Flexible LED chip packaging structure and preparation method thereof

Abstract

The application relates to a flexible LED chip packaging structure and a preparation method thereof. The flexible LED chip packaging structure comprises a chip monomer and a multilayer first insulating film. The chip monomer comprises an epitaxial layer, a p electrode and an n electrode. The epitaxial layer comprises an n-type ohmic contact layer, an n-type layer, a quantum well layer, a p-type layer and a p-type ohmic contact layer arranged in sequence. The p electrode is arranged on the side of the p-type ohmic contact layer away from the p-type layer. The n electrode is arranged on the side of the n-type ohmic contact layer away from the n-type layer. The p electrode and the n electrode form a positive electrode and a negative electrode. The chip monomer is laminated with the first insulating film on both sides to seal the chip monomer. The first insulating film is provided with a perforation at the position opposite to the positive electrode and the negative electrode, so that the positive electrode and the negative electrode are exposed. The application forms a vertical packaging structure, so that the current distribution is uniform, and the generated heat is reduced. The chip is flexible by using the film packaging, the connection of the chip and a flexible circuit board is facilitated, and the light and thin chip is realized.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic device technology, and in particular to a flexible LED chip packaging structure and its fabrication method. Background Technology

[0002] Phototherapy as a treatment method can be traced back to 1903 when Danish scientist Finsen won the Nobel Prize in Physiology or Medicine for inventing ultraviolet phototherapy for treating skin diseases. However, due to limitations in the light source available at the time, phototherapy was difficult to meet treatment requirements and therefore did not gain widespread adoption. LED light sources, as a new generation of lighting products, have characteristics such as low energy consumption, power saving, long lifespan, small size, and fast response, and are increasingly being used in phototherapy devices.

[0003] Conventional LED brackets are made of materials such as PCT, PPA, and copper. Multiple pre-fabricated individual chips are mounted on the LED bracket and then packaged together. Therefore, the packaged LED chip as a whole is rigid. When the LED chip is connected to the flexible circuit board (FPC), it is a rigid-soft connection. Due to the lack of flexibility of the LED chip, the LED pads are easily peeled off under external force, making the LED light easily damaged. Summary of the Invention

[0004] To facilitate connection with flexible circuit boards and improve the durability of LED lights, this application provides a flexible LED chip packaging structure and its fabrication method.

[0005] This application provides a flexible LED chip packaging structure and its fabrication method, which adopts the following technical solution: In a first aspect, a flexible LED chip packaging structure includes: An epitaxial layer, the epitaxial layer comprising an n-type ohmic contact layer, an n-type layer, a quantum well layer, a p-type layer and a p-type ohmic contact layer stacked sequentially; The p-electrode is disposed on the side of the p-type ohmic contact layer opposite to the p-type layer. An n-electrode is disposed on the side of the n-type ohmic contact layer opposite to the n-type layer; the p-electrode and the n-electrode form a positive and a negative electrode, respectively; and... A multilayer first insulating film is provided, with the first insulating film laminated and covered on both sides of the epitaxial layer to seal the epitaxial layer. The first insulating film has through-holes to allow the positive and negative electrodes to be electrically connected to the outside.

[0006] By adopting the above technical solution, the p electrode and n electrode are located on both sides of the epitaxial layer, forming a vertical encapsulation structure. The current flows almost entirely vertically through the epitaxial layer, with no lateral current flow, resulting in uniform current distribution and reduced heat generation. Thin-film encapsulation makes the chip flexible, facilitating its connection with flexible circuit boards and reducing the phenomenon that LED chip pads are easily peeled off under external force due to insufficient flexibility of individual LED chips. At the same time, it achieves chip thinning.

[0007] Optionally, the p-electrode is arranged across its entire surface, covering the p-type ohmic contact layer.

[0008] By adopting the above technical solution, it is beneficial to the diffusion of current and can improve the current conduction efficiency.

[0009] Optionally, the p-electrode is a reflective conductive layer.

