Metal mask for deposition

Abstract

A metal mask for deposition is provided, which includes a deposition region including an effective portion and an ineffective portion, and a non-deposition region, the effective portion including a plurality of through-holes, the through-holes including: a small surface hole on one surface; a large surface hole on the other surface opposite to the one surface; and a communication portion in which an inner surface of the small surface hole and an inner surface of the large surface hole intersect, an island portion being provided between the plurality of large surface holes, a height from the communication portion to the one surface being 3 μm or less, the small surface hole having a hole diameter (W1) in a horizontal direction on one surface thereof, the through-hole having a width (W2) in at least one of a horizontal direction, a vertical direction, and a diagonal direction on the communication portion, the hole diameter being larger than the width of the through-hole, a difference between the hole diameter and the width of the through-hole being 0.01 μm to 1.1 μm, and an inclination angle (θ1) of one end of the small surface hole with respect to the one surface and one end of the communication portion being 70 degrees to 89 degrees.

Description

[0001] This application is a divisional application of Chinese patent application filed on August 24, 2018, with international application number PCT / KR2018 / 009813, entitled "Deposition mask for depositing metal material for OLED pixels and manufacturing method thereof", and Chinese national phase application number 201880070153.X. Technical Field

[0002] The embodiments relate to deposition masks for depositing metallic materials for organic light-emitting diode (OLED) pixels and methods for manufacturing the same. Specifically, the deposition mask according to the embodiments is used to manufacture OLED panels with a high resolution of 500 PPI or higher. Background Technology

[0003] Due to the need for display devices with high resolution and low power consumption, various display devices have been developed, such as liquid crystal displays and electroluminescent displays.

[0004] Compared to liquid crystal displays, electroluminescent displays have become the focus of next-generation display devices due to their superior characteristics such as low light emission, low power consumption, and high resolution.

[0005] Electric field display devices include organic light-emitting display devices and inorganic light-emitting display devices. That is, based on the material of the light-emitting layer, electric field display devices can be classified into organic light-emitting display devices and inorganic light-emitting display devices.

[0006] Organic light-emitting display devices have attracted attention because they offer wide viewing angles, fast response times, and require low power consumption.

[0007] The organic material constituting such a light-emitting layer can be formed into a pattern that is used to form pixels on a substrate by a fine metal masking method.

[0008] In this case, the fine metal mask used for deposition can have through holes corresponding to the pattern to be formed on the substrate, and the red (R), green (G) and blue (B) patterns forming pixels can be formed by depositing organic material after aligning the fine metal mask on the substrate.

[0009] Recently, various electronic devices, such as virtual reality (VR) devices, require ultra-high definition (UHD) display devices. Therefore, there is a need for fine metal masks with fine-sized through-holes capable of forming ultra-high resolution (UHD-level) patterns.

[0010] Multiple through-holes can be formed on a metal plate that can be used as a deposition mask by etching.

[0011] In this case, when the curvature of the small surface holes in the via and the tilt angle of the small surface holes are less than a predetermined range, the deposited material diffuses, and thus deposition failure may occur due to the overlap between pixels.

[0012] Therefore, there is a need for deposition masks and their manufacturing methods with new structures capable of uniformly forming high-resolution or ultra-high-resolution (UHD) patterns of 500 PPI or higher without deposition failure. Summary of the Invention

[0013] Technical issues

[0014] The embodiments relate to providing a deposition mask and a method for manufacturing the same, capable of uniformly forming patterns with a high resolution of about 500 PPI or higher or an ultra-high resolution (UHD) of about 800 PPI or higher without deposition failure.

[0015] Technical solution

[0016] In a deposition mask for depositing a metallic material for depositing OLED pixels according to an embodiment, the deposition mask includes: a deposition region for forming a deposition pattern and a non-deposition region other than the deposition region, wherein the deposition region includes a plurality of effective portions spaced apart in a longitudinal direction and ineffective portions other than the effective portions, wherein the effective portions include: a plurality of small surface holes formed on one surface; a plurality of large surface holes formed on another surface opposite to the one surface; through-holes connecting the small surface holes and the large surface holes; and island-like portions between the plurality of through-holes, wherein the deposition mask has a resolution of 500 PPI or higher, wherein the diameter of the through-holes is 33 μm or less, and the distance between the through-holes is 48 μm or less, the tilt angle of the small surface holes relative to the one surface is 70 degrees to 89 degrees, and the tilt radius of curvature of the small surface holes relative to the one surface is 3 μm to 86 μm.

[0017] Fabricating a deposition mask for depositing metal material for OLED pixels according to an embodiment includes: a first step of preparing a substrate metal plate with a thickness of 20 μm to 30 μm; a second step of forming a patterned photoresist layer on one side of the substrate metal plate, forming a groove on one surface of the substrate metal plate by half-etching the opening portion of the photoresist layer, forming a patterned photoresist layer on another surface of the substrate metal plate opposite to the one surface, and forming a through-hole connected to the groove on one surface of the substrate metal plate by etching the opening portion of the photoresist layer; and a third step of removing the photoresist layer to form a deposition mask, the deposition mask including a large surface hole formed on one surface, a small surface hole formed on the other surface opposite to the one surface, and a through-hole formed by a connecting portion connected to the boundary between the large surface hole and the small surface hole.

[0018] According to an embodiment, a metal mask for deposition is provided, comprising a deposition region and a non-deposition region including an effective portion and an ineffective portion. The effective portion includes a plurality of through-holes, each through-hole comprising: a small surface hole on one surface; a large surface hole on another surface opposite to the one surface; and a connecting portion in which the inner surfaces of the small surface holes and the inner surfaces of the large surface holes intersect. Island-shaped portions are provided between the plurality of large surface holes. The height from the connecting portion to the one surface is 3 μm or less. The small surface holes have a diameter (W1) in a horizontal direction on one surface. The through-holes have a width (W2) in at least one of the horizontal, vertical, and diagonal directions on the connecting portion. The diameter is larger than the width of the through-hole. The difference between the diameter and the width of the through-hole is 0.01 μm to 1.1 μm. The tilt angle (θ1) connecting one end of the small surface hole relative to one end of the one surface and one end of the connecting portion is 70 degrees to 89 degrees.

[0019] According to an embodiment, a metal mask for deposition is also provided, the metal mask comprising: a deposition region and a non-deposition region, wherein the deposition region includes an effective portion and an ineffective portion, wherein the effective portion includes a plurality of vias, wherein the vias include: small surface holes on one surface; large surface holes on another surface opposite to one surface; and a connecting portion in which the inner surfaces of the small surface holes and the inner surfaces of the large surface holes intersect, wherein island-shaped portions are provided between the plurality of large surface holes, wherein the height from the connecting portion to one surface is 3 μm or less, wherein the small surface holes have a diameter (W1) in a horizontal direction on one surface, wherein the vias have a width (W2) in the connecting portion in at least one of a horizontal direction, a vertical direction, and a diagonal direction, wherein the diameter (W1) is larger than the width (W2) of the via, and wherein the difference between the diameter (W1) and the width (W2) of the via is 0.01 μm to 1.1 μm, and wherein the radius of curvature of the inner surface of the small surface hole relative to one surface is 3 μm to 86 μm.

[0020] According to an embodiment, a metal mask for deposition is also provided, the metal mask comprising: a deposition region and a non-deposition region, wherein the deposition region includes an effective portion and an ineffective portion, wherein the effective portion includes a plurality of through holes, wherein the through holes include: small surface holes on one surface; large surface holes on another surface opposite to one surface; and a connecting portion in which the inner surfaces of the small surface holes and the inner surfaces of the large surface holes intersect, wherein island-shaped portions are provided between the plurality of large surface holes, wherein the tilt angle (θ1) of the connection between the small surface holes and one end of the connecting portion relative to one surface is 70 degrees to 89 degrees, and wherein the tilt radius of curvature of the inner surface of the small surface holes relative to the one surface is 3 μm to 86 μm.

[0021] Beneficial effects

[0022] The implementation relates to a deposition mask for depositing metallic materials with OLED pixels having a resolution of 500 PPI or higher, and provides a deposition mask that can minimize deposition failure.

[0023] In the deposition mask according to the embodiment, the curvature of the small surface aperture can be from 3 μm to 86 μm, and the tilt angle between one end of the small surface aperture and one end of the connecting portion between the small surface aperture and the large surface aperture can be from 70 degrees to 89 degrees. Therefore, the diffusion of the deposition pattern deposited through the deposition mask according to the embodiment can be minimized. Thus, the deposition mask according to the embodiment can prevent deposition failure due to the shadowing effect of two adjacent deposition patterns in the R, G, and B patterns while maintaining ultra-high resolution.

[0024] In addition, by preventing organic materials from detaching during the deposition process, the processing efficiency of organic light-emitting display devices can be improved. Attached Figure Description

[0025] Figures 1 to 3 This is a conceptual diagram illustrating the process of depositing organic materials on a substrate using a deposition mask according to an embodiment.

[0026] Figure 4 This is a plan view showing the deposition mask according to an embodiment.

[0027] Figure 5 This is a plan view showing the effective portion of the deposition mask.

[0028] Figure 6 It is one of them Figure 5 The view that overlaps with the sectional view taken along line A-A' and the sectional view taken along line B-B'.

[0029] Figure 7 This is a view showing another plan view of the deposition mask according to an embodiment.

[0030] Figure 8 It is the deposition mask along the implementation method Figure 5 The sectional view taken by line B-B' in the figure.

[0031] Figure 9 It is based on the deposition mask of the comparative example in the context of... Figure 8 Sectional views in the same direction.

[0032] Figure 10 This is a view showing the manufacturing process of a deposition mask according to an example.

