Method for simulating single event of field effect transistor, simulation device and electronic equipment

Abstract

The application discloses a single-particle simulation method of a field effect transistor, a simulation device and electronic equipment, and the simulation method comprises the following steps: performing linear energy transfer simulation on a selected single particle to perform single-particle incidence on a field effect transistor, and obtaining energy deposition data of the selected single particle in the field effect transistor; performing single-particle effect simulation of the field effect transistor according to the energy deposition data, and obtaining current distribution data of the field effect transistor; and determining single-particle burnout behavior of the field effect transistor according to the current distribution data. Compared with a traditional simulation scheme of single-particle burnout according to temperature, the simulation method has better convergence in simulating single-particle burnout characteristics, thereby improving the simulation efficiency of single-particle burnout and reducing resource occupation in simulation calculation.

Description

Technical Field

[0001] This application relates to the field of microelectronics technology, and in particular to a single-particle simulation method, simulation device, and electronic device for field-effect transistors. Background Technology

[0002] Single-event effects in microelectronic devices refer to a radiation effect that causes abnormal changes in the device's state when a single high-energy particle passes through the sensitive area of ​​the device. These effects include single-event upset, single-event lockout, single-event burnout, and single-event gate breakdown. For field-effect transistors (FETs), single-event burnout (SEB) refers to localized burnout at the drain-source junction of the FET caused by a single particle.

[0003] For metal-oxide-semiconductor field-effect transistors (MOS transistors), current single-event effect simulations are based on temperature. However, temperature simulations often suffer from convergence problems, either failing to converge or requiring a very long time to converge (to obtain the device temperature field after a single-event burn-out). This results in a significant reduction in simulation efficiency and an increase in computational resources. Summary of the Invention

[0004] This invention provides a single-event simulation method, simulation device, and electronic device for field-effect transistors, to solve or partially solve the technical problem that current temperature-based single-event burn-out simulations of field-effect transistors cannot converge quickly.

[0005] To address the aforementioned technical problems, according to an optional embodiment of the present invention, a single-event simulation method for field-effect transistors is provided, comprising:

[0006] Linear energy transfer simulation of a single-particle field-effect transistor was performed using a selected single-particle pair to obtain energy deposition data of the selected single particle in the field-effect transistor.

[0007] Based on the energy deposition data, a single-event simulation of the field-effect transistor is performed to obtain the current distribution data of the field-effect transistor.

[0008] Based on the current distribution data, the single-event burn-out behavior of the field-effect transistor is determined.

[0009] Optionally, the simulation of linear energy transfer by single-particle incident using a selected single-particle pair field-effect transistor includes:

[0010] According to the set simulation conditions, a linear energy transfer simulation of single-particle incident is performed on the structural model to obtain the energy deposition data; the structural model is the geometric model of the field-effect transistor; the energy deposition data includes the correspondence between incident time and energy deposition; the set simulation conditions include: controlling a selected single particle with a set particle energy to be incident from a set position of the structural model.

[0011] Furthermore, the set position is the gate of the structural model.

[0012] Optionally, the step of performing single-event effect simulation of the field-effect transistor based on the energy deposition data includes:

[0013] The field-effect transistor is controlled to be off, and the energy deposition data is used as input to perform single-event effect simulation on the single-event model to obtain the current distribution data; the single-event model is the model for single-event effect simulation of the field-effect transistor.

[0014] Optionally, determining the single-event burn-out behavior of the field-effect transistor based on the current distribution data includes:

[0015] Based on the current distribution data, the target potential difference is determined; the target potential difference is the potential difference between the base and collector of the parasitic transistor in the field-effect transistor.

[0016] Based on the target potential difference, the single-event burn-out triggering behavior of the field-effect transistor at the base is determined.

[0017] Optionally, determining the single-event burn-out behavior of the field-effect transistor based on the current distribution data includes:

[0018] Based on the current distribution data, the drain positive feedback current of the field-effect transistor is determined;

[0019] The single-event burn-out behavior of the field-effect transistor at the drain is determined based on the drain positive feedback current.

