Test key structure for semiconductor elements

Abstract

This invention discloses a test bond structure for a semiconductor device, comprising a substrate including a first region, a second region, a third region, and a fourth region. A first isolation structure is disposed in the second region of the substrate. A second isolation structure is disposed in the fourth region of the substrate. A first gate structure includes a first linewidth and is disposed on the first region of the substrate. A second gate structure includes a second linewidth and is disposed on the third region of the substrate. A third gate structure includes the first linewidth and is disposed on the first isolation structure in the second region. A fourth gate structure includes the second linewidth and is disposed on the second isolation structure in the fourth region. The first linewidth is smaller than the second linewidth.

Description

Technical Field

[0001] This invention relates to a test bond structure for semiconductor devices, and more particularly to a test bond structure for monitoring the fabrication process of a metal gate structure for semiconductor devices. Background Technology

[0002] The fabrication process of semiconductor devices involves many steps, such as thin film deposition, photolithography, etching, and planarization. During semiconductor device fabrication, measurement steps are typically inserted at different stages of the process to measure the test bond structure on the wafer. The measured data is then analyzed to monitor the fabrication process, enabling timely detection of fabrication anomalies and ensuring that the dimensions of the circuit structure in the chip area meet design specifications. Therefore, the design of the test bond structure must accurately reflect the actual conditions of the fabrication process. Summary of the Invention

[0003] The purpose of this invention is to provide a test bond structure for semiconductor devices. More specifically, this invention provides a test bond structure for monitoring the fabrication process of the metal gate structure of semiconductor devices, which includes different gate structures disposed on a substrate and on an isolation structure. By comparing the resistance measurement results of different gate structures, the influence of fabrication process variables at different stages on the gate resistance can be distinguished, thereby effectively monitoring the fabrication process.

[0004] A test bond structure for a semiconductor device according to an embodiment of the present invention includes a substrate, comprising a first region, a second region, a third region, and a fourth region. A first isolation structure is disposed in the second region of the substrate. A second isolation structure is disposed in the fourth region of the substrate. A first gate structure, including a first linewidth, is disposed on the first region of the substrate. A second gate structure, including a second linewidth, is disposed on the third region of the substrate. A third gate structure, including the first linewidth, is disposed on the first isolation structure in the second region. A fourth gate structure, including the second linewidth, is disposed on the second isolation structure in the fourth region. The first linewidth is smaller than the second linewidth.

[0005] A test bond structure for a semiconductor device according to another embodiment of the present invention includes a substrate comprising a first region, a second region, a third region, and a fourth region. A plurality of first isolation structures are disposed in the second region of the substrate. A plurality of second isolation structures are disposed in the fourth region of the substrate. A first gate structure, including a first linewidth, is disposed on the first region of the substrate. A second gate structure, including a second linewidth, is disposed on the third region of the substrate. A third gate structure, including the first linewidth, is disposed on one of the plurality of first isolation structures in the second region. A fourth gate structure, including the second linewidth, is disposed on the fourth region of the substrate and spans across a plurality of the plurality of second isolation structures. The first linewidth is smaller than the second linewidth. Attached Figure Description

[0006] Figure 1 This is a planar schematic diagram of a semiconductor element according to an embodiment of the present invention;

[0007] Figure 2 This is a planar schematic diagram of the test bond structure of a semiconductor device according to an embodiment of the present invention;

[0008] Figure 3 for Figure 2 A cross-sectional schematic diagram of the test bond structure;

[0009] Figure 4 This is a planar schematic diagram of the test bond structure of a semiconductor element according to another embodiment of the present invention;

[0010] Figure 5 for Figure 4 A cross-sectional schematic diagram of the test bond structure.

