Valve for changing flow conductance under vacuum

Abstract

Embodiments described herein relate to a valve for semiconductor processing. The valve includes a valve body having an inlet conduit and an outlet conduit separated by a diaphragm body. The diaphragm body includes a motor, a drive coupling coupled to the motor, a rotatable ring about a fixed plate and separated by a dynamic seal, and one or more flappers movably coupled to the fixed plate by respective pivotable fasteners, wherein the rotatable ring is coupled to the drive coupling, wherein the fixed plate includes an opening and the one or more flappers are movable relative to the opening.

Description

Technical Field

[0001] Embodiments of this disclosure generally relate to methods and apparatus for processing substrates. More specifically, embodiments described herein relate to valve devices that enable changes in flow conductance during substrate processing (i.e., in-situ processing). Background Technology

[0002] The electronics and semiconductor industries continue to strive for greater output while improving the uniformity of layers deposited on substrates with increasingly larger surface areas. These same factors, combined with new materials, also enable higher circuit integration per unit area on the substrate. With the increasing demand for higher circuit integration, the need for higher deposition rates and process control regarding layer characteristics is also increasing.

[0003] In some existing chemical vapor deposition (CVD) and / or atomic layer deposition (ALD) chambers, ampoules are used to deliver vaporized precursor material through valves and nozzles to the processing area for depositing one or more films on a substrate. Controlling the precursor flux is used to achieve a consistent deposition rate. Sometimes, the precursor flux is provided by varying the ampoule pressure and / or temperature. However, altering the ampoule pressure and / or temperature can lead to higher defect numbers and / or particle problems.

[0004] Therefore, there is a need for a method and apparatus for controlling the pressure of a precursor delivery system that does not have the aforementioned drawbacks. Summary of the Invention

[0005] The embodiments described herein relate to a valve for semiconductor processing. In one embodiment, the valve includes a valve body having an inlet conduit and an outlet conduit separated by a diaphragm body. The diaphragm body includes a motor, a transmission link coupled to the motor, a mounting plate coupled to a fixed body within the valve body, and one or more shutter plates movably coupled to the transmission link, wherein the mounting plate includes an opening and the one or more shutter plates are movable relative to the opening.

[0006] In another embodiment, a valve for a semiconductor processing chamber is disclosed. The valve includes a valve body having an inlet conduit and an outlet conduit separated by a diaphragm body. The diaphragm body includes: a motor; a drive coupling connected to the motor; a rotatable ring surrounding a fixed plate and separated by a dynamic seal, the rotatable ring being coupled to the drive coupling; and one or more gates movably coupled to the fixed plate by corresponding pivotable fasteners, wherein the fixed plate includes an opening and the one or more gates are movable relative to the opening.

[0007] In another embodiment, a valve for a semiconductor processing chamber is disclosed. The valve includes a valve body having an inlet conduit and an outlet conduit separated by a diaphragm body. The diaphragm body includes: a motor; a drive coupling connected to the motor; a rotatable ring surrounding a fixed plate and separated by a dynamic seal, the rotatable ring being coupled to the drive coupling; and one or more gates movably coupled to the fixed plate by corresponding pivotable fasteners, and the one or more gates being movably coupled to the rotatable ring by corresponding rods, wherein the fixed plate includes an opening and the one or more gates are movable relative to the opening. Attached Figure Description

[0008] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly outlined above, can be obtained by referring to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be considered as limiting the scope of this disclosure, allowing for other equivalent and effective embodiments.

[0009] Figure 1 This is a schematic cross-sectional view of an illustrative substrate processing chamber according to an embodiment of the present disclosure.

[0010] Figure 2 It is possible Figure 1 An isometric view of one embodiment of the valve device used in the substrate processing chamber shown.

[0011] Figure 3A yes Figure 2 A side sectional view of the valve assembly.

[0012] Figure 3B This is a front view of the internal components of the valve assembly.

[0013] Figure 3C This is a rear view of the internal components of the valve assembly.

[0014] Figure 4A and 4BThis is a schematic side view of the diaphragm body of a valve device showing different embodiments of the number of gates.

[0015] Figure 5A and 5B This is a schematic side view showing the diaphragm body of a single gate according to other embodiments of the valve device.