[0033] Figure 11 This is a view showing the manufacturing process of the deposition mask according to the comparative example.

[0034] Figure 12 and Figure 13 This is a view showing the deposition pattern formed by a deposition mask according to the example.

[0035] Figure 14 and Figure 15 This is a view showing the deposition pattern formed by a deposition mask according to a comparative example. Detailed Implementation

[0036] In the following description, embodiments will be described in detail with reference to the accompanying drawings. However, the spirit and scope of the invention are not limited to the portion of the described embodiments, and it can be implemented in various other forms. Furthermore, within the spirit and scope of the invention, one or more elements of the embodiments can be selectively combined and substituted.

[0037] Furthermore, unless explicitly defined and described otherwise, the terms (including technical and scientific terms) used in the embodiments of this invention may be interpreted as having the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains, and terms such as those defined in common dictionaries may be interpreted as having a meaning consistent with their meaning in the context of the relevant art.

[0038] Furthermore, the terminology used in the embodiments of the present invention is for describing embodiments and is not intended to limit the invention. In this specification, unless specifically stated in the phrase, the singular form may also include the plural form, and when described as “at least one (or more) of A (and), B and C”, it may include at least one of all combinations that can be combined among A, B and C.

[0039] Furthermore, when describing the elements of embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are used only to distinguish elements from other elements, and the terms are not limited to the nature, order, or sequence of the elements.

[0040] In addition, when an element is described as “connected,” “coupled,” or “linked” to another element, it can include not only cases where the element is directly “connected,” “coupled,” or “linked” to another element, but also cases where the element is “connected,” “coupled,” or “linked” to another element via another element.

[0041] Furthermore, when described as being formed or set “above” or “below” each element, “above” or “below” can include not only cases where two elements are directly connected to each other, but also cases where one or more other elements are formed or set between two elements.

[0042] Furthermore, when expressed as "above" or "below", a single element can include not only the direction above but also the direction below.

[0043] Reference Figures 1 to 3 This describes the process of depositing organic materials on a substrate using a deposition mask according to an embodiment.

[0044] Figure 1 This is a perspective view showing an organic material deposition apparatus including a deposition mask 100 according to an embodiment.

[0045] An organic material deposition apparatus may include a deposition mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

[0046] The deposition mask 100 may include a plurality of vias TH in the effective portion for deposition. The deposition mask 100 may be a substrate for a deposition mask including the plurality of vias TH. In this case, vias may be formed to correspond to a pattern to be formed on the substrate. In addition to the effective portion including the deposition area, the deposition mask 100 may include ineffective portions.

[0047] The mask frame 200 may include an opening 205. Multiple through-holes of the deposition mask 100 may be provided in areas corresponding to the openings 205. Therefore, organic material supplied to the organic material deposition container 400 can be deposited onto the substrate 300. The deposition mask can be mounted and secured to the mask frame 200. For example, the deposition mask can be pulled and secured to the mask frame 200 by welding.

[0048] Reference Figure 1 and Figure 2 The deposition mask 100 can be pulled in opposite directions at one end located on the outermost side of the deposition mask 100. In the deposition mask 100, one end of the deposition mask 100 and the opposite end can be pulled in opposite directions along the longitudinal direction of the deposition mask 100. One end and the other end of the deposition mask 100 can face each other and be arranged parallel to each other. One end of the deposition mask 100 can be one of the four side surfaces formed on the outermost side of the deposition mask 100. For example, the deposition mask 100 can be pulled with a tension of 0.4 kgf to 1.5 kgf. Therefore, the pulled deposition mask 100 can be mounted on the mask frame 200.

[0049] The deposition mask 100 can then be fixed to the mask frame 200 by welding the invalid parts of the deposition mask 100. Subsequently, the portion of the deposition mask 100 disposed outside the mask frame 200 can be removed by methods such as cutting.

[0050] Reference Figure 1 and Figure 3 The substrate 300 can be a substrate used to manufacture a display device. Patterns of red (R), green (G), and blue (B) can be formed on the substrate 300 to form pixels of the three primary colors of light.

[0051] The organic material deposition container 400 can be a crucible. The organic material can be placed inside the crucible.

[0052] When a heat source and / or current is supplied to the crucible in the vacuum chamber 500, organic materials can be deposited on the substrate 100.

[0053] Figure 3 This is a view showing multiple deposition patterns formed on a substrate 300 through multiple through-holes of a deposition mask 100.

[0054] The deposition mask 100 may include a first surface 101 and a second surface 102 facing the first surface.

[0055] The first surface 101 of the deposition mask 100 may include a small surface aperture V1, and the second surface 102 of the deposition mask 100 may include a large surface aperture V2. The vias may be connected by a connecting portion CA that connects to the boundary between the small surface aperture V1 and the large surface aperture V2.

[0056] The deposition mask 100 may include a first etched surface ES1 in a small surface aperture V1. The deposition mask 100 may include a second etched surface ES2 in a large surface aperture V2. A through-hole can be formed by connecting the first etched surface ES1 in the small surface aperture V1 with the second etched surface ES2 in the large surface aperture V2. For example, the first etched surface ES1 in a small surface aperture V1 can be connected with the second etched surface ES2 in a large surface aperture V2 to form a through-hole.

[0057] The width of the large surface hole V2 can be greater than the width of the small surface hole V1. In this case, the width of the small surface hole V1 can be measured at the first surface 101, and the width of the large surface hole V2 can be measured at the second surface 102.

[0058] The small surface hole V1 can be configured to face the substrate 300. The small surface hole V1 can be configured to be close to the substrate 300. Therefore, the small surface hole V1 can have a shape corresponding to the deposited material, i.e., a deposition pattern DP.

[0059] The large surface aperture V2 can be configured to face the organic material deposition container 400. Therefore, the large surface aperture V2 can accommodate organic material supplied from the organic material deposition container 400 over a wide area, and fine patterns can be rapidly formed on the substrate 300 through the small surface aperture V1, which has a width smaller than that of the large surface aperture V2.

[0060] Figure 4 This is a plan view showing the deposition mask according to an embodiment. (Refer to...) Figure 4 The deposition mask according to the embodiment may include a deposition region DA and a non-deposition region NDA.

[0061] The deposition region DA can be a region used to form a deposition pattern. A deposition mask can include multiple deposition regions DA. For example, the deposition region DA in an embodiment can include multiple effective portions AA1, AA2, and AA3 capable of forming multiple deposition patterns.

[0062] Multiple effective portions may include a first effective portion AA1, a second effective portion AA2, and a third effective portion AA3. A depositional region DA may be any one of the first effective portion AA1, the second effective portion AA2, and the third effective portion AA3.

[0063] In the case of small-sized display devices such as smartphones, an effective portion of any one of the multiple deposition regions included in the deposition mask can be an area for forming a display device. Therefore, a deposition mask can include multiple effective portions to simultaneously form multiple display devices. Thus, the deposition mask according to the embodiment can improve processing efficiency.

[0064] Alternatively, in the case of large-size display devices such as televisions, multiple effective portions included in a deposition mask may be part of forming a display device. In this case, the multiple effective portions can be used to prevent deformation due to loads on the mask.

[0065] The deposition region DA may include multiple isolation regions IA1 and IA2, which are contained within a deposition mask. Isolation regions IA1 and IA2 may be positioned between adjacent effective portions. Isolation regions IA1 and IA2 may also be spacers between multiple effective portions. For example, a first isolation region IA1 may be positioned between a first effective portion AA1 and a second effective portion AA2. Similarly, a second isolation region IA2 may be positioned between a second effective portion AA2 and a third effective portion AA3. The isolation regions distinguish adjacent effective regions, and multiple effective portions may be supported by a single deposition mask.

[0066] A deposition mask may include non-deposition regions NDA on both sides of the deposition region DA in the longitudinal direction. According to an embodiment, a deposition mask may include non-deposition regions NDA on both sides of the deposition region DA in the horizontal direction.

[0067] The non-deposition region NDA of the deposition mask may be a region not involved in deposition. The non-deposition region NDA may include frame fixing regions FA1 and FA2 for securing the deposition mask to the mask frame. For example, the non-deposition region NDA of the deposition mask may include a first frame fixing region FA1 on one side of the deposition region DA, and a second frame fixing region FA2 on the opposite side of the deposition region DA. The first frame fixing region FA1 and the second frame fixing region FA2 may be regions fixed to the mask frame by welding.

[0068] The non-deposition region NDA may include half-etched portions HF1 and HF2. For example, the non-deposition region NDA of the deposition mask may include a first half-etched portion HF1 on one side of the deposition region DA, and a second half-etched portion HF2 on the opposite side of the deposition region DA. The first half-etched portion HF1 and the second half-etched portion HF2 may be regions in which grooves are formed in the depth direction of the deposition mask. The first half-etched portion HF1 and the second half-etched portion HF2 may have grooves having approximately half the thickness of the deposition mask, thereby dispersing stress when the deposition mask is pulled.

[0069] When forming small or large surface holes, a semi-etched portion can be formed simultaneously. Therefore, processing efficiency can be improved.

[0070] A surface treatment layer of a different material than the metal substrate can be formed in the deposition region DA of the deposition mask, and no surface treatment layer can be formed in the non-deposition region NDA. Alternatively, a surface treatment layer of a different material than the metal substrate can be formed on only one surface of the deposition mask or on the opposite surface. Alternatively, a surface treatment layer of a different material than the metal substrate can be formed on only a portion of one surface of the deposition mask. For example, one and / or another surface of the deposition mask, and the entirety and / or portion of the deposition mask, may include a surface treatment layer having a lower etch rate than the material of the metal substrate, thereby improving the etch factor. Therefore, the deposition mask of the embodiment can efficiently form vias with fine dimensions. As an example, the deposition mask of the embodiment can efficiently form deposition patterns with a high resolution of 500 PPI or higher. Here, the surface treatment layer may include a material different from the material of the metal substrate, or may include a metallic material with different compositions having the same elements.

