Structure for electrically conductive member, method for manufacturing structure, method for manufacturing bonded body, and method for manufacturing device

Abstract

Provided is a structure capable of suppressing electrification and further reducing the force required at the time of joining, a method for manufacturing the structure, a method for manufacturing a joined body, and a method for manufacturing a device. The structure has an insulating film and a plurality of conductors that penetrate the insulating film in the thickness direction and are disposed in an electrically insulated state from each other, the conductors protrude from at least one side surface in the thickness direction of the insulating film, and the structure has a resin layer that locally covers the surface of the insulating film from which the conductors protrude.

Description

Technical Field

[0001] The present invention relates to a structure, a method for manufacturing the structure, a method for manufacturing a connector, and a method for manufacturing a device, wherein a plurality of conductors, which are arranged in a state of electrical insulation from each other and extending through the thickness direction of an anodic oxide film, protrude from at least one side surface of the anodic oxide film, and the protruding surface of the conductors is partially covered by a resin layer. Background Technology

[0002] Structures formed by filling multiple through holes in an insulating substrate with conductive materials such as metals have become one of the most promising areas in nanotechnology in recent years, with applications such as anisotropic conductive components being highly anticipated.

[0003] Anisotropic conductive components achieve electrical connection between electronic components and circuit boards simply by inserting them between electronic components such as semiconductor elements and applying pressure. Therefore, they are widely used as electrical connection components for electronic components such as semiconductor elements and as connectors for functional testing.

[0004] In particular, the miniaturization of electronic components such as semiconductor devices is significant. In traditional methods such as direct connection to the wiring substrate via wire bonding, flip chip bonding, and thermocompression bonding, the stability of the electrical connection of electronic components cannot always be guaranteed. Therefore, anisotropic conductive components have attracted attention as electronic connection parts.

[0005] As an anisotropic conductive component, for example, Patent Document 1 describes an anisotropic conductive bonding component comprising an insulating substrate, a plurality of conductive paths formed by the conductive component, and a resin layer disposed on the entire surface of the insulating substrate. The resin layer contains a thermosetting resin. The conductive paths are disposed through the insulating substrate in the thickness direction in a state of insulation to each other. The conductive paths have protruding portions that protrude from the surface of the insulating substrate, the ends of which are embedded in the resin layer.

[0006] Previous technical documents

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent Application Publication No. 2018-37509 Summary of the Invention

[0009] The technical problem to be solved by the invention

[0010] As described in Patent Document 1 above, in a structure where the resin layer is disposed on the entire surface of an insulating substrate, the generated static electricity cannot be released. Therefore, when conveying anisotropic conductive components under charge, there are problems that are difficult to handle, such as the need for a conveyor arm.

[0011] Furthermore, in structures where the resin layer is disposed on the entire surface of an insulating substrate, when anisotropic conductive components are inserted between electronic components such as semiconductor elements and circuit boards and pressure bonding is performed, the remaining portion of the resin layer disposed on the entire surface needs to be removed from the bonding portion, which presents problems such as requiring a large force during pressure bonding.

[0012] The purpose of this invention is to provide a structure capable of suppressing charge and further reducing the force required for bonding, a method for manufacturing the structure, a method for manufacturing the bonding body, and a method for manufacturing the device.

[0013] means for solving technical problems

[0014] To achieve the above objectives, one aspect of the present invention provides a structure having an insulating film and a plurality of conductors disposed in a state of electrical insulation from each other, the conductors protruding from at least one side surface of the insulating film in the thickness direction, and the structure having a resin layer that partially covers the protruding surfaces of the conductors of the insulating film.

[0015] Preferably, the conductors protrude from both sides of the insulating film in the thickness direction, and the resin layer partially covers each surface of both sides of the insulating film in the thickness direction.

[0016] The average protrusion length of the conductor is preferably less than the average thickness of the resin layer.

[0017] When the area of ​​the insulating film covered by the resin layer is set as Sa, the area of ​​the insulating film without the resin layer is set as Sb, the average protrusion height of the conductor is set as Hd, and the average thickness of the resin layer is set as hm, it is preferable to satisfy 0.7≤(Sb×2 / 3×Hd) / (Sa×(hr-Hd))≤1.5.

[0018] The resin layer is preferably formed with a fine pattern.

[0019] The resin layers disposed on both sides of the insulating film in the thickness direction are preferably formed with the same pattern.

[0020] The insulating film is preferably composed of an anodic oxide film.

[0021] Another aspect of the present invention provides a method for manufacturing a structure, the method comprising: a step of filling an insulating film having a plurality of fine pores extending in the thickness direction with a conductive material to form a conductor; a protrusion step of causing the conductor to protrude from at least one side surface of the insulating film in the thickness direction; and a forming step of locally forming a resin layer on the protruding surface of the conductor of the insulating film.

[0022] The inkjet printing method is preferred for the resin layer formation process.

[0023] Preferably, the resin layer is formed on the entire surface of the conductor protrusion of the insulating film, and then the resin layer is partially removed.

[0024] Preferably, after forming the resin layer on the entire surface of the conductor protrusion of the insulating film, the resin layer formed at the ends of the insulating film is partially removed.

[0025] The conductor protrusion process is a process in which the conductor protrudes from both sides of the insulation film in the thickness direction. The resin layer formation process preferably forms the resin layer locally on each surface of both sides of the insulation film in the thickness direction.

[0026] The average protrusion length of the conductor is preferably less than the average thickness of the resin layer.

[0027] When the area of ​​the insulating film covered by the resin layer is set as Sa, the area of ​​the insulating film without the resin layer is set as Sb, the average protrusion height of the conductor is set as Hd, and the average thickness of the resin layer is set as hm, it is preferable to satisfy 0.7≤(Sb×2 / 3×Hd) / (Sa×(hr-Hd))≤1.5.

[0028] The preferred forming process involves forming resin layers with the same pattern on both sides of the insulating film in the thickness direction.

[0029] The insulating film is preferably composed of an anodic oxide film.

[0030] Another aspect of the present invention provides a method for manufacturing a joint, the method having a joining step, the joining step being to join a conductive component having a conductive portion and a structure having a conductive portion by bringing a conductor of the structure of the present invention into contact with a conductive portion having a conductive property.

[0031] Another aspect of the present invention provides a method for manufacturing a device, the method having a bonding step, which bonds a semiconductor element and a structure by contacting a conductor of the structure of the present invention with an electrode of a semiconductor element having electrodes.

[0032] Invention Effects

[0033] According to the present invention, it is possible to suppress charging and further reduce the force required for engagement.

[0034] Furthermore, according to the present invention, it is possible to obtain a structure that can suppress charging and further reduce the force required for engagement.

[0035] Furthermore, according to the present invention, it is possible to manufacture a joint by suppressing charging and further reducing the force required for joining.

[0036] Furthermore, according to the present invention, it is possible to manufacture a device by suppressing charging and further reducing the force required for engagement. Attached Figure Description

[0037] Figure 1 This is a schematic cross-sectional view illustrating an example of the structure of an embodiment of the present invention.

[0038] Figure 2 This is a schematic top view illustrating an example of the structure of an embodiment of the present invention.

[0039] Figure 3 This is a schematic top view showing a first example of a pattern of the resin layer of a structure according to an embodiment of the present invention.

[0040] Figure 4 This is a schematic top view of a second example showing the pattern of the resin layer of a structure according to an embodiment of the present invention.

[0041] Figure 5 This is a schematic top view of a third example showing the pattern of the resin layer of a structure according to an embodiment of the present invention.

[0042] Figure 6 This is a schematic top view illustrating an example of the fine pattern of the resin layer in a structure according to an embodiment of the present invention.

[0043] Figure 7 This is a schematic cross-sectional view of a step in an example of a method for manufacturing a structure according to an embodiment of the present invention.

[0044] Figure 8 This is a schematic cross-sectional view of a step in an example of a method for manufacturing a structure according to an embodiment of the present invention.

[0045] Figure 9 This is a schematic cross-sectional view of a step in an example of a method for manufacturing a structure according to an embodiment of the present invention.

[0046] Figure 10 This is a schematic cross-sectional view of a step in an example of a method for manufacturing a structure according to an embodiment of the present invention.

[0047] Figure 11 This is a schematic cross-sectional view of a step in an example of a method for manufacturing a structure according to an embodiment of the present invention.

[0048] Figure 12 This is a schematic cross-sectional view of a step in an example of a method for manufacturing a structure according to an embodiment of the present invention.

[0049] Figure 13 This is a schematic cross-sectional view of a step in an example of a method for manufacturing a structure according to an embodiment of the present invention.

[0050] Figure 14 This is a schematic diagram illustrating an example of a joint body according to an embodiment of the present invention.

[0051] Figure 15 This is a schematic diagram illustrating another example of a joint body according to an embodiment of the present invention.

[0052] Figure 16 This is a schematic cross-sectional view illustrating one step of a method for manufacturing a joint according to an embodiment of the present invention.

[0053] Figure 17 This is a schematic cross-sectional view illustrating one step of a method for manufacturing a joint according to an embodiment of the present invention.

[0054] Figure 18 This is a schematic diagram of a step in an example of a method for manufacturing a stacked device using a structure according to an embodiment of the present invention.

[0055] Figure 19 This is a schematic diagram of a step in an example of a method for manufacturing a stacked device using a structure according to an embodiment of the present invention.

[0056] Figure 20 This is a schematic diagram of a step in an example of a method for manufacturing a stacked device using a structure according to an embodiment of the present invention. Detailed Implementation

[0057] Hereinafter, with reference to the preferred embodiments shown in the accompanying drawings, the structure, the method for manufacturing the structure, the method for manufacturing the connector, and the method for manufacturing the device of the present invention will be described in detail.

[0058] Furthermore, the figures described below are illustrative of the present invention, and the present invention is not limited to the figures shown below.

[0059] Additionally, in the following text, the “~” indicating a numerical range includes the values ​​listed on either side. For example, ε a For the value α b ~ numerical value β c It refers to ε a The range includes the value α. b Sum of values ​​β c If we express the range of α using mathematical notation, then α b ≤εa ≤β c .

[0060] Regarding temperature and time, unless otherwise stated, they are included within the range of errors generally permissible in the relevant technical field.

[0061] [An example of a structure]

[0062] Figure 1 This is a schematic cross-sectional view illustrating an example of the detailed structure of an embodiment of the present invention. Figure 2 This is a schematic top view illustrating an example of the detailed structure of an embodiment of the present invention. Figure 2 From Figure 1 A top view of the surface side of the anodic oxide film, showing the state without resin layer 20.

[0063] Figure 1 The structure 10 shown includes: an insulating film 12 having electrical insulation properties; and a plurality of conductors 14 extending through the insulating film 12 along the thickness direction Dt and disposed in a state of electrical insulation from each other. The conductors 14 protrude from at least one surface of the insulating film 12 in the thickness direction Dt. In the case where the conductors 14 protrude from at least one surface of the insulating film 12 in the thickness direction Dt, it is preferable that in a structure where they protrude from only one surface, they protrude from either surface 12a or back surface 12b.

[0064] The structure 10 has a resin layer 20 that partially covers the protruding surface of the conductor 14 of the insulating film 12. That is, the resin layer 20 is not disposed on the entire surface 12a and the entire back surface 12b of the insulating film 12, but is only partially disposed on the surface 12a and the back surface 12b of the insulating film 12. The insulating film 12 is, for example, composed of an anodized film 15.

[0065] Multiple conductors 14 are disposed on an insulating film 12 in a state of electrical insulation from each other. For example, the insulating film 12 has multiple fine holes 13 extending along the thickness direction Dt. Conductors 14 are disposed in the multiple fine holes 13. The conductors 14 protrude from a surface 12a in the thickness direction Dt of the insulating film 12.

[0066] Furthermore, the conductor 14 protrudes from the back surface 12b in the thickness direction Dt of the insulating film 12. The structure has a resin layer 20 that partially covers the protruding surface of the conductor 14 of the insulating film 12.

