Chip Edge Ring Lifting Solution

Abstract

This document describes an apparatus including an adjustable-height edge ring and a method for using the apparatus. In one example, a substrate support assembly includes an adjustable-height edge ring, and the substrate support assembly is positioned within a processing chamber. The substrate support assembly includes an electrostatic chuck, an edge ring positioned on a portion of the electrostatic chuck, and one or more actuators for adjusting the height of the edge ring via one or more push pins. The adjustable-height edge ring can be used to compensate for corrosion of the edge ring over time. Furthermore, the adjustable-height edge ring can be removed from the processing chamber through a slit valve opening without venting the processing chamber or opening the processing chamber. The adjustable-height edge ring can be tilted via the one or more actuators to improve orientation uniformity at the substrate edge.

Description

[0001] This application is a divisional application of the invention patent application filed on December 30, 2016, with application number "201680067775.8" and invention title "Chip Edge Ring Lifting Solution". Technical Field

[0002] The examples disclosed herein are generally related to apparatus for processing substrates (e.g., semiconductor substrates). More specifically, processing kits and methods for using the kits are disclosed. Background Technology

[0003] When processing substrates (such as semiconductor substrates and display panels), the substrate is placed on a support within a processing chamber, while suitable processing conditions are maintained within the chamber to deposit, etch, form layers on, or otherwise treat the substrate surface. During etching, the plasma (which drives the etching process) may distribute unevenly across the substrate surface. This unevenness is particularly pronounced at the edges of the substrate surface. This unevenness contributes to poor processing results. Therefore, some processing chambers use edge rings (also known as processing kit rings) to increase plasma uniformity and improve processing yield.

[0004] However, conventional edge rings corrode over time. As the edge rings corrode, plasma uniformity across the substrate surface decreases, negatively impacting substrate processing. Because there is a direct correlation between plasma uniformity and the quality of the processed substrate, conventional processing chambers require frequent edge ring replacements to maintain plasma uniformity. However, frequent edge ring replacements result in undesirable downtime for preventative maintenance and increase the cost of consumable components such as edge rings.

[0005] Therefore, there is a need in this technical field for methods and apparatus for improving plasma homogeneity. Summary of the Invention

[0006] In one example, an apparatus for processing a substrate includes a substrate support, an electrostatic chuck disposed on the substrate support, and a processing kit surrounding the electrostatic chuck. The electrostatic chuck includes a first portion, a second portion, and a third portion. The processing kit includes: a support ring disposed on a surface of the third portion of the electrostatic chuck; an edge ring that is independently movable relative to the support ring and disposed on a surface of the second portion of the electrostatic chuck; and a cover ring disposed on the support ring, wherein the cover ring has a first surface that contacts the support ring.

[0007] In another example, the substrate support assembly includes: an electrostatic chuck comprising a first portion having a first surface, a second portion having a second surface, and a third portion having a third surface, and a processing kit. The processing kit includes: a support ring disposed on the third surface of the third portion of the electrostatic chuck and surrounding the second portion of the electrostatic chuck; an edge ring disposed on the second surface of the second portion of the electrostatic chuck; and a cover ring disposed on the support ring, wherein the cover ring surrounds the edge ring. The substrate support assembly further includes: one or more push pins positioned to raise the edge ring; and one or more actuators coupled to the one or more push pins, the actuators being operable to control the raising step of the one or more push pins.

[0008] In another example, a method includes the steps of: processing a first number of substrates while maintaining an edge ring in a first position within a processing chamber, raising the edge ring from the first position to a second position; and removing the edge ring from the processing chamber by a robot after all substrates of the first number of substrates have been removed from the processing chamber. When processing the first substrate of the first number of substrates, the first substrate is positioned on a first surface of a first portion of an electrostatic chuck, the edge ring is positioned on a second surface of a second portion of the electrostatic chuck and surrounded by a cover ring positioned on a support ring, and the support ring is positioned on a third surface of a third portion of the electrostatic chuck. Attached Figure Description

[0009] A more specific description of the disclosure, which has been briefly outlined above, can be obtained by referring to aspects of this disclosure (some of which are depicted in the accompanying drawings), allowing for a detailed understanding of the features of the disclosure described above. However, it should be noted that the accompanying drawings depict only general aspects of this disclosure and are therefore not to be construed as limiting its scope, as other equivalent aspects are permissible.

[0010] Figure 1 This is a schematic cross-sectional side view of a processing chamber according to an example of this disclosure.

[0011] Figures 2A to 2B As an example based on this disclosure Figure 1 Enlarged schematic cross-sectional side view of the substrate support assembly of the processing chamber.

[0012] Figure 3 This is an enlarged schematic cross-sectional side view of a substrate support assembly according to another example of this disclosure.

[0013] Figure 4 This is an enlarged schematic cross-sectional side view of a substrate support assembly according to another example of this disclosure.

[0014] Figure 5 This is a flowchart of the method based on the examples described in this article.

[0015] Figures 6A to 6C Based on the examples of this disclosure, it is depicted schematically. Figure 5 The substrate surface at various stages of the method.

[0016] Figure 7 This is a schematic cross-sectional partial side view of a substrate support assembly according to another example of this disclosure.

[0017] Figures 8A to 8B Examples based on this disclosure Figure 7 A schematic cross-sectional side view of the substrate support assembly.

[0018] Figure 9 As an example based on this disclosure Figure 7 A schematic top view of the substrate support assembly.

[0019] Figure 10A A schematic top view of an edge ring according to an example of this disclosure.

[0020] Figure 10B As an example based on this disclosure Figure 10A A schematic side view of a portion of the edge ring.

[0021] Figure 11A This is a schematic top view of a support ring according to an example of this disclosure.