[0071] A semi-etched portion can be formed in the ineffective portion UA ​​of the deposition region DA. The semi-etched portions can be dispersed throughout or in part of the ineffective portion UA ​​to form multiple portions, in order to distribute the stress when the deposition mask is pulled.

[0072] Additionally, semi-etched portions can be formed in the frame fixing region and / or the peripheral region of the frame fixing region. Therefore, the stress on the deposition mask generated during deposition of material after fixing the deposition mask to the mask frame and / or fixing the deposition mask to the mask frame can be uniformly distributed. Thus, the deposition mask can be maintained with uniform vias.

[0073] Frame fixing regions FA1 and FA2 for fixing to the non-deposited region NDA can be disposed between the half-etched portions HF1 and HF2 of the non-deposited region NDA and the effective portions of the deposited region DA adjacent to the half-etched portions HF1 and HF2. For example, the first frame fixing region FA1 can be disposed between the first half-etched portion HF1 of the non-deposited region NDA and the first effective portion AA1 of the deposited region DA adjacent to the first half-etched portion HF1. ​​For example, the second frame fixing region FA2 can be disposed between the second half-etched portion HF2 of the non-deposited region NDA and the third effective portion AA3 of the deposited region DA adjacent to the second half-etched portion HF2. Therefore, multiple deposited pattern portions can be fixed simultaneously.

[0074] The deposition mask may include semi-circular openings at both ends in the horizontal direction X. The non-deposition area NDA of the deposition mask may include a semi-circular opening at each of the two ends in the horizontal direction. For example, the non-deposition area NDA of the deposition mask may include an opening whose center in the vertical direction Y opens on one side of the horizontal direction. For example, the non-deposition area NDA of the deposition mask may include an opening whose center in the vertical direction opens on the opposite side of the horizontal direction. That is, the two ends of the deposition mask may include openings at half the length in the vertical direction. For example, the two ends of the deposition mask may be shaped like horseshoes.

[0075] The semi-etched portions included in the deposition mask of the embodiment can be formed in various shapes. The semi-etched portions may include semi-circular groove portions. The grooves may be formed on at least one surface of the deposition mask and another surface opposite to that surface. Preferably, the semi-etched portions may be formed on the surface corresponding to the small surface apertures (the surface side to be deposited). Therefore, the semi-etched portions can be formed simultaneously with the small surface apertures, thereby improving processing efficiency. Additionally, the semi-etched portions can disperse stress that may be generated due to the size difference between large surface apertures.

[0076] Alternatively, half-etched portions can be formed on both sides of the deposition mask to disperse stress on the deposition mask. In this case, the half-etched area of ​​the half-etched portion can be widened in the plane corresponding to the first surface aperture (the surface side to be deposited). That is, the deposition mask according to the embodiment may include half-etched portions due to grooves formed on the first surface and the second surface of the deposition mask, respectively. Specifically, the depth of the groove of the half-etched portion formed on the first surface can be greater than the depth of the groove of the half-etched portion formed on the second surface. Therefore, the half-etched portions can disperse stress that may occur due to the size difference between the small surface aperture and the large surface aperture. The formation of the small surface aperture, the large surface aperture, and the half-etched portions can make the surface areas on the first surface and the second surface of the deposition mask similar to each other, thereby preventing via displacement.

[0077] Furthermore, the grooves formed on the first and second surfaces can be offset from each other. Therefore, the half-etched portion does not need to penetrate.

[0078] The semi-etched portion may include a curved surface and a flat surface. The flat surface of the first semi-etched portion HF1 may be configured to be adjacent to the first effective region AA1, and this flat surface may be configured horizontally with one end in the longitudinal direction of the deposition mask. The curved surface of the first semi-etched portion HF1 may have a convex shape toward one end in the longitudinal direction of the deposition mask. For example, the curved surface of the first semi-etched portion HF1 may be formed such that half of its length in the vertical direction of the deposition mask corresponds to the radius of a semicircle.

[0079] The flat surface of the second half-etched portion HF2 can be configured to be adjacent to the third effective region AA3, and this flat surface can be configured horizontally with one end in the longitudinal direction of the deposition mask. The curved surface of the second half-etched portion HF2 can have a convex shape facing the other end in the longitudinal direction of the deposition mask. For example, the curved surface of the second half-etched portion HF2 can be formed such that 1 / 2 of its length in the vertical direction of the deposition mask corresponds to the radius of a semicircle.

[0080] Meanwhile, the curved surfaces of the openings at both ends of the deposition mask can point towards the half-etched portions. Therefore, the openings at both ends of the deposition mask can have the shortest separation distance at the point where the first half-etched portion or the second half-etched portion and the vertical length of the deposition mask are at 1 / 2.

[0081] Although not shown in the accompanying drawings, the semi-etched portions can have a quadrilateral shape. The first semi-etched portion HF1 and the second semi-etched portion HF2 can have a rectangular or square shape.

[0082] The deposition mask according to an embodiment may include multiple half-etched portions. The deposition mask according to an embodiment may include multiple half-etched portions in at least one of a deposition region DA and a non-deposition region NDA. The deposition mask according to an embodiment may include half-etched portions only in the invalid portion UA. The invalid portion UA ​​may be a region other than the valid portion AA.

[0083] The deposition mask according to an embodiment may include two half-etched portions. Although not shown in the figures, the deposition mask according to an embodiment may include four half-etched portions. For example, the half-etched portions may include an even number of half-etched portions, thereby effectively dispersing stress. The deposition mask according to an embodiment may be disposed only in the non-deposition region NDA.

[0084] Preferably, the semi-etched portion is formed symmetrically with respect to the center of the mask in the X-axis direction or in the Y-axis direction. This ensures that the tension in both directions is equal.

[0085] The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 can correspond to the vertical length d2 of the opening portion. Therefore, when the deposition mask is pulled, stress can be uniformly distributed, reducing the deformation (wave deformation) of the deposition mask. Thus, the deposition mask according to the embodiment can have uniform vias, improving the pattern deposition efficiency. Preferably, the vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 can be about 80% to 200% of the vertical length d2 of the opening portion (d1:d2 = 0.8 to 2:1). The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 can be about 90% to about 150% of the vertical length d2 of the opening portion (d1:d2 = 0.9 to 1.5:1). The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 can be about 95% to about 110% of the vertical length d2 of the opening portion (d1:d2 = 0.95 to 1.1:1).

[0086] The deposition mask may include multiple effective portions AA1, AA2 and AA3 spaced apart in the longitudinal direction and an ineffective portion UA ​​in addition to the effective portions.

[0087] The effective portions AA1, AA2, and AA3 of the deposition mask may include multiple vias TH and island portions IS supported between the multiple vias TH. The island portion IS may refer to an unetched portion on one or another surface of the effective portion of the deposition mask. Specifically, the island portion IS may be an unetched area between a via and a via on another surface where a large surface hole of the effective portion of the deposition mask is formed. Therefore, the island portion IS may be arranged parallel to one surface of the deposition mask.

[0088] The island portion IS can be coplanar with another surface of the deposition mask. Therefore, the island portion IS can have the same thickness as at least a portion of the invalid portion on the other surface of the deposition mask. Specifically, the island portion IS can have the same thickness as the unetched portion of the invalid portion on the other surface of the deposition mask. Therefore, the deposition uniformity of sub-pixels can be improved by using the deposition mask.

[0089] Alternatively, the island portion IS can be disposed in a flat surface parallel to the other surface of the deposition mask. Here, by means of an etching process around the island portion IS, the parallel flat surface may include a height difference of ±1 μm or less between the other surface of the deposition mask in which the island portion IS is disposed and the other surface of the unetched deposition mask of the invalid portion.

[0090] The island-shaped portion IS can be located between adjacent vias in a plurality of vias. That is, the area outside the vias can be the island-shaped portion IS in the effective portions AA1, AA2 and AA3 of the deposition mask 100.

[0091] The effective portions AA1, AA2 and AA3 may include: a plurality of small surface holes V1 formed on one surface of the deposition mask 100; a plurality of large surface holes V2 formed on another surface opposite to the one surface; and a through hole TH formed through a connecting portion CA that connects the boundaries between the small surface holes and the large surface holes.

[0092] The deposition mask 100 may include an invalid portion UA ​​located at the periphery of the effective area.

[0093] The effective portion AA can be the internal region when connecting the periphery of the outermost via located in a plurality of vias for depositing organic material. The ineffective portion UA ​​can be the external region when connecting the periphery of the outermost via located in a plurality of vias for depositing organic material.

[0094] The invalid region UA ​​is the area excluding the effective region of the sedimentary region DA and the non-sedimentary region NDA. The invalid region UA ​​may include the outer regions OA1, OA2, and OA3 surrounding the effective regions AA1, AA2, and AA3.

[0095] The deposition mask according to the embodiment may include multiple outer regions OA1, OA2, and OA3. The number of outer regions may correspond to the number of effective portions. That is, an effective portion may include an outer region spaced apart from one end of an effective portion in the horizontal and vertical directions at predetermined distances.

[0096] The first effective portion AA1 may be included in the first outer region OA1. The first effective portion AA1 may include a plurality of through holes for forming the deposited material. The first outer region OA1 surrounding the periphery of the first effective portion AA1 may include a plurality of through holes.

[0097] The shape of the through-hole TH in the first effective portion AA1 can correspond to the shape of the through-hole in the first outer region OA1. Therefore, the uniformity of the through-holes included in the first effective portion AA1 can be improved. For example, the shape of both the through-hole TH in the first effective portion AA1 and the through-hole in the first outer region OA1 can be circular. However, the implementation is not limited to this, and the through-holes can have various shapes, such as rhomboid patterns, elliptical patterns, etc.

