存储器器件及用于搜索存储器器件的方法
By using no more than two ferroelectric transistors in the CAM cell, the problems of large footprint and high power consumption of existing CAM devices are solved, realizing a compact, low-power memory device that supports applications without continuous power supply.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2022-04-13
- Publication Date
- 2026-07-17
AI Technical Summary
Existing content-addressable memory (CAM) devices have a large footprint and high power consumption due to the presence of multiple transistors in each cell, which limits their widespread use in non-dedicated systems.
By employing a design where each CAM unit contains no more than two ferroelectric transistors, data storage and retrieval are achieved through threshold voltage programming and bit-by-bit comparison of the ferroelectric storage elements. This reduces the number of transistors and improves the compactness and low power consumption of the storage device.
This achieves a smaller footprint and lower cost per bit, while the memory device can operate normally without a continuous power supply due to the non-volatile nature of ferroelectric transistors.
Smart Images
Figure CN116092538B_ABST