A pretreatment device and a method for cleaving slides

Abstract

This disclosure provides a pre-processing apparatus and method for dicing semiconductors. The pre-processing apparatus includes a support section and a guide mark forming section. The support section supports the semiconductor structure to be processed, and the guide mark forming section forms guide marks on the surface of the semiconductor structure. The guide marks guide the semiconductor structure to cleave along the guide marks during dicing. The pre-processing apparatus of this disclosure can form guide marks on the semiconductor structure before dicing, so that the semiconductor structure is guided to cleave along the guide marks during subsequent dicing. Because the guide marks assist in dicing, the semiconductor structure can be accurately diced at the desired location, ensuring the perpendicularity of the cross-section of the obtained semiconductor structure, and enabling precise dicing of small-sized target points. Furthermore, because the guide marks are pre-set, the subsequent dicing blade does not require a large force to dice the semiconductor structure, thereby avoiding chipping caused by collision between the dicing blade and the semiconductor structure.

Description

Technical Field

[0001] This disclosure relates to the field of dicing technology, and more particularly to a pretreatment apparatus and a dicing method for dicing. Background Technology

[0002] In chip manufacturing, structural analysis is often required, and cross-sectional analysis is a widely used method. Traditional cross-sectional analysis methods, such as using a dicing machine to directly cut the target points of the chip, are prone to chipping and cannot be used for small target points. Summary of the Invention

[0003] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0004] The first aspect of this disclosure provides a pretreatment apparatus for cleaving specimens, the pretreatment apparatus comprising:

[0005] The support section is used to support the semiconductor structure to be processed;

[0006] A guide mark forming section is used to form guide marks on the surface of the semiconductor structure, the guide marks being used to guide the chip to split along the guide marks during die cleaving.

[0007] According to some embodiments of this disclosure, the guide mark forming portion includes:

[0008] A dotting device for dotting the semiconductor structure to form dot marks on the semiconductor structure;

[0009] A position adjustment device is used to adjust the relative position of the carrier and the dotting device so that the dotting device forms a plurality of dots at different positions on the semiconductor structure, and the plurality of dots constitute the guide marks.

[0010] According to some embodiments of this disclosure, the dotting device includes:

[0011] A laser dotting section is used to laser-dot the semiconductor structure to form the dot marks;

[0012] The pressure head is used to form the dot marks on the surface of the semiconductor structure by pressing against the semiconductor structure.

[0013] According to some embodiments of this disclosure, the depth of the laser-dotted marks formed on the semiconductor structure is 0.1 to 1 μm;

[0014] The depth of the dot marks formed on the semiconductor structure by the dotting part of the pressure head is 1 to 10 μm.

[0015] According to some embodiments of this disclosure, the pretreatment equipment for dicing further includes a support and a turntable rotatably connected to the support. The laser dotting part and the pressure head dotting part are both disposed on the turntable. The turntable is used to rotate the laser dotting part or the pressure head dotting part to a working position to perform dotting action.

[0016] According to some embodiments of this disclosure, the turntable is provided with at least one lens, and the turntable is also used to rotate the lens to the working position.

[0017] According to some embodiments of this disclosure, the lens is an optical microscope lens and there are multiple lenses with different magnifications. The multiple lenses include a first lens group and a second lens group. The magnification of each lens in the second lens group is greater than that of each lens in the first lens group. The laser dotting part is integrated on at least one of the lenses in the second lens group. The laser dotting part is used to emit laser light, and the laser light does laser dotting along the laser light path of the optical microscope lens.

[0018] According to some embodiments of this disclosure, the pressure head of the pressure head dotting part is pyramidal or prismatic.

[0019] According to some embodiments of this disclosure, the pretreatment equipment for dicing further includes a control device connected to the laser dotting section, which is used to control the shape and energy of the light emitted by the laser dotting section.

[0020] According to some embodiments of this disclosure, the dotting device is located above the bearing portion, and the position adjustment device further includes a lifting mechanism for driving the bearing portion to perform lifting and lowering actions, so that the bearing portion moves closer to or further away from the dotting device.

[0021] According to some embodiments of this disclosure, the position adjustment device further includes:

[0022] A rotating mechanism for driving the bearing part to rotate;

[0023] A translation mechanism is provided to drive the support part to translate along a preset direction.

[0024] According to some embodiments of this disclosure, the carrier portion is provided with a positioning structure for positioning the semiconductor structure.

[0025] According to some embodiments of this disclosure, the positioning structure includes a plurality of positioning suction cups.

[0026] A second aspect of this disclosure provides a plate-breaking method, the plate-breaking method comprising:

[0027] A guide mark is formed on the semiconductor structure, and the target point of the semiconductor structure is located on the guide path formed by the guide mark;

[0028] A dicing blade is applied to the target point to cause the semiconductor structure to cleave along the guide mark.

[0029] According to some embodiments of this disclosure, the guide mark includes a plurality of dot marks, the plurality of dot marks including a first dot mark group and a second dot mark group, wherein the dot marks in the first dot mark group are formed by laser dotting, and the dot marks in the second dot mark group are formed by pressure head dotting;

[0030] A first dot mark group and a second dot mark group are provided on both sides of the target point, and on each side of the target point, the first dot mark group is located between the target point and the second dot mark group.

[0031] According to some embodiments of this disclosure, the size of the target point is less than 1 μm; and / or,

[0032] The semiconductor structure is a wafer, and the target point is located in the edge region of the wafer.

[0033] According to some embodiments of this disclosure, the surface of the semiconductor structure is provided with a photoresist layer or a low dielectric constant material layer.

[0034] The pre-processing apparatus for dicing provided in this embodiment can form guide marks on the semiconductor structure before dicing, so that the semiconductor structure is guided to dice along the guide marks during subsequent dicing. Because the guide marks assist in dicing, the semiconductor structure can be accurately diced at the desired location, ensuring the perpendicularity of the resulting semiconductor structure cross-section, and enabling precise dicing of small-sized target points. Furthermore, because the guide marks are pre-set, the subsequent dicing blade does not require a large force to dice the semiconductor structure, thereby avoiding chipping caused by collision between the dicing blade and the semiconductor structure.

