Apparatus for processing a substrate and method for processing a substrate

Abstract

A substrate processing apparatus is provided. The substrate processing apparatus includes a chamber having an internal space, a partition unit disposed in the internal space and configured to divide the internal space into a transfer space and a plurality of processing spaces in combination with the chamber, a plurality of support units disposed in each of the plurality of processing spaces and configured to support a substrate, a plurality of gas supply units disposed in each of the plurality of processing spaces and configured to supply a process gas to the substrate supported on the plurality of support units, and a transfer unit disposed in the transfer space and configured to transfer the substrate between the plurality of processing spaces.

Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Semiconductor devices are typically manufactured by repeatedly performing a series of processing steps on a silicon wafer, which serves as a substrate. For example, deposition processes can be performed to form thin films on the substrate, photolithography processes to form photoresist patterns on the thin films, and etching processes to pattern or remove the thin films.

[0003] Recently, semiconductor devices have been striving for high integration, which requires the formation of patterns with high aspect ratios (HAR). To form patterns with high aspect ratios, methods are known to combine deposition and etching processes. However, in pattern formation processes that combine deposition and etching, the process temperatures of each process differ, thus posing challenges regarding the equipment used to perform the deposition and etching processes.

[0004] In one embodiment, when using a deposition-etch composite process with the same substrate support unit in a single chamber, the temperature of the chamber or substrate support unit must be converted to the process temperature each time a process is executed. This presents several problems: components inside the chamber may be damaged by thermal shock due to temperature conversion, resulting in a shortened lifespan for either the components or the chamber itself. Furthermore, temperature conversion leads to contaminant (e.g., particles) condensation from gases remaining in the chamber, contaminating the substrate. Additionally, the increased process time due to the time required for temperature conversion and stabilization further complicates the process.

[0005] As another example, in the case of multi-stage types that process multiple substrates in a chamber, there is a problem that the robot that transports the substrates in the chamber is contaminated, and the contaminants generated by the robot cause further contamination.

[0006] As another example, if the deposition chamber for performing the deposition process and the etching chamber for performing the etching process are configured separately, temperature switching is not required. However, the chambers are opened to transfer the substrate between the deposition and etching chambers, thus altering the environment within the chambers and making it difficult to maintain optimal process conditions. Furthermore, in the case of a substrate processing apparatus with separate deposition and etching chambers, the apparatus is larger than that of the embodiments described above or the other embodiments described above, which is disadvantageous in terms of space utilization. Summary of the Invention

[0007] The present invention provides a substrate processing apparatus and a substrate processing method for effectively processing substrates.

[0008] Embodiments of the present invention provide a substrate processing apparatus and a substrate processing method for providing a substrate with high aspect ratio features by combining deposition and etching processes.

[0009] Embodiments of the present invention provide a substrate processing apparatus and a substrate processing method for simultaneously performing deposition and etching processes.

[0010] The technical objectives of this invention are not limited to those described above. Other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0011] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a chamber having an internal space; a partitioning unit disposed in the internal space and configured to combine with the chamber to divide the internal space into a transfer space and a plurality of processing spaces; a plurality of support units disposed in each of the plurality of processing spaces and configured to support a substrate; a plurality of gas supply units disposed in each of the plurality of processing spaces and configured to supply process gases to the substrate supported on the plurality of support units; and a transfer unit disposed in the transfer space and configured to transfer the substrate between the plurality of processing spaces.

[0012] In one embodiment, the chamber includes: a top wall; a bottom wall positioned opposite to the top wall; a plurality of side walls connecting the top wall and the bottom wall; a protruding wall projecting upward from the bottom wall; and a plurality of partition walls, wherein the partition unit includes: a top plate; a plurality of side plates extending downward from an outer edge of the top plate; and a partition plate extending downward from the top plate, wherein the partition plate of the partition unit faces the partition wall, and the side plate of the partition unit faces the protruding wall of the chamber.

[0013] In one embodiment, the partition unit is configured to be movable in a vertical direction within the internal space, and the partition unit is movable between a contact position in which the partition plate of the partition unit contacts the partition wall of the chamber and a separation position in which the partition plate of the partition unit separates from the partition wall of the chamber.

[0014] In one embodiment, the partitioning unit divides the internal space into the plurality of processing spaces and the transmission space at the contact location.

[0015] In one embodiment, the side panels of the partition unit include first to fourth side panels adjacent to each other, and wherein the partition panels of the partition unit include: a first partition panel, one end of which is connected to the first side panel; a second partition panel, one end of which is connected to the second side panel and the other end of which is connected to the other end of the first partition panel; a third partition panel, one end of which is connected to the third side panel; and a fourth partition panel, one end of which is connected to the second side panel and the other end of which is connected to the other end of the third partition panel, and spaced apart from the second partition panel, and wherein the plurality of processing spaces include a spaced-apart first processing space and a second processing space, wherein the first processing space is formed by a combination of the first side panel, the second side panel, the first partition panel and the second partition panel, and the second processing space is formed by a combination of the second side panel, the third side panel, the third partition panel and the fourth partition panel.

[0016] In one embodiment, different substrate processing processes are performed in the first processing space and the second processing space, wherein either a deposition process or an etching process is performed in the first processing space, and the other of the deposition process and the etching process is performed in the second processing space.

[0017] In one embodiment, the first processing space and the second processing space are positioned alternately.

[0018] In one embodiment, multiple substrates are placed in the multiple processing spaces, and different substrate processing processes are performed simultaneously in the multiple processing spaces.

[0019] In one embodiment, the partition unit includes a top plate, a purge gas supply line embedded in the side plate and the partition plate, and a gas supply source for supplying purge gas to the purge gas supply line, wherein an exhaust port of the purge gas supply line is formed at one end of the side plate and one end of the partition plate, and wherein if the partition plate is in the partition position, an air curtain is formed by supplying purge gas from the exhaust port.

[0020] In one embodiment, the partition plate of the partition unit includes: a fifth partition plate, one end of which is connected to and spaced apart from the third side plate; a sixth partition plate, one end of which is connected to the fourth side plate and the other end of which is connected to the other end of the fifth partition plate; a seventh partition plate, one end of which is connected to the first side plate and spaced apart from the first partition plate; and an eighth partition plate, one end of which is connected to the fourth side plate and the other end of which is connected to the other end of the seventh partition plate and spaced apart from the sixth partition plate, and wherein the plurality of processing spaces further includes a third processing space formed by the third side plate, the fourth side plate, the fifth partition plate and the sixth partition plate, and a fourth processing space formed by the fourth side plate, the first side plate, the seventh partition plate and the eighth partition plate.

[0021] In one embodiment, the transfer space is formed between the plurality of processing spaces, and when the separating unit is in the separated position, the transfer space transfers the substrate processed in each of the plurality of processing spaces to another processing space in a clockwise or counterclockwise direction.

[0022] In one embodiment, the plurality of processing spaces includes four or six processing spaces, and the transfer space is formed between the plurality of processing spaces.

[0023] In one embodiment, processes with different process temperatures are executed simultaneously in the plurality of processing spaces.

[0024] In one embodiment, the transfer unit includes: a central portion at which a rotation axis is coupled; and a plurality of arms extending from the central portion to the outside and supporting the substrate, wherein the number of the plurality of arms is configured to correspond to the plurality of processing spaces.

[0025] This invention provides a substrate processing method for alternately performing deposition and etching processes while a substrate sequentially moves through multiple processing spaces. The deposition and etching processes are performed simultaneously in a chamber, which is provided with multiple processing spaces separated from each other and includes a transport space having a transport unit configured to transport the substrate between the multiple processing spaces. The substrate processing method includes deposition performed in a portion of the multiple processing spaces; and etching performed in the remaining portions of the multiple processing spaces, wherein the processing spaces for performing deposition and etching are sequentially positioned, and a substrate that has undergone deposition is transported to the processing space for performing etching via the transport unit, and a substrate that has undergone etching is transported to the processing space for performing deposition via the transport unit.