[0020] Optionally, the selected single particle is one of the following particles:

[0021] Protons, neutrons, electrons, and gamma particles.

[0022] Optionally, the field-effect transistor is a metal-oxide-semiconductor field-effect transistor.

[0023] According to another optional embodiment of the present invention, a single-event simulation device for a field-effect transistor is provided, comprising:

[0024] The linear energy transfer simulation module is used to perform linear energy transfer simulation of a single particle incident on a field-effect transistor using a selected single particle, and to obtain energy deposition data of the selected single particle in the field-effect transistor.

[0025] The single-event simulation module is used to perform single-event effect simulation of the field-effect transistor based on the energy deposition data, and to obtain the current distribution data of the field-effect transistor.

[0026] A determination module is used to determine the single-event burn-out behavior of the field-effect transistor based on the current distribution data.

[0027] According to another optional embodiment of the present invention, an electronic device is provided, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the simulation method described in any of the foregoing technical solutions.

[0028] Through one or more technical solutions of the present invention, the present invention has the following beneficial effects or advantages:

[0029] This invention discloses a single-event simulation method for field-effect transistors (FETs). First, a linear energy transfer simulation is performed on the FET to be simulated using a selected single particle, obtaining the energy deposition of the selected single particle in the FET. Then, single-event effect simulation is performed using the energy deposition to obtain the current distribution in the FET under single-event incident force. The single-event burn-off behavior of the FET is analyzed based on the current distribution data. Compared with traditional single-event burn-off simulation schemes based on temperature, the above-mentioned new scheme based on single-event burn-off current effectively solves the convergence problem of temperature simulation. It provides a simulation method with drain burn-off current data that reflects single-event burn-off characteristics better than temperature simulation, thereby improving the simulation efficiency of single-event burn-off and reducing the resource consumption of simulation calculations.

[0030] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention are described below. Attached Figure Description

[0031] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0032] Figure 1 A schematic flowchart of a single-particle simulation method for a field-effect transistor according to an embodiment of the present invention is shown.

[0033] Figure 2 A schematic diagram of a VDMOS device structure according to an embodiment of the present invention is shown;

[0034] Figure 3 Experimental and simulated IV curves of VDMOS according to an embodiment of the present invention are shown;

[0035] Figure 4 A schematic diagram of the diode simulation structure of a Geant4 model ESD circuit based on the materials and dimensions of each layer in VDMOS is shown according to an embodiment of the present invention.

[0036] Figure 5 A schematic diagram of the current distribution of a VDMOS device before proton incidence is shown according to an embodiment of the present invention;

[0037] Figure 6 A schematic diagram of the current distribution of a VDMOS device during proton incidence according to an embodiment of the present invention is shown;

[0038] Figure 7 A schematic diagram of the current distribution of a VDMOS device after a proton is incident for 0.05 ns according to an embodiment of the present invention is shown.

[0039] Figure 8 A schematic diagram of the current distribution of a VDMOS device after a proton is incident for 0.1 ns according to an embodiment of the present invention is shown.

[0040] Figure 9 A schematic diagram of the current distribution of a VDMOS device after a proton is incident for 0.2 ns according to an embodiment of the present invention is shown.

[0041] Figure 10 A schematic diagram of the parasitic transistor potential distribution in a VDMOS before and after proton incidence according to an embodiment of the present invention is shown;

[0042] Figure 11 An embodiment of the present invention is shown. Figure 10 A schematic diagram of the potential curve along the C2 scan line (from base to collector);

[0043] Figure 12 A schematic diagram showing the change in drain current before and after different proton energies are incident on a VDMOS according to an embodiment of the present invention is shown.

