Power semiconductor module system and method of manufacturing a power semiconductor module system

Abstract

The invention proposes a method for manufacturing a power semiconductor module system, comprising: a) manufacturing a first power semiconductor module and a second power semiconductor module, wherein the power semiconductor modules each have a power semiconductor circuit; b) connecting a first contact electrode and a second contact electrode with the respective power semiconductor circuit; c) at least partially surrounding the two power semiconductor modules with a common housing, wherein the first contact electrodes and the second contact electrodes of the two power semiconductor modules are each guided outwards through a recess formed in the common housing, and wherein the common housing has a first contact area, a second contact area and a third contact area, and wherein the first contact electrode and the second contact electrode of the first power semiconductor module can be brought into contact with one another in the first contact area, and the first contact electrode and the second contact electrode of the second power semiconductor module can be brought into contact with one another in the second contact area, and the second contact electrode of the first power semiconductor module and the second contact electrode of the second power semiconductor module can be brought into contact with one another in the third contact area.

Description

Technical Field

[0001] This invention relates to a power semiconductor module system. Furthermore, this invention relates to a housing for a power semiconductor module system. The invention also relates to power semiconductor module system components and methods for manufacturing power semiconductor module systems. Background Technology

[0002] Power semiconductor circuits are typically packaged in a housing. Multiple power semiconductor circuits are integrated into the housing primarily for higher power output, enabling higher current handling. The semiconductors in a "half-bridge" are often integrated together in the housing to ensure low-inductance interconnects.

[0003] The housing must perform many different tasks, for which development and manufacturing costs (injection molds, bending tools, automation, etc.) are very high, thus only benefiting high production volumes.

[0004] If higher performance is required for the power semiconductor module, additional and larger power semiconductor circuits must be used to accommodate the necessary semiconductor area. In principle, the number of components in a power semiconductor module decreases as the maximum module rated current (chip area) increases; that is, the larger the module, the fewer components are required / achievable.

[0005] On the other hand, the complexity of a module increases with its size. The cost of components, primarily the base plate and housing, increases excessively. This also applies to the actual manufacturing process. Here, one aspect is the number of necessary process steps (e.g., in the case of multiple brazing operations). Another aspect is the need for additional process steps, such as ultrasonic welding. This is then primarily observed through a higher scrap rate (yield). Additionally, for small power semiconductor module quantities, a high degree of production automation is not economically viable.

[0006] Alternatively, the power of a power semiconductor module can be increased by connecting multiple power semiconductor circuits in parallel within the module. This requires specialized design for the bus connections, drivers, and cooling systems of each power semiconductor circuit to ensure sufficient static and dynamic current symmetry. The design of the power semiconductor module itself (terminals and internal layout) can also significantly influence the current distribution within the module.

[0007] Additionally, modules connected in parallel typically must be selected based on their electrical characteristics, such as the voltage flowing between them. This can be very complex, especially for mathematical logic or maintenance situations.

[0008] To improve or eliminate the problems of low component count and high scrap rate in high-power semiconductor modules, different implementation schemes can be used. Power semiconductor modules can be broken down into smaller sub-units. These sub-units are then pre-tested as much as possible.

[0009] Circuit carriers such as DCBs (Direct Copper Bonds) can be prefabricated as much as possible, for example, by soldering chips and bonding connections within the DCB. The prefabricated DCB can then be tested using low-voltage methods. However, such testing can only detect a portion of the possible faults.

[0010] The individual sub-units are then assembled into a complete power semiconductor module, with additional components added (such as a base plate, housing, contact electrodes, gel, etc.). After assembly, a complete electrical test of the power semiconductor module can then be performed.

[0011] EP 1 467 607 B1 discloses a power switch module having contact electrodes disposed at the housing of a power semiconductor.