[0067] The resin layer 20 has a resin layer portion 20a and a space 20b. The resin layer 20 has a resin layer portion 20a partially disposed on the surface 12a of the insulating film 12, separating the space 20b. The resin layer portion 20a covers the protrusion 14a of the conductor 14. The protrusion 14a is embedded in the resin layer portion 20a.

[0068] Furthermore, a resin layer 20a is partially disposed on the back surface 12b of the insulating film 12, with a space 20b separated therefrom, and the resin layer 20a covers the protrusion 14b of the conductor 14. The protrusion 14b is embedded in the resin layer 20a. The structure 10 has anisotropic conductivity, exhibiting conductivity in the thickness direction Dt, but its conductivity in the direction parallel to the surface 12a of the insulating film 12 is sufficiently low.

[0069] like Figure 2 As shown, for example, the shape of structure 10 is rectangular. However, the shape of structure 10 is not limited to rectangle; for example, it can be circular. The shape of structure 10 can be set to correspond to its purpose, ease of manufacture, etc.

[0070] By configuring the structure 10 as described above, with a resin layer 20 having a surface protruding from the conductor 14 partially covered by the insulating film 12, a space 20b exists within the resin layer 20, thus releasing the generated static electricity and suppressing charging. Consequently, charging is suppressed during the transport of the structure 10, resulting in better handling.

[0071] Furthermore, since the resin layer 20 is partially disposed on the surface of the insulating film 12, when the structure 10 is inserted between an electronic component such as a semiconductor element and a circuit board and pressure bonding is performed, the amount of resin layer 20 to be removed can be reduced, and a large force is not required during pressure bonding, thereby reducing the force required for bonding. Therefore, for example, it is possible to suppress the enlargement of the bonding device.

[0072] The following provides a more detailed explanation of the structure.

[0073] [Insulating film]

[0074] The insulating film 12 is provided to electrically insulate a plurality of conductors 14 made of conductive material from each other, and the insulating film has electrical insulation properties. Furthermore, the insulating film 12 has a plurality of fine pores 13 forming the conductors 14.

[0075] The insulating film can be formed, for example, from an inorganic material. Regarding the insulating film, for example, it is possible to use a material with a density of 10... 14 An insulating film with a resistivity of approximately Ω•cm.

[0076] Furthermore, the requirement that it is "formed from inorganic materials" is a stipulation used to distinguish it from polymeric materials. It specifies that inorganic materials are the main component (50% by mass or more), rather than limiting it to insulating substrates composed solely of inorganic materials. For example, as mentioned above, an insulating film may be composed of an anodic oxide film.

[0077] Furthermore, the insulating film can also be composed of, for example, metal oxides, metal nitrides, glass, silicon carbide, silicon nitride ceramics, carbon substrates such as diamond-like carbon, polyimide, and composite materials thereof. Alternatively, the insulating film can be, for example, an insulating film formed on an organic material having through pores by an inorganic material containing 50% by mass or more of ceramic or carbon material.

[0078] The length of the insulating film 12 in the thickness direction Dt, i.e., the thickness of the insulating film 12, is preferably in the range of 1 to 1000 μm, more preferably in the range of 5 to 500 μm, and even more preferably in the range of 10 to 300 μm. If the thickness of the insulating film 12 is within this range, the processability of the insulating film 12 becomes good.

[0079] From the viewpoint of ease of winding, the thickness ht of the insulating film 12 is preferably 30 μm or less, and more preferably 5 to 20 μm.

[0080] In addition, the thickness of the anodic oxide film is as follows: the anodic oxide film is machined in the thickness direction Dt by a focused ion beam (FIB), and a surface photograph (magnification of 50,000x) of its cross section is taken by a field emission scanning electron microscope (FE-SEM), and the value is calculated as the average value obtained by measuring 10 points.

[0081] The spacing between the conductors 14 in the insulating film 12 is preferably 5 nm to 800 nm, more preferably 10 nm to 200 nm, and even more preferably 20 nm to 60 nm. If the spacing between the conductors 14 in the insulating film 12 is within the above range, the insulating film 12 fully functions as a partition for the electrical insulation of the conductors 14.

[0082] The spacing between each conductor refers to the width between adjacent conductors, and is the average value obtained by observing the cross-section of structure 10 at 200,000x magnification using a field emission scanning electron microscope and measuring the width between adjacent conductors at 10 points.

[0083] <Average diameter of the pores>

[0084] The average diameter of the pore is preferably 1 μm or less, more preferably 5 to 500 nm, even more preferably 20 to 400 nm, even more preferably 40 to 200 nm, and most preferably 50 to 100 nm. The average diameter d of the pore 13 is 1 μm or less. If it is within the above range, a conductor 14 having the above average diameter can be obtained.

[0085] Regarding the average diameter of the pores 13, photographic images of the surface of the insulating film 12 were obtained by taking pictures from directly above at a magnification of 100 to 10,000 times using a scanning electron microscope. In the photographic images, at least 20 pores connected in a ring around each other were extracted, their diameters were measured and set as the opening diameters, and the average value of these opening diameters was calculated as the average diameter of the pores.

[0086] Furthermore, regarding magnification, a magnification within the aforementioned range can be appropriately selected to obtain an image capable of capturing more than 20 micropores. The opening diameter is determined by the maximum distance between the ends of the micropore portions. That is, the shape of the micropore opening is not limited to being approximately circular; therefore, when the opening shape is non-circular, the maximum distance between the ends of the micropore portions is set as the opening diameter. Thus, for example, even in the case of a micropore with a shape that integrates two or more micropores, it is considered as a single micropore, and the maximum distance between the ends of the micropore portions is set as the opening diameter.

[0087] 〔conductor〕

[0088] As described above, a plurality of conductors 14 are arranged on the anodic oxide film in a state of electrical insulation from each other.

[0089] Multiple conductors 14 are conductive. The conductors are made of a conductive material. The conductive material is not particularly limited, and metals can be cited as examples. Specific examples of metals include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), and nickel (Ni). From the viewpoint of conductivity, copper, gold, aluminum, and nickel are preferred, copper and gold are more preferred, and copper is the most preferred.

[0090] Besides metals, oxide conductive materials can also be cited. Examples of oxide conductive materials include indium-doped tin oxide (ITO). However, compared to oxide conductors, metals have superior ductility and are easily deformable, even under compression during bonding, so they are preferably made of metal.

[0091] Furthermore, for example, conductors can also be made from conductive resins containing nanoparticles, such as Cu or Ag.

[0092] The height H of the conductor 14 in the thickness direction Dt is preferably 10 to 300 μm, more preferably 20 to 30 μm.

[0093] <The Shape of the Conductor>

[0094] The average diameter d of conductor 14 is preferably less than 1 μm, more preferably 5 to 500 nm, even more preferably 20 to 400 nm, even more preferably 40 to 200 nm, and most preferably 50 to 100 nm.

[0095] The density of conductor 14 is preferably 20,000 / mm². 2 The above is preferred to be 2 million per mm. 2 The above is further optimized to 10 million / mm. 2 The above, especially preferred, is 50 million / mm. 2 The optimal value is 100 million pieces / mm. 2 above.

[0096] Furthermore, the center-to-center distance p between adjacent conductors 14 is preferably 20 nm to 500 nm, more preferably 40 nm to 200 nm, and even more preferably 50 nm to 140 nm.

[0097] Regarding the average diameter of the conductors, photographic images of the anodic oxide film surface were obtained by taking pictures from directly above at a magnification of 100 to 10,000 using a scanning electron microscope. From the photographic images, at least 20 conductors connected in a ring were selected, their diameters were measured and designated as the opening diameters, and the average of these opening diameters was calculated as the average diameter of the conductors.

[0098] Furthermore, regarding the magnification, a magnification within the aforementioned range can be appropriately selected to obtain photographic images capable of capturing images of 20 or more conductors. Also, the aperture diameter is determined by the maximum distance between the ends of the conductor portions. That is, the shape of the conductor aperture is not limited to being approximately circular; therefore, when the aperture shape is non-circular, the maximum distance between the ends of the conductor portions is set as the aperture diameter. Thus, for example, even in the case of a conductor with a shape that integrates two or more conductors, it is considered as a single conductor, and the maximum distance between the ends of the conductor portions is set as the aperture diameter.

[0099] <Prominent part>

[0100] The protrusion is part of the conductor and is cylindrical. From the viewpoint of increasing the contact area with the mating object, the protrusion is preferably cylindrical.

[0101] The average protrusion length ha of the protrusion 14a and the average length hb of the protrusion 14b are preferably 30 nm to 500 nm, and more preferably 100 nm or less, as the upper limit.

[0102] The average protrusion length ha of protrusion 14a and the average length hb of protrusion 14b are as follows: As described above, a cross-sectional image of the protrusion is obtained using a field emission scanning electron microscope, and the average value is obtained by measuring the height of the protrusion at 10 points based on the cross-sectional image.

[0103] [Resin layer]

[0104] As described above, a resin layer is partially disposed on at least one side of the surface of the anodic oxide film, for example, to embed the protrusion of a conductor. That is, the resin layer covers and protects the end of the conductor protruding from the anodic oxide film.

[0105] To achieve the above-mentioned functions, the resin layer preferably exhibits fluidity in a temperature range of 50°C to 200°C and cures at a temperature above 200°C. The resin layer will be described in detail later.

[0106] As described above, the resin layer has a structure having a resin layer portion 20a and a space 20b, and the resin layer portion 20a is provided in a patterned manner.

[0107] in, Figure 3 This is a schematic top view showing a first example of a pattern of the resin layer of a structure according to an embodiment of the present invention. Figure 4 This is a schematic top view of a second example showing the pattern of the resin layer of a structure according to an embodiment of the present invention. Figure 5 This is a schematic top view of a third example showing the pattern of the resin layer of a structure according to an embodiment of the present invention. Figure 6 This is a schematic top view illustrating an example of the fine pattern of the resin layer in a structure according to an embodiment of the present invention.

[0108] Figures 3-6 The diagram shows resin layers 20, 21, and 22 as viewed from the surface 12a side of the insulating film 12, with the conductor 14 omitted. This view from the surface 12a side of the insulating film 12 is also referred to as a top view. Figures 3-6 The X direction is shown to be orthogonal to the Y direction.

[0109] Regarding resin layer 20, for example, Figure 3 As shown, in top view, the resin layer 20a is rectangular, and the space 20b is also rectangular. Multiple rectangular resin layers 20a are arranged, spaced apart from the space 20b in the X direction. Resin layers 20a arranged adjacent to each other in the Y direction are also arranged adjacent to the space 20b, but the resin layers 20a are configured such that they do not directly contact the space 20b in the Y direction. Figure 3 The resin layer 20 shown has the same shape and size for both the resin layer portion 20a and the space 20b. In the resin layer 20, the area Sa of the insulating film covered by the resin layer and the area Sb of the insulating film without a resin layer are adjusted by the number of resin layer portions 20a and spaces 20b. Furthermore, when the area Rs of the insulating film covered by the resin layer is set to S, Sa / S is the coverage ratio γc of the resin layer. That is, Sa / S = γc.

[0110] And, for example, such as Figure 4As shown, in top view, the resin layers 20a are circular and arranged with spaces 20b between them. Figure 4 In the resin layer 20 shown, the area Sa of the insulating film covered by the resin layer is adjusted by adjusting the size and number of circular resin layer portions 20a in the region Rs of the insulating film covered by the resin layer, thereby adjusting the coverage ratio γc.

[0111] Not limited to the above. Figure 3 and Figure 4 The resin layer 20 shown, as a pattern of the resin layer, can also be as follows: Figure 5 The resin layer 21 shown, viewed from above, has a structure in which the space 20b is provided as an opening within the resin layer portion 20a. Figure 5 In the structure of the resin layer 21 shown, the area of ​​the resin layer portion 20a as viewed from above can be adjusted by the size and number of spaces 20b in the region Rs of the insulating film covered by the resin layer. This allows for adjustment of the coverage ratio γc.

