Growth substrate and method of transferring microcomponents

Abstract

The application discloses a growth substrate and a transfer method of micro components. The growth substrate comprises a substrate, a plurality of micro components and a plurality of barrier walls, which are arranged at intervals on a first surface of the substrate, and the barrier walls are arranged in the intervals between adjacent micro components; and a sacrificial adhesive layer is arranged on the first surface and covers at least the side surfaces of the micro components and the barrier walls. The micro components, the barrier walls and the sacrificial adhesive layer can be separated from the substrate and transferred to a temporary substrate. Before the micro components are transferred from the temporary substrate, the sacrificial adhesive layer around the micro components to be transferred can be removed. Through the above design, the application can reduce the probability of rotation or deviation of the micro components in the transfer process.

Description

Technical Field

[0001] This application belongs to the field of display technology, specifically relating to a method for transferring growth substrates and micro-components. Background Technology

[0002] With the development of traditional flat panel displays and micro-projection displays, Micro-LED inorganic light-emitting diode technology, a promising mainstream core display technology, has significant performance advantages and is therefore attracting increasing attention. Micro-LED can be considered a miniaturized LED that can be lit individually. It has advantages such as low power consumption, high brightness, high definition, and long lifespan, and is poised to become a new display technology that can rival AMOLED displays in the future.

[0003] Currently, during the LED transfer process, issues such as LED rotation or misalignment can easily occur, resulting in a low transfer yield. Summary of the Invention

[0004] This application provides a method for transferring growth substrates and micro-components to reduce the probability of micro-components rotating or shifting during the transfer process.

[0005] To solve the above-mentioned technical problems, one technical solution adopted in this application is: providing a growth substrate, comprising: a substrate; a plurality of micro-elements and a plurality of baffles, spaced apart on one side of a first surface of the substrate, with the baffles disposed within the gaps between adjacent micro-elements; a sacrificial adhesive layer, located on the first surface, and at least covering the sides of the micro-elements and the baffles; wherein the micro-elements, the baffles, and the sacrificial adhesive layer are detachable from the substrate and transferred to a temporary substrate; and before transferring the micro-elements from the temporary substrate, the sacrificial adhesive layer around the micro-elements to be transferred can be removed.

[0006] To solve the above-mentioned technical problems, another technical solution adopted in this application is: to provide a method for transferring micro-devices, comprising: providing a growth substrate as described in any of the above embodiments, and providing a temporary substrate; placing the surface of the growth substrate on which the micro-device is disposed opposite to and in contact with the temporary substrate; detaching the micro-device, the barrier wall, and the sacrificial adhesive layer from the substrate; removing the substrate; selectively removing at least one of the sacrificial adhesive layers between the micro-device and the surrounding barrier wall; and transferring the micro-device from which the sacrificial adhesive layer has been removed.

[0007] Unlike existing technologies, the advantages of this application are as follows: The growth substrate provided in this application includes a plurality of micro-elements and a plurality of baffles spaced apart on a first surface of the substrate; baffles are disposed within the gaps between adjacent micro-elements; and a sacrificial adhesive layer covers at least the sides of the micro-elements and the baffles. Furthermore, the baffles and sacrificial adhesive layer can be detached from the substrate along with the micro-elements onto a temporary substrate; and before transferring the micro-elements from the temporary substrate, the sacrificial adhesive layer around the micro-elements to be transferred can be removed. On the one hand, the introduction of the baffles effectively increases the bonding support force between the micro-elements and the temporary substrate, enhancing the bonding strength. During laser substrate removal, the micro-elements can maintain their original positions, reducing the probability of rotation or displacement of the micro-elements during laser substrate removal. Furthermore, the introduction of the sacrificial adhesive layer can further fix the relative positions of the micro-elements, reducing the probability of displacement of the micro-elements during laser substrate removal. On the other hand, when selectively picking up micro-components, the sacrificial adhesive layer can be removed, so it will not affect the transfer process of the micro-components. In addition, due to the effect of the barrier, the impact on adjacent micro-components during the picking process can be reduced, thereby improving the positional accuracy of adjacent micro-components and thus improving the transfer yield. Attached Figure Description

[0008] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0009] Figure 1 This is a schematic diagram of the structure of one embodiment of the growth substrate of this application;