[0010] By adopting the above technical solution, the p electrode not only plays a role in conducting electricity, but also in reflecting light, so that light is reflected by the p electrode and emitted from the n electrode side, thereby improving the light extraction efficiency.

[0011] Optionally, a second insulating film is laminated on the side of the p electrode opposite to the p-type ohmic contact layer. The second insulating film covers the p electrode and has a clearance hole through it, so that the p electrode is partially exposed.

[0012] By adopting the above technical solution, the p electrode is covered by the second insulating film, which can avoid the phenomenon that short circuits are easily caused by the large exposed area of ​​the p electrode; at the same time, when the n electrode is formed on the n-type ohmic contact layer, the second insulating film can protect the p electrode.

[0013] Optionally, the material of the second insulating film is a PEN film or a PET film.

[0014] Optionally, the first insulating film is made of PEN film or PET film.

[0015] By adopting the above technical solutions, PET film exhibits good transparency and gloss; excellent airtightness; moderate moisture resistance; and superior mechanical properties. Its toughness is the best among all thermoplastics, with tensile strength and impact strength significantly higher than ordinary films. It also boasts good stiffness, dimensional stability, excellent heat and cold resistance, and good chemical and oil resistance. In addition to its excellent high strength, high modulus, and thermal resistance, PEN film also possesses excellent gas barrier properties, water resistance, and radioactivity resistance, effectively expanding the application range of PEN film.

[0016] Optionally, the p electrode is connected to the positive conductor.

[0017] By adopting the above technical solution, the setting of the positive conductor facilitates the electrical connection between the LED chip and the flexible circuit board.

[0018] Optionally, the n-electrode is connected to the negative conductor.

[0019] By adopting the above technical solution, the setting of the negative conductor facilitates the electrical connection between the LED chip and the flexible circuit board.

[0020] Optionally, multiple chip units are provided, and the multiple chip units are connected in series and / or in parallel to form a combined chip, with the first insulating film located on both sides of the combined chip.

[0021] By adopting the above technical solution, multiple individual chips can be packaged and protected simultaneously, thereby improving packaging efficiency.

[0022] Secondly, a method for fabricating a flexible LED chip packaging structure includes the following steps: S1 provides the growth substrate; S2 grows an epitaxial layer on the growth substrate, the epitaxial layer comprising a first ohmic contact layer, a first doped layer, a quantum well layer, a second doped layer and a second ohmic contact layer stacked sequentially; S3 fabricates a second electrode on the second ohmic contact layer; S4 peels off the growth substrate; S5 fabricates a first electrode on the first ohmic contact layer to form an integral semi-finished chip; S6 cuts the overall semi-finished chip to obtain LED chip units, and the first electrode and the second electrode form the positive and negative electrodes of the LED chip unit; S7 laminates and covers both sides of the LED chip unit with a first insulating film to seal the LED chip unit, and punches through the first insulating film to allow the positive and negative electrodes to be electrically connected to the outside.

[0023] By adopting the above technical solutions, a vertical packaging structure is formed, which makes the current distribution uniform and reduces the heat generated; by using thin-film packaging, the chip can be made flexible, which facilitates its connection with flexible circuit boards, and at the same time, the chip can be made thinner and lighter.

[0024] Optionally, in step S3, the positive electrode is arranged on the entire surface, covering the corresponding ohmic contact layer.

[0025] By adopting the above technical solution, it is beneficial to the diffusion of current and can improve the current conduction efficiency.

[0026] Optionally, in step S2, the first doped layer is an n-type layer, the second doped layer is a p-type layer, the second electrode in step S3 is a p-electrode, and the first electrode in step S5 is an n-electrode.

[0027] By adopting the above technical solution, an n-type layer is first grown on the growth substrate, followed by a p-type layer. After the epitaxial layer is grown, the p-type ohmic contact layer is located above the n-type ohmic contact layer. At this time, the production substrate serves as the base so that p electrodes can be further fabricated on the p-type ohmic contact layer. After the p electrodes are fabricated, the epitaxial layer needs to be flipped over, the growth substrate is peeled off, and the n electrodes are fabricated on the n-type ohmic contact layer. At this time, using the p electrodes arranged on the entire surface as the base can ensure the stability of the epitaxial layer.