[0026] In one embodiment, the chamber is divided into the plurality of processing spaces and the transfer space by the partition unit, wherein the partition unit is movable in the vertical direction.

[0027] In one embodiment, the separating unit moves between a contact position that contacts the chamber to close each of the plurality of processing spaces, a contact position that includes the plurality of processing spaces and the transfer space, and a separation position that is spaced apart from the chamber to open the plurality of processing spaces and the transfer space. If the separating unit is in the contact position, a process is performed on the substrate, and if the separating unit is in the separation position, the transfer unit transfers the substrate.

[0028] In one embodiment, the separation unit includes a purge gas supply unit embedded in the separation plate and a gas supply source for supplying purge gas to the purge gas supply line, and if the separation unit is located at the separation position, an air curtain is formed by supplying the purge gas from the separation unit.

[0029] In one implementation, the deposition and etching processes are performed at different temperatures.

[0030] In one implementation, the plurality of processing spaces is set to an even number.

[0031] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a chamber having an internal space; a partition unit disposed in the internal space and configured to combine with the chamber to divide the internal space into a transfer space and a plurality of processing spaces; a plurality of support units disposed in each of the plurality of processing spaces and configured to support a substrate; a plurality of gas supply units disposed in each of the plurality of processing spaces and configured to supply process gases to the substrate supported on the plurality of support units; and a transfer unit disposed in the transfer space and configured to transfer the substrate between the plurality of processing spaces, wherein the partition unit is configured to be movable between a contact position in which the partition unit contacts the chamber in the internal space and a separation position in which the partition unit is spaced apart from the chamber; if the partition unit is in the contact position, the partition unit divides the transfer space and the plurality of processing spaces through contact with the chamber; and if the partition unit is in the separation position, an air curtain is formed to separate the transfer space and the plurality of processing spaces.

[0032] In one embodiment, a portion of a plurality of processing spaces is configured as a processing space in which a deposition process is performed, and the remaining portion of the plurality of processing spaces is configured as a processing space in which an etching process is performed, and the processing space in which the deposition process is performed and the processing space in which the etching process is performed are positioned sequentially.

[0033] According to the embodiments conceived in this invention, the substrate can be processed effectively.

[0034] According to embodiments of the present invention, substrates with high aspect ratio characteristics can be effectively processed by combining deposition and etching processes.

[0035] According to embodiments of the present invention, by dividing a region for performing a deposition process and a region for performing an etching process, a combined deposition-etching process can be performed in the same chamber without temperature variations.

[0036] According to embodiments of the present invention, deposition and etching processes can be performed independently and simultaneously within the same chamber.

[0037] According to embodiments of the present invention, by positioning a robotic arm to move a substrate in a separate area within the same chamber, the possibility of contamination caused by the robotic arm can be minimized.

[0038] The effects of this invention are not limited to those described above. Other effects not mentioned will become apparent to those skilled in the art from the following description. Attached Figure Description

[0039] The above and other objects and features will become apparent from the following description with reference to the following figures, wherein, unless otherwise specified, the same reference numerals denote the same parts throughout the various figures, and wherein:

[0040] Figure 1 This is a plan view illustrating a substrate processing facility according to an embodiment of the present invention.

[0041] Figure 2 This is a planar cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

[0042] Figure 3 yes Figure 2 The cross-sectional perspective view of the chamber shown.

[0043] Figure 4 yes Figure 2 The bottom perspective view of the dividing unit shown.

[0044] Figure 5 yes Figure 2 The side perspective view of the partition unit shown.

[0045] Figure 6 It is shown schematically. Figure 2 A side cross-sectional view of the substrate processing apparatus in a sealed state.

[0046] Figure 7 It is shown schematically. Figure 2 A side cross-sectional view of the substrate processing apparatus with the processing space open.

[0047] Figure 8 The diagram schematically illustrates the state in which a substrate processing process is performed in a substrate processing apparatus according to an embodiment of the present invention.

[0048] Figure 9 The illustration schematically shows a state in which the substrate processing process is not performed in a substrate processing apparatus according to an embodiment of the present invention.

[0049] Figure 10 This is a plan view of the partition unit according to an embodiment of the present invention.

[0050] Figures 11 to 17 It schematically shows that in Figure 2 In a substrate processing apparatus, deposition and etching processes are alternately performed on multiple substrates.

[0051] Figure 18 It shows Figure 2 A modified embodiment of the substrate processing apparatus. Detailed Implementation

[0052] Various modifications can be made to the inventive concept, and the inventive concept can take many forms, which will be illustrated and described in detail in the accompanying drawings. However, the embodiments of the inventive concept are not intended to limit the specific forms disclosed, but it should be understood that the inventive concept includes all variations, equivalents, and substitutions included within the spirit and scope of the inventive concept. In the description of the inventive concept, a detailed description of the relevant known technology may be omitted when it may make the essence of the inventive concept unclear.

[0053] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the word “described” is intended to include the plural form unless the context clearly specifies otherwise. It should be further understood that the terms “comprising” and / or “including” as used in this specification specify the presence of the stated feature, integral, step, operation, element, and / or component, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any of the associated listed items and all combinations of one or more associated listed items. Furthermore, the term “exemplary” is intended to refer to an example or illustration.

[0054] It should be understood that although the terms "first," "second," "third," etc., can be used to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or portion from another. Therefore, without departing from the teachings of the inventive concept, the first element, component, region, layer, or portion discussed below may be referred to as the second element, component, region, layer, or portion.

[0055] In the following, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0056] In embodiments of the present invention, a process for treating substrate W using plasma or a gas different from plasma will be described as an example. In embodiments of the present invention, a process for treating substrate W by repeatedly performing deposition and etching processes will be described as an example. However, embodiments of the present invention are not limited thereto and can be applied in various ways to substrate processing processes using liquids, such as cleaning processes, ashing processes, and developing processes.

[0057] Here, substrate is a general concept that includes semiconductor components, flat panel displays (FPDs), and other substrates used to manufacture objects having circuit patterns formed on thin films. Examples of such substrates include silicon wafers, glass substrates, and organic substrates.

[0058] In the following text, reference will be made to Figures 1 to 18 The embodiments of the present invention will be described in detail.

[0059] Figure 1 This is a plan view illustrating a substrate processing facility according to an embodiment of the present invention. (Reference) Figure 1 The substrate processing facility 1 may include a transposition module 10, a processing module 20, and a loading locking module 30.

[0060] The transposition module 10 may include a loading port 120 and a transfer frame 140. The loading port 120, transfer frame 140, loading locking module 30, and processing module 20 may be arranged sequentially in one direction. Hereinafter, the arrangement direction of the loading port 120, transfer frame 140, loading locking module 30, and processing module 20 is referred to as the first direction 12, the direction perpendicular to the first direction 12 is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction 16. The third direction 16 may be a direction perpendicular to both the first direction 12 and the second direction 14.

[0061] A housing 18 for storing multiple substrates W can be mounted on the loading port 120. Multiple loading ports 120 can be provided. The multiple loading ports 120 can be arranged in a direction along the second direction 14. The multiple loading ports 120 can be arranged along the second direction 14 spaced apart from each other. Although Figure 1 The illustration shows four loading ports, but the inventive concept is not limited thereto, and the number of loading ports 120 can be increased or decreased depending on factors such as the processing efficiency of the processing module 20 and the availability of the port.

[0062] Slots (not shown) can be formed in the edge region of the supporting substrate W in the box 18. These slots may include multiple slots. The multiple slots can be spaced apart from each other along a third direction 16. Multiple substrates W are supported on the multiple slots, in which case the multiple substrates can be placed in the box 18, thus stacking them in a state of being spaced apart from each other along a third direction 16. A front-opening standard box (FOUP) can be used as the box 18.

