在SiC衬底上生长III族氮化物薄膜的方法及应用
By employing NH3 pretreatment and periodic cyclic growth on SiC substrates, the problems of high dislocation density and easy cracking of group III nitride films on SiC substrates have been solved, realizing the growth of high-quality, crack-free thick group III nitride films, which are suitable for high-power power electronics and deep ultraviolet optoelectronic devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
- Filing Date
- 2022-12-08
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies for growing group III nitride films on SiC substrates face challenges such as high dislocation density and susceptibility to cracking, which limit the increase in film thickness. In particular, the low thermal conductivity and fixed electrical properties of sapphire substrates restrict their application in high-power devices.
The SiC substrate was pretreated with NH3 to increase the lattice step spacing. Combined with a two-step method of periodic cyclic growth, group III nitride films were grown on the SiC substrate by adjusting the V/III ratio. High and low V/III ratios were used alternately to control the residual stress of the film, reduce the dislocation density and reduce the risk of cracking.
It significantly increases the thickness of group III nitride films, reduces dislocation density, and controls residual stress to appropriate compressive stress or small tensile stress, ensuring that the film does not crack and improving the quality and thickness of the film.
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Figure CN116024656B_ABST