[0022] Figure 11B As an example based on this disclosure Figure 11A A magnified top view of a portion of the support ring.

[0023] Figure 12 This is a schematic cross-sectional partial side view of a substrate support assembly according to another example of this disclosure.

[0024] For ease of understanding, the same reference numerals have been used (where possible) to designate the same elements shared by these figures. Furthermore, elements of one example can be advantageously adapted for use in other examples described herein. Detailed Implementation

[0025] This document describes an apparatus including an adjustable-height edge ring and a method for using the apparatus. In one example, a substrate support assembly includes an adjustable-height edge ring, and the substrate support assembly is positioned within a processing chamber. The substrate support assembly includes an electrostatic chuck, an edge ring positioned on a portion of the electrostatic chuck, and one or more actuators for adjusting the height of the edge ring via one or more push pins. The adjustable-height edge ring can be used to compensate for corrosion of the edge ring over time. Furthermore, the adjustable-height edge ring can be removed from the processing chamber through a slit valve opening without venting the processing chamber or opening the processing chamber. The adjustable-height edge ring can be tilted via the one or more actuators to improve orientation uniformity at the substrate edge.

[0026] Figure 1 This is a schematic cross-sectional view of a processing chamber 100 according to an example of the present disclosure. The processing chamber 100 includes a chamber body 101 and a cover 103 disposed thereon, the chamber body and the cover together defining an internal volume. The chamber body 101 is generally coupled to an electrical ground 107. A substrate support assembly 111 is disposed within the internal volume to support a substrate 109 on the substrate support assembly during processing. The processing chamber 100 also includes an inductively coupled plasma device 102 for generating plasma within the processing chamber 100 and a controller 155 adapted to control an example of the processing chamber 100.

[0027] The substrate support assembly 111 includes one or more electrodes 153 coupled to a bias source 119 via a matching network 120 to facilitate biasing of the substrate 109 during processing. While other frequencies and powers may be provided depending on the specific application, the bias source 119 may illustratively be a source of up to about 1000W (but not limited to about 1000W) of RF energy and a frequency, for example, about 13.56MHz. The bias source 119 may be capable of generating either continuous or pulsed power, or both. In some examples, the bias source 119 may be a DC or pulsed DC source. In some examples, the bias source 119 may be capable of providing multiple frequencies. The one or more electrodes 153 may be coupled to a clamping power supply 160 to facilitate clamping of the substrate 109 during processing. The substrate support assembly 111 may include a processing kit (not shown) surrounding the substrate 109. Various embodiments of the processing kit are described below.

[0028] An inductively coupled plasma device 102 is disposed above a cover 103 and configured to inductively couple RF power into a processing chamber 100 to generate plasma within the processing chamber 100. The inductively coupled plasma device 102 includes a first coil 110 and a second coil 112 disposed above the cover 103. The relative positions, diameter ratios, and / or number of turns in each coil 110, 112 can be adjusted as needed to control the profile or density of the generated plasma. Each of the first coil 110 and the second coil 112 is coupled to an RF power supply 108 via a matching network 114 through an RF feed structure 106. Although other frequencies and powers may be used depending on the specific application, the RF power supply 108 is illustratively capable of generating up to approximately 4000W (but not limited to approximately 4000W) at an adjustable frequency ranging from 50kHz to 13.56MHz.

[0029] In some examples, a power divider 105 (e.g., a voltage divider capacitor) may be provided between the RF feed structure 106 and the RF power supply 108 to control the relative amount of RF power supplied to the respective first and second coils. In some examples, the power divider 105 may be incorporated into the matching network 114.

[0030] A heater element 113 may be disposed on top of a cover 103 to facilitate heating the interior of the processing chamber 100. The heater element 113 may be disposed between the cover 103 and the first coil 110 and the second coil 112. In some examples, the heater element 113 may include a resistance heating element and may be coupled to a power source 115 (e.g., AC power), wherein the power source is configured to provide sufficient energy to control the temperature of the heater element 113 within a desired range.

[0031] During operation, a substrate 109 (e.g., a semiconductor wafer or other substrate suitable for plasma processing) is placed on a substrate support assembly 111, and processing gas is supplied into the internal volume of the chamber body 101 via an input port 117 from a gas panel 116. The processing gas is ignited into plasma 118 within the processing chamber 100 by applying power from an RF power supply 108 to a first coil 110 and a second coil 112. In some examples, power from a bias source 119 (e.g., an RF source or a DC power supply) may also be supplied to electrodes 153 within the substrate support assembly 111 via a matching network 120. The pressure within the processing chamber 100 may be controlled using a valve 121 and a vacuum pump 122. The temperature of the chamber body 101 may be controlled using a liquid-filled conduit (not shown) extending through the chamber body 101.

[0032] Processing chamber 100 includes a controller 155 to control the operation of processing chamber 100 during processing. Controller 155 includes a central processing unit (CPU) 123, memory 124, and support circuitry 125 for CPU 123, and facilitates control of components of processing chamber 100. Controller 155 can be one of any type of general-purpose computer processor used in industrial environments to control various chambers and subprocessors. Memory 124 stores software (source code or object code) that can be executed or invoked to control the operation of processing chamber 100 in the manner described herein.