[0016] For ease of understanding, the same reference numerals are used where possible to denote common elements in the accompanying drawings. It is anticipated that elements and features of one embodiment can be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0017] The embodiments described herein relate to a valve device for controlling the flow of precursor gases in a substrate processing chamber. This valve device enables dynamic flow control during processing (i.e., in-situ processing). The valve device includes a flow orifice that can be adjusted during processing, thereby altering the flow conductance. The orifice size can be controlled using software by controlling the displacement of one or more gates relative to openings in the board. This valve device is constructed of materials resistant to degradation from the precursor gases and usable at high temperatures (e.g., about 150 degrees Celsius). This valve device can also operate under extreme negative pressures (e.g., 1 mTorr or lower).

[0018] Figure 1 This is a schematic cross-sectional view of an illustrative substrate processing chamber 100 according to embodiments of the present disclosure. The processing chamber 100 may be a schematic diagram of an atomic layer deposition (ALD) chamber, a chemical vapor deposition (CVD) chamber, or other deposition chamber. The embodiments disclosed herein can be used with chambers available from Applied Materials, Inc., Santa Clara, California, such as those from CENTURA. ® Or ENDURA ® Chambers sold in other forms. Additional substrate processing chambers from other manufacturers may benefit from the teachings provided herein.

[0019] The substrate processing chamber 100 includes a chamber body 106 and a chamber cover 170, the chamber cover 170 being disposed on the upper surface 110 of the chamber body 106 to define an internal space 134. A substrate support 112 supports a substrate 120 on a substrate support surface 114. The substrate support (or base) 112 is mounted to a lifting motor 128 to raise or lower the substrate support 112 and the substrate 120 disposed on the substrate support 112. A lifting plate 116, coupled to the lifting motor 118, is mounted in the processing chamber 100 and raises or lowers a pin 122 movably disposed through the substrate support 112. The pin 122 raises or lowers the substrate 120 above the surface of the substrate support 112. In some embodiments, the substrate support 112 includes a vacuum chuck, electrostatic chuck, or clamp for securing the substrate 120 to the substrate support 112. An opening 108 formed in the wall 104 of the chamber body 106 facilitates the entry and exit of the substrate into and out of the substrate processing chamber 100.

[0020] The substrate support 112 is heated to increase the temperature of the substrate 120 disposed on the substrate support 112. For example, the substrate support 112 can be heated using an embedded heating element (such as a resistance heater) or using radiant heat (such as a heating lamp disposed above the substrate support 112). A purification ring 124 is disposed on the substrate support 112 to define a purification channel 126 that provides purification gas to the peripheral portion of the substrate 120 to prevent deposition on the peripheral portion of the substrate 120.

[0021] The exhaust system 131 is connected to the pumping channel 132 to remove any unwanted gases from the substrate processing chamber 100. The exhaust system 131 also helps maintain the desired pressure or desired pressure range within the substrate processing chamber 100.

[0022] A gas delivery system 150 is coupled to a gas passage 180 formed in or coupled to a chamber cover 170 to selectively supply precursor gas, reactant gas, carrier gas, purge gas, or combinations thereof to a substrate processing chamber 100. The gas delivery system 150 includes a gas panel 151 having a plurality of gas sources 152, 155, 165, 167 and a plurality of valves (two shown) 157, 159 coupled to one or more conduits (e.g., conduits 156, 158) to control the airflow from the gas panel 151 to the substrate processing chamber 100. In some embodiments, the gas panel 151 is configured to combine at least some of the supplied gases, which then reach valve 157. For example, in some embodiments, valve 157 may be located downstream of a connector 163 connecting to gas sources 152, 155 to selectively supply gas to the substrate processing chamber 100 via conduit 156 or to deflect gas to an exhaust system 130 via conduit 161. In some embodiments, valves 157, 159 are switching valves, high-speed valves, stop valves, or the like to facilitate pulsed gas supplied by gas panel 151. In some embodiments, valves 157, 159 are two-way valves (e.g., diverter valves) configured to redirect the processing gas flow from the gas panel away from the substrate processing chamber 100 via, for example, conduits 161, 173.