[0044] Figure 13 A schematic diagram of a single-particle simulation device for a field-effect transistor according to another embodiment of the present invention is shown;

[0045] Figure 14 A schematic diagram of an electronic device according to yet another embodiment of the present invention is shown. Detailed Implementation

[0046] To enable those skilled in the art to more clearly understand this application, the technical solution of this application is described in detail below with reference to the accompanying drawings and specific embodiments. Throughout this specification, unless otherwise specified, the terminology used herein should be understood as having the meaning commonly used in the art. Therefore, unless otherwise defined, all technical and scientific terms used herein have the same meaning as generally understood by those skilled in the art. In case of any conflict, this specification takes precedence. Unless otherwise specified, all devices, etc., used in this invention can be purchased commercially or prepared by existing methods.

[0047] To address the convergence problem inherent in traditional temperature-based single-event burn-out simulations of field-effect transistors (FETs), this invention provides a simulation method for the single-event effect of FETs. The overall approach is as follows:

[0048] A linear energy transfer simulation of a single-particle-impact field-effect transistor (FET) is performed using a selected single-particle pair to obtain energy deposition data of the selected single particle in the FET. Based on the energy deposition data, a single-particle effect simulation of the FET is performed to obtain current distribution data of the FET. Based on the current distribution data, the single-particle burn-out behavior of the FET is determined.

[0049] The simulation method described above breaks away from the conventional approach of single-event burn-out simulation based on temperature conditions, and instead provides a new approach based on current. Extensive practical experience demonstrates that this new scheme, based on single-event burn-out current, effectively solves the convergence problem in temperature-based simulations. Specifically, it provides a simulation method with drain burn-out current data that reflects single-event burn-out characteristics better than temperature-based simulations, thereby improving simulation efficiency and reducing computational resource consumption. This method is applicable to single-event simulations of field-effect transistors, especially metal-oxide-semiconductor field-effect transistors (MOSFETs).

[0050] The above solution will be further explained below with reference to specific implementation methods:

[0051] In an optional embodiment, see Figure 1 The simulation method in this embodiment includes:

[0052] S101: A linear energy transfer simulation of a single-particle-particle-transistor is performed using a selected single-particle-particle-transistor to obtain the energy deposition data of the selected single particle in the field-effect transistor.

[0053] It should be noted that, in linear energy transfer simulations, a single-particle source refers to a single type of high-energy particle or high-energy ray source incident on the field-effect transistor. For example, single-particle sources that can be used to simulate field-effect transistors include protons, neutrons, electrons, and gamma particles.

[0054] Linear energy transfer simulation is a simulation method that simulates the interaction between irradiated / radiated particles and field-effect transistors (FETs). Software that can be used for linear energy transfer simulation of FETs includes Geant4, EGS4, and MCNP, among others, without specific limitations here.

[0055] The basic process of linear energy transfer simulation is as follows: using the field-effect transistor to be simulated as the detector, the structural model (geometric model) of the detector is defined in the simulation software, which can be defined according to the hierarchical structure of the field-effect transistor (such as gate, source, insulating layer, etc.); then the corresponding material is defined for each layer of the structure; then the single-particle source to be incident is selected (i.e., the single particle is selected), and the simulation conditions are set; then, according to the set simulation conditions, the linear energy transfer simulation of the selected single particle incident is performed on the structural model to obtain the energy deposition data; the energy deposition data includes the correspondence between the incident particle energy and the energy deposition, specifically, the energy deposition data of the selected single particle in each layer of material in the structural model.

[0056] The simulation conditions are set by controlling a selected single particle with a set particle energy to be incident from a set position on the structural model. The set position can be the gate, source, or other positions; the set angle can be perpendicular or near-perpendicular incident; no specific limitations are imposed on these conditions. The set particle energy is the energy of the incident single particle, which can be determined comprehensively based on the type of the selected single particle, the incident device, and the designer's simulation requirements; it is not mandatory here. For example, if the single particle is a proton and the incident device is a power MOSFET, the proton energy can be 0.1–320 MeV.

[0057] The simulation conditions also include: performing linear energy transfer simulations under the conditions of selecting a single particle, controlling multiple particle energies, and maintaining multiple incident times. This yields a set of energy deposition data for each layer of material in the device under different energies and incident times.

