Three-dimensional phase change memory 1s1r model with monte carlo simulation function

Abstract

This invention relates to a three-dimensional phase-change memory (1S1R) model with Monte Carlo simulation capabilities, comprising a device model including a series-connected gate transistor model and a phase-change memory model, and further including: a voltage module for providing voltage to the gate transistor model and the phase-change memory model; a parameter distribution module for providing the dimensions of the gate transistor model and the phase-change memory model with statistical characteristics; a current module for calculating the current of the device model based on its current state and the voltage across it; and a state module for determining the current state of the device model based on its previous state, current, or temperature. This invention can simulate the statistical characteristics of the electrical properties of a three-dimensional phase-change memory (1S1R) structure.

Description

Technical Field

[0001] This invention relates to the field of microelectronics technology, and in particular to a three-dimensional phase-change memory (1S1R) model with Monte Carlo simulation capabilities. Background Technology

[0002] Three-dimensional integrated phase-change memory (PCM) can reduce the effective footprint of cells and significantly increase storage density, making it one of the best choices for memory-class memory. In three-dimensional PCM, the PCM and the OTS selector typically form a 1S1R memory cell. The PCM and OTS selector must have compatible electrical characteristics; otherwise, SET / RESET operations will fail. Therefore, an accurate 1S1R model is a prerequisite for simulating memory cell characteristics and designing peripheral circuits. However, previously proposed 1S1R models rarely considered the statistical properties and Monte Carlo functions of the parameters, reducing the reliability of circuit design. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a three-dimensional phase change memory 1S1R model with Monte Carlo simulation function, which can simulate the statistical characteristics of the electrical characteristics of the three-dimensional phase change memory 1S1R structure.

[0004] The technical solution adopted by this invention to solve its technical problem is as follows: A three-dimensional phase-change memory (1S1R) model with Monte Carlo simulation function is provided, including a device model, which includes a series-connected gate transistor model and a phase-change memory model. The model further includes: a voltage module for providing voltage to the gate transistor model and the phase-change memory model; a parameter distribution module for providing the dimensions of the gate transistor model and the phase-change memory model with statistical characteristics; a current module for calculating the current of the device model based on its current state and the voltage across its terminals; and a state module for determining the current state of the device model based on its previous state, current, or temperature.

[0005] The voltage module includes a gate transistor model voltage unit and a phase change memory model voltage unit; the gate transistor model voltage unit is used to provide voltage to the gate transistor model, and the phase change memory model voltage unit is used to provide voltage to the phase change memory model.

[0006] The state module includes a gate transistor model state unit and a phase change memory model state unit; the gate transistor model state unit determines the current state of the OTS gate transistor model based on the previous state of the gate transistor model and the current current; the phase change memory model state unit determines the current state of the phase change memory model based on the previous state of the phase change memory model and the current temperature, wherein the current temperature of the phase change memory model is calculated based on the current of the phase change memory model.

[0007] When the state of the selector model at the previous moment was off, the selector model state unit changes the state of the selector model to on when the current current of the selector model is greater than the threshold current, and maintains the state of the selector model when the current current of the selector model is less than or equal to the threshold current; when the state of the selector model at the previous moment was on, the selector model state unit changes the state of the selector model to off when the current current of the selector model is less than the holding current, and maintains the state of the selector model when the current current of the selector model is greater than or equal to the holding current.

[0008] The phase change memory model state unit converts the phase change memory model to a high resistance state when the phase change memory model is in a low resistance state and the temperature of the phase change memory model is greater than the melting temperature; otherwise, it maintains the low resistance state. The phase change memory model state unit converts the phase change memory model to a low resistance state when the phase change memory model is in a high resistance state and the current temperature of the phase change memory model is greater than the crystallization temperature and less than the melting temperature; otherwise, it maintains the high resistance state.

[0009] The current module includes a gate transistor model current unit and a phase change memory model current unit. The gate transistor model current unit calculates the current of the gate transistor model based on the current state of the gate transistor model and the voltage across its terminals. The phase change memory model current unit calculates the current of the phase change memory model based on the current state of the phase change memory model and the voltage across its terminals.