[0012] DE 20 2013 105 809 U1 discloses a power semiconductor module and a contact device for contacting switch element contacts. Summary of the Invention

[0013] The purpose of this invention is to provide a power semiconductor module system and a corresponding manufacturing method, which enables simple and efficient scaling of the current to be switched.

[0014] This objective is achieved by the power semiconductor module system according to the invention. This objective is also achieved by the housing for the power semiconductor module system according to the invention. This objective is also achieved by the power semiconductor module system assembly according to the invention and the method for manufacturing the power semiconductor module system according to the invention. Advantageous improvements are derived from the dependent claims.

[0015] According to the present invention, a power semiconductor module system comprising two power semiconductor modules with a common housing. Each power semiconductor module has a power semiconductor circuit, wherein the common housing at least partially surrounds the two power semiconductor circuits, and wherein each power semiconductor module has a first contact electrode and a second contact electrode, the first and second contact electrodes being electrically connected to the power semiconductor circuits, and the first and second contact electrodes being guided outwards through notches in the common housing for the first and second contact electrodes, wherein the common housing has a first contact region, a second contact region, and a third contact region.

[0016] Furthermore, in the first contact region, the first contact electrode and the second contact electrode of the first power semiconductor module can contact each other, and in the second contact region, the first contact electrode and the second contact electrode of the second power semiconductor module can contact each other, and in the third contact region, the second contact electrode of the first power semiconductor module and the second contact electrode of the second power semiconductor module can contact each other.

[0017] Power semiconductor circuits can be used to control and switch currents with relatively high intensities, such as exceeding 50 amperes. Power semiconductor circuits can include power semiconductor components disposed on a substrate, such as IGBTs (Insulated Gate Bipolar Transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), thyristors, diodes, etc., which can be electrically connected to each other via conductive layers of the substrate and bonding wires and / or thin-film composites. The power semiconductor components disposed on the substrate can be electrically interconnected to form single or multiple so-called half-bridge circuits, which are used, for example, for rectifying and inverting voltage and current.

[0018] The function of a housing for a power semiconductor module system can be to relieve mechanical stress, guide and insulate the individual contact electrodes. Within the scope of this invention, any housing that at least partially surrounds two power semiconductor circuits can be used to achieve the above functions. Similarly, within the scope of this invention, it is possible for two power semiconductor modules to have an additional (separate) housing that (partially) surrounds each power semiconductor module in the form of a cast frame. It is also feasible for the "common housing" in the sense of this invention to be shown as a "housing cover" that shields the two power semiconductor modules and the power semiconductor circuits contained therein.

[0019] The function of contact electrodes is to transfer electrical power to semiconductor circuits. To this end, contact electrodes are configured to be conductively connected to external voltage / current sources (e.g., via brazing, welding, or mechanical connections such as hubing or screwing). For this purpose, contact electrodes must have non-negligible conductivity, at least in a sub-region, to enable power to be directed to the semiconductor circuits. Contact electrodes can be made of, for example, copper, nickel-iron, or conductive silicon.

[0020] The power semiconductor module system according to the invention has a housing with at least three contact regions. These contact regions are designed such that two contact electrodes can respectively contact one of the contact regions at the housing location.

[0021] The power semiconductor module system according to the invention achieves mechanical and electrical connections between two completely self-sufficient power semiconductor modules in a simple manner and method at higher power levels, without requiring any changes to the original power semiconductor circuitry. Advantageously, it is now feasible to avoid directly grouping the individual power semiconductor modules side-by-side, thereby reducing the concentration of power losses. Consequently, the design of the cooling system required for the power semiconductor module system can be significantly simplified.

[0022] Connection area / contact options are increased by the power semiconductor module system according to the invention. Individual power semiconductor modules are pre-manufacturing and final tested before being combined into a larger power semiconductor module system. Overall, fewer scraps are obtained (a higher "yield" in module production). Therefore, the value of potentially defective individual components decreases, thus improving cost conditions.