[0033] Figure 2A and Figure 2B This is an enlarged schematic diagram of a substrate support assembly 111 of a processing chamber 100 according to an example described herein. The substrate support assembly 111 includes a processing kit 203, a substrate support 205, and an electrostatic chuck 229. The electrostatic chuck 229 is disposed on the top surface of the substrate support 205 and surrounded by the processing kit 203. The substrate support 205 includes a ground plane 226 surrounding an insulating plate 227 and a facility plate 228 assembled in a vertical stack. The substrate support 205 also includes a sleeve 230 connecting the facility plate 228 and the electrostatic chuck 229 to isolate the RF thermal electrostatic chuck 229 from the ground plane 226. The sleeve 230 may be made of quartz. The processing kit 203 includes a cover ring 246, a first edge ring 242, and a second edge ring 244. The cover ring 246 is positioned on the upper surface of a vertical edge of the ground plane 226 and includes a notch for engaging the sleeve 230. The cover ring 246 can be made of quartz or any other plasma-resistant material.

[0034] Facility plate 228 is positioned above the lower portion of ground plane 226 and between insulating plate 227 and electrostatic clamp 229. Electrostatic clamp 229 may include a plurality of electrodes 153 (four shown) embedded in insulating material 236. Electrodes 153 are coupled to clamping power supply 160 (shown in…). Figure 1 (In the middle) to facilitate clamping the substrate 109 to the upper surface of the electrostatic chuck 229. One or more heating or cooling channels may optionally be formed in the insulating material 236 to facilitate temperature control of the substrate 109 during processing. In some aspects, the electrode 153 is coupled to the bias source 119 (illustrated in the middle) via a matching network 120. Figure 1 The cathode (in the middle).

[0035] A first edge ring 242 is positioned on an electrostatic chuck 229. The first edge ring 242 surrounds and abuts the radially outward edge of the substrate 109. The first edge ring 242 facilitates protection of the edges of the substrate 109 during processing and additionally provides lateral support to the substrate 109 during processing. The first edge ring 242 may be stationary relative to the substrate 109 during processing.

[0036] The second edge ring 244 is positioned on the first edge ring 242 and radially outward relative to the first edge ring 242. The radially outward edge 202 and the bottom surface 204 of the second edge ring 244 contact the cover ring 246. The second edge ring 244 is concentrically positioned relative to the first edge ring 242 and the substrate 109. The second edge ring 244 assists the first edge ring 242 in providing lateral support to the substrate and reducing unwanted material etching or deposition at the radially outward edge of the substrate 109.

[0037] The substrate support assembly 111 may also include one or more actuators 247 (one illustrated), such as stepper motors or linear actuators, etc. In one example, the one or more actuators 247 are housed in the ground plane 226. However, it is contemplated that the actuators 247 may be positioned outside the substrate support assembly 111. Each actuator 247 is adapted to engage or contact one or more push pins 248. The one or more push pins 248 extend from the ground plane 226 through the facility plate 228 and the sleeve 230 and contact the cover ring 246. Actuation of the one or more push pins 248 causes vertical actuation or displacement of the cover ring 246 and the second edge ring 244 relative to the upper surface of the substrate 109 and / or the first edge ring 242. It is contemplated that the first edge ring 242 may be omitted in some aspects. The position of the second edge ring 244 can be adjusted to a height that adapts to the etching of the second edge ring 244 in order to increase plasma uniformity across the substrate surface during processing.

[0038] One or more bellows (illustrated in) Figure 7 (middle) can be positioned around each of the one or more push pins 248 to reduce the processing chamber 100 (illustrated in Figure 1 Particulate contamination within the (middle) region. Furthermore, one or more push pin guides 239 (e.g., guide sleeves or bearings) may be positioned around each push pin 248 within the sleeve 230 to facilitate actuation of each push pin 248. The push pin guides 239 provide a bearing surface for the push pins 248. In one example, the one or more actuators 247, the one or more push pins 248, the cover ring 246, and the second edge ring 244 may be referred to as an adjustable-height edge ring assembly 249. In one example, the edge ring assembly 249 may be further integrated with a controller 155 (illustrated in...). Figure 1 The edge ring assembly 249 is connected to and operably controlled by the controller. In another example, the cover ring 246 may be omitted from the edge ring assembly 249. In such examples, the one or more push pins 248 may directly contact and actuate the second edge ring 244.

[0039] In one example, the first edge ring 242 may be made of silicon. In one example, the second edge ring 244 may be made of silicon. In a particular example, the second edge ring 244 may be made of silicon carbide (SiC). In one example, the one or more actuators 247 are microstepping motors. In another example, the one or more actuators 247 are piezoelectric motors. In one example, the one or more push pins 248 are made of quartz or sapphire. In one example, the controller may be a general-purpose computer including memory for storing software. The software may include instructions for detecting corrosion of the second edge ring 244 and then directing the one or more actuators 247 to raise the one or more push pins 248, such that the second edge ring 244 is raised to a desired height.

[0040] Figure 3 This is an enlarged schematic partial view of a substrate support assembly 311 according to another example. Similar to substrate support assembly 111, substrate support assembly 311 includes a processing kit 304, a substrate support member 306, and an electrostatic chuck 303. The electrostatic chuck 303 is disposed on the top surface of the substrate support member 306 and surrounded by the processing kit 304. The substrate support member 306 includes a ground plane 226, an insulating plate 227, a facility plate 228, and a sleeve 305.

[0041] The processing kit 304 includes a first edge ring 342, a second edge ring 344, and a cover ring 346. The first edge ring 342 is positioned near the radially outward edge of the substrate 109 to reduce unwanted processing effects at the edge of the substrate 109. The second edge ring 344 is positioned radially outward relative to and above the first edge ring 342. The second edge ring 344 may be positioned radially inward relative to and above the cover ring 346. In its lowest position, the second edge ring 344 may have a lower surface 302 that contacts one or more of the first edge ring 342, the sleeve 230, and the cover ring 346. In its lowest position, the second edge ring 344 may share a coplanar upper surface with the cover ring 346. The substrate support assembly 311 may be similar to the substrate support assembly 111; however, the one or more push pins 248 are positioned to contact the second edge ring 344. The second edge ring 344 may be made of the same material as the second edge ring 244. The one or more push pins 248 directly actuate the second edge ring 344, rather than indirectly actuating it through the actuation of the cover ring 346. In such examples, the cover ring 346 remains stationary during height adjustment of the second edge ring 344. The substrate support assembly 311 can be used to replace the substrate support assembly 111.