[0011] Explanation of main component symbols

[0012] W chip

[0013] R1 chip area

[0014] R2 Cutting Zone

[0015] R3 Test Keyboard

[0016] 100 Test Bond Structure

[0017] 102 base

[0018] 104 First isolation structure

[0019] 106 Second isolation structure

[0020] 108 interlayer dielectric layer

[0021] 120 Contact plug

[0022] 102a surface

[0023] 104a Top surface

[0024] 106a Top surface

[0025] 108a surface

[0026] 10 First gate structure

[0027] 20 Second gate structure

[0028] 30 Third gate structure

[0029] 40 Fourth gate structure

[0030] 50 Fifth gate structure

[0031] 60. Dummy gate structure

[0032] 10a Top surface

[0033] 20a Top surface

[0034] 30a Top surface

[0035] 40a Top surface

[0036] 50a Top surface

[0037] T1 thickness

[0038] T2 thickness

[0039] T3 thickness

[0040] T4 thickness

[0041] T4' thickness

[0042] T5 thickness

[0043] W1 First line width

[0044] W2 Second Line Width

[0045] A First District

[0046] B Second District

[0047] C Third District

[0048] D Fourth District

[0049] E Fifth District Detailed Implementation

[0050] To enable those skilled in the art to further understand the present invention, preferred embodiments are described below, along with the accompanying drawings, to explain in detail the composition and desired effects of the invention. It should be understood that the following embodiments can be modified by substituting, recombining, or mixing features from several different embodiments to achieve other embodiments without departing from the spirit of the invention.

[0051] To facilitate reader comprehension and maintain the simplicity of the accompanying drawings, many of the accompanying drawings depict only a portion of the display device, and specific elements in the drawings are not drawn to scale. Furthermore, the number and dimensions of each element in the drawings are for illustrative purposes only and are not intended to limit the scope of the invention. In the drawings, identical or similar elements can be represented by the same reference numerals. The description of the vertical relationships between relative elements in the drawings should be understood by those skilled in the art to refer to the relative positions of objects; therefore, the same components can be flipped to present the same information, and all of this should fall within the scope disclosed in this specification.

[0052] In this specification, "wafer," "substrate," or "base plate" means any structure having an exposed surface on which material can be deposited to fabricate an integrated circuit structure according to embodiments of the present invention. It should be understood that "substrate" includes, but is not limited to, semiconductor wafers. In the context of fabrication processes, "substrate" also means a semiconductor structure containing a layer of material fabricated thereon.

[0053] Please refer to Figure 1 The diagram illustrates a planar schematic of a semiconductor device according to an embodiment of the present invention. The semiconductor device is, for example, a wafer W, which may include multiple chip regions R1 and dicing channels R2 located between the chip regions R1. Chip regions R1 are areas for fabricating integrated circuit chips. Dicing channels R2 are used to dice the wafer W to separate the individual chip regions R1 after the wafer W fabrication process is completed. Various alignment mark patterns, monitoring patterns, and test key structures used in the wafer W manufacturing process may be provided within the dicing channels R2. Figure 1 As shown, the dicing area R2 of wafer W may include multiple test key areas R3, respectively located near the center and edge of the wafer. The test key areas R3 may contain test key structures, allowing measurement steps to be inserted at different fabrication stages to measure the test key structures. The measured data is then analyzed to monitor the fabrication process, enabling timely detection of fabrication anomalies and ensuring that the integrated circuit structure on wafer W meets required specifications.

[0054] Please refer to Figure 2 and Figure 3 . Figure 2 The diagram shown is a plan view of a test bond structure 100 of a semiconductor element according to an embodiment of the present invention. Figure 3 The drawing is shown as Figure 2 A cross-sectional schematic diagram of the test bond structure 100. Semiconductor elements, for example, are... Figure 1 The test bond structure 100 of the wafer W shown can be disposed in the test bond region R3 within the dicing region R2 of the wafer W. For the sake of simplicity, Figure 2 Not shown Figure 3 Interlayer dielectric layer 108, Figure 3 Not shown Figure 2 120 contact plugs.