[0023] Preferably, in the first contact region, the first and second contact electrodes of the first power semiconductor module are in common contact with an external voltage / current source; in the second contact region, the first and second contact electrodes of the second power semiconductor module are in common contact with an external voltage / current source; and in the third contact region, the second contact electrodes of the first and second power semiconductor modules are in common contact with an external voltage / current source. The respective external voltage / current source is advantageously a single (identical) voltage / current source.

[0024] The number of contact electrodes and contact areas is not limited to the numbers mentioned above. Rather, it is a minimum configuration. Therefore, a power semiconductor module system can have an integer multiple of two first contact electrodes, an integer multiple of two second contact electrodes, and an integer multiple of three contact areas, wherein the contact electrodes and contact areas are configured at the housing as explained previously. For example, it is feasible for the housing to have nine contact areas, and for each power semiconductor module to have three first contact electrodes and three second contact electrodes, such that the power semiconductor module system has a total of twelve contact electrodes.

[0025] Of course, it is also feasible for the power semiconductor module system to have additional contact areas so that the contact electrodes can be fixed to the housing in the additional areas (grounded via bus connection when necessary) so as to improve the stability of the connection between the housing and other components of the power semiconductor module system.

[0026] Within an advantageous embodiment of the invention, the first and second contact electrodes are each bendable around at least one edge of the housing. Here, the edge preferably has a rounded portion to facilitate bending of the contact electrodes. The edge is advantageously formed in a notched region through which the contact electrodes are guided outwards through the notch into the housing. In other words, the contact electrodes are bendable to a “horizontal” position on the outside of the housing, which is formed, for example, perpendicular to the outside of the housing after being guided through the notch. In the contact region, the bent contact electrodes are then able to contact an external voltage / current source.

[0027] In the notch region where the contact electrode extends outward through the housing, the contact electrode can be surrounded by an electrically insulating material. This material can, for example, be injected into the notch.

[0028] In a particularly preferred embodiment of the invention, the housing has notches in the contact areas for receiving screws, preferably with threaded components inserted into these notches. The notches and preferably the threaded components constitute the means for receiving screws, so that the contact electrodes respectively contact an external voltage / current source, preferably located on the outside of the housing, in the contact areas. The contact electrodes preferably also have corresponding notches (preferably "drilled holes") for receiving screws. Similar fastening options exist, but threaded connections are a common and well-suited method for connecting materials such as contact electrodes and external voltage / current sources to each other. To secure the threaded connection, corresponding threaded components (located on the inside of the housing) can be used. For example, the threaded component can be a nut. To compensate for tolerances, the notches in the contact electrodes can be respectively configured as elongated holes (so-called elongated holes).

[0029] The housing is preferably substantially rectangular, having four large longitudinal sides and two smaller end sides, wherein the contact area is located in the middle region of one of the four longitudinal sides. In other words, the contact area is centrally located within the housing. This provides the following advantages:

[0030] - Symmetrical layout is feasible within each power semiconductor module - the symmetrical layout is particularly suitable for parallel circuits of semiconductor chips;

[0031] - No long conductor structures are formed within the two power semiconductor modules, minimizing the mutual influence between the two power semiconductor modules.

[0032] The objectives mentioned above are also achieved through a housing for a power semiconductor module system, which is configured as previously explained.

[0033] Furthermore, the objectives stated above are achieved through a power semiconductor module system component having multiple power semiconductor module systems configured as explained above.

[0034] This objective is also achieved by a method for manufacturing a power semiconductor module system having the following steps:

[0035] a) Manufacturing a first power semiconductor module and a second power semiconductor module, wherein the power semiconductor modules each have a power semiconductor circuit;

[0036] b) Connect the first contact electrode and the second contact electrode to the corresponding power semiconductor circuit, preferably by means of brazing or ultrasonic welding.