[0042] The substrate support assembly 311 includes a height-adjustable edge ring assembly 349, which includes one or more actuators 247, one or more push pins 248, and a second edge ring 344. The edge ring assembly 349 may be similar to edge ring assembly 249; however, the one or more push pins 248 of the edge ring assembly 349 are positioned to pass through the vertical wall of the ground plane 226 and through the cover ring 346. Therefore, the push pins 248 of the edge ring assembly 349 do not pass through the insulating plate 227 and the sleeve 230, thereby eliminating holes formed through the insulating plate 227 and the sleeve 230. Furthermore, because the edge ring assembly 349 actuates the second edge ring 344 and allows the cover ring 346 to remain stationary, the substrate support assembly 311 can reduce particle generation due to the reduced number of moving parts. The first edge ring 342 may be made of the same material as the first edge ring 242.

[0043] Figure 4 This is an enlarged schematic partial view of a substrate support assembly 411 according to another example. The substrate support assembly 411 may be similar to and can be used to replace the substrate support assembly 311. The substrate support assembly 411 includes a processing kit 414, a substrate support 416, and an electrostatic chuck 303. The electrostatic chuck 303 is disposed on the top surface of the substrate support 416 and surrounded by the processing kit 414. The substrate support 416 includes a ground plane 226, an insulating plate 227, a facility plate 228, and a sleeve 418. The processing kit 414 includes a first edge ring 442, a second edge ring 444, and a cover ring 446. The first edge ring 442 is positioned on the radially outward upper surface 402 of the electrostatic chuck 303. The second edge ring 444 is positioned radially outward and upward relative to the first edge ring 442. The lower surface 404 of the second edge ring 444 may be positioned to contact the surface 406 of the first edge ring 442 and the upper surface 408 of a first portion of the sleeve 418. The cover ring 446 is positioned radially outward relative to the second edge ring 444 and is positioned to contact the upper surface 410 of the second portion of the sleeve 418 and the upper surface 412 of the vertical portion of the grounding plate 226.

[0044] The substrate support assembly 411 includes a height-adjustable edge ring assembly 449. The edge ring assembly 449 includes one or more actuators 247, one or more push pins 248, and a second edge ring 444. The one or more actuators 247 actuate the one or more push pins 248 to raise the second edge ring 444 relative to the upper surface of the substrate 109 and relative to the first edge ring 442 and the cover ring 446. Similar to the substrate support assembly 311, the cover ring 446 remains stationary while the second edge ring 444 is raised. Due to the reduced number of movable parts, the possibility of particle generation during processing is reduced. However, unlike the substrate support assembly 311, the push pins 248 of the substrate support assembly 411 are positioned to pass through the insulating plate 227 and the sleeve 418. The one or more push pins 248 contact the lower surface 404 of the second edge ring 444 to transmit movement from the actuators 247 to the second edge ring 444. In one example, the first edge ring 442 may be made of silicon. In one example, the second edge ring 444 may be made of silicon. In a particular example, the second edge ring 444 may be made of silicon carbide (SiC).

[0045] Figure 5 This is a flowchart of method 550 based on the example described in this document. Figures 6A to 6C The plasma uniformity across the substrate surface at a portion of the substrate support assembly 660 at various stages of the method 550 described herein will be depicted in conjunction with the discussion. Figure 5 and Figures 6A to 6C The process for adjusting the height of an adjustable-height edge ring (e.g., second edge rings 244, 344, 444) to compensate for corrosion of the ring is further described. This method can be stored on and executed by a controller (e.g., controller 155).

[0046] Method 550 begins at operation 552. In operation 552, a first number of substrates are processed. During the processing of the first number of substrates, the top surface 602 of the edge ring 644 is coplanar with the top surface 604 of the substrate 109, as... Figure 6A As shown in the figure. Edge ring 644 can be a second edge ring 244, 344, or 444. When the top surface 602 of edge ring 644 and the top surface 604 of substrate 109 are coplanar, plasma is uniformly distributed on substrate 109, so that plasma sheath 662 runs parallel to the top surface 604 of substrate 109.

[0047] After processing the first batch of substrates, the edge ring 644 may be etched, such as Figure 6BAs shown in the diagram, as the edge ring 644 is etched, the total thickness of the edge ring 644 decreases, and the top surface 602 of the edge ring 644 is no longer coplanar with the top surface 604 of the substrate 109. Instead, the top surface 602 of the edge ring 644 is below the top surface 604 of the substrate 109. When the top surface 602 of the edge ring 644 is no longer coplanar with the top surface 604 of the substrate 109, the plasma becomes unevenly distributed across the top surface 604 of the substrate 109. More specifically, when the top surface 602 of the edge ring 644 is below the top surface 604 of the substrate 109, there is “roll-down” plasma at the edge 606 of the substrate 109, as indicated by the plasma sheath 662. In other words, the plasma sheath 662 is no longer parallel to the top surface 604 of the substrate 109. This plasma inhomogeneity at the substrate edge 606 creates uneven processing conditions, which reduces the processing yield of the substrate 109 on which devices can be formed.

