Laser multi-beam processing apparatus and solar cell multi-beam processing method

Abstract

This invention provides a laser multibeam processing apparatus and a method for multibeam processing of solar cells. The laser multibeam processing apparatus includes: a laser generating system that emits a laser beam; a beam splitting and diffraction system that receives the laser beam and splits it into multiple beams; and a large field-of-view focusing system that receives the multiple laser beams from the beam splitting and diffraction system and outputs multiple parallel beams to process the substrate to be processed. This invention solves the problem of poor processing efficiency in existing laser multibeam processing apparatuses.

Description

Technical Field

[0001] This invention relates to the field of laser precision processing equipment technology, and more specifically, to a laser multi-beam processing device and a solar cell multi-beam processing method. Background Technology

[0002] With the development of technology, the solar cell industry has become very mature. However, compared with conventional energy sources, its higher cost has constrained its development. Extensive research has been conducted on how to reduce costs. Studies have found that increasing the size of solar cell panels has a significant positive impact on reducing overall costs.

[0003] Currently, some manufacturers have proposed a single-beam laser processing device that uses a focusing scanning method with a galvanometer and a field lens. While this method offers advantages such as high laser scanning speed and ease of editing processed patterns, leading to its widespread application in solar cell processing, the increasing size of solar cells makes the processing area, spot size, and spot uniformity significantly affected by the field lens focal length and design. This results in problems such as slow efficiency, complex equipment upgrades, and production capacity limited by the highest laser frequency for large-size cells.

[0004] Some manufacturers have proposed a laser multi-beam processing device to split the laser into multiple beams for parallel processing, which improves processing efficiency to some extent. However, this device has a limited number of beams, usually two, three, or four. As the size of solar cells increases, there are many scanning lines that require laser linear scanning in the processing pattern, and the quality of the above-mentioned beam splitting is difficult to guarantee, resulting in poor processing efficiency.

[0005] In other words, existing laser multibeam processing devices suffer from poor processing efficiency. Summary of the Invention

[0006] The main objective of this invention is to provide a laser multibeam processing device and a solar cell multibeam processing method to solve the problem of poor processing efficiency in existing laser multibeam processing devices.

[0007] To achieve the above objectives, according to one aspect of the present invention, a laser multibeam processing apparatus is provided, comprising: a laser generating system that emits a laser beam; a beam splitting and diffraction system that receives the laser beam and splits it into multiple beams; and a large field-of-view focusing system that receives the multiple laser beams from the beam splitting and diffraction system and outputs multiple parallel beams to process the substrate to be processed.

[0008] Furthermore, the beam splitting diffraction system includes one of a diffraction grating and a diffraction beam splitter.

[0009] Furthermore, the wide field-of-view focusing system includes one of the following: a scanning field lens, a spherical focusing lens group, an aspherical lens, and a lens group.

[0010] Furthermore, the laser multibeam processing apparatus also includes: a processing platform for supporting the substrate to be processed; and a moving device for driving the processing platform to move relative to the large field-of-view focusing system.

[0011] Furthermore, there are one or more large field-of-view focusing systems, and the processing platform and the large field-of-view focusing system are set up accordingly. When there are multiple large field-of-view focusing systems, the processing platform has multiple workstations, and each of the multiple workstations has a substrate to be processed. The multiple large field-of-view focusing systems are set up one-to-one with the multiple workstations to achieve simultaneous processing of multiple substrates to be processed.

[0012] Furthermore, the laser multibeam processing apparatus also includes: an attenuation system located between the laser generating system and the beam splitting and diffraction system, the attenuation system being used to adjust the energy of the laser beam; and / or a beam expander system located between the laser generating system and the beam splitting and diffraction system; and / or a reflector, one or more reflectors, at least one of which is provided between the laser generating system and the attenuation system, and between the attenuation system and the beam splitting and diffraction system; and / or a filter mask located on the light-emitting side of the large field-of-view focusing system to filter the laser beam.

[0013] Furthermore, the laser multibeam processing apparatus also includes a machine vision system, which is used to identify the position of the substrate to be processed.

[0014] Furthermore, the machine vision system includes a recognition camera and a dichroic mirror, which are spaced upstream of the beam splitting diffraction system. The dichroic mirror is located between the recognition camera and the beam splitting diffraction system, and the recognition camera and the beam splitting diffraction system are coaxially arranged.

[0015] Furthermore, the laser multibeam processing device also includes an adjustment fixture, on which the beam-splitting diffraction system, the large field-of-view focusing system, and the dichroic mirror are mounted. The adjustment fixture includes: a beam-splitting diffraction system frame, on which the beam-splitting diffraction system is adjustablely mounted; a large field-of-view focusing system frame, on which the large field-of-view focusing system is adjustablely mounted, and which is connected to and coaxially arranged with the beam-splitting diffraction system frame; and a dichroic mirror support frame, located on the side of the beam-splitting diffraction system frame away from the large field-of-view focusing system frame and angled to it.

[0016] Furthermore, the maximum diffraction angle range of the beam splitting diffraction system is 0.01° to 65°, and the number of beams ranges from 2 to 120; and / or the field-of-view focusing system has a field of view range of ±15° to ±33°, and the focal length of the field-of-view focusing system is 125mm-350mm.

[0017] Furthermore, the maximum diffraction angle range of the beam splitting diffraction system is 0.01° to 30°, and the number of beams ranges from 2 to 51; and / or the large field-of-view focusing system has a field of view range of ±15°, and the focal length of the large field-of-view focusing system is 125mm-350mm.

[0018] Furthermore, the optical parameters of the beam-splitting diffraction system and the large field-of-view focusing system satisfy:

[0019] d = F * θ0; Formula 1

[0020] θ0 = θ1 / N; Formula 2

[0021] Where θ1 is the total diffraction angle of the beam splitting diffraction system, θ0 is the angle between two adjacent laser beams, N is the number of beams, F is the focal length of the large field-of-view focusing system, and d is the distance between two adjacent laser beams of the multiple laser beams focused onto the substrate to be processed.

[0022] Furthermore, the beam splitting diffraction system is combined with a large field-of-view focusing system to split the laser beam into 2 to 51 beams; and / or the spacing between two adjacent laser beams in the multiple laser beams is in the range of 0.5 mm to 1.5 mm; the maximum positional deviation of the multiple laser spots on the substrate to be processed by the multiple laser beams is less than 0.03 mm; the outer diameter of the multiple laser spots on the substrate to be processed by the multiple laser beams is greater than or equal to 8 μm and less than or equal to 10 μm; the parallelism deviation of the multiple laser beams is less than 0.02°; the distance difference between two adjacent laser beams in the multiple laser beams does not exceed 0.006 mm; and the energy difference between at least two laser beams in the multiple laser beams does not exceed 10%.