[0063] A transfer frame 140 transfers substrate W between a box 18 mounted on a loading port 120 and a loading locking module 30. The transfer frame 140 may be arranged along a first direction 12 with the loading port 120. A transfer frame 14 may be arranged between the loading port 130 and the loading locking module 30. The transfer frame 140 may have a rotation track 142 and a rotation robot 144. The length direction of the rotation track 144 may be formed parallel to a second direction 14. The rotation robot 144 may be mounted on the rotation track 142. The rotation robot 144 may be configured to move on the rotation track 142. The rotation robot 144 may be configured to move linearly along the rotation track 142 along the second direction 14. The rotation robot 144 may include a base 144a, a body 144b, a rotation arm 144c, and a hand 144d. The base 144a may be mounted to be movable along the rotation track 142. A main body 144b can be coupled to a base 144a. The main body 144b can be configured to move along a third direction 16 on the base 144a. The main body 144b is rotatably mounted on the base 144a. A shifting arm 144c can be coupled to the main body 144b. The shifting arm 144c can be configured to move forward and backward relative to the main body 144b. The shifting arm 144c can include multiple shifting arms 44c. The multiple shifting arms 144c can be driven individually. The multiple shifting arms 144c can be stacked in a state of being spaced apart from each other along a third direction 16. When the substrate W is transferred from the processing module 20 to the cartridge 18, some of the multiple shifting arms 144c can be used. When the substrate W is transferred from the cartridge 18 to the processing module 20, the other multiple shifting arms 144c can be used. In this case, during the process of introducing or removing the substrate W by the indexing robot 144, it is possible to prevent particles generated from the substrate W before processing from adhering to the processed substrate W.

[0064] The loading locking module 30 can switch its internal atmosphere between atmospheric pressure and vacuum to transfer substrate W between the transfer frame 140 and the transfer unit 240. The loading locking module 30 can convert the atmospheric pressure atmosphere of the indexing module 10 to the vacuum atmosphere of the processing module 20, or vice versa. The loading locking module 30 can be arranged between the transfer frame 140 and the transfer unit 240. A door (not shown) for opening and closing an opening (through which substrate W is transferred) can be installed between the loading locking module 30 and the transfer frame 140. A gate valve (not shown) for opening and closing an opening (through which substrate W is transferred) can be installed between the loading locking module 30 and the transfer unit 240. The loading locking module 30 provides space for substrate W to remain before it is transferred between the transfer frame 140 and the transfer unit 240. The loading locking module may include a loading locking chamber 32 and an unloading locking chamber 34.

[0065] The loading and locking chamber 32 provides space for the substrate W, which is transferred from the indexing module 10 to the processing module 20, to temporarily reside. Before the substrate W is placed into the loading and locking chamber 32 from the indexing module 10, the loading and locking chamber 32 can maintain an atmospheric pressure atmosphere. In this case, the loading and locking chamber 32 can remain open relative to the indexing module 10 and can be closed relative to the processing module 20. That is, the door between the loading and locking chamber 32 and the indexing module 10 is open, and the gate valve between the loading and locking chamber 32 and the transfer unit 240 can remain closed. If the substrate W is placed into the loading and locking chamber 32, the internal space of the loading and locking chamber 32 can be sealed relative to each of the indexing module 10 and the processing module 20. That is, the door between the loading and locking chamber 32 and the indexing module 10, and the gate valve between the loading and locking chamber 32 and the transfer unit 240, can all remain closed. The internal space of the loading and locking chamber 32 can then be converted from an atmospheric pressure atmosphere to a vacuum atmosphere. Subsequently, with the loading locking chamber 32 closed relative to the indexing module 10, the loading locking chamber 32 can be opened relative to the processing module 20. That is, the door between the loading locking chamber 32 and the indexing module 10 can be closed, and the gate valve between the loading locking chamber 32 and the transfer unit 240 can be opened.

[0066] The unloading locking chamber 34 provides space for the substrate W, which is transferred from the processing module 20 to the transposition module 10, to temporarily reside. Before the substrate W is placed into the unloading locking chamber 34 from the processing module 20, the unloading locking chamber can be maintained under a vacuum atmosphere. In this case, the unloading locking chamber 34 can remain open relative to the processing module 20 and can be closed relative to the transposition module 10. That is, the gate valve between the unloading locking chamber 34 and the transfer unit 240 can be opened, while the door between the unloading locking chamber 34 and the transposition module 10 can remain closed. If the substrate W is placed into the unloading locking chamber 34, the internal space of the unloading locking chamber 34 can be sealed relative to both the transposition module 10 and the processing module 20. That is, the door between the unloading locking chamber 34 and the transposition module 10, as well as the gate valve between the unloading locking chamber 34 and the transfer unit 240, can both remain closed. Afterward, the internal space of the unloading locking chamber 34 can be converted from a vacuum atmosphere to an atmospheric pressure atmosphere. Subsequently, with the unloading locking chamber 34 closed relative to the processing module 20, the unloading locking chamber 34 can be opened relative to the transposition module 10. That is, the door between the unloading locking chamber 34 and the transposition module 10 can be opened, and the gate valve between the unloading locking chamber 34 and the transfer unit 240 can be closed.

[0067] The processing module 20 may include a transfer unit 220 and a substrate processing device 300.

[0068] The transfer unit 220 can transfer the substrate W between the loading locking chamber 32, the unloading locking chamber 34 and the multiple substrate processing devices 300.

[0069] The transfer unit 220 may include a transfer chamber 222. The transfer chamber 222 may have a rectangular cross-section. However, the inventive concept is not limited thereto, and the transfer chamber 222 may have various shapes, including polygonal shapes, such as a pentagonal or hexagonal cross-section. Depending on the shape of the transfer chamber 222, the substrate processing facility 1 can be classified as linear or clustered. That is, the substrate processing facility 1 according to the embodiment of the inventive concept can be arranged linearly or in a clustered manner.

[0070] The conveying unit 222 may have a conveying track 224 and a conveying robot 226. The conveying track 222 may be configured such that its longitudinal direction is parallel to a first direction 12. The conveying robot 224 may be mounted on the conveying track 224. The conveying robot 226 may be configured to move along the conveying track 224. The conveying robot 226 may be configured to move linearly along the conveying track 224 in the first direction 12. The conveying robot 224 may include a base 226a, a body 226b, a conveying arm 226c, and a hand 226d. The base 226a may be mounted to be movable along the conveying track 224. The body 226b may be coupled to the base 226a. The body 226b may be configured to be movable on the base 226a in a third direction 16. The body 226b may be rotatably mounted on the base 226a. The conveying arm 226c may be coupled to the body 226b. The transfer arm 226c can be configured to move forward and backward relative to the main body 226b. The transfer arm 226c may include multiple transfer arms 226c. Multiple transfer arms 226c can be driven individually. Multiple transfer arms 226c can be stacked with spaced apart from each other along a third direction 16. Multiple transfer arms 226c can simultaneously transfer multiple substrates W to the substrate processing apparatus 300. In one embodiment, multiple transfer arms 226c can simultaneously transfer an even number of substrates W to the substrate processing apparatus 300.

[0071] The substrate processing apparatus 300 can be connected to the transfer chamber 222. Multiple substrate processing apparatuses 300 can be connected to the transfer chamber 222. The multiple substrate processing apparatuses 300 can be located on two side surfaces of the transfer chamber 222. A gate valve can be installed between the transfer chamber 222 and the substrate processing apparatus 300 to open and close a transfer port (not shown) for inserting or removing the substrate W. A transfer space for transferring the substrate W can be formed within the transfer chamber 222. The transfer space can be configured to be in a vacuum environment.