[0037] c) Two power semiconductor modules are at least partially enclosed by a common housing, wherein the first and second contact electrodes of the two power semiconductor modules are respectively guided outward through notches in the common housing for the first and second contact electrodes.

[0038] Furthermore, the common shell has a first contact area, a second contact area, and a third contact area, and

[0039] In this configuration, the first contact electrode and the second contact electrode of the first power semiconductor module are able to contact each other in the first contact area, and

[0040] The first and second contact electrodes of the second power semiconductor module can make contact together in the second contact area.

[0041] Furthermore, the second contact electrode of the first power semiconductor module and the second contact electrode of the second power semiconductor module can make contact together in the third contact area.

[0042] In the additional step, the first contact electrode and the second contact electrode of the first power semiconductor module can be bent and jointly contacted with an external voltage / current source in a first contact area of ​​a common housing, and the first contact electrode and the second contact electrode of the second power semiconductor module can be bent and jointly contacted with an external voltage / current source in a second contact area of ​​a common housing, and the second contact electrode of the first power semiconductor module and the second contact electrode of the second power semiconductor module can be bent and jointly contacted with an external voltage / current source in a third contact area of ​​a common housing, wherein the contact is preferably made by means of screws. Attached Figure Description

[0043] The above-described features, characteristics, and advantages of the present invention, and how to achieve them, become clearer and more apparent in the context of the following description of embodiments, which are illustrated in detail with reference to the accompanying drawings. Hereinafter:

[0044] Figure 1A cross-sectional view of a power semiconductor module system according to the invention based on the first aspect is shown;

[0045] Figure 2 A cross-sectional view of a power semiconductor module system according to the invention based on the second aspect is shown;

[0046] Figure 3 A top view of a power semiconductor module system according to the present invention is shown; and

[0047] Figure 4 A cross-sectional view of a power semiconductor module system according to the present invention is shown. Detailed Implementation

[0048] Figure 1 A cross-sectional view of a power semiconductor module system 1 according to the present invention is shown. The power semiconductor module system 1 has two power semiconductor modules 2 and 3. Each power semiconductor module 2 and 3 has a power semiconductor circuit 4 and 5, respectively. The two power semiconductor modules 2 and 3 have a common housing 6, which at least partially surrounds the power semiconductor circuit 4 and 5 inside.

[0049] The first power semiconductor module 2 has a first contact electrode 7 and a second contact electrode 8. The second power semiconductor module 3 also has a first contact electrode 9 and a second contact electrode 10. Contact electrodes 7, 8, 9, and 10 are electrically connected to corresponding power semiconductor circuits 4 and 5, respectively.

[0050] Contact electrodes 7, 8, 9, and 10 are guided outwards through corresponding notches 11, 12, 13, and 14 into the housing 6. After passing through the housing 6, contact electrodes 7, 8, 9, and 10 can be bent so that they lie substantially flat against the outer side of the housing 6. This aspect is... Figure 2 The following description is provided. Here, the housing 6 is indicated only by dashed lines. The housing has a first contact area 15, a second contact area 16, and a third contact area 17. In the first contact area 15, the first contact electrode 7 and the second contact electrode 8 of the first power semiconductor module 4 can jointly contact an external voltage / current source (not shown). In the second contact area 16, the first contact electrode 9 and the second contact electrode 10 of the second power semiconductor module 5 can jointly contact an external voltage / current source (not shown). In the third contact area 17, the second contact electrode 8 of the first power semiconductor module 4 and the second contact electrode 10 of the second power semiconductor module 5 can jointly contact an external voltage / current source (not shown).

[0051] Circular notches are located in contact electrodes 7, 8, 9, and 10, respectively, through which screws can be guided to make contact electrodes 7, 8, 9, and 10 contact an external voltage / current source. Furthermore, housing 6 has corresponding notches in contact areas 15, 16, and 17 for receiving screws. Additionally, nuts 18, 19, and 20 are inserted into contact areas 15, 16, and 17 in housing 6 as threaded components, allowing screws to be inserted into the nuts to secure the contact. Nuts 18, 19, and 20 can also be injected into housing 6 together. Two additional nuts 21 and 22 are additionally used to secure the first contact electrode 7 of the first power semiconductor module 4 and the first contact electrode 9 of the second power semiconductor module 5 to housing 6.

