Multiprocessing semiconductor processing system

Abstract

An example substrate processing system can include a plurality of processing regions. The system can include a transfer region enclosure defining a transfer region fluidically coupled with the plurality of processing regions. The system can include a plurality of substrate supports. Each substrate support of the plurality of substrate supports can be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems can include a transfer device including a rotatable shaft extending through the transfer region enclosure. The transfer device can also include an end effector coupled with the rotatable shaft. The systems can include an exhaust foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails can be fluidically coupled with a separate processing region of the plurality of processing regions. The system can include a plurality of throttling valves.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Patent Application No. 16 / 932,795, filed July 19, 2020, entitled “MULTIPLE PROCESS SEMICONDUCTOR PROCESSING SYSTEM,” which is incorporated herein by reference in its entirety. Technical Field

[0003] This technology relates to semiconductor processing and equipment. More specifically, this technology relates to a semiconductor processing system having multiple processing regions. Background Technology

[0004] Semiconductor processing systems typically utilize clustering tools to integrate multiple processing chambers together. This configuration facilitates the execution of multiple sequential processing operations without removing the substrate from the controlled processing environment, or it can allow similar processing to be performed on multiple substrates simultaneously in different chambers. These chambers can include, for example, degassing chambers, pretreatment chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etching chambers, metering chambers, and other chambers. The combination of chambers in the clustering tool, along with the operating conditions and parameters for running these chambers, is selected to fabricate specific structures using specific processing formulations and processes.

[0005] Some processing systems may include multiple processing and transfer zones connected together. Depending on the layout and configuration of the components, precursors delivered through the system may fluidly enter and exit different zones. Deposition or damage may occur within the system when deposited and cleaned precursors (including plasma enhancement materials of the precursors) may enter the system's zones. Furthermore, specific layouts and flow patterns may limit the pressure differential between different processing zones, which may limit the types of processes that can be performed simultaneously and may challenge the consumption of different zones within the system.

[0006] Therefore, there is a need for improved systems and components capable of efficiently flowing and discharging materials within semiconductor processing chambers and systems. This technology addresses these and other needs. Summary of the Invention

[0007] An exemplary substrate processing system may include multiple processing regions. The system may include a transfer region housing defining a transfer region fluidly coupled to the multiple processing regions. The system may include multiple substrate supports. Each of the multiple substrate supports may be vertically translatable between the transfer region and an associated processing region of the multiple processing regions. The system may include a transfer device including a rotatable shaft extending through the transfer region housing. The transfer device may also include an end actuator coupled to the rotatable shaft. The system may include an exhaust pre-duct including multiple pre-duct tails. Each of the multiple pre-duct tails may be fluidly coupled to a separate processing region among the multiple processing regions. The system may include multiple throttle valves. Throttling valves of the multiple throttle valves may be incorporated in each of the multiple pre-duct tails.

[0008] In some embodiments, the system may include a plurality of purification channels extending around each of a plurality of substrate supports. Each of the plurality of purification channels may extend through a transfer region housing adjacent to a substrate support among the plurality of substrate supports. Each of the plurality of processing regions may be defined from above at least partially by a separate stack of caps. Each stack of caps may include a pumping pad fluidly coupled to an exhaust port of the substrate processing system. Each pumping pad may at least partially define an exhaust flow path from each processing region for purification gases delivered through the plurality of purification channels. The system may include flow-blocking pads extending from each of the plurality of substrate supports. When the substrate supports are in an elevated position for processing, each flow-blocking pad may define a plurality of orifices providing fluid communication between the associated processing region and transfer region. The plurality of substrate supports may include at least three substrate supports distributed around the transfer region. A transfer device may be located centrally between the plurality of substrate supports.

[0009] Some embodiments of this technology may include semiconductor processing methods. The method may include delivering one or more processing precursors through multiple cap stacks of a substrate processing system. Each of the multiple cap stacks fluidly enters a processing region among multiple processing regions. Each processing region among the multiple processing regions may be defined at least partially by the cap stacks of the multiple cap stacks and substrate supports of multiple substrate supports. The method may include creating a pressure differential between two processing regions among the multiple processing regions. The method may include delivering purge gases to a transfer region of the substrate processing system through multiple purge channels extending through a transfer region housing defining a transfer region. The transfer region may be fluidly coupled to each processing region among the multiple processing regions. The method may include discharging the processing precursors and purge gases through pumping pads of each of the multiple cap stacks.

[0010] In some embodiments, the pressure difference between two processing regions in the plurality of processing regions may be greater than or approximately 10 Torr. The substrate processing system may include a transfer device located in a transfer region. The transfer device may include a rotatable shaft extending through a housing of the transfer region. An end actuator may be coupled to the rotatable shaft. The end actuator may include a central hub defining a central orifice in fluid communication with a purification source. The end actuator may also include a plurality of arms, the number of which is equal to the number of substrate supports in a plurality of substrate supports. Delivery may include delivering a first precursor to a first processing region in two processing regions of the plurality of processing regions. The method may include delivering a second precursor to a second processing region in two processing regions of the plurality of processing regions. The first or second precursor may be a deposition precursor.

[0011] Each of the plurality of substrate supports may further include a flow-blocking liner extending from each substrate support to a transfer region of the substrate processing system. Each flow-blocking liner may define a plurality of orifices that provide fluid communication between the processing region and the transfer region when the substrate support is in an elevated position for processing. Purifying gas can be delivered from the transfer region through the plurality of orifices defined in the flow-blocking liner. The substrate processing system may include a system pre-pipeline comprising a plurality of pre-pipeline tails. Each of the plurality of pre-pipeline tails may be fluidly coupled to a separate processing region among the plurality of processing regions. The substrate processing system may include a plurality of throttle valves. One of the plurality of throttle valves may be incorporated in each of the plurality of pre-pipeline tails. The method may include adjusting a first throttle valve among the plurality of throttle valves separately from a second throttle valve among the plurality of throttle valves to maintain a pressure differential between two processing regions among the plurality of processing regions. One or more processing precursors may be restricted or prevented from flowing into the transfer region of the substrate processing system by the purifying gas.