[0010] Figure 2 This is a schematic diagram of another embodiment of the growth substrate of this application;

[0011] Figure 3 for Figure 1 A top view of one embodiment of the retaining wall;

[0012] Figure 4 for Figure 1 A schematic diagram of the structure of a micro-element in one embodiment;

[0013] Figure 5 for Figure 1 A schematic diagram of another embodiment of micro-components;

[0014] Figure 6 This is a flowchart illustrating one embodiment of the micro-element transfer method of this application;

[0015] Figure 7aThis is a schematic diagram of the structure of one embodiment of the temporary substrate;

[0016] Figure 7b for Figure 6 A schematic diagram of the structure of one embodiment corresponding to step S102;

[0017] Figure 7c for Figure 6 A schematic diagram of the structure of one embodiment corresponding to step S103;

[0018] Figure 7d for Figure 6 A schematic diagram of the structure of one embodiment corresponding to step S104;

[0019] Figure 7e for Figure 6 A schematic diagram of the structure of one embodiment corresponding to step S105. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0021] Please see Figure 1 , Figure 1This is a schematic diagram of the structure of a growth substrate according to an embodiment of this application. The growth substrate 1 includes: a substrate 10, a plurality of micro-elements 12, a plurality of baffles 14, and a sacrificial adhesive layer 18. The micro-elements 12 may be micro-LEDs, etc., and the light emitted by the plurality of micro-elements 12 may be the same or different colors; this application does not limit this. The plurality of micro-elements 12 and the plurality of baffles 14 may be disposed at intervals on the first surface 100 of the substrate 10, and baffles 14 are disposed within the intervals between adjacent micro-elements 12; the sacrificial adhesive layer 18 is located on the first surface 100 and at least covers the sides of the micro-elements 12 and the baffles 14. The micro-elements 12, baffles 14, and sacrificial adhesive layer 18 can be detached from the substrate 10 and transferred to a temporary substrate; and before transferring the micro-elements 12 from the temporary substrate, the sacrificial adhesive layer 18 around the micro-elements 12 to be transferred can be removed. On the one hand, the introduction of the barrier 14 increases the bonding support force between the micro-element 12 and the temporary substrate, enhancing the bonding strength. During laser stripping of the substrate 10, the micro-element 12 can maintain its original position, reducing the probability of rotation or displacement during the process. Furthermore, the introduction of the sacrificial adhesive layer 18 further fixes the relative position of the micro-element 12, reducing the probability of positional shift during laser stripping. On the other hand, when selectively picking up a micro-element 12, the sacrificial adhesive layer 18 can be removed, thus not affecting the transfer process. Additionally, the barrier 14 reduces the impact on other micro-element 12 adjacent to the micro-element to be picked up during the picking process, thereby improving the positional accuracy of adjacent micro-element 12 and increasing the transfer yield.

[0022] Optionally, in this embodiment, as Figure 1As shown, multiple micro-elements 12 and multiple baffles 14 can directly contact the substrate 10, which can be made of materials such as sapphire. The material of the micro-element 12 facing the substrate 10 has a first bandgap energy, the material of the baffle 14 facing the substrate 10 has a second bandgap energy, and the substrate 10 has a third bandgap energy, where both the first and second bandgap energies are less than the third bandgap energy. When the substrate 10 is detached using laser ablation, the laser radiation energy can be less than the third bandgap energy, but greater than the maximum value of the first and second bandgap energies. At this time, the substrate 10 is transparent to the laser, and the laser can pass directly through the substrate 10; while the material of the micro-element 12 facing the substrate 10 and the material of the baffle 14 facing the substrate 10 will strongly absorb the laser and evaporate, thereby achieving the detachment of the substrate 10 from the micro-element 12 or the baffle 14. In the above design, multiple micro-elements 12 and multiple baffles 14 can detach from the substrate 10 simultaneously through laser irradiation with the same radiation energy, resulting in high efficiency. Furthermore, during the separation process of the sacrificial adhesive layer 18 and the substrate 10, the sacrificial adhesive layer 18 can have a fourth bandgap energy, and the radiation energy of the laser can be less than the fourth bandgap energy. In this case, during the separation process from the substrate 10, the sacrificial adhesive layer 18 will not be ashed and removed. The sacrificial adhesive layer 18 and the substrate 10 are connected by adhesive force. Subsequently, as long as the adhesive force between the sacrificial adhesive layer 18 and the temporary substrate is greater than the adhesive force between the substrate 10 and the sacrificial adhesive layer 18, the sacrificial adhesive layer 18 can be separated from the substrate 10.