[0048] Accordingly, in operation 554, edge ring 644 is raised from a first position above edge ring 642 to a second position above edge ring 642 based on a first etching amount of edge ring 644. Edge ring 642 can be a first edge ring 242, 342, or 442. Edge ring 644 can be a second edge ring 244, 344, or 444. Edge ring 644 is raised to maintain a linear plasma sheath 662 (i.e., maintain the plasma sheath 662 parallel to the top surface 604 of substrate 109), as... Figure 6C As shown in the diagram. In one example, the edge ring 644 can be raised to a position such that the top surface 602 of the edge ring 644 in the etched state is substantially coplanar with the top surface 604 of the substrate 109. A controller (e.g., Figure 1 The controller 155 shown determines the adjustable height of the edge ring 644. The controller can be used to detect a first amount of corrosion on the edge ring 644. The controller can then instruct one or more actuators 247 to raise the height of the edge ring 644 via one or more push pins to compensate for the first amount of corrosion. The distance between the first and second positions can be from approximately 0.05 mm to approximately 5 mm.

[0049] Alternatively, instead of detecting the amount of corrosion on the edge ring 644, the edge ring 644 can be adjusted after processing an empirically determined number of substrates. Alternatively, the edge ring 644 can be adjusted in response to measurements of plasma sheath deformation.

[0050] In operation 556, a second number of substrates are processed while the edge ring 644 is held in the adjusted position. In the adjusted position, the edge ring 644 is oriented with the plasma sheath 664 coplanar with the top surface 604 of the substrate 109. After processing the second number of substrates, method 550 may further include the steps of detecting a second amount of etching on the edge ring 644 and raising the edge ring 644 from the second position to a third position. The distance between the second and third positions may be from about 0.05 mm to about 5 mm. The operation of method 550 may be repeated as more substrates are processed and further etching of the edge ring 644 occurs.

[0051] Figure 7 This is a schematic cross-sectional side view of a substrate support assembly 700 according to another example of this disclosure. The substrate support assembly 700 may be... Figure 1 The substrate support assembly 111 shown is illustrated. The substrate support assembly 700 includes a processing kit 703, a substrate support 705, an electrostatic chuck 712, a cathode pad 726, and a cover 728. The electrostatic chuck 712 is disposed on the top surface of the substrate support 705 and surrounded by the processing kit 703. The substrate support 705 may include a base 702, a ground plane 704 disposed on the base 702, an insulating plate 706 disposed on the ground plane 704, a facility plate 708 disposed on the insulating plate 706, a cooling plate 710 disposed on the facility plate 708, and a sleeve 724 disposed on the insulating plate 706 and surrounding the facility plate 708, the cooling plate 710, and the electrostatic chuck 712. The sleeve 724 may be made of quartz. The electrostatic chuck 712 may be bonded to the cooling plate 710 using a bonding material. A plurality of electrodes 714 may be embedded in the electrostatic chuck 712. The electrostatic chuck 712 may include a first portion 716 and a second portion 720, the first portion having a first surface 718 for supporting a substrate, and the second portion extending radially outward from the first portion 716. The second portion 720 may include a second surface 722.

[0052] The processing kit 703 includes a support ring 730, an edge ring 732, and a cover ring 734. The support ring 730 is disposed on a second surface 722 of a second portion 720 of an electrostatic chuck 712, and surrounds a first portion 716 of the electrostatic chuck 712. The support ring 730 may be made of silicon or SiC. The support ring 730 may be concentrically positioned relative to the first portion 716 of the electrostatic chuck 712. The support ring 730 may have an inner radius of less than 100 micrometers, which is larger than the radius of the first portion 716 of the electrostatic chuck 712. The edge ring 732 may be disposed on the support ring 730, and the edge ring 732 may be made of silicon, SiC, or other suitable materials. The edge ring 732 may be concentrically positioned relative to the first portion 716 of the electrostatic chuck 712. The cover ring 734 may be disposed on a sleeve 724, and the cover ring 734 surrounds the edge ring 732 and the support ring 730.

[0053] The substrate support assembly 700 also includes one or more actuators 736 (one illustrated) (e.g., a stepper motor), one or more pin holders 737 (one illustrated), one or more bellows 735 (one illustrated), and one or more push pins 733 (one illustrated). The push pins 733 may be made of quartz, sapphire, or other suitable materials. Each pin holder 737 is coupled to a corresponding actuator 736, each bellows 735 surrounds a corresponding pin holder 737, and each push pin 733 is supported by a corresponding pin holder 737. Each push pin 733 is positioned to pass through an opening formed in each of the ground plane 704, the insulating plate 706, and the sleeve 724. One or more push pin guides (e.g., Figure 2B The push pin guide 239 shown may be positioned around an opening in the ground plane 704, the insulating plate 706, and / or the sleeve 724. The one or more actuators 736 may raise the one or more pin holders 737 and the one or more push pins 733, which in turn raises or tilts the edge ring 732.

[0054] Figures 8A to 8B This is a schematic cross-sectional side view of a substrate support assembly 700 according to an example of this disclosure. Figure 8AAs shown, the push pin 733 is positioned to pass through the opening 812 of the sleeve 724 and to contact the edge ring 732 through the opening 806 formed in the support ring 730. The edge ring 732 has a first surface 814 and a second surface 816 opposite to the first surface 814. One or more cavities 808 (one shown) may be formed in the second surface 816 of the edge ring 732. The support ring 730 may include a first surface 813 for supporting the edge ring 732 and a second surface 815 opposite to the first surface 813. The second surface 815 may contact the second surface 722 of the second portion 720 of the electrostatic chuck 712. Each push pin 733 may include a chamfered tip 810 positioned in a corresponding cavity 808 of the edge ring 732, and the chamfered tip 810 may restrain the movement of the edge ring 732 in a horizontal or radial direction. Furthermore, the horizontal or radial movement of the support ring 730 is constrained by the push pins 733 because the radial clearance of each push pin 733 within the opening 806 is very small, for example, between 0.0001 inches and 0.0010 inches, such as about 0.0005 inches. The radial clearance of each push pin 733 within the opening 812 of the sleeve 724 may be similar to the radial clearance of the push pins 733 within the opening 806. To further constrain the movement of the edge ring 732 in the horizontal or radial direction, the support ring 730 may include an inner edge 804 near the first portion 716 of the electrostatic chuck 712. The inner edge 804 may have a greater thickness than the rest of the support ring 730. In other words, the inner edge 804 includes a surface 818 located at a higher height than the first surface 813 of the support ring 730. The edge ring 732 can be positioned on the first surface 813 of the support ring 730, while the inner surface 820 of the edge ring 732 can contact the inner edge 804 of the support ring 730. This prevents displacement of the edge ring 732 relative to the support ring 730 in the horizontal or radial direction.

