一种氧化镓异质结隧穿场效应晶体管及其制备方法

By employing a heterojunction pn junction and a high-dielectric-constant oxide gate dielectric in a gallium oxide heterojunction tunneling field-effect transistor, the problem of p-type doping in gallium oxide devices is solved, enabling high-speed and low-power logic switching circuit applications.

CN116072706BActive Publication Date: 2026-07-17NANJING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NANJING UNIV
Filing Date
2023-02-02
Publication Date
2026-07-17

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Abstract

本发明提出了氧化镓异质结隧穿场效应晶体管及其制备方法，晶体管包括p型半导体衬底、绝缘阻隔层、n型氧化镓沟道层、导电电极层、高介电常数氧化物栅介质层，所述p型半导体衬底上方设置绝缘阻隔层，所述阻隔层之间以及上方设置所述n型氧化镓沟道层，所述n型氧化镓沟道层上设置所述高介电常数氧化物介质层，在所述绝缘阻隔层一侧、n型氧化镓沟道层及高介电常数氧化物介质层上方设置所述导电电极层。采用薄层高介电常数氧化物作为栅介质，易于从氧化物半导体结处的p型载流子的外部源吸引空穴，发生带间隧穿，突破传统MOSFET器件的玻尔兹曼限制，使得亚阈值摆幅降低至60mV / decade以下。本发明在高速度和低功耗逻辑开关电路中具有重要的应用前景。
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