[0072] In the following, a substrate processing apparatus 300 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0073] Figure 2 This is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention. Figure 3 yes Figure 2 The cross-sectional perspective view of the chamber shown. Figure 5 yes Figure 2 Cross-sectional perspective view of the dividing unit shown. Figure 6 It is a schematic representation of when Figure 2 A side cross-sectional view of the substrate processing apparatus when the processing space is sealed. Figure 7 It is shown schematically. Figure 2 A side cross-sectional view of the substrate processing apparatus with the processing space open. Figure 8 The illustration schematically shows the state in which a substrate processing process is performed in a substrate processing apparatus according to an embodiment of the present invention. Figure 9 The illustration schematically shows a state in which the substrate processing apparatus according to an embodiment of the present invention does not perform the substrate processing process. Figure 10 This is a schematic diagram of a partition unit according to an embodiment of the present invention. Figures 11 to 17 This is a schematic diagram of multiple substrate processing devices that alternately perform deposition and etching processes. Figure 18 It is shown Figure 2 A view of a modified embodiment of the substrate processing apparatus.

[0074] refer to Figure 2 The substrate processing apparatus 300 may include a chamber 320. An internal space 302 may be formed in the chamber 320. Multiple substrates W may be stored in the internal space 302. The cross-section of the chamber 300 may be rectangular. However, the present invention is not limited thereto, and the chamber 300 may be configured in various shapes capable of accommodating multiple substrates W.

[0075] As described below, a transfer space and multiple processing spaces are formed within the internal space 302 of the chamber 320, and multiple support units 340 supporting the substrate W and a gas supply unit 360 supplying process gas to the substrate W supported by each of the multiple support members 340 can be provided. The number of support units 340 and gas supply units 360 can be set to correspond to the number of multiple processing spaces.

[0076] The gas supply unit 360 may include a gas supply line 362 for supplying process gases and a purge gas supply line 364 mounted outside the gas supply line 362. Each of the plurality of gas supply units 360 may supply a different process gas to each processing space depending on the type of processing performed on the substrate W. In one embodiment, the gas supply unit 360 arranged in the processing space in which a deposition process is performed on the substrate may supply deposition gas to the processing space, and the gas supply unit 360 arranged in the processing space in which an etching process is performed on the substrate may supply etching gas to the corresponding processing space. If a processing process is performed on multiple substrates in each processing space, the purge gas supply line 364 may supply purge gas to the processing space to form an air curtain flow. Thus, a downward airflow is formed in the processing space, and each enclosed processing space can be kept clean. If the partition unit 400 descends to seal the plurality of processing spaces, the purge gas supply line 364 may supply purge gas to each of the plurality of processing spaces to form an air curtain flow. During this process (if the partition unit 400 descends to seal each processing space), the air curtain flow formed by the purge gas supply line 364 can guide the flow of the reactive gas supplied from the gas supply line 362 to each processing space. For example, the flow of the reactive gas can be guided so that the reactive gas is well discharged to the discharge pipe (not shown) that discharges from each processing space. Furthermore, since the air curtain flow supplied from and formed by the purge gas supply line 364 flows along the outer wall of the section defining each processing space, contamination of the outer wall of the section, such as reactive gas adhering to / adhering to the outer wall of each section, can be prevented.

[0077] If the partition unit 400 rises to open each processing space (if no processing is performed and the substrate is moved by the transfer unit), the gas curtain flow supplied from the purge gas supply line 364 can prevent the reactive gas in each processing space from flowing into the adjacent processing space, just as the gas curtain supplied from the partition unit 400 and formed.

[0078] refer to Figure 2 and Figure 3 The chamber 320 may include a top wall 322, a bottom wall 324 arranged opposite to the top wall 322, and a plurality of side walls 326 connecting the top wall 322 and the bottom wall 324. A transfer port (not shown) may be formed in any of the plurality of side walls 326, through which the substrate W is inserted and / or removed, and the transfer port may be opened and closed by the gate valve described above. The internal space 302 of the chamber 320 may be formed by combining the top wall 322, the bottom wall 324, and the plurality of side walls 326. The plurality of side walls 326 may include first to fourth side walls 3262, 3264, 3266, and 3268 that are adjacent to each other.

[0079] The chamber 320 may include a plurality of protruding walls 327 projecting upward from the bottom wall 324. The plurality of protruding walls 327 may project inwardly from a plurality of side walls 326. The plurality of protruding walls 327 may extend along the inner surfaces of the plurality of side walls 326. The plurality of protruding walls 327 may include first to fourth protruding walls 3272, 3274, 3276, and 3278. A first protruding wall 3271 may project inwardly from a first side wall 3262. A second protruding wall 3274 may project inwardly from a second side wall 3264. A third protruding wall 3276 may project inwardly from a third side wall 3266. A fourth protruding wall 3278 may project inwardly from a fourth side wall 3268. The first to fourth protruding walls 3272, 3274, 3276, and 3278 may be combined to form a rectangular ring that forms a space therein. The number of the plurality of protruding walls 327 may be configured to correspond to the side plate 420 of the partition unit 400, which will be described later.

[0080] The height of the protruding wall 327 can be set to be lower than the height of the side wall 326. In one embodiment, the protruding wall 326 can be formed to have the same height as the support unit 340, which will be described later. Alternatively, the protruding wall 327 can be formed to have a lower height than the support unit 340. Therefore, if the substrate W is conveyed by the conveying unit 380, which will be described later, interference or collision with the protruding wall 326 can be avoided.

[0081] The protruding wall 327 may face the side plate 420 of the partition unit 400, which will be described later. When the partition unit 400 moves in the vertical direction, the top surface of the protruding wall 327 may be spaced apart from the side plate 420. The first protruding wall 3272 may face the first side plate 422, the second protruding wall 3274 may face the second side plate 424, the third protruding wall 3276 may face the third side plate 426, and the fourth protruding wall 3278 may face the fourth side plate 428.

[0082] The chamber 320 may include a plurality of spacer walls 328 projecting upward from the bottom wall 324. The number of spacer walls 328 may be configured to correspond to the partition plates 430 of the partition unit 400, which will be described later. The spacer walls 328 may be positioned at a height corresponding to the protruding wall 327. The spacer walls 328 may be positioned at a height corresponding to the support unit 340. Alternatively, the spacer walls 327 may be positioned at a height lower than that of the support unit 340. Therefore, if the substrate W is conveyed by the conveying unit 380, which will be described later, interference or collision with the spacer walls 328 can be avoided.

[0083] The partition wall 328 may face the partition plate 430 of the partition unit 400, which will be described later. When the partition unit 400 moves in the vertical direction, the top surface of the partition wall 328 may be spaced apart from the partition plate 430.

[0084] The partition wall 328 may include a first partition wall 3281 and a second partition wall 3282. One end of the first partition wall 3281 is connected to a first protruding wall 3272, and one end of the second partition wall 3282 is connected to a second protruding wall 3274, and the other end is connected to the other end of the first partition wall 3281. The first partition wall 3281 may face the second protruding wall 3274. The first partition wall 3281 may be spaced apart from the second protruding wall 3274. The second partition wall 3282 may face the first protruding wall 3272. The first protruding wall 3272, the second protruding wall 3274, the first partition wall 3281, and the second partition wall 3282 may be combined to form a first processing space 303.

[0085] The first partition wall 3281 may face the first partition plate 431, which will be described later, and the second partition wall 3282 may face the second partition plate 432, which will be described later. If the partition unit 400 moves downward, the first partition wall 3281 may contact the first partition plate 431, and the second partition wall 3282 may contact the second partition plate 432. If the partition unit 400 moves upward, the first partition wall 3281 may separate from the first partition plate 431, and the second partition wall 3282 may separate from the second partition plate 432.