[0023] According to another aspect of the present invention, a multi-beam processing method for solar cells is provided, wherein the above-mentioned laser multi-beam processing apparatus is used to perform laser processing on the substrate to be processed, and the size of the laser spot of the laser multi-beam processing apparatus is adapted to the pattern to be processed on the substrate to be processed, and the spacing between adjacent laser spots is equal to the spacing between the patterns to be processed.

[0024] Furthermore, the laser processing involves ablating the passivation film of crystalline silicon solar cells during electroplating. A pulsed laser is used as the laser generator in the laser multibeam processing device, wherein the wavelength of the pulsed laser is greater than or equal to 355 nm and less than or equal to 1064 nm; and / or the beam splitting diffraction system and the large field-of-view focusing system of the laser multibeam processing device are adjusted so that the spacing between two adjacent laser beams is in the range of 1 mm to 1.5 mm; and / or the laser spot size of the laser beam is 6 μm to 50 μm; and / or the number of beams is 10 to 50; and / or a scanning field lens with a focal length in the range of 100 mm to 200 mm and / or made of quartz is selected as the scanning field lens of the large field-of-view focusing system of the laser multibeam processing device; and / or the average processing speed of the laser multibeam processing device is set in the range of 200 mm / s to 2000 mm / s.

[0025] Furthermore, the laser processing involves PERC cell laser ablation, using a pulsed laser as the laser generator in the multi-beam laser processing device. The pulsed laser's wavelength is greater than or equal to 355 nm and less than or equal to 1064 nm. The beam splitting and diffraction systems and the large field-of-view focusing system of the multi-beam laser processing device are adjusted to ensure the distance between adjacent laser beams is between 1 mm and 1.5 mm. The laser spot size is between 20 μm and 50 μm. The number of beams is between 10 and 50. A scanning field lens with a focal length between 300 mm and 350 mm and / or made of quartz is selected as the scanning field lens for the large field-of-view focusing system of the multi-beam laser processing device. The average processing speed of the multi-beam laser processing device is set between 200 mm / s and 2000 mm / s.

[0026] Furthermore, the laser processing involves selective doping, using a pulsed laser as the laser generator in the laser multibeam processing device, wherein the wavelength of the pulsed laser is greater than or equal to 355 nm and less than or equal to 1064 nm; and / or adjusting the beam splitting diffraction system and the large field-of-view focusing system of the laser multibeam processing device to ensure that the spacing between two adjacent laser beams is in the range of 1.1 mm to 1.4 mm; and / or the laser spot size of the laser beam is 50 μm to 120 μm; and / or the number of beams is 10 to 50; and / or selecting a scanning field lens with a focal length in the range of 300 mm to 350 mm and / or using a quartz scanning field lens as the scanning field lens of the large field-of-view focusing system of the laser multibeam processing device; and / or setting the average processing speed of the laser multibeam processing device in the range of 200 mm / s to 2000 mm / s.

[0027] The laser multi-beam processing apparatus, using the technical solution of the present invention, includes a laser generating system, a beam splitting and diffraction system, and a large field-of-view focusing system. The laser generating system emits a laser beam; the beam splitting and diffraction system receives the laser beam and splits it into multiple beams; the large field-of-view focusing system receives the multiple laser beams from the beam splitting and diffraction system and outputs multiple parallel beams so that the multiple parallel beams can process the substrate to be processed.

[0028] By incorporating a beam-splitting diffraction system, a single laser beam can be split into multiple beams. These beams are then focused and output as parallel beams by a large field-of-view focusing system for processing the substrate. This achieves multi-beam parallel scanning processing, enabling the laser multi-beam processing apparatus of this application to process large-size solar cells while reducing the high performance requirements of the laser generation system and lowering costs. Simultaneously, it improves processing efficiency.

[0029] Furthermore, by combining the beam-splitting diffraction system with the scanning field lens, the number of beams is greatly increased, reaching over 100 beams, effectively improving production efficiency. This approach is not limited by the size of the substrate being processed, resolving the conflict between the processing area and the focused spot size. It also reduces the requirement for the highest frequency of the laser generator in the laser generation system. Simultaneously, this optical combination structure reduces processing errors and improves processing accuracy. The laser multi-beam processing device of this application has the advantages of simple structure, better stability, low cost, and good consistency in processing results, providing a new solution for high-quality, low-cost processing of large-size solar cells. Attached Figure Description

[0030] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0031] Figure 1 A schematic diagram of a laser multibeam processing apparatus according to an optional embodiment of the present invention is shown;

[0032] Figure 2 A schematic diagram of the beam splitting diffraction system of the present invention is shown;

[0033] Figure 3 A schematic diagram of the optical path of the beam splitting diffraction system and the large field-of-view focusing system of the present invention is shown;

[0034] Figure 4 A schematic diagram of multiple laser beams on a filter mask is shown;

[0035] Figure 5 A schematic diagram of the assembly and adjustment fixture of the present invention is shown;

[0036] Figure 6 A schematic diagram of the laser multibeam processing apparatus of the present invention performing single-track processing is shown.

[0037] Figure 7 A schematic diagram of the laser multibeam processing apparatus of the present invention performing multi-track processing is shown;

[0038] Figure 8 A laser spot scanning electron microscope image of the method for ablating the passivation film of a crystalline silicon solar cell according to the present invention is shown;

[0039] Figure 9 This shows a scanning electron microscope image of the laser spot in a prior art galvanometer scanning field mirror system;

[0040] Figure 10 It shows Figure 8 Scanning electron microscope image of a crystalline silicon solar cell after passivation film ablation;

[0041] Figure 11 It shows Figure 8 The absolute position deviation curve of the laser spot in the figure;

[0042] Figure 12 It shows Figure 8 The laser spot spacing deviation curve in the figure;

[0043] Figure 13 A scanning electron microscope image of the laser spot used in the method for ablating the passivation film of the PERC solar cell according to the present invention is shown.

[0044] Figure 14 A scanning electron microscope image of the laser spot in a prior art galvanometer scanning system is shown;

[0045] Figure 15 A scanning electron microscope image of the laser spot of the laser selective doping method of the present invention is shown;

[0046] Figure 16 A scanning electron microscope image of the laser spot in a prior art galvanometer scanning system is shown;

[0047] Figure 17 A diagram showing the compatibility between the beam splitting diffraction system and the large field-of-view focusing system of the present invention is provided.

[0048] The above figures include the following reference numerals:

[0049] 11. Laser; 12. Optical shutter; 20. Mirror; 30. Beam splitting and diffraction system; 40. Large field-of-view focusing system; 50. Substrate to be processed; 61. Half-wave plate; 62. Polarizing beam splitter; 63. Light shield; 70. Beam expander system; 80. Processing platform; 91. Recognition camera; 92. Dichroic mirror; 100. Filter mask; 201. Beam splitting and diffraction system frame; 202. Large field-of-view focusing system frame; 203. Dichroic mirror support frame. Detailed Implementation

[0050] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0051] It should be noted that, unless otherwise specified, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0052] In this invention, unless otherwise stated, directional terms such as "upper," "lower," "top," and "bottom" are generally used in relation to the direction shown in the accompanying drawings, or in relation to the vertical, perpendicular, or gravitational direction of the component itself; similarly, for ease of understanding and description, "inner" and "outer" refer to the inner and outer contours of each component itself, but the above directional terms are not intended to limit this invention.