[0023] In some embodiments, conduits 161 and 173 are connected to exhaust systems 130 and 171. Exhaust systems 130 and 171 may be the same exhaust system or they may be different exhaust systems. Additional gas sources 153 and 169 are connected via conduit 158 ​​to gas passage 180 to supply additional gas to gas passage 180. For example, in some embodiments, either or both of gas sources 153 and 169 may be precursor gas sources to provide a constant flow rate of precursor gas, such as titanium tetrachloride (TiCl4) or ammonia (NH3).

[0024] In some embodiments, such as when using solid or liquid precursors, the gas delivery system 150 may also include one or more ampoules. In such embodiments, one or more ampoules may be configured to contain the solid or liquid precursor and sublimate or evaporate it into a gaseous form for delivery into the substrate processing chamber 100.

[0025] In some embodiments, valves 157 and 159 are used to change the flow rate and / or volume of precursors supplied to processing chamber 100 from gas sources 152, 153, 155, 165, 167, and 169. In some embodiments, valves 157 and 159 are used to control the pressure of the precursor gases from gas sources 152, 153, 155, 165, 167, and 169, without controlling the pressure and / or temperature of gas sources 152, 153, 155, 165, 167, and 169. The pressure control provided by valves 157 and 159 can vary during processing (i.e., in-situ processing), such as when processing chamber 100 is under negative pressure during deposition processing.

[0026] A controller 140 (such as a programmed personal computer, workstation computer, or the like) is coupled to the substrate processing chamber 100. Schematic illustration shows that the controller 140 includes a central processing unit (CPU) 142, support circuitry 144, and a memory 146 containing associated control software 148. The controller 140 controls the operating conditions of processes performed in the processing chamber 100, such as ALD or CVD processes. The controller 140 controls the operation of valves 157, 159, and other parts of the gas delivery system 150. For example, the controller 140 may be configured to control the flow of various precursor and purge gases from the gas delivery system 150 to the substrate processing chamber 100 during different stages of the deposition cycle.

[0027] Figure 2 This is an isometric view of one embodiment of the valve device 200. The valve device 200 is used as... Figure 1 One or both of the valves 157 and 159 shown.

[0028] Valve assembly 200 includes a valve body 205 having an inlet conduit 210 and an outlet conduit 215. Each of the inlet conduit 210 and the outlet conduit 215 includes a sealing connection 220, such as that produced by the trademark VCR. ® Metal sealing connectors or fittings for sale. Valve assembly 200 also includes actuator housing 225, which includes a motor ( Figure 3A (as shown in the image).

[0029] Figures 3A-3C yes Figure 2 Various views of the valve device 200 shown. Figure 3A This is a side sectional view of valve device 200. Figure 3B and 3C This is a side view of the internal components of valve body 205. Figure 3B This is a front view of the internal components, and Figure 3C This is a rear view of the internal components.

[0030] Referring to Figure 3A, the valve device 200 includes a motor 300 rotatably coupled to a gear screw 305. The gear screw 305 is rotatably coupled to a linear drive screw 310, which is coupled to a transmission coupling 315. The linear drive screw 310 may be a leadscrew including threads (not shown), such as internal / external threads. In one embodiment, the motor 300 is a linear motion stepper motor including an encoder. However, the motor 300 and / or the linear drive screw 310 may be any actuator or actuation device capable of providing controlled motion to the transmission coupling 315.

[0031] The linear drive screw 310 includes an extension member 316 that extends or is disposed through an opening 318 in the plate 320 of the valve body 205. One end of the extension member 316 is connected to a drive coupling 315. The other end of the drive coupling 315 is connected to a diaphragm body 325.

[0032] The diaphragm body 325 includes a rotating body or a rotatable ring 330 movably coupled to the stationary body 332. The rotatable ring 330 is disposed radially outward of the stationary body 332. The stationary body 332 may at least partially receive a portion of the rotatable ring 330. A dynamic seal 334 is located at the interface between the rotatable ring 330 and the stationary body 332. The dynamic seal 334 is a rotary vacuum seal, such as a magnetohydrodynamic seal.

[0033] Reference Figure 3B The diaphragm body 325 includes a fixing plate 336 as part of a fixing body 332. The diaphragm body 325 also includes a plurality of gates 338 rotatably connected to the fixing plate 336 by pivotable fasteners 340. The diaphragm body 325 also includes a plurality of rods 342. Each rod 342 is movably connected between a rotatable ring 330 and one of the gates 338. As explained in more detail below, movement of the rotatable ring 330 facilitates movement of each gate 338 due to the connection between the rotatable ring 330 and the gate 338 via the corresponding rod 342. Figure 3C As shown, the fixing plate 336 includes an opening 350 having a size 351 (e.g., diameter) smaller than the size 353 (e.g., diameter) of both the fixing plate 336 and the rotatable ring 330.

