Method for manufacturing a vibrating element

Abstract

Method for manufacturing a vibration element. The outer shape and the groove can be formed at the same time. The method for manufacturing a vibration element includes: a first base film forming step of forming a first base film in a first vibration arm formation region and a second vibration arm formation region in a first substrate surface of a quartz substrate; a first protective film forming step of forming a first protective film in a first dam formation region of the first base film; a first dry etching step of dry etching the quartz substrate through the first base film and the first protective film; a second base film forming step of forming a second base film in the first vibration arm formation region and the second vibration arm formation region in a second substrate surface of the quartz substrate; a second protective film forming step of forming a second protective film in a second dam formation region of the second base film; and a second dry etching step of dry etching the quartz substrate through the second base film and the second protective film.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a vibrating element. Background Technology

[0002] Patent Document 1 describes a method for forming a tuning fork-type oscillator by wet etching and dry etching, wherein the tuning fork-type oscillator has a bottomed groove on the vibrating arm. In this manufacturing method, the shape of the tuning fork-type oscillator is formed by wet etching of a quartz substrate, and then the groove is formed by dry etching.

[0003] Patent Document 2 describes a method for forming a tuning fork-type oscillator by dry etching, wherein the tuning fork-type oscillator has a bottomed groove on the vibrating arm. In this manufacturing method, when dry etching a substrate made of piezoelectric material, the width of the groove is narrowed relative to the width between a pair of vibrating arms, thereby utilizing the micro-load effect to make the etching depth of the groove shallower relative to the etching depth between a pair of vibrating arms, thus forming the groove and the outer shape of the oscillator.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2013-175933

[0005] Patent Document 2: Japanese Patent Application Publication No. 2007-013382

[0006] In the manufacturing method of Patent Document 1, the wet etching for forming the shape and the dry etching for forming the groove are different processes. Therefore, the manufacturing process is complex and prone to problems such as misalignment of the groove relative to the shape. Consequently, the vibration element based on this manufacturing method is prone to generating unwanted vibrations.

[0007] On the other hand, in the manufacturing method of Patent Document 2, the shape and groove are formed in the same process, so the above-mentioned problems do not occur. However, in this manufacturing method, the shape and groove are formed in the same process using the micro-load effect in dry etching, so the setting of dimensions such as the width of the vibrating arm and the width and depth of the groove is restricted, resulting in a low degree of design freedom.

[0008] Therefore, a manufacturing method is required that can simultaneously form the shape and groove of the vibrating element and has a high degree of design freedom. Summary of the Invention

[0009] In the manufacturing method of the vibration element of the present invention, the vibration element has a first vibration arm and a second vibration arm extending along a first direction and arranged along a second direction intersecting the first direction. The first vibration arm and the second vibration arm each have a first surface and a second surface, a first groove with a bottom opening on the first surface and a second groove with a bottom opening on the second surface, and the first surface and the second surface are arranged in a positive-negative relationship in a third direction intersecting the first direction and the second direction. The manufacturing method includes: a preparation step, preparing a quartz substrate having a first substrate surface and a second substrate surface in a positive-negative relationship; a first base film forming step, forming a first base film in the first substrate surface of the first vibration arm forming region forming the first vibration arm and the second vibration arm forming region forming the second vibration arm; and a first protective film forming step, forming a first base film in the first substrate surface of the first substrate surface of the first vibration arm forming region forming the first vibration arm and the second vibration arm forming region forming the second vibration arm; and a first protective film forming step, forming a first base film in the first substrate surface of the first substrate surface of the first vibration arm forming region forming the first vibration arm and the second vibration arm forming region forming the second vibration arm forming the second vibration arm forming the second vibration arm forming region forming the first vibration arm; and a first protective film forming step, forming a first base film in the first substrate surface of the first substrate surface of the second vibration arm forming region forming the first vibration arm forming region forming the second vibration arm forming region forming the second vibration arm forming region forming the second vibration arm forming region forming the first vibration arm forming region. A first protective film is formed in the area of ​​the base film other than the area where the first trench is formed; a first dry etching process is performed, in which the quartz substrate is dry-etched from the surface side of the first substrate through the first base film and the first protective film to form the outline of the first surface, the first trench, the first vibrating arm and the second vibrating arm; a second base film forming process is performed, in which the first vibrating arm forming area and the second vibrating arm forming area in the surface of the second substrate are formed; a second protective film forming process is performed, in which the second protective film is formed in the area of ​​the second base film other than the area where the second trench is formed; and a second dry etching process is performed, in which the quartz substrate is dry-etched from the surface side of the second substrate through the second base film and the second protective film to form the outline of the second surface, the second trench, the first vibrating arm and the second vibrating arm. Attached Figure Description

[0010] Figure 1 This is a top view showing the vibrating element of Embodiment 1.

[0011] Figure 2 yes Figure 1 Sectional view along line A1-A1 in the diagram.

[0012] Figure 3 This is a diagram illustrating the manufacturing process of the vibration element according to Embodiment 1.

[0013] Figure 4 This is a diagram illustrating the manufacturing process of the vibration element according to Embodiment 1.

[0014] Figure 5 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0015] Figure 6 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0016] Figure 7It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0017] Figure 8 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0018] Figure 9 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0019] Figure 10 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0020] Figure 11 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0021] Figure 12 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0022] Figure 13 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0023] Figure 14 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0024] Figure 15 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0025] Figure 16 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0026] Figure 17 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0027] Figure 18 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0028] Figure 19 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0029] Figure 20 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0030] Figure 21 This is a cross-sectional view used to illustrate the manufacturing method of the vibration element in Embodiment 2.

[0031] Figure 22 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0032] Figure 23 This is a cross-sectional view used to illustrate the manufacturing method of the vibration element in Embodiment 3.

[0033] Figure 24It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0034] Figure 25 It is a cross-sectional view used to illustrate the manufacturing method of a vibrating element.

[0035] Figure 26 This is a top view showing a modified example of the vibrating element.

[0036] Figure 27 yes Figure 26 Sectional view along line A3-A3 in the diagram.

[0037] Figure 28 This is a top view showing a modified example of the vibrating element.

[0038] Figure 29 yes Figure 28 Sectional view along line A4-A4 in the diagram.

[0039] Figure 30 yes Figure 28 Sectional view along line A5-A5.

[0040] Figure 31 This is a top view showing a modified example of the vibrating element.

[0041] Figure 32 yes Figure 31 Sectional view along line A6-A6 in the diagram.

[0042] Figure 33 yes Figure 31 Sectional view along line A7-A7 in the diagram.

[0043] Label Explanation

[0044] 1. Vibrating element; 2. Vibrating substrate; 2A. First surface; 2B. Second surface; 3. Electrode; 20. Quartz substrate; 20A. First substrate surface; 20B. Second substrate surface; 21. Base; 22. First vibrating arm; 23. Second vibrating arm; 31. Signal electrode; 32. Ground electrode; 51. First bottom film; 53. First protective film; 61. Second bottom film; 63. Second protective film; 221, 231. First groove; 222, 232. Second groove; 225, 235. First embankment; 226, 236. Second embankment; 512. First metal film; 513. Second metal film; 612. Third metal film; 613. Fourth metal film; Q1. First groove forming area; Q2. First vibrating arm forming area; Q3. Second vibrating arm forming area; Q4. Inter-arm area; Q5. Inter-element area; Q6. Second groove forming area Domain; Qd1 First embankment formation area; Qd2 Second embankment formation area; R1 First resist film; R2 Second resist film; R4 Fourth resist film; S1 Preparation process; S2 First base film formation process; S3 First protective film formation process; S4 First dry etching process; S5 First base film removal process; S6 Second base film formation process; S7 Second protective film formation process; S8 Second dry etching process; S9 Second base film removal process; S10 Electrode formation process; S21 First base film coating process; S22 First base film patterning process; S31 First protective film coating process; S32 First protective film patterning process; S61 Second base film coating process; S62 Second base film patterning process; S71 Second protective film coating process; S72 Second protective film patterning process. Detailed Implementation

[0045] 1. Implementation Method 1

[0046] The manufacturing method of the vibration element 1 in Embodiment 1 will be described.

[0047] First, refer to Figure 1 and Figure 2 The structure of vibrating element 1 will be explained. Next, refer to... Figures 3 to 20 The manufacturing method of vibration element 1 is explained.

[0048] For ease of explanation, except Figure 3 and Figure 4 In the figures other than those shown, the X-axis, Y-axis, and Z-axis are shown as three mutually orthogonal axes. Furthermore, the direction along the X-axis, which is considered the second direction, is also called the X-direction; the direction along the Y-axis, which is considered the first direction, is also called the Y-direction; and the direction along the Z-axis, which is considered the third direction, is also called the Z-direction. Additionally, the arrow side of each axis is also called the positive side, and the opposite side is also called the negative side. Furthermore, the positive side of the Z-direction is also called "up," and the negative side is also called "down." Additionally, the view from the Z-direction is simply referred to as "top view." Furthermore, as described later, the X-axis, Y-axis, and Z-axis correspond to the crystal axes of quartz.

[0049] like Figure 1 and Figure 2 As shown, the vibrating element 1 is a tuning fork type vibrating element, having a vibrating substrate 2 and electrodes 3 formed on the surface of the vibrating substrate 2.

[0050] The vibrating substrate 2 is formed by patterning a Z-cut quartz substrate, which is a Z-cut quartz plate, into a desired shape. It extends along the XY plane, defined by the X-axis and Y-axis, which are the axes of the quartz crystal, and has a thickness along the Z-direction. The X-axis is also called the electrical axis, the Y-axis is also called the mechanical axis, and the Z-axis is also called the optical axis. In addition, the thickness along the Z-direction is also simply referred to as "thickness".

[0051] The vibrating substrate 2 is plate-shaped and has a first surface 2A and a second surface 2B arranged opposite each other along the Z direction. Furthermore, the vibrating substrate 2 has a base 21 and a first vibrating arm 22 and a second vibrating arm 23 extending from the base 21 along the Y direction and arranged along the X direction.