[0035] After reading and understanding the accompanying diagrams and detailed descriptions, other aspects can be understood. Attached Figure Description

[0036] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of these embodiments. In these drawings, similar reference numerals are used to denote similar elements. The drawings described below are some embodiments of the present disclosure, but not all embodiments. Other drawings will be readily available to those skilled in the art based on these drawings without inventive effort.

[0037] Figure 1This is a schematic diagram of the structure of a dicing device in related technologies;

[0038] Figure 2 This is a perspective structural diagram of a pretreatment apparatus for dicing according to an exemplary embodiment;

[0039] Figure 3 This is a front view of a pre-processing apparatus for dicing, according to an exemplary embodiment.

[0040] Figure 4 yes Figure 3 Enlarged view of point A in the middle;

[0041] Figure 5 yes Figure 3 Enlarged view of point B in the middle;

[0042] Figure 6 This is a structural diagram of the pressure head dotting section of a pretreatment device for dicing, according to an exemplary embodiment;

[0043] Figure 7 This is a perspective structural view of the support portion of a pretreatment apparatus for dicing, according to an exemplary embodiment;

[0044] Figure 8 This is a structural diagram illustrating a guide trace formed on a semiconductor structure according to an exemplary embodiment;

[0045] Figure 9 This is a flowchart illustrating a dicing method according to an exemplary embodiment.

[0046] Figure label:

[0047] This application:

[0048] 1. Support unit; 2. Guide mark forming unit; 201. Dotting device; 2011. Laser dotting unit; 2012. Pressure head dotting unit; 202. Position adjustment device; 2021. Lifting mechanism; 2021a. Lifting part; 2021b. Support part; 2022. Rotation mechanism; 2023. Translation mechanism; 2023a. Mounting part; 2023b. Drive part; 2023c. Guide part; 3. Chip; 4. Guide mark; 401. First dot mark group; 402. Second dot mark group; 5. Target point; 6. Dot mark; 7. Support; 8. Turntable; 9. Lens; 10. Pressure head; 11. Control device; 12. Laser generator; 13. Laser host; 14. Positioning structure; 1401. Positioning suction cup; 1402. Mounting part; 15. Mounting hole; 16. Eyepiece.

[0049] Related technologies:

[0050] 17. Splitting machine; 1701. Splitting blade; 1702. Feeding mechanism; 18. Lens assembly; 3'. Chip; 19. Limiting mechanism. Detailed Implementation

[0051] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.

[0052] In chip manufacturing, structural analysis is typically required. Cross-sectional analysis, as a commonly used structural analysis method, is widely employed. Traditional cross-sectional analysis methods include methods that directly cut the target points of the chip using a dicing machine. Related technologies include... Figure 1 As shown, the dicing equipment used in this method includes a limiting mechanism 19, a dicing machine 17, and a lens assembly 18. The limiting mechanism 19 is used to limit the chip 3' to be analyzed. The lens assembly 18 can observe the dicing process. The dicing machine 17 includes a dicing blade 1701 and a pushing mechanism 1702. The sharp end of the dicing blade 1701 is set directly towards the target point (not shown) of the chip 3' set on the limiting mechanism 19. The pushing mechanism 1702 drives the dicing blade 1701 to advance towards the chip 3' so that the dicing blade 1701 acts on the target point, thereby dicing the chip 3'. In this method, chip 3' cut by the dicing blade 1701 is prone to chipping around the cross section. In addition, due to the influence of processing accuracy, the size of the dicing blade 1701 cannot be made very small. For target points smaller than 5μm, the dicing blade 1701 cannot accurately align with the target point and cannot accurately dice the chip 3'.

[0053] In related technologies, methods to improve traditional cross-sectional analysis include focused ion lithography (FIB), which accelerates an ion beam generated by an ion source using an ion gun and focuses it onto the surface of a chip. By removing part of the chip material at the target point, the chip is cut. Although this method can achieve precise cutting of target points smaller than 5μm, when there are materials with low hardness on the chip surface, such as materials with low dielectric constants or photoresists, the chip around the cross-section is easily deformed during ion beam bombardment. The deformed chip cannot be used for subsequent wafer fabrication and analysis. As chip size shrinks, a single chip usually only has one wafer fabrication opportunity. Therefore, the wafer fabrication success rate of the chip dicing method using focused ion lithography is low.

[0054] Based on this, this disclosure provides a pre-processing apparatus and a dicing method for semiconductor dicing. The pre-processing apparatus can form guide marks on the semiconductor structure before dicing, so as to guide the semiconductor structure to dice along the guide marks during subsequent dicing. Due to the guidance marks assisting dicing, the semiconductor structure can be accurately diced at the desired position, ensuring the perpendicularity of the cross-section of the obtained semiconductor structure, and enabling precise dicing of small-sized target points. In addition, since the guide marks are pre-set, the subsequent dicing blade does not require a large force to dice the semiconductor structure, thereby avoiding chipping caused by collision between the dicing blade and the semiconductor structure.

[0055] This disclosure provides an exemplary embodiment of a pretreatment apparatus for dicing, with reference to... Figure 2 The dicing pretreatment apparatus includes a carrier section 1 and a guide mark forming section 2. The carrier section 1 is used to carry the semiconductor structure to be processed, such as a chip 3. The structure of the dicing pretreatment apparatus will be mainly described below using the dicing of a chip 3 as an example. Of course, it is understood that the dicing pretreatment apparatus provided in this embodiment can also be used for pretreatment of other semiconductor structures before dicing, and this embodiment does not limit this. Reference Figure 8 The guide mark forming part 2 is used to form a guide mark 4 on the surface of the chip 3. The guide mark 4 is used to guide the chip 3 to crack along the guide mark 4 during chip cleaving.