[0098] Multiple vias included in the first outer region OA1 are used to reduce etching failure of vias located at the outermost part of the effective portion. Therefore, the deposition mask according to the embodiment can improve the uniformity of the multiple vias located in the effective portion and can improve the quality of the deposition pattern formed by the mask.

[0099] The vias included in the effective portion can have a shape that partially corresponds to the shape of the vias included in the ineffective portion. As an example, the vias included in the effective portion can have a different shape than the vias located at the edge of the ineffective portion. Therefore, the stress difference can be adjusted according to the position of the deposition mask.

[0100] The second effective portion AA2 may be included in the second outer region OA2. The second effective portion AA2 may have a shape corresponding to the first effective portion AA1. The second outer region OA2 may have a shape corresponding to the first outer region OA1.

[0101] The second outer region OA2 may also include two through holes in both the horizontal and vertical directions, respectively, from the through holes located at the outermost part of the second effective portion AA2. For example, in the second outer region OA2, the two through holes may be arranged in a row horizontally at the upper and lower parts of the through holes located at the outermost part of the second effective portion AA2. For example, in the second outer region OA2, the two through holes may be arranged in a row vertically at the left and right sides of the through holes located at the outermost part of the second effective portion AA2. The multiple through holes included in the second outer region OA2 are used to reduce etching failure of the through holes located at the outermost part of the effective portion. Therefore, the deposition mask according to the embodiment can improve the uniformity of the multiple through holes located in the effective portion and can improve the quality of the deposition pattern manufactured by the mask.

[0102] The third effective portion AA3 may be included in the third outer region OA3. The third effective portion AA3 may include multiple through-holes for forming the deposited material. The third outer region OA3 surrounding the third effective portion AA3 may include multiple through-holes.

[0103] The third effective portion AA3 may have a shape corresponding to the shape of the first effective portion AA1. The third outer region OA3 may have a shape corresponding to the shape of the first outer region OA1.

[0104] Figure 5 and Figure 7 This is a plan view and photograph showing the effective portion of the deposition mask. Figure 5 and Figure 7 It is a plan view or photograph of the valid part of any one of the first valid part AA1, the second valid part AA2, and the third valid part AA3. Figure 5 and Figure 6 These are views used to describe the shape of the vias and the arrangement of the vias, and of course, the deposition mask according to the embodiment is not limited to the number of vias shown in the figures.

[0105] Reference Figure 5 The deposition mask 100 may include multiple vias. These vias may have a circular shape. Therefore, the diameter Cx of the vias in the horizontal direction and the diameter Cy in the vertical direction may correspond to each other.

[0106] Alternative locations, see reference Figure 7 The through-hole can be elliptical in shape. Therefore, the horizontal diameter Cx and the vertical diameter Cy of the through-hole can be different from each other. For example, the horizontal diameter Cx can be larger than the vertical diameter Cy. However, the implementation is not limited to this, and of course, the through-hole can also be rectangular, octagonal, or rounded octagonal.

[0107] As an example, in the case of measuring the horizontal diameter Cx and vertical diameter Cy of any one of the reference holes in the through holes, the deviation between the horizontal diameter Cx and the vertical diameter Cy of each adjacent reference hole can be achieved to be 2% to 10%.

[0108] In other words, when the dimensional deviation between adjacent holes of a reference hole is achieved to be 2% to 10%, deposition uniformity can be ensured. The dimensional deviation between the reference hole and adjacent holes can be 4% to 9%. For example, the dimensional deviation between the reference hole and adjacent holes can be 5% to 7%. For example, the dimensional deviation between the reference hole and adjacent holes can be 2% to 5%. When the dimensional deviation between the reference hole and adjacent holes is less than 2%, the occurrence rate of moiré patterns in the OLED panel after deposition may increase. When the dimensional deviation between the reference hole and adjacent holes is greater than 10%, the occurrence rate of color inhomogeneity in the OLED panel after deposition may increase. The average deviation of the diameter of the via can be ±5 μm. For example, the average deviation of the diameter of the via can be ±3 μm. For example, the average deviation of the diameter of the via can be ±1 μm. In the implementation, deposition efficiency can be improved by achieving a dimensional deviation between the reference hole and adjacent holes within ±3 μm.

[0109] Through holes can be arranged in rows, or they can be arranged to intersect each other according to their direction. (See reference...) Figure 5 Through holes can be arranged in rows along the vertical axis and also in rows along the horizontal axis.

[0110] The first through hole TH1 and the second through hole TH2 can be arranged in a row along the horizontal axis. In addition, the third through hole TH1 and the fourth through hole TH4 can be arranged in a row along the horizontal axis.

[0111] The first through hole TH1 and the third through hole TH3 can be arranged in a row along the vertical axis. In addition, the second through hole TH2 and the fourth through hole TH4 can be arranged in a row along the horizontal axis.

[0112] When through-holes are arranged in rows along the vertical and horizontal axes, the island-shaped portion is located between two adjacent through-holes in the diagonal direction, where the vertical and horizontal axes intersect. That is, the island-shaped portion can be positioned between two adjacent through-holes in the diagonal direction.

[0113] The island-shaped portion IS can be positioned between the first through hole TH1 and the fourth through hole TH4. Furthermore, the island-shaped portion IS can be positioned between the second through hole TH2 and the third through hole TH3. The island-shaped portion IS can be positioned relative to the horizontal axis intersecting the two adjacent through holes at inclination angles of approximately +45 degrees and approximately -45 degrees, respectively. Here, the inclination angle of approximately ±45 degrees refers to the diagonal direction between the horizontal axis and the vertical axis, and the diagonal inclination angle is measured on the same plane of the horizontal and vertical axes.

[0114] Reference Figure 7 The through holes can be arranged in rows along either the vertical or horizontal axis, and can be arranged to intersect each other along one axis.

[0115] The first through hole TH1 and the second through hole TH2 can be arranged in a row along the horizontal axis. The third through hole TH1 and the fourth through hole TH4 can be arranged to intersect the first through hole TH1 and the second through hole TH2 along the vertical axis, respectively.

[0116] When through holes are arranged in a row in either the vertical or horizontal axis and intersect in another direction, the island portion can be located between two adjacent through holes in the other directions along the vertical and horizontal axes. Alternatively, the island portion can be located between three adjacent through holes. Two of the three through holes are arranged in a row, and the remaining through hole can refer to a through hole in the region between two through holes located at adjacent positions in the direction corresponding to the row direction. The island portion IS can be located between the first through hole TH1, the second through hole TH2, and the third through hole TH3. Alternatively, the island portion IS can be located between the second through hole TH2, the third through hole TH3, and the fourth through hole TH4.

[0117] Figure 5 and Figure 7 The island portion IS can refer to the unetched surface between the vias in another surface of the deposition mask that forms the large surface apertures of the effective portion AA. Specifically, the island portion IS can be another surface of the unetched deposition mask besides the second etched surface ES2 and the vias TH located in the large surface apertures of the effective portion AA of the deposition mask. The deposition mask of this embodiment can be used to deposit high-resolution to ultra-high-resolution OLED pixels with a resolution of 500 PPI to 800 PPI or higher.

[0118] For example, the deposition mask of the embodiment can be used to form a high-resolution deposition pattern with a resolution of one-quarter Full HD (QHD), which has a resolution of 500 PPI or higher. For example, the deposition mask of the embodiment can be used to deposit OLED pixels with a pixel count of 2560 × 1440 or higher and a resolution of 530 PPI or higher in both the horizontal and vertical directions. According to the deposition mask of the embodiment, based on a 5.5-inch OLED panel, the number of pixels per inch can be 530 PPI or higher. That is, an effective portion of the deposition mask included in the embodiment can be used to form a pixel count with a resolution of 2560 × 1440 or higher.

[0119] For example, the deposition mask of the embodiment can be used to form a deposition pattern with an ultra-high resolution (UHD), where UHD has a resolution of 700 PPI or higher. For example, the deposition mask of the embodiment can be used to form a deposition pattern with UHD-level resolution for depositing OLED pixels with a pixel count of 3840 × 2160 or higher and a resolution of 794 PPI in both the horizontal and vertical directions.

[0120] The diameter of a through-hole can be the width between the connected portions CA. Specifically, the diameter of a through-hole can be measured at the point where the end of the inner surface in the smaller surface hole intersects with the end of the inner surface in the larger surface hole. The measurement direction of the through-hole diameter can be any one of the horizontal, vertical, and diagonal directions. The diameter of the through-hole measured in the horizontal direction can be 33 μm or less. Alternatively, the diameter of the through-hole measured in the horizontal direction can be 33 μm or less. Alternatively, the diameter of the through-hole can be the average of the values ​​measured in the horizontal, vertical, and diagonal directions, respectively.

[0121] Therefore, the deposition mask according to the implementation method can achieve QHD resolution.

[0122] For example, the diameter of the via along the horizontal direction can be 20 μm or less. Therefore, the deposition mask according to the embodiment can achieve UHD resolution.

[0123] For example, the diameter of the via can be from 15 μm to 33 μm. Alternatively, the diameter can be from 19 μm to 33 μm. Or, the diameter can be from 20 μm to 17 μm. When the diameter of the via exceeds 33 μm, achieving a resolution of 500 PPI or higher may be difficult. On the other hand, when the diameter of the via is less than 15 μm, deposition failure may occur.

[0124] The diameter of the via can be measured based on the green (G) pattern. This is because the G pattern has a lower visual recognition rate than the R and B patterns, so a larger number of G patterns are needed, and the spacing between vias can be narrower than that of the R and B patterns.

