Transistor with an all-around outer base
By employing a surrounding outer base structure and silicide contacts in a heterojunction bipolar transistor, the problems of high capacitance and high resistance are solved, achieving low base resistance and high frequency characteristics, thus improving device performance.
CN116031295BActive Publication Date: 2026-07-17GLOBALFOUNDRIES SINGAPORE PTE LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GLOBALFOUNDRIES SINGAPORE PTE LTD
- Filing Date
- 2022-10-19
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Current integration methods used to manufacture heterojunction bipolar transistors result in high collector-base capacitance and high base resistance, limiting improvements in device scaling performance, particularly in power amplifiers and cellular applications.
Method used
The structure employs a surrounding outer base, which forms an outer base above the inner base and surrounds the emitter region. Combined with silicide, it forms a high-surface-area ohmic contact, thereby reducing base resistance and improving frequency characteristics.
Benefits of technology
It achieves low base resistance and high frequency characteristics, which are 17% lower and 10% higher than traditional solutions, respectively, thus improving device performance.
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Smart Images
Figure CN116031295B_ABST
Abstract
This disclosure relates to semiconductor structures, and more specifically, to transistors having an all-around outer base and methods of manufacturing them. The structure includes: a substrate; a collector region located within the substrate; an emitter region located above the substrate and comprising a single-crystal silicon-based material; an inner base located below the emitter region and comprising a semiconductor material; and an outer base surrounding the emitter and located above the inner base.
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