[0052] The first vibrating arm 22 has: a first groove 221 with a bottom that opens on a first surface 2A; a first embankment 225 that defines the first groove 221; a second groove 222 with a bottom that opens on a second surface 2B; a second embankment 226 that defines the second groove 222; and a side surface 101 connecting the first surface 2A and the second surface 2B. The first embankment 225 is a portion arranged along the X direction on the first surface 2A, separated by the first groove 221, when viewed from above. The second embankment 226 is a portion arranged along the X direction on the second surface 2B, separated by the second groove 222, when viewed from above.

[0053] Similarly, the second vibrating arm 23 has: a first groove 231 with a bottom opening on the first surface 2A; a first embankment 235 defining the first groove 231; a second groove 232 with a bottom opening on the second surface 2B; a second embankment 236 defining the second groove 232; and a side surface 103 connecting the first surface 2A and the second surface 2B. The first embankment 235 is the portion arranged along the X direction on the first surface 2A, separated by the first groove 231, when viewed from above. The second embankment 236 is the portion arranged along the X direction on the second surface 2B, separated by the second groove 232, when viewed from above.

[0054] The first grooves 221 and 231 and the second grooves 222 and 232 extend along the Y direction. Furthermore, the first embankments 225 and 235 are formed on both sides of the first grooves 221 and 231 in the X direction and extend along the Y direction. The second embankments 226 and 236 are formed on both sides of the second grooves 222 and 232 in the X direction and extend along the Y direction. Therefore, the first vibrating arm 22 and the second vibrating arm 23 each have a generally H-shaped cross-sectional shape. This results in a vibrating element 1 that reduces thermoelastic losses and possesses excellent vibration characteristics.

[0055] Electrode 3 has a signal electrode 31 and a ground electrode 32. The signal electrode 31 is disposed on the first surface 2A and the second surface 2B of the first vibrating arm 22 and on the side surface 103 of the second vibrating arm 23. Conversely, the ground electrode 32 is disposed on the side surface 101 of the first vibrating arm 22 and on the first surface 2A and the second surface 2B of the second vibrating arm 23. When a drive signal is applied to the signal electrode 31 with the ground electrode 32 grounded, as... Figure 1 As indicated by the arrows, the first vibrating arm 22 and the second vibrating arm 23 undergo bending vibration in the X direction by repeatedly approaching and separating.

[0056] The above provides a brief description of the vibrating element 1.

[0057] Next, the manufacturing method of the vibrating element 1 will be described. For example... Figure 3 and Figure 4 As shown, the manufacturing method of the vibrating element 1 includes: a preparation step S1, preparing a quartz substrate 20 as the parent material for the vibrating substrate 2; a first base film formation step S2, forming a first base film 51 in a predetermined area of ​​the first substrate surface 20A of the quartz substrate 20; a first protective film formation step S3, forming a first protective film 53 in a predetermined area of ​​the first base film 51; a first dry etching step S4, dry etching the quartz substrate 20 from the first substrate surface 20A side through the first base film 51 and the first protective film 53; and a first base film removal step S5, removing the first base film remaining on the first substrate surface 20A of the quartz substrate 20. The process includes: film 51; second bottom film formation step S6, forming a second bottom film 61 in a predetermined area of ​​the second substrate surface 20B of the quartz substrate 20; second protective film formation step S7, forming a second protective film 63 in a predetermined area of ​​the second bottom film 61; second dry etching step S8, dry etching the quartz substrate 20 from the second substrate surface 20B side with the second bottom film 61 and the second protective film 63 in between; second bottom film removal step S9, removing the second bottom film 61 remaining on the second substrate surface 20B of the quartz substrate 20; and electrode formation step S10, forming an electrode 3 on the surface of the vibrating substrate 2 obtained by the above steps.

[0058] Furthermore, the first base film forming process S2 includes: a first base film coating process S21, covering the first substrate surface 20A of the quartz substrate 20 with the first base film 51; and a first base film patterning process S22, patterning the first base film 51. Additionally, the first protective film forming process S3 includes: a first protective film coating process S31, covering the first base film 51 with the first protective film 53; and a first protective film patterning process S32, patterning the first protective film 53.

[0059] Furthermore, the second substrate film formation process S6 includes: a second substrate film coating process S61, which covers the second substrate surface 20B of the quartz substrate 20 with the second substrate film 61; and a second substrate film patterning process S62, which patterns the second substrate film 61. Additionally, the second protective film formation process S7 includes: a second protective film coating process S71, which covers the second substrate film 61 with the second protective film 63; and a second protective film patterning process S72, which patterns the second protective film 63.

[0060] The following sections will explain each of these processes in turn.

[0061] <<Preparation Process S1>>

[0062] like Figure 5 As shown, a quartz substrate 20 is prepared as the base material for the vibrating substrate 2. Multiple vibrating elements 1 are formed together from the quartz substrate 20. The quartz substrate 20 is plate-shaped and has a first substrate surface 20A and a second substrate surface 20B arranged opposite each other in the Z direction. Through grinding or polishing processes, the quartz substrate 20 is adjusted to a desired thickness, and the first substrate surface 20A and the second substrate surface 20B are sufficiently smoothed. Alternatively, a wet etching-based surface treatment can be performed on the quartz substrate 20 as needed.

[0063] Hereinafter, the region where the first vibrating arm 22 is formed by the first dry etching process S4 and the second dry etching process S8 (described later) will also be referred to as the first vibrating arm forming region Q2. Similarly, the region where the second vibrating arm 23 is formed by the first dry etching process S4 and the second dry etching process S8 will also be referred to as the second vibrating arm forming region Q3. Furthermore, the region located between the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 will also be referred to as the inter-arm region Q4. Additionally, the region located between adjacent vibrating substrates 2 will also be referred to as the inter-element region Q5.

[0064] The first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 have a first groove forming region Q1 that forms the first grooves 221 and 231, and a first embankment forming region Qd1 that forms the first embankments 225 and 235. In other words, the first embankment forming region Qd1 corresponds to the region in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 other than the first groove forming region Q1. The first grooves 221 and 231 and the first embankments 225 and 235 are formed by the first dry etching process S4.

[0065] Furthermore, the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 have a second trench forming region Q6, which forms the second trenches 222 and 232, and a second embankment forming region Qd2, which forms the second embankments 226 and 236, through the second dry etching process S8. In other words, the second embankment forming region Qd2 corresponds to the region in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 other than the second trench forming region Q6. The second trenches 222 and 232 and the second embankments 226 and 236 are formed through the second dry etching process S8.

[0066] <<First Base Film Coating Process S21>>

[0067] like Figure 6 As shown, the first substrate surface 20A of the quartz substrate 20 is covered by the first base film 51. The first base film 51 is formed of a material etched at a predetermined etching rate in the first dry etching process S4 described later.

[0068] In this embodiment, the first base film 51 is a metal film formed of metal. Specifically, the first base film 51 is formed by stacking a first metal film 512 and a second metal film 513. The first metal film 512 is formed on the first substrate surface 20A of the quartz substrate 20. The second metal film 513 is formed on the side of the first metal film 512 opposite to the quartz substrate 20. The side of the first metal film 512 opposite to the quartz substrate 20 is the positive side of the first metal film 512 in the Z direction. The first metal film 512 is formed of chromium (Cr). The second metal film 513 is formed of copper (Cu).

[0069] In this embodiment, the first base film 51 is formed by stacking the first metal film 512 and the second metal film 513, but it is not limited to this. It can also be formed by one film or by stacking three or more films.

[0070] Alternatively, the first substrate 51 may also be formed of a material other than metal. For example, the first substrate 51 may also be a resist film formed of a resist material.

[0071] <<First Protective Film Coating Process S31>>

[0072] like Figure 7 As shown, a first protective film 53 covers a first base film 51. The first protective film 53 is formed on the side of the first base film 51 opposite to the quartz substrate 20. The side of the first base film 51 opposite to the quartz substrate 20 is the positive side of the first base film 51 in the Z direction. The first protective film 53 is formed from a material etched at a predetermined etching rate in the first dry etching process S4 described later.

[0073] In this embodiment, the first protective film 53 is a metal film formed of metal. For example, nickel (Ni) can be used as the metal forming the first protective film 53. Alternatively, the first protective film 53 can also be formed of a material other than metal. For example, the first protective film 53 can also be a resist film formed of a resist material.

[0074] <<First Protective Film Patterning Process S32>>

[0075] First, such as Figure 8 As shown, a first resist film R1 is formed on the side of the first protective film 53 opposite to the quartz substrate 20. This side of the first protective film 53 opposite to the quartz substrate 20 is the positive side of the first protective film 53 in the Z direction. The first resist film R1 is formed in the first embankment formation region Qd1 using photolithography. That is, the first resist film R1 overlaps with the first embankment formation region Qd1 when viewed from above.

[0076] Next, the first protective film 53 is etched from the side where the first resist film R1 is formed. That is, the first protective film 53 is etched from the side of the first protective film 53 on the positive side in the Z direction, using the first resist film R1 as a mask. As a result, the first protective film 53 in the first trench forming region Q1, the inter-arm region Q4, and the inter-element region Q5 where the first resist film R1 is not formed is removed.

[0077] Thus, as Figure 9 As shown, a first protective membrane 53 can be formed in the first embankment forming region Qd1, which is a defined area in the first base membrane 51.

[0078] Next, as Figure 10 As shown, the first resist film R1 is removed, and the process is transferred to the first substrate patterning step S22.

[0079] <<First Base Film Patterning Process S22>>

[0080] The first substrate patterning process S22 includes: forming a second resist film R2 in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3; and etching the first substrate film 51 using the second resist film R2 as a mask.

[0081] First, such as Figure 11 As shown, using photolithography, a second resist film R2 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 on the surface of the first base film 51 opposite to the quartz substrate 20.