[0034] During operation, the motor 300 is actuated and the gear screw 305 rotates about the first rotation axis 352 of the valve assembly 200. Rotation about the first rotation axis 352 causes the linear drive screw 310 to move in a linear direction (Z direction). Due to the connection between the linear drive screw 310 and the transmission coupling 315, the linear movement of the linear drive screw 310 causes the rotatable ring 330 to rotate around the second rotation axis 354 of the valve body 205. Figure 3B Rotate in the direction shown in 357).

[0035] When the rotatable ring 330 rotates about the second rotation axis 354, the fixed plate 336 is stationary. However, because multiple rods 342 are connected to the rotatable ring 330 and the gate 338, the gate 338 rotates about the third rotation axis 356. Figure 3B (As shown in the diagram) Rotation. Depending on the direction of rotation of the rotatable ring 330, the gate 338 moves relative to the opening 350 of the fixed plate 336. The relative movement of the gate 338 increases or decreases the size of the fluid flow orifice 360 ​​(i.e., the exposed portion of the opening 350 of the fixed plate 336). Changing the size of the fluid flow orifice 360 ​​facilitates control of the flow of fluid (such as precursor gas) through the valve body 205. The rotatable ring 330 includes a handle member 362, which facilitates a pivotable connection between the rotatable ring 330 and the transmission coupling 315.

[0036] Reference Figure 3B Each rod 342 is pivotally connected to a rotatable ring 330 via a first pivot pin 365. Similarly, each rod 342 is pivotally connected to a corresponding gate 338 via a second pivot pin 370. As described above, rotation of the rotatable ring 330 moves each gate 338 to open or close the fluid flow orifice 360.

[0037] Although three gates 338 are shown above, the number of diaphragm bodies 325 is not limited to that shown.

[0038] Figure 4A and 4B This is a schematic side view of a diaphragm body 325 showing different embodiments of the number of gates 338. Figure 4A Four gates 338 were displayed, while Figure 4B Six gates 338 are shown. Each gate 338 is connected to a corresponding rod 342. When the rotatable ring 330 (shown in Figures 3A-3C) moves in the direction 357, the gates 338 open or close around the opening 350. However, the number of gates 338 is not limited to three, four, or six, and may include fewer than three, fewer than two, or more than four or six.

[0039] Alternatively or additionally, the shape of the gate 338 is not limited to the triangle shown above. Similarly, the opening 350 is not the shape and / or location shown above.

[0040] Figure 5A and 5B This is a schematic side view showing the diaphragm body 325 of a single gate 338. The single gate 338 in... Figure 5A and 5B The display shows a semi-circular gate plate of size 500. Furthermore, Figure 5A An opening 505 in the fixing plate 336 is shown, shaped as a circle segment within or near the geometric center of the fixing plate 336. Furthermore, Figure 5B An opening 505 is shown that is off-center from the center of the fixed plate 336.

[0041] exist Figure 5A and Figure 5B In the illustrated embodiments, the transmission coupling 315 is directly connected to the semi-circular gate 500. In these embodiments, the movement of the linear drive screw 310 causes the semi-circular gate 500 to rotate in direction 510 relative to the fixed plate 336 and / or the opening 505. This changes the size of the fluid flow orifice 360, thereby controlling the flow of the precursor through the opening 505.

[0042] The materials used for the valve device 200 (especially the diaphragm body 325 of the valve device 200) as described herein include metallic materials resistant to precursor materials used in the processing chamber 100. Examples include aluminum, stainless steel, and other processing-compatible materials. In particular, portions of the diaphragm body 325 and / or valve body 205 are made of 400 series stainless steel due to the enhanced corrosion resistance of 400 series stainless steel to precursor gases. The metallic materials used for the diaphragm body 325 and / or valve body 205 may also include a coating of another material such as nickel (Ni).

