to the drain of the fourth NMOS transistor Q4, thus realizing a parallel connection of the NMOS transistors. Alternatively, the source of the first NMOS transistor Q1 is connected to the drain of the third NMOS transistor Q3, and the source of the second NMOS transistor Q2 is connected to the drain of the fourth NMOS transistor Q4, thus realizing a series connection. The negative terminals of low-voltage DC power supply DC1 and high-voltage DC power supply DC2 are connected to the workpiece. The positive terminal of low-voltage DC power supply DC1 is connected to the drain of the first NMOS transistor Q1 and the second NMOS transistor Q2. The positive terminal of high-voltage DC power supply DC2 is connected to the drain of the third NMOS transistor Q3 and the fourth NMOS transistor Q4. The sources of the first NMOS transistor Q1 / second NMOS transistor Q2 and the third NMOS transistor Q3 / fourth NMOS transistor Q4 are connected to the tool electrode to control the discharge of high-voltage DC power supply DC2 and low-voltage DC power supply DC1 in the discharge gap.

[0024] In a specific embodiment, the master microcontroller, the first slave microcontroller, and the second slave microcontroller all adopt the STC series microcontroller STC89C52.

[0025] In a specific embodiment, the first dual-ended RAM memory and the second dual-ended RAM memory use the DS1609 chip, and the first integrated frequency synthesizer and the second integrated frequency synthesizer use the AD9850 chip.

[0026] In a specific embodiment, such as Figure 3As shown, the high-voltage optocoupler isolation circuit and the low-voltage optocoupler isolation circuit use the 6N137 chip, and the high-voltage pulse drive circuit and the low-voltage pulse drive circuit use the UCC37322 chip. The high-speed optocoupler 6N137 chip is used to achieve electrical isolation between the pulse generation circuit and the power amplifier circuit. Combined with peripheral circuitry, it forms the optocoupler isolation circuit. The pulse signal generation circuit generates high and low voltage pulse control signals, which are respectively connected to the input terminals FB1 and FB2 of the optocoupler isolation circuit. The UCC37322 chip is used as the driver chip for the power amplifier circuit, and combined with peripheral circuitry, it forms the driver circuit. The pulse control signal output from the optocoupler isolation circuit is input to the driver circuit. The amplified high / low voltage pulse control signals are output from pin OUT2 of the second integrated frequency synthesizer and pin OUT1 of the first integrated frequency synthesizer, respectively, and connected to the MOSFET series-parallel module. Pin OUT1 of the first integrated frequency synthesizer is connected to the gate of the first NMOS transistor Q1 and the gate of the second NMOS transistor Q2 in the MOSFET series-parallel module. The drains of the first NMOS transistor Q1 and the second NMOS transistor Q2 are connected to the positive terminal of the low-voltage power supply to control its on / off state. The OUT2 of the second integrated frequency synthesizer is connected to the gates of the third NMOS transistor Q3 and the fourth NMOS transistor Q4 of the MOSFET series-parallel module. The drains of the third NMOS transistor Q3 and the fourth NMOS transistor Q4 are connected to the positive terminal of the high-voltage power supply to control its on / off state.

[0027] A novel high-low voltage composite electro-discharge pulse power supply processing method, such as... Figures 5 to 6 As shown, it includes: Step S1: After the tool electrode and the workpiece reach the breakdown distance, the gap voltage detection circuit and the gap current detection circuit of the gap detection module are used to collect the average gap voltage value and the average gap current value between the tool electrode and the workpiece. The average gap current value is converted by the gap current detection circuit to obtain the average gap current value converted voltage value. The gap voltage detection circuit of the gap detection module inputs the collected gap voltage value into the first comparator UA and the second comparator UB, and compares it with the open-circuit threshold voltage U1 and the short-circuit threshold voltage U2. The compared signal is fed back to the main control microcontroller. The gap current is collected by the Hall current sensor ACS712 in the gap current detection circuit, and the gap current detection circuit converts the current to voltage to obtain the average gap current value converted into a voltage value. The converted voltage value is input into the third comparator UC and compared with the preset threshold voltage U3. The compared signal is fed back to the main control microcontroller. The main control microcontroller controls the changes of the corresponding power supply parameters based on the comparison results of the gap voltage value and the average gap current value converted into a voltage value, thereby stabilizing the processing process.