[0053] To address the problem of poor processing efficiency in existing laser multibeam processing devices, this invention provides a laser multibeam processing device and a solar cell multibeam processing method.

[0054] like Figures 1 to 17 As shown, the laser multi-beam processing apparatus includes a laser generating system, a beam splitting and diffraction system 30, and a large field-of-view focusing system 40. The laser generating system emits a laser beam; the beam splitting and diffraction system 30 receives the laser beam and splits it into multiple beams; the large field-of-view focusing system 40 receives the multiple laser beams from the beam splitting and diffraction system 30 and outputs multiple parallel beams, so that the multiple parallel beams can process the substrate 50 (or other devices to be processed).

[0055] By setting up a beam splitting diffraction system 30, a single laser beam can be split into multiple laser beams. These multiple laser beams are then focused and output as parallel laser beams by a large field-of-view focusing system 40 for processing the substrate 50 (or other devices to be processed). This achieves a multi-beam parallel scanning processing method, enabling the laser multi-beam processing apparatus of this application to meet the processing requirements of large-size solar cells (or other devices to be processed). At the same time, it reduces the high requirements for the performance of the laser generation system, lowers costs, and improves processing efficiency.

[0056] It should be noted that the substrate 50 to be processed includes the solar cell to be processed.

[0057] The substrate 50 to be processed can also be a thin sheet or small sheet of crystal or solid material such as silicon, sapphire, SiC, GaN, silicon battery, thin film battery, perovskite tandem battery, metal or ceramic substrate workpiece.

[0058] Specifically, the aforementioned laser generating system may include a laser 11 and an optical shutter 12. The optical shutter 12 is disposed on the light-emitting side of the laser 11 and is used to control whether the laser 11 emits a laser beam. The laser 11 is used to emit monochromatic laser light with a wavelength of 300 nm to 1500 nm. Preferably, the laser wavelength emitted by the laser 11 is 355 nm or 532 nm.

[0059] The beam-splitting diffraction system 30 includes one of a diffraction grating and a diffraction beam splitter. More specifically, the beam-splitting diffraction system 30 includes diffraction gratings or diffraction beam splitters made of different substrate materials such as quartz or other optical glasses. The shape of the diffraction grating or diffraction beam splitter can be circular, square, or other shapes, and can be selected according to the actual situation. Specifically, the maximum diffraction angle range of the beam-splitting diffraction system 30 can be from 0.01° to 65°. Preferably, the maximum diffraction angle range can be from 0.01° to 30°. More preferably, depending on different processing devices, the diffraction angle range can be selected as 0.01°-7°, 7°-15°, 15°-30°, 30°-45°, 45°-65°, or other intermediate range values. The number of beams in the beam-splitting diffraction system 30 ranges from 2 to 51, optionally from 5 to 15, more preferably from 15 to 30, or from 30 to 51, from 51 to 80, from 80 to 120, or other intermediate range values.

[0060] The wide field-of-view focusing system 40 has a field of view range of ±15° to ±33°, or ±15° to ±20°, or ±15°, or other intermediate values, and a focal length of F125-F350, i.e., a focal length of 125mm-350mm, preferably 125-255mm, or other intermediate values. It can be one of a scanning field lens, a spherical focusing lens group, an aspherical lens, and a lens group.

[0061] The wide field-of-view focusing system 40 is preferably a scanning field lens. It can also be a focusing lens group, which includes multiple lenses. The lenses in the focusing lens group are one or more of spherical lenses and aspherical lenses. The focusing lens group can be a dynamic focusing lens group.

[0062] As a non-limiting implementation, the spherical lens group may include a first lens, a second lens, and a third lens sequentially from the object side to the image side, forming a flat-field lens group with a focal length of F125-F350, i.e., a focal length of 125mm-350mm. The object side of the first lens is flat, and the image side is convex; the object side of the second lens is convex, and the image side is flat; the object side of the third lens is concave, and the image side is flat. It should be noted that there are actually many structural types of focusing lens groups, and the number of lenses and the shapes of the two lens surfaces are also very diverse. The structure listed here is only one example. This application is not limited to this one type of focusing lens group, and different lens groups can be set according to actual application requirements.

[0063] The laser multi-beam processing apparatus of the present invention, through the combination of a large field-of-view focusing system 40 and a beam-splitting diffraction system 30, greatly increases the number of usable laser beams that are split by the beam-splitting diffraction system 30 and focused onto the device to be processed by the large field-of-view focusing system 40. The multiple laser beams split by the beam-splitting diffraction system 30 are focused onto the surface of the substrate 50 to be processed by the large field-of-view focusing system 40, and correspond one-to-one with multiple patterns to be processed on the substrate 50. Here, one-to-one correspondence means that the focused multiple laser beams respectively irradiate a portion of the pattern to be processed. Then, by moving the substrate 50 to be processed, the focused multiple laser beams move along the corresponding patterns to be processed, thereby completing the processing of the corresponding patterns.

[0064] like Figure 17 As shown, when the beam splitting diffraction system 30 and the large field-of-view focusing system 40 of the present invention are used together, their configuration is as follows: Figure 17 As shown in the figure. Where θ1 is the full diffraction angle of the beam-splitting diffraction system 30, θ0 is the angle between two adjacent laser beams, N is the number of beams, F is the focal length of the large field-of-view focusing system 40, and d is the distance between two adjacent laser beams of the multiple beams focused onto the substrate 50 to be processed. The above parameters satisfy the following formula:

[0065] d = F * θ0; Formula 1

[0066] θ0 = θ1 / N; Formula 2

[0067] The laser multi-beam processing apparatus of the present invention can, according to actual needs and in accordance with Formula 1 and Formula 2 above, select optical parameters of the beam-splitting diffraction system 30 and the large field-of-view focusing system 40 that match the requirements, so that the beam-splitting diffraction system 30 and the large field-of-view focusing system 40 meet the actual beam-splitting effect requirements. It should be noted that the specific parameters of the beam-splitting diffraction system 30 include the number of beams splitting N, the total diffraction angle θ1 (or the angle θ0 between two adjacent laser beams), and the uniformity of beam splitting energy, including but not limited to the above parameters.

[0068] The laser multi-beam processing apparatus of this application, through the above-described configuration, enables the beam splitting diffraction system 30, combined with the large field-of-view focusing system 40, to achieve a beam splitting range of 2 to 51 beams. Optionally, the beam splitting range is 5 to 15 beams; more preferably, the beam splitting range is 15 to 30 beams, or 30 to 51 beams, 51 to 80 beams, 80 to 120 beams, or other intermediate range values. Especially within the range of 15 to 30 beams, or 30 to 51 beams, the laser beams are spaced at predetermined intervals, and the maximum deviation of the laser spot position is guaranteed to be less than 0.03 mm, more preferably less than 25 μm.

