A method for simulating I-V curve of crystalline silicon cell photovoltaic module

By building a photovoltaic module circuit model in LTspice software and considering the data and electrical mismatch of each cell, the problem of parameter inconsistency in photovoltaic module simulation was solved, achieving higher accuracy in module power calculation and cost savings.

CN116029248BActive Publication Date: 2026-06-19JIANGSU RUNERGY CENTURY PHOTOVOLTAIC TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
JIANGSU RUNERGY CENTURY PHOTOVOLTAIC TECH CO LTD
Filing Date
2023-02-28
Publication Date
2026-06-19

AI Technical Summary

⚠Technical Problem

Existing technologies fail to effectively account for the inconsistencies in parameters and electrical mismatches of individual cell units when simulating the output power of photovoltaic modules, resulting in significant discrepancies between the calculated results and actual production.

⚗Method used

A photovoltaic module circuit model was built using LTspice software. By using a dual-diode equivalent circuit model and adjusting parameters, the data of each cell was considered, and the module IV curve was calculated, including the effects of solder ribbon, busbar and junction box resistance.

🎯Benefits of technology

It improves the accuracy and precision of simulation results, shortens test time and cost, and provides more precise guidance for component power enhancement.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention provides a method for simulating the I-V curve of a crystalline silicon photovoltaic module. It establishes an equivalent diode circuit model of the crystalline silicon cell and calculates the equivalent diode parameters. Based on the module layout and equivalent diode parameters, an equivalent circuit model of the module is constructed. The increased resistance of each component is calculated. Small cell modules are packaged into a single module, and the current gain of each small cell is determined, thus obtaining the current gain from the cell to the module. Based on the increased resistance and current gain of each component, the changes in resistance and current from the cell to the module are calculated. Based on the cell voltage, an appropriate scanning voltage is applied to begin the simulation and obtain the I-V curve of the module, as well as the output power and efficiency. The electrical performance data of all small cell modules are incorporated into the calculation, taking into account the potential impact of electrical mismatch. Given the I-V information for each cell module, the computational load is small, significantly reducing experimental time and cost.
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