[0023] Alternatively, please refer to Figure 2 , Figure 2 This is a schematic diagram of another embodiment of the growth substrate of this application. An adhesive layer 16 is disposed on the first surface 100 of the substrate 10. Multiple micro-element 12, multiple barrier walls 14, and a sacrificial adhesive layer 18 can contact the surface of the adhesive layer 16 opposite to the substrate 10. In this embodiment, the substrate 10 can be made of glass, etc., and the adhesive layer 16 can be made of BCB (benzocyclobutene) or PI (polyimide), etc. At this time, the substrate 10 has a third bandgap energy, and the adhesive layer 16 has a fourth bandgap energy. The radiation energy of the laser beam irradiated by the laser can be less than the third bandgap energy but greater than the fourth bandgap energy. The substrate 10 is transparent to the laser, and the laser can pass directly through the substrate 10. The adhesive layer 16 strongly absorbs the laser and is evaporated, thereby achieving the detachment of the substrate 10 from the micro-element 12 or the barrier wall 14. In the above design, multiple micro-element 12 and multiple barrier walls 14 can detach from the substrate 10 simultaneously through laser irradiation with the same radiation energy, resulting in high efficiency.

[0024] Please refer to the following: Figure 1 and Figure 3 , Figure 3 for Figure 1A top view schematic diagram of one embodiment of the baffle wall. In this embodiment, there is a gap between the baffle wall 14 and the adjacent micro-element 12. This design can reduce the resistance when picking up the micro-element 12 from the temporary substrate. Furthermore, the baffle wall 14 is arranged around the periphery of the micro-element 12; at this time, the baffle wall 14 is equivalent to forming a sealing structure around the micro-element 12, thereby further reducing the impact on other adjacent micro-element 12 during selective picking; and the baffle wall 14 can play a certain limiting role for the micro-element 12 located within the baffle wall 14, reducing the probability of its position shifting during laser stripping. Optionally, as Figure 3 As shown, multiple baffles 14 are interconnected to form multiple openings 144, and a micro-element 12 is disposed within each opening 144. This design can reduce the manufacturing difficulty of the baffles 14, reduce the area occupied by the baffles 14, and increase the arrangement density of the micro-element 12. Optionally, in this embodiment, the opening 144 can be a cylindrical hole, a prismatic hole, etc., and this application is not limited thereto.

[0025] Of course, in other embodiments, the structural design of the retaining wall 14 can also be different. For example, the retaining wall 14 is annular, with a retaining wall 14 arranged around the periphery of a micro-element 12. As another example, the retaining wall 14 is strip-shaped, with adjacent retaining walls 14 spaced apart from each other, and at least one retaining wall 14 is arranged around the periphery of a micro-element 12.

[0026] Furthermore, in this embodiment, the barrier 14 is made of the same material as at least a portion of the film layer in the micro-element 12. This design allows the barrier 14 to be formed simultaneously with the micro-element 12 on the substrate 10, thereby reducing the complexity of the fabrication process.

[0027] Optionally, such as Figure 1As shown, when the micro-element 12 is a horizontal structure, it includes a light-emitting layer group 120 and a first electrode 122 and a second electrode 124 located on the light-emitting layer group 120. The barrier 14 includes a first film layer group 140 and a third electrode 142 located on the first film layer group 140. The first film layer group 140 is made of the same material as the light-emitting layer group 120, and the third electrode 142 is made of the same material as either the first electrode 122 or the second electrode 124. In this embodiment, the barrier 14 can be referred to as a dummy LED. This barrier 14 can not only be fabricated simultaneously with the micro-element 12, but its height can also be close to or even the same as the height of the micro-element 12 to improve its limiting effect and further reduce the impact on other adjacent micro-element 12s that do not need to be picked up during selective pickup. Of course, in other embodiments, the structure of the barrier 14 can also be other; for example, the barrier 14 includes a portion of the film layer of the light-emitting layer group 120 in the micro-element 12 and a first electrode 122 and a second electrode 124 located on the portion of the film layer; that is, as long as the barrier 14 does not have the light-emitting performance of the micro-element 12.

