Display panel and manufacturing method thereof

Abstract

The application provides a display panel and a manufacturing method thereof. The display panel comprises a first dielectric filter film and / or a second dielectric filter film. The first dielectric filter film is arranged on a side of a quantum dot color conversion layer away from a substrate and covers at least part of the quantum dot color conversion layer and at least part of a filling layer. The second dielectric filter film is arranged between a color film and the quantum dot color conversion layer. The second dielectric filter film has a via hole. A normal projection of the via hole on the substrate is larger than a normal projection of a blue color film on the substrate. The filling layer fills the via hole. The first dielectric filter film is adapted to transmit blue light and reflect red light and green light. The second dielectric filter film is adapted to transmit red light and green light and reflect blue light. Thus, the color conversion efficiency of red quantum dot color conversion layers and green quantum dot color conversion layers of the display panel is high, the light output efficiency of red light and green light is high, and the power consumption of the display panel can be further reduced.

Description

Technical Field

[0001] This application relates to the field of display panel technology, and more specifically, to display panels and methods of manufacturing the same. Background Technology

[0002] In related LED products, the blue light emitted by the LED excites the red quantum dot material to emit red light, and the blue light emitted by the LED excites the green quantum dot material to emit green light. The light emission efficiency of red and green light in current LED products still needs to be further improved. Summary of the Invention

[0003] The present invention aims to at least partially solve one of the technical problems in the related art.

[0004] In one aspect of the present invention, a display panel is provided, comprising: a substrate; a black matrix disposed on the surface of the substrate and having a plurality of first openings; a color filter disposed on the surface of the substrate, the color filter including a red color filter, a green color filter, and a blue color filter, the red color filter, the green color filter, and the blue color filter being located in the first openings; a pixel defining layer disposed on the side of the black matrix opposite to the substrate and defining a plurality of second openings, the second openings corresponding one-to-one with the color filters; a quantum dot color conversion layer located in the second openings, the quantum dot color conversion layer including a red quantum dot color conversion layer and a green quantum dot color conversion layer, the red quantum dot color conversion layer being disposed directly opposite the red color filter, and the green quantum dot color conversion layer being disposed directly opposite the green color filter; and a filling layer disposed on the back of the blue color filter. A filling layer is disposed opposite to the blue color filter on one side of the substrate and located in the second opening. Multiple blue light-emitting devices are disposed on the side of the quantum dot color conversion layer and the filling layer away from the substrate. A first dielectric filter and / or a second dielectric filter are provided. The first dielectric filter is disposed on the side of the quantum dot color conversion layer away from the substrate and covers at least a portion of the quantum dot color conversion layer and at least a portion of the filling layer. The second dielectric filter is disposed between the color filter and the quantum dot color conversion layer. The second dielectric filter has a via, the orthographic projection of which on the substrate is larger than the orthographic projection of the blue color filter on the substrate, and the filling layer fills the via. The first dielectric filter is adapted to transmit blue light and reflect red and green light, while the second dielectric filter is adapted to transmit red and green light and reflect blue light. Therefore, the display panel has high color conversion efficiency in its red and green quantum dot color conversion layers and high light emission efficiency in its red and green light, further reducing the power consumption of the display panel.

[0005] According to some embodiments of the present invention, the orthographic projection of the first dielectric filter film onto the substrate coincides with the substrate. This further improves the light extraction efficiency of red and green light.

[0006] According to some embodiments of the present invention, the display panel further includes an encapsulation layer disposed on the surface of the quantum dot conversion layer and the filling layer facing away from the substrate. This improves the lifespan of the display panel.

[0007] According to some embodiments of the present invention, the display panel further includes a protective layer disposed between the second dielectric filter film and the black matrix, wherein the orthographic projection of the protective layer on the substrate is located on both sides of the blue color filter film and inside the orthographic projection of the black matrix connected to the blue color filter film on the substrate. This prevents damage to the blue color filter film during the formation of the second dielectric filter film.

[0008] According to some embodiments of the present invention, the protective layer satisfies at least one of the following conditions: the material forming the protective layer includes at least one of Mo, Al, Ti and ITO; the thickness of the protective layer is 50 nm to 300 nm.

[0009] According to some embodiments of the present invention, the thicknesses of the first dielectric filter film and the second dielectric filter film are independently 500 nm to 2000 nm.

