一种带高边采样的复合型低侧驱动器
By integrating a composite low-side drive circuit and a high-side sampling circuit, and utilizing voltage sampling and amplification on resistor R0, combined with Schmitt trigger and transistor control, a current pulse of several amperes can be provided within 100ns. This solves the problem of slow driver switching speed in existing technologies and improves signal anti-interference and compatibility.
CN116015270BActive Publication Date: 2026-07-17WUXI STABLE-CHIP TECH CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUXI STABLE-CHIP TECH CO LTD
- Filing Date
- 2023-01-17
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing composite low-side drivers struggle to provide several ampere current pulses in a short time, resulting in slow switching of power MOSFETs.
Method used
The design integrates a composite low-side drive circuit and a high-side sampling circuit. By sampling and amplifying the voltage across resistor R0, and combining the control of a Schmitt trigger and a transistor, a fast current pulse output is achieved.
Benefits of technology
Providing several ampere current pulses within 100ns improves signal anti-interference capability, solves the signal distortion problem caused by grounding and noise interference in low-side sampling circuits, and facilitates compatibility with different application requirements.
✦ Generated by Eureka AI based on patent content.
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Figure CN116015270B_ABST
Abstract
本发明公开了一种带高边采样的复合型低侧驱动器，涉及集成电路领域，该带高边采样的复合型低侧驱动器包括：复合型低侧驱动电路，用于接收控制器的控制信号，驱动MOS管Q1导通状况；MOS管Q1，用于导通时，负载LOAD导通得电；负载LOAD，用于负载得电工作；本发明的有益效果是：本发明提出了复合型低侧驱动电路和高边采样电路，两种技术集成在单颗芯片里，外围元器件少易于实际生产应用，复合型低侧驱动电路解决驱动低内阻功率MOSFET时需要在100ns时间内提供几安培电流脉冲的问题，高边采样电路解决低边采样电路因接地和噪音干扰导致采样信号失真的问题，提高信号抗干扰性，便于兼容不同的应用需求。
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