[0112] Furthermore, the shape of the resin layer 20a is not limited to the aforementioned rectangle and circle. Also, the pattern of the resin layer 20 can be a concentric circle pattern.

[0113] In the resin layer 20, in order to improve the coverage γc, it is not simply necessary to reduce the area of ​​the insulating film without a resin layer, i.e., the total area of ​​the space, but rather to preferably reduce the pattern itself, i.e. the resin layer portion, and the space of the pattern.

[0114] The resin layer 20 may have a fine pattern. By making the resin layer 20 a fine pattern, the space 20b becomes smaller, and the flow distance of the resin layer portion during bonding is shortened, which is therefore preferable. Herein, a fine pattern refers to a pattern in the resin layer portion that is small and has a narrow space.

[0115] As a micro-pattern, for example, there exists a pattern in which the area of ​​each space is smaller than the area of ​​the resin layer and the space is arranged on at least a portion around the resin layer.

[0116] by Figure 6 For example, let's explain the fine patterns in more detail. About Figure 6 The resin layer 22 shown has a space 22b between adjacent resin layer portions 22a, with the space 22b existing on at least a portion of the resin layer portion 22a. The size of the space 22b in the resin layer 22 is smaller than the size of the resin layer portion 22a. That is, the area of ​​the space 22b is smaller than that of the resin layer portion 22a.

[0117] Furthermore, the size of the resin layer portion 22a of the resin layer 22 is smaller than that described above. Figure 3The size of the resin layer portion 20a of the resin layer 20 shown is smaller than the size of the space 22b.

[0118] The area of ​​the resin layer portion 22a in top view can be adjusted by the size and number of resin layer portions 22a in the region Rs of the insulating film covered by the resin layer, and the size and number of spaces 22b, thereby adjusting the coverage ratio γc.

[0119] Since the resin layer portion 22a with its fine pattern is small and the space 22b is also small, it is preferable to use a fabrication method such as inkjet printing to directly fabricate the resin layer 22. By directly forming the resin layer 22 without the need for exposure processes such as photolithography, the resin layer can be easily formed.

[0120] The resin layer 22a is not limited to a rectangle; as mentioned above, it can be circular.

[0121] The sizes of the resin layers 20a and 22a and the spaces 20b and 22b are preferably 20 to 200 μm. If the sizes of the resin layers 20a and 22a and the spaces 20b and 22b are 20 to 200 μm, the resin layers 20a and 22a and the spaces 20b and 22b can be manufactured efficiently.

[0122] In addition, regarding the size of resin layers 20a and 22a and spaces 20b and 22b, if they are polygons such as triangles and squares when viewed from above, they are the diameters of the circumcircles; if they are circles when viewed from above, they are the diameters.

[0123] The average protruding lengths ha and hb of conductor 14 are preferably less than the average thickness hm of resin layer 20. If the average protruding length ha of protrusion 14a and the average length hb of protrusion 14b of conductor 14 are both less than the average thickness hm of resin layer 20, then protrusions 14a and 14b are both embedded in resin layer portion 20a of resin layer 20, and conductor 14 is protected by resin layer 20.

[0124] The average thickness hm of the resin layer 20 is the average distance from the surface 12a of the insulating film 12 or the average distance from the back surface 12b of the insulating film 12. The average thickness hm of the resin layer 20 is calculated as follows: the resin layer is cut along the thickness direction Dt of the structure 10, and the cross-section of the cut section is observed using a field emission scanning electron microscope (FE-SEM). The average value of 10 measurements taken at points 10 corresponding to the resin layer and the distance from the surface 12a of the insulating film 12 is also calculated. Furthermore, the average value of 10 measurements taken at points 10 corresponding to the resin layer and the distance from the back surface 12b of the insulating film 12 is also calculated.

[0125] The average thickness of the resin layer is preferably 200 to 1000 nm, more preferably 400 to 600 nm. If the average thickness of the resin layer is 200 to 1000 nm as described above, the effect of protecting the protrusion of the conductor 14 can be fully realized.

[0126] Furthermore, in the resin layer 20 (reference) Figure 1 ) covering insulating film 12 (reference) Figure 1 Let the area be Sa, and let 20 (without a resin layer) be used as a reference. Figure 1 Insulating film 12 (reference) Figure 1 When the area of ​​the resin layer 20 is set as Sb, the average protrusion height of the conductor 14 is set as Hd (nm), and the average thickness of the resin layer 20 is set as hm (nm), it is preferable to satisfy 0.7≤(Sb×2 / 3×Hd) / (Sa×(hr-Hd))≤1.5. The total area of ​​the resin layer is the area Sa of the insulating film covered by the resin layer, and the total area of ​​the space is the area Sb of the insulating film without the resin layer.

[0127] As described above, if (Sb×2 / 3×Hd) / (Sa×(hr-Hd)) is in the range of 0.7 to 1.5, then half of the total area of ​​the insulating film 12 is covered by the resin layer 20. Resin layer portion 20a (reference) Figure 1 When joining structure 10, it moves to the portion of space 20b not covered by resin layer 20 in a state that can suppress charging and further reduce the force required for joining (see reference). Figure 1 ), thus the surface 12a of the insulating film 12 (reference) Figure 1 ), back 12b (reference) Figure 1 The entire area is covered by resin layer 20.

[0128] Sb×2 / 3×Hd corresponds to the volume of the uncoated portion on the insulating film 12 where no resin layer is provided. Furthermore, Sb×2 / 3 is the ratio of the total area obtained based on the total area of ​​all the pores 13 formed on the surface 12a of the insulating film 12 to the surface 12a of the insulating film 12, which is approximately 66%.

[0129] Sa×(hr-Hd) corresponds to the volume of the resin layer portion on the insulating film 12 where the resin layer portion is provided.

[0130] From resin layer 20 (reference) Figure 1 ) covering insulating film 12 (reference) Figure 1 The area Sa is the resin layer portion 20a provided when the insulating film 12 is viewed from above (reference). Figure 1 The area of ​​).

[0131] No resin layer 20 (reference) Figure 1 Insulating film 12 (reference) Figure 1The area Sb is the portion 20a without a resin layer when viewed from above the insulating film 12 (reference). Figure 1 The area of ​​space 20b (reference) Figure 1 The area of ​​).

[0132] Both areas Sa and Sb are captured from the surface 12a side of the insulating film 12. In the captured images, the resin layer 20a and the space 20b are identified by image analysis. The areas Sa and Sb are obtained by calculating the areas of the identified resin layer 20a and space 20b, respectively.

[0133] The average protrusion height Hd of conductor 14 is equal to the average protrusion length ha or the average protrusion length hb mentioned above.

[0134] In addition, 0.7≤(Sb×2 / 3×Hd) / (Sa×(hr-Hd))≤1.5 is preferably applicable to one side of the insulating film, that is, to each surface of surface 12a or back side 12b.

[0135] Furthermore, the above (Sb×2 / 3×Hd) / (Sa×(hr-Hd)) can also be expressed using the above-mentioned coverage ratio γc as follows.

[0136] [Formula 1]

[0137]

[0138] Furthermore, the resin layers 20 disposed on both sides of the insulating film 12 in the thickness direction Dt can be formed with the same pattern. That is, in plan view, the resin layers 20 disposed on both sides can have the same pattern. If the patterns of the resin layers 20 in the surface 12a and the back surface 12b of the insulating film 12 are the same, it is difficult to apply a bias load during bonding, which is therefore preferable. Moreover, if the patterns of the resin layers 20 in the surface 12a and the back surface 12b of the insulating film 12 are the same, at least one end of the conductor is not covered, so it is easy to fully release static electricity, thereby suppressing charging.

[0139] Furthermore, the identical patterns of the resin layers 20 on both sides of the insulating film 12 in the thickness direction Dt means that the resin layer portion 20a and the space 20b of the resin layer 20 have the same shape and size.

[0140] Furthermore, it is preferable that the patterns of the resin layers 20 on both sides of the insulating film 12 in the thickness direction Dt are arranged in the same position. The same arrangement position means that the positions are the same when viewed from above, and the patterns of the resin layers 20 on the surface 12a of the insulating film 12 overlap with the patterns of the resin layers 20 on the back surface 12b of the insulating film 12 when the insulating film 12 is not in use.

[0141] In addition, regarding the size of each part of the structure 10, unless otherwise stated, it is the average value obtained by cutting the structure 10 along the thickness direction Dt, observing the cross section of the cut section using a field emission scanning electron microscope (FE-SEM), and measuring the parts corresponding to each size at 10 points.

[0142] [An example of a method for manufacturing a structure]

[0143] Figures 7-13 This is a schematic cross-sectional view illustrating an example of a manufacturing method for a structure according to an embodiment of the present invention, arranged in the order of process steps. Additionally, in Figures 7-13 In the middle, to and Figure 1 and Figure 2 Components with the same structure are labeled with the same symbol, and their detailed descriptions are omitted.

[0144] In one example of a method for manufacturing a structure, Figure 1 In the structure 10 shown, the insulating film 12 is described as being made of an anodized aluminum film. An aluminum substrate is used to form the anodized aluminum film. Therefore, in one example of the manufacturing method of the structure, firstly, as... Figure 7 As shown, prepare an aluminum substrate 30.

[0145] The aluminum substrate 30 is based on the final obtained structure 10 (reference). Figure 1 The size and thickness of the insulating film 12 are appropriately determined by factors such as the thickness and processing equipment. The aluminum substrate 30 is, for example, a rectangular plate. However, it is not limited to an aluminum substrate; a metal substrate capable of forming an electrically insulating insulating film 12 can be used.

[0146] Next, the surface 30a on one side of the aluminum substrate 30 (refer to...) Figure 7 The aluminum substrate 30 undergoes anodizing treatment. As a result, one side surface 30a (refer to...) of the aluminum substrate 30 is anodized. Figure 7 ) is anodized, thus as Figure 8 The insulating film 12 shown is an anodized film 15 having a plurality of fine holes 13 extending along the thickness direction Dt of the aluminum substrate 30. A barrier layer 31 is present at the bottom of each fine hole 13. The above-described anodizing process is called the anodizing treatment process.

[0147] In the insulating film 12 having multiple pores 13, as described above, a barrier layer 31 is present at the bottom of each pore 13, but the removal Figure 8 The barrier layer 31 is shown. Thus, an insulating film 12 having a plurality of fine pores 13 without the barrier layer 31 is obtained (see reference). Figure 9 Furthermore, the process of removing the aforementioned barrier layer 31 is referred to as the barrier layer removal process.

[0148] In the barrier layer removal process, an alkaline aqueous solution containing ions of metal M1 with a hydrogen overvoltage higher than that of aluminum is used to remove the barrier layer 31 of the insulating film 12 while simultaneously removing ions from the bottom 32c of the fine pores 13 (see reference). Figure 9 ) surface 32d (reference) Figure 9 A metal layer 35a (reference) is formed on the surface of a metal (metal M1). Figure 9 Therefore, the aluminum substrate 30 exposed in the fine hole 13 is covered by a metal layer 35a. As a result, when filling the fine hole 13 with metal by electroplating, electroplating is easy to perform, and the incomplete filling of the fine hole with metal is suppressed, thereby suppressing poor formation of the conductor 14.

[0149] In addition, the alkaline aqueous solution containing the ions of the aforementioned metal M1 may also contain aluminum ion-containing compounds (sodium aluminate, aluminum hydroxide, aluminum oxide, etc.). The content of the aluminum ion-containing compound, converted into the amount of aluminum ions, is preferably 0.1 to 20 g / L, more preferably 0.3 to 12 g / L, and even more preferably 0.5 to 6 g / L.