[0052] exist Figure 2 It can be identified that all four contact electrodes 7, 8, 9, and 10 are electrically connected to each other. For the external current / voltage source to be contacted, the four contact electrodes 7, 8, 9, and 10 therefore function as a single electrical contact with the same potential.

[0053] The power semiconductor module system 1 is not limited to three contact areas 15, 16, 17 and four contact electrodes 7, 8, 9, 10. In Figure 3 The image shows a top view of a power semiconductor module system 1'. The power semiconductor module system 1' has two integer multiples (three times) of first contact electrodes 7, 9, 23, 25, 27, 29 and two integer multiples (three times) of second contact electrodes 8, 10, 24, 26, 28, 30, such that the power semiconductor module system 1' has a total of twelve contact electrodes 7, 8, 9, 10, 23, 24, 25, 26, 27, 28, 29, 30. Furthermore, the power semiconductor system 1' has three integer multiples (three times) of contact regions 15, 16, 17 (for clarity, the contact regions are...). Figure 3 (No reference numerals are provided in the accompanying drawings).

[0054] The housing 6 is essentially rectangular, with four large longitudinal sides and two smaller end sides. Figure 3 In the top view, one of the four longitudinal sides LS is shown with a relatively large area. Contact areas 15, 16, and 17 are located in the middle region of the longitudinal side LS.

[0055] exist Figure 3 It can be identified that the four contact electrodes 7, 8, 9, 10 or 23, 24, 25, 26 or 27, 28, 29, 30 are electrically connected to each other. For the external current / voltage source to be contacted, the three times the number of contact electrodes 7, 8, 9, 10, 23, 24, 25, 26, 27, 28, 29, 30 thus function as three electrical contacts with the same potential.

[0056] exist Figure 4 The diagram shows a cross-sectional view of the housing 6 of the power semiconductor module system 1 according to the present invention. The second contact electrode 8 of the first power semiconductor module 4 and the second contact electrode 10 of the second power semiconductor module system 5 are identifiable. The two contact electrodes 8 and 10 are guided outward through the housing 6 and bent around the edges 31 and 32 of the housing 6, respectively. The edges 31 and 32 are respectively rounded to facilitate bending of the contact electrodes 8 and 10 around the edges 31 and 32.

[0057] In the regions of notches 12 and 14, contact electrodes 8 and 10 are surrounded by electrically insulating material, and these contact electrodes are guided outward through the notches and through the housing 6. Thus, the two contact electrodes 8 and 10 are guided in notches 12 and 14, thereby effectively absorbing the forces generated during bending without damaging the connection between the contact electrodes 8 and 10 and the corresponding power semiconductor circuits 2 and 3.

[0058] In housing 6 Figure 4 In the third contact region 17 shown, two contact electrodes 8 and 10 can be superimposed on each other to contact an external voltage / current source (not shown). The thickness D1 of the housing 6 is configured such that it corresponds to the target thickness D of the housing 6. 目标 Subtract the sum of the cross-sections of the two contact electrodes 8 and 10. In other words, the housing 6 is recessed in the third contact region 17, such that when the two contact electrodes 8 and 10 are disposed in this region, an effective thickness is generated in the housing 6, which uniformly has this effective thickness outward.

[0059] Accordingly, the first contact area 15 and the second contact area 16 ( Figure 4 (Not shown in the image) The total cross-section of the first contact electrode 7 and the second contact electrode 8 of the first power semiconductor module 4 or the first contact electrode 9 and the second contact electrode 10 of the second power semiconductor module 5, relative to the target thickness D, is shown. 目标 Recessed (in) Figure 4 (Not shown in the image).