[0028] Optionally, after step S3, a second insulating film is laminated onto the second ohmic contact layer, and a plurality of clearance holes penetrating the second insulating film are punched in the second insulating film to expose the second electrode partially.

[0029] By adopting the above technical solution, the p electrode is covered by the second insulating film, which can avoid the phenomenon that short circuits are easily caused by the large exposed area of ​​the p electrode; at the same time, when the n electrode is formed on the n-type ohmic contact layer, the second insulating film can protect the p electrode.

[0030] Optionally, the second electrode is a reflective conductive layer.

[0031] By adopting the above technical solution, the p electrode not only plays a role in conducting electricity, but also in reflecting light, so that light is reflected by the p electrode and emitted from the n electrode side, thereby improving the light extraction efficiency.

[0032] Optionally, in step S7, multiple individual chips are connected in series and / or in parallel to form a combined chip, and a first insulating film is laminated and covered on both sides of the combined chip to seal the combined chip.

[0033] By adopting the above technical solution, multiple individual chips can be packaged and protected simultaneously, thereby improving packaging efficiency.

[0034] In summary, this application includes at least one of the following beneficial technical effects: 1. Forming a vertical packaging structure results in uniform current distribution and reduced heat generation; thin-film packaging makes the chip flexible, facilitating its connection with flexible circuit boards, while also enabling the chip to be thinner and lighter.

[0035] 2. The p-electrode is arranged on a full surface, which is conducive to the diffusion of current and can improve the current conduction efficiency.

[0036] 3. The p electrode is a reflective conductive layer. In addition to its conductive function, the p electrode also reflects light, allowing light to be reflected by the p electrode and emitted from the n electrode side.

[0037] 4. Covering the p electrode with a second insulating film can prevent short circuits caused by the large exposed area of ​​the p electrode; at the same time, when the n electrode is formed on the n-type ohmic contact layer, the second insulating film can protect the p electrode. Attached Figure Description

[0038] Figure 1 This is a schematic diagram of the flexible LED chip packaging structure in Embodiment 1 of this application; Figure 2 This is a schematic diagram of the structure of the epitaxial layer grown on the growth substrate in Embodiment 1 of this application; Figure 3 This is a schematic diagram of the structure in Embodiment 1 of this application in which p-electrodes and n-electrodes are disposed on the epitaxial layer; Figure 4 This is a schematic diagram of the structure of a single chip unit in Embodiment 1 of this application; Figure 5 This is a schematic diagram of the flexible LED chip packaging structure in Embodiment 2 of this application; Figure 6 This is a schematic diagram of the structure in Embodiment 2 of this application in which p-electrodes and n-electrodes are disposed on the epitaxial layer; Figure 7 This is a schematic diagram of the flexible LED chip packaging structure in Embodiment 3 of this application; Figure 8 yes Figure 7 A magnified view of a portion of the image.

[0039] Explanation of reference numerals in the attached figures: 100, Chip unit; 1, Epitaxial layer; 11, n-type ohmic contact layer; 12, n-type layer; 13, Quantum well layer; 14, p-type layer; 15, p-type ohmic contact layer; 16, Buffer layer; 17, Sacrificial layer; 2, p-electrode; 3, n-electrode; 4, First insulating film; 5, Second insulating film; 51, Clearance hole; 6, Conductive silver paste; 7, Tin-plated copper strip; 200, Growth substrate; 300, Positive conductor; 400, Negative conductor. Detailed Implementation

[0040] The following is in conjunction with the appendix Figure 1-7 This application will be described in further detail.

[0041] This application discloses a flexible LED chip packaging structure.

[0042] Example 1 Reference Figure 1The flexible LED chip packaging structure includes a chip unit 100, which includes an epitaxial layer 1, a p electrode 2, an n electrode 3, and a multilayer first insulating film 4.