[0082] In this embodiment, before the first base film patterning process S22, the first protective film coating process S31 and the first protective film patterning process S32 are performed, and a first protective film 53 is formed in the first embankment forming region Qd1 in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3. Therefore, the second resist film R2 is formed in the first embankment forming region Qd1, separated by the first protective film 53, on the side of the first base film 51 opposite to the quartz substrate 20. Furthermore, the second resist film R2 is formed in the first groove forming region Q1 in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3, without being separated by the first protective film 53, on the side of the first base film 51 opposite to the quartz substrate 20.

[0083] Next, the first substrate 51 is etched from the side where the second resist film R2 is formed. That is, the first substrate 51 is etched from the positive side of the Z direction of the first substrate 51 using the second resist film R2 as a mask.

[0084] In this embodiment, the process of etching the first base film 51 using the second resist film R2 as a mask includes: etching the first metal film 512 of the first base film 51; and etching the second metal film 513 of the first base film 51. In the first base film patterning process S22, firstly, the second metal film 513 formed on the side of the first metal film 512 opposite to the quartz substrate 20 is etched, and then the first metal film 512 is etched. In this way, the first base film 51 formed by stacking the first metal film 512 and the second metal film 513 can be etched.

[0085] Since a second resist film R2 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3, the first base film 51 in the inter-arm region Q4 and the inter-element region Q5, where the second resist film R2 is not formed, is removed in the first base film patterning process S22.

[0086] Thus, as Figure 12 As shown, a first base film 51 is formed in a first vibration arm forming region Q2 and a second vibration arm forming region Q3, which are defined regions in the first substrate surface 20A of the quartz substrate 20.

[0087] That is, through the first base film forming process S2, which includes the first base film coating process S21 and the first base film patterning process S22, the first base film 51 is formed in the first substrate surface 20A of the quartz substrate 20, in the first vibrating arm forming region Q2 where the first vibrating arm 22 is formed and the second vibrating arm forming region Q3 where the second vibrating arm 23 is formed.

[0088] Furthermore, through the first protective film forming process S3, which includes the first protective film coating process S31 and the first protective film patterning process S32, the first protective film 53 is formed in the first vibrating arm forming region Qd1, which is the region other than the first groove forming region Q1, in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 where the first base film 51 is formed.

[0089] In this embodiment, the first base film coating process S21, the first base film patterning process S22, the first protective film coating process S31, and the first protective film patterning process S32 are performed in the following order: first base film coating process S21, first protective film coating process S31, first protective film patterning process S32, and first base film patterning process S22. However, the order in which the first base film coating process S21, the first base film patterning process S22, the first protective film coating process S31, and the first protective film patterning process S32 are performed is not limited to this. For example, the process can be carried out in the order of the first base film coating process S21, the first base film patterning process S22, the first protective film coating process S31, and the first protective film patterning process S32, or in the order of the first base film coating process S21, the first protective film coating process S31, the first base film patterning process S22, and the first protective film patterning process S32.

[0090] Next, as Figure 13 As shown, the second resist film R2 is removed, and the process is transferred to the first dry etching step S4.

[0091] <<First Dry Etching Process S4>>

[0092] like Figure 14 As shown, the quartz substrate 20 is dry etched from the first substrate surface 20A side through the first base film 51 and the first protective film 53, simultaneously forming the shape of the first surface 2A, the first grooves 221 and 231, and the vibrating substrate 2. Furthermore, "simultaneous formation" means forming both in one process. More specifically, this process is reactive ion etching, performed using a reactive ion etching apparatus (RIE apparatus). Additionally, there are no particular limitations on the reactive gas introduced into the RIE apparatus; for example, SF6, CF4, C2F4, C2F6, C3F6, C4F8, etc., can be used.

[0093] In the first dry etching process S4, the first base film 51 and the first protective film 53 formed on the first substrate surface 20A of the quartz substrate 20 are etched at a predetermined etching rate. Therefore, the etching depth of the quartz substrate 20 in the region where the first substrate surface 20A is exposed without the formation of the first base film 51 and the first protective film 53, the region where the first base film 51 is formed, and the region where the first base film 51 and the first protective film 53 are formed can be controlled by the first base film 51 and the first protective film 53.

[0094] In this embodiment, the first base film 51 and the first protective film 53 are not formed in the inter-arm region Q4 and inter-element region Q5 of the first substrate surface 20A of the quartz substrate 20. That is, the first substrate surface 20A of the quartz substrate 20 is exposed in the inter-arm region Q4 and inter-element region Q5. Therefore, etching of the quartz substrate 20 begins simultaneously with the start of the first dry etching process S4 in the inter-arm region Q4 and inter-element region Q5. By etching the inter-arm region Q4 and inter-element region Q5 of the first substrate surface 20A, the shape of the vibrating substrate 2 is formed.

[0095] A first substrate film 51 is formed in the first trench forming region Q1 of the first substrate surface 20A of the quartz substrate 20. Therefore, when the first dry etching process S4 begins, the etching of the first substrate film 51 begins first. Then, by removing the first substrate film 51, the first substrate surface 20A of the quartz substrate 20 is exposed, and the etching of the quartz substrate 20 begins. By etching the first trench forming region Q1 of the first substrate surface 20A, first trenches 221 and 231 are formed. In the first trench forming region Q1, the etching of the quartz substrate 20 begins later than in the inter-arm region Q4 and the inter-element region Q5. Therefore, the etching depth of the quartz substrate 20 in the first trench forming region Q1 is shallower than the etching depth of the quartz substrate 20 in the inter-arm region Q4 and the inter-element region Q5.

[0096] A first bottom film 51 and a first protective film 53 are formed in the first embankment formation region Qd1 of the first substrate surface 20A of the quartz substrate 20. Therefore, when the first dry etching process S4 begins, the etching of the first protective film 53 begins first. Then, by removing the first protective film 53, the etching of the first bottom film 51 begins. Then, by removing the first bottom film 51, the first substrate surface 20A of the quartz substrate 20 is exposed, and the etching of the quartz substrate 20 begins. Therefore, in the first embankment formation region Qd1, the etching on the first substrate surface 20A of the quartz substrate 20 begins later than in the first trench formation region Q1. That is, the etching depth of the quartz substrate 20 in the first embankment formation region Qd1 is shallower than the etching depth of the quartz substrate 20 in the first trench formation region Q1.

[0097] Furthermore, in this embodiment, by making the thickness of the first protective film 53 sufficiently thick, the first dry etching process S4 ends when the first bottom film 51 remains in the first embankment formation region Qd1 of the first substrate surface 20A. That is, the first embankment formation region Qd1 of the first substrate surface 20A is protected by the first bottom film 51. Therefore, in this embodiment, the first embankment formation region Qd of the first substrate surface 20A is not etched.

[0098] In addition, in this embodiment, the first protective film 53 is removed at the end of the first dry etching process S4, but it may not be removed.

[0099] The first dry etching step S4 is ended when the first grooves 221 and 231 reach a desired depth. The etching depth of the quartz substrate 20 in the first groove forming region Q1 is the depth Wa of the first grooves 221 and 231. The etching depth of the quartz substrate 20 in the inter-arm region Q4 is the depth Aa of the outer shape of the vibrating substrate 2. The etching depth of the quartz substrate 20 in the inter-element region Q5 is the depth Ba of the outer shape of the vibrating substrate 2.

[0100] As described above, the etching depth of the quartz substrate 20 in the first groove forming region Q1 is shallower than the etching depth of the quartz substrate 20 in the inter-arm region Q4 and the inter-element region Q5. Therefore, the depths Aa and Ba of the outer shape of the vibrating substrate 2 are deeper than the depth Wa of the first grooves 221 and 231. That is, Wa < Aa and Wa < Ba. In addition, in the present embodiment, each of the depths Aa and Ba is not less than half of the thickness Ta of the quartz substrate 20.

[0101] In this way, in the first base film forming step S2, the first base film 51 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 on the first substrate surface 20A of the quartz substrate 20, and in the first protective film forming step S3, the first protective film 53 is formed in the first bank portion forming region Qd1, which is a region excluding the first groove forming region Q1 in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 where the first base film 51 is formed. Thereby, in the first dry etching step S4, the outer shapes of the first vibrating arm 22 and the second vibrating arm 23 and the first grooves 221 and 231 can be collectively formed without utilizing the microloading effect. By adjusting the thickness and width of the first base film 51 and the first protective film 53, the dimensions of the first vibrating arm 22, the second vibrating arm 23, the first grooves 221 and 231 and the like can be controlled. Therefore, there is no restriction on the setting of dimensions such as the width A in the X direction in the inter-arm region Q4, the width B in the X direction in the inter-element region Q5, and the width W in the X direction in the first grooves 221 and 231, and the design freedom of the vibrating element 1 can be improved.

[0102] Furthermore, since the microloading effect is not utilized, restrictions on dry etching conditions such as selection of reaction gas used in dry etching are relaxed. Therefore, the vibrating element 1 can be manufactured more easily than in the case where the microloading effect is utilized.

[0103] Furthermore, as described above, in this embodiment, the dry etching process S4 ends when the first substrate surface 20A of the quartz substrate 20 remains in the first embankment formation region Qd1. That is, the first substrate surface 20A of the quartz substrate 20 in the first embankment formation region Qd1 is not etched in the first dry etching process S4. In the first substrate removal process S5 described later, the first substrate surface 20A of the quartz substrate 20 in the first embankment formation region Qd1 becomes the first surface 2A of the first vibrating arm 22 and the second vibrating arm 23. "The state in which the first substrate 51 remains" means "the state in which at least a portion of the first substrate 51 remains". For example, in this embodiment, when the dry etching process S4 ends, the first metal film 512 and the second metal film 513 constituting the first substrate 51 remain on the quartz substrate 20, but the second metal film 513 can also be removed.