[0028] Step S2: Compare the average gap voltage value with the open-circuit threshold voltage U1 and the short-circuit threshold voltage U2; compare the average gap current value with the preset threshold voltage U3. If the average gap voltage is less than the open-circuit threshold voltage U1 and greater than the short-circuit threshold voltage U2, and the average gap current converted to voltage is greater than the preset threshold voltage U3, then the normal EDM processing state is reached, and step S3 is executed; otherwise, step S1 is executed. Step S3: The main control microcontroller of the signal generation module uses the high-voltage pulse generation circuit and the low-voltage pulse generation circuit to control the power supply parameters, thereby controlling the signal generation module to output a frequency-modulated pulse signal. The power amplifier circuit module controls the driving power of the frequency-modulated pulse signal, performs steady-state adjustment on the input and output of the frequency-modulated pulse signal, and transmits the frequency-modulated pulse signal after steady-state adjustment to the MOSFET series-parallel module. Step S4: Control the high-voltage power switch and low-voltage power switch of the MOSFET series-parallel module to turn on and off by using the input and output steady-state adjusted frequency modulation pulse signals, so that the high and low voltage power supplies are loaded into the gap to complete the discharge. After the discharge is completed, the next discharge cycle begins.

[0029] Step S5: Repeat steps S1 to S4 above to achieve continuous processing of the workpiece.

[0030] like Figure 7 As shown, the discharge cycle of the novel high-low voltage composite EDM pulse power supply provided by this invention is T. The period from 0 to t1 is the inter-pulse phase, during which no processing occurs. At t1, the low-voltage pulse circuit is applied to the discharge gap, breaking down the gap and forming a discharge channel, which melts the particle-reinforced metal matrix composite material. At t2, the low-voltage pulse circuit ends, and the high-voltage pulse circuit is immediately applied to the discharge gap. Relying on the large discharge explosive force, the reinforcing particles are directly ejected in solid form along with the molten metal. At t3, the high-voltage pulse circuit ends, marking the end of one discharge cycle of the power supply. This process is then repeated.