[0010] The current unit of the selector model, when the selector model is in the off state, through... Calculate the current of the selected transistor model, and when the selected transistor model is in the conducting state, through... Calculate the current of the selected transistor model; where I OTS Let q be the current in the gate transistor model, q be the charge, A be the area of ​​the gate transistor model, and N be the area of ​​the gate transistor model. T Let E be the deep trap density, Δz be the trap distance, τ0 be the escape time of the captured electron, and E be the deep trap density. C The activation energy is given by k, Boltzmann constant is given by T, and V is given by V. OTSLet d be the voltage of the selected transistor model. MC R represents the thickness of the gate tube model with statistical properties. L The resistance value is the value of the selected tube model when it is in the conducting state.

[0011] The current unit of the phase-change memory model, when the phase-change memory model is in a high-resistance state, passes through... Calculate the current of the phase-change memory model, and when the phase-change memory model is in a low-resistance state, through... Calculate the current of the phase-change memory model; where I PCM V represents the current in the phase-change memory model. OA and k OA R represents the completely amorphous linear parameters of the phase-change memory model. A V represents the resistance of the completely amorphous phase-change memory model. PCM L represents the voltage of the phase-change memory model. MC V represents the length of the phase-change memory model with statistical properties. OC R is the fully crystalline linear parameter of the phase change memory model. C The resistance value is the fully crystalline resistance value of the phase change memory model.

[0012] The completely amorphous resistance of the phase change memory model The fully crystalline resistance of the phase change memory model Where, ρ A ρ is the amorphous resistivity of the phase change memory model. C S is the crystalline resistivity of the phase change memory model. MC This represents the base area of ​​the phase-change memory model with statistical properties.

[0013] The dimensions of the gate tube model and phase change memory model with statistical characteristics provided by the parameter distribution module include: the thickness of the gate tube model with statistical characteristics, the length of the phase change memory model with statistical characteristics, and the bottom area of ​​the phase change memory model with statistical characteristics.

[0014] Beneficial effects

[0015] By adopting the above-mentioned technical solution, this invention has the following advantages and positive effects compared with the prior art: This invention simplifies the complexity of Monte Carlo simulation and improves modeling efficiency by introducing statistical characteristics of device dimensions. By adjusting the device parameters and statistical distribution, this invention can efficiently simulate the statistical distribution of the electrical characteristics of a three-dimensional phase-change memory (1S1R), thereby helping circuit designers to reproduce the true state of the device in SPICE-level circuit simulation and increasing the reliability of circuit design. Attached Figure Description

[0016] Figure 1 This is a framework diagram of the three-dimensional phase change memory 1S1R model with Monte Carlo simulation function according to an embodiment of the present invention.

[0017] Figure 2 This is a simulation diagram of the IV characteristics of the three-dimensional phase change memory 1S1R model with Monte Carlo simulation function according to an embodiment of the present invention.

[0018] Figure 3 This is a simulation diagram of the threshold voltage distribution of the three-dimensional phase change memory 1S1R model with Monte Carlo simulation function according to an embodiment of the present invention. Detailed Implementation

[0019] The present invention will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, it should be understood that after reading the teachings of this invention, those skilled in the art can make various alterations or modifications to the invention, and these equivalent forms also fall within the scope defined by the appended claims.

[0020] The embodiments of the present invention relate to a three-dimensional phase-change memory (1S1R) model with Monte Carlo simulation capabilities, including a device model comprising a series-connected gate transistor model and a phase-change memory model. For example... Figure 1 As shown, the three-dimensional phase-change memory 1S1R model also includes: a voltage module for providing voltage to the gate transistor model and the phase-change memory model; a parameter distribution module for providing the dimensions of the gate transistor model and the phase-change memory model with statistical characteristics; a current module for calculating the current of the device model based on the current state of the device model and the voltage across its terminals; and a state module for determining the current state of the device model based on the previous state of the device model, the current of the device model, or the temperature of the device model.

[0021] The dimensions of the gate tube model and phase change memory model with statistical characteristics provided by the parameter distribution module in this embodiment include: the thickness of the gate tube model with statistical characteristics, the length of the phase change memory model with statistical characteristics, and the bottom area of ​​the phase change memory model with statistical characteristics.