[0056] Before the guide mark 4 is formed on the surface of the chip 3, the chip 3 can be placed above the support part 1 to achieve the support and fixation function of the support part 1 on the chip 3. The level of the chip 3 can be adjusted by adjusting the support part 1 to ensure that the chip 3 will not be affected by the surface tilt of the chip 3. At the same time, it can avoid the deviation of the formed guide mark 4 from the preset shape. After the chip 3 is fixed, the guide mark 4 can be formed on the surface of the chip 3 by the guide mark forming part 2. In the subsequent chipping process, the chipping blade of the chipping device can be used to align with the target point 5 and apply force. In this embodiment, guide marks 4 can be formed on the semiconductor structure before dicing, so that the semiconductor structure is guided to dice along the guide marks during subsequent dicing. With the assistance of guide marks 4, the semiconductor structure can be diced accurately at the desired position, ensuring the perpendicularity of the cross-section of the obtained semiconductor structure. The perpendicularity can be, for example, the perpendicularity between the cross-section and the surface of the chip. It can also achieve precise dicing of small target points 5, for example, smaller than 1 μm, and can also achieve precise dicing under the action of the dicing blade. In addition, since the guide marks 4 are set in advance, the subsequent dicing blade does not need to exert much force to dice the semiconductor structure, thereby avoiding the collision between the dicing blade and the semiconductor structure that causes chipping.

[0057] In some embodiments, reference continues to be made to Figure 2 and combined Figure 8 The guide mark forming part 2 includes a dotting device 201 and a position adjustment device 202. The dotting device 201 is used to dot the chip 3 to form dot marks 6 on the chip 3. The position adjustment device 202 is used to adjust the relative position of the support part 1 and the dotting device 201 so that the dotting device 201 forms multiple dot marks 6 at different positions of the chip 3. The multiple dot marks 6 constitute the guide mark 4.

[0058] In practical applications, before placing the chip 3 to be processed on the carrier 1, the height of the carrier 1 can be adjusted by the position adjustment device 202 to move the carrier 1 away from the dotting device 201, ensuring sufficient space between the surface of the carrier 1 and the bottom of the dotting device 201 for placing the chip 3. After placing the chip 3 on the carrier 1, the position of the carrier 1 can be adjusted by the position adjustment device 202 to bring the carrier 1 closer to the dotting device 201 so that the dotting device 201 can perform dotting operations on the surface of the chip 3. The position adjustment device 202 can also adjust the horizontal position of the carrier 1, for example. After the dotting device 201 completes a single dotting operation on the chip 3, the carrier 1 can be moved horizontally by the position adjustment device 202 so that the next dotting position of the chip 3 is directly opposite the dotting device 201. In this embodiment, the size of the dot mark 6 can be set to be small, so that the chip 3 will not break during the process of forming the dot mark 6 at different positions of the chip 3; the setting of the position adjustment device 202 realizes the automation of dotting of the chip 3, effectively improves the dotting efficiency on the surface of the chip 3, and at the same time avoids the chip 3 from colliding with the dotting device 201 during placement, thereby avoiding the problem of chip 3 being damaged.

[0059] It is understandable that the height of the dotting device 201 can also be adjusted by the position adjustment device 202 to move the dotting device 201 away from the support part 1. After a reserved space for placing the chip 3 is formed between the surface of the support part 1 and the bottom of the dotting device 201, the chip 3 can be placed on the support part 1. Then the position of the dotting device 201 can be adjusted by the position adjustment device 202 to move the dotting device 201 closer to the chip 3 so that the dotting device 201 can press the chip 3 and perform subsequent dotting operations on the chip 3.

[0060] In some embodiments, such as Figure 4 As shown, the dotting device 201 includes a laser dotting section 2011 and a pressure head dotting section 2012. The laser dotting section 2011 is used to perform laser dotting on the chip 3 to form... Figure 8 The dot mark 6 shown is formed on the surface of the chip 3 by the pressure head dotting part 2012 through pressing with the chip 3.

[0061] During the formation of the guide mark 4, the laser dotting itself has the characteristics of high dotting accuracy and high speed. Therefore, the positional accuracy of the dot mark 6 formed on the surface of the chip 3 by the laser dotting part 2011 is relatively high, which can ensure the accuracy of the cleaving position during the cleaving process. If the depth of the dot mark 6 is insufficient during the formation of a certain dot mark 6, the laser dotting part 2011 can do multiple dots. The dot mark 6 formed by the pressure head dotting part 2012 can have a large hole depth. In the subsequent cleaving process, this part of the dot mark 6 is easier to guide the force and easier to crack to form a cross section for chip analysis. Therefore, the force applied to the target point 5 can be controlled to be smaller, avoiding excessive force that could cause chipping at the target point 5. In this embodiment, the cooperation between the laser dotting part 2011 and the pressure head dotting part 2012 not only improves the positional accuracy of the cross-section formed by the cleavage, but also reduces the force applied to the target point required to form the cross-section, thereby avoiding damage to the chip 3. In addition, during the process of forming the dot marks 6 by laser dotting and pressure head 10 dotting, the chip 3 has a small force-bearing area, so the chip 3 itself will not produce chipping marks, and the surface of the chip 3 will not be deformed. Thus, it can be ensured that the chip 3 formed by the cleavage pretreatment equipment in this disclosure can have a high cleavage success rate.

[0062] In other embodiments, the pressure head dotting part 2012 can form streaks (not shown) on the surface of the chip 3. During the formation of the guide mark 4, the laser dotting part 2011 can form dot marks 6 on the surface of the chip 3. Then, the position adjustment device 202 can adjust the support part 1 so that the pressure head dotting part 2012 contacts the chip 3 on the support part 1 and the pressure head dotting part 2012 presses the surface of the chip 3. After that, the position adjustment device 202 can translate the support part 1 so that the pressure head dotting part 2012 forms streaks on the surface of the chip 3. The streaks can be formed along a preset path. The streaks and dot marks 6 together form the guide mark 4. The depth of the streaks formed by the pressure head dotting part 2012 should be less than the depth of the dot marks 6 formed by the pressure head dotting part 2012 in the previous embodiment to avoid chipping of the chip 3 during the formation of the streaks.

[0063] In this embodiment, the pressure head dotting section 2012 can form streaks in a shorter time, which can effectively shorten the working time of the pressure head dotting section 2012, improve the formation efficiency of the guide mark 4, and thus improve the overall working efficiency of the chip pretreatment process.