[0055] like Figure 2 and Figure 3 As shown, the test bond structure 100 includes a substrate 102, which includes a first region A, a second region B, a third region C, a fourth region D, and a fifth region E. A first isolation structure 104 and a second isolation structure 106 are respectively disposed in the second region B and the fourth region D of the substrate 102. An interlayer dielectric layer 108 is disposed on the substrate 102 and completely covers the first region A, the second region B, the third region C, the fourth region D, and the fifth region E. A first gate structure 10 and a second gate structure 20 are respectively disposed in the interlayer dielectric layer 108 on the first region A and the third region C of the substrate 102. A third gate structure 30 and a fourth gate structure 40 are respectively disposed on the first isolation structure 104 in the second region B and the second isolation structure 106 in the fourth region D, and are located in the interlayer dielectric layer 108. A fifth gate structure 50 is disposed in the interlayer dielectric layer 108 on the fifth region E of the substrate 102. A gate dielectric layer 52 is included between the fifth gate structure 50 and the substrate 102. Each of the first gate structure 10, the second gate structure 20, the third gate structure 30, the fourth gate structure 40, and the fifth gate structure 50 has at least one contact plug 120 at both ends. The contact plug 120 is electrically connected to the gate structures and is used to measure the resistance of the gate structures.

[0056] The substrate 12 may be, for example, a silicon substrate, a silicon-on-insulator (SOI) substrate, a silicon-germanium substrate, a group III-V semiconductor substrate, or a substrate made of other suitable materials. The first isolation structure 104, the second isolation structure 106, and the interlayer dielectric layer 108 may include dielectric materials, such as silicon oxide (SiO2), silicon nitride (SiN), silicon oxynitride (SiON), silicon carbide (SiCN), nitrogen-doped silicon carbide (NDC), low-k dielectric materials such as fluorinated silica glass (FSG), silicon carbide oxide (SiCOH), spin-on glass, porous low-k dielectric material, organic polymer dielectric material, or combinations of the above materials, but are not limited thereto.

[0057] The first isolation structure 104 and the second isolation structure 106 may be shallow trench isolation (STI) structures. The fabrication method may include defining isolation trenches (not shown) in the second region B and the fourth region D of the substrate 102 using photolithography and etching processes, including patterns of the first isolation structure 104 and the second isolation structure 106. Next, a dielectric layer (e.g., silicon oxide) is deposited on the substrate 102 to fill the isolation trenches. Then, a chemical mechanical polishing (CMP) process is performed to remove the dielectric layer outside the isolation trenches until the surface 102a of the substrate 102 is exposed, thereby obtaining the first isolation structure 104 and the second isolation structure 106 composed of the dielectric layer remaining in the isolation trenches. In some embodiments, the first isolation structure 104 and / or the second isolation structure 106 may be etched back after the CMP process to adjust the step difference between the top surfaces of the first isolation structure 104 and the second isolation structure 106 and the surface 102a of the substrate 102. According to one embodiment of the present invention, the first isolation structure 104 may have a positive step difference, that is, the top surface 104a is higher than the surface 102a of the substrate 102. According to one embodiment of the present invention, the second isolation structure 106 will have an additional thickness removed in the fabrication process after the chemical mechanical polishing process (e.g., etch back, wet cleaning, and / or gate dielectric layer etching), and may even have a negative step difference, that is, the top surface 106a of the second isolation structure 106 is lower than the top surface 104a of the first isolation structure 104, and also lower than the surface 102a of the substrate 102, such as... Figure 3 The situation is shown.

[0058] It should be noted that, Figure 3 The top surface 104a of the first isolation structure 104 shown is higher than the surface 102a of the substrate 102, and the top surface 106a of the second isolation structure 106 is lower than the surface 102a of the substrate 102. This is one embodiment of the present invention, but the present invention is not limited thereto, and other variations in height are also within the scope of the present invention. In some embodiments, the top surface 104a of the first isolation structure 104 and the top surface 106a of the second isolation structure 106 may be located at the same horizontal level and slightly higher than the surface 102a of the substrate 102. In other embodiments, the top surface 104a of the first isolation structure 104 and the top surface 106a of the second isolation structure 106 may be located at the same horizontal level and lower than the surface 102a of the substrate 102. In still other embodiments, the top surface 106a of the second isolation structure 106 may be higher than the surface 102a of the substrate 102, and the top surface 104a of the first isolation structure 104 may be lower than the surface 102a of the substrate 102.