[0012] This technology can offer many advantages over conventional systems and technologies. For example, the purification channel can limit or prevent the entry of processing precursors into the transfer area within the system. Furthermore, the system can facilitate the execution of different processes in different processing areas within the system. These and other embodiments, along with their many advantages and features, are described in more detail below with reference to the accompanying drawings. Attached Figure Description

[0013] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and the accompanying drawings.

[0014] Figure 1A A schematic top view of an exemplary processing tool according to some embodiments of the present technology is shown.

[0015] Figure 1BA schematic partial cross-sectional view of an exemplary processing system according to some embodiments of the present technology is shown.

[0016] Figure 2 A schematic isometric view of the transfer portion of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0017] Figure 3 A schematic isometric view of an exemplary exhaust system of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0018] Figure 4 A schematic partial isometric view of a purified gas delivery system according to some embodiments of the present technology is shown.

[0019] Figure 5 A schematic partial cross-sectional view of a processing system according to some embodiments of the present technology is shown.

[0020] Figure 6 Selected operations in a semiconductor processing method according to some embodiments of the present technology are shown.

[0021] Several accompanying drawings are included as illustrations. It should be understood that these drawings are for illustrative purposes and should not be considered to be to scale unless specifically stated otherwise. Furthermore, these drawings are provided as illustrative to aid understanding and may not include all aspects or information compared to actual representation, and may include exaggerated material for illustrative purposes.

[0022] In the accompanying drawings, similar parts and / or features may have the same reference numerals. Furthermore, various parts of the same type can be distinguished by adding letters after the reference numerals to differentiate them. If only the first reference numeral is used in the specification, the description applies to any similar parts having the same first reference numeral, regardless of the letters used. Detailed Implementation

[0023] Substrate processing can include time-intensive operations for adding, removing, or otherwise modifying material on a wafer or semiconductor substrate. Efficient substrate movement reduces queuing time and increases substrate throughput. To increase the number of substrates processed within a clustering tool, additional chambers can be added to the host machine. While it is possible to continuously increase the number of transfer robots and processing chambers by lengthening the tool, this can become space-inefficient as the footprint of the clustering tool increases. Therefore, this technology can include clustering tools with an increased number of processing chambers within a defined footprint. To accommodate the limited footprint of the transfer robot, this technology can increase the number of processing chambers laterally outward from the robot. For example, some conventional clustering tools can include one or two processing chambers positioned around a centrally located portion of the transfer robot to maximize the number of chambers radially around the robot. This technology can extend the concept by combining laterally outward additional chambers as another column or another set of chambers. For example, this technology can be applied to clustering tools comprising three, four, five, six, or more processing chambers that can enter and exit at each of one or more robot entry and exit positions.

[0024] However, with the addition of additional processing locations, it may no longer be feasible for a central robot to move in and out of these locations without additional transfer capabilities at each location. Some conventional techniques may include a wafer carrier, on which the substrate is held during the transition. However, the wafer carrier can cause thermal inhomogeneities and particulate contamination on the substrate. This technology overcomes these problems by incorporating a transfer section vertically aligned with the processing chamber region and a rotary conveyor or transfer device that can operate in conjunction with a central robot to move in and out of additional wafer locations. A substrate support can then be vertically translated between the transfer area and the processing area to transport the substrate for processing.

[0025] When the transfer zone is fluid-accessible to the processing zone, processing gases or plasma-enhancing materials can permeate through the processing zone and enter the transfer zone. These may include deposition precursors, cleaning gases, or other active precursors of materials that can cause deposition or other processing interactions within the transfer zone, and may result in deposition or damage to components in the transfer zone. This technique overcomes these problems by delivering one or more cleaning gases to the transfer zone to help limit or prevent the entry of processing precursors into the transfer zone. Furthermore, by utilizing these cleaning gases and controlling their flow rates, and incorporating additional system components, this technique can allow different processes to be performed in various processing zones of the system, which can increase the functionality of the system according to some embodiments of this technique.

[0026] While the remainder of the disclosure will routinely identify specific structures (e.g., four-position transfer regions) from which this structure and method can be employed, it will be readily understood that the substrate processing system or component can be equally used in any number of other systems or chambers. Therefore, this technique should not be considered limited to use alone in any particular chamber. Furthermore, while exemplary tool systems will be described to provide a basis for this technique, it should be understood that this technique can be combined with any number of semiconductor processing chambers and tools, wherein these semiconductor processing chambers and tools can benefit from some or all of the operations and systems described herein.

[0027] Figure 1A A top view of one embodiment of a substrate processing tool or system 100 with deposition, etching, baking, and curing chambers according to some embodiments of the present technology is shown. In the figure, a set of front-opening standard chambers 102 supply substrates of various sizes, which are received by robotic arms 104a and 104b within a factory interface 103 and placed in a load lock or low-pressure holding region 106 before being transported to one of four quad sections 109a-c (located in a chamber system or quad sections 109a-c), each of which may be a substrate processing system having transfer regions fluidly coupled to multiple processing regions 108. Although a quad system is shown, it should be understood that the present technology also includes platforms combining independent chambers, dual chambers, and other multi-chamber systems. A second robotic arm 110, housed in transfer chamber 112, can be used to transport a substrate wafer from holding region 106 to and from a set of four sections 109 and back, and the second robotic arm 110 can be housed in the transfer chamber, wherein each set of four sections or processing system can be connected to the transfer chamber. Each substrate processing region 108 can be configured to perform multiple substrate processing operations, including any number of deposition processes, including cyclic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as etching, pre-cleaning, annealing, plasma treatment, degassing, orientation, and other substrate processing.

[0028] Each set of four sections 109 may include a transfer area that can receive and transport a substrate from and to a second robotic arm 110. The transfer areas of the chamber system may be aligned with transfer chambers having the second robotic arm 110. In some embodiments, the robot may move laterally into and out of the transfer areas. In subsequent operations, components of the transfer sections may vertically translate the substrate into the overlying processing area 108. Similarly, the transfer areas may also be operable to rotate the substrate between positions within each transfer area. The substrate processing area 108 may include any number of system components for depositing, annealing, curing, and / or etching thin films of material on a substrate or wafer. In one configuration, two sets of processing areas, such as those in sets of four sections 109a and 109b, may be used for depositing material on the substrate, while a third set of processing chambers (such as those in sets of four sections 109c) may be used for curing, annealing, or processing the deposited film. In another configuration, all three sets of chambers, such as all twelve chambers shown, may be configured to deposit and / or cure thin films on the substrate.