[0043] The epitaxial layer 1 includes an n-type ohmic contact layer 11, an n-type layer 12, a quantum well layer 13, a p-type layer 14, and a p-type ohmic contact layer 15 stacked sequentially.

[0044] The p-type layer 14 is a p-type semiconductor, in which trivalent p-type dopants, such as boron, aluminum, gallium, and indium, are doped into a pure silicon crystal to replace the positions of silicon atoms in the crystal lattice. The n-type layer 12 is an n-type semiconductor, in which pentavalent n-type dopants, such as silicon, phosphorus, and arsenic, are doped into a pure silicon crystal to replace the positions of silicon atoms in the crystal lattice.

[0045] The quantum well layer 13 has an n-type doped layer and a p-type doped layer on either side. The n-type layer 12, quantum well layer 13, and p-type layer 14 form a light-emitting structure. The p-type layer 14 and the n-type layer 12 are connected to form a pn junction. When current is applied, the p electrode 2 and the n electrode 3 form the positive and negative electrodes, respectively. When current flows through the wires onto the wafer, electrons are pushed into the p-region and recombine with holes in the p-region, emitting energy in the form of photons. The current passes through the light-emitting structure, causing the quantum well layer 13 to emit light. The quantum well layer 13 can be multi-layered. The color of the light emitted by the multi-layered quantum well layer 13 depends on the emission wavelength, which can be changed by altering the composition and structure of the materials constituting the multi-layered quantum well layer 13. For example, slightly increasing the indium concentration in the gallium indium nitride layer can shift the output wavelength of the light to a longer wavelength.

[0046] p-electrode 2 is disposed on the side of p-type ohmic contact layer 15 opposite to p-type layer 14, and p-electrode 2 is electrically connected to p-type layer 14 through p-type ohmic contact layer 15. n-electrode 3 is disposed on the side of n-type ohmic contact layer 11 opposite to n-type layer 12, and n-electrode 3 is electrically connected to n-type layer 12 through n-type ohmic contact layer 11. p-electrode 2 and n-electrode 3 are located on opposite sides of epitaxial layer 1, forming a vertical encapsulation structure. The current flows almost entirely vertically through epitaxial layer 1, with no lateral current flow, resulting in uniform current distribution and reduced heat generation.

[0047] A first insulating film 4 is laminated and covered on both sides of the epitaxial layer 1 to seal the epitaxial layer 1. The first insulating film 4 has through holes to connect the positive and negative electrodes to the outside world. By using thin film encapsulation, the chip can be made flexible, which facilitates its connection with flexible circuit boards, reduces the phenomenon that LED chip pads are easily peeled off under external force due to insufficient flexibility of the LED chip, and at the same time realizes the chip's thinness.

[0048] Furthermore, the first insulating film 4 is made of PEN film or PET film. PET film has good transparency and gloss; good airtightness; moderate moisture resistance; excellent mechanical properties; and its toughness is the best among all thermoplastics, with tensile strength and impact strength much higher than ordinary films. It also has good stiffness, dimensional stability, excellent heat and cold resistance, and good chemical and oil resistance. PEN film, in addition to its excellent high strength, high modulus, and thermal resistance, also possesses excellent gas barrier properties, water resistance, and radioactivity resistance, effectively expanding the application range of PEN film.

[0049] In an optional embodiment, the p-electrode 2 is connected to the positive conductor 300, and the n-electrode 3 is connected to the negative conductor 400. The positive conductor 300 and the negative conductor 400 can be, but are not limited to, conductive materials such as conductive silver paste 6 and tin-plated copper strip 7. In this embodiment, both the positive conductor 300 and the negative conductor 400 include conductive silver paste 6 and tin-plated copper strip 7. The perforations of the first insulating film 4 are filled with conductive silver paste 6, and the conductive silver paste 6 is connected to the tin-plated copper strip 7.

[0050] The arrangement of the positive conductor 300 and the negative conductor 400 facilitates the electrical connection between the LED chip 100 and the flexible circuit board.