[0069] Specifically, in the laser multi-beam processing device of the present invention, the parallelism deviation of the multiple laser beams is less than 0.02°, the distance difference between any two adjacent laser beams does not exceed 0.006mm, the maximum error of the absolute position accuracy of the focused spot is less than 0.03mm, and the energy difference between any two laser beams does not exceed 10%, preferably not more than 8%, more preferably not more than 6%, and most preferably not more than 3%.

[0070] The laser multibeam processing apparatus of this invention, through the combination of the beam-splitting diffraction system 30 and the scanning field mirror, significantly increases the number of beams, allowing up to 120 beams to be split, effectively improving production efficiency. It is not limited by the size of the substrate 50 to be processed, resolving the contradiction between the processing area and the focused spot size. Simultaneously, it reduces the requirement for the highest frequency of the laser 11 in the laser generation system, while also reducing processing errors and improving processing accuracy. The laser multibeam processing apparatus of this application has the advantages of simple structure, better stability, low cost, and good consistency in processing results, providing a new solution for high-quality, low-cost processing of large-size solar cells.

[0071] Generally, scanning field mirrors are used in conjunction with galvanometers. However, this application breaks through the conventional usage of scanning field mirrors by separating them from the galvanometers and using only the scanning field mirror without the galvanometers. This allows for optimized matching of the optical parameters of the diffraction beam splitting system and the scanning field mirror, significantly increasing the number of beams split. Furthermore, it ensures that even with a sufficient number of beams split, the spacing deviation between adjacent laser beams in the final emitted multi-beam output remains sufficiently small. Therefore, this method overcomes the inherent contradiction between the number of beams split and the splitting accuracy of ordinary beam splitting systems, while simultaneously ensuring processing efficiency and processing accuracy.

[0072] In some embodiments, in order to obtain light spots of different shapes, a shaping device is provided before the beam splitting diffraction system 30, such as a shaping device for shaping a Gaussian beam into a hat-shaped or square light spot. Without limitation, the shaping device can be a shaping diffraction optical device or a shaping lens, etc.

[0073] like Figure 1 As shown, the laser multibeam processing device also includes an attenuation system, which is located between the laser generation system and the beam splitting and diffraction system 30. The attenuation system is used to adjust the energy of the laser beam so that the energy of the adjusted laser beam meets the actual processing requirements.

[0074] Specifically, the attenuation system includes a half-wave plate 61, a polarizing beam splitter 62, and a light-shielding tube 63. The half-wave plate 61 and the polarizing beam splitter 62 are spaced apart, and the half-wave plate 61 is closer to the laser generation system than the polarizing beam splitter 62. The light-shielding tube 63 is located on one side of the polarizing beam splitter 62, and the line connecting the light-shielding tube 63 and the polarizing beam splitter 62 is perpendicular to the line connecting the polarizing beam splitter 62 and the half-wave plate 61.

[0075] like Figure 1 As shown, the laser multibeam processing device also includes a beam expander system 70, which is located between the laser generation system and the beam splitting and diffraction system 30. Specifically, the beam expander system 70 is located between the attenuation system and the beam splitting and diffraction system 30, so that the beam expander system 70 can adjust the scaling of the laser beam. The beam expander system 70 is a beam expander, which can be an electric beam expander.

[0076] Specifically, the laser multibeam processing apparatus also includes a reflector 20, which can be one or more. At least one reflector 20 is disposed between the laser generating system and the attenuation system, and between the attenuation system and the beam splitting and diffraction system 30. In this application, a reflector 20 is disposed between the laser generating system and the attenuation system, and between the attenuation system and the beam expanding system 70, so that the reflector 20 can deflect the laser beam, effectively plan the transmission direction of the laser beam, improve the reliability of the reflector 20, and at the same time, the placement of each system in the laser multibeam processing apparatus is reasonably allocated by the laser beam deflection, effectively compressing the internal space of the laser multibeam processing apparatus and ensuring the rationality of the size and shape of the laser multibeam processing apparatus.

[0077] Specifically, the laser multibeam processing apparatus also includes a processing platform 80, a moving device, and a machine vision system. The processing platform 80 is used to carry the substrate 50 to be processed. The moving device is driven to the processing platform 80 to move the processing platform 80. The machine vision system is used to identify the substrate 50 to be processed on the processing platform 80. Based on the position of the substrate 50 to be processed, the system drives the moving device to move the processing platform 80 in at least two directions, so that the processing platform 80 can move the substrate 50 to be processed in two dimensions in the horizontal plane.

[0078] Alternatively, the moving device can be connected to the mounting fixture and the machining platform 80 to move in one dimension and complete the scanning process.

[0079] It should be noted that the machine vision system mentioned above can be a coaxial machine vision system or a paraxial machine vision system.

[0080] like Figure 1 As shown, the machine vision system includes a recognition camera 91 and a dichroic mirror 92. The recognition camera 91 and the dichroic mirror 92 are positioned upstream of the beam splitter diffraction system 30, with the dichroic mirror 92 located between the recognition camera 91 and the beam splitter diffraction system 30. The recognition camera 91 and the beam splitter diffraction system 30 are coaxially arranged. This arrangement allows the dichroic mirror 92 to function as a filter, while the recognition camera 91 performs visual positioning. The dichroic mirror 92 is tilted at a 45-degree angle to the beam splitter diffraction system 30, ensuring that the line connecting the recognition camera 91 and the dichroic mirror 92 is perpendicular to the line connecting the beam expander system 70 and the dichroic mirror 92.

[0081] Specifically, the laser multibeam processing apparatus also includes a filter mask 100, which is located on the light-emitting side of the large field-of-view focusing system 40 to filter the laser beam, thereby filtering stray light and preventing it from affecting the substrate 50 to be processed. The filter mask 100 includes one or more of a circular aperture low-pass filter and a rectangular filter.

[0082] like Figure 5 As shown, the laser multibeam processing apparatus also includes an adjustment fixture. The beam-splitting diffraction system 30, the large field-of-view focusing system 40, and the dichroic mirror 92 are mounted on the adjustment fixture. The fixture includes a beam-splitting diffraction system frame 201, a large field-of-view focusing system frame 202, and a dichroic mirror support frame 203. The beam-splitting diffraction system 30 is adjustablely mounted on the beam-splitting diffraction system frame 201; the large field-of-view focusing system 40 is adjustablely mounted on the large field-of-view focusing system frame 202. The large field-of-view focusing system frame 202 is connected to and coaxially arranged with the beam splitting diffraction system frame 201; the dichroic mirror 92 is adjustablely mounted on the dichroic mirror support 203, which is located on the side of the beam splitting diffraction system frame 201 away from the large field-of-view focusing system frame 202 and is set at a 45-degree angle to the beam splitting diffraction system frame 201. That is, the dichroic mirror 92 is fixed above the beam splitting diffraction system 30 at a 45-degree tilt angle with the optical axis direction. This configuration provides mounting positions for the beam splitter diffraction system 30, the large field-of-view focusing system 40, and the dichroic mirror 92, improving their reliability. It also facilitates the adjustment of their positions, ensuring alignment between the beam splitter diffraction system 30 and the large field-of-view focusing system 40, and the dichroic mirror 92, thus maintaining consistency with the optical design.