[0104] Furthermore, in this embodiment, the first dry etching step S4 ends with the first substrate surface 20A of the quartz substrate 20 remaining in the first dam formation region Qd1. However, the dry etching can also end with no residue of the first substrate surface 20A of the quartz substrate 20 remaining in the first dam formation region Qd1. That is, the first substrate surface 20A of the quartz substrate 20 in the first dam formation region Qd1 can also be etched in the first dry etching step S4. In this case, the surface of the quartz substrate 20 etched in the first dry etching step S4 becomes the first surface 2A of the first vibrating arm 22 and the second vibrating arm 23.

[0105] Thus, the first surface 2A is formed by etching or not etching the first embankment forming region Qd1 of the first substrate surface 20A.

[0106] Furthermore, as described above, in this embodiment, the first base film 51 and the first protective film 53 are not formed in the inter-arm region Q4 and the inter-element region Q5. Therefore, the etching of the quartz substrate 20 in the inter-arm region Q4 and the inter-element region Q5 begins simultaneously with the start of the dry etching process S4. Thus, the first dry etching process S4 can be performed in a short time.

[0107] Furthermore, as described above, in this embodiment, the first substrate 51 is a metal film formed of metal. Typically, the etching rate of metal is lower than that of the resist material. Therefore, by making the first substrate 51 a metal film, its thickness can be reduced compared to a resist film. This improves the dimensional accuracy of the first vibrating arm 22, the second vibrating arm 23, and the first grooves 221, 231, etc., formed in the first dry etching process S4.

[0108] Furthermore, as described above, in this embodiment, the first protective film 53 is a metal film formed of metal. Therefore, by making the first protective film 53 a metal film, its thickness can be reduced compared to the resist film. As a result, the dimensional accuracy of the first vibrating arm 22, the second vibrating arm 23, the first grooves 221, 231, etc., formed in the first dry etching process S4 can be further improved.

[0109] <<Step 1: Bottom Film Removal Process S5>>

[0110] like Figure 15 As shown, the first base film 51 remaining on the first substrate surface 20A of the quartz substrate 20 in the first embankment formation region Qd1 is removed. Thus, the first substrate surface 20A of the quartz substrate 20 becomes the first surface 2A of the first vibrating arm 22 and the second vibrating arm 23. That is, the first surface 2A of the first vibrating arm 22 and the second vibrating arm 23 is not etched in the first dry etching process S4. Therefore, the thickness of the first vibrating arm 22 and the second vibrating arm 23 in the first embankment formation region Qd1, and the surface roughness of the first surface 2A, maintain the thickness of the quartz substrate 20 and the surface roughness of the first substrate surface 20A. Therefore, the thickness accuracy of the first vibrating arm 22 and the second vibrating arm 23 is improved, suppressing the generation of unwanted vibrations such as torsional vibration.

[0111] In the first dry etching process S4 described above, if the dry etching is completed without the first substrate surface 20A of the quartz substrate 20 remaining on the first substrate 51, the first substrate removal process S5 may not be provided.

[0112] Alternatively, if the first protective film 53 is not removed at the end of the first dry etching process S4, the first base film 51 and the first protective film 53 may be removed together in the first base film removal process S5. Or, a first protective film removal process to remove the first protective film 53 may be set before performing the first base film removal process S5.

[0113] After the first bottom film removal process S5 is completed, the process is transferred to the second substrate surface 20B of the quartz substrate 20.

[0114] <<Second Base Coating Process S61>>

[0115] This process is performed in the same way as the first base film coating process S21.

[0116] like Figure 15 As shown, the second substrate surface 20B of the quartz substrate 20 is covered by the second base film 61. The second base film 61 is formed of a material etched at a predetermined etching rate in the second dry etching process S8 described later.

[0117] In this embodiment, the second base film 61 is a metal film formed of metal. Specifically, the second base film 61 is formed by stacking a third metal film 612 and a fourth metal film 613. The third metal film 612 is formed on the second substrate surface 20B of the quartz substrate 20. The fourth metal film 613 is formed on the side of the third metal film 612 opposite to the quartz substrate 20. The side of the third metal film 612 opposite to the quartz substrate 20 is the negative Z-direction side of the third metal film 612. The third metal film 612 is formed of chromium (Cr). The fourth metal film 613 is formed of copper (Cu).

[0118] In this embodiment, the second bottom film 61 is formed by stacking the third metal film 612 and the fourth metal film 613, but it is not limited to this. It can also be formed by one film or by stacking three or more films.

[0119] Alternatively, the second substrate 61 can also be formed of a material other than metal. For example, the second substrate 61 can also be a resist film formed of a resist material.

[0120] <<Second Protective Film Coating Process S71>>

[0121] This process is performed in the same manner as the first protective film coating process S31.

[0122] A second protective film 63 is used to cover a second base film 61. The second protective film 63 is formed on the side of the second base film 61 opposite to the quartz substrate 20. The side of the second base film 61 opposite to the quartz substrate 20 is the negative side of the second base film 61 in the Z direction. The second protective film 63 is formed from a material etched at a predetermined etching rate in the second dry etching process S8 described later.

[0123] In this embodiment, the second protective film 63 is a metal film formed of metal. For example, nickel (Ni) can be used as the metal forming the second protective film 63. Alternatively, the second protective film 63 can also be formed of a material other than metal. For example, the second protective film 63 can also be a resist film formed of a resist material.

[0124] <<Second Protective Film Patterning Process S72>>

[0125] This process is performed in the same way as the first protective film patterning process S32.

[0126] First, a third resist film (not shown) is formed on the side of the second protective film 63 opposite to the quartz substrate 20. This side of the second protective film 63 is the negative Z-direction side. The third resist film is formed in the second embankment formation region Qd2 using photolithography. That is, the third resist film overlaps with the second embankment formation region Qd2 when viewed from above.

[0127] Next, the second protective film 63 is etched from the side where the third resist film is formed. The side of the second protective film 63 where the third resist film is formed is the negative side of the second protective film 63 in the Z direction. As a result, the second protective film 63 in the second trench forming region Q6, the inter-arm region Q4, and the inter-element region Q5 where the third resist film is not formed is removed.

[0128] Thus, as Figure 16 As shown, a second protective film 63 can be formed in the second embankment forming region Qd2, which is a defined area in the second bottom film 61.

[0129] <<Second Bottom Film Patterning Process S62>>

[0130] This process is performed in the same way as the first bottom film patterning process S22.

[0131] The second substrate patterning process S62 includes: forming a fourth resist film R4 in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3; and etching the second substrate film 61 using the fourth resist film R4 as a mask.

[0132] First, such as Figure 17 As shown, a fourth resist film R4 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 on the side of the second base film 61 opposite to the quartz substrate 20 using photolithography. The fourth resist film R4 is formed in the second embankment forming region Qd2, separated from the second protective film 63, on the side of the second base film 61 opposite to the quartz substrate 20. Furthermore, the fourth resist film R4 is formed in the second trench forming region Q6, without being separated from the second protective film 63, on the side of the second base film 61 opposite to the quartz substrate 20.

[0133] Next, the second substrate 61 is etched from the side where the fourth resist film R4 is formed. That is, the second substrate 61 is etched from the negative side of the Z-direction using the fourth resist film R4 as a mask. In this embodiment, the process of etching the second substrate 61 using the fourth resist film R4 as a mask includes: etching the third metal film 612 of the second substrate 61; and etching the fourth metal film 613 of the second substrate 61.

[0134] Thus, as Figure 17 As shown, the second bottom film 61 in the inter-arm region Q4 and inter-element region Q5 where the fourth resist film R4 is not formed is removed, and the second bottom film 61 can be formed in the first vibration arm forming region Q2 and the second vibration arm forming region Q3, which are designated regions in the second substrate surface 20B of the quartz substrate 20.

[0135] That is, through the second base film forming process S6, which includes the second base film coating process S61 and the second base film patterning process S62, the second base film 61 is formed in the first vibration arm forming region Q2 where the first vibration arm 22 is formed and the second vibration arm forming region Q3 where the second vibration arm 23 is formed in the second substrate surface 20B of the quartz substrate 20.

[0136] Furthermore, through the second protective film forming process S7, which includes the second protective film coating process S71 and the second protective film patterning process S72, the second protective film 63 is formed in the area of ​​the second embankment forming area Qd2, which is the area other than the second groove forming area Q6 in the first vibrating arm forming area Q2 and the second vibrating arm forming area Q3 where the second base film 61 is formed.

[0137] In this embodiment, the second base film coating process S61, the second base film patterning process S62, the second protective film coating process S71, and the second protective film patterning process S72 are performed in the following order: second base film coating process S61, second protective film coating process S71, second protective film patterning process S72, and second base film patterning process S62. However, the order in which the second base film coating process S61, the second base film patterning process S62, the second protective film coating process S71, and the second protective film patterning process S72 are performed is not limited to this. For example, the process can be carried out in the following order: second base film coating process S61, second base film patterning process S62, second protective film coating process S71, and second protective film patterning process S72; or it can be carried out in the following order: second base film coating process S61, second protective film coating process S71, second base film patterning process S62, and second protective film patterning process S72.

[0138] Next, as Figure 18 As shown, the fourth resist film R4 is removed, and the process is transferred to the second dry etching step S8.

[0139] <<Second Dry Etching Process S8>>

[0140] This process is performed in the same way as the first dry etching process S4.

[0141] like Figure 19 As shown, the quartz substrate 20 is dry-etched from the second substrate surface 20B side through the second bottom film 61 and the second protective film 63, thereby forming the shape of the second surface 2B, the second grooves 222 and 232 and the vibrating substrate 2.

[0142] In the second dry etching process S8, the second base film 61 and the second protective film 63 formed on the second substrate surface 20B of the quartz substrate 20 are etched at a predetermined etching rate. Therefore, the etching depth of the quartz substrate 20 in the respective regions where the second base film 61 and the second protective film 63 are not formed and the second substrate surface 20B is exposed, the region where the second base film 61 is formed, and the region where the second base film 61 and the second protective film 63 are formed can be controlled by the second base film 61 and the second protective film 63.