[0029] As shown, the second robotic arm 110 may include two arms for simultaneously transporting and / or retrieving multiple substrates. For example, each of the four-unit groups 109 may include two inlets 107 along the surface of the housing of the transfer area, which may be laterally aligned with the second robotic arm. The inlets and outlets may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, such as those shown, the first inlet and outlet may be aligned with a first substrate support among the multiple substrate supports of the four-unit group. Furthermore, the second inlet and outlet may be aligned with a second substrate support among the multiple substrate supports of the four-unit group. In some embodiments, the first substrate support may be adjacent to the second substrate support, and the two substrate supports may define a first column of substrate supports. As shown in the configuration, the second column of substrate supports may be positioned laterally outward from the transfer chamber 112 behind the first column of substrate supports. The two arms of the second robotic arm 110 may be spaced apart to allow both arms to simultaneously enter the four-unit group or chamber system to transport or retrieve one or two substrates to or from the substrate supports within the transfer area.

[0030] Any one or more transfer regions described may be combined with additional chambers separate from the manufacturing systems shown in the different embodiments. It should be understood that processing system 100 considers additional configurations of chambers for deposition, etching, annealing, and curing of thin film materials. Furthermore, any number of other processing systems may be used in conjunction with this technology, which may be combined with a transport system for performing any particular operation (e.g., substrate movement). In some embodiments, a processing system that can provide access to multiple processing chamber regions while maintaining a vacuum environment in each portion (e.g., the aforementioned holding and transfer regions) may allow operations to be performed in multiple chambers while maintaining a specific vacuum environment between discrete processes.

[0031] Figure 1B A schematic cross-sectional front view of one embodiment of an exemplary processing tool (e.g., through a chamber system) according to some embodiments of the present technology is shown. Figure 1B A cross-sectional view through any two adjacent processing regions 108 in any group of four sections 109 can be shown. A front view may illustrate the configuration or fluid coupling of one or more processing regions 108 with transfer regions 120. For example, continuous transfer regions 120 may be defined by a transfer region housing 125. The housing may define an open internal volume in which multiple substrate supports 130 may be disposed. For example, as... Figure 1A As shown, the exemplary processing system may include four or more substrate supports 130 distributed within a housing surrounding a transfer region. The substrate supports may be a base as shown, but various other configurations may also be used. In some embodiments, the base may be vertically translatable between the transfer region 120 and a processing region covering the transfer region. The substrate supports may be vertically translatable along a path between a first and a second position within the chamber system along a central axis of the substrate support. Thus, in some embodiments, each substrate support 130 may be axially aligned with an overlying processing region 108 defined by one or more chamber components.

[0032] An open transfer area provides the transfer device 135 (e.g., a turntable) with the ability to engage and move (e.g., rotate) substrates between various substrate supports. The transfer device 135 can rotate about a central axis. This allows substrates to be positioned for processing within any processing area 108 within the processing system. The transfer device 135 may include one or more end actuators that can engage substrates from above, below, or engage the outer edges of substrates to move around substrate supports. The transfer device can receive substrates from a transfer chamber robot, such as the previously described robot 110. The transfer device can then rotate the substrates to alternate substrate supports to facilitate the transport of additional substrates.

[0033] Once positioned and awaiting processing, the transfer device can position the end actuator or arm between the substrate supports, allowing the substrate supports to rise through the transfer device 135 and transport the substrate into a processing area 108, which can be vertically offset from the transfer area. For example, and as shown, substrate support 130a can transport the substrate into processing area 108a, while substrate support 130b can transport the substrate into processing area 108b. This can occur with two other substrate supports and processing areas, and in embodiments including additional processing areas, additional substrate supports and processing areas. In this configuration, when operably engaged for processing a substrate (e.g., in a second position), the substrate supports can at least partially define the processing area 108 from below, and the processing area can be axially aligned with the associated substrate support. The processing area can be defined from above by panel 140 and other cover stack components. In some embodiments, each processing area may have a separate cover stack component, but in some embodiments, the components may accommodate multiple processing areas 108. Based on this configuration, in some embodiments, each processing region 108 may be fluidly coupled to a transfer region while being fluidly isolated from above from the chamber system or each of the four groups of sections.

[0034] In some embodiments, panel 140 may operate as an electrode of a system for generating localized plasma within processing region 108. As shown, each processing region may utilize or incorporate a separate panel. For example, panel 140a may be included to define processing region 108a from above, and panel 140b may be included to define processing region 108b from above. In some embodiments, a substrate support may operate as a mating electrode for generating capacitively coupled plasma between the panel and the substrate support. Depending on the volumetric geometry, pumping pad 145 may define processing region 108 at least partially radially or laterally. Similarly, a separate pumping pad may be used for each processing region. For example, pumping pad 145a may define processing region 108a at least partially radially, and pumping pad 145b may define processing region 108b at least partially radially. In embodiments, baffle 150 may be positioned between cover 155 and panel 140, and may again include a separate baffle to facilitate fluid distribution within each processing region. For example, a baffle plate 150a may be included for distribution toward the processing area 108a, and a baffle plate 150b may be included for distribution toward the processing area 108b.

[0035] The cover 155 may be a separate component for each processing region, or it may include one or more common aspects. In some embodiments (e.g., illustrated), the cover 155 may be a single component defining a plurality of orifices 160 for delivering fluid to individual processing regions. For example, the cover 155 may define a first orifice 160a for delivering fluid to processing region 108a, and the cover 155 may define a second orifice 160b for delivering fluid to processing region 108b. Additional orifices may be defined (when included) for additional processing regions within each portion. In some embodiments, each of the four-unit groups 109—or a multi-processing region portion accommodating more or fewer than four substrates—may include one or more remote plasma units 165 for delivering plasma effluent into the processing chamber. In some embodiments, a separate plasma unit may be incorporated into each chamber processing region, although fewer remote plasma units may be used in some embodiments. For example, as illustrated, a single remote plasma unit 165 may be used for multiple chambers, such as two, three, four, or more chambers, up to all chambers of a particular four-unit group. In embodiments of this technology, conduits can extend from the remote plasma unit 165 to each orifice 160 for conveying plasma effluent for processing or cleaning.