[0010] In another aspect of the present invention, a method for manufacturing the aforementioned display panel is provided, comprising: providing a substrate; forming a black matrix on the surface of the substrate, the black matrix having a plurality of first openings; forming color filters in the first openings, the color filters including a red color filter, a green color filter, and a blue color filter; forming a pixel defining layer on a side of the black matrix opposite to the substrate, the pixel defining layer defining a plurality of second openings, the second openings corresponding one-to-one with the color filters; forming a quantum dot color conversion layer in the second openings, the quantum dot color conversion layer including a red quantum dot color conversion layer and a green quantum dot color conversion layer, the red quantum dot color conversion layer being disposed directly opposite to the red color filter, and the green quantum dot color conversion layer being disposed directly opposite to the green color filter; forming a filling layer in the second opening on the side of the blue color filter opposite to the substrate, the filling layer... The method includes a display panel disposed directly opposite to the blue color filter; a blue light-emitting device is formed on the side of the quantum dot color conversion layer and the filling layer facing away from the substrate; the method further includes the steps of forming a first dielectric filter film and / or a second dielectric filter film, wherein the first dielectric filter film is formed on the side of the quantum dot color conversion layer facing away from the substrate and covers at least a portion of the quantum dot conversion layer and at least a portion of the filling layer, the second dielectric filter film is formed between the color filter film and the quantum dot color conversion layer, the second dielectric filter film has a via, the orthographic projection of the via on the substrate is larger than the orthographic projection of the blue color filter film on the substrate, and the filling layer fills the via; wherein the first dielectric filter film is adapted to transmit blue light and reflect red and green light, and the second dielectric filter film is adapted to transmit the red and green light and reflect the blue light. Therefore, the display panel manufactured by this method has all the features and advantages of the aforementioned display panel, which will not be repeated here. In general, it has at least the advantages of simple manufacturing process and low power consumption of the display panel.

[0011] According to some embodiments of the present invention, the step of forming an encapsulation layer is further included, the encapsulation layer being formed on the surface of the quantum dot color conversion layer and the filling layer facing away from the substrate.

[0012] According to some embodiments of the present invention, a method for forming the second dielectric filter film includes: forming a sacrificial layer on the side of the blue color filter facing away from the substrate, the sacrificial layer covering at least a portion of the surface of the blue color filter and the black matrix on both sides of the blue color filter and connected to the blue color filter; forming a full-layer filter film layer on the side of the color filter facing away from the substrate, the orthographic projection of the full-layer filter film layer on the substrate coinciding with the substrate; performing a first patterning on the full-layer filter film layer to obtain the second dielectric filter film; and performing a second patterning on the sacrificial layer to obtain a protective layer, the orthographic projection of the protective layer on the substrate being located inside the orthographic projection of the black matrix on both sides of the blue color filter and connected to the blue color filter on the substrate.

[0013] According to some embodiments of the present invention, the first patterning method is dry etching, and the second patterning method is wet etching. Attached Figure Description

[0014] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0015] Figure 1 This shows a schematic diagram of the structure of a display panel according to an embodiment of the present invention;

[0016] Figure 2 A schematic diagram of the structure of a display panel according to another embodiment of the present invention is shown;

[0017] Figure 3 A schematic diagram of the structure of a display panel according to another embodiment of the present invention is shown;

[0018] Figure 4 This shows a schematic diagram of the structure of a display panel according to an embodiment of the related art;

[0019] Figure 5 This shows a schematic diagram of the structure of a display panel according to another embodiment of the related art;

[0020] Figure 6 A schematic diagram of the structure of a display panel according to another embodiment of the present invention is shown;

[0021] Figure 7 A flowchart illustrating the fabrication of a display panel according to an embodiment of the present invention is shown;

[0022] Figure 8 A schematic diagram of the structure of a display panel according to another embodiment of the present invention is shown;

[0023] Figure 9 A flowchart illustrating the fabrication of a display panel according to another embodiment of the present invention is shown;

[0024] Figure 10 This invention illustrates a flowchart of the fabrication of a second dielectric filter film according to an embodiment of the present invention;

[0025] Figure 11 This diagram illustrates the process of fabricating a second dielectric filter film according to an embodiment of the present invention.

[0026] Figure 12 This diagram illustrates the process of fabricating a second dielectric filter film according to an embodiment of the present invention.

[0027] Figure 13 This diagram illustrates the process of fabricating a second dielectric filter film according to an embodiment of the present invention.