[0028] In an application scenario, such as Figure 4 As shown, Figure 4 for Figure 1 A schematic diagram of a micro-element embodiment. In the direction away from the substrate 10 (e.g., ... Figure 4 In the direction indicated by X, the light-emitting layer group 120 includes a first type semiconductor layer 1200, a light-emitting layer 1202, and a second type semiconductor layer 1204 stacked sequentially. The first type semiconductor layer 1200 includes a first region A exposed from the light-emitting layer 1202, and a first electrode 122 is disposed on the first region A. A second electrode 124 is disposed on the side of the second type semiconductor layer 1204 opposite to the light-emitting layer 1202. Optionally, the first electrode 122 is an n-type electrode, and the second electrode 124 is a p-type electrode. Correspondingly, the first type semiconductor layer 1200 is an n-type semiconductor layer, and the second type semiconductor layer 1204 is a p-type semiconductor layer; or the first electrode 122 is a p-type electrode, and the second electrode 124 is an n-type electrode. Correspondingly, the first type semiconductor layer 1200 is a p-type semiconductor layer, and the second type semiconductor layer 1204 is an n-type semiconductor layer. Furthermore, the first type semiconductor layer 1200 and the second type semiconductor layer 1204 can be made of GaN, except that one is n-type and the other is p-type.

[0029] Furthermore, such as Figure 5 As shown, Figure 5 for Figure 1A schematic diagram of one embodiment of the middle retaining wall. In the direction away from the substrate 10, the first film layer group 140 includes a first film layer 1400, a second film layer 1402, a third film layer 1404, and a third electrode 142 stacked sequentially. The first film layer 1400 is made of the same material as the first type semiconductor layer 1200, and both can be formed simultaneously. The second film layer 1402 is made of the same material as the light-emitting layer 1202, and both can be formed simultaneously. The third film layer 1404 is made of the same material as the second type semiconductor layer 1204, and both can be formed simultaneously. The third electrode 142 can be made of the same material as either the first electrode 122 or the second electrode 124, and both can be formed simultaneously. Optionally, in this embodiment, the orthographic projections of the first film layer 1400, the second film layer 1402, the third film layer 1404, and the third electrode 142 on the substrate 10 can overlap.

[0030] Alternatively, when the microelement has a vertical structure, it may include a light-emitting layer group and a first electrode located on the light-emitting layer group. In this case, the barrier may include a first film layer group and a third electrode located on the first film layer group. The first film layer group is made of the same material as some of the film layers in the light-emitting layer group, and the third electrode is made of the same material as the first electrode; or, the barrier may only include the first film layer group, which is made of the same material as the film layers in the light-emitting layer group. That is, when the microelement has a vertical structure, the corresponding barrier structure is similar to the structure of the microelement, as long as the barrier does not possess the light-emitting properties of the microelement.

[0031] Please refer to it again. Figure 1 The sacrificial adhesive layer 18 has a planar surface on the side facing away from the substrate 10. The micro-element 12 and the barrier 14 have the same height, and the surface of the sacrificial adhesive layer 18 facing away from the substrate 10 is flush with the surface of the micro-element 12 facing away from the substrate 10. This design allows the sacrificial adhesive layer 18 to contact the temporary substrate when the micro-element 12 and the barrier 14 are subsequently transferred to the temporary substrate, thereby improving the adhesion between the micro-element 12 and the temporary substrate and reducing the probability of positional displacement of the micro-element 12 during laser lift-off. Alternatively, in other embodiments, the sacrificial adhesive layer 18 can also cover the surface of the micro-element 12 facing away from the substrate 10 to improve the adhesion between the growth substrate 1 and the temporary substrate, reducing the probability of displacement of the micro-element 12 during laser lift-off from the substrate 10.

[0032] Furthermore, in this embodiment, the sacrificial adhesive layer 18 comprises a photosensitive adhesive, and the sacrificial adhesive layer 18 can be removed by laser ashing. The choice of material for the sacrificial adhesive layer 18 can reduce the difficulty of removing it. It should be noted that when removing the sacrificial adhesive layer 18 by laser ashing, the radiation energy of the laser can be greater than the fourth bandgap energy of the sacrificial adhesive layer 18.