[0083] like Figure 6 and Figure 7 As shown, the operating table of the processing platform 80 can be a single-station table or a multi-station table in parallel. A single-station table means that there is only one fixed station on the operating table for processing a substrate 50, and only one substrate 50 is processed at a time. A multi-station table in parallel means that there are multiple fixed stations for processing substrates 50 side by side on the operating table, and multiple substrates 50 can be processed at the same time.

[0084] Correspondingly, when the processing platform 80 is a single-station table and there is only one large-field-of-view focusing system 40, the laser multi-beam processing device performs single-track processing. When the processing platform 80 is a multi-station table, there are multiple large-field-of-view focusing systems 40, each corresponding to a different station table, so that the laser multi-beam processing device can perform multi-track processing, enabling simultaneous processing of multiple substrates 50 to be processed. Of course, having multiple large-field-of-view focusing systems 40 means that the laser multi-beam processing device can be multiple sets, each with a corresponding laser generation system, beam splitting and diffraction system 30, attenuation system, beam expander system 70, and filter mask 100.

[0085] It should be noted that the moving device of the aforementioned processing platform 80 includes an interactive motor system, mainly used to cooperate with the machine vision system for angle compensation. The substrate 50 to be processed is adsorbed onto the processing platform 80. The interactive motor system has two movement directions: X and Y. It has PSO (Precision Optimization) function, which can precisely control the length of the laser line on the substrate 50 to be processed, as well as the spacing of the laser spots that make up the laser line, and realize patterning. The moving distance of the interactive motor system is greater than or equal to 600 mm, and two M12 silicon wafers can be processed simultaneously. Preferably, the moving distance of the interactive motor system is greater than or equal to 1200 mm, and four M12 silicon wafers can be processed simultaneously. The moving speed is greater than 1000 mm / s, and can even reach 2000 mm / s, the acceleration is greater than 2g, and the positioning accuracy is less than 1 μm.

[0086] Of course, the laser multibeam processing device also includes a software control system, a transmission system, and a loading and unloading system to achieve automated solar cell processing. The substrate 50 to be processed includes crystalline silicon solar cells, gallium arsenide, perovskite, titanium dioxide, and organic thin-film batteries.

[0087] Compared to other multi-beam processing schemes, the laser multi-beam processing apparatus of the present invention, through its optimized optical system structure and parameter matching, ensures a sufficient number of beam splits while simultaneously guaranteeing good laser beam quality and accuracy, and also maintains the relationship between the laser spot's focal point and the processing area. In one embodiment, see... Figure 11 and 12A green picosecond pulsed laser 11 with a wavelength of 532 nm is used as the laser 11 in the laser multibeam processing device. The beam quality factor M of the green picosecond pulsed laser 11 is... 2 =1.1. The beam-splitting diffraction system 30 has a diffraction range of 10.2° and splits into 31 beams. The large field-of-view focusing system 40 uses a quartz scanning field lens with a focal length of 170 mm, a field of view of ±27°, and a maximum field-of-view telecentricity of less than 5°. The beam-splitting diffraction system 30 and the large field-of-view focusing system 40 are adjusted so that the spacing between any two adjacent laser beams in the 31 beams split by the beam-splitting diffraction system 30 is 1 mm. The quality and positional accuracy of the multiple laser spots are observed on the focal plane of the scanning field lens. The observation results show that: the morphology of the 31 laser spots is good, the laser spot diameter is 8 μm; the energy consistency error among the multiple laser spots is less than 8.5%; the maximum error in the absolute positional accuracy of the laser spots is less than 0.03 mm; and the maximum error in the laser spot spacing deviating from the theoretical value is less than 0.006 mm. Figure 8 The figure shows the absolute position deviation curve of the laser spot, in millimeters. Figure 12 The figure shows the laser spot spacing deviation curve, with units in millimeters.

[0088] The following are typical applications of the aforementioned laser multibeam processing device in the field of solar cell laser processing technology.

[0089] It should be noted that, in the field of laser processing of solar cells, such as laser ablation of PERC cells, selective heavy doping (SE) of cells, and non-destructive laser ablation of solar cell electroplating, the processed pattern is a series of stripes set at intervals.

[0090] During processing, the laser beam is split into multiple beams by the beam-splitting diffraction system 30. These multiple laser beams are then focused onto the surface of the substrate 50 to be processed by the large field-of-view focusing system 40. The distance between the laser spots focused by two adjacent laser beams is equal to the distance between the patterns to be processed. Preferably, the size of the laser spot is approximately equal to the width of the strip-shaped pattern to be processed. Then, by moving the substrate 50 along the length of the strip-shaped pattern, the processing of the corresponding pattern is completed. For the current large-sized substrate 50, there are generally dozens of strip-shaped patterns to be processed on the substrate 50, spaced apart. Correspondingly, the number of laser beams obtained by the beam-splitting diffraction system 30 can be equal to the number of patterns to be processed. In this way, the processing of the entire solar cell can be completed in one movement.

[0091] When the laser multi-beam processing apparatus of this application processes the substrate 50, the number of laser beams ranges from 2 to 120, optionally 5-15, more preferably 15-30, or 30-51, 51-80, or 80-120. As a non-limiting embodiment, the parallelism deviation of the multiple laser beams is less than 0.02°, the distance difference between any two adjacent laser beams does not exceed 0.006 mm, the maximum error in the absolute position accuracy of the focused spot is less than 0.03 mm, and the energy difference between any two laser beams does not exceed 10%, preferably not more than 8%, more preferably not more than 6%, and most preferably not more than 3%.

[0092] Specifically, the outer diameter of the focused spot is greater than or equal to 8 μm and less than or equal to 10 μm; the Rayleigh length of the focused spot is ±170.4 μm; the actual depth of focus ranges from ±40 μm to 57 μm; and the processing speed is within the range of 200 mm / s to 1200 mm / s. (The Rayleigh length and depth of focus are adjustable with the magnification of the beam expander, and are not fixed values; the above are typical values.)