[0086] The partition wall 328 may include a third partition wall 3283 and a fourth partition wall 3284. One end of the third partition wall 3283 is connected to a third protruding wall 3276, and one end of the fourth partition wall 3284 is connected to a second protruding wall 3274, and the other end is connected to the other end of the third partition wall 3283. The third partition wall 3283 may face the second protruding wall 3274. The third partition wall 3283 may be spaced apart from the second protruding wall 3274. The fourth partition wall 3284 may face the third protruding wall 3276. The fourth partition wall 3284 may face the second partition wall 3282. The fourth partition wall 3284 may be spaced apart from the third protruding wall 3276. The second protruding wall 3274, the third protruding wall 3276, the third partition wall 3283, and the fourth partition wall 3284 may be combined to form a second processing space 304.

[0087] The third partition wall 3283 may face the third partition plate 433, which will be described later, and the fourth partition wall 3284 may face the fourth partition plate 434, which will be described later. If the partition unit 400 moves downward, the third partition wall 3283 may contact the third partition plate 433, and the fourth partition wall 3284 may contact the fourth partition plate 434. If the partition unit 400 moves upward, the third partition wall 3283 may separate from the third partition plate 433, and the fourth partition wall 3284 may separate from the fourth partition plate 434.

[0088] The partition wall 328 may include a fifth partition wall 3285 and a sixth partition wall 3286. One end of the fifth partition wall 3285 is connected to the third protruding wall 3276, and one end of the sixth partition wall 3286 is connected to the fourth protruding wall 3278, while the other end is connected to the other end of the fifth partition wall 3285. The fifth partition wall 3285 may face the fourth protruding wall 3278. The fifth partition wall 3285 may face the third partition wall 3283. The sixth partition wall 3286 may be spaced apart from the third protruding wall 3276. The sixth partition wall 3286 may face the third protruding wall 3276. The third protruding wall 3276, the fourth protruding wall 3278, the fifth partition wall 3285, and the sixth partition wall 3286 may be combined to form a third processing space 305.

[0089] The fifth partition wall 3285 may face the fifth partition plate 435 (described later) vertically, and the sixth partition wall 3286 may face the sixth partition plate 436 (described later) vertically. If the partition unit 400 moves downward, the fifth partition wall 3285 may contact the fifth partition plate 435, and the sixth partition wall 3286 may contact the sixth partition plate 436. If the partition unit 400 moves upward, the fifth partition wall 3285 may separate from the fifth partition plate 435, and the sixth partition wall 3286 may separate from the sixth partition plate 436.

[0090] The partition wall 328 may include a seventh partition wall 3287 and an eighth partition wall 3288. One end of the seventh partition wall 3287 is connected to the first protruding wall 3272, and one end of the eighth partition wall 3288 is connected to the fourth protruding wall 3278, while the other end is connected to the other end of the seventh partition wall 3287. The seventh partition wall 3287 may face the fourth protruding wall 3278. The seventh partition wall 3287 may face the first partition wall 3281. The eighth partition wall 3288 may be spaced apart from the first protruding wall 3272. The eighth partition wall 3288 may face the first protruding wall 3272. The first protruding wall 3272, the fourth protruding wall 3278, the seventh partition wall 3287, and the eighth partition wall 3288 may be combined to form a fourth processing space 306.

[0091] The seventh partition wall 3287 may face the seventh partition plate 437 (described later) vertically, and the eighth partition wall 3286 may face the eighth partition plate 438 (described later) vertically. If the partition unit 400 moves downward, the seventh partition wall 3287 may contact the seventh partition plate 437, and the eighth partition wall 3288 may contact the eighth partition plate 438. If the partition unit 400 moves downward, the seventh partition wall 3287 may separate from the seventh partition plate 437, and the eighth partition wall 3288 may separate from the eighth partition plate 438.

[0092] refer to Figure 2 , Figure 4 and Figure 5 The substrate processing apparatus 300 may include a partition unit 400. The partition unit 400 may be disposed in the internal space 302 of the chamber 320. The partition unit 300 may be combined with the chamber 320 to divide the internal space 302 into a plurality of processing spaces 303 to 306 and a transfer space 307.

[0093] The partition unit 400 may include a top plate 410, a side plate 420 extending downward from the outer edge of the top plate 410, and a partition plate 430 extending downward from the top plate 410.

[0094] The top plate 410 may face the top wall 322 of the chamber 320. The shape of the top plate 410 may be configured to correspond to the top wall 322 of the chamber 320. In one embodiment, the top plate 410 may be rectangular. The top plate 410 is disposed below the top wall 322 and may be spaced apart from the top wall 322.

[0095] Side plate 420 may face protruding wall 327. Side plate 420 may be disposed on protruding wall 326. Side plate 420 may vertically overlap with protruding wall 327. Side plate 420 may vertically overlap with at least a portion of protruding wall 327. The cross-sectional area of ​​side plate 420 may be smaller than the cross-sectional area of ​​protruding wall 327. The inner surface of side plate 420 may lie in the same plane as the inner surface of protruding wall 327, and the outer surface of side plate 420 may lie within the outer surface of protruding wall 327. The outer surface of side plate 420 may be positioned inwardly than the inner surface of side wall 326 of chamber 320.

[0096] The side plate 420 may include multiple side plates 420. The number of the multiple side plates 420 may be set to correspond to the protruding wall 327 of the chamber 320. In one embodiment, the multiple side plates 420 may include first side plates to fourth side plates 422, 424, 426 and 428. When the partition unit 400 moves in the vertical direction, the bottom end of the side plate 420 may contact the protruding wall 327 or may be spaced apart from the protruding wall 327.

[0097] The partition plate 430 may face the partition wall 328. The partition plate 430 may vertically overlap with the partition wall 328. The partition plate 420 may be disposed on the partition wall 327. The partition plate 440 may be disposed inside the side plate 420. The partition plate 410 may include multiple partition plates 430. The number of multiple partition plates 430 may be set to correspond to multiple partition walls 328.

[0098] Multiple partitions 430 may include a first partition 431 and a second partition 432. One end of the first partition 431 is connected to a first side plate 422, and one end of the second partition 432 is connected to a second side plate 424, while the other end is connected to the other end of the first partition 431. The first partition 431 may face the second side plate 424. The first partition 431 may be spaced apart from the second side plate 424. The first partition 431 may face a seventh partition 437. The first partition 431 may be disposed on a first partition wall 3281. The first partition 431 may vertically overlap with the first partition wall 3281. The second partition 432 may face the first side plate 422. The second partition 432 may be spaced apart from the first side plate 422. The second partition 432 may face a fourth partition 434. The second partition 432 may be spaced apart from the fourth partition 434. The second partition 432 may be disposed on the second partition wall 3282. The second partition plate 432 can be vertically overlapped with the second partition wall 3282. The first side plate 422, the second side plate 424, the first partition plate 431, and the second partition plate 432 can be combined with each other to form a first processing space 303. The first side plate 422, the second side plate 424, the first partition plate 431, and the second partition plate 432 defining the first processing space 303 can be referred to as a first section. That is, the chamber 320 can refer to a complete chamber including multiple processing spaces, and can refer to a portion (the aforementioned first section) defining each processing space divided by the partition unit 400.

[0099] The multiple partitions 430 may include a third partition 433 and a fourth partition 434. One end of the third partition 433 is connected to the third side plate 426, and one end of the fourth partition 434 is connected to the second side plate 424, while the other end is connected to the other end of the third partition 433. The third partition 433 may face the second side plate 424. The third partition 433 may be spaced apart from the second side plate 424. The third partition 433 may face the fifth partition 435. The third partition 433 may be spaced apart from the fifth partition 435. The third partition 433 may vertically overlap with the third partition wall 3283. The fourth partition 434 may face the third side plate 426. The fourth partition 434 may be spaced apart from the third side plate 426. The fourth partition 434 may face the second partition 432. The fourth partition 434 may be spaced apart from the partition facing the second partition 432. The fourth partition 434 may be disposed on the fourth partition wall 3284. The fourth partition plate 434 can vertically overlap with the fourth partition wall 3284. The second side plate 424, the third side plate 426, the third partition plate 433, and the fourth partition plate 434 can be combined with each other to form the second processing space 304. The second side plate 424, the third side plate 426, the third partition plate 433, and the fourth partition plate 434 defining the second processing space 302 can be referred to as the second section. That is, the chamber 320 can refer to a complete chamber including multiple processing spaces, and can refer to a portion defining each processing space divided by the partition unit 400 (the aforementioned second section).