[0060] The housing 6 has a notch in the third contact area 17 into which a threaded part 33 in the form of a nut is inserted. The notch and the threaded part are configured to accommodate a screw so that the contact electrodes 8, 10 are in contact with an external voltage / current source in the third contact area 17.

[0061] In notch 12, the wall portion of notch 12 acts as a lateral guide (indicated by the arrow), through which the second contact electrode 8 of the first power semiconductor module 4 is guided outward through the housing 6. This lateral guide absorbs the force generated when the contact electrode 8 bends and specifically protects the connection between the contact electrode 8 and the power semiconductor circuit 4 from damage. Similarly, the remaining notches 11, 13, and 14 are configured for the other contact electrodes 7, 9, and 10.

Claims

1. A power semiconductor module system (1, 1'), the power semiconductor module system having a first power semiconductor module (4) and a second power semiconductor module (5) having a common housing (6), wherein, Each power semiconductor module (4, 5) has power semiconductor circuits (2, 3), and wherein the common housing (6) at least partially surrounds the two power semiconductor circuits (2, 3). Furthermore, the power semiconductor modules (4, 5) each have a first contact electrode (7, 9, 23, 25, 27, 29) and a second contact electrode (8, 10, 24, 26, 28, 30), which are electrically connected to the power semiconductor circuits (2, 3), and are guided outward through notches (11, 12, 13, 14) in the common housing (6) for the first and second contact electrodes. The common housing (6) has a first contact area (15), a second contact area (16) and a third contact area (17). In this configuration, the first contact electrode (7, 23, 27) and the second contact electrode (8, 24, 28) of the first power semiconductor module (4) are in contact with each other in the first contact area (15). In this configuration, the first contact electrode (9, 25, 29) and the second contact electrode (10, 26, 30) of the second power semiconductor module (5) are in contact with each other in the second contact area (16). Furthermore, the second contact electrodes (8, 24, 28) of the first power semiconductor module (4) and the second contact electrodes (10, 26, 30) of the second power semiconductor module (5) are in contact with each other in the third contact area (17).

2. The power semiconductor module system (1, 1') according to claim 1, wherein, The first contact electrode (7, 23, 27) and the second contact electrode (8, 24, 28) of the first power semiconductor module (4) are in contact with an external voltage / current source in the first contact area (15). Furthermore, the first contact electrode (9, 25, 29) and the second contact electrode (10, 26, 30) of the second power semiconductor module (5) are in contact with an external voltage / current source in the second contact area (16). Furthermore, the second contact electrodes (8, 24, 28) of the first power semiconductor module (4) and the second contact electrodes (10, 26, 30) of the second power semiconductor module (5) are in contact with an external voltage / current source in the third contact area (17).

3. The power semiconductor module system (1, 1') according to claim 1 or 2, wherein the power semiconductor module system has two first contact electrodes (7, 9, 23, 25, 27, 29) and two second contact electrodes (8, 10, 24, 26, 28, 30) in integer multiples and three contact regions (15, 16, 17) in multiples, wherein, The housing (6) is provided with contact electrodes (7, 8, 9, 10, 23, 24, 25, 26, 27, 28, 29, 30) and contact areas (15, 16, 17) as described in claim 1 or 2.

4. The power semiconductor module system (1, 1') according to claim 1 or 2, wherein, The first contact electrode (7, 9, 23, 25, 27, 29) and the second contact electrode (8, 10, 24, 26, 28, 30) are bent around at least one edge (31, 32) of the housing (6), respectively.

5. The power semiconductor module system (1, 1') according to claim 4, wherein, The edges (31, 32) have rounded portions to allow the contact electrodes (7, 8, 9, 10, 23, 24, 25, 26, 27, 28, 29, 30) to be easily bent.