[0028] Figure 14 This diagram illustrates the process of fabricating a second dielectric filter film according to an embodiment of the present invention.

[0029] Figure 15 This diagram illustrates the process of fabricating a second dielectric filter film according to an embodiment of the present invention.

[0030] Figure 16 This diagram illustrates the process of fabricating a second dielectric filter film according to an embodiment of the present invention.

[0031] Figure 17 A flowchart illustrating the fabrication of a display panel according to another embodiment of the present invention is shown;

[0032] Figure 18 A schematic diagram illustrating the process of manufacturing a display panel according to another embodiment of the present invention is shown.

[0033] Figure label:

[0034] 10: Display panel; 101: Substrate; 102: Black matrix; 1031: Red color film; 1032: Green color film; 1033: Blue color film; 104: Pixel defining layer; 1051: Red quantum dot color conversion layer; 1052: Green quantum dot color conversion layer; 106: Filling layer; 107: Blue light emitting device; 108: First dielectric filter film; 109: Second dielectric filter film; 110: Encapsulation layer; 111: Protective layer; 1110: Sacrificial layer; 1090: Filter film layer; 112: Bonding layer; 113: GaN layer; 114: Distributed Bragg mirror; 115: Photoresist. Detailed Implementation

[0035] The embodiments of the present invention are described in detail below. These embodiments are exemplary and are only used to explain the present invention, and should not be construed as limiting the invention. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in the art or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all commercially available conventional products.

[0036] In one aspect of the invention, a display panel 10 is provided, with reference to... Figures 1-3 The display panel 10 includes: a substrate 101; a black matrix 102 disposed on the surface of the substrate 101 and having a plurality of first openings; a color filter disposed on the surface of the substrate 101, the color filter including a red color filter 1031, a green color filter 1032 and a blue color filter 1033, the red color filter 1031, the green color filter 1032 and the blue color filter 1033 being respectively located in the first openings; and a pixel defining layer 104 disposed on the black matrix 101. 2. A side facing away from the substrate 101 defines a plurality of second openings, each corresponding to a color filter; a quantum dot color conversion layer is located in the second opening, the quantum dot color conversion layer includes a red quantum dot color conversion layer 1051 and a green quantum dot color conversion layer 1052, the red quantum dot color conversion layer 1051 is disposed directly opposite to the red color filter 1031, and the green quantum dot color conversion layer 1052 is disposed directly opposite to the green color filter 1032; a filling layer 106 is provided. A blue color filter 1033 is disposed on the side opposite to the substrate 101 and located in the second opening; a filling layer 106 is disposed directly opposite to the blue color filter 1033; multiple blue light-emitting devices 107 are disposed on the side opposite to the substrate 101 of the quantum dot color conversion layer and the filling layer 106; a first dielectric filter 108 and / or a second dielectric filter 109 are disposed on the side opposite to the substrate 101 of the quantum dot color conversion layer and cover the quantum dot conversion layer. At least a portion of the layer and at least a portion of the filling layer 106 are included. A second dielectric filter 109 is disposed between the color filter and the quantum dot color conversion layer. The second dielectric filter 109 has vias, and the orthographic projection of the vias on the substrate 101 is larger than the orthographic projection of the blue color filter 1033 on the substrate 101. The filling layer 106 fills the vias. The first dielectric filter 108 is adapted to transmit blue light and reflect red and green light, while the second dielectric filter 109 is adapted to transmit red and green light and reflect blue light. As a result, the display panel 10 has high color conversion efficiency of the red quantum dot color conversion layer 1051 and the green quantum dot color conversion layer 1052, and high light extraction efficiency of red and green light, which can further reduce the power consumption of the display panel 10.

[0037] The principles by which this application achieves the aforementioned beneficial effects are explained in detail below:

[0038] The display panel 10 in the related technology, see reference. Figure 4 When blue light emitted by the blue light-emitting device 107 illuminates the red quantum dot color conversion layer 1051 and the green quantum dot color conversion layer 1052, some of the blue light is reflected back towards the blue light-emitting device 107, affecting the light emission effect of the display panel 10. The display panel 10 involved in this application refers to... Figure 1 When the display panel 10 includes only the first dielectric filter film 108, the first dielectric filter film 108 covers at least a portion of the quantum dot conversion layer and at least a portion of the filling layer 106. Further, the first dielectric filter film 108 covers the filling layer 106, the green quantum dot color conversion layer 1052, and the red quantum dot color conversion layer 1051. In this case, the first dielectric filter film 108 can reflect the green light emitted by the green quantum dot color conversion layer 1052 towards the blue light-emitting device 107 and the red light emitted by the red quantum dot color conversion layer 1051 towards the blue light-emitting device 107, thereby increasing the light intensity of the green and red light emitted. (Reference) Figure 2 When the display panel 10 includes only the second dielectric filter film 109, the second dielectric filter film 109 covers at least a portion of the red color film 1031 and the green color film 1032, while not covering the blue color film 1033. Therefore, the second dielectric filter film 109 can reflect blue light irradiated onto the green color film 1032 and the red color film 1031 back to the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, further enhancing the color conversion efficiency of the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, and preventing blue light at the blue color film 1033 from being emitted to the filling layer 106. This improves the light output intensity of red and green light without affecting the light output intensity of blue light. (Reference) Figure 3When the display panel 10 includes both a first dielectric filter film 108 and a second dielectric filter film 109, the specific structures of the first dielectric filter film 108 and the second dielectric filter film 109 refer to the aforementioned design. In this case, the first dielectric filter film 108 can reflect the green light emitted by the green quantum dot color conversion layer 1052 towards the blue light emitting device 107 and the red light emitted by the red quantum dot color conversion layer 1051 towards the blue light emitting device 107, thereby enhancing the green and red light... To improve the light emission intensity, the second dielectric filter film 109 reflects the blue light irradiated by the green color film 1032 and the red color film 1031 back to the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, further enhancing the color conversion efficiency of the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, and preventing the blue light at the blue color film 1033 from being emitted to the filling layer 106. This improves the light emission intensity of red and green light without affecting the light emission intensity of blue light. The display panel 10 also includes a first dielectric filter film 108 and a second dielectric filter film 109, which can further improve the color conversion efficiency of the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, and improve the light emission intensity of red and green light.

[0039] Specifically, the materials used to form the first dielectric filter film 108 and the second dielectric filter film 109 are not particularly limited. For example, the first dielectric filter film 108 and the second dielectric filter film 109 can be formed by stacking two or more films with low and high refractive indices. For example, the material forming the high refractive index film may include at least one of SiN, TiO2, Ti2O5, Nb2O5, ZrO2, Y2O3, and ZnS, and the material forming the low refractive index film may include at least one of SiO2 and MgF2.

[0040] According to some embodiments of the present invention, reference Figure 1 and Figure 3 The orthographic projection of the first dielectric filter film 108 onto the substrate 101 coincides with the substrate 101. That is, the entire first dielectric filter film 108 can be formed on the side of the quantum dot color conversion layer and the filling layer 106 that faces away from the substrate 101. This further improves the flatness of the film structure, increases the transmittance of blue light, and simultaneously reflects the green and red light irradiated towards the blue light-emitting device 107 back, further increasing the intensity of the emitted red and green light.

[0041] According to some embodiments of the present invention, reference Figures 1-3The display panel 10 may further include an encapsulation layer 110, which is disposed on the surface of the quantum dot conversion layer and the filling layer 106 facing away from the substrate 101. Specifically, the encapsulation layer 110 may be formed in the second opening, that is, the encapsulation layer 110 corresponds to the filling layer 106, the green quantum dot color conversion layer 1052, and the red quantum dot color conversion layer 1051; or, a full-layer encapsulation layer 110 may be formed on the side of the quantum dot color conversion layer and the filling layer 106 facing away from the substrate 101, and the encapsulation layer 110 simultaneously covers the filling layer 106, the pixel defining layer 104, and the quantum dot color conversion layer.

[0042] When the display panel 10 contains a second dielectric filter film 109, since the second dielectric filter film 109 needs to avoid the blue color filter 1033, when the second dielectric filter film 109 is formed by dry etching, it may cause a certain degree of etching damage to the blue color filter 1033 (see reference). Figure 5 According to some embodiments of the present invention, reference is made to... Figure 6 The display panel 10 may further include: a protective layer 111, which is disposed between the second medium filter film 109 and the black matrix 102. The orthographic projection of the protective layer 111 on the substrate 101 is located on both sides of the blue color film 1033 and inside the orthographic projection of the black matrix 102 connected to the blue color film 1033 on the substrate 101.