[0125] The measurement direction of the diameter of a through hole and the measurement direction of the distance between two through holes can be the same. The distance between two adjacent through holes can be the value of the distance measured in the horizontal or vertical direction.

[0126] Reference Figure 5 The spacing between two adjacent through holes in a plurality of through holes along the horizontal direction can be 48 μm or less. For example, the spacing between two adjacent through holes in a plurality of through holes along the horizontal direction can be from 20 μm to 48 μm. For example, the spacing between two adjacent through holes in a plurality of through holes along the horizontal direction can be from 30 μm to 35 μm.

[0127] Here, the spacing can refer to the distance P1 between the center of the first through hole TH1 and the center of the second through hole TH2, which are adjacent in the horizontal direction.

[0128] Alternatively, the spacing here may refer to the distance P2 between the center of the first island portion and the center of the second island portion, which are adjacent in the horizontal direction. Here, the center of the island portion may be the center of another unetched surface between four adjacent vias in the horizontal and vertical directions. For example, based on the first via TH1 and the second via TH2, which are adjacent in the horizontal direction, the center of the island portion may refer to the point where the horizontal and vertical axes intersect, connecting the edges of an island portion IS, which lies in the region between the third via TH3, which is vertically adjacent to the first via TH1, and the fourth via TH4, which is vertically adjacent to the second via TH2.

[0129] Alternatively, the spacing may refer to the distance P2 between the center of the first island portion and the center of the second island portion adjacent to the first island portion in three adjacent through-holes along the horizontal direction.

[0130] Reference Figure 7 The spacing can refer to the distance P2 between the center of the first island portion in the horizontal direction and the center of the second island portion adjacent to the first island portion. Here, the center of the island portion can be the center of the unetched surface between one via and two adjacent vias in the vertical direction. Alternatively, the center of the island portion can be the center of the unetched surface between two vias and an adjacent via in the vertical direction. That is, the center of the island portion is the center of the unetched surface between three adjacent vias, and the three adjacent vias can form a triangle when connected at the center.

[0131] For example, the center of the island portion may be the center of another unetched surface located at least partially or entirely in the region between the third via TH3 and the first via TH1 and the second via TH2, which are adjacent to each other in the horizontal direction in the vertical direction, and between the first via TH1 and the second via TH2.

[0132] In the deposition mask according to the embodiment, the diameter of the vias is 33 μm or less, and the spacing between the vias is 48 μm or less, thus enabling the deposition of OLED pixels with a resolution of 500 PPI or higher. In other words, QHD resolution can be achieved using the deposition mask according to the embodiment.

[0133] The diameter of the vias and the spacing between them can be the dimensions used to form the green subpixels. The deposition mask can be an OLED deposition mask used to achieve a quarter of the full HD display pixels.

[0134] For example, the deposition mask can be used to deposit at least one sub-pixel of red (R), first green (G1), blue (B), and second green (G2). Specifically, the deposition mask can be used to deposit the red (R) sub-pixel. Alternatively, the deposition mask can be used to deposit the blue (B) sub-pixel. Alternatively, the deposition mask can be used to simultaneously form the first green (G1) sub-pixel and the second green (G2) sub-pixel.

[0135] The pixel arrangement of an organic light-emitting display device can be configured in the order of "red R - first green G1 - blue B - second green G2". In this case, red R - first green G1 can form one pixel RG, and blue B - second green G2 can form another pixel BG. In an organic light-emitting display device with this arrangement, since the deposition spacing of the green light-emitting organic material is narrower than that of the red and blue light-emitting organic materials, a deposition mask as described in this invention may be required.

[0136] In the deposition mask according to the embodiment, the diameter of the vias is 20 μm or less, and the spacing between the vias is 32 μm or less, thus enabling the deposition of OLED pixels with a resolution of 800 PPI. In other words, UHD resolution can be achieved using the deposition mask according to the embodiment.

[0137] The diameter of the vias and the spacing between them can be the dimensions used to form the green subpixels. The deposition mask can be an OLED deposition mask used to achieve ultra-high display pixel density.

[0138] Reference Figure 6 They described respectively Figure 5The cross section along the A-A' direction and the cross section along the B-B' direction.

[0139] Figure 6 It shows the description Figure 5 A view of each overlapping section in terms of height difference and dimensions between the section along the A-A' direction and the section along the B-B' direction.

[0140] First, the description Figure 5 The cross-section along the A-A' direction. The A-A' direction is the cross-section that intersects the central region between the first through hole TH1 and the third through hole TH3, which are adjacent in the vertical direction. That is to say, the cross-section along the A-A' direction may not include the through holes.

[0141] The island portion IS between the etched surface ES2 in the large surface aperture and the unetched surface of the deposition mask in the large surface aperture can be located in a cross section along the A-A' direction. Therefore, the island portion IS can include a surface parallel to one of the unetched surfaces of the deposition mask. Alternatively, the island portion IS can include a surface that is the same as or parallel to another unetched surface of the deposition mask.

[0142] Next, we will describe along Figure 5 The cross-section along the B-B' direction. The B-B' direction is the cross-section that intersects the center of each of the first through-hole TH1 and the second through-hole TH2 that are adjacent in the horizontal direction. That is, the cross-section along the B-B' direction includes multiple through-holes.

[0143] A rib can be located between the third through hole TH3 and the fourth through hole TH4, which are adjacent in the direction B-B'. Another rib can be located between the fourth through hole TH4 and the fifth through hole, which is adjacent to the fourth through hole in the horizontal direction but is located in the opposite direction to the third through hole TH3. A through hole can be located between one rib and another rib. That is, a through hole can be located between two adjacent ribs in the horizontal direction.

[0144] In the cross-section along the B-B' direction, the rib RB is located in the region of the etched surface ES2 in the large surface hole, and the etched surfaces ES2 in adjacent large surface holes are connected to each other. Here, the rib RB can be the region where the boundary between two adjacent large surface holes is connected. Since the rib RB is an etched surface, the rib RB can have a thickness smaller than that of the island portion IS.

[0145] For example, the island-shaped portion can have a width of 2 μm or greater. That is, the width along the direction parallel to the remaining unetched portion on the other surface can be 2 μm or less. When the width of one end of an island-shaped portion is 2 μm or greater, the overall volume of the deposition mask can be increased. Deposition masks with this structure ensure sufficient rigidity to resist tension applied to processes such as organic material deposition, and are therefore advantageous for maintaining the uniformity of vias.

[0146] Reference Figure 8 , will describe Figure 5 The B-B' cross section and according to Figure 6 The enlarged cross-section of the through-holes and the ribs between the ribs RB in the effective region. In the deposition mask of the embodiment, the thickness of the effective portion AA in which the through-holes are formed by etching can be different from the thickness of the ineffective portion UA ​​that is not etched. Specifically, the thickness of the ribs RB can be less than the thickness in the ineffective portion UA ​​that is not etched.

[0147] In the deposition mask of the embodiment, the thickness of the invalid portion can be greater than the thickness of the valid portion. For example, in the deposition mask of the embodiment, the maximum thickness of the invalid portion or undeposited area can be 30 μm or less. For example, in the deposition mask of the embodiment, the maximum thickness of the invalid portion or undeposited area can be 25 μm or less. For example, in the deposition mask of the embodiment, the maximum thickness of the invalid portion or undeposited area can be 15 μm to 25 μm. When the maximum thickness of the invalid portion or undeposited area of ​​the deposition mask according to the embodiment is greater than 30 μm, it may be difficult to form vias with fine dimensions because the metal plate material is very thick. When the maximum thickness of the invalid portion or undeposited area of ​​the deposition mask according to the embodiment is less than 15 μm, it may be difficult to form vias with uniform dimensions because the metal plate material is very thin.

[0148] The maximum thickness T3 measured at the center of the rib RB can be 15 μm or less. For example, the maximum thickness T3 measured at the center of the rib RB can be 7 μm to 10 μm. For example, the maximum thickness T3 measured at the center of the rib RB can be 6 μm to 9 μm. When the maximum thickness T3 measured at the center of the rib RB is greater than 15 μm, it may be difficult to form OLED deposition patterns with a high resolution of 500 PPI or higher. When the maximum thickness T3 measured at the center of the rib RB is less than 6 μm, it may be difficult to form deposition patterns uniformly.

[0149] The height H1 of the small surface apertures of the deposition mask can be 0.2 to 0.4 times the maximum thickness T3 measured at the center of the rib RB. For example, the maximum thickness T3 measured at the center of the rib RB can be 7 μm to 9 μm, and the height H1 between one surface of the deposition mask and the connecting portion can be 1.4 μm to 3 μm. The height H1 of the small surface apertures of the deposition mask can be 3 μm or less. For example, the height of the small surface apertures can be 0.1 μm to 3 μm. For example, the height of the small surface apertures of the deposition mask can be 0.5 μm to 3 μm. For example, the height of the small surface apertures of the deposition mask can be 1 μm to 3 μm. Here, the height can be measured along the thickness measurement direction of the deposition mask, i.e., along the depth direction, and can be the height measured from one surface of the deposition mask to the connecting portion. In detail, it can be along the thickness measurement direction of the deposition mask, i.e., along the depth direction. Figure 4 or Figure 5 The measurements are taken along the z-axis, which forms a 90-degree angle with the horizontal (x-direction) and vertical (y-direction) axes in the plan view.

[0150] When the height between one surface of the deposition mask and the connected portion is greater than 3 μm, deposition failure may occur due to the shadowing effect caused by the diffusion of the deposited material into an area larger than the area of ​​the via during OLED deposition.