[0055] After processing a number of substrates in the processing chamber 100, the edge ring 732 may corrode, and its first surface 814 may not be coplanar with the processing surface of the substrate (e.g., substrate 802) mounted on the first portion 716 of the electrostatic chuck 712. The edge ring 732 can be raised or lowered by one or more push pins 733 (e.g., three push pins 733) so that the first surface 814 of the edge ring 732 is coplanar with the processing surface of the substrate 802 mounted on the first portion 716 of the electrostatic chuck 712. Therefore, the edge ring 732 can be supported by the one or more push pins 733 during processing. Because the radial clearance of the push pins 733 within the openings 806, 812 is small, the movement of the edge ring 732 in the horizontal or radial direction is constrained when the edge ring 732 is supported by the one or more push pins 733. Because the movement of the edge ring 732 in the horizontal or radial direction is constrained, the edge ring 732 is concentrically positioned relative to the first portion 716 of the electrostatic chuck 712. Because the substrate 802 is concentrically positioned relative to the first portion 716 of the electrostatic chuck 712, the edge ring 732 is also concentrically positioned relative to the substrate 802 when supported by the support ring 730 or by one or more push pins 733. Concentrically positioning the edge ring 732 relative to the substrate 802 and ensuring that the first surface 814 of the edge ring 732 is coplanar with the processing surface of the substrate 802 improves plasma uniformity across the substrate processing surface during processing.

[0056] Sometimes, the substrate may suffer from orientational inhomogeneities near its edges. To adjust the orientation of the edge processing, the edge ring 732 can be tilted by one or more actuators 736 via one or more push pins 733. The one or more actuators 736 can raise the one or more push pins 733 to different heights, while the edge ring 732 is tilted relative to the processed surface of the substrate 802. By tilting the edge ring 732 (making the edge ring 732 non-coplanar with the processed surface of the substrate 802), the plasma sheath and / or chemistry at specific locations near the substrate edge are altered, and the orientational inhomogeneities near the substrate edge are reduced.

[0057] To raise and lower the edge ring 732 while it is coplanar with the processed surface of the substrate 802, one or more actuators 736 can be calibrated so that the actuators 736 raise one or more push pins 733 to the same height. One method of calibrating the actuators 736 is to slowly raise each push pin 733 until the person calibrating the actuators 736 feels that each push pin 733 is slightly above the first surface 718 of the first portion 716 of the electrostatic chuck 712. Another method of calibrating the actuators 736 is to use an acoustic sensor to listen for the contact of the push pins 733 against the edge ring 732, to use an accelerometer on the edge ring 732 to sense the contact, or to look for servo position feedback (later error or servo torque) to sense the contact.

[0058] Another benefit of being able to raise the edge ring 732 is that it can be raised to a sufficient height so that a vacuum robot blade (not shown) can enter the processing chamber through a slit valve below the edge ring 732 and remove it from the processing chamber without venting or opening the chamber. The edge ring 732 can be removed from the processing chamber by a vacuum robot after several substrates have been removed. A new edge ring 732 can be placed in the processing chamber by the vacuum robot. The new edge ring 732 can be made of different materials or can have different shapes to optimize the results of a specific process. Furthermore, the ability to move the edge ring 732 in and out of the processing chamber without venting or opening the chamber allows the processing chamber to operate for longer periods between wet cleaning cycles, which are expensive and result in lost productivity.

[0059] An exemplary process sequence for removing edge ring 732 begins by raising and lowering edge ring 732 to a height above the substrate transfer plane by one or more push pins 733; extending a vacuum robot blade into the processing chamber at a position below edge ring 732; lowering edge ring 732 onto the vacuum robot blade by one or more push pins 733; removing the vacuum robot blade, together with edge ring 732 disposed on the vacuum robot blade, from the processing chamber and into a loadlock chamber (not shown); detaching edge ring 732 from the vacuum robot blade by raising the loadlock chamber elevator (not shown) or lowering the vacuum robot blade; venting the loadlock chamber; removing edge ring 732 from the loadlock chamber using a factory interface robot (not shown); and placing edge ring 732 into a storage location (the storage location may have multiple locations for holding different or similar edge rings).