[0064] like Figure 8As shown, the guide mark 4 may include multiple dot marks 6, and the target point 5 may be located between two of the dot marks 6. In some embodiments, the multiple dot marks 6 include a first dot mark group 401 and a second dot mark group 402. The dot marks 6 in the first dot mark group 401 are formed by laser dotting, and the dot marks 6 in the second dot mark group 402 are formed by dotting with the pressure head 10. A first dot mark group 401 and a second dot mark group 402 are provided on both sides of the target point 5, and on each side of the target point 5, the first dot mark group 401 is located between the target point 5 and the second dot mark group 402. The depth of all the dot marks 6 can be less than the thickness of the chip 3. The depth of the dot marks 6 can be specifically set according to the thickness of the chip 3 to ensure that the guide mark 4 can prevent the cross-section from chipping during the chipping process.

[0065] In this embodiment, a first dot mark group 401 with high positioning accuracy is set on both sides of the target point 5, and a second guide mark group 402 with greater depth is set on both sides of the first guide mark 4. When the chip 3 is cleaved by the cleaving preprocessing equipment, force can be precisely applied to the target point 5 located on the guide path to cleave the chip 3. Since most of the external force on the chip 3 will be transmitted along the guide path, no chipping will occur around the guide mark 4 under the influence of external force. Therefore, the chip 3 can have a high cleaving success rate.

[0066] For example, when the surface of chip 3 is provided with a low dielectric constant material layer (not shown) or a photoresist layer (not shown) or other easily deformable material layers, the guide marks 4 formed by multiple dot marks 6 can guide chip 3 to be cleaved along the guide path formed by the guide marks 4 during subsequent cleaving. In the above process, since it is not necessary to use focused ion lithography to form a high-precision cross section on the chip surface, the cleaving pretreatment equipment provided in this disclosure will not cause deformation of the material layer on the surface of chip 3 during cleaving, thereby ensuring the regularity of the cross section of chip 3 after cleaving and further ensuring that chip 3 can have a high cleaving success rate.

[0067] In other embodiments, the dot marks 6 of the first dot mark group 401 and the dot marks 6 of the second dot mark group 402 can be arranged sequentially at intervals. For example, one dot mark 6 of the first dot mark group 401 can be arranged between two dot marks 6 of the second dot mark group 402, two dot marks 6 of the first dot mark group 401 can be arranged on both sides of the target point 5, or two dot marks 6 of the second dot mark group 402 can be arranged on both sides of the target point 5, or one dot mark 6 of the first dot mark group 401 and one dot mark 6 of the second dot mark group 402 can be arranged on both sides of the target point 5 respectively.

[0068] In this embodiment, a first dot group 401 can be formed on the surface of the chip 3 using a laser dotting part 2011. There is a gap between adjacent dots 6 in the first dot group 401. After the first dot group 401 is formed, a pressure head dotting part 2012 can be used to form dots 6 of a second dot group 402 in the gap. The dots 6 of the first dot group 401 and the dots 6 of the adjacent second dot group 402 form a force-bearing unit. In this way, multiple force-bearing units in the guide mark 4 can have the same mechanical properties. This ensures that after the target point 5 is subjected to force, the force transmitted to each receiving unit is basically equal, so as to ensure that in the subsequent chip 3 cleaving process, the cross-section will not have a chipping problem due to uneven force.

[0069] For example, all the dot marks 6 constituting the guide mark 4 can extend radially along the chip 3, the target point 5 can be located at the center of the chip 3, and the distance between two adjacent dot marks 6 is less than the length of the dot mark 6 in the extension direction of the guide mark 4. With this setting, the actual length of the chip 3 in the extension direction of the guide mark 4 without dot marks 6 can be shortened, and the chip 3 can be reduced as much as possible during the subsequent dicing process.

[0070] For example, the size of the dot marks in the first dot mark group 401 formed by the laser dotting part 2011 can be smaller than the size of the dot marks 6 in the second dot mark group 402 formed by the pressure head dotting part 2012. The size of all the dot marks 6 is on the micrometer scale. The depth of the dot marks 6 in the first dot mark group 401 can be 0.1 to 1 μm, and the depth of the dot marks 6 in the second dot mark group 401 can be 1 to 10 μm. In this way, precise fragmentation analysis of target points 5 with a size of less than 1 μm can be achieved.

[0071] In some embodiments, such as Figure 3 As shown, the pretreatment equipment for dicing also includes a support 7 and a turntable 8 rotatably connected to the support 7. The laser dotting part 2011 and the pressure head dotting part 2012 are both disposed on the turntable 8. The turntable 8 is used to rotate the laser dotting part 2011 or the pressure head dotting part 2012 to the working position to perform dotting action. When in the working position, the laser dotting part 2011 and the pressure head dotting part 2012 can be perpendicular to the support part 1.

[0072] In this embodiment, the turntable 8 is fixed by the bracket 7, and the laser dotting part 2011 and the pressure head dotting part 2012, which are rotated to the working position, are further fixed by the turntable 8. This arrangement can avoid the problem of the dot mark 6 deviating from the preset path caused by the shaking of the laser dotting part 2011 or the pressure head dotting part 2012 during the dotting process. In addition, the turntable 8 has a simple structure, and the turntable 8 can quickly realize the switching operation of laser dotting or pressure head dotting on the chip 3, thus effectively improving the overall preprocessing efficiency of the chip 3.

[0073] In some embodiments, continue to refer to Figure 3 At least one lens 9 is provided on the turntable 8, and the turntable 8 is also used to rotate the lens 9 to the working position.

[0074] In this embodiment, after placing the chip 3 on the carrier 1, the lens 9 can be adjusted to the working position via the turntable 8. The operator can observe whether the target marking position is in the ideal position through the lens 9. When the target marking position is in the ideal position, the laser marking part 2011 or the pressure head marking part 2012 can be rotated to the working position and subsequent marking work can be carried out. It is understood that the operator can adjust the lens 9 to the working position at any time so as to stop the loss in time if there is a deviation in the marking process. At the same time, after the guide mark 4 is formed, the operator can also observe whether the guide mark 4 meets the requirements and whether the chip 3 with the guide mark 4 can be subjected to subsequent cleaving processing. When the target marking position is not in the ideal position, the target marking position on the chip 3 can be adjusted to the ideal position through the position adjustment device 202. During the above process, the operator needs to continuously observe the chip 3 with the lens 9 until the target point 5 is found and the target point is moved to the ideal position.