[0051] Based on the above-described flexible LED chip packaging structure, this application provides a method for fabricating a flexible LED chip packaging structure, including the following steps: S1 provides a growth substrate 200, which can be a semiconductor substrate, such as a bulk semiconductor that may be doped (e.g., with p-type or n-type dopants) or undoped, a semiconductor-on-insulator (SOI) substrate, etc. The growth substrate 200 can be a wafer, such as a silicon wafer. In some embodiments, the semiconductor material of the growth substrate 200 may include silicon, germanium; compound semiconductors including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors including SiGe, GaAs, GaAsAl, GaAsP, GaN, InGaP, AlAs, InP, GaP, InGaN, and / or InAlN; or combinations thereof.

[0052] S2 grows an epitaxial layer 1 on the growth substrate 200. The epitaxial layer 1 includes a first ohmic contact layer, a first doped layer, a quantum well layer 13, a second doped layer, and a second ohmic contact layer stacked sequentially.

[0053] Specifically, an epitaxial layer 1 is grown on a growth substrate 200 using metal-organic chemical vapor deposition (MOCVD). Of the first and second doped layers, one is a p-type layer 14, and the other is an n-type layer 12. It can be understood that during the growth of epitaxial layer 1, the n-type layer 12 can be grown first on the growth substrate 200, followed by the p-type layer 14, or vice versa.

[0054] S3 fabricates a second electrode on the second ohmic contact layer, and the second electrode is electrically connected to the second doped layer through the second ohmic contact layer. Specifically, the second electrode can be deposited on the second ohmic contact layer using physical vapor deposition (PVD) or electroplating.

[0055] S4 peels off the growth substrate 200. Specifically, in order to facilitate the peeling off of the growth substrate 200, a buffer layer 16 and a sacrificial layer 17 are added between the growth substrate 200 and the epitaxial layer 1. After the growth of the epitaxial layer 1 is completed, the growth substrate 200, the buffer layer 16 and the sacrificial layer 17 can be removed by a selective wet etching process, or by a laser peeling method.

[0056] The sacrificial layer 17 can be a graphene sacrificial layer 17. The graphene sacrificial layer 17 and the nitride epitaxial layer 1 can form a molecular bond with weak bond energy at the interface. The chemical bond strength is much smaller than that of the covalent bond, thus providing a strong condition for the mechanical exfoliation of the nitride epitaxial layer 1.

[0057] S5 fabricates a first electrode on the first ohmic contact layer. The first electrode and the first doped layer are electrically connected through the first ohmic contact layer to form an integral semi-finished chip. Specifically, the first electrode can be deposited on the first ohmic contact layer using physical vapor deposition (PVD) or electroplating.

[0058] In an optional embodiment, refer to Figure 2 The first ohmic contact layer is an n-type ohmic contact layer 11, the first doped layer is an n-type layer 12, the second doped layer is a p-type layer 14, and the second ohmic contact layer is a p-type ohmic contact layer 15. (Refer to...) Figure 3 The second electrode is p electrode 2, and the first electrode is n electrode 3.

[0059] S6 reference Figure 4 The overall semi-finished chip is cut into LED chip units 100. Laser cutting can be used to cut the chips. The first electrode and the second electrode form the positive and negative electrodes of the LED chip unit 100.

[0060] S7 uses a laminator to laminate and cover the first insulating film 4 on both sides of the LED chip unit 100 to seal the LED chip unit 100 and encapsulate and protect the chip. A through hole is punched in the first insulating film 4 to expose the positive and negative electrodes. Laser drilling can be used.

[0061] Example 2 Reference Figure 5 The flexible LED chip packaging structure in this embodiment differs from that in Embodiment 1 in that the p-electrode 2 is arranged across the entire surface, covering the p-type ohmic contact layer 15, which facilitates current diffusion and improves current conduction efficiency. The p-electrode 2 is a reflective conductive layer, and can be Ag, Al, etc. In a specific embodiment, the p-electrode 2 is set with mirror silver. In addition to its conductive function, the p-electrode 2 also serves a reflective function, allowing light to be reflected by the p-electrode 2 and emitted from the n-electrode 3 side, thereby improving light extraction efficiency.