[0022] The voltage module in this embodiment includes a gate transistor model voltage unit and a phase-change memory model voltage unit. The gate transistor model voltage unit is used to provide voltage to the gate transistor model, and the phase-change memory model voltage unit is used to provide voltage to the phase-change memory model. The sum of the voltages across the gate transistor model and the voltages across the phase-change memory model is the voltage across the three-dimensional phase-change memory 1S1R model.

[0023] The current module in this embodiment includes a gate transistor model current unit and a phase change memory model current unit. The gate transistor model current unit calculates the current of the gate transistor model based on the current state of the gate transistor model and the voltage across its terminals. The phase change memory model current unit calculates the current of the phase change memory model based on the current state of the phase change memory model and the voltage across its terminals.

[0024] The current unit of the selector model, when the selector model is in the off state, through... Calculate the current of the selected transistor model, and when the selected transistor model is in the conducting state, through... Calculate the current of the selected transistor model; where I OTS Let q be the current in the gate transistor model, q be the charge, A be the area of ​​the gate transistor model, and N be the area of ​​the gate transistor model. T Let E be the deep trap density, Δz be the trap distance, τ0 be the escape time of the captured electron, and E be the deep trap density. C The activation energy is given by k, Boltzmann constant is given by T, and V is given by V. OTS Let d be the voltage of the selected transistor model. MC R represents the thickness of the gate tube model with statistical properties. L The resistance value is the value of the selected tube model when it is in the conducting state.

[0025] The current unit of the phase-change memory model, when the phase-change memory model is in a high-resistance state, passes through... Calculate the current of the phase-change memory model, and when the phase-change memory model is in a low-resistance state, through... Calculate the current of the phase-change memory model; where I PCM V represents the current in the phase-change memory model. OA and k OA R represents the completely amorphous linear parameters of the phase-change memory model. A V represents the resistance of the completely amorphous phase-change memory model. PCM L represents the voltage of the phase-change memory model. MC V represents the length of the phase-change memory model with statistical properties. OC R is the fully crystalline linear parameter of the phase change memory model. C The resistance value is the fully crystalline resistance value of the phase change memory model.

[0026] Among them, the completely amorphous resistance value of the phase change memory model The fully crystalline resistance of the phase change memory model Where, ρ A ρ is the amorphous resistivity of the phase change memory model. C S is the crystalline resistivity of the phase change memory model.MC This represents the base area of ​​the phase-change memory model with statistical properties.

[0027] The state module in this embodiment includes a gate transistor model state unit and a phase change memory model state unit. The gate transistor model state unit determines the current state of the OTS gate transistor model based on the previous state of the gate transistor model and the current current. The phase change memory model state unit determines the current state of the phase change memory model based on the previous state of the phase change memory model and the current temperature. The current temperature of the phase change memory model is calculated based on the current of the phase change memory model.

[0028] When the state of the selector model at the previous moment was off, the selector model state unit changes the state of the selector model to on when the current current of the selector model is greater than the threshold current, and maintains the state of the selector model when the current current of the selector model is less than or equal to the threshold current; when the state of the selector model at the previous moment was on, the selector model state unit changes the state of the selector model to off when the current current of the selector model is less than the holding current, and maintains the state of the selector model when the current current of the selector model is greater than or equal to the holding current.

[0029] The phase change memory model state unit converts the phase change memory model to a high resistance state when the phase change memory model is in a low resistance state and the temperature of the phase change memory model is greater than the melting temperature; the phase change memory model state unit converts the phase change memory model to a low resistance state when the phase change memory model is in a high resistance state and the current temperature of the phase change memory model is greater than the crystallization temperature and less than the melting temperature.

[0030] Figure 2 The above are simulation diagrams of the IV characteristics of the three-dimensional phase-change memory 1S1R model according to an embodiment of the present invention, including two cases of phase-change memory model: low resistance and high resistance. Figure 3 The simulation diagram of the threshold voltage distribution corresponding to the embodiment of the present invention shows that the three-dimensional phase change memory 1S1R model of this embodiment can help circuit designers restore the real situation of the device in SPICE-level circuit simulation, thereby increasing the reliability of circuit design.