[0151] The aperture W1 at one surface of the small surface aperture V1 forming the deposition mask and the aperture W2 at the connecting portion of the boundary between the small surface aperture V1 and the large surface aperture V2 can be similar to or different from each other. The aperture W1 at one surface of the small surface aperture V1 forming the deposition mask can be larger than the aperture W2 at the connecting portion.

[0152] For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion can be from 0.01 μm to 1.1 μm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion can be from 0.03 μm to 1.1 μm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion can be from 0.05 μm to 1.1 μm.

[0153] When the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion is greater than 1.1 μm, deposition failure may occur due to the shadowing effect.

[0154] As the radius of curvature of the first inner surface ES1 in the small surface aperture V1 increases, the shadowing effect may decrease due to the diffusion of the deposited material. In the deposition mask according to the embodiment, the radius of curvature R of the small surface aperture can be from 3 μm to 86 μm. For example, the radius of curvature R of the small surface aperture can be from 4.5 μm to 86 μm. For example, the radius of curvature R of the small surface aperture can be from 17 μm to 86 μm. When the radius of curvature R of the small surface aperture is from 3 μm to 86 μm, the deposited material can form a pattern with a uniform shape.

[0155] The inclination angle of the end E1 connecting the small surface aperture located on one surface of the deposition mask and the end E2 connecting the small surface aperture and the large surface aperture can be between 70 degrees and 89 degrees. For example, the inclination angle of the end E1 connecting the small surface aperture located on one surface of the deposition mask and the end E2 connecting the small surface aperture and the large surface aperture can be between 75 degrees and 89 degrees. For example, the inclination angle of the end E1 connecting the small surface aperture located on one surface of the deposition mask and the end E2 connecting the small surface aperture and the large surface aperture can be between 78 degrees and 89 degrees. For example, the inclination angle of the end E1 connecting the small surface aperture located on one surface of the deposition mask and the end E2 connecting the small surface aperture and the large surface aperture can be between 85 degrees and 89 degrees.

[0156] When the tilt angle of the connection between one end E1 of the small surface hole on one surface of the deposition mask and the other end E2 of the connecting portion between the small surface hole and the large surface hole exceeds 89 degrees, the shadowing effect can be prevented. However, problems may arise due to organic matter remaining in the through-holes during deposition. Therefore, it may be difficult to form a deposition pattern of uniform size.

[0157] When the tilt angle of the connection between one end E1 of the small surface hole on one surface of the deposition mask and one end E2 of the connecting portion between the small surface hole and the large surface hole is less than 70 degrees, deposition failure may occur due to the shadowing effect.

[0158] In other words, in the deposition mask according to the embodiment, the tilt angle θ1 of the small surface apertures can be from 70 degrees to 89 degrees, and the curvature of the small surface apertures can be formed from 3 μm to 86 μm. This prevents shading effects and solves the problem of residual organic matter in the deposition mask during the deposition process. During the process of separating the deposition mask from the substrate after the organic matter has been deposited on the substrate, the problem of organic matter deposited on the substrate adhering to the deposition mask and the removal of organic matter can be avoided.

[0159] Additionally, the volume of the island-shaped portions can be increased to prevent deformation during the pulling of the deposition mask.

[0160] In a deposition mask capable of achieving 500 PPI resolution, the tilt angle of one end E1 connecting the small surface aperture and the other end E2 connecting the small surface aperture and the large surface aperture can be from 75 degrees to 89 degrees, and the tilt radius of curvature of the small surface aperture can be from 4.5 μm to 86 μm.

[0161] In a deposition mask capable of achieving a resolution of 600 PPI to 700 PPI, the tilt angle of one end E1 connecting the small surface aperture and the other end E2 connecting the small surface aperture and the large surface aperture can be 78 degrees to 89 degrees, and the tilt radius of curvature of the small surface aperture can be 6 μm to 86 μm.

[0162] In a deposition mask capable of achieving a resolution of 800 PPI or higher, the tilt angle of one end E1 connecting the small surface aperture and the other end E2 connecting the small surface aperture and the large surface aperture can be 85 to 89 degrees, and the tilt radius of curvature of the small surface aperture can be 17 μm to 86 μm.

[0163] The tilt angle of the end E3 connecting the large surface aperture V2 located on the opposite surface of the deposition mask and the end E2 of the connecting portion between the small surface aperture and the large surface aperture can be from 40 degrees to 55 degrees. Therefore, a high-resolution deposition pattern with 500 PPI or higher can be formed, and at the same time, island-like portions can exist on the other surface of the deposition mask.

[0164] Reference Figure 9 The structure of the cross-section of the rib portion of the deposition mask according to the comparative example will be described.

[0165] In the deposition mask according to the comparative example, the tilt angle of the small surface aperture measured at the location corresponding to the example can be smaller than the tilt angle of the small surface aperture measured in the example. For example, the tilt angle θ2 of the aperture of the deposition mask according to the comparative example can be less than 70 degrees.

[0166] In the deposition mask according to the comparative example, the height of the small surface aperture measured at the location corresponding to the example can be greater than the height of the small surface aperture measured in the example. For example, the height of the aperture in the deposition mask according to the comparative example can exceed 3 μm.

[0167] In the deposition mask according to the comparative example, the difference between the diameter of the small surface hole and the diameter of the through hole measured at the location corresponding to the example can be greater than the difference between the diameter of the small surface hole and the diameter of the through hole measured in the example. For example, in the deposition mask according to the comparative example, the difference between the diameter W1 of the small surface hole and the diameter W2 of the through hole measured at the location corresponding to the example can exceed 1.1 μm.

[0168] Reference Figure 10The method for manufacturing a deposition mask according to an embodiment will be described.

[0169] In a method for manufacturing a deposition mask for metal materials used in OLED pixel deposition, a deposition mask according to an embodiment can be manufactured. The method includes: a first step of preparing a substrate metal plate with a thickness of 20 μm to 30 μm; a second step of forming a patterned photoresist layer on one side of the substrate metal plate, forming a groove on one surface of the substrate metal plate by half-etching an opening portion of the photoresist layer, forming a patterned photoresist layer on the other side of the substrate metal plate opposite to the first side, and forming a via connected to the groove on one surface of the substrate metal plate by etching an opening portion of the photoresist layer; and a third step of removing the photoresist layer to form a deposition mask including a large surface hole formed on one surface, a small surface hole formed on the other surface opposite to the first surface, and a via formed by a connecting portion connecting the boundary between the large and small surface holes. Thus, a deposition mask capable of achieving a resolution of 500 PPI or higher can be manufactured.

[0170] In a method for fabricating a deposition mask for metal materials used in OLED pixel deposition, a deposition mask according to an embodiment can be fabricated. The method includes: a first step of preparing a substrate metal plate with a thickness of 15 μm to 20 μm; a second step of forming a patterned photoresist layer on one side of the substrate metal plate, forming a groove on one surface of the substrate metal plate by half-etching an opening portion of the photoresist layer, forming a patterned photoresist layer on the other side of the substrate metal plate opposite to the first side, and forming a via connected to the groove on one surface of the substrate metal plate by etching an opening portion of the photoresist layer; and a third step of removing the photoresist layer to form a deposition mask including a large surface hole formed on one surface, a small surface hole formed on the other surface opposite to the first surface, and a via formed by a connecting portion connecting the boundary between the large and small surface holes. Thus, a deposition mask capable of achieving a resolution of 800 PPI or higher can be fabricated.

[0171] First, the first step in preparing a substrate metal plate BM with a thickness of 20 μm to 30 μm will be described.

[0172] The base metal plate BM may include metallic materials. The base metal plate BM may include a nickel alloy. For example, the base metal plate BM may be an alloy of nickel and iron. In this case, nickel may be about 35 wt% to 37 wt%, and iron may be about 63 wt% to 65 wt%. For example, the base metal plate BM may include Invar, which includes about 35 wt% to 37 wt% nickel, about 63 wt% to 65 wt% iron, and trace amounts of at least one of C, Si, S, P, Cr, Mo, Mn, Ti, Co, Cu, Fe, Ag, Nb, V, In, and Sb. Here, trace amounts may mean no more than 1 wt%. Specifically, trace amounts may refer to 0.5 wt% or less. However, the base metal plate BM is not limited to this and may obviously include a variety of metallic materials.

[0173] Nickel alloys, such as Invar, have a very small coefficient of thermal expansion, which gives them the advantage of increasing the lifespan of deposition masks.

[0174] Here, the first step may also include the step of reducing the thickness based on the target thickness of the base metal plate.

[0175] For example, the substrate metal sheet BM can have a thickness of 25 μm to 30 μm. By reducing the thickness through rolling and / or etching, the substrate metal sheet BM can have a thickness of 15 μm to 25 μm. Here, etching can include electro-etching or chemical etching.

[0176] The substrate metal plate BM, or a substrate metal plate BM that has undergone a thickness reduction step, may optionally include a surface treatment step.

[0177] For example, there is a problem with uniform etching of nickel alloys such as Invar. That is, in nickel alloys such as Invar, the etching rate can be increased in the initial stage of etching. Therefore, there is a problem that the etching factor for small surface holes may decrease. When the etching factor for small surface holes decreases, the following problems may occur: deposition mask formation may result in deposition failure due to shadowing effects. Alternatively, photoresist layer stripping may occur due to side etching of large surface holes. Furthermore, as the via size increases, it may become difficult to form vias with fine dimensions. In addition, uneven via formation may reduce the yield of the deposition mask.

[0178] Therefore, in embodiments, the surface layer for surface modification can be applied to the surface of a base metal plate with different compositions, contents, crystal structures, and corrosion rates. Here, surface modification may mean applying layers made of various materials to the surface to improve the etch factor.