[0058] S102: Based on the energy deposition data, perform single-event simulation of the field-effect transistor to obtain the current distribution data of the field-effect transistor;

[0059] After obtaining the energy deposition data generated by a single-event incident event, a single-event effect simulation was performed. The process of the single-event effect simulation is as follows:

[0060] A single-event model of the field-effect transistor is constructed in a single-event effect simulation software. The single-event effect simulation software can be a TCAD software with two-dimensional or three-dimensional semiconductor process simulation and device simulation functions, such as Sentaurus, Silvaco, etc., which is not specifically limited here. Then, the energy deposition data is input into the single-event model to perform single-event effect simulation, thereby obtaining the current distribution diagram of the field-effect transistor caused by single-event incident.

[0061] In single-event effect simulation, optionally, the field-effect transistor (FET) can be controlled to be off. Using the energy deposition data as input, the single-event model is simulated to obtain the current distribution data. The reason for setting the FET corresponding to the single-event model to the off state during simulation is that single-event events in power devices generally occur in the device's off state. This is achieved by setting the source and drain bias voltages in the simulation software to keep the FET in the off state.

[0062] S103: Determine the single-event burn-out behavior of the field-effect transistor based on the current distribution data.

[0063] Specifically, the current distribution data includes the current and potential distributions at various locations within the field-effect transistor (FET). After obtaining the current distribution data, the single-event burn-out behavior of the FET under selected single-event incidence can be analyzed. Single-event burn-out behavior indicates whether the parasitic transistor within the FET is activated under selected single-event type, single-event energy, and incident time conditions. If the parasitic transistor is activated, single-event burn-out occurs.

[0064] One possible scheme for determining single-particle burn-up behavior is as follows:

[0065] Based on the current distribution data, a target potential difference is determined; the target potential difference is the potential difference between the base and collector of the parasitic transistor in the field-effect transistor; based on the target potential difference, the single-event burn-out triggering behavior of the field-effect transistor at the base is determined. The parasitic transistor can be located at the source of the field-effect transistor.

[0066] For example, in a simulation, a single particle with a set particle energy is incident from the source of a field-effect transistor. After a certain period of time, the potential difference between the base and collector of the parasitic transistor at the source exceeds a certain value, causing the parasitic transistor to turn on. Then, electrons from the source of the field-effect transistor are injected into the collector through the base, resulting in an increase in the current density at the base. The excessive local current density causes the device to burn out due to a single particle.

[0067] Another alternative scheme for determining single-event burn-up behavior is:

[0068] Based on the current distribution data, the drain positive feedback current of the field-effect transistor is determined; based on the drain positive feedback current, the single-event burn-out behavior of the field-effect transistor at the drain is determined.

[0069] For example, in another simulation, a single particle with a set particle energy was incident on the source of a field-effect transistor, and the drain current was found to increase. After a certain period of time, the parasitic transistor turned on, and the drain current gradually decreased. Because the single particle incident caused the field-effect transistor to excite the parasitic transistor and form a positive feedback of drain current under the off-state bias, the continuous increase of the positive feedback of current will lead to single particle burnout of the device.

[0070] For the sake of clarity, the following implementation will use a vertically double-diffused field-effect transistor (VDMOS) as an example to illustrate the above scheme. After understanding the specific implementation principle, those skilled in the art can reuse it to other field-effect transistor devices, such as MOS transistors and VMOS transistors.

[0071] The structure of the VDMOS device involved in this embodiment is as follows: Figure 2 As shown, Figure 2 This diagram illustrates a P-type VDMOS with sources located on both sides, doped with boron at a concentration of 2e20cm⁻¹. -3 The EPI is a p-type epitaxial layer, and the drain below the EPI is boron-doped with a concentration of 1e18 cm⁻¹. -3 Nbase represents the arsenic-doped N-type base region, and N+ represents the arsenic-doped region with a concentration of 1e19cm⁻¹. -3 The channel region. Experimental and simulation results of P-type VDMOS I d V g The fitted curve is as follows Figure 3 As shown.