6. The power semiconductor module system (1, 1') according to claim 1 or 2, wherein, The contact electrodes (7, 8, 9, 10, 23, 24, 25, 26, 27, 28, 29, 30) are surrounded by electrically insulating material in the region of the notch (11, 12, 13, 14), and the contact electrodes (7, 8, 9, 10, 23, 24, 25, 26, 27, 28, 29, 30) are guided outward through the notch and through the housing (6).

7. The power semiconductor module system (1, 1') according to claim 1 or 2, wherein, The housing (6) has notches in the contact areas (15, 16, 17) for inserting threaded components (33), wherein the notches and the threaded components (33) are designed to accommodate screws so that the contact electrodes (7, 8, 9, 10, 23, 24, 25, 26, 27, 28, 29, 30) are in contact with an external voltage / current source in the contact areas (15, 16, 17) on the outside of the housing (6), wherein the contact electrodes (7, 8, 9, 10, 23, 24, 25, 26, 27, 28, 29, 30) also have corresponding notches for accommodating the screws.

8. The power semiconductor module system (1, 1') according to claim 7, wherein, The notches are each constructed as elongated holes.

9. The power semiconductor module system (1, 1') according to claim 1 or 2, wherein, The housing (6) is basically constructed as a rectangle having four large longitudinal sides and two small end sides, wherein the contact area (15, 16, 17) is located in the middle region of one of the four longitudinal sides.

10. A housing for a power semiconductor module system (1, 1'), wherein, The power semiconductor module system (1, 1') is constituted according to any one of claims 1 to 9.

11. A power semiconductor module system assembly having a plurality of power semiconductor module systems (1, 1') according to any one of claims 1 to 9.

12. A method for manufacturing a power semiconductor module system (1, 1'), the method comprising: a) Manufacturing a first power semiconductor module (4) and a second power semiconductor module (5), wherein the power semiconductor modules (4, 5) respectively have power semiconductor circuits (2, 3); b) The first contact electrode (7, 9, 23, 25, 27, 29) and the second contact electrode (8, 10, 24, 26, 28, 30) are connected to the corresponding power semiconductor circuits (2, 3) by means of brazing or ultrasonic welding. c) Two power semiconductor modules (4, 5) are at least partially enclosed by a common housing (6), wherein the first contact electrodes (7, 9, 23, 25, 27, 29) and the second contact electrodes (8, 10, 24, 26, 28, 30) of the two power semiconductor modules (4, 5) are respectively guided outward through notches (11, 12, 13, 14) in the common housing (6) for the first and second contact electrodes. Furthermore, the common housing (6) has a first contact area (15), a second contact area (16), and a third contact area (17), and In this configuration, the first contact electrode (7, 23, 27) and the second contact electrode (8, 24, 28) of the first power semiconductor module (4) are in contact with each other in the first contact area (15). Furthermore, the first contact electrode (9, 25, 29) and the second contact electrode (10, 26, 30) of the second power semiconductor module (5) are in contact with each other in the second contact area (16). Furthermore, the second contact electrodes (8, 24, 28) of the first power semiconductor module (4) and the second contact electrodes (10, 26, 30) of the second power semiconductor module (5) are in contact with each other in the third contact area (17).

13. The method according to claim 12, wherein, The first contact electrode (7, 23, 27) and the second contact electrode (8, 24, 28) of the first power semiconductor module (4) are bent and together make contact with an external voltage / current source in the first contact area (15) of the common housing (6), and the first contact electrode (9, 25, 29) and the second contact electrode (10, 26, 30) of the second power semiconductor module (5) are bent and together make contact with an external voltage / current source in the second contact area (16) of the common housing (6), and the second contact electrode (8, 24, 28) of the first power semiconductor module (4) and the second contact electrode (10, 26, 30) of the second power semiconductor module (5) are bent and together make contact with an external voltage / current source in the third contact area (17) of the common housing (6), wherein the contact is achieved by means of screws.

Images