[0060] Figure 8B This is a schematic cross-sectional side view of a substrate support assembly 800 according to another example of this disclosure. Figure 8BAs shown, the substrate support assembly 800 includes a processing kit 801, a substrate support 705, and an electrostatic chuck 803. The processing kit 801 may surround the electrostatic chuck 803. The electrostatic chuck 803 may include a first portion 805, a second portion 807 extending radially outward from the first portion 805, and a third portion 830 extending radially outward from the second portion 807. The second portion 807 has a surface 809, and the third portion 830 has a surface 832. The processing kit 801 includes a cover ring 840, a support ring 850, and an edge ring 852. The sleeve 724 may include one or more cavities 844, and the cover ring 840 may include one or more protrusions 842. The support ring 850 may be disposed on the surface 832 of the third portion 830 of the electrostatic chuck 803, and a gap 811 may be formed between the support ring 850 and the sleeve 724. The support ring 850 may be disposed on the surface 843 of the sleeve 724. Support ring 850 may be made of the same material as support ring 730. One or more openings 860 may be formed in support ring 850, and the one or more push pins 733 may be positioned through the openings 860. Edge ring 852 may be disposed on the second surface 809 of the second portion 807 of electrostatic chuck 803. Edge ring 852 may be adjusted independently of support ring 850. Edge ring 852 may be made of the same material as edge ring 732. Edge ring 852 may include one or more cavities 854 for engaging the one or more push pins 733 with chamfered tips 810. The chamfered tips 810 may constrain the movement of edge ring 852 in the horizontal or radial direction.

[0061] The support ring 850 can be tightly fitted between the second portion 807 of the electrostatic chuck 803 and one or more protrusions 842 of the cover ring 840. The cover ring 840 may include a top surface 862, a first surface 864 opposite to the top surface 862, a second surface 866 opposite to the top surface 862, a third surface 868 opposite to the top surface 862, and a fourth surface 870 opposite to the top surface 862. The first surface 864 may contact and be supported by the support ring 850, while gaps are formed between surfaces 866, 868 and the sleeve 724, and between surface 870 and the cover 728. The cover ring 840 may also include a fifth surface 872 connecting surfaces 866, 868 and a sixth surface 874 connecting surfaces 864, 866. Each cavity 844 of the one or more cavities of the sleeve 724 may include the first surface 876 and the second surface 878 opposite to the first surface 876. The gaps formed between the first surface 876 and the fifth surface 872, and between the second surface 878 and the sixth surface 874, can be small, for example, 0.01 inches or less, which restricts the movement of the cover ring 840 in the horizontal or radial direction. Because the support ring 850 fits tightly between the sixth surface 874 of the cover ring 840 and the second portion 807 of the electrostatic chuck 803, the movement of the support ring 850 in the horizontal or radial direction is also restricted. The edge ring 852 can be concentrically positioned relative to the substrate (not shown) when supported by the second surface 809 of the electrostatic chuck 803 or by one or more push pins 733. The edge ring 852 can be removed from the processing chamber by the same method as removing the edge ring 732.

[0062] Figure 9 As an example based on this disclosure Figure 7 A schematic top view of the substrate support assembly 700. (See attached image.) Figure 9 As shown, the substrate support assembly 700 includes an electrostatic chuck 712 having a first portion 716 with a surface 718, the electrostatic chuck being surrounded by an edge ring 732 (or 852), the edge ring being surrounded by a cover ring 734 (or 840). A cover 728 surrounds a sleeve 724 (…). Figure 8A and Figure 8B Edge ring 732 (or 852) can be raised at position 902 by one or more push pins 733. Figures 8A to 8B In one example, there are three push pins 733 for raising the edge ring 732 (or 852) at three positions 902. Positions 902 or push pins 733 can be spaced 120 degrees apart and can have the same radial distance on the edge ring 732 (or 852), as shown below. Figure 9As shown in the diagram, the edge ring 732 (or 852) may have an outer edge 904 and an inner edge 906. The inner edge 906 may include a first portion 907 and a second portion 908. The outer edge 904 may be substantially circular. The first portion 907 of the inner edge 906 may be substantially circular and substantially parallel to the outer edge 904. The second portion 908 of the inner edge 906 may be substantially linear and may not be substantially parallel to the outer edge 904. The second portion 908 may conform to a linear segment 910 on the electrostatic chuck 712 for locking by the electrostatic chuck 712.

[0063] Figure 10A A schematic top view of an edge ring 732 (or 852) according to an example of this disclosure. Figure 10A As shown, the edge ring 732 (or 852) includes an outer edge 904, an inner edge 906, and a second portion 908. The distance (i.e., width) between the outer edge 904 and the inner edge 906 can be varied to optimize different processes or processing chemistry. The radius of the edge ring 732 (or 852) can also vary depending on the radius of the electrostatic chuck.

[0064] Figure 10B As an example based on this disclosure Figure 10A A schematic side view of a portion of the edge ring 732 (or 852). (See attached image.) Figure 10B As shown, the edge ring 732 (or 852) includes one or more cavities 808 (or 854) for engaging with the beveled tips 810 of the one or more push pins 733. The cavities 808 (or 854) may have any suitable shape. In one example, each cavity 808 (or 854) has a tapered V-shape, such as... Figure 10B As shown in the image.

[0065] Figure 11A This is a schematic top view of a support ring 850 according to an example of this disclosure. Figure 11A As shown, support ring 850 (or Figure 8A The 730 shown includes an outer edge 1102, an inner edge 1104, and one or more openings 860 (or Figure 8A (as shown in 806). In one example, there are three openings 860, as shown. Figure 11A As shown, the opening 860 is formed between the outer edge 1102 and the inner edge 1104. The distance (i.e., width) between the outer edge 1102 and the inner edge 1104 can be varied to optimize different processes or processing chemistry. The radius of the support ring 850 can also vary depending on the radius of the electrostatic chuck.

[0066] Figure 11B As an example based on this disclosure Figure 11A A magnified top view of a portion of the support ring 850. (See attached image.) Figure 11BAs shown, the inner edge 1104 may optionally include one or more protrusions 1106. The one or more protrusions 1106 may be positioned near the one or more openings 860. The one or more protrusions 1106 are used to maintain concentricity with respect to the electrostatic chuck 712 in the event of thermal expansion of both the electrostatic chuck 712 and the support ring 850 during processing.