[0031] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A novel high-low voltage composite electro-discharge machining pulse power supply, characterized in that, It includes a signal generation module, a power amplifier circuit module, a MOSFET series-parallel module, and a gap detection module; The gap detection module is used to detect the gap distance between the workpiece and the tool electrode, generate a gap signal, and feed the gap signal back to the signal generation module. The signal generation module controls the explosion power parameters in real time based on the gap signal to generate a frequency-modulated pulse signal, and transmits the frequency-modulated pulse signal to the power amplifier circuit module. The gap detection module includes a gap voltage detection circuit and a gap current detection circuit; The gap voltage detection circuit includes a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a seventh capacitor C7, a first comparator UA, a twelfth resistor R12, an eighth capacitor C8, a thirteenth resistor R13, a second comparator UB, and a ninth capacitor C9. The tool electrode is connected to one end of the ninth resistor R9. The other end of the ninth resistor R9 is connected to one end of the tenth resistor R10, one end of the seventh capacitor C7, and the negative input terminal of the first comparator UA. The other end of the tenth resistor R10 is connected to the other end of the seventh capacitor C7 and one end of the eleventh resistor R11. The other end of the eleventh resistor R11 is connected to the workpiece. The positive input terminal of the first comparator UA is connected to the open-circuit threshold voltage U1. Pin 1 of the first comparator UA is connected to one end of the twelfth resistor R12 and pin VCC5. Pin 2 of the first comparator UA is connected to one end of the eighth capacitor C8. The other end of the eighth capacitor C8 is grounded. The other end of the twelfth resistor R12 is connected to the anode of the first diode D1, the cathode of the second diode D2, and the first... The output pin OUT3 of comparator UA is connected to the first comparator UA. The cathode of the first diode D1 is connected to the VCC9 pin. The anode of the second diode D2 is connected to the other end of the eighth capacitor C8. The output pin OUT3 of the first comparator UA is connected to the main control microcontroller of the signal generation module. The negative input terminal of the second comparator UB is connected to the negative input terminal of the first comparator UA. The positive input terminal of the second comparator UB is connected to the short-circuit threshold voltage U2. Pin 1 of the second comparator UB is connected to one end of the thirteenth resistor R13 and pin VCC6. Pin 2 of the second comparator UB is connected to one end of the ninth capacitor C9. The other end of the ninth capacitor C9 is grounded. The other end of the thirteenth resistor R13 is connected to the anode of the third diode D3, the cathode of the fourth diode D4, and the output pin OUT4 of the second comparator UB. The cathode of the third diode D3 is connected to the VCC10 pin. The anode of the fourth diode D4 is connected to the other end of the ninth capacitor C9. The output pin OUT4 of the second comparator UB is connected to the main control microcontroller of the signal generation module. The gap current detection circuit includes an ACS712 chip, a fourteenth resistor R14, a tenth capacitor C10, a fifteenth resistor R15, a third comparator UC, and an eleventh capacitor C11. The tool electrode is connected to pin 1 and pin 2 of the ACS712 chip. Pins 3 and 4 of the ACS712 chip are connected to the workpiece. Pin 8 of the ACS712 chip is connected to pin VCC7. Pin 5 of the ACS712 chip is grounded. Pin 7 of the ACS712 chip is connected to one end of the fourteenth resistor R14. The other end of the fourteenth resistor R14 is connected to one end of the tenth capacitor C10 and the negative input terminal of the third comparator UC. The tenth capacitor C10... The other end is grounded. The positive input terminal of the third comparator UC is connected to a preset threshold voltage U3. Pin 1 of the third comparator UC is connected to one end of the fifteenth resistor R15 and pin VCC8. Pin 2 of the third comparator UC is connected to one end of the eleventh capacitor C11. The other end of the eleventh capacitor C11 is grounded. The other end of the fifteenth resistor R15 is connected to the anode of the fifth diode D5, the cathode of the sixth diode D6, and the output pin OUT5 of the third comparator UC. The cathode of the fifth diode D5 is connected to pin VCC11. The anode of the sixth diode D6 is connected to the other end of the eleventh capacitor C11. The output pin OUT5 of the third comparator UC is connected to the main control microcontroller of the signal generation module. The power amplifier circuit module controls the driving power of the frequency modulation pulse signal, performs steady-state adjustment on the input and output of the frequency modulation pulse signal, and transmits the frequency modulation pulse signal after steady-state adjustment to the MOSFET series-parallel module. The MOSFET series-parallel module controls the high-voltage power switch and low-voltage power switch of the MOSFET series-parallel module to turn on and off according to the frequency modulation pulse signal after steady-state adjustment of the input and output, thereby controlling the high-voltage power supply and low-voltage power supply to be applied to the gap between the workpiece and the tool electrode for discharge.