[0062] A second insulating film 5 is laminated on the side of the p-electrode 2 facing away from the p-type ohmic contact layer 15. The second insulating film 5 covers the p-electrode 2 and is made of PEN film or PET film. The second insulating film 5 has a through hole 51, which allows the p-electrode 2 to be partially exposed. By covering the p-electrode 2 with the second insulating film 5, the phenomenon that short circuits can easily occur due to the large exposed area of ​​the p-electrode 2 can be avoided. At the same time, when the n-electrode 3 is formed on the n-type ohmic contact layer 11, the second insulating film 5 can protect the p-electrode 2.

[0063] The difference between the fabrication method of the flexible LED chip packaging structure in this embodiment and that in Embodiment 1 is that, in step S2, the first ohmic contact layer is an n-type ohmic contact layer 11, the first doped layer is an n-type layer 12, the second doped layer is a p-type layer 14, and the second ohmic contact layer is a p-type ohmic contact layer 15; and in step S3, the second electrode is a p-electrode 2, which is the positive electrode and is arranged on the entire surface (refer to...). Figure 6 ), covering the second ohmic contact layer; the first electrode in step S5 is the n electrode 3.

[0064] An n-type layer 12 is first grown on the growth substrate 200, followed by a p-type layer 14. After the epitaxial layer 1 is grown, a p-type ohmic contact layer 15 is placed above the n-type ohmic contact layer 11. At this point, the growth substrate 200 serves as the base for further fabrication of the p-electrode 2 on the p-type ohmic contact layer 15. After the p-electrode 2 is fabricated, the epitaxial layer 1 needs to be flipped over, the growth substrate 200 is peeled off, and an n-electrode 3 is fabricated on the n-type ohmic contact layer 11. Using the p-electrode 2, which is arranged across the entire surface, as the base ensures the stability of the epitaxial layer 1. Since one side of the n-type layer 12 in the light-emitting structure is the light-emitting surface, the n-electrode 3 partially covers the n-type ohmic contact layer 11 to avoid blocking the light emission.

[0065] Further, after step S3, a second insulating film 5 is laminated onto the second ohmic contact layer. Multiple clearance holes 51 are punched through the second insulating film 5 to partially expose the p electrode 2. When the n electrode 3 is formed on the n-type ohmic contact layer 11, the second insulating film 5 can protect the p electrode 2. The clearance holes 51 of the second insulating film 5 and the perforations of the first insulating film 4 are filled with conductive silver paste 6, which is connected to the tin-plated copper strip 7.

[0066] Example 3 Reference Figure 7 and Figure 8 The flexible LED chip packaging structure in this embodiment differs from that in Embodiment 2 in that it comprises multiple chip units 100, which are connected in series and / or parallel to form a combined chip. In other embodiments, they can be connected using conductive materials such as conductive silver paste or tin-plated copper strip. To avoid excessive conductive materials within the combined chip affecting the reliability of the electrical connection, in this embodiment, in the two electrically connected chip units 100, the n-electrode 3 of one chip unit 100 is inserted into the clearance hole 51 of the other chip unit 100 and electrically connected to the p-electrode 2 of the other chip unit 100. The clearance hole 51 is filled with conductive silver paste 6. After the multiple chip units 100 are connected, a first insulating film 4 is laminated onto both sides of the combined chip using a laminator to encapsulate and protect the combined chip.

[0067] The difference between the preparation method of the flexible LED chip packaging structure in this embodiment and that in embodiment 2 is that, in step S7, multiple chip units 100 are connected in series and / or in parallel to form a combined chip, and the first insulating film 4 is laminated and covered on both sides of the combined chip to seal the combined chip.