[0100] The multiple partitions 430 may include a fifth partition 435 and a sixth partition 436. One end of the fifth partition 435 is connected to the third side plate 426, and one end of the sixth partition 436 is connected to the fourth side plate 428, while the other end is connected to the other end of the fifth partition 435. The fifth partition 435 may face the fourth side plate 428. The fifth partition 435 may be spaced apart from the fourth side plate 428. The fifth partition 435 may face the third partition 433. The fifth partition 435 may be spaced apart from the third partition 433. The fifth partition 435 may be disposed on the fifth partition wall 3285. The fifth partition 435 may vertically overlap with the fifth partition wall 3285. The sixth partition 436 may face the third side plate 426. The sixth partition 436 may be spaced apart from the third side plate 426. The sixth partition 436 may face the eighth partition 438. The sixth partition 436 may be spaced apart from the eighth partition 438. The sixth partition plate 436 can be disposed on the sixth partition wall 3286. The sixth partition plate 436 can vertically overlap with the sixth partition wall 3286. The third side plate 426, the fourth side plate 428, the fifth partition plate 435, and the sixth partition plate 436 can be combined with each other to form the third processing space 305. The third side plate 426, the fourth side plate 428, the fifth partition plate 435, and the sixth partition plate 436 defining the third processing space 305 can be referred to as the third section. That is, the chamber 320 can refer to a complete chamber including multiple processing spaces, and can refer to a portion defining each processing space separated by the partition unit 400 (the aforementioned third section).

[0101] The multiple partitions 430 may include a seventh partition 437 and an eighth partition 438. One end of the seventh partition 437 is connected to the first side plate 422, and one end of the eighth partition 438 is connected to the fourth side plate 428, while the other end is connected to the other end of the seventh partition 437. The seventh partition 437 faces the fourth side plate 428. The seventh partition 437 may be spaced apart from the fourth side plate 428. The seventh partition 437 may face the first partition 431. The seventh partition 437 may be spaced apart from the first partition 431. The seventh partition 437 may be disposed on the seventh partition wall 3287. The seventh partition 437 may vertically overlap with the seventh partition wall 3287. The eighth partition 438 may face the first side plate 422. The eighth partition 438 may be spaced apart from the first side plate 422. The eighth partition 438 may face the sixth partition 436. The eighth partition 438 may be spaced apart from the sixth partition 436. The eighth partition plate 438 can be disposed on the eighth partition wall 3288. The eighth partition plate 438 can vertically overlap with the eighth partition wall 3288. The fourth side plate 428, the first side plate 422, the seventh partition plate 437, and the eighth partition plate 438 can be combined with each other to form a fourth processing space. The fourth side plate 428, the first side plate 422, the seventh partition plate 437, and the eighth partition plate 438 defining the fourth processing space 306 can be referred to as the fourth section. That is, the chamber 320 can refer to a complete chamber including multiple processing spaces, and can refer to a portion (the aforementioned fourth section) defining each processing space divided by the partition unit 400. That is, the chamber 320 can refer to the entire chamber including the first to fourth sections, or can refer to each of the first to fourth sections.

[0102] refer to Figure 6 and Figure 7 The partition unit 400 can be configured to move vertically within the internal space 302. The partition unit 400 can move vertically within the internal space 302 via a drive unit (not shown). The drive unit (not shown) may include a motor. The partition unit 400 can be configured to move between a contact position where the partition plate 430 contacts the partition wall 328 and a separation position where the partition plate 430 is spaced apart from the partition wall 328. The partition unit 400 can be configured to move between a contact position where the side plate 420 contacts the protruding wall 327 and a separation position where the side plate 420 is spaced apart from the protruding wall 327. The partition unit 400 seals the processing space in the contact position and opens the processing space in the separation position.

[0103] refer to Figure 8If the partition unit 400 is in the contact position and each processing space is sealed, the set substrate processing process is performed in each processing space. In this case, the gas supply line 362 supplies the process gas used in the set substrate processing process to each processing space. Furthermore, the purge gas supply line 364 can keep each processing space clean by supplying purge gas (including process gas) to each processing space to form a downward airflow. Additionally, due to the purge gas, an air curtain is formed in each processing space, preventing process gas from flowing into other processing spaces through the small gap between the partition unit 400 and the chamber 320 via the air curtain.

[0104] refer to Figure 9 The partition unit 400 may include a purge gas supply unit 440. The purge gas supply unit 440 may include a purge gas supply line 442 and a purge gas supply source 444 that supplies purge gas to the purge gas supply line 442. The purge gas supply line 442 may be embedded in the top plate 410, multiple side plates 420, and multiple partition plates 430. The purge gas supply source 444 may supply purge gas to the purge gas supply line 442. The purge gas may be an inert gas, such as nitrogen (N2) or argon (Ar). The discharge port of the purge gas supply line 442 may be formed at the end of each of the multiple side plates 420 and at the end of each of the multiple partition plates 430. If the partition unit 400 is in the separated position, the purge gas supply unit 440 may supply purge gas through the outlet of the purge gas supply line 442. In this case, the supplied purge gas may form a gas curtain. Therefore, even if the partition unit 400 chamber 320 is separated from the plurality of protruding walls 327 and the plurality of spacer walls 328, the conveying space and the plurality of processing spaces can be kept in a separated state by an air curtain. This prevents the mixing of process gases used in each processing space. Furthermore, it prevents byproducts and foreign matter generated in each processing space after processing from flowing into other processing spaces or conveying spaces.

[0105] refer to Figures 2 to 5The internal space 302 of chamber 320 may include a transfer space and multiple processing spaces. When the partition unit 400 is in the contact position, the transfer space and the multiple processing spaces can be separated. In one embodiment, the multiple processing spaces may include first to fourth processing spaces. The first processing space 303 is separated from other spaces by contacting portions of chamber 320 including the first protruding wall 3272, the second protruding wall 3274, the first partition wall 3281, and the second partition wall 3282 with portions of partition unit 400 including the first side plate 422, the second side plate 424, the first partition plate 431, and the second partition plate 432. The second processing space 304 is separated from other spaces by contacting portions of chamber 320 including the second protruding wall 3274, the third protruding wall 3276, the third partition wall 3283, and the fourth partition wall 3284 with portions of partition unit 400 including the second side plate 424, the third side plate 426, the third partition plate 433, and the fourth partition plate 434. The fourth processing space 306 is separated from other spaces by bringing portions of the chamber 320, including the fourth protruding wall 3278, the first protruding wall 3272, the seventh partition wall 3287, and the eighth partition wall 3288, into contact with portions of the partition unit 400, including the fourth side plate 428, the first side plate 422, the seventh partition plate 437, and the eighth partition plate 438. The third processing space 305 is separated from other spaces by bringing portions of the chamber 320, including the third protruding wall 3276, the fourth protruding wall 3278, the fifth partition wall 3285, and the sixth partition wall 3286, into contact with portions of the partition unit 400, including the third side plate 426, the fourth side plate 428, the fifth partition plate 435, and the sixth partition plate 436.

[0106] A transport space 307 is formed between the first to fourth processing spaces 303 to 306. The transport space 307 may include a central region 3071, a first region 3072 between the first processing space 303 and the second processing space 304, a second region 3073 between the second processing space 304 and the third processing space 305, a third region 307 between the third processing space 305 and the fourth processing space 306, and a fourth region 3075 between the fourth processing space 306 and the first processing space 303.