[0150] Next, electroplating is performed on the surface 12a of the insulating film 12 having a plurality of fine holes 13 extending along the thickness direction Dt. At this time, a metal layer 35a can be used as the electrode for electroplating. Metal 35b is used during electroplating to form at the bottom 32c of the fine holes 13 (see reference). Figure 9 ) surface 32d (reference) Figure 9 Electroplating begins with the metal layer 35a on the substrate. Thus, as... Figure 10 As shown, the interior of the fine pores 13 of the insulating film 12 is filled with metal 35b, which constitutes the conductor 14. A conductive conductor 14 is formed by filling the interior of the fine pores 13 with metal 35b. Additionally, metal 35 is referred to as the metal layer 35a and metal 35b that are filled together.

[0151] The process of filling the pores 13 of the insulating film 12 with metal 35b is called the metal filling process. As mentioned above, the conductor 14 is not limited to being made of metal, and a conductive material can be used. Electroplating can be used in the metal filling process, which will be described in detail later. In addition, the surface 12a of the insulating film 12 corresponds to one side surface of the insulating film 12.

[0152] After the metal filling process, such as Figure 11As shown, after the metal filling process, a portion of the surface 12a of the insulating film 12 on the side without the aluminum substrate 30 is removed along the thickness direction Dt, so that the metal 35 filled in the metal filling process protrudes more than the surface 12a of the insulating film 12. That is, the conductor 14 protrudes more than the surface 12a of the insulating film 12. Thus, a protrusion 14a is obtained. The process of making the conductor 14 protrude more than the surface 12a of the insulating film 12 is called the surface metal protrusion process.

[0153] After the surface metal protrusion process, such as Figure 12 As shown, aluminum substrate 30 is removed. The process of removing aluminum substrate 30 is called substrate removal process.

[0154] Next, as Figure 13 As shown, after the substrate removal process, a portion of the surface of the insulating film 12 on the side where the aluminum substrate 30 is disposed, i.e., the back surface 12b, is removed along the thickness direction Dt, so that the metal 35, i.e. the conductor 14, filled in the metal filling process, protrudes more than the back surface 12b of the insulating film 12. This results in the protrusion 14b.

[0155] The aforementioned surface metal protrusion process and back metal protrusion process can be implemented in a manner that includes both processes, or in a manner that includes only one of the surface metal protrusion process and back metal protrusion process. The surface metal protrusion process and back metal protrusion process correspond to "protrusion processes," and both the surface metal protrusion process and the back metal protrusion process are protrusion processes.

[0156] like Figure 13 As shown, conductor 14 protrudes from the surface 12a and back surface 12b of insulating film 12, and has protrusions 14a and 14b.

[0157] Next, a resin layer 20 is locally formed on the protruding surface 12a and back surface 12b of the conductor 14 of the insulating film 12 (see reference). Figure 1 Therefore, it is possible to obtain Figure 1 The structure 10 shown. Furthermore, the resin layer 20 can be, for example, the one described above. Figure 3 or Figure 4 The pattern shown is described below. The process for forming the resin layer 20 will be explained later.

[0158] Furthermore, in order to prevent the conductor 14 from protruding from the back surface 12b of the insulating film 12, the resin layer 20 is... Figure 12 The state shown is formed on the surface 12a of the insulating film 12, thereby obtaining the structure 10.

[0159] In the aforementioned barrier layer removal process, the barrier layer is removed by using an alkaline aqueous solution containing ions of metal M1, which has a higher hydrogen overvoltage than aluminum. This not only removes the barrier layer 31 but also forms a metal layer 35a of metal M1, which is less prone to generating hydrogen than aluminum, on the aluminum substrate 30 exposed at the bottom of the fine holes 13. As a result, the in-plane uniformity of the metal filling becomes excellent. This is believed to be because the generation of hydrogen caused by the plating solution is suppressed, thus facilitating metal filling via electroplating.

[0160] Furthermore, in the barrier layer removal process, a holding process is provided, in which a voltage selected from a range less than 30% of the voltage in the anodizing process (holding voltage) is maintained for a total of 5 minutes or more. It has been found that by combining an alkaline aqueous solution containing ions of metal M1, the uniformity of metal filling during electroplating is significantly improved. Therefore, having a holding process is preferable.

[0161] Although the detailed mechanism is not yet clear, it is believed that this is because, in the barrier layer removal process, a layer of metal M1 is formed under the barrier layer by using an alkaline aqueous solution containing metal M1 ions, thereby suppressing damage to the interface between the aluminum substrate and the anodic oxide film and improving the uniformity of the barrier layer dissolution.

[0162] In addition, during the barrier layer removal process, a metal layer 35a made of metal (metal M1) is formed at the bottom of the fine hole 13, but it is not limited to this. Only the barrier layer 31 is removed to expose the aluminum substrate 30 at the bottom of the fine hole 13. With the aluminum substrate 30 exposed, it can be used as an electrode for electrolytic plating.

[0163] [Anodic oxide film]

[0164] As described above, considering reasons such as forming fine pores with a desired average diameter and facilitating the formation of conductors, anodized films, for example, can be made of aluminum. However, it is not limited to aluminum anodized films; anodized films of valve metals can also be used. Therefore, valve metals can be used as metal substrates.

[0165] Specifically, aluminum can be used as a valve metal, as mentioned above. Other materials include tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, and antimony. Among these, aluminum anodized film is preferred from the viewpoint of good dimensional stability and relatively low cost. Therefore, it is preferable to use an aluminum substrate to manufacture the structure.

[0166] The thickness of the anodic oxide film is the same as the thickness ht of the insulating film 12 mentioned above.

[0167] [Metal substrate]

[0168] The metal substrate is used in the manufacture of the structure and is a substrate for forming an anodized film. For example, as described above, the metal substrate can be a metal substrate capable of forming an anodized film, and a substrate made of the aforementioned valve metal can be used. For example, as described above, considering reasons such as the ease of forming an anodized film, an aluminum substrate can be used as the metal substrate.

[0169] [Aluminum substrate]

[0170] There is no particular limitation on the aluminum substrate used to form the insulating film 12. Specific examples include pure aluminum plates; alloy plates with aluminum as the main component and containing trace amounts of impurity elements; substrates on which high-purity aluminum is deposited by vapor deposition on low-purity aluminum (e.g., recycled materials); substrates on which high-purity aluminum is coated on the surface of silicon wafers, quartz, glass, etc. by methods such as vapor deposition and sputtering; resin substrates obtained by laminating aluminum; and so on.

[0171] In the aluminum substrate, the aluminum purity of one side of the surface on which the anodic oxide film is formed by anodizing is preferably 99.5% by mass or more, more preferably 99.9% by mass or more, and even more preferably 99.99% by mass or more. If the aluminum purity is within the above range, the regularity of the micropore arrangement becomes sufficient.

[0172] There are no particular limitations on aluminum substrates, as long as an anodized film can be formed; for example, JIS (Japanese Industrial Standards) 1050 material can be used.

[0173] For the surface of the aluminum substrate that is anodized, it is preferable to pre-treat it with heat treatment, degreasing treatment and mirror finishing.

[0174] Among them, the heat treatment, degreasing treatment and mirror finishing treatment can be performed in the same way as those described in paragraphs

[0044] to

[0054] of Japanese Patent Application Publication No. 2008-270158.

[0175] The mirror finishing process prior to anodizing is, for example, electropolishing, which can be performed using an electropolishing solution containing phosphoric acid.

[0176] [Anodizing process]

[0177] Anodizing can be performed using previously known methods, but from the viewpoint of improving the regularity of the micropore arrangement and ensuring the anisotropic conductivity of the structure, self-ordering or constant voltage treatment is preferred.

[0178] Among them, the self-ordering method and constant pressure treatment of the anodizing process can be implemented in accordance with the

[0056] to

[0108] sections of Japanese Patent Application Publication No. 2008-270158 and [ Figure 3 The treatments described in the document are the same.

[0179] [Maintaining process]

[0180] The manufacturing method of the structure may include a holding process. The holding process is a process in which, after the aforementioned anodizing treatment process, the structure is held at a voltage selected from a range of 1V or higher and less than 30% of the voltage in the aforementioned anodizing treatment process, at a voltage of 95% to 105% or higher, for a total of 5 minutes or more. In other words, the holding process is a process in which, after the aforementioned anodizing treatment process, an electrolytic treatment is performed at a voltage selected from a range of 1V or higher and less than 30% of the voltage in the aforementioned anodizing treatment process, at a voltage of 95% to 105% or higher, for a total of 5 minutes or more.

[0181] The “voltage during anodizing” refers to the voltage applied between the aluminum and the counter electrode. For example, if the electrolysis time for anodizing is 30 minutes, it refers to the average voltage maintained over those 30 minutes.

[0182] From the viewpoint of controlling the thickness of the barrier layer to an appropriate thickness relative to the sidewall thickness of the anodic oxide film, i.e., the depth of the pores, it is preferable to maintain the voltage in the process at 5% or more and 25% or less of the voltage in the anodizing process, more preferably at 5% or more and 20% or less.

[0183] Furthermore, from the perspective of further improving in-plane uniformity, it is preferable that the total holding time in the holding process is 5 minutes or more and 20 minutes or less, more preferably 5 minutes or more and 15 minutes or less, and even more preferably 5 minutes or more and 10 minutes or less.

[0184] Furthermore, the holding time in the holding process only needs to be a total of 5 minutes or more, but it is preferred to hold it continuously for more than 5 minutes.

[0185] Furthermore, the voltage in the holding process can be set to decrease continuously or in stages from the voltage in the anodizing process to the voltage in the holding process. However, for the sake of further improving in-plane uniformity, it is preferable to set the voltage to 95% or more and 105% or less of the aforementioned holding voltage within 1 second after the anodizing process ends.

[0186] For example, by lowering the electrolysis potential at the end of the above-mentioned anodizing process, the holding process can also be carried out continuously with the above-mentioned anodizing process.

[0187] For conditions other than electrolysis potential, the above-mentioned holding process can use the same electrolyte and processing conditions as the previously known anodizing treatment.

[0188] In particular, when the holding process and the anodizing process are carried out consecutively, it is preferable to use the same electrolyte for treatment.

[0189] In an anodic oxide film having multiple micropores, as described above, a barrier layer (not shown) is present at the bottom of the micropores. A barrier layer removal process is included to remove this barrier layer.

[0190] [Barrier layer removal process]

[0191] The barrier layer removal process is, for example, a process of removing the barrier layer of an anodic oxide film using an alkaline aqueous solution containing ions of a metal M1 with a hydrogen overvoltage higher than that of aluminum.

[0192] The barrier layer is removed by the above-mentioned barrier layer removal process, and a conductive layer made of metal M1 is formed at the bottom of the micropore.

[0193] The hydrogen overvoltage refers to the voltage required to produce hydrogen. For example, the hydrogen overvoltage of aluminum (Al) is -1.66V (Journal of the Japanese Chemical Society, 1982, (8), pp. 1305-1313). In addition, examples of metals M1 with a higher hydrogen overvoltage than aluminum and their hydrogen overvoltage values ​​are shown below.

[0194] <Metal M1 and Hydrogen (1N H2SO4) Overvoltage>

[0195] • Platinum (Pt): 0.00V

[0196] • Gold (Au): 0.02V

[0197] • Silver (Ag): 0.08V

[0198] • Nickel (Ni): 0.21V

[0199] • Copper (Cu): 0.23V

[0200] Tin (Sn): 0.53V

[0201] • Zinc (Zn): 0.70V

[0202] Fine pores 13 can also be formed by expanding the diameter of micropores and removing the blocking layer. At this time, a pore widening treatment can be used to expand the diameter of the micropores. The pore widening treatment is a process that expands the pore size of the micropores by immersing the anodic oxide film in an acidic or alkaline aqueous solution to dissolve the anodic oxide film. In the pore widening treatment, aqueous solutions of inorganic acids such as sulfuric acid, phosphoric acid, nitric acid, and hydrochloric acid, or mixtures thereof, or aqueous solutions of sodium hydroxide, potassium hydroxide, and lithium hydroxide can be used.

[0203] In addition, the pore enlargement process can also remove the barrier layer at the bottom of the micropores by using an aqueous sodium hydroxide solution to enlarge the micropores and remove the barrier layer.