[0075] Since the size of the target point 5 in this disclosure is on the micrometer scale, and the lens 9 can be an optical microscope lens, the size of the target point 5 varies depending on the different fragmentation requirements, and this difference may be tens of times. In some embodiments, such as... Figure 3 As shown, multiple lenses 9 can be configured, each with a different magnification. These multiple lenses 9 include a first lens group and a second lens group. The magnification of each lens 9 in the second lens group is greater than that of each lens 9 in the first lens group. (Refer to...) Figure 4 The laser dotting unit 2011 is integrated on at least one lens 9 in the second lens group. The laser dotting unit 2011 is used to emit laser light, and the laser light does laser dotting along the laser light path in the optical microscope lens.

[0076] In this embodiment, the optical microscope lens can be used to observe the target point 5 in this disclosure. In addition, since the size of the dot mark 6 in the first dot mark group 401 formed by laser dotting is extremely small, the laser dotting part 2011 is integrated into the lens 9 in the second lens group with a high magnification, which can effectively observe the dot mark 6 of the first dot mark group 401. After the target dotting position is adjusted to the ideal position, the laser dotting part 2011 can directly dot the chip 3, thereby saving the time required to adjust the laser dotting part 2011 to the working position. At the same time, it can also avoid the problem of target point 5 shifting due to vibration or other factors when adjusting the laser dotting part 2011, thereby ensuring the positional accuracy of the dot mark 6 in the first dot mark group 401 formed by the laser dotting part 2011. On the other hand, it can also improve the overall structural compactness of the dicing processing device provided in this disclosure, so that the laser dotting part 2011 will not occupy the limited working space on the turntable 8. The number of lenses 9 and the magnification can be set according to the size of commonly used target points 5. In this way, the needs of acquiring images and position information of target points 5 of various sizes can be met. Since the size of the dot marks 6 is small, the lens 9 with a high magnification can accurately locate the next dot mark 6 to be formed, so that all the dot marks 6 can be formed according to the preset path, so as to ensure the accurate dicing of the subsequent chip 3.

[0077] For example, the first lens group may include a first lens, a second lens, and a third lens with lower magnification, which can be used to observe the dot marks 6 in the second dot mark group; the second lens group may include a fourth lens, a fifth lens, and a sixth lens with higher magnification, which can increase sequentially, wherein the laser dotting part 2011 can be integrated into one or more of the fourth lens, the fifth lens, and the sixth lens.

[0078] In some embodiments, continue to refer to Figure 3 and combined Figure 4 The bracket 7 is also equipped with an eyepiece 16 and a lens 9 for magnifying and acquiring image information of the chip 3 to be processed. The eyepiece 16 is used to further magnify the above image information, so as to form a clear virtual image at the distance of clear vision and transmit it to the human eye.

[0079] In some embodiments, such as Figure 6 As shown, the pressure head 10 of the pressure head dotting section 2012 is pyramidal or prismatic. When the pressure head dotting section 2012 is in the working position, the sharp end of the pressure head dotting section 2012 is positioned directly opposite the chip 3 to be processed.

[0080] In this embodiment, the dotting part 2012 of the pressure head, which is designed in the shape of a pyramid or prism, can press into the surface of the chip 3 with a small contact area to avoid chipping of the chip 3 during the formation of the second dot mark group 402. On the other hand, the dot marks 6 formed by the pressure head 10, which is designed in a regular shape, also have a relatively regular shape. The dot marks 6 with a regular shape can provide good guidance for the dicing knife in the subsequent process. For example, the pressure head 10 is detachably provided at the end of the dotting part 2012 of the pressure head to facilitate timely maintenance and replacement.

[0081] For example, when the pressure head 10 of the pressure head dotting part 2012 is in the shape of a triangular pyramid, the opening of the formed dot mark 6 is triangular, and one end of the opening can be located in the extension direction of the guide mark 4. When the pressure head 10 of the pressure head dotting part 2012 is in the shape of a triangular pyramid, the opening of the formed dot mark 6 is quadrilateral, and two opposite ends of the opening can be located in the extension direction of the guide mark 4. With this setting, the force transmitted from the target point 5 to the dot mark 6 during the subsequent cleaving process can be reduced so that it can directly act on the side of the dot mark 6 where the end point is located. This ensures that the cross section can extend along the side of each dot mark 6 during the subsequent cleaving process, that is, it can ensure that the cross section can extend along the preset path formed by the guide mark 4, thereby further ensuring that no chipping occurs in the area where the cross section is located during the formation of the cross section.

[0082] When the pressure head 10 of the pressure head dotting part 2012 is in the shape of a triangular pyramid, the side dimension of the bottom surface of the pressure head 10 can be 1 to 5 μm, and the depth of the pressure head 10 pressed into the chip 3 can be 5 to 10 μm; when the pressure head 10 of the pressure head dotting part 2012 is in the shape of a triangular prism, the side dimension of the pressure head 10 can be 1 to 5 μm, and the depth of the pressure head 10 pressed into the chip 3 can be 5 to 10 μm.

[0083] According to an exemplary embodiment, reference Figure 2 and Figure 3 The pretreatment equipment for dicing also includes a control device 11, which is connected to the laser dotting unit 2011 and is used to control the shape and energy of the light emitted by the laser dotting unit 2011.

[0084] In this embodiment, the shape of the light emitted by the laser dotting part 2011 is controlled by the control device 11, thereby controlling the shape and size of the dot marks 6 in the second dot mark group 402. The depth of the dot marks 6 in the second dot mark group 402 is controlled by controlling the energy of the light emitted by the laser dotting part 2011. In this way, specific laser beams can be set for target points 5 of different sizes and specifications so that the cross-sectional width of the subsequent cleavage can match the target point 5.