[0067] Figure 12 This is a schematic cross-sectional side view of a substrate support assembly 700 according to another example of this disclosure. Figure 12 As shown, the one or more push pins 733 may be positioned through an opening 1202 formed in the cathode pad 726 and through an opening 1204 formed in the cover 728. The cover ring 734 may include one or more cavities 1206 for engaging the beveled tips 810 of the one or more push pins 733. The one or more push pins 733 may raise or tilt the cover ring 734 in the same manner as raising the edge ring 732 or 852. In one example, the one or more push pins 733 are used to raise or tilt both the cover ring 734 and the edge ring 732 or 852 to improve plasma uniformity across the substrate processing surface.

[0068] Examples of this disclosure result in increased plasma uniformity across the surfaces of substrates processed in the processing chamber. Since there is a direct correlation between plasma uniformity and processing yield, increasing plasma uniformity leads to increased processing yield. Furthermore, the processing chambers of this disclosure experience less downtime for preventative maintenance by extending the usable lifespan of the edge rings.

[0069] Although the foregoing description is an example of this disclosure, other and further examples of this disclosure may be designed without departing from the basic scope of this disclosure, which is defined by the following claims.

Claims

1. A processing kit for processing a substrate, the processing kit comprising: A support ring, the support ring including an upper surface having a radially inner edge disposed at a first height and a radially outer edge disposed at a second height less than the first height, the radially inner edge having a thickness greater than the radially outer edge; An edge ring is disposed on the support ring, the inner surface of the edge ring being in contact with the radial inner edge of the support ring; A cover ring is disposed radially outside the edge ring, the edge ring being independently movable relative to the support ring and the cover ring; as well as One or more push pins are disposed radially inside the inner diameter of the cover ring, the one or more push pins being operable to raise the edge ring, the one or more push pins being located within an opening in the support ring, wherein the radial clearance of each of the one or more push pins within the opening is configured such that radial movement of the support ring is constrained by the one or more push pins.

2. The processing kit of claim 1, wherein the cover ring is made of quartz.

3. The processing suite of claim 1, further comprising: An actuation mechanism comprising one or more push pins, the actuation mechanism being configured to actuate the edge ring such that the distance between the bottom surface of the edge ring and the radial outer edge of the support ring changes.

4. The processing kit of claim 1, wherein the one or more push pins are made of quartz.

5. The processing suite of claim 1, further comprising: An annular sleeve is positioned radially outside the support ring and below the edge ring.

6. The processing kit of claim 5, wherein a gap is formed between the support ring and the annular sleeve.

7. A processing kit for processing a substrate, the processing kit comprising: A support ring has a first portion and a second portion, the first portion having a first thickness and the second portion having a second thickness less than the first thickness, the first portion and the second portion forming a stepped surface of the support ring; An edge ring is configured to contact the stepped surface of the support ring, with the bottom surface of the edge ring positioned above at least one of the first portion and the second portion; An annular sleeve is disposed radially outside the support ring and below the edge ring, the annular sleeve contacting the bottom surface of the edge ring; as well as A cover ring, externally connected to at least the edge ring, the edge ring being independently movable relative to the support ring and the cover ring.

8. The processing kit of claim 7, wherein the cover ring is made of quartz.

9. The processing suite of claim 7, further comprising: An actuation mechanism configured to actuate the edge ring such that the distance between the bottom surface of the edge ring and the second portion of the support ring changes.

10. The processing kit of claim 9, wherein the actuation mechanism comprises: The push pin is located radially inside the inner diameter of the cover ring.

11. The processing kit of claim 10, wherein the push pin is made of quartz.

12. The processing kit of claim 7, wherein a gap is formed between the support ring and the annular sleeve.

13. The processing kit of claim 7, wherein when the edge ring is in its lowest position, the support ring and the edge ring share a coplanar upper surface.

14. The processing kit of claim 7, wherein when the edge ring is in its lowest position, the bottom surface of the edge ring is positioned above the bottom surfaces of both the first and second portions of the support ring.

15. An apparatus for processing a substrate, the apparatus comprising: An electrostatic chuck has a first portion and a second portion, the first portion being configured to support the substrate; A processing kit, configured to engage with the second portion of the electrostatic chuck, the processing kit comprising: A support ring, the support ring including an upper surface having a radially inner edge disposed at a first height and a radially outer edge disposed at a second height less than the first height, the radially inner edge having a thickness greater than the radially outer edge; An edge ring is disposed on the support ring, the inner surface of the edge ring being in contact with the radial inner edge of the support ring; A cover ring, disposed radially outside the edge ring, the edge ring being independently movable relative to the support ring and the cover ring; and One or more push pins are disposed radially inside the inner diameter of the cover ring, the one or more push pins being operable to raise the edge ring, the one or more push pins being located within an opening in the support ring, wherein the radial clearance of each of the one or more push pins within the opening is configured such that radial movement of the support ring is constrained by the one or more push pins.

16. The apparatus of claim 15, further comprising: An annular sleeve is disposed below the edge ring and externally connected to at least the support ring, wherein a gap is formed between the support ring and the annular sleeve.

17. The apparatus of claim 15, wherein one or more push pins are in contact with the bottom surface of the edge ring, and the one or more push pins are configured to actuate the edge ring such that the distance between the bottom surface of the edge ring and the radial outer edge of the support ring changes.

18. The apparatus of claim 15, wherein when the edge ring is in its lowest position, the support ring and the edge ring share a coplanar upper surface.

19. The apparatus of claim 15, wherein when the edge ring is in its lowest position, the bottom surface of the edge ring is positioned above the bottom surfaces of both the radial inner edge and the radial outer edge of the support ring.

Images