[0204] [Metal filling process]

[0205] <Metals used in the metal filling process>

[0206] In the metal filling process, the metal used to fill the interior of the fine holes 13 as a conductor in order to form a conductor, and the metal constituting the metal layer, preferably have a resistivity of 10. 3 Materials with an Ω•cm or less. Specific examples of the aforementioned metals may preferably include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), and zinc (Zn).

[0207] Furthermore, from the viewpoint of conductivity and formation based on electroplating, copper (Cu), gold (Au), aluminum (Al), and nickel (Ni) are preferred as conductors, copper (Cu) and gold (Au) are even more preferred, and copper (Cu) is even more preferred.

[0208] <Electroplating Method>

[0209] As an electroplating method for filling the interior of fine pores with metal, electrolytic electroplating or electroless electroplating can be used, for example.

[0210] In conventional electroplating methods used for coloring, it is difficult to selectively deposit (grow) metal in the pores with a high aspect ratio. This is believed to be because the deposited metal is consumed within the pores, and even after electrolysis for a certain period of time, the plating will not grow.

[0211] Therefore, when filling metals using electroplating, a stop time needs to be set during pulse electrolysis or constant potential electrolysis. The stop time needs to be at least 10 seconds, preferably 30 to 60 seconds.

[0212] Furthermore, ultrasonic waves are preferably applied to promote the stirring of the electrolyte.

[0213] Furthermore, the electrolysis voltage is typically 20V or less, preferably 10V or less; however, the deposition potential of the target metal in the electrolyte is measured beforehand, and constant potential electrolysis is preferably performed within +1V of that potential. Additionally, when performing constant potential electrolysis, it is preferable to simultaneously use cyclic voltammetry, and constant potential devices from Solartron, BAS Co., Ltd., HOKUTO DENKO CORPORATION, IVIUM, etc., can be used.

[0214] (Electroplating solution)

[0215] The electroplating solution can use previously known electroplating solutions.

[0216] Specifically, when copper is deposited, an aqueous solution of copper sulfate is typically used, but the concentration of copper sulfate is preferably 1–300 g / L, more preferably 100–200 g / L. Furthermore, adding hydrochloric acid to the electrolyte can promote deposition. In this case, the concentration of hydrochloric acid is preferably 10–20 g / L.

[0217] Furthermore, when gold is deposited, it is preferable to use a sulfuric acid solution of gold tetrachloride and perform electroplating by alternating current electrolysis.

[0218] The electroplating solution preferably contains a surfactant.

[0219] As a surfactant, known substances can be used. Sodium lauryl sulfate, a surfactant traditionally added to electroplating solutions, can also be used directly. For the hydrophilic portion, either ionic (cationic / anionic / amphoteric) or nonionic (nonionic) substances can be used; however, from the viewpoint of avoiding the generation of bubbles on the surface of the object to be electroplated, cationic surfactants are preferred. The concentration of the surfactant in the electroplating solution is preferably 1% by mass or less.

[0220] In addition, in electroless electroplating, it takes a long time to completely fill the pores formed by fine holes with high aspect ratios with metal, so it is preferable to use electroplating to fill the pores with metal.

[0221] [Substrate Removal Process]

[0222] The substrate removal process is the process of removing the aluminum substrate after the metal filling process. There are no particular limitations on the method for removing the aluminum substrate; for example, a method of removal by dissolution is preferably used.

[0223] <Dissolution of Aluminum Substrate>

[0224] The aluminum substrate described above is preferably dissolved using a treatment solution that is difficult to dissolve anodic oxide film but easy to dissolve aluminum.

[0225] The dissolution rate of this treatment solution for aluminum is preferably 1 μm / min or more, more preferably 3 μm / min or more, and even more preferably 5 μm / min or more. Similarly, the dissolution rate for the anodic oxide film is preferably 0.1 nm / min or less, more preferably 0.05 nm / min or less, and even more preferably 0.01 nm / min or less.

[0226] Specifically, the treatment solution preferably contains at least one metal compound with an ionization tendency lower than that of aluminum and has a pH (hydrogen ion index) of 4 or less or 8 or more, more preferably has a pH of 3 or less or 9 or more, and even more preferably has a pH of 2 or less or 10 or more.

[0227] As a treatment solution for dissolving aluminum, it is based on an acidic or alkaline aqueous solution and preferably contains, for example, compounds of manganese, zinc, chromium, iron, cadmium, cobalt, nickel, tin, lead, antimony, bismuth, copper, mercury, silver, palladium, platinum, gold (e.g., platinum chloride), their fluorides, their chlorides, etc.

[0228] The preferred substrate is an acidic aqueous solution, and the preferred substrate is the addition of chlorides.

[0229] In particular, from the viewpoint of handling tolerance, a treatment solution containing mercuric chloride mixed in hydrochloric acid aqueous solution (hydrochloric acid / mercuric chloride) or a treatment solution containing copper chloride mixed in hydrochloric acid aqueous solution (hydrochloric acid / copper chloride) is preferred.

[0230] Furthermore, there are no particular limitations on the composition of the aluminum dissolving solution; for example, a bromine / methanol mixture, a bromine / ethanol mixture, and aqua regia can be used.

[0231] Furthermore, the acid or alkali concentration of the aluminum dissolving solution is preferably 0.01 to 10 mol / L, more preferably 0.05 to 5 mol / L.

[0232] Furthermore, the processing temperature of the aluminum-dissolving solution is preferably -10℃ to 80℃, and more preferably 0℃ to 60℃.

[0233] Furthermore, the dissolution of the aluminum substrate is achieved by contacting the aluminum substrate after the electroplating process with the aforementioned treatment solution. The contact method is not particularly limited; examples include immersion and spraying. Immersion is preferred. The contact time is preferably 10 seconds to 5 hours, more preferably 1 minute to 3 hours.

[0234] Additionally, a support can be provided on the insulating film 12, for example. The support is preferably of the same shape as the insulating film 12. Installing a support improves processability.

[0235] [Key Processes]

[0236] To remove a portion of the insulating film 12, an acidic or alkaline aqueous solution can be used, for example, to dissolve the insulating film 12 (alumina, Al2O3) without dissolving the metal constituting the conductor 14. A portion of the insulating film 12 is removed by contacting the acidic or alkaline aqueous solution with the insulating film 12, which has fine pores 13 filled with metal. The method of contacting the acidic or alkaline aqueous solution with the insulating film 12 is not particularly limited; examples include impregnation and spraying. Impregnation is preferred.

[0237] When using an aqueous acid solution, it is preferable to use an aqueous solution of an inorganic acid such as sulfuric acid, phosphoric acid, nitric acid, or hydrochloric acid, or a mixture thereof. From the viewpoint of superior safety, an aqueous solution free of chromic acid is preferred. The concentration of the aqueous acid solution is preferably 1 to 10% by mass. The temperature of the aqueous acid solution is preferably 25 to 60°C.

[0238] Furthermore, when using an alkaline aqueous solution, it is preferable to use an aqueous solution of at least one alkali selected from the group consisting of sodium hydroxide, potassium hydroxide, and lithium hydroxide. The concentration of the alkaline aqueous solution is preferably 0.1% to 5% by mass. The temperature of the alkaline aqueous solution is preferably 20 to 35°C.

[0239] Specifically, for example, a 50 g / L, 40°C aqueous solution of phosphoric acid, a 0.5 g / L, 30°C aqueous solution of sodium hydroxide, or a 0.5 g / L, 30°C aqueous solution of potassium hydroxide can be preferably used.

[0240] The immersion time in acidic or alkaline aqueous solutions is preferably 8 to 120 minutes, more preferably 10 to 90 minutes, and even more preferably 15 to 60 minutes. Here, when repeated short immersion treatments are performed, the immersion time refers to the total of all immersion times. Furthermore, a cleaning treatment can be performed between each immersion treatment.

[0241] Furthermore, the degree to which the metal 35, i.e., the conductor 14, protrudes more than the surface 12a or the back surface 12b of the insulating film 12 is specified, but preferably the conductor 14 protrudes 10 nm to 1000 nm more than the surface 12a or the back surface 12b of the insulating film 12, more preferably 50 nm to 500 nm more. That is, the amount of protrusion from the surface 12a of the protrusion 14a and the amount of protrusion of the conductor 14 from the back surface 12b of the protrusion 14b are preferably 10 nm to 1000 nm, more preferably 50 nm to 500 nm.

[0242] The heights of the protrusions 14a and 14b of conductor 14 refer to the average values ​​obtained by observing the cross-section of structure 10 at 20,000x magnification using a field emission scanning electron microscope and measuring the heights of the protrusions at 10 points.

[0243] When strictly controlling the height of the protrusion of the conductor 14, it is preferable to fill the inside of the fine hole 13 with a conductive material such as metal, process the end of the insulating film 12 and the conductive material such as metal to be in the same plane, and then selectively remove the anodic oxide film.

[0244] Furthermore, after the aforementioned metal filling or protrusion process, in order to reduce the strain within the conductor 14 generated during the metal filling, a heat treatment can be performed.

[0245] From the viewpoint of suppressing metal oxidation, it is preferable to carry out the heat treatment in a reducing atmosphere, specifically, preferably in an atmosphere with an oxygen concentration of 20 Pa or less, and more preferably in a vacuum. Here, a vacuum refers to a space where at least one of the gas density and pressure is lower than that of the atmosphere.

[0246] Furthermore, in order to correct the problem, it is preferable to perform a heat treatment while applying stress to the insulating film 12.

[0247] [The process of forming the resin layer]

[0248] In the process of forming the resin layer 20, methods such as inkjet printing, transfer printing, spraying, or screen printing can be used. Inkjet printing directly forms the resin layer 20 on the insulating film 12, thus simplifying the process of forming the resin layer 20, and is therefore preferred.

[0249] Furthermore, the resin layer formation process can be performed by partially removing the resin layer after it has been formed on the entire surface of the conductor protrusion of the insulating film. For example, a resist can be patterned on the resin layer formed on the entire surface and removed by wet etching, thereby forming a patterned resin layer.

[0250] The resin layer formation process can involve forming a resin layer on the entire surface of the conductor protrusion of the insulating film, followed by partial removal of the resin layer formed at the ends of the insulating film. For example, a photoresist can be patterned on the resin layer formed on the entire surface, and the ends of the insulating film can be removed by wet etching, thereby forming a patterned resin layer.

[0251] The resin layer can also use the composition shown below. The composition of the resin layer will be explained below. For example, the resin layer may contain a polymer material or an antioxidant material.

[0252] <Polymer Materials>

[0253] There are no particular limitations on the polymer material contained in the resin layer, but thermosetting resins are preferred from the perspective of being able to efficiently fill the gap between the bonding object such as a semiconductor chip or semiconductor wafer and the structure and further improve the adhesion between the structure and the semiconductor chip or semiconductor wafer.

[0254] As thermosetting resins, examples include epoxy resins, phenolic resins, polyimide resins, polyester resins, polyurethane resins, bismaleimide resins, melamine resins, isocyanate resins, etc.

[0255] Among these considerations, considering the need to further improve insulation reliability and excellent chemical resistance, polyimide resin and / or epoxy resin are preferred.

[0256] <Antioxidant Materials>

[0257] As antioxidant materials included in the resin layer, examples include 1,2,3,4-tetrazolium, 5-amino-1,2,3,4-tetrazolium, 5-methyl-1,2,3,4-tetrazolium, 1H-tetrazolium-5-acetic acid, 1H-tetrazolium-5-succinic acid, 1,2,3-triazole, 4-amino-1,2,3-triazole, 4,5-diamino-1,2,3-triazole, 4-carboxyl-1H-1,2,3-triazole, 4,5-dicarboxyl-1H-1,2,3-triazole, 1H-1,2,3-triazole-4-acetic acid, and 4-carboxyl-5-carboxyl... Methyl-1H-1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 3-carboxy-1,2,4-triazole, 3,5-dicarboxy-1,2,4-triazole, 1,2,4-triazole-3-acetic acid, 1H-benzotriazole, 1H-benzotriazole-5-carboxylic acid, benzofuran, 2,1,3-benzothiazole, o-phenylenediamine, m-phenylenediamine, catechol, o-aminophenol, 2-mercaptobenzothiazole, 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, melamine and derivatives thereof.