[0085] For example, the shape of the laser beam can be, for example, a rhombus, a rectangle, a triangle, etc. This embodiment does not limit this. The side length of the opening of the dot mark 6 formed by the laser dotting part 2011 can be 0.3 to 5 μm.

[0086] For example, the control device 11 can also be used to control the rotation of the turntable 8 and the position adjustment device 202. For example, the control device 11 can control the start and stop of the rotation mechanism 2022 and the rotation angle, and can also control the displacement distance of the translation mechanism 2023 or the displacement distance of the lifting mechanism 2021.

[0087] According to an exemplary embodiment, such as Figure 2 and Figure 3 As shown, the pretreatment equipment for dicing also includes a laser generator 12 and a laser host 13. The laser generator 12 is used to provide laser energy, which can be in continuous (CW) mode or pulse mode. The laser host 13 can be used to adjust the laser energy output by the laser dotting section 2011 and the shape of the laser beam.

[0088] In some embodiments, reference Figure 2 The dotting device 201 is located above the support part 1. The position adjustment device 202 also includes a lifting mechanism 2021, which is used to drive the support part 1 to perform lifting and lowering actions so that the support part 1 moves closer to or further away from the dotting device 201.

[0089] In this embodiment, before placing the chip 3 to be processed on the carrier 1, the lifting mechanism 2021 of the position adjustment device 202 can be used to control the carrier 1 to move downward, so that the carrier 1 is away from the dotting device 201, to ensure that there is sufficient reserved space between the surface of the carrier 1 and the bottom of the dotting device 201 for placing the chip 3. After placing the chip 3 on the carrier 1, the lifting mechanism 2021 can be used to adjust the carrier 1 and move the carrier 1 closer to the dotting device 201. Furthermore, the lifting mechanism 2021 can be used to lift the carrier 1 to complete the rapid dotting work on the surface of the chip 3, which can effectively improve the formation efficiency of the guide mark 4. It can be understood that the lifting mechanism 2021 can also be used to adjust the position of the dotting device 201 and move the dotting device 201 closer to or away from the carrier 1 to complete the placement of the chip 3 and the dotting work on the surface of the chip 3.

[0090] For example, such as Figure 5As shown, the lifting mechanism 2021 may include a lifting part 2021a and a support part 2021b. The lifting part 2021a is used to drive the lifting of the bearing part 1, and the support part 2021b can support and guide the bearing part 1. The lifting part 2021a may be, for example, a linear stepper motor or a linear cylinder, and the support part 2021b may be, for example, a combination structure of a guide column and a guide sleeve.

[0091] In some embodiments, continue to refer to Figure 2 The position adjustment device 202 also includes a rotation mechanism 2022 and a translation mechanism 2023. The rotation mechanism 2022 is used to drive the bearing part 1 to rotate, and the translation mechanism 2023 is used to drive the bearing part 1 to translate along a preset direction.

[0092] In this embodiment, the target marking position can be moved to the ideal position by the cooperation of the rotation mechanism 2022 and the translation mechanism 2023. In addition, after the pressure head marking part 2012 completes a single marking of the chip 3, the carrier part 1 can be translated by the translation mechanism 2023 so that the next marking position of the chip 3 is directly facing the pressure head 10 of the pressure head marking part 2012. In cooperation with the lifting mechanism 2021, multiple marking marks 6 can be quickly marked to further improve the formation efficiency of the guide mark 4.

[0093] In other embodiments, multiple laser dotting parts 2011 and multiple pressure head dotting parts 2012 may be provided respectively. Multiple laser dotting parts 2011 may be arranged side by side along a preset path, and multiple pressure head dotting parts 2011 may be arranged side by side along a preset path.

[0094] In this embodiment, after the target point 5 is moved to the ideal position with the help of the lens 9, the laser dotting part 2011 or the pressure head dotting part 2012 can be rotated to the target position by the turntable 8, so as to simultaneously form multiple dot marks 6 on the chip 3. When forming the dot marks 6 of the second dot mark group 402, the dotting work on the surface of the chip 3 can be achieved by the lifting mechanism 2021. In this way, the time required for chip 3 preprocessing can be further saved, thereby improving the efficiency of the preprocessing process.

[0095] In some embodiments, such as Figure 2 As shown, the translation mechanism 2023 may include a mounting part 2023a, a driving part 2023b, and a guide part 2023c. The mounting part 2023a may be located at the bottom of the lifting mechanism 2021 for mounting and supporting the lifting mechanism 2021. The guide part 2023c may be located below the mounting part 2023a for guiding the mounting part 2023a. The driving part 2023b may be located on one side of the mounting part 2023a and connected to the mounting part 2023a for driving the mounting part 2023a to translate.

[0096] For example, the drive unit 2023b may be a stepper slide or a ball screw, and the guide unit 2023c may be a linear guide rail. This embodiment does not limit this.

[0097] In some embodiments, the carrier 1 is provided with a positioning structure 14 for positioning the chip 3.

[0098] In this embodiment, the chip 3 is positioned by the positioning structure 14, which can prevent the chip 3 from shifting its position after being subjected to force during the chip 3 cracking process or the formation of the guide mark 4, thereby further avoiding the problem of the formed guide mark 4 or cross section being skewed, and thus ensuring the success rate of chip 3 cracking.

[0099] In some embodiments, reference Figure 7 The positioning structure 14 includes multiple positioning suction cups 1401. The positioning structure 14 may also include a mounting member 1402. The positioning structure 14 is mounted on the support part 1 through the mounting member 1402.

[0100] In this embodiment, the positioning suction cup 1401 can effectively adsorb the chip 3 and play a good positioning role for the chip 3 during the formation of the guide mark 4 and the chip splitting process. The positioning suction cup 1401 can be a circular disc-shaped structure with a concave center, and the material of the positioning suction cup 1401 can be nitrile rubber.

[0101] To enable the pre-processing equipment for chip dicing to position chips 3 of different specifications, in some embodiments, the position of the positioning suction cup 1401 on the support part 1 is adjustable. In practical applications, the position of each positioning suction cup 1401 can be adjusted to achieve fixed-point support for the suction cup of the corresponding specification. In this way, the pre-processing equipment for chip dicing provided by this disclosure can be used to achieve good positioning of chips 3 of various specifications and perform subsequent pre-processing steps, thereby improving the adaptability of the pre-processing equipment provided by this disclosure.