[0093] Electroplating, as a metallization process for crystalline silicon solar cells, can replace screen-printed silver grid lines and electrodes, significantly reducing production costs. During processing, after coating, the passivation film on the electroplated metal grid lines is selectively removed using a laser. Then, metal grid lines and electrodes are electroplated in the removed areas. Because the width of the surface grid lines can block sunlight absorption, the narrower the grid lines, the better. Simultaneously, to ensure low current transmission loss, the resistance of the grid lines cannot be too high; therefore, the grid line height cannot be too low, otherwise the cross-sectional area will be too small, resulting in excessive resistance. Since the width of the electroplated grid lines is directly proportional to, or equal to, the diameter of the laser spot, the smaller the laser spot diameter, the better. Figures 8 to 10 As shown, this is a method for ablating the passivation film on crystalline silicon solar cells (including PERC, Topcon, HJT, etc.) during the electroplating process. The aforementioned laser multibeam processing device is used to ablate the passivation film on the crystalline silicon solar cell to be processed.

[0094] Specifically, the method for ablating the passivation film of crystalline silicon solar cells in the electroplating process includes: using a picosecond laser 11 as the laser generator of the laser multibeam processing device, wherein the wavelength of the picosecond laser 11 is greater than or equal to 355 nanometers and less than or equal to 1064 nanometers, preferably 355 nanometers; beam quality factor M 2<1.2; Adjust the beam splitting diffraction system 30 and the large field-of-view focusing system 40 of the laser multibeam processing device so that the beam splitting diffraction system 30 emits 41 laser beams and the spacing between two adjacent laser beams is 1 mm (corresponding to the pattern to be processed on the solar cell); Select a scanning field lens made of quartz with a focal length of 100 mm-200 mm as the scanning field lens of the large field-of-view focusing system 40; The surface of the crystalline silicon solar cell includes 123 straight lines with a spacing of 1 mm to be processed. The processing size on the crystalline silicon solar cell is 164 mm * 164 mm. The processing is carried out in three stages. Set the average processing speed of the laser multibeam processing device to 600 mm / s. Set the working frequency of the laser 11 to be greater than 200 K. It can process 2 pcs at the same time. The average processing time per cell is 0.95 seconds.

[0095] Theoretical simulation results show that the energy consistency error between laser spots is less than 8.5%; the maximum error in the absolute position accuracy of laser spots is less than 0.03 mm; and the maximum error in the laser spot spacing deviation from the theoretical value is less than 0.006 mm.

[0096] like Figure 8 and Figure 9 The images shown are microscope photographs of the passivation film of crystalline silicon solar cells after electroplating processes in this embodiment and the prior art, respectively, showing the morphology of the visible light spot processing (wherein...). Figure 8 For ease of observation and comparison, the laser spots are grouped within the same image. It can be seen that the 41 laser spots have good morphology, with a diameter of approximately 8 μm (adapted to the pattern to be processed; the specific spot diameter can be selected by those skilled in the art based on the pattern to be processed), and the difference in laser spot size is approximately 5%. In contrast, the maximum processing area of ​​existing technologies is 100*100 mm, and the difference in laser spot size is greater than 10%, with poor uniformity in the heat-affected zone. The solution proposed in this application is far superior to the solutions of existing technologies.

[0097] like Figure 10 The image shown is an appearance diagram of the crystalline silicon solar cell after processing in this embodiment.

[0098] Its advantages also include: 1. Low frequency and power requirements for the laser, which will not become a bottleneck for production capacity during iterative upgrades. 2. The laser spot can be further reduced without affecting the processing area. 3. The laser spot morphology at any position on the crystalline silicon solar cell is nearly uniform and is not affected by field curvature of the field lens.

[0099] In the method of ablating the passivation film of crystalline silicon solar cells during electroplating, the settings can be configured according to the pattern to be processed. As a typical application, the spot size can be 6-50 μm, and the number of beams can be 10-50. Preferably, the spot size is 6-10 μm, and the number of beams can be 30-50.

[0100] Laser ablation method for PERC cells. The aforementioned multi-beam laser processing device is used to ablate the passivation film on the PERC cells to be processed. The laser spot diameter for the PERC ablation process is in the range of 20μm to 40μm. The number of patterns to be processed is between 100 and 200. The motor travel is greater than 250mm, compatible with all cell sizes up to 230mm, and the processing time per cell is less than or equal to 1 second.

[0101] Specifically, the method for ablating the passivation film of PERC solar cells includes: using a nanosecond pulsed laser 11 as the laser generator of the laser multibeam processing device, wherein the wavelength of the nanosecond pulsed laser 11 is greater than or equal to 355 nanometers and less than or equal to 1064 nanometers, and the beam quality factor M... 2 <1.2, preferably a nanosecond pulsed laser 11 with a wavelength of 532 nm, a frequency range of 1K to 100K, and a power greater than or equal to 45W; adjust the beam splitting diffraction system 30 and the large field-of-view focusing system 40 so that the beam splitting diffraction system 30 splits into 50 beams and the spacing between two adjacent laser beams in the 50 beams is 1.1 mm (corresponding to the processing pattern); select a scanning field lens made of quartz with a focal length of 330 mm as the scanning field lens of the large field-of-view focusing system 40; the surface of the PERC cell includes 150 straight lines with a spacing of 1.1 mm to be processed, the processing size on the PERC cell is 164 mm * 164 mm, the processing is performed in three stages, the average processing speed of the laser multi-beam processing device is set to 800 mm / s, the working frequency of the laser 11 is greater than or equal to 30K, 2 pcs can be processed at the same time, and the average processing time per cell is 0.725 seconds.

[0102] Theoretical simulation results show that the energy consistency error between laser spots is less than 8.5%; the maximum error in the absolute position accuracy of laser spots is less than 0.03 mm; and the maximum error in the laser spot spacing deviation from the theoretical value is less than 0.006 mm.

[0103] Figure 13 and Figure 14 The images shown are scanning electron microscope (SEM) images of the processed product from this embodiment and the processed product from the prior art, respectively, illustrating the morphology of the processed spot. Figure 13 and Figure 14 The images shown are microscope photographs of PERC battery products after laser ablation in this embodiment and the prior art, respectively, showing the morphology of the laser spot processing.

[0104] like Figure 13 As shown, the morphology of the 50 laser spots is good, and the diameter of the laser spots is about 30 μm. Preferably, the diameter of the laser spots is greater than or equal to 27 μm and less than or equal to 28 μm (adapted to the pattern to be processed; those skilled in the art can select the specific spot diameter based on the pattern to be processed).

[0105] like Figure 14 As shown, the morphology of the processed light spot is visible using a galvanometer scanning system in the existing technology (under different fields of view). The galvanometer scanning speed is greater than or equal to 45 m / s, the laser 11 frequency needs to be greater than or equal to 1500 K, and the processing time is approximately 0.75 s. If production capacity is to be further upgraded, the laser 11 will become the bottleneck.

[0106] In the method of ablating the passivation film of PERC solar cells, the settings can be configured according to the pattern to be processed. As a typical application, the spot size can be 20-50μm and the number of beams can be 10-50. Preferably, the spot size can be 20-40μm and the number of beams can be 30-50.