[0036] In some embodiments, the purification channel 170 may extend through the transfer area housing near or adjacent to each substrate support 130. For example, multiple purification channels may extend through the transfer area housing to provide fluid inlets and outlets for fluidly coupled purified gas to be delivered into the transfer area. The number of purification channels may be the same as or different (including more or less) than the number of substrate supports within the processing system. For example, the purification channel 170 may extend through the transfer area housing below each substrate support, and in some embodiments, multiple purification channels may be distributed around each substrate support. For the two illustrated substrate supports 130, a first purification channel 170a may extend through the housing near substrate support 130a, and a second purification channel 170b may extend through the housing near substrate support 130b. It should be understood that any additional substrate support may similarly have vertically plumbed purification channels extending through the transfer area housing to provide purified gas into the transfer area.

[0037] As the purified gas is delivered through one or more purification channels, it can similarly exit through pumping pad 145, which provides all exit paths from the processing system. Therefore, in some embodiments, both the processing precursor and the purified gas can be exited through the pumping pad. The purified gas can flow upwards to the associated pumping pad; for example, purified gas flowing through purification channel 170b can exit the processing system from pumping pad 145b. As will be further explained below, the purified gas flow can be delivered to limit the transfer area of ​​the processing precursor from intruding into the system. Furthermore, in some embodiments of this art, additional purified gas can flow through and around transfer device 135 to limit the accumulation of processing precursors in the central area between the various processing areas.

[0038] As indicated, the processing system 100 (or more specifically, a group of four parts or chamber systems combined with the processing system 100 or other processing systems) may include a transfer section located below the illustrated processing chamber region. Figure 2 A schematic isometric view of the transfer portion of an exemplary chamber system 200 according to some embodiments of the present technology is shown. Figure 2 Additional aspects or variations of the aforementioned transfer region 120 may be shown, and may include any of the described components or features. The illustrated system may include a transfer region housing 205 that defines a transfer region in which multiple components may be included. The transfer region may be additionally, at least partially, defined from above by a processing chamber or a processing region fluidly coupled to the transfer region, for example... Figure 1A The processing chamber region 108 is shown in a set of four sections 109. The sidewalls of the transfer region housing may define one or more access positions 207 through which the substrate can be transported and retrieved, for example, via the second robotic arm 110 as described above. In some embodiments, the access position 207 may be a slit valve or other sealable access position, including a door or other sealing mechanism to provide a sealed environment within the transfer region housing 205. Although two such access positions 207 are shown, it should be understood that in some embodiments only a single access position 207 may be included, as well as access positions on multiple sides of the transfer region housing. It should also be understood that the dimensions of the illustrated transfer portions can be adapted to any substrate size, including substrates of 200 mm, 300 mm, 450 mm, or larger or smaller, including substrates characterized by any number of geometries or shapes.

[0039] Within the transfer area housing 205 may be a plurality of substrate supports 210 positioned around the volume of the transfer area. Although four substrate supports are illustrated, it should be understood that embodiments of the present technology similarly cover any number of substrate supports. For example, according to embodiments of the present technology, more than or approximately three, four, five, six, eight or more substrate supports 210 may be accommodated in the transfer area. A second robotic arm 110 may transport substrates to one or both of substrate supports 210a or 210b via inlet / outlet 207. Similarly, the second robotic arm 110 may retrieve substrates from these locations. A lifting pin 212 may protrude from the substrate support 210 and may allow the robot to enter and exit under the substrate. In some embodiments, the lifting pin may be fixed to the substrate support, or fixed to a recessed location on the substrate support, or the lifting pin may be additionally raised or lowered via the substrate support. The substrate support 210 may be vertically translatable and, in some embodiments, may extend into a processing chamber region of the substrate processing system, such as processing chamber region 108, which is located above the transfer area housing 205.

[0040] The transfer area housing 205 can provide an inlet / outlet 215 for an alignment system, which may include an aligner that extends through a hole in the transfer area housing as shown and can operate in conjunction with a laser, camera, or other monitoring device that protrudes or transmits through adjacent holes. This aligner can determine whether the substrate being translated is correctly aligned. The transfer area housing 205 may also include a transfer device 220 that can operate in various ways to position and move substrates between various substrate supports. In one example, the transfer device 220 can move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, allowing additional substrates to be transported into the transfer chamber. Additional transfer operations may include rotating the substrates between substrate supports for additional processing in the overlay processing area.

[0041] The transfer device 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. An end actuator 235 may be connected to the shafts. The end actuator 235 may include a plurality of arms 237 extending radially or laterally outward from the central hub. Although a central body with arms extending therefrom is shown, in various embodiments, the end actuator may also include individual arms, each coupled to a shaft or the central hub. Any number of arms may be included in embodiments of the art. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as shown, for four substrate supports, the transfer device 220 may include four arms extending from the end actuator. The arms may be characterized by any number of shapes and profiles, such as straight or arcuate profiles, and include any number of distal profiles including hooks, loops, forks, or other designs for supporting substrates and / or providing access to or from substrates, such as for alignment or engagement.

[0042] As described above, in some embodiments, a central purification may be included within the processing area. For example, when each of the four substrate supports 210 includes a purification channel near the rod and extending through the transfer chamber housing, the airflow may not extend across the central hub 225. Therefore, processing precursors that might flow into this area may accumulate instead of being purified from the transfer area. To limit or prevent this effect, in some embodiments, the technique can deliver additional purification via and / or around the transfer device. As will be described below, the airflow may extend from below the end actuator, and the airflow may also extend through a central aperture 240 defining a path through the central hub. The aperture may provide fluid inlets and outlets into the transfer area from a shaft (e.g., a rotatable shaft) of the transfer device to which the end actuator can be coupled. A purification source may be fluidly connected to the shaft to provide a purification path through the central aperture.