[0033] Furthermore, in this embodiment, the growth substrate 1 provided by this application may also include a laser blocking layer, at least covering the sidewall of the barrier 14 facing the micro-device 12, for reflecting or absorbing laser light during laser ashing to remove the sacrificial adhesive layer 18. The introduction of this laser blocking layer can reduce the impact of laser energy on adjacent micro-devices 12 when selectively ashing the sacrificial adhesive layer 18 around a particular micro-device 12. Optionally, the laser blocking layer can be made of a laser-absorbing material, such as amorphous silicon, silicon nitride, silicon oxide, silicon oxynitride, etc.; this laser-absorbing material can absorb the laser energy incident on the laser blocking layer, weakening the laser energy and preventing it from passing through the laser blocking layer and incident on the photosensitive adhesive around the adjacent micro-devices 12. Alternatively, the laser blocking layer can be made of a laser reflective material, such as aluminum oxide, magnesium oxide, titanium dioxide, zinc oxide, etc. The laser reflective material can reflect the laser beam, preventing the laser beam from passing through the laser blocking layer and entering the photosensitive adhesive around the adjacent micro-element 12. At the same time, the reflected laser beam can return to the photosensitive adhesive around the current micro-element 12, which can further improve the ashing efficiency of the photosensitive adhesive around the current micro-element 12.

[0034] Please see Figure 6 , Figure 6 This is a flowchart illustrating one embodiment of the micro-element transfer method of this application. The transfer method includes:

[0035] S101: Provides growth substrate 1 and temporary substrate 2.

[0036] Specifically, in this embodiment, the structure of the growth substrate 1 can be the structure mentioned in any of the above embodiments.

[0037] Optionally, when the structure of the growth substrate 1 is as follows: Figure 1 As shown, the process of providing the growth substrate 1 may include: forming a first type of semiconductor layer on the substrate 10 by chemical vapor deposition. Figure 1 (not shown in the image), light-emitting layer ( Figure 1 (not shown in the image) and second type semiconductor layer ( Figure 1 (Not shown in the image); the area where the micro-element 12 and the barrier 14 are located is defined by etching or other methods; a first electrode 122 is formed on a first type semiconductor layer defined as the micro-element 12, and a second electrode 124 is formed on a second type semiconductor layer; at the same time, a third electrode 142 may also be formed in the area defined as the barrier 14 when the first electrode 122 or the second electrode 124 is formed.

[0038] Alternatively, when the structure of the growth substrate 1 is as follows: Figure 2As shown, the process of providing the growth substrate 1 may include: forming an adhesive layer 16 on the substrate 10, and forming a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer on the sapphire substrate by chemical vapor deposition; attaching the sapphire substrate to the adhesive layer 16; defining the area where the micro-element 12 and the barrier 14 are located by etching or other means; forming a first electrode 122 on the first type semiconductor layer defined as the micro-element 12, and forming a second electrode 124 on the second type semiconductor layer; at the same time, a third electrode 142 may also be formed in the area defined as the barrier 14 while forming the first electrode 122 or the second electrode 124.

[0039] Furthermore, such as Figure 1 As shown, when a sacrificial adhesive layer 18 is provided on the growth substrate 1, after forming the micro-element 12 and the barrier 14 in the above two embodiments, the method further includes: forming the sacrificial adhesive layer 18 on the first surface 100 of the substrate 10; optionally, the sacrificial adhesive layer 18 can cover the gap between the micro-element 12 and the barrier 14, and the surface of the sacrificial adhesive layer 18 facing away from the substrate 10 can be flush with the surface of the micro-element 12 facing away from the substrate 10. Alternatively, in other embodiments, the surface of the sacrificial adhesive layer 18 facing away from the substrate 10 can cover the surface of the micro-element 12 facing away from the substrate 10; and the thickness of the sacrificial adhesive layer 18 provided on the surface of the micro-element 12 facing away from the substrate 10 can be within a threshold range (e.g., 5 micrometers, etc.) to reduce the probability of the micro-element 12 shifting position when the sacrificial adhesive layer 18 is subsequently removed.