[0258] Among these, benzotriazole and its derivatives are preferred.

[0259] Examples of benzotriazole derivatives include substituted benzotriazoles having hydroxyl, alkoxy (e.g., methoxy, ethoxy, etc.), amino, nitro, alkyl (e.g., methyl, ethyl, butyl, etc.), or halogen (e.g., fluorine, chlorine, bromine, iodine, etc.) atoms on the benzene ring of benzotriazole. Furthermore, examples include substituted naphthiatriazoles and substituted naphthiabistriazoles that have undergone the same substitutions as naphthiatriazole and naphthiabistriazole.

[0260] Furthermore, as another example of antioxidant materials contained in the resin layer, examples include higher fatty acids, copper higher fatty acids, phenolic compounds, alkanolamines, hydroquinones, copper chelating agents, organic amines, and organic ammonium salts, which are common antioxidants.

[0261] The content of antioxidant material contained in the resin layer is not particularly limited, but from the viewpoint of corrosion protection, it is preferable to be 0.0001% by mass or more, more preferably 0.001% by mass or more, relative to the total mass of the resin layer. Furthermore, from the perspective of obtaining appropriate resistance in the formal bonding process, it is preferable to be 5.0% by mass or less, more preferably 2.5% by mass or less.

[0262] <Anti-migration materials>

[0263] Considering the need to further improve insulation reliability by capturing metal ions, halogen ions, and metal ions from semiconductor chips and wafers that may be contained in the resin layer, the resin layer preferably contains an anti-migration material.

[0264] As an anti-migration material, for example, ion exchangers can be used, specifically, a mixture of cation exchangers and anion exchangers or only cation exchangers can be used.

[0265] The cation exchanger and anion exchanger can be appropriately selected from the inorganic and organic ion exchangers described later, for example.

[0266] (Inorganic ion exchanger)

[0267] Examples of inorganic ion exchangers include hydrated oxides of metals, such as hydrated zirconium oxide.

[0268] As for metals, besides zirconium, known metals include iron, aluminum, tin, titanium, antimony, magnesium, beryllium, indium, chromium, and bismuth.

[0269] Among these, zirconium-based substances have the ability to exchange for the cations Cu2+ and Al3+. Furthermore, iron-based substances also have the ability to exchange for Ag+ and Cu2+. Similarly, tin-based, titanium-based, and antimony-based substances are cation exchangers.

[0270] On the other hand, bismuth-based substances have the ability to exchange Cl- anions.

[0271] Furthermore, zirconium-based materials exhibit anion exchange capacity depending on the manufacturing conditions. The same applies to aluminum-based and tin-based materials.

[0272] Other inorganic ion exchangers besides these include acidic salts of polyvalent metals such as zirconium phosphate, heteropolyacid salts such as ammonium phosphomolybdate, and insoluble ferrocyanides.

[0273] Some of these inorganic ion exchangers are already commercially available, for example, various grades of the trade name "IXE" from TOAGOSEI CO.,LTD.

[0274] In addition to synthetic products, powders of inorganic ion exchangers such as natural zeolite or montmorillonite can also be used.

[0275] (Organic ion exchanger)

[0276] Among organic ion exchangers, cross-linked polystyrene having sulfonic acid groups can be cited as a cation exchanger. In addition, those having carboxylic acid groups, phosphonic acid groups, or hypophosphonic acid groups can also be cited.

[0277] Furthermore, cross-linked polystyrene having quaternary ammonium, quaternary phosphonium, or tertiary sulfonium groups can be cited as an anion exchanger.

[0278] The selection of inorganic and organic ion exchangers can be made by considering the types of cations and anions to be captured and their exchange capacity. Of course, it is also possible to use a mixture of inorganic and organic ion exchangers, which is beyond doubt.

[0279] Since the manufacturing process of electronic components includes a heating process, inorganic ion exchangers are preferred.

[0280] Furthermore, regarding the mixing ratio of the ion exchanger to the aforementioned polymer material, for example, from the viewpoint of mechanical strength, it is preferable to set the ion exchanger to 10% by mass or less, more preferably to set it to 5% by mass or less, and even more preferably to set it to 2.5% by mass or less. Moreover, from the viewpoint of suppressing migration when bonding semiconductor chips or semiconductor wafers to the structure, it is preferable to set the ion exchanger to 0.01% by mass or more.

[0281] <Inorganic fillers>

[0282] The resin layer preferably contains an inorganic filler.

[0283] As an inorganic filler, there are no particular limitations, and appropriate selections can be made from known substances, such as kaolin, barium sulfate, barium titanate, silica powder, micronized silica, fumed silica, amorphous silica, crystalline silica, fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, alumina, aluminum hydroxide, mica, aluminum nitride, zirconium oxide, yttrium oxide, silicon carbide, and silicon nitride.

[0284] Considering the need to prevent inorganic fillers from entering between the conductive paths and thus further improve conductivity reliability, it is preferable that the average particle size of the inorganic filler is larger than the spacing between each conductive path.

[0285] The average particle size of the inorganic filler is preferably 30 nm to 10 μm, more preferably 80 nm to 1 μm.

[0286] Regarding the average particle size, the single particle size measured by a laser diffraction scattering particle size analyzer (Microtrac MT3300 manufactured by Nikkiso Co., Ltd.) is defined as the average particle size.

[0287] <Curing agent>

[0288] The resin layer may contain a curing agent.

[0289] In the case of a curing agent, from the viewpoint of suppressing poor bonding with the surface shape of the semiconductor chip or semiconductor wafer to which the bonding object is located, it is more preferable to use a curing agent that is liquid at room temperature instead of a curing agent that is solid at room temperature.

[0290] "Being solid at room temperature" means being solid at 25°C, for example, referring to substances with a melting point above 25°C.

[0291] Specifically, examples of curing agents include aromatic amines such as diaminodiphenylmethane and diaminodiphenyl sulfone, aliphatic amines, imidazole derivatives such as 4-methylimidazole, dicyandiamide, tetramethylguanidine, thiourea addition amines, carboxylic anhydrides such as methylhexahydrophthalic anhydride, carboxylic hydrazides, carboxylic amides, polyphenolic compounds, phenolic varnish resins, and polythiols. A suitable curing agent can be selected from these and used in a liquid state at 25°C. Furthermore, a single curing agent can be used, or two or more can be used simultaneously.

[0292] The resin layer may contain a wide range of additives, such as dispersants, buffers, and viscosity modifiers, which are commonly added to the resin insulating film of semiconductor packages, without impairing its properties.

[0293] In addition to the substances described above, other resin layers may be used, for example, to contain a main composition comprising an acrylic polymer, an acrylic monomer, and a maleimide compound as shown below.

[0294] <Acrylic Polymer>

[0295] The acrylic polymer is a polymer containing structural units derived from (meth)acrylate components. Preferably, the resin layer has low tackiness and minimal concerns about impairing workability during semiconductor mounting processes. Examples of (meth)acrylate components that can be used include methyl methacrylate, ethyl methacrylate, butyl methacrylate, isobutyl methacrylate, tert-butyl methacrylate, butoxyethyl (meth)acrylate, isoamyl methacrylate, hexyl methacrylate, 2-ethylhexyl methacrylate, heptyl methacrylate, octylheptyl methacrylate, nonyl methacrylate, decyl methacrylate, undecyl methacrylate, lauryl methacrylate, etc.

[0296] In addition to the (meth)acrylate component described above, the acrylic polymer may also contain structural units corresponding to other monomer components that can copolymerize with the (meth)acrylate component described above. Other monomer components may include, for example, carboxyl-containing monomers (e.g., (meth)acrylate), epoxy-containing monomers (e.g., glycidyl (meth)acrylate), and nitrile-containing monomers (e.g., acrylonitrile, etc.).

[0297] For example, as an acrylic polymer, it is possible to use structural units that include butyl acrylate, methyl acrylate, acrylic acid, glycidyl methacrylate, and acrylonitrile.

[0298] Acrylic polymers can be obtained by polymerizing the aforementioned (meth)acrylate component or other monomer components. Examples of polymerization methods include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. Types of polymerization reactions for acrylic polymers include, for example, free radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, and coordination polymerization.

[0299] There are no particular limitations on the weight-average molecular weight (Mw) of the acrylic polymer, but it can be set to be in the range of 100,000 or more and 1,200,000 or less, or it can be set to be in the range of 500,000 or more and 1,000,000 or less.

[0300] If the acrylic polymer, acrylic monomer, and maleimide compound in the resin layer are referred to as the main composition, then the acrylic polymer is contained in the range of 10 parts by mass and 60 parts by mass per 100 parts by mass of the main composition, preferably in the range of 10 parts by mass and 45 parts by mass, and more preferably in the range of 15 parts by mass and 40 parts by mass. If the content of the acrylic polymer is less than 10 parts by mass, there is a tendency to make it difficult to eliminate voids. Furthermore, if the content of the acrylic polymer exceeds 60 parts by mass, there is a tendency to make it difficult to achieve low-pressure installation, thereby leading to a tendency for poor adhesion.

[0301] Regarding acrylic polymers, the main composition may contain only one type of acrylic polymer, or it may contain two or more types of acrylic polymers simultaneously. When using two or more types of acrylic polymers simultaneously, it is preferable that the total content of acrylic polymers in the resin layer is within the above-mentioned range.

[0302] <Acrylic monomer>

[0303] As an acrylic monomer, monofunctional (meth)acrylates and (meth)acrylates with more than two functions can be used. Examples of acrylic monomers include EO-modified diacrylate (manufactured by TOAGOSEI CO.,LTD.), EO-modified triacrylate (manufactured by TOAGOSEI CO.,LTD.), dipentaerythritol and tetraacrylate (manufactured by TOAGOSEI CO.,LTD.), 2-hydroxy-3-phenoxypropyl acrylate (manufactured by TOAGOSEI CO.,LTD.), 9,9-bis[4-(2-acryloyloxyethoxy)phenyl]fluorene (manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.), tricyclodecanediethanol diacrylate (manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.), bisphenol A diacrylate ethoxylate (manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.), and fluorene-based acrylates (e.g., product names: Ogsol EA0200, EA0300, manufactured by Osaka Gas Chemicals Co., Ltd.). Among these acrylic monomers, fluorene-based acrylates with high heat resistance are preferred, taking into account factors such as heat resistance.

[0304] The acrylic monomer in the resin layer can be configured such that it is present in a range of 10 parts by mass or more and 60 parts by mass or less per 100 parts by mass of the main composition, preferably in a range of 10 parts by mass or more and 55 parts by mass or less, and more preferably in a range of 10 parts by mass or more and 50 parts by mass or less. If the content of acrylic monomer is less than 10 parts by mass, there is a tendency for poor bonding. Furthermore, if the content of acrylic monomer exceeds 60 parts by mass, there is a tendency for it to be difficult to eliminate voids.

[0305] Regarding acrylic monomers, the resin may contain only one type of acrylic monomer, or it may contain two or more types of acrylic monomers simultaneously. When using two or more types of acrylic monomers simultaneously, the total content of acrylic monomers in the resin layer is preferably within the range described above.

[0306] <Maleimide Compounds>

[0307] As maleimide compounds, compounds having two or more maleimide groups in one molecule can be used, with bismaleimides being preferred. Examples of maleimide compounds include 4-methyl-1,3-phenylene bismaleimide, 4,4-bismaleimide diphenylmethane, m-phenylene bismaleimide, bisphenol A diphenyl ether bismaleimide, and 3,3'-dimethyl-5,5'-diethyl-4,4'-diphenylmethane bismaleimide. Among these, aromatic bismaleimides are preferred, and in particular, considering workability in the resin layer manufacturing process, 3,3'-dimethyl-5,5'-diethyl-4,4'-diphenylmethane bismaleimide with good solvent solubility or flowability is preferred.