[0043] End actuator 235 or components or portions thereof may be used to contact the substrate during transfer or movement. These components and end actuators may be made of or comprise a variety of materials, including conductive and / or insulating materials. In some embodiments, the material may be coated or plated to withstand contact with precursors or other chemicals that may enter the transfer chamber from the overlying processing chamber.

[0044] Furthermore, materials can be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, a substrate support can be used to heat a substrate disposed on the support. The substrate support can be configured to increase the surface or substrate temperature to temperatures greater than or about 100°C, greater than or about 200°C, greater than or about 300°C, greater than or about 400°C, greater than or about 500°C, greater than or about 600°C, greater than or about 700°C, greater than or about 800°C, or higher. Any of these temperatures can be maintained during operation, and therefore components of the transfer device 220 can be exposed to any of these mentioned or included temperatures. Therefore, in some embodiments, any material can be selected to accommodate these temperature ranges, and materials such as ceramics and metals, characterized by relatively low coefficients of thermal expansion or other beneficial properties, can be included.

[0045] Component couplers can also be adapted for operation in high-temperature and / or corrosive environments. For example, in cases where the end actuator and end portion are ceramic, the coupler may include press-fit, snap-fit, or other fits that may not contain additional materials (e.g., bolts) that may expand and contract with temperature and potentially cause the ceramic to crack. In some embodiments, the end portion may be continuous with the end actuator and may be integrally formed with the end actuator. Any number of other materials that may facilitate operation or provide resistance during operation can be used and are similarly covered by this technology.

[0046] Figure 3 A schematic isometric view of an exemplary venting system 300 of an exemplary substrate processing system according to some embodiments of the present technology is shown. This figure can illustrate aspects of the aforementioned processing system and components, and can also illustrate additional aspects of the system. This figure can illustrate a system with multiple components removed to facilitate illustration of the venting system of the processing system. It should be understood that the venting system 300 can include any aspect of any part of a processing system described or depicted elsewhere, and can illustrate aspects of a venting system combined with any system described elsewhere. For example, the venting system 300 can illustrate a system with some previously described cover stack components removed. It should be understood that these components can still be incorporated, for example, by including a pumping liner at each processing location.

[0047] As previously described, a processing system according to some embodiments of the present technology may include a substrate support 305 that can be vertically translated from a transfer region 310, which may include any aspect of the chamber portion 200 described above. The substrate supports 305 may each extend into an associated processing region, where they may define the processing region at least partially from below, and where a panel or other cover stack member defines the processing region at least partially from above. Pumping liners may define the processing region at least partially radially and may provide an venting path as described above, which may deliver material to an venting system, such as shown in the figures. Each pumping liner may provide an inlet / outlet leading to a pre-stage conduit tail 315, which leads to a pre-stage conduit. Each of the pre-stage conduit tails 315 may be fluidly coupled to a pumping system 318 configured to draw material from the system. As shown, each pre-stage conduit tail 315 may be coupled to a separate processing region at an external location as shown, but in embodiments with radially drawn pumping liners as previously described, the pumping lines may be connected at any number of locations.

[0048] As shown, the pre-duct tail 315 can be the only exhaust path from the processing system (including from the transfer area 310). Furthermore, as shown, the substrate support 305 may not fully accommodate or seal the cap stack components (e.g., a lower cover 320 that can support a separate cap stack component), and can at least partially define the processing area around the substrate support. The lower cover 320 can also define the transfer area from above. Therefore, each processing area can then be fluidly coupled to the transfer area around the substrate support. As the purge gas exits from the purge channel near the substrate support, the gas can then be drawn into the pumping liner surrounding the substrate support and through the lower cover before flowing through it and entering the exhaust system. Thus, the pumping liner can define an exhaust flow path from each processing area for the processing precursor that can be delivered from above the pumping liner and the purge gas that can be delivered from the transfer area and below the pumping liner.

[0049] When each processing zone is performing similar operations, this may include delivering similar amounts of purge gas from the processing zone around each substrate support. The central region shown may not see much flow through it, as the purge gas can generally flow upwards to the relevant processing zone and may not flow over or between the substrate supports. To limit the accumulation of processing material or precursors in the transfer region, additional purge flow may be concentrated and delivered to the transfer region as discussed above with respect to some embodiments of the present technology.

[0050] In some embodiments discussed further below, the system according to the present technology can be used to perform different processes in different processing regions, and these different processes can be performed simultaneously. Multiple different processes can be performed in various regions by flowing different precursors, such as deposition or etching precursors. Additional deposition material or etchant may be generated by using purge gases as described (mixing of these gases in the transfer region), and the flow of these materials can be restricted or prevented from interacting with each other in the transfer region. Furthermore, the range of processes that can be performed simultaneously can be further increased by including one or more additional components or process controls.

[0051] When individual processes are performed at relatively similar processing pressures, the system can maintain equilibrium through similar clean flow rates and relatively similar exhaust rates in individual zones. However, this technology also facilitates processes that can occur at different processing pressures across various processing zones. One consideration during processes that may occur at different pressures is that the pressures of the exhaust systems may be unequal or dissimilar. Although multiple pumping systems can be incorporated in some embodiments, this technology can include a throttle valve 325 in each fore-end pipe tail 315. By having independently controllable throttle valves in some embodiments of this technology, a single pumping system 318 can be used to operate as an exhaust pump for each of the multiple processing zones. By adjusting the inlet flow rate in individual processing zones and operating the throttle valves independently, processes occurring at different processing pressures can be performed simultaneously in different processing zones.

[0052] Different flow rates of precursors used to maintain different pressures in different processing zones can affect the likelihood of precursors or effluents flowing into transfer areas of the processing system. Therefore, in some embodiments, the purge gas delivery system can also be separate, which can allow different purge rates to be delivered to different processing zones. For example, processing zones operating at higher processing pressures can be adapted by providing an increased purge gas flow from the transfer zone as previously described. The increased purge gas flow can serve to prevent or limit the entry of processing effluents, byproducts, or precursors into the transfer zone.