[0143] In this embodiment, the second base film 61 and the second protective film 63 are not formed in the inter-arm region Q4 and the inter-element region Q5 of the second substrate surface 20B of the quartz substrate 20. That is, the second substrate surface 20B of the quartz substrate 20 is exposed in the inter-arm region Q4 and the inter-element region Q5. Therefore, at the same time as the second dry etching process S8 begins, etching of the quartz substrate 20 begins in the inter-arm region Q4 and the inter-element region Q5. By etching the inter-arm region Q4 and the inter-element region Q5 of the second substrate surface 20B, the shape of the vibrating substrate 2 is formed.

[0144] A second base film 61 is formed in the second trench forming region Q6 of the second substrate surface 20B of the quartz substrate 20. Therefore, after the second base film 61 is removed, etching of the quartz substrate 20 begins. By etching the second trench forming region Q6 of the second substrate surface 20B, second trenches 222 and 232 are formed. In the second trench forming region Q6, the etching of the quartz substrate 20 begins later than that in the inter-arm region Q4 and the inter-element region Q5. Therefore, the etching depth of the quartz substrate 20 in the second trench forming region Q6 is shallower than that in the inter-arm region Q4 and the inter-element region Q5.

[0145] A second bottom film 61 and a second protective film 63 are formed in the second dam formation region Qd2 in the second substrate surface 20B of the quartz substrate 20. Therefore, in the second dam formation region Qd2, the etching on the second substrate surface 20B of the quartz substrate 20 begins later than in the second trench formation region Q6. That is, the etching depth of the quartz substrate 20 in the second dam formation region Qd2 is shallower than the etching depth of the quartz substrate 20 in the second trench formation region Q6.

[0146] In this embodiment, by making the second protective film 63 sufficiently thick, the second dry etching process S8 ends when the second bottom film 61 remains in the second embankment formation region Qd2 of the second substrate surface 20B. That is, the second embankment formation region Qd2 of the second substrate surface 20B is protected by the second bottom film 61. Therefore, the second embankment formation region Qd2 of the second substrate surface 20B is not etched.

[0147] In addition, in the present embodiment, the second protective film 63 is removed when the second dry etching step S8 is completed, but it may not be removed.

[0148] The second dry etching step S8 is ended when the second grooves 222 and 232 reach a desired depth. The etching depth of the quartz substrate 20 in the second groove formation region Q6 is the depth Wa of the second grooves 222 and 232. The etching depth of the quartz substrate 20 in the inter-arm region Q4 is the depth Aa of the outer shape of the vibration substrate 2. The etching depth of the quartz substrate 20 in the inter-element region Q5 is the depth Ba of the outer shape of the vibration substrate 2.

[0149] As described above, the etching depth of the quartz substrate 20 in the second groove formation region Q6 is shallower than the etching depth of the quartz substrate 20 in the inter-arm region Q4 and the inter-element region Q5. Therefore, the depths Aa and Ba of the outer shape of the vibration substrate 2 are deeper than the depth Wa of the second grooves 222 and 232. That is, Wa < Aa and Wa < Ba. In addition, in the present embodiment, the depths Aa and Ba are each not less than half of the thickness Ta of the quartz substrate 20. By setting the depths Aa and Ba to each be not less than half of the thickness Ta of the quartz substrate 20, the inter-arm region Q4 and the inter-element region Q5 are penetrated respectively in the second dry etching step S8. The first vibrating arm 22 and the second vibrating arm 23 are formed by penetrating the inter-arm region Q4 and the inter-element region Q5 respectively.

[0150] In this way, in the second base film forming step S6, the second base film 61 is formed in the first vibrating arm formation region Q2 and the second vibrating arm formation region Q3, and in the second protective film forming step S7, the second protective film 63 is formed in the second bank formation region Qd2, which is the region excluding the second groove formation region Q6 in the first vibrating arm formation region Q2 and the second vibrating arm formation region Q3 where the second base film 61 is formed. Therefore, in the second dry etching step S8, the outer shapes of the first vibrating arm 22 and the second vibrating arm 23 and the second grooves 222 and 232 can be formed together without utilizing the microloading effect. By adjusting the thickness and width of the second base film 61 and the second protective film 63, the dimensions of the first vibrating arm 22, the second vibrating arm 23, the second grooves 222, 232 and the like can be controlled, so there is no restriction on the setting of dimensions such as the width A in the X direction in the inter-arm region Q4, the width B in the X direction in the inter-element region Q5, and the width W in the X direction in the second grooves 222 and 232, and the design freedom of the vibrating element 1 can be improved.

[0151] Furthermore, since the microloading effect is not utilized, restrictions on dry etching conditions such as selection of reaction gas used in dry etching are relaxed, so that the vibrating element 1 can be manufactured more easily compared to the case where the microloading effect is utilized.

[0152] Furthermore, as described above, in this embodiment, the dry etching process S8 ends when the second bottom film 61 remains on the second substrate surface 20B of the quartz substrate 20 in the second embankment formation region Qd2. That is, the second substrate surface 20B of the quartz substrate 20 in the second embankment formation region Qd2 is not etched in the second dry etching process S8. In the second bottom film removal process S9 described later, the second substrate surface 20B of the quartz substrate 20 in the second embankment formation region Qd2 becomes the second surface 2B of the first vibrating arm 22 and the second vibrating arm 23. In addition, "the state in which the second bottom film 61 remains" means "the state in which at least a portion of the second bottom film 61 remains". For example, in this embodiment, when the dry etching process S8 ends, the third metal film 612 and the fourth metal film 613 constituting the second bottom film 61 remain on the quartz substrate 20, but the fourth metal film 613 can also be removed.

[0153] Furthermore, in this embodiment, the second dry etching process S8 ends when the second base film 61 remains on the second substrate surface 20B of the quartz substrate 20 in the second embankment formation region Qd2. However, the dry etching can also end when the second base film 61 does not remain on the second substrate surface 20B of the quartz substrate 20 in the second embankment formation region Qd2. That is, the second substrate surface 20B of the quartz substrate 20 in the second embankment formation region Qd2 can also be etched in the second dry etching process S8. In this case, the surface of the quartz substrate 20 etched in the second dry etching process S8 becomes the second surface 2B of the first vibrating arm 22 and the second vibrating arm 23.

[0154] Thus, the second surface 2B is formed by etching or not etching the second embankment forming region Qd2 of the second substrate surface 20B.

[0155] Furthermore, as described above, in this embodiment, the second base film 61 and the second protective film 63 are not formed in the inter-arm region Q4 and the inter-element region Q5. Therefore, the etching of the quartz substrate 20 in the inter-arm region Q4 and the inter-element region Q5 begins simultaneously with the start of the dry etching process S8. Thus, the second dry etching process S8 can be performed in a short time.

[0156] Furthermore, as described above, in this embodiment, the second substrate 61 is a metal film formed of metal. Therefore, by making the second substrate 61 a metal film, its thickness can be reduced compared to the resist film. This improves the dimensional accuracy of the first vibrating arm 22, the second vibrating arm 23, the second grooves 222 and 232, etc., formed in the second dry etching process S8.

[0157] Furthermore, as described above, in this embodiment, the second protective film 63 is a metal film formed of metal. Therefore, by making the second protective film 63 a metal film, its thickness can be reduced compared to the resist film. This further improves the dimensional accuracy of the first vibrating arm 22, the second vibrating arm 23, and the second grooves 222, 232, etc., formed in the second dry etching process S8.

[0158] In this embodiment, the first substrate 51 and the second substrate 61 are metal films, but it is sufficient if at least one of the first substrate 51 and the second substrate 61 is a metal film. For example, one of the first substrate 51 and the second substrate 61 may be a metal film and the other may be a photoresist film.

[0159] In addition, in this embodiment, the first protective film 53 and the second protective film 63 are metal films, but it is sufficient if at least one of the first protective film 53 and the second protective film 63 is a metal film. For example, at least one of the first protective film 53 and the second protective film 63 may be a metal film, and the other protective film may be a photoresist film.

[0160] <<Second bottom film removal process S9>>

[0161] This process is performed in the same way as the first bottom film removal process S5.

[0162] like Figure 20 As shown, the second bottom film 61 remaining on the second substrate surface 20B of the quartz substrate 20 in the second dike formation region Qd2 is removed. Thus, the second substrate surface 20B of the quartz substrate 20 becomes the second surface 2B of the first vibrating arm 22 and the second vibrating arm 23. That is, the second surface 2B of the first vibrating arm 22 and the second vibrating arm 23 is not etched in the second dry etching process S8. Therefore, the thickness of the first vibrating arm 22 and the second vibrating arm 23 in the second dike formation region Qd2, and the surface roughness of the second surface 2B, maintain the thickness of the quartz substrate 20 and the surface roughness of the second substrate surface 20B. Therefore, the thickness accuracy of the first vibrating arm 22 and the second vibrating arm 23 is improved, suppressing the generation of unwanted vibrations such as torsional vibration.

[0163] In the second dry etching process S8 described above, if the dry etching is completed without the second substrate film 61 remaining on the second substrate surface 20B of the quartz substrate 20, the second substrate film removal process S9 may not be provided.

[0164] Alternatively, if the second protective film 63 is not removed at the end of the second dry etching process S8, the second base film 61 and the second protective film 63 may be removed together in the second base film removal process S9. Or, a second protective film removal process to remove the second protective film 63 may be performed before the second base film removal process S9.

[0165] Furthermore, in this embodiment, in the first bottom film removal step S5, the first bottom film 51 remaining on the first substrate surface 20A of the quartz substrate 20 is removed, and in the second bottom film removal step S9, the second bottom film 61 remaining on the second substrate surface 20B of the quartz substrate 20 is removed. However, the first bottom film removal step S5 may be omitted, and the first bottom film 51 remaining on the first substrate surface 20A of the quartz substrate 20 and the second bottom film 61 remaining on the second substrate surface 20B of the quartz substrate 20 may be removed together in the second bottom film removal step S9.