[0068] The above are all preferred embodiments of this application, and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. A flexible LED chip packaging structure, characterized in that, include: A chip unit (100) is a substrate-free vertical structure with a stripped growth substrate, without retaining a semiconductor growth substrate; the chip unit (100) includes an epitaxial layer (1), a p-electrode (2), and an n-electrode (3); the epitaxial layer (1) includes an n-type ohmic contact layer (11), an n-type layer (12), a quantum well layer (13), a p-type layer (14), and a p-type ohmic contact layer (15) stacked sequentially; the p-electrode (2) is disposed on the side of the p-type ohmic contact layer (15) opposite to the p-type layer (14); the n-electrode (3) is disposed on the side of the n-type ohmic contact layer (11) opposite to the n-type layer (12), and the p-electrode (2) and the n-electrode (3) form a positive electrode and a negative electrode; and, The first insulating film (4) is laminated on both sides of the chip unit (100) to seal the chip unit (100). The first insulating film (4) has through holes for the positive and negative electrodes to be electrically connected to the outside.

2. The flexible LED chip packaging structure according to claim 1, characterized in that, The p electrode (2) is arranged on the entire surface, covering the p-type ohmic contact layer (15).

3. The flexible LED chip packaging structure according to claim 2, characterized in that, The p electrode (2) is a reflective conductive layer.

4. The flexible LED chip packaging structure according to claim 2, characterized in that, The p electrode (2) has a second insulating film (5) laminated on the side opposite to the p-type ohmic contact layer (15). The second insulating film (5) covers the p electrode (2) and has a clearance hole (51) through it, so that the p electrode (2) is partially exposed.

5. The flexible LED chip packaging structure according to claim 4, characterized in that, The material of the second insulating film (5) is a PEN film or a PET film.

6. The flexible LED chip packaging structure according to any one of claims 1 to 5, characterized in that, The first insulating film (4) is made of PEN film or PET film; and / or, the p electrode (2) is connected to the positive conductor (300); and / or, the n electrode (3) is connected to the negative conductor (400); and / or, multiple chip units (100) are provided, and multiple chip units (100) are connected in series and / or in parallel to form a combined chip, and the first insulating film (4) is located on both sides of the combined chip.

7. A method for fabricating a flexible LED chip packaging structure, characterized in that, Includes the following steps: S1 provides a growth substrate (200); S2 grows an epitaxial layer (1) on the growth substrate (200). The epitaxial layer (1) includes a first ohmic contact layer, a first doped layer, a quantum well layer (13), a second doped layer, and a second ohmic contact layer stacked sequentially. S3 fabricates a second electrode on the second ohmic contact layer; S4 peels off the growth substrate (200). S5 fabricates a first electrode on the first ohmic contact layer to form an integral semi-finished chip; S6 cuts the overall semi-finished chip to obtain LED chip unit (100), and the first electrode and the second electrode form the positive and negative electrodes of the LED chip unit (100); S7 laminates and covers the first insulating film (4) on both sides of the LED chip unit (100) to seal the LED chip unit (100), and punches through the first insulating film (4) to allow the positive and negative electrodes to be electrically connected to the outside.

8. The method for preparing the flexible LED chip packaging structure according to claim 7, characterized in that, In step S3, the positive electrode is arranged on the entire surface, covering the corresponding ohmic contact layer.

9. The method for preparing the flexible LED chip packaging structure according to claim 8, characterized in that, In step S2, the first doped layer is an n-type layer (12), the second doped layer is a p-type layer (14), the second electrode in step S3 is a p-electrode (2), and the first electrode in step S5 is an n-electrode (3).

10. The method for preparing the flexible LED chip packaging structure according to claim 9, characterized in that, After step S3, a second insulating film (5) is laminated onto the second ohmic contact layer, and multiple clearance holes (51) are punched through the second insulating film (5) to partially expose the second electrode; and / or, The second electrode is a reflective conductive layer; and / or, In step S7, multiple chip units (100) are connected in series and / or in parallel to form a combined chip, and a first insulating film (4) is laminated and covered on both sides of the combined chip to seal the combined chip.

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