[0053] As previously described, exhaust gas can be drawn radially outward from the processing area into the air chamber formed in the pumping liner. Material can then be drawn into the relevant pre-stage pipe tail at the edge of the pumping liner. Purifying gas delivery can also be performed to ensure a substantially equal radial distribution around the substrate support, which ensures a more uniform effect on the processing precursor and limits the impact on the substrate being processed. Figure 4A schematic partial isometric view of a purified gas delivery system 400 according to some embodiments of the present technology is shown. This view may be shown below a transfer area housing 405, which may include any aspect of the aforementioned transfer area housing 125. This view may show a portion of the transfer area housing, which may be located within a substrate support area of ​​the transfer area. This figure may show a portion of a system surrounding a substrate support, but it should be understood that these components may be included in or surrounding any substrate support or separate processing area of ​​the system. Similar to the purified channel 170 described above, the purified channel 410 may extend around a substrate support base and may extend radially outward through the transfer area housing near the substrate support, for example, through the platform portion of the substrate support.

[0054] In some embodiments, the purge channels can be supplied from the gas chamber 415, which can facilitate delivery to multiple purge channels surrounding each substrate support. For example, a gas chamber can be formed in each set of purge channels surrounding each substrate support. In some embodiments, a purge source 420 (e.g., an inert or non-reactive gas source) can be fluidly coupled to each gas chamber. For example, a separate controllable source can be coupled to each gas chamber, which can allow different purge gas flow rates to be delivered around each individual substrate support. For example, for higher pressure processing, a higher flow rate of purge gas can be delivered through the purge channel 410 to counteract the increased pressure from the processing area. To further control the fluid flow between the processing area and the transfer area, in some embodiments, a flow-blocking liner can be incorporated between each processing area and the transfer area.

[0055] Figure 5 A schematic partial cross-sectional view of a processing system 500 according to some embodiments of the present technology is shown. The processing system 500 may include any features, components, or aspects of any system previously described, and additional features that may be combined with any system according to embodiments of the present technology may be shown. This figure may show a portion of a system surrounding a substrate support, but it should be understood that these components may be included in any substrate support or individual processing area of ​​the system. System 500 may include a transfer area housing 505 and a cover plate 510, which may be disposed on the transfer area housing and may define a separate processing area. These components may be the same as the structural components previously described. A substrate support 515 may extend from the transfer area toward a covered cover stack into or through the cover plate, as previously described with respect to the processing area.

[0056] As described above, in some embodiments, additional flow components may be incorporated into the system to further restrict the flow of processed material into the transfer area. For example, in some embodiments, a flow-blocking pad 520 may be disposed on each substrate support and may extend vertically from the substrate support toward the transfer area. The flow-blocking pad may be disposed proximally on the substrate support and may extend radially outward in a distal direction. When the substrate support is raised to the operating position, the outward extension may then be positioned against a cover plate 510. As shown, the flow-blocking pad may contact the cover plate to prevent additional flow between the processing area and the transfer area. As shown, the flow-blocking pad 520 may define a plurality of holes 525 through the radially outward extension, which provide fluid communication between the associated processing area and transfer area when the flow-blocking pad engages against the cover plate. The holes 525 may extend radially around the substrate support to allow uniform flow through the flow-blocking pad. The size of the holes may be configured to provide any number of flow-blockers, which may be based on any fluid flow rate or pressure within the system. For example, the size of the hole can be less than or about 10 mm, and can be less than or about 9 mm, less than or about 8 mm, less than or about 7 mm, less than or about 6 mm, less than or about 5 mm, less than or about 4 mm, less than or about 3 mm, less than or about 2 mm, less than or about 1 mm, or smaller.

[0057] A gap 530 can be formed between the substrate support and the cover plate to limit the formation of turbulence or other eddies for the upward flow of purge gas from the transfer area. This gap can widen the space between the choke liner and the cover stack in the proximal region of the pumping liner near the cover stack. The gap 530 can be of any size and can be at least equal to the diameter of the orifice 525 formed through the choke liner. In some embodiments, the gap 530 can be at least about 1.5 times the diameter of the orifice 525, and can be at least about 2.0 times, at least about 2.5 times, at least 3.0 times, at least about 3.5 times, at least about 4.0 times, at least about 4.5 times, at least about 5.0 times, or greater. By incorporating the choke liner, different purge flows between multiple processing zones can be more easily controlled when different processes are operated in multiple processing zones.

[0058] The system described above can be used to perform semiconductor processing, and in some embodiments it can be used to perform multiple different processes simultaneously. Figure 6Selected operations in a semiconductor processing method 600 according to some embodiments of the present technology are illustrated. The method can be performed in a variety of processing systems, including the processing system 100 described above, which may include any features or components described throughout this disclosure. The method may include performing a decontamination operation in a transfer region of the processing system during semiconductor processing or chamber cleaning, which may limit material buildup in the transfer region, as previously described. Method 600 may include a number of optional operations, which may or may not be specifically associated with some embodiments of the method according to the present technology. For example, many operations are described to provide a wider range of structures for formation and execution, but many operations are not technically critical, or many operations may be performed by readily understood alternative methods. The method can be performed in any processing chamber or system including any of the components, configurations, or aspects described above, including any aspect of the transfer device or exhaust system described above. According to embodiments of the present technology, the method may also be performed in any other processing chamber that may benefit from decontamination.

[0059] Method 600 may include additional operations prior to the commencement of the listed operations. For example, additional processing operations may include conveying the substrate to a transfer area, rotating the substrate between substrate supports, and performing any number of substrate processes within the processing system or any other processing chamber. The substrate may be placed on substrate supports (e.g., within the transfer area), which may be transferred to a processing area that may cover the transfer area as previously described. In operation 605, one or more processing precursors may be conveyed to the processing area, which may include conveying to multiple processing areas (e.g., via separate cap stacks as previously described). As described above, each processing area may be at least partially defined by an associated cap stack, substrate supports, and a pumping liner, and processing and decontamination materials may be discharged from the system via the pumping liner.