[0072] This embodiment uses protons as the particle source for single-event effect simulation, with proton energies ranging from 0.1 to 320 MeV. A structural model with the same material thickness as each layer in the VDMOS device is established in Geant4 software, such as... Figure 4As shown in Table 1, during simulation, protons of different energies were controlled to be perpendicularly incident on the VDMOS from the gate, thereby obtaining energy deposition data of protons of different energies in each layer of the VDMOS material.

[0073] Table 1: Simulation data of energy deposition for each layer of VDMOS with different proton energies perpendicularly incident from the gate.

[0074]

[0075] A single-event model was established in Sentaurus TCAD software. The energy deposition data in Table 1 was input into the single-event model to simulate the single-event effect. The simulation results are as follows: Figures 5-10 As shown; where, Figures 5-9 Total Current Density represents the current distribution in a VDMOS device due to a single-particle incident event. Figure 10 Electrostatic potential represents the electrostatic potential, derived from the current distribution within the VDMOS device. In N-VDMOS simulations, before a single-event event, the drain bias is set to 8V and the gate bias to -5V, placing the device in the off state. This setting is because single-event burnout of power devices often occurs in the off state. When a particle is incident on the device gate, a large number of electron-hole pairs are generated due to ionization. These electron-hole pairs recombine rapidly, resulting in a significant current along the incident path. The remaining electrons and holes, under the influence of the electric field and concentration gradient, drift and diffuse towards the drain region. Parasitic transistors in VDMOS (such as...) Figure 10 (As shown), the source is the highly doped N-region, corresponding to the source of the parasitic transistor; the drain is the lightly doped N-region, corresponding to the collector of the parasitic transistor; the P-doped region is the base region. When the VDMOS is biased at -5V gate and 8V drain, the collector of the parasitic transistor is connected to a high voltage, and the source is connected to 0 voltage, that is, the emitter of the parasitic transistor is connected to 0 voltage. The diffusion and drift flow of electrons and holes causes the potential change of the base region.

[0076] To investigate whether the base potential difference can turn on the parasitic transistor within a VDMOS, Figure 10 Take the C2 scan line (shown as a dashed line) from the base to the collector, collect data along the scan line, and plot the potential curve, as shown. Figure 11 As shown (in) Figure 11 In the diagram, the horizontal axis X represents the displacement of the data points on the scan line. Figure 11It can be seen that the base potential difference of the parasitic transistor increases significantly starting 0.05 ns (nanoseconds) after proton incidence; the potential increases to 0.7 V at 0.1 ns after proton incidence, and then the potential continues to increase; this indicates that the parasitic transistor turns on when the potential difference is greater than 0.7 V 0.1 ns after particle incidence; after the parasitic transistor turns on, N-type heavily doped source electrons are injected into the collector through the base. During this process, the base current density increases, and the excessive local current density causes the device to burn out due to a single particle.

[0077] Considering that protons of different energies may cause different single-event effects, a large number of TCAD simulations were performed based on the energy deposition values ​​listed in Table 1. The changes in VDMOS drain current over time caused by protons of different energies were summarized, such as... Figure 12 As shown (in) Figure 12 In the figure, the horizontal axis Time represents the single-particle incident time, and the vertical axis Id represents the positive feedback current density; based on this, the influence of particle energy on single-particle burn-up is analyzed. Figure 12 The diagram shows the drain current variations for five different incident proton energies, ranging from 0.3 to 320 MeV. Figure 12 It can be clearly observed that single-particle burnout occurs after incident, i.e., the drain positive feedback phenomenon: as the energy increases, the drain current gradually decreases after the parasitic transistor is turned on. It can be concluded that as the proton energy increases, the proton penetration power increases, the energy deposition LET value decreases, and the number of ionized electron-hole pairs decreases. Under the action of an external electric field, the number of ionized electron-hole pairs decreases due to carrier movement, and the rate of increase of the subsequent current decreases. Therefore, it can be concluded that no matter how large the proton energy is, it can excite the parasitic transistor in the device and form a drain current positive feedback under the action of off-state bias. However, the larger the proton energy, the slower the rate of increase of the positive feedback current. If this positive feedback current continues to increase, it will lead to device burnout.