[0059] The first gate structure 10, second gate structure 20, third gate structure, fourth gate structure 40, and fifth gate structure 50 may include metal gates. The fabrication method may include forming a plurality of dummy gate structures on a substrate 102, each corresponding to a predetermined position size of the first gate structure 10, second gate structure 20, third gate structure, fourth gate structure 40, and fifth gate structure 50. Then, an interlayer dielectric layer 108 is formed to completely cover the dummy gate structures. Next, a chemical mechanical polishing (CMP) process is performed to remove portions of the interlayer dielectric layer 108 until the top surfaces of the dummy gate structures are exposed. Following this, a replacement metal gate (RMG) process is performed, which includes first removing the exposed dummy gate structures to form a plurality of gate trenches (not shown) in the interlayer dielectric layer 108, and then forming a gate material layer (not shown) to cover the interlayer dielectric layer 108 and fill the gate trenches. The gate material layer may include a multilayer structure, such as a barrier layer, a work function metal layer, and a low-resistivity metal layer. The barrier layer material may include, but is not limited to, titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN). The work function metal layer material may include, but is not limited to, titanium aluminum nitride (TiAl), zirconium aluminum nitride (ZrAl), tungsten aluminum nitride (WAl), tantalum aluminum nitride (TaAl), hafnium aluminum nitride (HfAl), TiAlC (titanium aluminum carbide), titanium nitride (TiN), tantalum nitride (TaN), or tantalum carbide (TaC). The low-resistivity metal layer material may include, but is not limited to, low-resistivity materials such as copper (Cu), aluminum (Al), tungsten (W), titanium aluminum alloy (TiAl), cobalt tungsten phosphide (CoWP), or combinations thereof. In some embodiments, a high-k dielectric layer (not shown) may be formed before forming the gate material layer. Materials for high-k dielectric layers may include hafnium oxide (HfO2), hafnium silicate oxide (HfSiO4), hafnium silicate nitride oxide (HfSiON), aluminum oxide (Al2O3), lanthanum oxide (La2O3), tantalum oxide (Ta2O5), yttrium oxide (Y2O3), zirconium oxide (ZrO2), strontium titanate (SrTiO3), zirconium silicate oxide (ZrSiO4), hafnium zirconium oxide (HfZrO4), strontium bismuth tantalum oxide (SrBi2Ta2O9, SBT), lead zirconate titanate (PZT), barium strontium titanate (BST), or combinations thereof, but are not limited thereto.After the gate trenches are filled with gate material layers, a chemical mechanical polishing process is then performed to remove excess gate material layers and high-k dielectric layers outside the gate trenches until the surface 108a of the interlayer dielectric layer 108 is exposed, thereby obtaining a first gate structure 10, a second gate structure 20, a third gate structure 30, a fourth gate structure 40, and a fifth gate structure 50 composed of the gate material layers remaining in the gate trenches.

[0060] Dummy gate structures 60 can be provided on both sides of the first gate structure 10, the second gate structure 20, the third gate structure, the fourth gate structure 40, and the fifth gate structure 50, respectively. The dummy gate structures 60 can be formed using the same manufacturing process (e.g., a metal gate replacement process) as the first gate structure 10, the second gate structure 20, the third gate structure, the fourth gate structure 40, and the fifth gate structure 50, and use the same materials as the first gate structure 10, the second gate structure 20, the third gate structure, the fourth gate structure 40, and the fifth gate structure 50.

[0061] like Figure 3 As shown, the top surface 10a of the first gate structure 10, the top surface 20a of the second gate structure 20, the top surface 30a of the third gate structure 30, the top surface 40a of the fourth gate structure 40, and the top surface 50a of the fifth gate structure 50 are exposed from the surface 108a of the interlayer dielectric layer 108. The first gate structure 10 and the third gate structure 30 may include a first linewidth W1, and the second gate structure 20 and the fourth gate structure 40 may include a second linewidth W2, wherein the first linewidth W1 is smaller than the second linewidth W2. According to one embodiment of the present invention, the second linewidth W2 may be 10 to 60 times the first linewidth W1, but is not limited thereto. According to one embodiment of the present invention, the fifth gate structure 50 may include the first linewidth W1.