[0166] Through the above processes S1 to S9, as follows Figure 20 As shown, multiple vibrating substrates 2 are formed together from the quartz substrate 20.

[0167] <<Electrode Formation Process S10>>

[0168] A metal film is formed on the surface of the vibrating substrate 2, and the metal film is patterned to form an electrode 3.

[0169] Thus, vibration element 1 is obtained.

[0170] As described above, dry etching allows for processing without being affected by the crystal planes of the quartz, thus achieving excellent dimensional accuracy. Furthermore, by forming the first grooves 221, 231 and the second grooves 222, 232 along with the outer shape of the vibrating substrate 2, the manufacturing process of the vibrating element 1 can be reduced, and the cost of the vibrating element 1 can be lowered. Additionally, preventing positional misalignment of the first grooves 221, 231 and the second grooves 222, 232 relative to the outer shape improves the forming accuracy of the vibrating substrate 2.

[0171] The manufacturing method of the vibrating element 1 has been described above. However, the present invention is not limited thereto, and the structure of each part can be replaced with any structure having the same function. In addition, the present invention can also be supplemented with other arbitrary components.

[0172] As described above, the following effects can be obtained according to this embodiment.

[0173] In the manufacturing method of the vibrating element 1, the vibrating element 1 has a first vibrating arm 22 and a second vibrating arm 23 extending along the Y direction (a first direction) and arranged along the X direction (a second direction intersecting the Y direction). The first vibrating arm 22 and the second vibrating arm 23 each have a first surface 2A and a second surface 2B, a first groove 221 and 231 with a bottom that opens on the first surface 2A, and a second groove 222 and 232 with a bottom that opens on the second surface 2B. The first surface 2A and the second surface 2B are arranged along the Y direction and the X direction. The quartz substrate 20 is arranged in a forward and reverse orientation along the Z direction of the intersecting third direction. The manufacturing method includes: a preparation step S1, preparing a quartz substrate 20 having a first substrate surface 20A and a second substrate surface 20B in a forward and reverse orientation; a first base film formation step S2, forming a first base film 51 in the first substrate surface 20A, specifically in the first vibrating arm forming region Q2 where the first vibrating arm 22 is formed and the second vibrating arm forming region Q3 where the second vibrating arm 23 is formed; and a first protective film formation step S3, forming a protective film in the first base film 51, in addition to the forming… A first protective film 53 is formed in the area outside the first groove forming area Q1 of the first grooves 221 and 231, i.e., the first embankment forming area Qd1; in the first dry etching process S4, the quartz substrate 20 is dry etched from the first substrate 20A side through the first base film 51 and the first protective film 53 to form the shape of the first surface 2A, the first grooves 221 and 231, the first vibrating arm 22, and the second vibrating arm 23; in the second base film forming process S6, the first vibrating arm forming area Q2 and the second vibrating arm forming area Qd1 in the second substrate surface 20B are formed. In the second bottom film formation process S7, a second protective film 63 is formed in the second bottom film 61 in the area other than the second trench formation area Q6 forming the second trenches 222 and 232, i.e., the second embankment formation area Qd2. In the second dry etching process S8, the quartz substrate 20 is dry etched from the second substrate surface 20B side through the second bottom film 61 and the second protective film 63 to form the shape of the second surface 2B, the second trenches 222 and 232, the first vibration arm 22, and the second vibration arm 23.

[0174] Therefore, the shapes of the first vibrating arm 22 and the second vibrating arm 23, as well as the first grooves 221, 231 and the second grooves 222, 232, can be formed simultaneously. Furthermore, there are no restrictions on the setting of dimensions such as the width A in the X direction in the inter-arm region Q4, the width B in the X direction in the inter-element region Q5, the width W in the X direction in the first grooves 221, 231, and the width W in the X direction in the second grooves 222, 232. This provides a manufacturing method for a vibrating element 1 with a high degree of design freedom.

[0175] 2. Implementation Method 2

[0176] Reference Figure 21 and Figure 22The manufacturing method of the vibration element 1 in Embodiment 2 is described below. Structures identical to those in Embodiment 1 are labeled with the same reference numerals, and repeated descriptions are omitted.

[0177] In Embodiment 2, the first protective film forming step S3 includes the step of forming the second resist film R2 in the first base film patterning step S22. In the first base film patterning step S22, the second resist film R2 is not removed and is used as the third protective film 55. The second protective film forming step S7 includes the step of forming the fourth resist film R4 in the second base film patterning step S62. In the second base film patterning step S62, the fourth resist film R4 is not removed and is used as the fourth protective film 65. Otherwise, Embodiment 2 is the same as Embodiment 1.

[0178] In other words, in Embodiment 2, dry etching begins in the first dry etching step S4 while the second resist film R2 is formed, and dry etching begins in the second dry etching step S8 while the fourth resist film R4 is formed. Otherwise, Embodiment 2 is the same as Embodiment 1.

[0179] The preparation process S1, the first base film coating process S21, the first protective film coating process S31, and the first protective film patterning process S32 are the same as in Embodiment 1, so the description is omitted and will begin from the first base film patterning process S22.

[0180] <<First Base Film Patterning Process S22>>

[0181] like Figure 21 As shown, firstly, a second resist film R2 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 on the surface of the first base film 51 opposite to the quartz substrate 20 using photolithography.

[0182] In this embodiment, the step of forming the second resist film R2 in the first base film patterning step S22 is included in the first protective film forming step S3.

[0183] Furthermore, in this embodiment, the second resist film R2 is formed from resist material etched at a predetermined etching rate in the first dry etching step S4. Additionally, the second resist film R2 is formed to be thinner than the first protective film 53. The second resist film R2 formed in the first trench forming region Q1 of the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 corresponds to the third protective film 55. In other words, in the first protective film forming step S3, a second resist film R2, thinner than the first protective film 53, is formed in the first trench forming region Q1 of the first base film 51, serving as the third protective film 55.

[0184] Next, the first base film 51 is etched from the side where the second resist film R2 is formed. As a result, the first base film 51 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 in the first substrate surface 20A of the quartz substrate 20.

[0185] Next, without removing the second resist film R2, proceed to the first dry etching process S4.

[0186] <<First Dry Etching Process S4>>

[0187] like Figure 21 As shown, in the first dry etching step S4, dry etching begins with the second resist film R2 formed. Otherwise, it is the same as in Embodiment 1.

[0188] The second resist film R2 is etched in the same way as the first base film 51 and the first protective film 53 in the first dry etching process S4. Therefore, even when the second resist film R2, which serves as the third protective film 55, is formed in the first trench forming region Q1, in the first dry etching process S4, as... Figure 22 As shown, the shapes of the first vibrating arm 22 and the second vibrating arm 23, as well as the first grooves 221 and 231, can also be formed together.

[0189] Even when the second resist film R2 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3, the outlines of the first vibrating arm 22 and the second vibrating arm 23, as well as the first grooves 221 and 231, can be formed simultaneously in the first dry etching process S4. Therefore, the process of removing the second resist film R2 is unnecessary. That is, the manufacturing process of the vibrating substrate 2 can be reduced.

[0190] At the end of the first dry etching process S4, the process moves to the first substrate removal process S5.

[0191] In this embodiment, the first dry etching process S4 ends when the first bottom film 51 remains on the first substrate surface 20A of the quartz substrate 20 in the first embankment formation region Qd1. However, the first bottom film 51 remaining on the first substrate surface 20A of the quartz substrate 20 is removed by the first bottom film removal process S5. Figure 22 Not shown in the image.

[0192] The first base film removal process S5, the second base film coating process S61, the second protective film coating process S71, and the second protective film patterning process S72 are the same as in Embodiment 1, so the description is omitted and will begin from the second base film patterning process S62.

[0193] <<Second Bottom Film Patterning Process S62>>

[0194] like Figure 22As shown, firstly, a fourth resist film R4 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 on the surface of the second base film 61 opposite to the quartz substrate 20 using photolithography.

[0195] In this embodiment, the step of forming the fourth resist film R4 in the second base film patterning step S62 is included in the second protective film forming step S7.

[0196] Furthermore, in this embodiment, the fourth resist film R4 is formed from the resist material etched at a predetermined etching rate in the second dry etching process S8. Additionally, the fourth resist film R4 is formed to be thinner than the second protective film 63. The fourth resist film R4 formed in the second trench forming region Q6 of the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 corresponds to the fourth protective film 65. In other words, in the second protective film forming process S7, a fourth resist film R4, thinner than the second protective film 63, is formed in the second trench forming region Q6 of the second base film 61 as the fourth protective film 65.

[0197] Next, the second substrate 61 is etched from the side where the fourth resist film R4 is formed. As a result, the second substrate 61 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 in the second substrate surface 20B of the quartz substrate 20.

[0198] Next, without removing the fourth resist film R4, proceed to the second dry etching process S8.

[0199] <<Second Dry Etching Process S8>>

[0200] like Figure 22 As shown, in the second dry etching step S8, dry etching begins with the fourth resist film R4 formed. Otherwise, it is the same as in Embodiment 1.

[0201] The fourth resist film R4 is etched in the same way as the second base film 61 and the second protective film 63 in the second dry etching process S8. Therefore, even when the fourth resist film R4, which serves as the fourth protective film 65, is formed in the second trench forming region Q6, the shapes of the first vibrating arm 22 and the second vibrating arm 23, as well as the second trenches 222 and 232, can be formed simultaneously in the second dry etching process S8.

[0202] Even with the fourth resist film R4 formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3, the shapes of the first vibrating arm 22 and the second vibrating arm 23, as well as the second grooves 222 and 232, can be formed simultaneously in the second dry etching process S8. Therefore, the process of removing the fourth resist film R4 is unnecessary. That is, the manufacturing process of the vibrating substrate 2 can be reduced.

[0203] At the end of the second dry etching process S8, the process moves to the second bottom film removal process S9.