[0107] A transfer unit 500 can be provided in the transfer space 307. When the separating unit 400 is in the separated position, the transfer unit 500 can transfer the substrate W. The transfer unit 500 can transfer multiple substrates W placed in each of the multiple processing spaces between the multiple processing spaces. The transfer unit 500 can transfer substrates W that have been placed in each of the multiple processing spaces and have been fully processed to an adjacent processing space. The transfer unit 500 can transfer multiple substrates W placed in each of the multiple processing spaces simultaneously. The transfer unit 500 can transfer multiple substrates W simultaneously in a clockwise or counterclockwise direction.

[0108] The transfer unit 500 may include a central portion 520 mounted in the central region of the transfer space and a plurality of arms 540 extending outward from the central portion 520 and supporting the substrate W. The central portion 520 may be rotatably configured. The central portion 520 may be configured to rotate at a predetermined angle. The central portion 520 may include a base 522, a rotation shaft 524 rotatably connected to the base 522, and a body 526 connected to the rotation shaft 524 and rotating together with the rotation shaft 526. The plurality of arms 540 are connected to the body 526 and may rotate together with the body 526 as the body 526 rotates.

[0109] The number of arms 540 is configured to correspond to the number of processing spaces. In one embodiment, if the processing spaces include four processing spaces, the multiple arms 540 may include four arms. If the processing spaces include six processing spaces, the multiple arms 540 may include six arms. An embodiment in which the multiple arms 540 include four arms will be described below.

[0110] The plurality of arms 540 may include first to fourth arms 542, 544, 546, and 548. The plurality of arms 540 may be spaced apart from each other. The first arm 542 extends from the central portion 520 to a first region of the transfer space, the second arm 544 extends from the central portion 520 to a second region of the transfer space, and the third arm 546 extends from the central portion 520 to a fourth region of the transfer space. The first arm 542 can transfer a substrate between a first processing space 303 and a second processing space 304. The second arm 544 can transfer a substrate between a second processing space 304 and a third processing space 305. The third arm 546 can transfer a substrate between a third processing space 305 and a fourth processing space 306. The fourth arm 548 can transfer a substrate between a fourth processing space 306 and a first processing space 303.

[0111] Multiple arms 540 may be provided with hands (not shown) that support the substrate W. The hands can adhere to and support the substrate W.

[0112] In the following, a substrate processing method according to an embodiment of the present invention will be described in more detail with reference to the accompanying drawings.

[0113] Figures 11 to 17 The illustration shows that in Figure 2 In a substrate processing apparatus, deposition and etching processes are alternately performed on multiple substrates.

[0114] Figures 11 to 17 The process of performing a cyclic process on a substrate placed in each of a plurality of substrate processing spaces is illustrated schematically. Figure 11 The diagram illustrates the state in which the substrate is placed in each of the multiple substrate processing spaces. Figures 12 to 13 It shows in Figure 11 The process of transferring the substrate to an adjacent processing space after the substrate processing is performed. Figure 16 and Figure 17 It shows in Figure 15 After the substrate processing is performed, the substrate is transferred to an adjacent processing space. Then, the substrate that has completed the cycle process is taken out and sent to the transfer unit 240.

[0115] Different processes can be performed in each of the first to fourth processing spaces 303 to 306. Different processes with different process temperature conditions can be performed in each of the first to fourth processing spaces 303 to 306. Different processes can be performed in any one of the first to fourth processing spaces 303 to 306 and in the other of the first to fourth processing spaces 306 to 306. Different processes can be performed in adjacent spaces of the first to fourth processing spaces 303 to 306. In one embodiment, a deposition process can be performed in the first processing space 303 and the third processing space 305, and an etching process can be performed in the second processing space 304 and the fourth processing space 306. In another embodiment, an etching process can be performed in the first processing space 303 and the third processing space 305, and a deposition process can be performed in the second processing space 304 and the fourth processing space 306.

[0116] refer to Figures 11 to 17Multiple substrates W are placed into each of the first to fourth processing spaces 303 to 306, and the multiple substrates introduced into each of the first to fourth processing spaces 303 to 306 are processed simultaneously. While the substrates W are moved sequentially in the multiple processing spaces, etching and deposition processes are performed alternately. In one embodiment, after the deposition process is performed in the first processing space 303, the first substrate W1 placed in the first processing space 303 is transferred to the second processing space 304 by the transfer unit 500. Then, after the etching process is performed in the second processing space 304, the first substrate W1 is transferred to the third processing space 305 by the transfer unit 500. Then, after the deposition process is performed in the third processing space 305, the first substrate W1 is transferred to the fourth processing space 306 by the transfer unit 500. That is, while repeating the deposition and etching processes, the first substrate W1 is sequentially transferred to the first to fourth processing spaces 303 to 306, and when the final process is completed, it is taken out to the transfer unit 240. Similarly, the second substrate W2, placed in the second processing space 304, is sequentially transferred to the second processing space 304, the third processing space 305, the fourth processing space 306, and the first processing space 303, and processed in each space. The third substrate W3, placed in the third processing space 305, is sequentially transferred to the third processing space 305, the fourth processing space 306, the first processing space 303, and the second processing space 304, and processed in each space. The fourth substrate W4, placed in the fourth processing space 306, is sequentially transferred to the fourth processing space 306, the first processing space 303, the second processing space 304, and the third processing space 305. Multiple circuit processing processes can be performed on the multiple substrates W placed in the first to fourth processing spaces 303 to 306 according to the process plan. That is, a cyclic process can be performed on the substrates W, and the cycle count can be set according to different processing purposes.

[0117] The substrate W placed in each of the first to fourth processing spaces 303 to 306 can be processed simultaneously. If the substrate processing process is performed simultaneously in the first to fourth processing spaces 303 to 306, the separation unit 400 can be positioned at the contact position. If the substrate processing process performed in the first to fourth processing spaces 303 to 306 is completed, the separation unit 400 can be moved to the separation position, and the transfer unit 500 can transfer the substrate W to the adjacent processing space.

[0118] As an example, four processing spaces are formed in the substrate processing apparatus 300 to simultaneously perform substrate processing processes on four substrates. However, multiple processing spaces can be provided in various numbers depending on conditions such as process efficiency and duty cycle. In one embodiment, the multiple processing spaces can be provided as an even number of spaces. In one embodiment, reference... Figure 16 The substrate processing apparatus 300 may include a chamber having six processing spaces.

[0119] Meanwhile, the substrate processing apparatus and substrate processing method according to the above embodiments can be controlled and executed by a controller (not shown). The configuration, storage, and management of the controller can be implemented in hardware, software, or a combination of hardware and software. The controller's file data and / or software can be stored optically or magnetically in volatile or non-volatile storage devices (e.g., read-only memory (ROM)), or stored on, for example, memory (e.g., random access memory (RAM)), memory chips, devices, or integrated circuits (e.g., optical discs (CDs)), DVDs (digital video discs), magnetic disks, or magnetic tapes. Furthermore, it can also be stored simultaneously in a machine (e.g., a computer) that can read the stored data.

[0120] Embodiments of this invention provide a substrate processing apparatus capable of simultaneously performing deposition and etching processes. A challenge with substrate processing apparatuses that combine deposition and etching processes to form patterns is that, in most cases, the temperature for each process differs, necessitating a temperature change each time a transition between deposition and etching occurs. Embodiments of this invention separate the processing space where deposition is performed and the processing space where etching is performed within the same chamber without changing the temperature, and physically separate the processing spaces where the respective processes are performed. Simultaneously, the separation unit 400 minimizes the possibility of process-induced contamination by protecting the transfer unit 500, which moves the substrate within the separated (closed) transfer area within the chamber during the process.