[0062] In some embodiments, the chemical mechanical polishing (CMP) process for fabricating metal gates may exhibit a loading effect for gate structures with different linewidths. This loading effect causes the low-resistivity metal layer of a gate structure with a larger linewidth to be removed and recessed more quickly than that of a gate structure with a smaller linewidth, resulting in the top surfaces of gate structures with different linewidths being located at different horizontal heights. For example... Figure 3As shown, the top surface 10a of the first gate structure 10, the top surface 30a of the third gate structure 30, and the top surface 50a of the fifth gate structure 50 can be located at the same horizontal height, which is approximately flush with the surface 108a of the interlayer dielectric layer 108. The top surface 20a of the second gate structure 20 and the top surface 40a of the fourth gate structure 40 are recessed downwards from the surface 108a of the interlayer dielectric layer 108 to the same horizontal height, both being lower than the surface 108a of the interlayer dielectric layer 108. That is, the top surface 20a of the second gate structure 20 and the top surface 40a of the fourth gate structure 40 are lower than the top surface 10a of the first gate structure 10, the top surface 30a of the third gate structure 30, and the top surface 50a of the fifth gate structure 50. According to an embodiment of the present invention, the thickness T1 of the first gate structure 10 can be greater than the thickness T2 of the second gate structure 20 (approximately the thickness of the middle portion of the second gate structure 20). According to one embodiment of the present invention, when the top surface 104a of the first isolation structure 104 is higher than the surface 102a of the substrate 102, the thickness T3 of the third gate structure 30 can be less than the thickness T1 of the first gate structure 10. According to one embodiment of the present invention, when the top surface 106a of the second isolation structure 106 is lower than the surface 102a of the substrate 102, the thickness T4 of the fourth gate structure 40 (approximately the thickness of the middle portion of the fourth gate structure 40) can be greater than the thickness T2 of the second gate structure 20. According to one embodiment of the present invention, due to the influence of the thickness of the gate dielectric layer 52, the thickness T5 of the fifth gate structure 50 can be less than the thickness T1 of the first gate structure 10.

[0063] The test bond structure 100 provided by this invention can be used to monitor the fabrication process of the gate structure of a semiconductor device. More specifically, it can monitor related fabrication process steps, such as those affecting the linewidth and thickness of the gate structure, based on the measured resistance data of the first gate structure 10, the second gate structure 20, the third gate structure 30, the fourth gate structure 40, and the fifth gate structure 50. It is noteworthy that this invention can not only obtain the resistance of large-linewidth gate structures (e.g., the second gate structure 20 and the fourth gate structure 40) and small-linewidth gate structures (e.g., the first gate structure 10, the third gate structure 30, and the fifth gate structure 50) located on the substrate or isolation structure, but also, by cross-comparing the measured resistance data, further clarify the influence of different fabrication process variables such as the step height of the structure, the loading effect of chemical mechanical polishing in the replacement metal gate fabrication process, and the thickness of the gate dielectric layer on the resistance data, so as to accurately adjust the fabrication process accordingly. For example, the resistance difference between the first gate structure 10 and the third gate structure 30, or between the second gate structure 20 and the fourth gate structure 40, can reveal the impact of the step difference in the isolation structure, allowing adjustments to be made to relevant manufacturing steps (e.g., chemical mechanical polishing of the isolation structure, etch-back, wet cleaning, and / or etching of the gate dielectric layer). As another example, the resistance difference between the first gate structure 10 and the second gate structure 20 can reveal the impact of the chemical mechanical polishing loading effect in the metal gate fabrication process, allowing for corresponding adjustments. As yet another example, the resistance difference between the first gate structure 10 and the fifth gate structure 50 can reveal the impact of the thickness of the gate dielectric layer 52, allowing for corresponding adjustments. Therefore, the test bond structure 100 of the present invention can provide positive assistance in related manufacturing process control and / or manufacturing process adjustments.