[0204] Through the above processes S1 to S9, as follows Figure 20 As shown, multiple vibrating substrates 2 are formed together from the quartz substrate 20.

[0205] The second bottom film removal process S9 and the electrode formation process S10 are the same as in Embodiment 1, so the description is omitted.

[0206] In this embodiment, a second resist film R2, serving as a third protective film 55, is formed in the first protective film forming step S3, but the third protective film 55 may not be formed. Similarly, a fourth resist film R4, serving as a fourth protective film 65, is formed in the second protective film forming step S7, but the fourth protective film 65 may not be formed. That is, at least one of the third protective film 55 and the fourth protective film 65 may be formed in both the first protective film forming step S3 and the second protective film forming step S7. In other words, at least one of the second resist film R2 and the fourth resist film R4 may be removed in the first substrate patterning step S22 and the second substrate patterning step S62.

[0207] According to this embodiment, in addition to the effects of embodiment 1, the following effects can also be obtained.

[0208] Even when a second resist film R2, serving as a third protective film 55, is formed in the first trench forming region Q1, the shapes of the first vibrating arm 22 and the second vibrating arm 23, as well as the first trenches 221 and 231, can be formed simultaneously in the first dry etching process S4. Furthermore, even when a fourth resist film R4, serving as a fourth protective film 65, is formed in the second trench forming region Q6, the shapes of the first vibrating arm 22 and the second vibrating arm 23, as well as the second trenches 222 and 232, can be formed simultaneously in the second dry etching process S8. Additionally, the process of removing the second resist film R2 and the fourth resist film R4 is unnecessary, reducing the number of manufacturing steps for the vibrating substrate 2.

[0209] 3. Implementation Method 3

[0210] Reference Figure 23 , Figure 24 and Figure 25 The manufacturing method of the vibration element 1 in Embodiment 3 is described below. Furthermore, structures identical to those in Embodiment 1 are labeled with the same reference numerals, and repeated descriptions are omitted.

[0211] In Embodiment 3, in the first base film patterning process S22, the second metal film 513 formed in the first base film 51 on the inter-arm region Q4 and the inter-element region Q5 is removed, and the remaining first metal film 512 is used as the third base film 57. In the second base film patterning process S62, the fourth metal film 613 formed in the second base film 61 on the inter-arm region Q4 and the inter-element region Q5 is removed, and the remaining third metal film 612 is used as the fourth base film 67. Otherwise, Embodiment 3 is the same as Embodiment 1.

[0212] In other words, in Embodiment 3, dry etching begins in the first dry etching process S4 when the first metal film 512, which serves as the third base film 57, is formed in the inter-arm region Q4 and the inter-element region Q5, and in the second dry etching process S8 when the third metal film 612, which serves as the fourth base film 67, is formed in the inter-arm region Q4 and the inter-element region Q5. Otherwise, Embodiment 3 is the same as Embodiment 1.

[0213] The preparation process S1, the first base film coating process S21, the first protective film coating process S31, and the first protective film patterning process S32 are the same as in Embodiment 1, so the description is omitted and will begin from the first base film patterning process S22.

[0214] <<First Base Film Patterning Process S22>>

[0215] like Figure 23 As shown, firstly, a second resist film R2 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 on the surface of the first base film 51 opposite to the quartz substrate 20 using photolithography.

[0216] Next, the second metal film 513 in the first base film 51 is etched from the side of the first base film 51 where the second resist film R2 is formed. As a result, the second metal film 513 in the inter-arm region Q4 and the inter-element region Q5 where the second resist film R2 is not formed is removed. Furthermore, the first base film 51 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 in the first substrate surface 20A of the quartz substrate 20.

[0217] In the inter-arm region Q4 and the inter-component region Q5, the second metal film 513 in the first base film 51 is removed, but the first metal film 512 is not removed. That is, the first metal film 512 is formed in the inter-arm region Q4 and the inter-component region Q5 in the first substrate surface 20A of the quartz substrate 20. The first metal film 512 formed in the inter-arm region Q4 and the inter-component region Q5 in the first substrate surface 20A of the quartz substrate 20 corresponds to the third base film 57. In other words, in the first base film formation process S2, a first metal film 512, which is thinner than the first base film 51 and serves as the third base film 57, is formed in the inter-arm region Q4 and the inter-component region Q5 of the first substrate surface 20A.

[0218] Next, as Figure 24 As shown, the second resist film R2 formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 is removed, and the process is transferred to the first dry etching process S4.

[0219] <<First Dry Etching Process S4>>

[0220] like Figure 24 As shown, in the first dry etching process S4, dry etching begins with a first metal film 512, which serves as the third base film 57, formed in the inter-arm region Q4 and the inter-element region Q5. Otherwise, it is the same as in Embodiment 1.

[0221] In the first dry etching process S4, the first metal film 512, which serves as the third base film 57, is etched in the same way as the first base film 51 and the first protective film 53. Therefore, even when the first metal film 512, which serves as the third base film 57, is formed in the inter-arm region Q4 and the inter-element region Q5, in the first dry etching process S4, as... Figure 25 As shown, the shapes of the first vibrating arm 22 and the second vibrating arm 23, as well as the first grooves 221 and 231, can also be formed together.

[0222] Even when the first metal film 512 is formed in the inter-arm region Q4 and the inter-element region Q5, the outlines of the first vibrating arm 22 and the second vibrating arm 23, as well as the first grooves 221 and 231, can be formed simultaneously. Therefore, the etching process of the first metal film 512 is not required in the first base film patterning process S22. That is, the manufacturing process of the vibrating substrate 2 can be reduced.

[0223] At the end of the first dry etching process S4, the process moves to the first substrate removal process S5.

[0224] In this embodiment, the first dry etching process S4 ends when the first bottom film 51 remains on the first substrate surface 20A of the quartz substrate 20 in the first embankment formation region Qd1. However, the first bottom film 51 remaining on the first substrate surface 20A of the quartz substrate 20 is removed by the first bottom film removal process S5. Figure 25 Not shown in the image.

[0225] The first base film removal process S5, the second base film coating process S61, the second protective film coating process S71, and the second protective film patterning process S72 are the same as in Embodiment 1, so the description is omitted and will begin from the second base film patterning process S62.

[0226] <<Second Bottom Film Patterning Process S62>>

[0227] like Figure 25 As shown, similar to the first substrate patterning process S22, the fourth metal film 613 in the second substrate 61 in the inter-arm region Q4 and the inter-element region Q5 is removed using photolithography and etching. Furthermore, the second substrate 61 is formed in the first vibrating arm forming region Q2 and the second vibrating arm forming region Q3 in the second substrate surface 20B of the quartz substrate 20.

[0228] In the inter-arm region Q4 and the inter-component region Q5, the fourth metal film 613 in the second base film 61 is removed, but the third metal film 612 is not removed. That is, the third metal film 612 is formed in the inter-arm region Q4 and the inter-component region Q5 in the second substrate surface 20B of the quartz substrate 20. The third metal film 612 formed in the inter-arm region Q4 and the inter-component region Q5 in the second substrate surface 20B of the quartz substrate 20 corresponds to the fourth base film 67. In other words, in the second base film formation process S6, a third metal film 612, which is thinner than the second base film 61 and serves as the fourth base film 67, is formed in the inter-arm region Q4 and the inter-component region Q5 of the second substrate surface 20B.

[0229] <<Second Dry Etching Process S8>>

[0230] like Figure 25 As shown, in the second dry etching process S8, dry etching begins with the third metal film 612, which serves as the fourth base film 67, formed in the inter-arm region Q4 and the inter-element region Q5. Otherwise, it is the same as in Embodiment 1.

[0231] In the second dry etching process S8, the third metal film 612, which serves as the fourth base film 67, is etched in the same way as the second base film 61 and the second protective film 63. Therefore, even when the third metal film 612, which serves as the fourth base film 67, is formed in the inter-arm region Q4 and the inter-element region Q5, the outlines of the first vibrating arm 22 and the second vibrating arm 23, as well as the second grooves 222 and 232, can be formed simultaneously in the second dry etching process S8.

[0232] Even when the third metal film 612 is formed in the inter-arm region Q4 and the inter-element region Q5, the outlines of the first vibration arm 22 and the second vibration arm 23, as well as the second grooves 222 and 232, can be formed simultaneously. Therefore, the etching process of the third metal film 612 is not required in the second bottom film patterning process S62. That is, the manufacturing process of the vibration substrate 2 can be reduced.

[0233] At the end of the second dry etching process S8, the process moves to the second bottom film removal process S9.

[0234] Through the above processes S1 to S9, as follows Figure 20 As shown, multiple vibrating substrates 2 are formed together from the quartz substrate 20.

[0235] The second bottom film removal process S9 and the electrode formation process S10 are the same as in Embodiment 1, so the description is omitted.

[0236] According to this embodiment, in addition to the effects of embodiment 1, the following effects can also be obtained.

[0237] Even when a first metal film 512, serving as a third base film 57, is formed in the inter-arm region Q4, the shapes of the first vibrating arm 22 and the second vibrating arm 23, as well as the first grooves 221 and 231, can be formed simultaneously in the first dry etching process S4. Furthermore, even when a third metal film 612, serving as a fourth base film 67, is formed in the inter-arm region Q4, the shapes of the first vibrating arm 22 and the second vibrating arm 23, as well as the second grooves 222 and 232, can be formed simultaneously in the second dry etching process S8. Additionally, the process of removing the first metal film 512 and the third metal film 612 is unnecessary, reducing the number of manufacturing steps for the vibrating substrate 2.