[0040] In addition, please see Figure 7a , Figure 7a This is a schematic diagram of one embodiment of a temporary substrate. The temporary substrate 2 may include a glass substrate 22 stacked together and a bonding adhesive layer 20 located on the surface of the glass substrate 22. The bonding adhesive layer 20 may be made of PDMS or the like. In this case, the step of providing the temporary substrate 2 in step S101 above includes: providing a temporary substrate 2 on which the bonding adhesive layer 20 is disposed. Specifically, adhesive liquid may be applied to the glass substrate 22, and the bonding adhesive layer 20 may be formed through a homogenization and baking process.

[0041] S102: The surface of the growth substrate 1 on which the micro-component 12 is disposed is placed opposite to and attached to the temporary substrate 2.

[0042] Specifically, please refer to Figure 7b , Figure 7b for Figure 6A schematic diagram of an embodiment corresponding to step S102 is shown. At this time, the bonding adhesive layer 20 can fix the relative positions of the growth substrate 1 and the temporary substrate 2. When a sacrificial adhesive layer 18 is provided on the substrate 10, and the sacrificial adhesive layer 18 is flush with the side of the micro-device 12 facing away from the substrate 10, or when the sacrificial adhesive layer 18 covers the surface of the micro-device 12 facing away from the substrate 10, step S102 includes: placing the surface of the sacrificial adhesive layer 18 facing away from the substrate 10 against the bonding adhesive layer 20 and bonding them together. Due to the introduction of the sacrificial adhesive layer 18, the bonding force between the growth substrate 1 and the temporary substrate 2 can be further increased.

[0043] S103: After the micro-device 12, the barrier 14 and the sacrificial adhesive layer 18 are separated from the substrate 10, the substrate 10 is removed.

[0044] Specifically, please refer to Figure 7c , Figure 7c for Figure 6 A schematic diagram of a structure corresponding to step S103. When the micro-element 12 and the barrier 14 are made of the same material facing the substrate 10, or, as... Figure 2 As shown, when an adhesive layer 16 is provided between the micro-element 12 and the barrier 14 and the substrate 10, a laser can be used to irradiate the entire surface of the substrate 10 away from the micro-element 12, so that all micro-element 12 and all barrier 14 detach from the substrate 10 simultaneously. Of course, in some cases, it may only be necessary to transfer some of the micro-element 12 on the substrate 10 to the temporary substrate 2. In this case, a laser can be used to irradiate a specific area of ​​the substrate 10 away from the micro-element 12, so that some of the micro-element 12 and the surrounding barrier 14 detach from the substrate 10.

[0045] In addition, it should be noted that when a sacrificial adhesive layer 18 is provided on the substrate 10, the adhesion force between the sacrificial adhesive layer 18 and the substrate 10 can be less than the adhesion force between the bonding adhesive layer 20 and the sacrificial adhesive layer 18 in contact with it, so that the resistance to removing the substrate 10 after laser irradiation is smaller.

[0046] S104: Selectively remove at least one micro-element 12 from the surrounding retaining wall 14.

[0047] Specifically, please refer to Figure 7d , Figure 7d for Figure 6A schematic diagram of an embodiment corresponding to step S104 is shown. The sacrificial adhesive layer 18 includes photosensitive adhesive, and the temporary substrate 2 is a transparent substrate. The specific implementation process of step S104 may include: selectively irradiating the temporary substrate 2 from the side away from the micro-device 12 with a laser, causing the irradiated sacrificial adhesive layer 18 to ashed. Optionally, in this embodiment, the laser may be an infrared laser or the like, and its wavelength may be different from the laser used to detach the substrate 10; the specific laser wavelength is determined by the material of the sacrificial adhesive layer 18. Generally, since the side of the micro-device 12 facing the bonding adhesive layer 20 includes a first electrode 122 and a second electrode 124, the sacrificial adhesive layer 18 fills the gap between the first electrode 122 and the second electrode 124. In this case, the method of selectively irradiating the micro-device 12 from the temporary substrate 2 not only causes the sacrificial adhesive layer 18 between the micro-device 12 and the barrier 14 to ashed, but also causes the sacrificial adhesive layer 18 on the side of the micro-device 12 facing the bonding adhesive layer 20 to ashed, thereby reducing the resistance when picking up the micro-device 12. Of course, in other embodiments, irradiation can also be performed from the side of the micro-element 12 away from the temporary substrate 2. In this case, although there may still be sacrificial adhesive layer 18 remaining on the side of the micro-element 12 facing the bonding adhesive layer 20, it is sufficient as long as the pulling force provided when picking up the micro-element 12 is large.