[0179] In other words, the surface treatment layer can be a layer used to prevent rapid etching on the surface of the substrate metal plate. The surface treatment layer can be an etch barrier layer having an etch rate lower than that of the substrate metal plate. The surface treatment layer can have crystal planes and crystal structures different from those of the substrate metal layer. For example, because the surface treatment layer includes elements different from those of the substrate metal layer, its crystal planes and crystal structures can differ from each other.

[0180] In the same corrosive environment, the surface treatment layer can have a corrosion potential different from that of the base metal plate. For example, when the same etchant is applied at the same temperature for the same duration, the surface treatment layer can have a corrosion current or corrosion potential different from that of the base metal plate.

[0181] The base metal plate BM may include a surface treatment layer or surface treatment portion on one and / or two surfaces, the entire surface, and / or its effective area. The surface treatment layer or surface treatment portion may include elements different from those of the base metal plate, or may include metallic elements with a slower corrosion rate in greater quantities than those of the base metal plate.

[0182] For example, the surface treatment layer may include at least one metal selected from nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al), and their alloys, and the content of at least one metal selected from nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al), and their alloys may be greater than the metal content of the base metal plate.

[0183] In a further embodiment including this surface treatment step, the surface treatment layer can be disposed on the surface of the substrate metal plate. In the surface treatment step, a surface treatment layer with elements different from those of the substrate metal plate BM is disposed such that the corrosion rate on the surface is slower than the corrosion rate of the raw material of the substrate metal plate BM. Therefore, the etch factor of the deposition mask according to the embodiment can be increased. Furthermore, since the deposition mask according to the embodiment can uniformly form multiple vias, the deposition efficiency of the R, G, and B patterns can be improved. Here, including different elements may mean that the substrate metal plate BM and the surface treatment layer comprise at least one different element, or even if all elements are the same, it may comprise alloys with different contents.

[0184] Next, the steps for setting up a patterned photoresist layer P1 on one surface of a substrate metal plate will be described. The patterned photoresist layer P1 can be set on one surface of the substrate metal plate to form small surface holes. An etch barrier layer (e.g., a coating or film) for preventing etching can be set on another surface opposite to one surface of the substrate metal plate.

[0185] Next, the second step of forming a groove on a surface of a metal plate by half-etching the opening portion of the photoresist layer P1 will be described.

[0186] The opening portion of the photoresist layer P1 can be exposed to etchants, etc., and thus etching can occur in the opening portion of a surface of a substrate metal plate on which the photoresist layer P1 is not disposed.

[0187] The second step can be to etch a substrate metal plate with a thickness T1 of about 20 μm to about 30 μm to about half its thickness. The depth of the groove formed by the second step can be about 10 μm to 15 μm. That is, the thickness T2 of the substrate metal plate measured at the center of the groove after the second step can be about 10 μm to 15 μm.

[0188] The second step can be anisotropic etching or a semi-additive process (SAP). Specifically, anisotropic etching or a semi-additive process can be used to semi-etch the opening portion of the photoresist layer. Therefore, in the groove formed by semi-etching, the etching rate in the depth direction (b direction) can be faster than the side etching rate (a direction) compared to isotropic etching.

[0189] The etch factor for small surface holes can be between 2.0 and 3.0. For example, the etch factor for small surface holes can be between 2.1 and 3.0. For example, the etch factor for small surface holes can be between 2.2 and 3.0.

[0190] Here, the etch factor may mean the depth B of the etched small surface hole divided by the width A of the photoresist layer extending from the island-like portion on the small surface hole and protruding toward the center of the via (etch factor = B / A). A may mean the average of the width of one side of the photoresist layer protruding on a surface hole and the width of the opposite side.

[0191] The steps for forming the through hole will be described next.

[0192] First, a patterned photoresist layer P2 can be disposed on the opposite surface of the substrate metal plate. A patterned photoresist layer P2 with openings can be disposed on the opposite surface of the substrate metal plate to form large surface holes. An etch-blocking layer, such as a coating or film, for preventing etching can be disposed on one surface of the substrate metal plate.

[0193] The openings of the photoresist layer P2 can be exposed to the etchant, and therefore etching can occur in the openings on the other surface of the substrate metal plate on which the photoresist layer P2 is not disposed. The other surface of the substrate metal plate can be etched by anisotropic etching or isotropic etching.

[0194] The opening portion of the photoresist layer is etched, and thus a groove on one surface of the metal plate can be connected to a large surface hole to form a through hole.

[0195] In the second step, 1) a patterned photoresist layer P1 is disposed on one surface of the substrate metal plate, and a patterned photoresist layer P2 is disposed on the other surface of the substrate metal plate. Then, 2) a through-hole can be formed by etching one surface and the other surface of the substrate metal plate on the same surface.

[0196] Alternatively, in the second step, 1) a patterned photoresist layer P1 can be disposed on one surface of the substrate metal plate, and 2) a groove can be formed on only one surface of the substrate metal plate by half-etching the opening portion of the photoresist layer P1. Then, 3) a patterned photoresist layer P2 can be disposed on another surface of the substrate metal plate. And then, 4) a through-hole can be formed on the other surface of the substrate metal plate by etching the opening portion of the photoresist layer P2.

[0197] Alternatively, in the second step, 1) a patterned photoresist layer P2 can be disposed on another surface of the substrate metal plate, and 2) a large surface hole can be formed on only the other surface of the substrate metal plate by etching the opening portion of the photoresist layer P2. Then, 3) a patterned photoresist layer P1 can be disposed on one surface of the substrate metal plate. And then, 4) a through-hole connecting to the large surface hole can be formed on one surface of the substrate metal plate by half-etching the opening portion of the photoresist layer P1.

[0198] Next, the photoresist layer is removed, and a deposition mask is formed by a third step of forming a deposition mask, which includes: a large surface hole formed on one surface, a small surface hole formed on another surface opposite to the surface, and a through hole formed by a connecting portion connecting the boundary between the large surface hole and the small surface hole.

[0199] The deposition mask 100 formed in the third step may include the same material as the substrate metal plate. For example, the deposition mask may include a material having the same composition as the substrate metal plate. For example, the island-shaped portions of the deposition mask may include the surface treatment layer described above.

[0200] In the deposition mask formed in the third step, the maximum thickness at the center of the rib can be less than the maximum thickness in the unetched invalid region. For example, the maximum thickness at the center of the rib can be 15 μm. Alternatively, the maximum thickness at the center of the rib can be less than 10 μm. However, the maximum thickness in the invalid region of the deposition mask can be 20 μm to 30 μm. The maximum thickness in the invalid region of the deposition mask can be equal to the thickness of the substrate metal plate prepared in the first step. Alternatively, after the thickness reduction step in the first step, the maximum thickness in the invalid region of the deposition mask can be 15 μm to 25 μm.

[0201] Reference Figure 11 The method for fabricating a deposition mask based on a comparative example will be described.

[0202] Reference Figure 11 It is possible to prepare a base metal plate BM with the same thickness and material as the example.

[0203] Next, a photoresist layer P1 can be deposited on one surface of the deposition mask according to the comparative example.

[0204] In the following text, the semi-etched groove portion of the deposition mask according to the comparative example can be formed by isotropic etching. That is, the etch factor of the small surface hole formed by the isotropic etching of the comparative example can be smaller than the etch factor of the small surface hole formed by the anisotropic etching or semi-additive process of the example. As an example, the etch factor of the small surface hole formed by isotropic etching can be 1.5 to 2.5. As an example, the etch factor of the small surface hole formed by isotropic etching can be 1.5 to 2.1.

[0205] In other words, in the case of isotropic etching according to the comparative example, the side etching (a direction) speed can be faster than the side etching speed of the example.

[0206] Next, in the deposition mask according to the comparative example, after the photoresist layer P2 is set on another surface opposite to one surface, the deposition mask can be formed by etching.

[0207] In the deposition mask according to the comparative example, the height H1 between one surface of the deposition mask on which small surface holes are formed and the connected portion can exceed 3 μm.

[0208] In the deposition mask according to the comparative example, the deviation between the aperture W1 at one surface where the small surface holes of the deposition mask are formed and the aperture W2 at the connected portion can exceed 1.1 μm.

[0209] Therefore, in OLED patterns formed using the deposition mask according to the comparative example, deposition failure may occur due to the shadowing effect.

[0210] The invention will be described in more detail below with reference to examples and comparative examples. These examples are merely for the purpose of describing the invention in more detail. Therefore, the invention is not limited thereto.

[0211] <Experimental Example 1: Measurement of W1-W2 values, small aperture curvature, and small aperture tilt angle>

[0212] When the height H1 between a surface of a deposition mask with small surface holes formed thereon and the connected portion is 3 μm, Table 1 shows the evaluation results of measurements of the deviation between the aperture W1 at the surface with small surface holes formed thereon and the diameter W2 at the connected portion, the curvature of the small aperture, and the tilt angle of the small aperture.

[0213] [Table 1]

[0214] Example 1 1.091 4.667 70° Example 2 0.084 6.0 75° Example 3 0.262 17.276 85° Example 4 0.052 85.961 89°

[0215] Reference Figures 12 to 15 To describe the shading effect of the examples and comparisons, and to refer to Figure 8 and Figure 9 To describe the difference between the tilt angles of the small surface holes according to the example and the comparative example.

[0216] Reference Figure 12 and Figure 13 This will describe the deposition pattern formed by the deposition mask according to the example.

[0217] Reference Figure 12 In the deposition mask according to the example, the height H1 between one surface of the deposition mask with small surface holes and the connected portion can be 3 μm or less. Therefore, the distance between one surface of the deposition mask and the substrate on which the deposition pattern is disposed can be very short, and thus deposition failure due to shading effect can be reduced.