[0064] The following description will focus on different embodiments of the present invention. For simplicity, the description will primarily focus on the differences between the embodiments, without repeating the similarities. Identical elements in each embodiment are designated with the same reference numerals to facilitate comparison between embodiments.

[0065] Please refer to Figure 4 and Figure 5 . Figure 4 The diagram shown is a plan view of a test bond structure 100 of a semiconductor element according to another embodiment of the present invention. Figure 5 The drawing is shown as Figure 4 A cross-sectional schematic diagram of the test key structure 100. For the sake of simplicity, Figure 4 Not shown Figure 5 Interlayer dielectric layer 108, Figure 5 Not shown Figure 4 The contact plug 120. This embodiment is similar to... Figure 2 and Figure 3 The main difference in the illustrated embodiment is that, in this embodiment, the second region B of the substrate 102 may include a plurality of first isolation structures 104, and the fourth region D may include a plurality of second isolation structures 106. Figure 4 As shown in the plan view, the first isolation structure 104 and the substrate 102 are alternately arranged, and the second isolation structure 106 and the substrate 102 are alternately arranged. The third gate structure 30 is disposed on one of the first isolation structures 104, and the fourth gate structure 40 spans multiple second isolation structures 106. The dummy gate structures 60 on both sides of the third gate structure 30 are respectively located on one of the first isolation structures 104. The dummy gate structures 60 on both sides of the fourth gate structure 40 are respectively located on one of the second isolation structures 106. As mentioned above, there may be a step difference between the top surface 104a of the first isolation structure 104 and the top surface 106a of the second isolation structure 106 and the surface 102a of the substrate 102. For example, as Figure 5 As shown, the first isolation structure 104 can have a positive step difference, that is, the top surface 104a is higher than the surface 102a of the substrate 102. Therefore, when the top surface 10a of the first gate structure 10 and the top surface 30a of the third gate structure 30 are at the same horizontal height (for example, approximately flush with the surface 108a of the interlayer dielectric layer 108), the thickness T3 of the third gate structure 30 will be less than the thickness T1 of the first gate structure 10. For another example, such as... Figure 5 As shown, the second isolation structure 106 can have a positive step difference, that is, the top surface 106a is higher than the surface 102a of the substrate 102. In this case, the thickness T4 of the portion of the fourth gate structure 40 directly above the second isolation structure 106 will be less than the thickness T2 of the second gate structure 20, and the thickness T4' of the portion of the fourth gate structure 40 directly above the substrate 102 will be approximately equal to the thickness T2 of the second gate structure 20. Compared to Figure 2 and Figure 3 In this embodiment, the height difference between the large-area first isolation structure 104 and the small-area first isolation structure 104 and the second isolation structure 106, which are alternately arranged with the substrate 102, is more stable and less susceptible to drastic changes due to process deviations in related manufacturing steps (e.g., chemical mechanical polishing of the isolation structure, etch-back, wet cleaning, and / or etching of the gate dielectric layer). Therefore, the measurement data obtained by the test bond structure 100 in this embodiment can better highlight the impact of the chemical mechanical polishing loading effect of the metal gate fabrication process, enabling timely adjustment of the fabrication process.

[0066] The above description is only a preferred embodiment of the present invention. All equivalent changes and modifications made in accordance with the claims of the present invention should be included within the scope of the present invention.

Claims

1. A test bond structure for a semiconductor device, comprising: The base includes the first, second, third, and fourth zones; The first isolation structure is disposed in the second region of the substrate; The second isolation structure is disposed in the fourth region of the substrate; A first gate structure includes a first linewidth and is disposed on the first region of the substrate; A second gate structure, including a second linewidth, is disposed on the third region of the substrate; The third gate structure includes the first linewidth and is disposed on the first isolation structure of the second region; as well as A fourth gate structure includes the second linewidth and is disposed on the second isolation structure of the fourth region, wherein the first linewidth is smaller than the second linewidth.

2. The test bond structure of the semiconductor element as claimed in claim 1, wherein the second linewidth is 10 to 60 times the first linewidth.