[0238] In this embodiment, during the first substrate patterning process S22, a first metal film 512, serving as the third substrate film 57, is formed in the inter-arm region Q4 and inter-element region Q5 of the first substrate surface 20A of the quartz substrate 20. However, the first metal film 512 as the third substrate film 57 may not be formed. That is, as in Embodiment 1 described above, the first substrate film 51 may not be formed in the inter-arm region Q4 and inter-element region Q5 of the first substrate surface 20A. When the first substrate film 51 is not formed in the inter-arm region Q4 and inter-element region Q5 of the first substrate surface 20A, the first substrate surface 20A of the quartz substrate 20 is exposed in the inter-arm region Q4 and inter-element region Q5. Therefore, compared to the case where the first metal film 512 as the third substrate film 57 is formed, the first dry etching process S4 can be completed in a shorter time.

[0239] Furthermore, in this embodiment, during the second substrate patterning process S62, a third metal film 612, serving as the fourth substrate film 67, is formed in the inter-arm region Q4 and inter-element region Q5 of the second substrate surface 20B of the quartz substrate 20. However, the third metal film 612, serving as the fourth substrate film 67, may not be formed. That is, as in Embodiment 1 described above, the second substrate film 61 may not be formed in the inter-arm region Q4 and inter-element region Q5 of the second substrate surface 20B. When the second substrate film 61 is not formed in the inter-arm region Q4 and inter-element region Q5 of the second substrate surface 20B, the second substrate surface 20B of the quartz substrate 20 is exposed in the inter-arm region Q4 and inter-element region Q5. Therefore, compared to the case where the third metal film 612, serving as the fourth substrate film 67, is formed, the second dry etching process S8 can be completed in a shorter time.

[0240] That is, the third substrate film 57 or the fourth substrate film 67 can be formed on at least one of the inter-arm region Q4 on the first substrate surface 20A and the inter-arm region Q4 on the second substrate surface 20B. In addition, the third substrate film 57 or the fourth substrate film 67 can be formed on at least one of the inter-component region Q5 on the first substrate surface 20A and the inter-component region Q5 on the second substrate surface 20B.

[0241] In other words, the first substrate film 51 or the second substrate film 61 may not be formed in at least one of the inter-arm region Q4 of the first substrate surface 20A and the inter-arm region Q4 of the second substrate surface 20B. Alternatively, the first substrate film 51 or the second substrate film 61 may not be formed in at least one of the inter-component region Q5 of the first substrate surface 20A and the inter-component region Q5 of the second substrate surface 20B.

[0242] The manufacturing method of the vibration element of the present invention has been described above according to Embodiments 1, 2 and 3.

[0243] The vibrating element manufactured by the method of manufacturing the vibrating element of the present invention is not particularly limited.

[0244] The vibration element manufactured using the manufacturing method of the vibration element of the present invention can be, for example, a... Figure 26 and Figure 27 The double tuning fork type vibrating element 7 is shown. Additionally, in... Figure 26 and Figure 27 The electrodes are not shown in the diagram. The double tuning fork type vibrating element 7 has: a pair of bases 711, 712; and a first vibrating arm 72 and a second vibrating arm 73 connecting the bases 711, 712. In addition, the first vibrating arm 72 and the second vibrating arm 73 each have: a first groove 721, 731 with a bottom that opens on the first surface 7A; a second groove 722, 732 with a bottom that opens on the second surface 7B; a first embankment 725, 735 that defines the first grooves 721, 731; and a second embankment 726, 736 that defines the second grooves 722, 732.

[0245] Alternatively, for example, the vibrating element can also be Figure 28 , Figure 29 as well as Figure 30 The gyroscope oscillating element 8 is shown. Additionally, in... Figure 28 , Figure 29 as well as Figure 30 The electrodes are omitted from the diagram. The gyroscope vibration element 8 includes: a base 81; a pair of detection vibration arms 82 and 83 extending from the base 81 in the Y direction; a pair of connecting arms 84 and 85 extending from the base 81 in the X direction; drive vibration arms 86 and 87 extending from the front end of the connecting arm 84 in the Y direction; and drive vibration arms 88 and 89 extending from the front end of the connecting arm 85 in the Y direction. In this gyroscope vibration element 8, when the drive vibration arms 86, 87, 88, and 89 are directed towards… Figure 28 When the angular velocity ωz around the Z-axis is applied under the bending vibration state in the direction of arrow SD, the detection vibration arms 82 and 83 are re-excited to bend in the direction of arrow SS by the Coriolis force, and the angular velocity ωz is detected based on the charge output from the detection vibration arms 82 and 83 through this bending vibration.

[0246] In addition, the detection vibration arms 82 and 83 have: a first groove 821 and 831 with a bottom that opens on the first surface 8A; a second groove 822 and 832 with a bottom that opens on the second surface 8B; a first embankment 825 and 835 that delineates the first groove 821 and 831; and a second embankment 826 and 836 that delineates the second groove 822 and 832. Furthermore, the driving vibration arms 86, 87, 88, and 89 have: first grooves 861, 871, 881, 891, and 891 with bottoms that open on the first surface 8A; second grooves 862, 872, 882, and 892 with bottoms that open on the second surface 8B; first embankments 865, 875, 885, and 895 that divide the first grooves 861, 871, 881, and 891; and second embankments 866, 876, 886, and 896 that divide the second grooves 862, 872, 882, and 892. In this gyroscope vibration element 8, for example, the driving vibration arms 86 and 88 or the driving vibration arms 87 and 89 become the first vibration arm and the second vibration arm.

[0247] Alternatively, for example, the vibrating element can also be Figure 31 , Figure 32 as well as Figure 33 The gyroscope oscillating element 9 is shown. Additionally, in... Figure 31 , Figure 32 as well as Figure 33 The electrodes are omitted from the diagram. The gyroscope vibration element 9 has: a base 91; a pair of drive vibration arms 92 and 93 extending from the base 91 in the positive Y direction and arranged in the X direction; and a pair of detection vibration arms 94 and 95 extending from the base 91 in the negative Y direction and arranged in the X direction. In this gyroscope vibration element 9, when the drive vibration arms 92 and 93 are directed towards... Figure 31 When the angular velocity ωy around the Y-axis is applied under the bending vibration state in the direction of arrow SD, the bending vibration in the direction of arrow SS is re-excited on the detection vibration arms 94 and 95 by the Coriolis force, and the angular velocity ωy is detected based on the charge output from the detection vibration arms 94 and 95 through this bending vibration.

[0248] Furthermore, the driving vibration arms 92 and 93 have: a first groove 921 and 931 with a bottom and an opening on the first surface 9A; a second groove 922 and 932 with a bottom and an opening on the second surface 9B; a first embankment 925 and 935 defining the first groove 921 and 931; and a second embankment 926 and 936 defining the second groove 922 and 932. Additionally, the detection vibration arms 94 and 95 have: a first groove 941 and 951 with a bottom and an opening on the first surface 9A; a second groove 942 and 952 with a bottom and an opening on the second surface 9B; a first embankment 945 and 955 defining the first groove 941 and 951; and a second embankment 946 and 956 defining the second groove 942 and 952. In this gyroscope vibration element 9, the driving vibration arms 92 and 93 or the detection vibration arms 94 and 95 become the first vibration arm and the second vibration arm, respectively.

Claims

1. A method for manufacturing a vibrating element, wherein, The vibrating element has a first vibrating arm and a second vibrating arm extending along a first direction and arranged along a second direction intersecting the first direction. The first vibrating arm and the second vibrating arm each have a first surface and a second surface, a first groove with a bottom that opens on the first surface, and a second groove with a bottom that opens on the second surface. The first surface and the second surface are arranged in a positive-negative relationship in a third direction that intersects the first direction and the second direction. The manufacturing method includes: Preparation process: Prepare a quartz substrate with a first substrate surface and a second substrate surface that are in a positive and negative relationship. In the first base film forming process, a first base film is formed in the first substrate surface in the first vibrating arm forming region where the first vibrating arm is formed and the second vibrating arm forming region where the second vibrating arm is formed; In the first protective film forming process, a first protective film is formed in the area of ​​the first base film other than the area where the first groove is formed, and a third protective film with a thickness thinner than the first protective film is formed in the area where the first groove is formed in the first base film. The first dry etching process involves dry etching the first base film, the first protective film, the third protective film, and the quartz substrate from the first substrate side, simultaneously forming the outlines of the first surface, the first groove, the first vibrating arm, and the second vibrating arm on the quartz substrate. In the second substrate forming process, a second substrate is formed in the first vibrating arm forming region and the second vibrating arm forming region on the second substrate surface; In the second protective film forming process, a second protective film is formed in the area of ​​the second base film other than the area where the second groove is formed, and a fourth protective film with a thickness thinner than the second protective film is formed in the area where the second groove is formed in the second base film; and The second dry etching process involves dry etching the second base film, the second protective film, the fourth protective film, and the quartz substrate from the second substrate side, simultaneously forming the outlines of the second surface, the second groove, the first vibrating arm, and the second vibrating arm on the quartz substrate.

2. The method for manufacturing a vibrating element according to claim 1, wherein, In the first base film formation process, a third base film with a thickness thinner than the first base film is formed in the inter-arm region located on the first substrate surface between the first vibrating arm formation region and the second vibrating arm formation region. In the second base film forming process, a fourth base film with a thickness thinner than the second base film is formed in the interarm region on the second substrate surface.

3. The method for manufacturing a vibrating element according to claim 1, wherein, The first base film or the second base film is not formed in at least one of the inter-arm region located between the first vibration arm forming region and the second vibration arm forming region on the first substrate surface and the inter-arm region on the second substrate surface.

4. The method for manufacturing a vibrating element according to any one of claims 1 to 3, wherein, In the first dry etching process, the dry etching is completed while the first base film remains on the surface of the first substrate. The manufacturing method further includes a first substrate removal step to remove residual first substrate film.

5. The method for manufacturing a vibrating element according to claim 4, wherein, In the second dry etching process, the dry etching is completed while the second base film remains on the surface of the second substrate. The manufacturing method further includes a second substrate removal step to remove residual second substrate film.

6. A method for manufacturing a vibrating element according to any one of claims 1 to 3, wherein, At least one of the first substrate and the second substrate is a metal film.

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