[0218] Reference Figure 13 In the region between two adjacent patterns in the adjacent R, G, and B patterns, deposition failures that could occur due to placing different deposited materials in the same area are less likely to occur. That is, the R, G, and B patterns according to the example minimize shading phenomena caused by the diffusion of deposited material around the pattern. Therefore, in the deposition mask according to the example, the height of the small aperture can be 3 μm or less, thereby preventing OLED pixel deposition failures.

[0219] Additionally, refer to Figure 7 The tilt angle θ1 of the small aperture of the deposition mask in the example can be between 70 degrees and 89 degrees. Therefore, the deposition mask in the example can minimize deposition failure due to the shading effect.

[0220] Reference Figure 14 and Figure 15 To describe the deposition pattern formed by the deposition mask according to the comparative example.

[0221] Reference Figure 14 In the deposition mask according to the comparative example, the height H1 between one surface of the deposition mask with small surface holes and the connected portion can exceed 3 μm. Therefore, since the distance between one surface of the deposition mask and the substrate on which the deposition pattern is disposed is greater than the distance between one surface of the deposition mask and the substrate on which the deposition pattern is disposed in the example, deposition failure due to shading effect may increase.

[0222] Reference Figure 15 Deposition failures can occur in the region between two adjacent R, G, and B patterns, where different deposited materials are placed in the same area. That is, in the R, G, and B patterns according to the comparative example, a shadowing phenomenon may occur where the deposited material diffuses around the pattern. For example, in the comparative example, when the deposited material diffuses between the R and G patterns, an overlapping region SA may appear where the R pattern forming material and the G pattern forming material occupy the same area of ​​the substrate. Therefore, the structure of the deposition mask according to the comparative example can prevent OLED pixel deposition failures.

[0223] Additionally, refer to Figure 9 According to the comparative example, the tilt angle θ2 of the small aperture of the deposition mask can be less than 70 degrees. Therefore, according to the comparative example deposition mask, deposition failure may occur due to the shadowing effect.

[0224] This disclosure may also have the following configurations:

[0225] 1. A metal material deposition mask for OLED pixel deposition, the deposition mask comprising:

[0226] The depositional area used to form the depositional pattern and the non-depositional area other than the depositional area.

[0227] The deposition region includes multiple effective portions spaced apart in the longitudinal direction and ineffective portions other than the effective portions.

[0228] The effective portion includes:

[0229] Multiple small surface holes are formed on a surface;

[0230] Multiple large surface holes are formed on another surface opposite to the first surface;

[0231] A through hole connecting the small surface hole and the large surface hole; and

[0232] The island-like section between multiple through holes

[0233] The deposition mask has a resolution of 500 PPI or higher, the diameter of the vias is 33 μm or less, and the distance between the vias is 48 μm or less.

[0234] The inclination angle of the small surface hole relative to the surface is 70 to 89 degrees, and

[0235] The radius of curvature of the small surface hole relative to the surface is between 3 μm and 86 μm.

[0236] 2. The deposition mask according to Scheme 1, wherein the height of the small surface aperture relative to the surface is 3 μm or less.

[0237] 3. The deposition mask according to Scheme 1, wherein the difference between the diameter of the small surface hole and the diameter of the through hole in one surface of the deposition mask is 0.01 μm to 1.1 μm.

[0238] 4. The deposition mask according to Scheme 1, wherein the thickness of the invalid portion is 30 μm or less, and the maximum thickness of the island portion is 15 μm or less.

[0239] 5. The deposition mask according to Scheme 1, wherein the deposition mask comprises:

[0240] A resolution of 800 PPI or higher, wherein the diameter of the vias is 20 μm or less and the distance between the vias is 32 μm or less.

[0241] The inclination angle of the small surface hole relative to the surface is between 85 degrees and 89 degrees.

[0242] The radius of curvature of the small surface hole relative to the surface is between 17 μm and 86 μm, and

[0243] The thickness of the invalid portion is 20 μm or less.

[0244] 6. The deposition mask according to Scheme 1, wherein the deposition mask is used to deposit green pixels of an organic light-emitting display device.

[0245] 7. The deposition mask according to Scheme 1, wherein the width of the island-shaped portion is 2 μm or greater.

[0246] 8. The deposition mask according to Scheme 1, wherein the average deviation of the diameter of the via is ±3 μm.

[0247] 9. The deposition mask according to Scheme 1, wherein the diameter of the via is 15 μm to 33 μm.

[0248] 10. The deposition mask according to Scheme 1, wherein the distance between the vias is 20 μm to 48 μm.

[0249] 11. The deposition mask according to Scheme 2, wherein the height of the small surface aperture relative to the surface is 1.4 μm to 3 μm.

[0250] 12. The deposition mask according to Scheme 4, wherein the thickness of the invalid portion is 15 μm to 30 μm.

[0251] 13. The deposition mask according to Scheme 1, wherein the difference between the aperture of the small surface hole and the aperture of the through hole is 0.01 μm to 1.1 μm.

Claims

1. A metal mask for deposition, the metal mask comprising: Depositional areas and non-depositional areas The deposition area includes an effective portion and an ineffective portion. The effective portion includes multiple through holes. The through-hole includes: a small surface hole on one surface; a large surface hole on another surface opposite to the one surface; and a connecting portion where the inner surfaces of the small surface hole and the large surface hole intersect. Among them, island-shaped sections are arranged between multiple large surface holes. The tilt angle (θ1) of the connection between the small surface hole and one end of the connecting portion relative to one of the surfaces is between 70 degrees and 89 degrees. The inner surface of the small surface hole is concave towards the through hole. Wherein, the radius of curvature of the inner surface of the small surface hole relative to the one surface is between 3 μm and 86 μm, and Wherein, the second inclination angle (θ3) of the straight line connecting one end of the large surface hole on the other surface and the corresponding end of the connecting portion is smaller than the inclination angle (θ1).

2. The metal mask according to claim 1, wherein, The tilt angle (θ1) of the connection between the small surface hole and one end of the surface and the connecting portion is 70 to 75 degrees.

3. The metal mask according to claim 1, wherein, The tilt angle (θ1) of the connection between the small surface hole and one end of the surface and the connecting portion is 70 to 85 degrees.

4. The metal mask according to claim 1, wherein, The tilt angle (θ1) of the connection between the small surface hole and one end of the surface and the connecting portion is 75 degrees to 85 degrees.

5. The metal mask according to claim 1, wherein, The tilt angle (θ1) of the connection between the small surface hole and one end of the surface and the connecting portion is 75 degrees to 89 degrees.

6. The metal mask according to claim 1, wherein, The tilt angle (θ1) of the connection between the small surface hole and one end of the surface and the connecting portion is 85 to 89 degrees.

7. The metal mask according to claim 1, wherein, The inner surface of the small surface hole has a radius of curvature of 4.5 μm to 6.0 μm relative to the other surface.

8. The metal mask according to claim 1, wherein, The inner surface of the small surface hole has a radius of curvature of 4.5 μm to 17.0 μm relative to the other surface.

9. The metal mask according to claim 1, wherein, The inner surface of the small surface hole has a radius of curvature of 4.5 μm to 86 μm relative to the other surface.

10. The metal mask according to claim 1, wherein, The inner surface of the small surface hole has a radius of curvature of 6.0 μm to 17 μm relative to the other surface.

11. The metal mask according to claim 1, wherein, The inner surface of the small surface hole has a radius of curvature of 6.0 μm to 86 μm relative to the other surface.

12. The metal mask according to claim 1, wherein, The inner surface of the small surface hole has a radius of curvature of 17 μm to 86 μm relative to the other surface.

13. The metal mask according to claim 1, wherein, The height from the connected portion to one of the surfaces is 3 μm or less. The small surface hole has a diameter (W1) in the horizontal direction on one of its surfaces. The through hole has a width (W2) in at least one of the horizontal, vertical and diagonal directions on the communicating portion. Wherein, the aperture (W1) is larger than the width (W2) of the through hole. The difference between the aperture (W1) and the width (W2) of the through hole is 0.01 μm to 1.1 μm.

14. The metal mask according to claim 13, wherein, The difference between the aperture (W1) and the width (W2) of the through hole is 0.03 μm to 1.1 μm.

15. The metal mask according to claim 13, wherein, The difference between the aperture (W1) and the width (W2) of the through hole is 0.05 μm to 1.1 μm.

16. The metal mask according to claim 13, wherein, The width (W2) of the through hole on the connecting portion in at least one of the horizontal, vertical and diagonal directions is 33 μm or less.

17. The metal mask according to claim 16, wherein, The metal mask has a resolution of 500 PPI or higher, wherein the distance (P1) between the centers of a plurality of adjacent through holes along the horizontal direction is 48 μm or less.

18. The metal mask according to any one of claims 13 to 17, wherein, The width (W2) of the through hole on the communicating portion is defined in the horizontal direction, and the width (W2) of the through hole is 20 μm or less. The metal mask has a resolution of 800 PPI or higher, and the distance (P1) between the centers of a plurality of adjacent through holes along the horizontal direction is 32 μm or less.

19. The metal mask according to any one of claims 13 to 17, wherein, The average deviation of the width (W2) of each of the plurality of through holes on the connecting portion in at least one of the horizontal, vertical and diagonal directions is 2% to 10%.

20. The metal mask according to claim 19, wherein, The average deviation of the width (W2) of each of the plurality of through holes is ± 3 μm.

21. The metal mask according to claim 18, wherein, The distance (P1) between the centers of the plurality of adjacent through holes in the horizontal direction is 20 μm to 48 μm.

22. The metal mask according to claim 16, wherein, The width (W2) of the through hole on the connecting portion in at least one of the horizontal, vertical and diagonal directions is 15 μm to 33 μm.

23. The metal mask according to any one of claims 13 to 17, wherein, The height (H1) from the connected portion to one of the surfaces is 0.1 μm to 3 μm or less.

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