[0102] For example, continue to refer to Figure 7 At least one set of mounting holes can be provided on the carrier part 1. Each set of mounting holes includes at least two mounting holes 15. The mounting holes 15 in the same set can extend radially along the carrier part 1. The mounting part 1402 of the positioning structure 14 can be installed into the corresponding mounting hole 15 according to the specifications of the chip 3 to be processed.

[0103] In other embodiments, the dicing blade can be mounted on the turntable 8. After the preprocessing of the chip 3 is completed, the dicing blade can be rotated to the working position by rotating the turntable 8, and then the dicing blade can directly dic the chip 3.

[0104] After the guide mark 4 is formed on the surface of the chip 3, the target point 5 can be adjusted to the target marking position using the lens 9 and the position adjustment device 202. Then, the dicing blade is rotated to the working position using the turntable 8. Subsequently, the lifting mechanism 2021 can be used to bring the carrier part 1 closer to the dicing blade so that the dicing blade applies force to the target point 5, thereby realizing the chip dicing operation. In this embodiment, the dicing blade in the working position can be aligned with the target point 5 with high precision. The cross-section formed in this way will not deviate from the target point 5, thus ensuring the accuracy of the cross-section position.

[0105] This disclosure also provides a method for dicing fragments, such as... Figure 9 As shown, the dicing method includes the following steps:

[0106] Step S100: A guide mark is formed on the semiconductor structure, and the target point of the semiconductor structure is located on the guide path formed by the guide mark.

[0107] The semiconductor structure can be, for example, a chip 3, on which guide marks 4 can be formed using a pre-processing device for dicing as described above. In this step, the target point 5 can be located at the center of the chip 3, and the guide marks 4 can extend radially along the chip 3.

[0108] Because the guide mark 4 is used to form a guide path to assist in the dicing of the chip 3, even if the size of the target point 5 is less than 1μm, the target point 5 of the chip 3 can be diced accurately.

[0109] For example, the guiding path can be the center line connecting the various point marks 6 in the guiding mark 4.

[0110] In one embodiment, the plurality of dot marks 6 include a first dot mark group 401 close to the target point 5 and a second dot mark group 402 far from the target point 5. The dot marks 6 in the first dot mark group 401 can be formed by laser dotting by the laser dotting part 2011, and the dot marks 6 in the second dot mark group 402 can be formed by dotting by the pressure head 10 of the pressure head dotting part 2012. A first dot mark group 401 and a second dot mark group 402 are provided on both sides of the target point 5, and on each side of the target point 5, the first dot mark group 401 is located at the target point 5 and the second dot mark group 402. Between 02, that is, the target point 5 can be located between the two dots 6 of the two sets of first dot marks 401. In this way, during the process of applying force to the target point 5, the chip 3 can form an initial guide mark along the smaller and more precise first dot mark set 401. This initial guide mark can extend along the preset guide path to ensure that in the subsequent process, when the force is transmitted to the second dot mark set 402, the formed guide mark 4 can be formed along the guide path, thereby achieving precise chipping of the smaller target point 5, while ensuring the chipping success rate of the chip 3.

[0111] Step S200: Apply the dicing blade to the target point to cause the semiconductor structure to cleave along the guide line.

[0112] When force is applied to the target point 5, the force will spread outward from the target point 5 under the guidance of the guide mark 4. When the force is transmitted to the area where the guide mark 4 is located, the chip 3 will form a cross section with a preset shape along the guide mark 4. The width of the formed cross section is consistent with the width of the dot mark 6 of the guide mark 4, and the size of the dot mark 6 can be specifically set according to the specifications of the target point 5.

[0113] In this process, the target point 5 can be located in the edge region of the wafer. When the target point 5 is in the edge region, if the chip 3 is cleaved using a traditional cleaving method, the chip 3 is prone to chipping after the target point 5 is subjected to force, resulting in a very low cleaving success rate. However, when the chip 3 is cleaved using the cleaving method provided in this disclosure, most of the external force on the chip 3 will be transmitted along the guide path formed by the guide mark 4. Therefore, even if the target point 5 is located in the edge region of the chip 3, the area around the guide mark 4 will not experience chipping under the influence of external force, resulting in a very high cleaving success rate. Thus, the cleaving method provided in this disclosure can satisfy the cleaving analysis requirements of various locations on the chip 3.

[0114] For example, the edge region can be the outermost annular region C of chip 3, referring to... Figure 8 The radial width of the annular region C can be 1 / 6 to 1 / 4 of the wafer radius.

[0115] For example, the surface of chip 3 is provided with a photoresist layer (not shown) or a low dielectric constant material layer (not shown). The material of the low dielectric constant material layer can be, for example, silicon carbon nitride (SiCN) or silicon dioxide (SiO2). In this embodiment, it is equivalent to forming various dot marks 6 through point-to-surface contact, and then the dot marks 6 together constitute the guide mark 4. In the above process, since it is not necessary to use focused ion lithography to form a high-precision cross section on the chip surface, the photoresist layer or low dielectric constant material layer on the surface of chip 3 will not be deformed by stress. Therefore, the dicing method provided in this disclosure can be adapted to and applied to the dicing analysis of most semiconductor structures, and has a wide application prospect.

[0116] The dicing method provided in the exemplary embodiments of this disclosure can form guide marks 4 on the semiconductor structure before dicing it, so that the semiconductor structure is guided to dicing along the guide marks 4 during subsequent dicing. Because the guide marks 4 assist in dicing, the semiconductor structure can be diced accurately at the desired position, ensuring the perpendicularity of the cross-section of the obtained semiconductor structure. It can also achieve precise dicing of small-sized target points 5, such as those smaller than 1 μm, under the action of the dicing blade. In addition, since the guide marks 4 are set in advance, the dicing blade does not need to exert much force to dilate the semiconductor structure, thereby avoiding chipping caused by collision between the dicing blade and the semiconductor structure.