2. The novel high-low voltage composite electro-discharge pulse power supply according to claim 1, characterized in that, The signal generation module includes a main control microcontroller, a high-voltage pulse generation circuit, and a low-voltage pulse generation circuit. The main control microcontroller is connected to the high-voltage pulse generation circuit and the low-voltage pulse generation circuit, respectively. The low-voltage pulse generating circuit includes a first dual-ended RAM memory, a first slave microcontroller, and a first integrated frequency synthesizer; the high-voltage pulse generating circuit includes a second dual-ended RAM memory, a second slave microcontroller, and a second integrated frequency synthesizer. The master microcontroller, the first slave microcontroller, and the second slave microcontroller all use the STC series microcontroller STC89C52; the first dual-ended RAM memory and the second dual-ended RAM memory use the DS1609 chip, and the first integrated frequency synthesizer and the second integrated frequency synthesizer use the AD9850 chip. The pins P0.0, P0.1, P0.2, P0.3, P0.4, P0.5, P0.6, P0.7, WR, PSEN, and RD of the main control microcontroller are sequentially connected to the pins AD0, AD1, AD2, AD3, AD4, AD5, AD6, AD7, WEA, CEA, and OEA of the first and second dual-ended RAM memories, respectively. The pins BD0, BD1, BD2, BD3, BD4, BD5, BD6, BD7, WEB, CEB, and OEB of the first dual-ended RAM memory are sequentially connected to the pins AD0, AD1, AD2, AD3, AD4, AD5, AD6, AD7, WEB, CEA, and OEA of the second dual-ended RAM memory, respectively. A slave microcontroller is connected to pins P0.0, P0.1, P0.2, P0.3, P0.4, P0.5, P0.6, P0.7, WR, ALE, and RD. Pins P2.0, P2.1, P2.2, P2.3, P2.4, P2.5, P2.6, P2.7, P1.4, P1.5, P1.6, and P1.7 of the slave microcontroller are sequentially connected to pins D0, D1, D2, D3, D4, D5, D6, D7, RESET, DATA, FQ_UD, and W_CLK of the integrated frequency synthesizer. The pins BD0, BD1, BD2, BD3, BD4, BD5, BD6, BD7, WEB, CEB, and OEB of the second dual-ended RAM memory are sequentially connected to the pins P0.0, P0.1, P0.2, P0.3, P0.4, P0.5, P0.6, P0.7, WR, ALE, and RD of the second slave microcontroller. The pins P2.0, P2.1, P2.2, and OEB of the second slave microcontroller are also connected to these pins. Pins P2.3, P2.4, P2.5, P2.6, P2.7, P1.4, P1.5, P1.6, and P1.7 are connected sequentially to pins D0, D1, D2, D3, D4, D5, D6, D7, RESET, DATA, FQ_UD, and W_CLK of the second integrated frequency synthesizer. Pin OUT1 of the first integrated frequency synthesizer and pin OUT2 of the second integrated frequency synthesizer are connected to the power amplifier circuit module.