[0060] In some embodiments, different processing operations can be performed in different processing regions, as described above. For example, a first processing can be performed in a first chamber or a first set of chambers using a first precursor or a first set of precursors, and a second processing, different from the first processing, can be performed in a second chamber or a second set of chambers using a second precursor or a second set of precursors. The processing can be characterized by any number of different aspects, including any set of temperature, pressure, flow, and material conditions that may be similar or different between regions. It should be understood that any number of different operations can be performed, and the following examples are not intended to limit the capabilities or processing covered by this technology. For example, in some embodiments, the first processing may include a substrate pretreatment operation, while the second processing may include a deposition operation. Furthermore, in some embodiments, the first processing may include a first deposition operation, while the second processing may include a different deposition operation. Such processing can allow the formation of material stacks (e.g., memory stacks) with a number of material layers, which can allow the formation to be performed by rotating the substrate between multiple locations, significantly reducing throughput compared to using multiple chambers on a processing tool.

[0061] Because each processing zone can be heated by a substrate support, the temperature can be easily adjusted from one processing zone to the next for any processing. Pressure can also be adjusted between processing zones, which can be adapted by utilizing components from embodiments of the present technology described previously to adjust flow rates, purge gas delivery, and exhaust line throttling. For example, in some embodiments, flow-blocking pads as described above can be combined with each processing zone. Thus, in some embodiments, a pressure differential can be generated between two processing zones at optional operation 610. For example, a first processing can be performed at a first operating pressure of less than or about 20 Torr, less than or about 15 Torr, less than or about 10 Torr, less than or about 5 Torr, or less. A second processing performed simultaneously in adjacent processing zones or additional processing zones of the system can be performed at similar or different operating pressures. For example, a second processing can be performed at a pressure greater than or about 10 Torr, greater than or about 15 Torr, greater than or about 20 Torr, greater than or about 25 Torr, or higher. During operation, the difference between treated areas can be greater than or about 1 torpedo, and can be greater than or about 5 torpedo, greater than or about 10 torpedo, greater than or about 15 torpedo, greater than or about 20 torpedo, or more.

[0062] At operation 615, one or more purge gases may be delivered to a transfer region extending below each processing region. The purge gas may flow through one or more purge channels, such as those previously described, which may be positioned close to (including around) each substrate support and may extend through the transfer region housing. In some embodiments, purge gas may be additionally provided via a rotatable shaft, which may deliver additional purge gas to the transfer region (e.g., through a central aperture defined by the central hub of the transfer device). Furthermore, purge gas may be delivered through a baffle at the bottom of the transfer region surrounding the shaft of the transfer device, or through an aperture on the shaft of the transfer device as previously described.

[0063] To provide the pressure differential as described above, the flow rate of the transported precursors can be adjusted. Providing a constant purge flow rate at each station can increase the diffusion potential from the processing area to the transfer area. Therefore, in some embodiments, the delivery of purge gas can be adjusted between stations, where a higher purge gas flow rate can be provided at stations operating at higher pressures. Providing a varied purge gas rate also ensures that the processing precursors are confined or prevented from flowing into the transfer area of ​​the substrate processing system. In operation 620, the processing system can discharge one or more processing precursors, processing byproducts, and purge gas transported through the transfer area. As previously described, by discharging the purge gas through a pumping liner and exhaust system, the purge gas can provide a barrier to limit or prevent the accumulation of processing precursors in the transfer area. Because the exhaust flow may differ between multiple areas depending on the processing being performed, in some embodiments, the exhaust line may include separate throttle valves as previously described, which can control the flow to the central pumping system. The first throttle valve may be regulated separately from the second throttle valve, or each throttle valve in the system may operate in groups or individually to maintain a pressure differential during processing.

[0064] The purge gas may include any material that is inert or does not react with one or more components of the system, and may include nitrogen, argon, helium, hydrogen, oxygen, or any other processing precursor or carrier gas that can limit the impact on the process being performed. Because the purge gas can be delivered to provide a barrier or curtain to restrict the flow of processing precursors from the processing area, the flow rate may be less than the flow rate of the processing precursors. For example, in some embodiments, the purge gas delivered from each purge channel may be delivered at a volume of less than or about 90% of the flow rate of the processing precursors delivered through the associated cover stack. Additionally, the delivered purge gas may be less than or about 85% of the flow rate of the processing precursors, and may be less than or about 80%, less than or about 75%, less than or about 70%, less than or about 65%, less than or about 60%, less than or about 55%, less than or about 50%, or less.

[0065] As previously mentioned, purge gases can be supplied above and below the transfer device to prevent the formation of dead zones where processed material may accumulate. To limit the impact of the supply on the balanced flow rate to each processing zone, in some embodiments, the amount of purge gas supplied in a centralized manner may be less than the amount supplied to any individual purge channel. For example, in some embodiments, the purge gas supplied centrally through and / or around the transfer device may be less than or approximately 80% of the volume supplied from any individual purge channel near the individual substrate support.

[0066] The volume of the purified gas delivered around and / or through the transfer device can be based at least in part on the volume of the transfer area, the volume of the precursor delivered through the cover stack, and any other characteristic treatments and chamber configurations. In some embodiments, the total volume of purified gas delivered through and / or around the axis of the transfer device can be less than or about 20 slm, and can be less than or about 15 slm, less than or about 10 slm, less than or about 5 slm, less than or about 1 slm, less than or about 0.5 slm, less than or about 0.3 slm, or less. In some embodiments, delivery can be carried out at a rate of less than or about 3 slm, which can limit the thermal impact on the transfer device, although higher flow rates can be provided during high-pressure processing operations. Because the transfer device can provide a flow path for the purified gas, in some embodiments the flow rate of the purified gas can be controlled to limit cooling along any aspect of the arm or transfer device. By providing a purifying gas through a transfer area of ​​a processing system that may include one or more components according to some embodiments of the present technology, the flow of processing precursors into and / or accumulation in the transfer area can be restricted or prevented, and different processing conditions can be maintained in separate processing areas during multiple substrate processing operations.