[0117] The various embodiments or implementation methods described in this specification are presented in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0118] In the description of this specification, references to the terms "embodiment," "exemplary embodiment," "some implementation," "illustrated implementation," "example," etc., refer to specific features, structures, materials, or characteristics described in connection with an implementation or example that are included in at least one implementation or example of this disclosure.

[0119] In this specification, the illustrative expressions of the terms used do not necessarily refer to the same implementation or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more implementations or examples.

[0120] In the description of this disclosure, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0121] It is understood that the terms "first," "second," etc., as used in this disclosure may be used to describe various structures, but these structures are not limited by these terms. These terms are only used to distinguish one structure from another.

[0122] In one or more accompanying drawings, the same elements are represented by similar reference numerals. For clarity, many parts in the drawings are not drawn to scale. Furthermore, certain well-known parts may not be shown. For simplicity, a structure obtained after several steps may be depicted in a single drawing. Many specific details of this disclosure, such as the structure, materials, dimensions, processing methods, and techniques of the devices, are described below to provide a clearer understanding of the disclosure. However, as those skilled in the art will understand, this disclosure may be implemented without adhering to these specific details.

[0123] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this disclosure, and are not intended to limit them. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this disclosure.

Claims

1. A pretreatment device for dicing, characterized in that, The pretreatment equipment for fragmentation includes: The support section is used to support the semiconductor structure to be processed; A guide mark forming portion is used to form a guide mark on the surface of the semiconductor structure, the guide mark being used to guide the semiconductor structure to cleave along the guide mark during wafer cleaving; the guide mark forming portion includes: A dotting device for dotting the semiconductor structure to form dot marks on the semiconductor structure; A position adjustment device is used to adjust the relative position of the carrier and the dotting device so that the dotting device forms a plurality of dots at different positions of the semiconductor structure, the plurality of dots constituting the guide marks, wherein the plurality of dots include a first dot mark group and a second dot mark group. The dotting device includes: a laser dotting section for laser dotting the semiconductor structure to form the dots in the first dot mark group; and a pressure head dotting section for forming the dots in the second dot mark group on the surface of the semiconductor structure by pressing against the semiconductor structure. The target point of the semiconductor structure is located on the guide path formed by the guide marks. A first mark group and a second mark group are provided on both sides of the target point. On each side of the target point, the first mark group is located between the target point and the second mark group. The size of the target point is less than 1 μm. First, the laser dotting part is used to form the first dot mark group on the surface of the semiconductor structure, and there is a gap between adjacent dots in the first dot mark group. Then, the pressure head dotting part is used to form the second dot mark group in the gap.

2. The pretreatment equipment for dicing according to claim 1, characterized in that, The depth of the laser-dotted marks formed on the semiconductor structure is 0.1–1 μm; The depth of the dot marks formed on the semiconductor structure by the dotting part of the pressure head is 1 to 10 μm.

3. The pretreatment equipment for dicing according to claim 1, characterized in that, The pretreatment equipment for dicing also includes a support and a turntable rotatably connected to the support. The laser dotting part and the pressure head dotting part are both disposed on the turntable. The turntable is used to rotate the laser dotting part or the pressure head dotting part to the working position to perform dotting action.

4. The pretreatment equipment for dicing according to claim 3, characterized in that, The turntable is equipped with at least one lens, and the turntable is also used to rotate the lens to the working position.

5. The pretreatment equipment for dicing according to claim 4, characterized in that, The lens is an optical microscope lens and there are multiple lenses with different magnifications. The multiple lenses include a first lens group and a second lens group. The magnification of each lens in the second lens group is greater than that of each lens in the first lens group. The laser dotting part is integrated on at least one of the lenses in the second lens group. The laser dotting part is used to emit laser light, and the laser light does laser dotting along the laser light path of the optical microscope lens.

6. The pretreatment equipment for dicing according to claim 1, characterized in that, The pressure head of the pressure head marking part is pyramidal or prismatic.

7. The pretreatment equipment for dicing according to claim 1, characterized in that, The pretreatment equipment for dicing also includes a control device connected to the laser dotting section, which is used to control the shape and energy of the light emitted by the laser dotting section.

8. The pretreatment apparatus for dicing according to any one of claims 1 to 7, characterized in that, The dotting device is located above the bearing portion, and the position adjustment device includes a lifting mechanism. The lifting mechanism is used to drive the bearing portion to perform lifting and lowering actions so that the bearing portion moves closer to or further away from the dotting device.

9. The pretreatment equipment for dicing according to claim 8, characterized in that, The position adjustment device further includes: A rotating mechanism for driving the bearing part to rotate; A translation mechanism is provided to drive the support part to translate along a preset direction.

10. The pretreatment apparatus for dicing according to any one of claims 1 to 7, characterized in that, The support portion is provided with a positioning structure for positioning the semiconductor structure.

11. The pretreatment equipment for dicing according to claim 10, characterized in that, The positioning structure includes multiple positioning suction cups.

12. A method for dicing, characterized in that, The fragmentation method includes: Guide marks are formed on a semiconductor structure, wherein the target point of the semiconductor structure is located on the guide path formed by the guide marks; A dicing blade is applied to the target point to cause the semiconductor structure to cleave along the guide mark; The guide mark includes multiple dot marks, which include a first dot mark group and a second dot mark group. The dot marks in the first dot mark group are formed by laser dotting, and the dot marks in the second dot mark group are formed by pressure head dotting. A first dot mark group and a second dot mark group are provided on both sides of the target point. On each side of the target point, the first dot mark group is located between the target point and the second dot mark group. The size of the target point is less than 1 μm. First, the first dot mark group is formed on the surface of the semiconductor structure using a laser dotting part. There is a gap between adjacent dots in the first dot mark group. Then, the second dot mark group is formed in the gap using a pressure head dotting part.

13. The dicing method according to claim 12, characterized in that, The semiconductor structure is a wafer, and the target point is located in the edge region of the wafer.

14. The dicing method according to claim 12, characterized in that, The surface of the semiconductor structure is provided with a photoresist layer or a low dielectric constant material layer.

Images