[0121] In an embodiment of the present invention, support units for performing both deposition and etching processes are located within the same chamber, thus eliminating the need for temperature changes and allowing for physical separation of each support unit and transfer unit during the process. This minimizes contamination issues through the movable separation unit 400. Furthermore, if the transfer unit transfers the substrate within the chamber, the separation unit 400 moves the substrate to the next support unit while the substrate can move between each support unit within the chamber. At this time, if the separation unit is raised, purge gas is supplied to the processing space through pipes or channels located inside the separation unit to prevent gases and byproducts from the deposition and etching processes from entering and mixing with nearby support units.

[0122] The effect achieved by the configuration conceived in this invention is to prevent thermal shock to the components due to temperature variations and to reduce process time because a stage separating deposition and etching is eliminated. Since the entire chamber is isolated during the process, the process of opening and closing the chamber doors for substrate transfer can be omitted, thus the internal environment of the chamber remains unchanged during the process. Therefore, optimal process conditions can be maintained throughout the entire process.

[0123] The effects of this invention are not limited to those described above. Based on the specification and drawings, those skilled in the art to which this invention pertains can clearly understand the effects not mentioned.

[0124] Although preferred embodiments of the inventive concept have been described and illustrated to date, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains may implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing apparatus, comprising: A chamber having an internal space; A partition unit is disposed in the internal space and configured to combine with the chamber to divide the internal space into a transport space and multiple processing spaces. Multiple support units are disposed in each of the multiple processing spaces and configured as a support substrate; Multiple gas supply units are disposed in each of the multiple processing spaces and configured to supply process gases to the substrate supported on the multiple support units. and A transfer unit is disposed in the transfer space and configured to transfer the substrate between the plurality of processing spaces. The chamber includes: Top wall; The bottom wall is positioned relative to the top wall; Multiple sidewalls, the multiple sidewalls connecting the top wall and the bottom wall; A protruding wall, which protrudes upward from the bottom wall; and Multiple partition walls, and The dividing unit includes: roof; Multiple side panels, the multiple side panels extending downward from the outer edge of the top plate; and A partition plate, the partition plate extending downward from the top plate, and The partition plate of the partition unit faces the partition wall, and The side plate of the partition unit faces the protruding wall of the chamber.

2. The substrate processing apparatus according to claim 1, wherein the partition unit is configured to be movable in a vertical direction within the internal space, and the partition unit is movable between a contact position and a separation position, wherein in the contact position, the partition plate of the partition unit contacts the partition wall of the chamber, and in the separation position, the partition plate of the partition unit separates from the partition wall of the chamber.

3. The substrate processing apparatus according to claim 2, wherein the partitioning unit divides the internal space into the plurality of processing spaces and the transfer space at the contact position.

4. The substrate processing apparatus of claim 1, wherein the side plate of the partition unit comprises a first side plate to a fourth side plate adjacent to each other, and wherein the partition plate of the partition unit comprises: A first partition plate, one end of which is connected to the first side plate; The second partition plate has one end connected to the second side plate and the other end connected to the other end of the first partition plate; The third partition plate, one end of which is connected to the third side plate; and A fourth partition plate, one end of which is connected to the second side plate and the other end of which is connected to the other end of the third partition plate, and spaced apart from the second partition plate, and The plurality of processing spaces includes a first processing space and a second processing space space that are spaced apart, and The first processing space is formed by a combination of the first side plate, the second side plate, the first partition plate, and the second partition plate, and The second processing space is formed by a combination of the second side plate, the third side plate, the third partition plate, and the fourth partition plate.

5. The substrate processing apparatus according to claim 4, wherein different substrate processing processes are performed in the first processing space and the second processing space, and Either a deposition process or an etching process is performed in the first processing space, and Another process, either the deposition process or the etching process, is performed in the second processing space.

6. The substrate processing apparatus according to claim 4, wherein the first processing space and the second processing space are positioned alternately.

7. The substrate processing apparatus according to claim 1, wherein a plurality of substrates are placed in the plurality of processing spaces, and Different substrate processing processes are performed simultaneously in the multiple processing spaces.

8. The substrate processing apparatus according to claim 2, wherein the partition unit includes a top plate, a purge gas supply line embedded in the side plate and the partition plate, and a gas supply source for supplying purge gas to the purge gas supply line, and The discharge port of the purging gas supply line is formed at one end of the side plate and one end of the partition plate, and If the partition plate is located at the separation position, an air curtain is formed by supplying the purge gas from the discharge port.

9. The substrate processing apparatus according to claim 4, wherein the partition plate of the partition unit comprises: The fifth partition plate, one end of which is connected to the third side plate and spaced apart from the third partition plate; The sixth partition plate, one end of which is connected to the fourth side plate and the other end of which is connected to the other end of the fifth partition plate; The seventh partition plate, one end of which is connected to the first side plate and spaced apart from the first partition plate; and The eighth partition plate, one end of which is connected to the fourth side plate and the other end of which is connected to the other end of the seventh partition plate, and is spaced apart from the sixth partition plate, and The plurality of processing spaces further includes a third processing space formed by the third side plate, the fourth side plate, the fifth partition plate and the sixth partition plate, and a fourth processing space formed by the fourth side plate, the first side plate, the seventh partition plate and the eighth partition plate.

10. The substrate processing apparatus according to claim 2, wherein the transfer space is formed between the plurality of processing spaces, and When the separating unit is in the separated position, the transfer space will transfer the substrate processed in each of the plurality of processing spaces to another processing space in a clockwise or counterclockwise direction.

11. The substrate processing apparatus according to claim 1, wherein the plurality of processing spaces comprises four processing spaces or six processing spaces, and the transfer space is formed between the plurality of processing spaces.

12. The substrate processing apparatus according to claim 1, wherein processes with different process temperatures are simultaneously performed in the plurality of processing spaces.

13. The substrate processing apparatus according to claim 1, wherein the transfer unit comprises: The central part, where the rotating shaft is attached; and Multiple arms extending from the central portion to the outside and supporting the substrate; and The number of the plurality of arms is set to correspond to the plurality of processing spaces.

14. A substrate processing method using the substrate processing apparatus according to claim 1, for alternately performing a deposition process and an etching process while a substrate sequentially moves through a plurality of processing spaces, wherein the deposition process and the etching process are performed simultaneously in a chamber within the plurality of processing spaces, and the chamber is provided with a plurality of processing spaces separated from each other and includes a transport space having a transport unit configured to transport the substrate between the plurality of processing spaces, the substrate processing method comprising: Deposition performed within a portion of the plurality of processing spaces; and Etching is performed in the remaining portions of the plurality of processing spaces; and The processing space for performing the deposition and the processing space for performing the etching are positioned sequentially, and The substrate that has undergone deposition is transferred to the processing space where the etching is performed via the transfer unit, and the substrate that has undergone etching is transferred to the processing space where the deposition is performed via the transfer unit.

15. The substrate processing method according to claim 14, wherein the chamber is divided into the plurality of processing spaces and the transfer space by the partition unit, and wherein the partition unit is movable in the vertical direction.

16. The substrate processing method of claim 15, wherein the separating unit moves between a contact position of contacting the chamber to close each of the plurality of processing spaces, a contact position of the plurality of processing spaces and the transfer space, and a separation position spaced apart from the chamber to open the plurality of processing spaces and the transfer space, and If the separating unit is located at the contact position, then the substrate is processed, and If the separating unit is located at the separation position, the conveying unit conveys the substrate.

17. The substrate processing method according to claim 16, wherein the separating unit includes a purge gas supply unit embedded in the separating plate and a gas supply source for supplying purge gas to the purge gas supply line, and If the separating unit is located at the separation position, an air curtain is formed by supplying the purge gas from the separating unit.

18. The substrate processing method according to claim 14, wherein the process temperatures of the deposition and the etching are different from each other.

19. The substrate processing method according to claim 14, wherein the plurality of processing spaces is set to an even number.

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