3. The novel high-low voltage composite electro-discharge pulse power supply according to claim 2, characterized in that, The power amplifier circuit module includes a high-voltage power amplifier circuit and a low-voltage power amplifier circuit. The low-voltage power amplifier circuit includes a low-voltage optocoupler isolation circuit and a low-voltage pulse drive circuit. The high-voltage power amplifier circuit includes a high-voltage optocoupler isolation circuit and a high-voltage pulse drive circuit. The high-voltage optocoupler isolation circuit and the low-voltage optocoupler isolation circuit use the 6N137 chip, and the high-voltage pulse drive circuit and the low-voltage pulse drive circuit use the UCC37322 chip. The low-voltage optocoupler isolation circuit includes a first resistor R1, a second resistor R2, a first optocoupler chip, a third resistor R3, and a first capacitor C1; the low-voltage pulse driving circuit includes a fourth resistor R4, a second capacitor C2, a third capacitor C3, and a first driving chip; one end of the first resistor R1 is connected to pin OUT1 of the first integrated frequency synthesizer, and the other end of the first resistor R1 is connected to pin 2 of the first optocoupler chip; pin 7 of the first optocoupler chip is connected to pin 8 of the first optocoupler chip, one end of the first capacitor C1, one end of the third resistor R3, and pin VCC1; one end of the second resistor R2 is connected to pin 3 of the first optocoupler chip, and pin 5 of the first optocoupler chip... The other end of the second resistor R2 and the other end of the first capacitor C1 are connected to and grounded. Pin 6 of the first optocoupler chip is connected to the other end of the third resistor R3, pin 2 of the first driver chip, and one end of the fourth resistor R4. The other end of the fourth resistor R4 is connected to pin 4 and pin 5 of the first driver chip, one end of the second capacitor C2, and one end of the third capacitor C3 and grounded. The other end of the second capacitor C2 is connected to the other end of the third capacitor C3, pin 1 and pin 8 of the first driver chip, and pin VCC2. Pin 6 of the first driver chip is connected to pin 7 of the first driver chip and connected to the MOSFET series-parallel module. The high-voltage optocoupler isolation circuit includes a fifth resistor R5, a sixth resistor R6, a second optocoupler chip, a seventh resistor R7, and a fourth capacitor C4; the high-voltage pulse drive circuit includes an eighth resistor R8, a fifth capacitor C5, a sixth capacitor C6, and a second drive chip; one end of the fifth resistor R5 is connected to pin OUT2 of the second integrated frequency synthesizer, and the other end of the fifth resistor R5 is connected to pin 2 of the second optocoupler chip; pins 7 and 8 of the second optocoupler chip, one end of the fourth capacitor C4, and one end of the seventh resistor R7 are connected to pin VCC3; one end of the sixth resistor R6 is connected to pin 3 of the second optocoupler chip; and pins 5 and 6 of the second optocoupler chip are connected to pins 8 and 8 respectively. The other end of the sixth resistor R6 and the other end of the fourth capacitor C4 are connected to ground. Pin 6 of the second optocoupler chip is connected to the other end of the seventh resistor R7, pin 2 of the second driver chip, and one end of the eighth resistor R8. The other end of the eighth resistor R8 is connected to pin 4 and pin 5 of the second driver chip, one end of the fifth capacitor C5, and one end of the sixth capacitor C6 and grounded. The other end of the fifth capacitor C5 is connected to the other end of the sixth capacitor C6, pin 1 and pin 8 of the second driver chip, and pin VCC4. Pin 6 of the second driver chip is connected to pin 7 of the second driver chip and connected to the MOSFET series-parallel module.

4. A processing method for a novel high-low voltage composite electric spark detonation pulse power supply, based on the novel high-low voltage composite electric spark detonation pulse power supply according to any one of claims 1-3, characterized in that, include: Step S1: After the tool electrode and the workpiece reach the breakdown distance, the gap voltage detection circuit and the gap current detection circuit of the gap detection module are used to collect the average gap voltage value and the average gap current value between the tool electrode and the workpiece. The average gap current value is converted by the gap current detection circuit to obtain the average gap current value converted voltage value. Step S2: Compare the average gap voltage value with the open-circuit threshold voltage U1 and the short-circuit threshold voltage U2; compare the average gap current value with the preset threshold voltage U3. If the average gap voltage is less than the open-circuit threshold voltage U1 and greater than the short-circuit threshold voltage U2, and the average gap current converted to voltage is greater than the preset threshold voltage U3, then the normal EDM processing state is reached, and step S3 is executed; otherwise, step S1 is executed. Step S3: The main control microcontroller of the signal generation module uses the high-voltage pulse generation circuit and the low-voltage pulse generation circuit to control the power supply parameters, thereby controlling the signal generation module to output a frequency-modulated pulse signal. The power amplifier circuit module controls the driving power of the frequency-modulated pulse signal, performs steady-state adjustment on the input and output of the frequency-modulated pulse signal, and transmits the frequency-modulated pulse signal after steady-state adjustment to the MOSFET series-parallel module. Step S4: By inputting and outputting the frequency modulation pulse signal after steady-state adjustment, control the high voltage power switch and low voltage power switch of the MOSFET series-parallel module to turn on and off, so that the high and low voltage power supplies are loaded into the gap to complete the discharge. After the discharge is completed, the next discharge cycle begins. Step S5: Repeat steps S1 to S4 above to achieve continuous processing of the workpiece.

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