[0308] The maleimide compound in the resin layer is present in a range of 20 parts by weight or more and 70 parts by weight or less per 100 parts by weight of the main composition, preferably in a range of 20 parts by weight or more and 60 parts by weight or less, and more preferably in a range of 20 parts by weight or more and 55 parts by weight or less. If the content of the maleimide compound is less than 20 parts by weight, there is a tendency to make low-pressure installation difficult, resulting in poor adhesion. Furthermore, if the content of the maleimide compound exceeds 70 parts by weight, there is a tendency to make low-pressure installation and gapless installation difficult.

[0309] The composition used in the resin layer may also contain other components besides those constituting the main composition, depending on the purpose. Examples of such other components include phenolic compounds and fillers.

[0310] <Phenolic compounds>

[0311] Phenolic compounds can be used as curing agents for the aforementioned maleimide compounds, but a thermosetting reaction can also be initiated even without phenol. Examples of phenolic compounds include allylated bisphenols, specifically 2,2'-diallylbisphenol A (product name: DABPA), 4,4'-(dimethylmethylene)bis[2-(2-propenyl)phenol], 4,4'-methylenebis[2-(2-propenyl)phenol], and 4,4'-(dimethylmethylene)bis[2-(2-propenyl)-6-methylphenol]. Among these, 2,2'-diallylbisphenol A is preferred.

[0312] When phenolic compounds are present, the content of the phenolic compounds can be set to, for example, 15 parts by mass or less relative to the total of 100 parts by mass of the acrylic polymer, acrylic monomer, maleimide compound, and phenolic compound. Regarding the phenolic compounds, one type of phenolic compound may be contained alone, or two or more types of phenolic compounds may be contained simultaneously. When two or more types of phenolic compounds are used simultaneously, it is preferable that the total content of the phenolic compounds in the resin layer is within the above-mentioned range.

[0313] <Packaging>

[0314] Inorganic fillers, organic fillers, conductive particles, etc., can be used as fillers. In particular, from the viewpoint of reducing the coefficient of linear expansion or improving reliability, inorganic fillers (e.g., silica fillers) are preferred.

[0315] When using fillers, the filler content can be set to 30 parts by mass or less, for example, relative to 100 parts by mass of the total acrylic polymer, acrylic monomer, maleimide compound, and filler. Regarding fillers, one type of filler may be used alone, or two or more types of fillers may be used simultaneously. When two or more types of fillers are used simultaneously, the total filler content in the resin layer is preferably within the above-mentioned range.

[0316] [An example of a joint]

[0317] Figure 14 This is a schematic diagram illustrating an example of the assembly of an embodiment of the present invention. Figure 15 This is a schematic diagram illustrating another example of the assembly according to an embodiment of the present invention. Additionally, Figure 14 The stacked device 40 shown represents an example of a joint. Figure 15 The stacked device 40 shown represents another example of a joint. The aforementioned structure 10 (see reference) Figure 1 () can be used as an anisotropic conductive component 45 exhibiting anisotropic conductivity. The stacked device has a conductive component and an anisotropic conductive component, the conductive component having a conductive portion having conductivity, and the stacked device contacts and engages the conductive portion with a protrusion of the anisotropic conductive component.

[0318] Figure 14 The stacked device 40 shown is, for example, a semiconductor element 42, an anisotropic conductive component 45, and a semiconductor element 44 sequentially bonded and electrically connected along the stacking direction Ds. In the anisotropic conductive component 45, conductor 14 (reference) Figure 1 It is arranged parallel to the stacking direction Ds and is conductive in the stacking direction Ds.

[0319] In addition, the stacked semiconductor element 42, anisotropic conductive component 45 and semiconductor element 44 constitute a junction 41.

[0320] The stacked device 40 is a method of bonding one semiconductor element 44 to one semiconductor element 42, but it is not limited to this. For example... Figure 15The stacked device 40 shown can be configured such that three semiconductor elements 42, 44, and 46 are bonded together via anisotropic conductive components 45. The stacked device 40 is composed of three semiconductor elements 42, 44, and 46 and two anisotropic conductive components 45. The stacked semiconductor elements 42, 44, 46, and 46 form a junction 41.

[0321] Semiconductor elements 42, 44, and 46 are conductive components having conductive portions that are conductive. The conductive components having conductive portions are not limited to semiconductor elements and can be substrates with electrodes. Substrates with electrodes include, for example, wiring substrates and interlayers.

[0322] Furthermore, there are no particular limitations on the way devices are stacked. Examples include SoC (System on a chip), SiP (System in Package), PoP (Package on Package), PiP (Package in Package), CSP (Chip Scale Package), and TSV (Through Silicon Via).

[0323] The stacked device 40 may include a semiconductor element that functions as an optical sensor. For example, the semiconductor element and a sensor chip (not shown) are stacked along the stacking direction Ds. A lens may be disposed on the sensor chip.

[0324] At this point, the semiconductor element is not particularly limited in its structure as long as it can process the signals obtained from the sensor chip, as long as it can form a logic circuit.

[0325] The sensor chip has a light sensor that detects light. There are no particular limitations on the light sensor as long as it can detect light; for example, a CCD (Charge Coupled Device) image sensor or a CMOS (Complementary Metal Oxide Semiconductor) image sensor can be used.

[0326] Regarding lenses, their structure is not particularly limited as long as they can focus light onto the sensor chip; for example, lenses called microlenses can be used.

[0327] Furthermore, if a conductive component with a conductive part is joined to a structure, it is called a bonded body. However, if the bonded object of the structure is a semiconductor element with electrodes, and the semiconductor element is joined to the structure, the bonded material becomes a device.

[0328] [Manufacturing method of the joint]

[0329] Next, as a method for manufacturing the joint, for having Figure 14 The manufacturing method of the stacked device 40 of the anisotropic conductive component 45 shown will be described.

[0330] Figure 16 and Figure 17 This is a schematic cross-sectional view illustrating an example of a manufacturing method for a joint according to an embodiment of the present invention, arranged in the order of process steps. Figure 16 and Figure 17 In the middle, to and Figure 14 and Figure 15 The same components of the stacked device 40 and semiconductor elements 42 and 44 shown are marked with the same symbols, and their detailed descriptions are omitted.

[0331] in addition, Figure 16 and Figure 17 The manufacturing method of the stacked device 40 shown is related to chip-on-chip.

[0332] When manufacturing a stacked device 40 having anisotropic conductive components 45, firstly, prepare... Figure 16 The semiconductor element 42, semiconductor element 44, and anisotropic conductive component 45 are shown. For example, the semiconductor element 42 has a plurality of electrodes 52 provided on the semiconductor element portion 50. These electrodes 52 are used for exchanging signals with the outside world or for exchanging voltage or current. Each electrode 52 is electrically insulated by an insulating layer 54. The electrodes 52, for example, protrude beyond the surface 54a of the insulating layer 54.

[0333] Semiconductor element 44 has the same structure as semiconductor element 42. Semiconductor element 44 has, for example, a plurality of electrodes 53 disposed on an interposer substrate 51. These electrodes 53 are used for exchanging signals, voltage, or current with the outside. Each electrode 53 is electrically insulated by an insulating layer 55. The electrodes 53, for example, protrude beyond the surface 55a of the insulating layer 55. The interposer substrate 51, for example, has a lead-out wiring layer, and the stacked device 40 is electrically connected to the outside via the electrodes 53.

[0334] The anisotropic conductive component 45 includes a plurality of conductors 14, each conductor 14 having a protrusion 14a protruding from the surface 12a of the insulating film 12 and a protrusion 14b protruding from the back surface 12b. Furthermore, a resin layer 20 is partially disposed on both the surface 12a and the back surface 12b of the insulating film 12. The anisotropic conductive component 45 has the same structure as the structure 10 described above, therefore its detailed description is omitted.

[0335] like Figure 16 As shown, semiconductor elements 42 and 44 are arranged opposite to electrodes 53 and 52 via anisotropic conductive component 45.

[0336] At this time, alignment is performed using alignment marks (not shown) respectively provided on semiconductor elements 42, 44 and anisotropic conductive component 45.

[0337] Furthermore, regarding alignment using alignment marks, there are no particular limitations, such as as long as an image or reflected image of the alignment marks can be obtained and the position information of the alignment marks can be determined, and known alignment methods can be appropriately utilized.

[0338] Next, the semiconductor element 42, the anisotropic conductive component 45, and the semiconductor element 44 are brought close together, such as... Figure 17 As shown, the semiconductor element 42, the anisotropic conductive component 45, and the semiconductor element 44 are stacked together, and then bonded together with the semiconductor element 42, the anisotropic conductive component 45, and the semiconductor element 44 aligned. Thus, the semiconductor element 42, the anisotropic conductive component 45, and the semiconductor element 44 are bonded together to obtain the stacked device 40.

[0339] Thus, a bonded body can be obtained through a bonding process, which joins a conductive component and a structure having a conductive part by bringing the conductor of the structure into contact with the conductive part.

[0340] Furthermore, in the anisotropic conductive component 45, the resin layer 20 is partially disposed on the surface 12a and the back surface 12b of the insulating film 12, respectively. Therefore, charging is suppressed when the anisotropic conductive component 45 is transported, operation becomes easier, and the anisotropic conductive component 45 can be easily disposed between the semiconductor element 42 and the semiconductor element 44.

[0341] Furthermore, a resin layer 20 is provided locally during bonding, which reduces the force required for bonding.

[0342] [An example of a manufacturing method for multilayer devices]

[0343] Next, regarding an example of a manufacturing method for a device that uses a structure, as described above... Figure 14 The example shown is a stacked device 40.

[0344] One example of a fabrication method using stacked devices with structures is related to wafer-on-a-chip.

[0345] Figures 18-20 This is a schematic diagram illustrating an example of a manufacturing method for a stacked device using a structure according to an embodiment of the present invention, arranged in the order of process steps.

[0346] In one example of a manufacturing method using a stacked device with a structure, there are multiple element regions (not shown) on the surface 60a of the first semiconductor wafer 60, and an anisotropic conductive component 45 is provided on each element region.

[0347] Next, a semiconductor element 44 is disposed toward the anisotropic conductive component 45 of the first semiconductor wafer 60. The semiconductor element 44 has electrodes (not shown).

[0348] Next, the semiconductor element 44 is aligned with the first semiconductor wafer 60 using the alignment marks of the semiconductor element 44 and the alignment marks of the first semiconductor wafer 60.

[0349] Furthermore, regarding alignment, as long as digital image data of the alignment marks or reflected images of the first semiconductor wafer 60 and the alignment marks or reflected images of the semiconductor element 44 can be obtained, its structure is not particularly limited, and known imaging devices can be appropriately utilized.

[0350] Next, the semiconductor element 44 is placed on the anisotropic conductive member 45 disposed on the element region of the first semiconductor wafer 60, and a temporary connection is achieved, for example, by applying a predetermined pressure, heating to a predetermined temperature, and holding for a predetermined time. This is performed on all semiconductor elements 44, as follows: Figure 19 As shown, all semiconductor elements 44 are temporarily bonded to the element region of the first semiconductor wafer 60.

[0351] Temporary bonding, for example, utilizes a locally formed resin layer 20 (reference). Figure 1 However, it is not limited to using resin layer 20 (see reference). Figure 1 For example, a sealing resin or the like can be supplied to the anisotropic conductive component 45 of the first semiconductor wafer 60 by a dispensing machine, thereby temporarily bonding the semiconductor element 44 to the element region of the first semiconductor wafer 60. Alternatively, an insulating resin film (NCF (Non-conductive Film)) supplied in advance can be used on the first semiconductor wafer 60 to temporarily bond the semiconductor element 44 to the element region.