[0048] S105: Transfer the micro-element 12 with the surrounding sacrificial adhesive layer 18 removed.

[0049] Specifically, please refer to Figure 7e , Figure 7e for Figure 6 A schematic diagram of the structure of one embodiment corresponding to step S105. In this embodiment, an electrostatic adsorption device, a vacuum adsorption device, or the like can be used to transfer the micro-element 12.

[0050] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A method for transferring micro-components, characterized in that, include: Provide a growth substrate and a temporary substrate; The growth substrate includes a substrate, a sacrificial adhesive layer, and a plurality of micro-elements and a plurality of baffles spaced apart on a first surface of the substrate, wherein the baffles are disposed in the gaps between adjacent micro-elements; the sacrificial adhesive layer is located on the first surface and at least covers the sides of the micro-elements and the baffles, and is bonded to the micro-elements and the baffles respectively; The growth substrate having the micro-element on one side of the side surface of the growth substrate is positioned opposite and attached to the temporary substrate. This allows the micro-element, the barrier, and the sacrificial adhesive layer to detach from the substrate. Remove the substrate; Selectively remove the sacrificial adhesive layer between at least one of the micro-elements and the surrounding retaining wall; The micro-element with the surrounding sacrificial adhesive layer removed is transferred; The step of providing a temporary substrate includes: providing a temporary substrate having a bonding adhesive layer disposed thereon; The micro-element and the barrier are at the same height, and the surface of the sacrificial adhesive layer facing away from the substrate is flush with the surface of the micro-element facing away from the substrate, or the sacrificial adhesive layer covers the surface of the micro-element facing away from the substrate; the step of attaching the growth substrate with the surface of the micro-element facing away from the substrate to the temporary substrate includes: The surface of the sacrificial adhesive layer facing away from the substrate is positioned opposite and bonded to the bonding adhesive layer.

2. The transfer method according to claim 1, characterized in that, The sacrificial adhesive layer includes a photosensitive adhesive, the temporary substrate is a transparent substrate, and the step of selectively removing the sacrificial adhesive layer between at least one of the micro-elements and the surrounding barrier includes: The sacrificial adhesive layer is ashed by selectively irradiating the temporary substrate from the side away from the micro-element using a laser.

3. The transfer method according to claim 1, characterized in that, The retaining wall has a gap with the adjacent micro-element, and the retaining wall is arranged around the periphery of the micro-element.

4. The transfer method according to claim 3, characterized in that, The multiple retaining walls are interconnected to form multiple openings, and one of the micro-elements is disposed in each of the openings.

5. The transfer method according to claim 1, characterized in that, The material of the barrier is the same as that of at least a portion of the film layer in the micro-element.

6. The transfer method according to claim 5, characterized in that, In the direction away from the substrate, the micro-element includes a light-emitting layer group and a first electrode and a second electrode located on the light-emitting layer group; the barrier includes a first film layer group and a third electrode located on the first film layer group; wherein the first film layer group is made of the same material as the light-emitting layer group, and the third electrode is made of the same material as the first electrode or the second electrode.

7. The transfer method according to claim 1, characterized in that, The sacrificial adhesive layer includes a photosensitive adhesive, and the sacrificial adhesive layer can be removed by laser ashing.

8. The transfer method according to claim 7, characterized in that, Also includes: A laser blocking layer, at least covering the sidewall of the barrier facing the micro-element, is used to reflect or absorb the laser during laser ashing to remove the sacrificial adhesive layer.

9. The transfer method according to claim 1, characterized in that, The micro-element and the barrier are at the same height, and the surface of the sacrificial adhesive layer facing away from the substrate is flush with the surface of the micro-element facing away from the substrate, or the sacrificial adhesive layer covers the surface of the micro-element facing away from the substrate.

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