[0078] Based on the same inventive concept as the foregoing embodiments, in another alternative embodiment, such as Figure 13 As shown, a single-event simulation device for field-effect transistors is provided, comprising:

[0079] The linear energy transfer simulation module 131 is used to perform linear energy transfer simulation of single-particle incident on a field-effect transistor using a selected single particle, and to obtain energy deposition data of the selected single particle in the field-effect transistor.

[0080] The single-event simulation module 132 is used to perform single-event effect simulation of the field-effect transistor based on the energy deposition data, and obtain the current distribution data of the field-effect transistor.

[0081] The determination module 133 is used to determine the single-event burn-out behavior of the field-effect transistor based on the current distribution data.

[0082] Optionally, the linear energy transfer simulation module 131 is used for:

[0083] According to the set simulation conditions, a linear energy transfer simulation of single-particle incident is performed on the structural model to obtain the energy deposition data; the structural model is the geometric model of the field-effect transistor; the energy deposition data includes the correspondence between incident time and energy deposition; the set simulation conditions include: controlling a selected single particle with a set particle energy to be incident from a set position of the structural model.

[0084] Furthermore, the set position is the gate of the structural model.

[0085] Optionally, the single-particle simulation module 132 is used for:

[0086] The field-effect transistor is controlled to be off, and the energy deposition data is used as input to perform single-event effect simulation on the single-event model to obtain the current distribution data; the single-event model is the model for single-event effect simulation of the field-effect transistor.

[0087] Optionally, the determining module 133 is used for:

[0088] Based on the current distribution data, the target potential difference is determined; the target potential difference is the potential difference between the base and collector of the parasitic transistor in the field-effect transistor.

[0089] Based on the target potential difference, the single-event burn-out triggering behavior of the field-effect transistor at the base is determined.

[0090] Optionally, the determining module 133 is used for:

[0091] Based on the current distribution data, the drain positive feedback current of the field-effect transistor is determined;

[0092] The single-event burn-out behavior of the field-effect transistor at the drain is determined based on the drain positive feedback current.

[0093] Based on the same inventive concept as the foregoing embodiments, in yet another optional embodiment, an electronic device is provided, such as... Figure 14 As shown, it includes a memory 1410, a processor 1420, and a computer program 1411 stored in the memory 1410 and executable on the processor 1420. When the processor 1420 executes the computer program 1411, it implements any of the determination methods described in the above embodiments.

[0094] Through one or more embodiments of the present invention, the present invention has the following beneficial effects or advantages:

[0095] This invention discloses a single-event simulation method, simulation device, and electronic device for field-effect transistors (FETs). The method involves first performing linear energy transfer simulation on the FET using a selected single particle to obtain the energy deposition of the selected single particle within the FET. Then, single-event effect simulation is performed using the energy deposition to obtain the current distribution within the FET under single-event incident conditions. The single-event burn-off behavior of the FET is analyzed based on the current distribution data. Compared to traditional single-event burn-off simulation schemes based on temperature, this novel scheme based on single-event burn-off current effectively solves the convergence problem of temperature-based simulations. It provides a simulation method with better convergence than temperature-based simulations, reflecting single-event burn-off characteristics through drain burn-off current data, thereby improving the simulation efficiency and reducing the resource consumption of the simulation computation.

[0096] Although preferred embodiments of this application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.