3. The test bond structure of the semiconductor device as claimed in claim 1, further comprising an interlayer dielectric layer disposed on the first region, the second region, the third region and the fourth region of the substrate, wherein the top surfaces of the first gate structure, the second gate structure, the third gate structure and the fourth gate structure are respectively exposed from the surface of the interlayer dielectric layer.

4. The test bond structure of the semiconductor device as claimed in claim 1, wherein the top surface of the first gate structure and the top surface of the third gate structure are at the same horizontal height, and the top surface of the second gate structure and the top surface of the fourth gate structure are at the same horizontal height and are lower than the top surface of the first gate structure and the top surface of the third gate structure.

5. The test bond structure of the semiconductor device as claimed in claim 4, wherein the thickness of the first gate structure is greater than the thickness of the second gate structure.

6. The test bond structure of the semiconductor element as claimed in claim 4, wherein the top surface of the first isolation structure is higher than the surface of the substrate, and the thickness of the third gate structure is less than the thickness of the first gate structure.

7. The test bond structure of the semiconductor device as claimed in claim 4, wherein the top surface of the second isolation structure is lower than the surface of the substrate, and the thickness of the fourth gate structure is greater than the thickness of the second gate structure.

8. The test bond structure of the semiconductor device as claimed in claim 1, wherein the substrate further includes a fifth region, and the test bond structure of the semiconductor device further includes: A fifth gate structure, including the first linewidth, is disposed on the fifth region of the substrate; as well as A gate dielectric layer is disposed between the fifth gate structure and the substrate, wherein the top surface of the fifth gate structure and the top surface of the first gate structure are at the same horizontal height, and the thickness of the fifth gate structure is less than the thickness of the first gate structure.

9. The test bond structure of the semiconductor device as claimed in claim 1, wherein the first gate structure, the second gate structure, the third gate structure and the fourth gate structure are metal gates.

10. A test bond structure for a semiconductor device, comprising: The base includes the first, second, third, and fourth zones; Multiple first isolation structures are disposed in the second region of the substrate; Multiple second isolation structures are disposed in the fourth region of the substrate; A first gate structure includes a first linewidth and is disposed on the first region of the substrate; A second gate structure, including a second linewidth, is disposed on the third region of the substrate; The third gate structure includes the first linewidth and is disposed on one of the plurality of first isolation structures in the second region; as well as A fourth gate structure, including the second linewidth, is disposed on the fourth region of the substrate and spans across a plurality of the plurality of second isolation structures, wherein the first linewidth is smaller than the second linewidth.

11. The test bond structure of the semiconductor element as claimed in claim 10, wherein the second linewidth is 10 to 60 times the first linewidth.

12. The test bond structure of the semiconductor device as claimed in claim 10, further comprising an interlayer dielectric layer disposed on the first region, the second region, the third region, and the fourth region of the substrate, wherein the top surfaces of the first gate structure, the second gate structure, the third gate structure, and the fourth gate structure are exposed from the surface of the interlayer dielectric layer.

13. The test bond structure of the semiconductor device as claimed in claim 10, wherein the top surface of the first gate structure and the top surface of the third gate structure are at the same horizontal height, and the top surface of the second gate structure and the top surface of the fourth gate structure are at the same horizontal height and are lower than the top surface of the first gate structure and the top surface of the third gate structure.

14. The test bond structure of the semiconductor device as claimed in claim 13, wherein the thickness of the first gate structure is greater than the thickness of the second gate structure.

15. The test bond structure of the semiconductor device as claimed in claim 13, wherein the top surfaces of the plurality of first isolation structures are all higher than the surface of the substrate, and the thickness of the third gate structure is less than the thickness of the first gate structure.

16. The test bond structure of the semiconductor element as claimed in claim 13, wherein the top surfaces of the plurality of second isolation structures are all higher than the surface of the substrate, the thickness of the portion of the fourth gate structure located on the plurality of second isolation structures is less than the thickness of the second gate structure, and the thickness of the portion of the fourth gate structure located on the substrate is equal to the thickness of the second gate structure.

17. The test bond structure of the semiconductor device as claimed in claim 10, wherein the first gate structure, the second gate structure, the third gate structure and the fourth gate structure are metal gates.

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