Claims

1. A three-dimensional phase change memory 1S1R model with Monte Carlo simulation function, comprising a device model, the device model comprising a series of a pass transistor model and a phase change memory model, characterized in that, Also includes: A voltage module is used to provide voltage to the gate transistor model and the phase change memory model; a parameter distribution module is used to provide the dimensions of the gate transistor model and the phase change memory model with statistical characteristics. The parameters provided by the parameter distribution module include the following dimensions for the gate model and phase-change memory model with statistical characteristics: the thickness of the gate model with statistical characteristics, the length of the phase-change memory model with statistical characteristics, and the bottom area of ​​the phase-change memory model with statistical characteristics; a current module for calculating the current of the device model based on the current state of the device model and the voltage across its terminals; and a state module for determining the current state of the device model based on the previous state of the device model, the current of the device model, or the temperature of the device model. The current module includes a gate transistor model current unit and a phase change memory model current unit. The gate transistor model current unit calculates the current of the gate transistor model based on the current state of the gate transistor model and the voltage across its terminals. The phase change memory model current unit calculates the current of the phase change memory model based on the current state of the phase change memory model and the voltage across its terminals. The current unit of the selector model, when the selector model is in the off state, through... Calculate the current of the selected transistor model, and when the selected transistor model is in the conducting state, through... Calculate the current of the selected transistor model; where, To select the current of the tube model, The charge carries a certain amount of charge. The area of ​​the selected tube model is... For deep trap density, The distance to the trap. For the time it took for the captured electronic device to escape, To activate energy, Boltzmann's constant, For temperature, The voltage of the selected transistor model is... The thickness of the gate tube model with statistical properties. The resistance value of the selected tube model when it is in the conducting state; The current unit of the phase-change memory model, when the phase-change memory model is in a high-resistance state, passes through... Calculate the current of the phase-change memory model, and when the phase-change memory model is in a low-resistance state, through... Calculate the current of the phase-change memory model; where, The current of the phase-change memory model is... and The parameters of the phase change memory model are completely amorphous and linear. The resistance value of the phase-change memory model in its completely amorphous state is given. The voltage of the phase-change memory model is [value]. The length of the phase-change memory model with statistical properties. The parameters of the phase change memory model are the fully crystalline linear parameters. The resistance value of the phase change memory model in its fully crystalline state is given. The completely amorphous resistance of the phase change memory model The fully crystalline resistance of the phase change memory model ,in, The amorphous resistivity of the phase change memory model is given. The crystalline resistivity of the phase change memory model is given. This represents the base area of ​​the phase-change memory model with statistical properties.

2. The three-dimensional phase-change memory 1S1R model with Monte Carlo simulation function according to claim 1, characterized in that, The voltage module includes a gate transistor model voltage unit and a phase change memory model voltage unit; the gate transistor model voltage unit is used to provide voltage to the gate transistor model, and the phase change memory model voltage unit is used to provide voltage to the phase change memory model.

3. The three-dimensional phase-change memory 1S1R model with Monte Carlo simulation function according to claim 1, characterized in that, The state module includes a gate transistor model state unit and a phase change memory model state unit; the gate transistor model state unit determines the current state of the gate transistor model based on the previous state of the gate transistor model and the current current; the phase change memory model state unit determines the current state of the phase change memory model based on the previous state of the phase change memory model and the current temperature, wherein the current temperature of the phase change memory model is calculated based on the current of the phase change memory model.

4. The three-dimensional phase-change memory 1S1R model with Monte Carlo simulation function according to claim 3, characterized in that, When the state of the selector model at the previous moment was off, the selector model state unit changes the state of the selector model to on when the current current of the selector model is greater than the threshold current, and maintains the state of the selector model when the current current of the selector model is less than or equal to the threshold current; when the state of the selector model at the previous moment was on, the selector model state unit changes the state of the selector model to off when the current current of the selector model is less than the holding current, and maintains the state of the selector model when the current current of the selector model is greater than or equal to the holding current.

5. The three-dimensional phase-change memory 1S1R model with Monte Carlo simulation function according to claim 3, characterized in that, The phase change memory model state unit converts the phase change memory model to a high resistance state when the phase change memory model is in a low resistance state and the temperature of the phase change memory model is greater than the melting temperature; otherwise, it maintains the low resistance state. The phase change memory model state unit converts the phase change memory model to a low resistance state when the phase change memory model is in a high resistance state and the current temperature of the phase change memory model is greater than the crystallization temperature and less than the melting temperature; otherwise, it maintains the high resistance state.

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