[0107] Laser Selective Doping (LDSE) Method. The aforementioned multi-beam laser processing apparatus is used for laser selective doping of the PERC solar cells to be processed. A 100μm x 100μm laser spot size is used for laser selective doping. The number of patterns to be processed is between 100 and 200. The motor travel is greater than or equal to 250mm, compatible with all PERC solar cells up to 230mm in diameter, and the processing time per cell is less than or equal to 1 second.

[0108] Specifically, the laser selective doping method includes: using a nanosecond pulsed laser 11 as the laser generator system of a laser multibeam processing device, wherein the wavelength of the nanosecond pulsed laser 11 is greater than or equal to 355 nanometers and less than or equal to 1064 nanometers, and the beam quality factor M... 2 <1.2, preferably a nanosecond pulsed laser 11 with a wavelength of 532 nm, a laser frequency between 0 and 10 kHz, and a power greater than or equal to 40 W; adjust the beam splitting diffraction system 30 and the large field-of-view focusing system 40 of the laser multi-beam processing device so that the beam splitting diffraction system 30 splits into 40 beams, and the spacing between any two adjacent laser beams is 1.367 mm (corresponding to the pattern to be processed); select a quartz scanning field lens with a focal length of 330 mm as the scanning field lens of the large field-of-view focusing system 40; the PERC cell surface includes a pattern to be processed consisting of 120 straight lines spaced 1.367 mm apart, the processing size on the PERC cell is 164 mm * 164 mm, the processing is performed in three stages, and the average processing speed of the laser multi-beam processing device is set to 800 mm / s. The operating frequency of the laser 11 is set to be greater than or equal to 8 kHz, and 2 cells can be processed simultaneously, with an average processing time of 0.725 seconds per cell.

[0109] Figure 15 and Figure 16 The images shown are scanning electron microscope (SEM) images of the processed product from this embodiment and the processed product from the prior art, respectively, illustrating the morphology of the processed spot. Figure 15 and Figure 16 The images shown are microscope photographs of the laser-selective doped products of this embodiment and the prior art, respectively, showing the morphology of the visible light spot processing.

[0110] like Figure 15 As shown, the morphology of the 40 laser spots is good, with a laser spot diameter of about 100μm*100μm. The preferred laser spot size is greater than or equal to 95μm and less than or equal to 100μm (adapted to the pattern to be processed; the specific spot diameter can be selected by those skilled in the art based on the pattern to be processed).

[0111] like Figure 16 As shown, the morphology of the visible light spot after processing (under different fields of view) using a galvanometer scanning system in the existing technology is illustrated. The galvanometer scanning speed is greater than or equal to 40 m / s, the laser 11 frequency needs to be greater than or equal to 400 K, and the processing time is approximately 0.75 s. If production capacity is to be further upgraded, the laser 11 may become a bottleneck. Furthermore, a galvanometer with a higher scanning speed and a larger field mirror would be required. Additionally, the laser spot at the edge of the field mirror is slightly worse than the laser spot in the central area, and there is a certain tilting angle.

[0112] In the laser selective doping method, the settings can be configured according to the pattern to be processed. As a typical application, the spot size can be 50-120μm and the number of beams can be 10-50. Preferably, the spot size can be 80-100μm and the number of beams can be 30-50.

[0113] As a comparative example, this paper presents a method for ablating the passivation film of crystalline silicon solar cells (including PERC, Topcon, HJT, etc.) in existing electroplating processes. The difference between this method and the implementation lies in the use of a galvanometer and a field lens for scanning and focusing. When the laser spot size ranges from 6μm to 10μm, the processing area of ​​the field lens used needs to be less than or equal to 100mm*100mm. It cannot directly process complete 166 / 182 / 210 solar cells, requiring a mosaicking approach. This involves dividing the processing area into multiple parts and processing them piece by piece to form a complete pattern. Processing at a speed of 25m / s, the time for processing the same pattern using this method for ablating the passivation film of crystalline silicon solar cells is approximately 1.2s. When the laser spot size is less than 5μm, a field lens with a smaller focal length is required, resulting in a working area less than 50*50mm. This leads to high mosaicking difficulty, low processing efficiency, and a processing time greater than 2s. Furthermore, the laser 11 frequency is required to be greater than or equal to 8000kHz, making the laser 11 a bottleneck when further increasing production capacity.

[0114] The above are typical applications of the aforementioned laser multibeam processing device. Specifically, the application scenarios include, but are not limited to, near-surface processing processes such as cutting, welding, doping, and ablation of workpieces for separating crystal or solid materials such as silicon, sapphire, SiC, and GaN into thin sheets or small sheets, silicon cells, thin-film cells, perovskite tandem cells, and photovoltaic modules, as well as processing processes such as cutting, welding, and surface modification of metal or ceramic workpieces.

[0115] Obviously, the embodiments described above are merely some, not all, embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort should fall within the scope of protection of the present invention.

[0116] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0117] It should be noted that the terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in sequences other than those illustrated or described herein.

[0118] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A laser multibeam processing device, characterized in that, include: A laser generating system that emits a laser beam; A beam splitting diffraction system (30) is used to receive the laser beam and split the laser beam into multiple beams; A large field-of-view focusing system (40) is used to receive multiple laser beams from the beam splitting diffraction system (30) and output multiple parallel beams so that the multiple parallel beams can process the substrate (50) to be processed; the large field-of-view focusing system (40) is a scanning field lens, and the focal length of the large field-of-view focusing system (40) is 125mm-350mm; and no galvanometer is provided in the laser multi-beam processing device; The maximum diffraction angle range of the beam splitting diffraction system (30) is 0.01° to 65°, and the maximum number of beams is 120; the large field-of-view focusing system (40) has a field of view range of ±15° to ±33°.

2. The laser multibeam processing apparatus according to claim 1, characterized in that, The beam splitting diffraction system (30) includes one of a diffraction grating and a diffraction beam splitter.

3. The laser multibeam processing apparatus according to claim 1, characterized in that, The laser multibeam processing device also includes: A processing platform (80) is used to support the substrate (50) to be processed. A moving device that drives the processing platform (80) to move relative to the large field-of-view focusing system (40).

4. The laser multibeam processing apparatus according to claim 3, characterized in that, The large field-of-view focusing system (40) is one or more, and the processing platform (80) and the large field-of-view focusing system (40) are correspondingly set. When there are multiple large field-of-view focusing systems (40), the processing platform (80) has multiple workstations, and the substrates to be processed (50) are correspondingly set on each of the multiple workstations. The multiple large field-of-view focusing systems (40) and the multiple workstations are correspondingly set one by one to realize the simultaneous processing of multiple substrates to be processed (50).