[0067] In the foregoing description, numerous details have been set forth for illustrative purposes to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0068] Several embodiments have been disclosed, and those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, to avoid unnecessarily obscuring the present technology, many well-known processes and elements have not been described. Therefore, the above description should not be considered as limiting the scope of the present technology. Additionally, methods or processes may be described as sequential or stepwise, but it should be understood that these operations may be performed simultaneously or in a sequence different from that listed.

[0069] When a range of values ​​is provided, it should be understood that, unless the context explicitly specifies otherwise, each intermediate value (the smallest fraction accurate to the lower limit unit) between the upper and lower limits of the range is also specifically disclosed. Any narrower range between any specified value or intermediate value not specified within the specified range and any other specified or intermediate value within the specified range is included. The upper and lower limits of these smaller ranges may be independently included or excluded from the range, and each range (which may not include one or both, or both may be included in the smaller range) is also included in the technique, subject to any explicitly excluded limitation. If the range includes one or both limitations, then the range that excludes one or both limitations included is also included.

[0070] As used herein and in the appended claims, the singular forms “a,” “an,” and “the” include plural references unless the context clearly specifies otherwise. Thus, for example, a reference to “shaft” includes a plurality of such shafts, and a reference to “hole” includes a reference to one or more connectors and their equivalents known to those skilled in the art, and so on.

[0071] Furthermore, when used in this specification and the claims below, the terms "comprising" or "including" are intended to specify the presence of the said feature, integer, component, or operation, but do not exclude the presence or addition of one or more other features, integers, components, operations, actions, or groups.

Claims

1. A substrate processing system, comprising: Multiple processing areas; A transfer area shell that defines a transfer area that is fluidly coupled to the plurality of processing areas; Multiple substrate supports, each of which is vertically translatable between the transfer region and the corresponding processing regions of the multiple processing regions; Transfer device, comprising: A rotatable shaft extending through the housing of the transfer region, and An end actuator coupled to the rotatable shaft; An exhaust pre-pipeline includes a plurality of pre-pipeline tails, each of the plurality of pre-pipeline tails being fluidly coupled to a separate treatment area among the plurality of treatment areas; and Multiple throttle valves, wherein the throttle valves are combined in each of the multiple upstream pipe tails and can be adjusted separately to maintain the pressure difference between different treatment zones in the multiple treatment zones.

2. The substrate processing system as described in claim 1, further comprising: Multiple purification channels extend around each of the multiple substrate supports.

3. The substrate processing system of claim 2, wherein each of the plurality of purification channels extends through the transfer region housing near the substrate support of the plurality of substrate supports.

4. The substrate processing system of claim 2, wherein each of the plurality of processing regions is defined at least partially from above by a separate cover stack, and wherein each cover stack includes a pumping liner fluidly coupled to an exhaust port of the substrate processing system.

5. The substrate processing system of claim 4, wherein each pumping liner at least partially defines an exhaust flow path for the purified gas from each processing area to be delivered through the plurality of purification channels.

6. The substrate processing system of claim 1, further comprising: A flow-blocking liner extending from each of the plurality of substrate supports.

7. The substrate processing system as claimed in claim 6, wherein, Each flow-blocking pad defines a plurality of holes that provide fluid communication between the associated processing area and the transfer area when the substrate support is in an elevated position for processing.

8. The substrate processing system of claim 1, wherein the plurality of substrate supports includes at least three substrate supports distributed around the transfer region, and wherein the transfer device is located at the center between the plurality of substrate supports.

9. A semiconductor processing method, comprising: One or more processing precursors are delivered through multiple cap stacks of a substrate processing system, the substrate processing system including a system pre-pipeline and multiple throttle valves, the system pre-pipeline including multiple pre-pipeline tails, each of the multiple throttle valves being coupled in each of the multiple pre-pipeline tails, each of the multiple cap stacks fluidly entering and exiting a processing region among multiple processing regions, wherein each processing region among the multiple processing regions is at least partially defined by the cap stacks of the multiple cap stacks and a substrate support among multiple substrate supports; A pressure difference is formed between two processing zones in the plurality of processing zones, and the first throttle valve in the plurality of throttle valves is adjusted separately from the second throttle valve in the plurality of throttle valves to maintain the pressure difference between the two processing zones in the plurality of processing zones; Purified gas is delivered to the transfer area of ​​the substrate processing system via a plurality of purification channels extending through a transfer area housing that defines the transfer area, wherein the transfer area is fluidly coupled to each of the plurality of processing areas; and The processing precursor and the purifying gas are discharged via a pumping liner in each of the plurality of cap stacks.

10. The semiconductor processing method of claim 9, wherein the pressure difference between two processing regions of the plurality of processing regions is greater than or equal to 10 Torr.

11. The semiconductor processing method of claim 9, wherein the substrate processing system includes a transfer device located in the transfer region, the transfer device comprising: A rotatable shaft extending through the housing of the transfer region, and An end actuator coupled to the rotatable shaft, wherein the end actuator includes a central hub defining a central bore that is fluidly coupled to a purification source, and wherein the end actuator also includes a plurality of arms, the number of which is equal to the number of substrate supports among the plurality of substrate supports.

12. The semiconductor processing method of claim 9, wherein the delivery comprises: The first precursor is delivered to the first processing area of ​​two of the plurality of processing areas; and The second precursor is delivered to the second processing area of ​​the two processing areas of the plurality of processing areas.

13. The semiconductor processing method of claim 12, wherein the first precursor or the second precursor is a deposition precursor.

14. The semiconductor processing method of claim 9, wherein each of the plurality of substrate supports further comprises: A flow-blocking liner extending from each substrate support into the transfer region of the substrate processing system.

15. The semiconductor processing method of claim 14, wherein each flow-blocking pad defines a plurality of holes that provide fluid communication between the processing region and the transfer region when the substrate support is in a raised position for processing.

16. The semiconductor processing method of claim 15, wherein the purifying gas is delivered from the transfer region through the plurality of holes defined in the flow-blocking liner.

17. The semiconductor processing method of claim 9, wherein one or more processing precursors are restricted or prevented from flowing into the transfer region of the substrate processing system by the purifying gas.

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