[0043] The embodiments described herein relate to a valve device for controlling the flow of precursor gas in a substrate processing chamber. This valve device enables dynamic flow control during processing (i.e., in-situ processing). The valve device described herein reduces particle generation, thereby reducing defects on the processed substrate.

[0044] While the foregoing describes implementations of this disclosure, other and further implementations of this disclosure may be devised without departing from its basic scope, and the scope of this disclosure is determined by the appended claims.

Claims

1. A valve for a semiconductor processing chamber, the valve comprising: A valve body having an inlet conduit and an outlet conduit separated by a diaphragm body, wherein the diaphragm body comprises: Electric motor; A transmission coupling component, which is connected to the motor; A fixing plate, which is connected to a fixing body inside the valve body; A rotatable ring, the rotatable ring surrounding the fixed plate; A vacuum seal located between the rotatable ring and the fixed plate, wherein the vacuum seal is configured to maintain a seal with the outer edge of the fixed body; and One or more gates, the one or more gates being movably coupled to the transmission coupling, wherein the fixed plate includes an opening, and the one or more gates are movable relative to the opening.

2. The valve as claimed in claim 1, wherein, The motor includes an actuator housing, which includes a gear screw connected to the motor.

3. The valve as claimed in claim 2, wherein, The gear screw is connected to the linear drive screw, and the linear drive screw is connected to the transmission coupling.

4. The valve as claimed in claim 1, wherein, The fixed plate and each of the one or more gates comprises a metallic material.

5. The valve of claim 1, wherein each of the one or more gates is pivotally connected to the fixed plate.

6. The valve of claim 1, wherein each of the one or more gates is shaped as a semicircle.

7. The valve of claim 1, wherein each of the openings is offset from the center of the fixed plate.

8. A valve for a semiconductor processing chamber, the valve comprising: A valve body having an inlet conduit and an outlet conduit separated by a diaphragm body, wherein the diaphragm body comprises: Electric motor; A transmission coupling component, which is connected to the motor; A rotatable ring, the rotatable ring surrounding a fixed plate and spaced apart by a dynamic vacuum seal, wherein the dynamic vacuum seal is configured to maintain a seal as the rotatable ring rotates, and the rotatable ring is coupled to the transmission coupling; and One or more gates, the one or more gates being movably connected to the fixed plate by corresponding pivotable fasteners, wherein the fixed plate includes an opening and the one or more gates are movable relative to the opening.

9. The valve as claimed in claim 8, wherein, The motor includes an actuator housing, which includes a gear screw connected to the motor.

10. The valve of claim 9, wherein the gear screw is coupled to a linear drive screw and the linear drive screw is coupled to the transmission coupling.

11. The valve of claim 8, wherein the fixed plate, the pivotable fastener, and each of the one or more gates comprises a metallic material.

12. The valve of claim 8, wherein each of the one or more gates is pivotally connected to the fixed plate.

13. The valve of claim 8, wherein each of the one or more gates is connected to the rotatable ring via a rod.

14. The valve of claim 13, wherein the rod is connected to the rotatable ring via a first pivot pin.

15. The valve of claim 14, wherein the rod is connected to a corresponding gate via a second pivot pin at the opposite end of the rod.

16. The valve of claim 15, wherein each of the rod, the first pivot pin, and the second pivot pin comprises stainless steel.

17. A valve for a semiconductor processing chamber, the valve comprising: A valve body having an inlet conduit and an outlet conduit separated by a diaphragm body, wherein the diaphragm body comprises: Electric motor; A transmission coupling component, which is connected to the motor; A rotatable ring, the rotatable ring surrounding a fixed plate and spaced apart by a rotating vacuum seal, wherein the rotating vacuum seal is configured to maintain a seal as the rotatable ring rotates, and the rotatable ring is coupled to the transmission coupling; and One or more gates, the one or more gates being movably connected to the fixed plate by corresponding pivotable fasteners and movably connected to the rotatable ring by corresponding rods, wherein the fixed plate includes an opening and the one or more gates are movable relative to the opening.

18. The valve of claim 17, wherein the motor includes an actuator housing, the actuator housing including a gear screw coupled to the motor.

19. The valve of claim 18, wherein the gear screw is coupled to a linear drive screw and the linear drive screw is coupled to the transmission coupling.

20. The valve of claim 17, wherein the fixed plate, the pivotable fastener, and each of the one or more gates are made of stainless steel.

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