5. The laser multibeam processing apparatus according to claim 1, characterized in that, The laser multibeam processing device also includes: An attenuation system, located between the laser generating system and the beam splitting diffraction system (30), is used to adjust the energy of the laser beam; and / or A beam expanding system (70) is located between the laser generating system and the beam splitting diffraction system (30); and / or Reflector (20), wherein there are one or more reflectors (20), and at least one of the reflectors (20) is disposed between the laser generating system and the attenuation system, and between the attenuation system and the beam splitting diffraction system (30); and / or A filter mask (100) is located on the light-emitting side of the large field-of-view focusing system (40) to filter the laser beam.

6. The laser multibeam processing apparatus according to claim 1, characterized in that, The laser multibeam processing apparatus also includes a machine vision system for identifying the position of the substrate (50) to be processed.

7. The laser multibeam processing apparatus according to claim 6, characterized in that, The machine vision system includes a recognition camera (91) and a dichroic mirror (92). The recognition camera (91) and the dichroic mirror (92) are spaced apart and positioned upstream of the beam splitting diffraction system (30). The dichroic mirror (92) is located between the recognition camera (91) and the beam splitting diffraction system (30). The recognition camera (91) and the beam splitting diffraction system (30) are coaxially arranged.

8. The laser multibeam processing apparatus according to claim 7, characterized in that, The laser multibeam processing device further includes an adjustment fixture, on which the beam splitting diffraction system (30), the large field-of-view focusing system (40), and the dichroic mirror (92) are mounted. The adjustment fixture includes: The beam splitting diffraction system frame (201) is adjustablely mounted on the beam splitting diffraction system frame (201); A large field-of-view focusing system frame (202) is provided, wherein the large field-of-view focusing system (40) is adjustablely mounted on the large field-of-view focusing system frame (202), and the large field-of-view focusing system frame (202) is connected to and coaxially mounted with the beam splitting diffraction system frame (201); Dichroic mirror support (203) is located on the side of the beam splitter diffraction system frame (201) away from the large field-of-view focusing system frame (202) and is set at an angle to the beam splitter diffraction system frame (201).

9. The laser multibeam processing apparatus according to claim 1, characterized in that, The number of bundles ranges from 2 to 120.

10. The laser multibeam processing apparatus according to claim 1, characterized in that, The beam splitting diffraction system (30) has a maximum diffraction angle range of 0.01° to 30° and a beam splitting number range of 2 to 51 beams; and the large field-of-view focusing system (40) has a field of view range of ±15°.

11. The laser multibeam processing apparatus according to claim 9 or 10, characterized in that, The optical parameters of the beam splitting diffraction system (30) and the large field-of-view focusing system (40) satisfy: d = F * θ0; Formula 1 θ0 = θ1 / N; Formula 2 Wherein, θ1 is the full diffraction angle of the beam splitting diffraction system (30), θ0 is the angle between two adjacent laser beams, N is the number of beams, F is the focal length of the large field-of-view focusing system (40), and d is the distance between two adjacent laser beams of the multiple laser beams focused on the substrate to be processed (50).

12. The laser multibeam processing apparatus according to claim 9 or 10, characterized in that, The beam splitting diffraction system (30) is used in conjunction with the large field-of-view focusing system (40) to split the laser beam into 2 to 51 beams; and / or The interval between two adjacent laser beams in the plurality of laser beams is in the range of 0.5 mm to 1.5 mm; and / or The maximum positional deviation of the multiple laser beams on the substrate (50) being processed is less than 0.03 mm; and / or The outer diameter of multiple laser beams on the substrate (50) is greater than or equal to 8 μm and less than or equal to 10 μm; and / or The parallelism deviation of the multiple laser beams is less than 0.02°; and / or The distance difference between any two adjacent laser beams in the plurality of laser beams does not exceed 0.006 mm; and / or The energy difference between at least two of the laser beams in the plurality of laser beams does not exceed 10%.

13. A method for processing multi-beam solar cells, characterized in that, The laser multibeam processing apparatus according to any one of claims 1 to 12 is used to perform laser processing on the substrate (50) to be processed, so that the size of the laser spot of the laser multibeam processing apparatus is adapted to the pattern to be processed on the substrate (50), and the distance between adjacent laser spots is equal to the distance between the patterns to be processed.

14. The method for multi-beam processing of solar cells according to claim 13, characterized in that, The laser processing involves the ablation of the passivation film on the crystalline silicon solar cell during the electroplating process. A pulsed laser is used as the laser generating system of the laser multibeam processing apparatus, wherein the wavelength of the pulsed laser is greater than or equal to 355 nm and less than or equal to 1064 nm; and / or Adjust the beam splitting diffraction system (30) and the large field-of-view focusing system (40) of the laser multibeam processing apparatus so that the spacing between two adjacent laser beams is in the range of 1 mm to 1.5 mm; and / or The laser beam has a laser spot size of 6μm-50μm; and / or The number of bundles is 10-50; and / or A quartz scanning field lens is selected as the scanning field lens for the large field-of-view focusing system (40) of the laser multibeam processing apparatus; and / or The average processing speed of the laser multibeam processing device is set to be in the range of 200 mm / s to 2000 mm / s.

15. The multi-beam processing method for solar cells according to claim 13, characterized in that, The laser processing is PERC cell laser ablation. A pulsed laser is used as the laser generating system of the laser multibeam processing apparatus, wherein the wavelength of the pulsed laser is greater than or equal to 355 nm and less than or equal to 1064 nm; and / or Adjust the beam splitting diffraction system (30) and the large field-of-view focusing system (40) of the laser multibeam processing apparatus so that the spacing between two adjacent laser beams is in the range of 1 mm to 1.5 mm; and / or The laser beam has a laser spot size of 20μm-50μm; and / or The number of bundles is 10-50; and / or A scanning field lens with a focal length in the range of 300 mm to 350 mm and / or made of quartz is selected as the scanning field lens of the large field-of-view focusing system (40) of the laser multibeam processing apparatus; and / or The average processing speed of the laser multibeam processing device is set to be in the range of 200 mm / s to 2000 mm / s.

16. The method for multi-beam processing of solar cells according to claim 13, characterized in that, The laser processing is laser-selective doping. A pulsed laser is used as the laser generating system of the laser multibeam processing apparatus, wherein the wavelength of the pulsed laser is greater than or equal to 355 nm and less than or equal to 1064 nm; and / or Adjust the beam splitting diffraction system (30) and the large field-of-view focusing system (40) of the laser multibeam processing apparatus so that the spacing between two adjacent laser beams is in the range of 1.1 mm to 1.4 mm; and / or The laser beam has a laser spot size of 50μm-120μm; and / or The number of bundles is 10-50; and / or A scanning field lens with a focal length in the range of 300 mm to 350 mm and / or made of quartz is selected as the scanning field lens of the large field-of-view focusing system (40) of the laser multibeam processing apparatus; and / or The average processing speed of the laser multibeam processing device is set to be in the range of 200 mm / s to 2000 mm / s.

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