[0097] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A single-particle simulation method for a field-effect transistor, characterized in that, The simulation method includes: Linear energy transfer simulation of a field-effect transistor is performed using a selected single-particle object to obtain energy deposition data of the selected single particle in the field-effect transistor. The energy deposition data includes simulation data of energy deposition of each layer of material in the field-effect transistor under the action of selected single particles with various set energies. Based on the energy deposition data, a single-event simulation of the field-effect transistor is performed to obtain the current distribution data of the field-effect transistor. This includes: inputting the energy deposition simulation data under the action of a selected single particle at each set energy into a pre-built single-event model, performing a single-event simulation of the field-effect transistor, and obtaining the current distribution data of the field-effect transistor under the action of a selected single particle at each set energy. The current distribution data includes the current distribution and potential distribution of the field-effect transistor before, during, and after the selected single particle incident, and after different incident times. Based on the current distribution data, the single-particle burn-out behavior of the field-effect transistor is determined, including: acquiring data from the scan line from the base to the collector of the parasitic transistor in the potential distribution, and plotting the potential curves before, during, and after the selected single particle incident, to determine the target potential difference between the base and collector of the parasitic transistor based on the potential curves; analyzing the single-particle burn-out behavior of the field-effect transistor by determining whether the target potential difference can turn on the parasitic transistor; and obtaining the drain current of the field-effect transistor as a function of time under the action of selected single particles with different set energies based on the current distribution under the action of selected single particles with different set energies.

2. The simulation method as described in claim 1, characterized in that, The simulation of linear energy transfer by single-particle incident using a selected single-particle pair field-effect transistor includes: According to the set simulation conditions, a linear energy transfer simulation of single-particle incident is performed on the structural model to obtain the energy deposition data; the structural model is the geometric model of the field-effect transistor; the energy deposition data includes the correspondence between incident time and energy deposition; the set simulation conditions include: controlling a selected single particle with a set particle energy to be incident from a set position of the structural model.

3. The simulation method as described in claim 2, characterized in that, The designated position is the gate of the structural model.

4. The simulation method as described in claim 1, characterized in that, The step of performing single-event effect simulation of the field-effect transistor based on the energy deposition data further includes: Before being subjected to a single-event event, the field-effect transistor is controlled to be in the off state; the single-event model is a model for simulating the single-event effect of the field-effect transistor.

5. The simulation method as described in claim 1, characterized in that, Determining the single-event burn-out behavior of the field-effect transistor based on the current distribution data includes: Based on the current distribution data, the drain positive feedback current of the field-effect transistor is determined; The single-event burn-out behavior of the field-effect transistor at the drain is determined based on the drain positive feedback current.

6. The simulation method as described in claim 1, characterized in that, The selected single particle is one of the following particles: Protons, neutrons, electrons, and gamma particles.

7. The simulation method as described in claim 1, characterized in that, The field-effect transistor is a metal-oxide-semiconductor field-effect transistor.

8. A single-particle simulation device for a field-effect transistor, characterized in that, The simulation device includes: The linear energy transfer simulation module is used to perform linear energy transfer simulation of a field-effect transistor with a selected single particle incident on it, and to obtain the energy deposition data of the selected single particle in the field-effect transistor. The energy deposition data includes the energy deposition simulation data of each layer of material in the field-effect transistor under the action of a selected single particle with a variety of different set energies. A single-event simulation module is used to perform single-event effect simulation of the field-effect transistor based on the energy deposition data, and to obtain the current distribution data of the field-effect transistor. The module includes: inputting the energy deposition simulation data under the action of a selected single particle at each set energy into a pre-built single-event model, performing single-event effect simulation of the field-effect transistor, and obtaining the current distribution data of the field-effect transistor under the action of a selected single particle at each set energy. The current distribution data includes the current distribution and potential distribution of the field-effect transistor before, during, and after the selected single particle incident. The determination module is used to determine the single-event burn-out behavior of the field-effect transistor based on the current distribution data, including: acquiring data on the scan line from the base to the collector of the parasitic transistor in the potential distribution, and plotting the potential curves before, during, and after the selected single-event particle incident, to determine the target potential difference between the base and collector of the parasitic transistor based on the potential curves; analyzing the single-event burn-out behavior of the field-effect transistor by determining whether the target potential difference can turn on the parasitic transistor; and obtaining the drain current variation curve of the field-effect transistor over time under the action of selected single particles with different set energies based on the current distribution under the action of selected single particles with different set energies.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the simulation method as described in any one of claims 1 to 7.

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