[0352] Next, with all semiconductor elements 44 temporarily bonded to the element region of the first semiconductor wafer 60, a predetermined pressure is applied to the semiconductor elements 44, they are heated to a predetermined temperature, and held for a predetermined time, thereby concentrating all semiconductor elements 44 together and bonding them to the element region of the first semiconductor wafer 60 via the anisotropic conductive member 45. This bonding is called formal bonding. Thus, the terminals (not shown) of the semiconductor elements 44 are bonded to the anisotropic conductive member 45 of the first semiconductor wafer 60. During formal bonding, a resin layer 20 (see reference) is partially provided. Figure 1 Therefore, the force required for bonding can be reduced. The formal bonding is equivalent to the bonding process, which bonds the electrodes of the semiconductor element 44 and the anisotropic conductive component 45, i.e., the structure 10, by bringing the conductor of the structure into contact with the electrodes of the semiconductor element 44.

[0353] Next, as Figure 20 As shown, the first semiconductor wafer 60, to which semiconductor elements 44 are bonded, is formed into a single piece for each element region by means of cutting or laser scribing. Thus, a stacked device 40 formed by bonding semiconductor elements 42 and semiconductor elements 44 together can be obtained.

[0354] Furthermore, if the temporary joint is weak, misalignment will occur in processes such as conveying and processes prior to the joint, thus the strength of the temporary joint becomes important.

[0355] Furthermore, there are no particular limitations on the temperature and pressure conditions in the temporary bonding process; examples of the temperature and pressure conditions described later can be provided.

[0356] There are no particular limitations on the temperature and pressure conditions during the formal bonding process. By performing the formal bonding under appropriate conditions, the resin layer flows between the electrodes of the semiconductor element 44 and is unlikely to remain in the bonding area. As described above, by focusing the bonding of multiple semiconductor elements 44 during the formal bonding process, cycle time can be reduced, thereby increasing productivity.

[0357] in addition, Figure 15 The stacked device 40 with the structure shown can also be manufactured in the manner described above. Furthermore, Figure 14 and Figure 15 The stacked devices 40 shown can all be manufactured using a wafer-on-wafer manufacturing method.

[0358] Furthermore, semiconductor elements 42, 44, and 46 described above have element regions (not shown). Regarding the element regions, as described above, element-structured circuits are formed on the element regions, and for example, a rewiring layer (not shown) is provided on the semiconductor elements.

[0359] In a stacked device, for example, it can be a combination of semiconductor elements having logic circuits and semiconductor elements having memory circuits. Furthermore, each semiconductor element may have both memory circuits and logic circuits. Moreover, the combination of semiconductor elements in the stacked device 40 can be a combination of sensors, actuators, and antennas with memory circuits and logic circuits, and is appropriately determined according to the application of the stacked device 40.

[0360] [The objects to be joined by the structure]

[0361] As described above, the objects to be joined in the structure are exemplified by semiconductor elements, but may also be, for example, regions with electrodes or components. Components with electrodes may include, for example, semiconductor elements that individually perform a specific function, but may also include components where multiple components are aggregated to perform a specific function. Furthermore, components that merely transmit electrical signals to wiring components, etc., are also included in components with electrodes.

[0362] The component area is the region where various components that function as electronic components, forming circuits, etc., are formed. Examples of component areas include memory circuits such as flash memory, logic circuits such as microprocessors and FPGAs (field-programmable gate arrays), communication modules such as wireless tags, and wiring. In addition, MEMS (Micro Electromechanical Systems) can also be formed in the component area. Examples of MEMS include sensors, actuators, and antennas. Sensors include various sensors such as acceleration, sound, and light sensors.

[0363] As described above, components forming circuits are formed on the component region, and electrodes (not shown) are provided to electrically connect the semiconductor chip to the outside. The component region has an electrode region where electrodes are formed. Furthermore, the electrodes in the component region are, for example, Cu pillars. The electrode region essentially refers to the region containing all the formed electrodes. However, if the electrodes are provided separately, the region where each electrode is provided is also called an electrode region.

[0364] As a structural element, it can be formed as a single chip like a semiconductor chip, as a semiconductor wafer, or as a wiring layer.

[0365] Furthermore, the structure is joined to the object to be joined, but the object to be joined is not particularly limited to the aforementioned semiconductor elements, etc. For example, semiconductor elements in wafer state, semiconductor elements in chip state, printed circuit boards and heat sinks are joined to the object to be joined.

[0366] [Semiconductor components]

[0367] Regarding the aforementioned semiconductor elements 42, 44, and 46, in addition to those mentioned above, examples include logic LSI (Large Scale Integration) (e.g., ASIC (Application Specific Integrated Circuit), FPGA (Field Programmable Gate Array), ASSP (Application Specific Standard Product), etc.), microprocessors (e.g., CPU (Central Processing Unit), GPU (Graphics Processing Unit), etc.), memories (e.g., DRAM (Dynamic Random Access Memory), HMC (Hybrid Memory Cube), MRAM (Magnetic RAM), PCM (Phase Change Memory), ReRAM (Resistive RAM), FeRAM (Ferroelectric RAM), flash memory (NAND (Not AND) flash), etc.), LED (Light Emitting) Diode (Light Emitting Diode): (e.g., micro flashlights in mobile terminals, automotive applications, projector light sources, LCD backlights, general lighting, etc.), power / devices, analog ICs (Integrated Circuits): (e.g., DC-DC converters, IGBTs, etc.), MEMS (Micro Electro Mechanical Systems): (e.g., accelerometers, pressure sensors, oscillators, gyroscopes, etc.), wireless (e.g.,GPS (Global Positioning System), FM (Frequency Modulation), NFC (Nearfield Communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network), discrete components, BSI (Back Side Illumination), CIS (Contact Image Sensor), camera modules, CMOS (Complementary Metal Oxide Semiconductor), passive components, SAW (Surface Acoustic Wave) filters, RF (Radio Frequency) filters, RFIPD (Radio Frequency Integrated Passive Devices), BB (Broadband), etc.

[0368] A semiconductor element can be made from a single component and can perform specific functions such as a circuit or sensor on its own. The semiconductor element may have an interposer function. Furthermore, for example, multiple devices such as logic chips and memory chips with logic circuits can be stacked on a device having an interposer function. In this case, bonding can be achieved even if the electrode dimensions of each device are different.

[0369] Furthermore, as a stacked device, it is not limited to the method of bonding multiple semiconductor elements to one semiconductor element, i.e., a one-to-many method, but can also be the method of bonding multiple semiconductor elements to multiple semiconductor elements, i.e., a many-to-many method.

[0370] The present invention is basically as described above. The structure, manufacturing method of the structure, manufacturing method of the connector, and manufacturing method of the device of the present invention have been described in detail above. However, the present invention is not limited to the above embodiments, and various modifications or alterations can be made without departing from the spirit of the present invention.

[0371] Symbol Explanation

[0372] 10-Structure, 12-Insulating film, 12a-Surface, 12b-Back side, 13-Fine hole, 14-Conductor, 14a-Protrusion, 14b-Protrusion, 15-Anodized film, 20, 21, 22-Resin layers, 20a, 22a-Resin layer portions, 20b, 22b-Space, 30-Aluminum substrate, 30a-Surface, 31-Barrier layer, 32c-Bottom, 32d-Face, 35-Metal, 35a-Metal layer, 35b-Metal, 40 - Stacked devices, 41- Junction, 42, 44, 46- Semiconductor elements, 45- Anisotropic conductive components, 50- Semiconductor elements, 51- Intermediate substrate, 52, 53- Electrodes, 54, 55- Insulating layers, 54a, 55a, 60a- Surfaces, 60- First semiconductor wafer, Ds- Stacking direction, Dt- Thickness direction, d- Average diameter, H- Height, hm- Average thickness, ht- Thickness, Rs- Region, p- Center-to-center distance.

Claims

1. A structure for a conductive component, comprising: Insulating film; and Multiple conductors are arranged to penetrate the insulating film along its thickness direction and to be electrically insulated from each other. The conductor protrudes from at least one side surface of the insulating film in the thickness direction. Furthermore, the structure has a resin layer that partially covers the surface of the conductor protruding from the insulating film. The resin layer has multiple resin portions and spaces, and the resin layer is partially disposed on the surface of the insulating film, separating the spaces. The resin layer portion of the resin layer covers the protruding plurality of conductors. At least one end of the conductor in the space is not covered by the resin layer. The plurality of conductors covered by each of the resin layer portions of the resin layer are bonded to the bonding object.

2. The structure according to claim 1, wherein, The conductors protrude from both sides of the insulating film along its thickness direction. The resin layer partially covers each of the two surfaces of the insulating film in the thickness direction.

3. The structure according to claim 1 or 2, wherein, The average protrusion length of the conductor is less than the average thickness of the resin layer.

4. The structure according to claim 1 or 2, wherein, When the area of ​​the insulating film covered by the resin layer is set as Sa, the area of ​​the insulating film without the resin layer is set as Sb, the average protrusion height of the conductor is set as Hd, and the average thickness of the resin layer is set as hm, the following conditions are met: .

5. The structure according to claim 1 or 2, wherein, The resin layer is formed with a fine pattern.

6. The structure according to claim 2, wherein, The resin layers disposed on both sides of the insulating film in the thickness direction are formed with the same pattern.

7. The structure according to claim 1 or 2, wherein, The insulating film is composed of an anodic oxide film.

8. A method for manufacturing a structure for a conductive component, the method comprising: A process of forming a conductor by filling an insulating film having multiple fine pores extending along its thickness direction with a conductive material. The protrusion process causes the conductor to protrude from at least one side surface of the insulating film in the thickness direction; and In the forming process, a resin layer is formed on the surface of the conductor protruding from the insulating film, partially covering the surface of the insulating film. The resin layer has a plurality of resin layer portions and spaces, and the resin layer is partially disposed on the surface of the insulating film, separating the spaces. The forming process forms a plurality of resin layers covering the protruding conductors. At least one end of the conductor in the space is not covered by the resin layer. The plurality of conductors covered by each of the resin layer portions of the resin layer are bonded to the bonding object.

9. The method for manufacturing a structure according to claim 8, wherein, The resin layer is formed using an inkjet printing method.

10. The method for manufacturing a structure according to claim 8, wherein, In the resin layer formation process, after the resin layer is formed on the entire surface of the conductor protruding from the insulating film, the resin layer is partially removed.

11. The method for manufacturing the structure according to claim 8, wherein, In the resin layer formation process, after the resin layer is formed on the entire surface of the conductor protruding from the insulating film, the resin layer formed at the end of the insulating film is partially removed.

12. The method for manufacturing the structure according to any one of claims 8 to 11, wherein, The protrusion process of the conductor is a process in which the conductor protrudes from both sides of the insulating film in the thickness direction. In the resin layer formation process, the resin layer is formed locally on each of the two surfaces in the thickness direction of the insulating film.

13. The method for manufacturing the structure according to any one of claims 8 to 11, wherein, The average protrusion length of the conductor is less than the average thickness of the resin layer.

14. The method for manufacturing the structure according to any one of claims 8 to 11, wherein, When the area of ​​the insulating film covered by the resin layer is set as Sa, the area of ​​the insulating film without the resin layer is set as Sb, the average protrusion height of the conductor is set as Hd, and the average thickness of the resin layer is set as hm, the following conditions are met: .

15. The method for manufacturing a structure according to claim 12, wherein, In the forming process, the resin layer is formed on both sides of the insulating film in the thickness direction with the same pattern.

16. The method for manufacturing a structure according to any one of claims 8 to 11, wherein, The insulating film is composed of an anodic oxide film.

17. A method for manufacturing a joint, the method comprising a joining step, the joining step being to join a conductive component having said conductive portion and said structure by contacting a conductor of a structure according to any one of claims 1 to 7 with a conductive portion having conductivity.

18. A method of manufacturing a device, the method comprising a bonding step, the bonding step being to bond the semiconductor element and the structure by contacting a conductor of a structure according to any one of claims 1 to 7 with the electrode of a semiconductor element having an electrode.

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