[0043] According to some specific embodiments of the present invention, the protective layer 111 satisfies at least one of the following conditions: the material forming the protective layer 111 includes at least one of Mo, Al, Ti, and ITO; the thickness of the protective layer 111 is 50 nm to 300 nm, for example, it can be 70 nm, 100 nm, 130 nm, 160 nm, 190 nm, 220 nm, 250 nm, or 270 nm, etc. Preferably, the thickness of the protective layer 111 can be 70 nm to 130 nm.

[0044] According to some embodiments of the present invention, the thicknesses of the first dielectric filter film 108 and the second dielectric filter film 109 are independently 500 nm to 2000 nm. That is, the thickness of the first dielectric filter film 108 can be the same or different. The thicknesses of the first dielectric filter film 108 and the second dielectric filter film 109 are independently 700 nm, 900 nm, 1100 nm, 1300 nm, 1500 nm, 1700 nm, or 1900 nm, etc.

[0045] According to some specific embodiments of the present invention, the ratio of the thickness of the first dielectric filter film 108 to the thickness of the protective layer 111 is not less than 1, and the ratio of the thickness of the second dielectric filter film 109 to the thickness of the protective layer 111 is not less than 1.

[0046] In another aspect of the present invention, a method for manufacturing the aforementioned display panel 10 is provided, which will be described in detail below with reference to specific embodiments:

[0047] According to some embodiments of the present invention, when the display panel 10 includes only the first dielectric filter film 108, reference Figure 7 The method for manufacturing the display panel 10 includes:

[0048] S110: Provides substrate

[0049] In this step, the material used to form the substrate 101 is not particularly limited. For example, the substrate 101 can be a rigid substrate 101 or a flexible substrate 101. Specifically, the substrate 101 can be a PCB board, a glass substrate 101, a sapphire substrate 101, or a polyimide film substrate 101.

[0050] S120: Forming a black matrix

[0051] In this step, a black matrix 102 is formed on the surface of the substrate 101. The black matrix 102 has multiple first openings. The specific structure of the black matrix 102 can be found in [reference needed]. Figure 1 Specifically, the method for forming the black matrix 102 is not particularly limited, and those skilled in the art can refer to the methods for fabricating the black matrix 102 in related technologies.

[0052] S130: Forming a color filter

[0053] In this step, a color filter is formed in the first opening. The color filter includes a red color filter 1031, a green color filter 1032, and a blue color filter 1033. The specific structure of the color filter can be found in [reference needed]. Figure 1 The method for forming the color filter is not particularly limited; refer to the color filter manufacturing methods in related technologies.

[0054] S140: Forming a pixel boundary layer

[0055] In this step, a pixel defining layer 104 is formed on the side of the black matrix 102 layer facing away from the substrate 101. The pixel defining layer 104 defines a plurality of second openings, each of which corresponds to a color filter. Specifically, the structure of the pixel defining layer 104 can be found in [reference needed]. Figure 1 .

[0056] S150: Forming a quantum dot color conversion layer

[0057] In this step, a quantum dot color conversion layer is formed in the second opening. The quantum dot color conversion layer includes a red quantum dot color conversion layer 1051 and a green quantum dot color conversion layer 1052. The red quantum dot color conversion layer 1051 is positioned corresponding to the red color film 1031, and the green quantum dot color conversion layer 1052 is positioned corresponding to the green color film 1032. For details, the specific structure of the quantum dot color conversion layer can be found in [reference needed]. Figure 1 .

[0058] S160: Forming a filler layer

[0059] In this step, a filling layer 106 is formed in the second opening on the side of the blue color filter 1033 facing away from the substrate 101, and the filling layer 106 is disposed directly opposite to the blue color filter 1033. Specifically, the specific structure of the filling layer 106 can be found in [reference needed]. Figure 1 .

[0060] S170: Forming the first dielectric filter film

[0061] In this step, a first dielectric filter film 108 is formed on the side of the quantum dot color conversion layer facing away from the substrate 101. The first dielectric filter film 108 covers at least a portion of the quantum dot conversion layer and at least a portion of the filling layer 106. According to some specific embodiments of the present invention, the orthographic projection of the first dielectric filter film 108 on the substrate 101 coincides with the substrate 101. That is, a full layer of the first dielectric filter film 108 can be formed on the side of the quantum dot color conversion layer facing away from the substrate 101. This further improves the flatness of the film structure and the transmittance of blue light. At the same time, it reflects the green and red light irradiated towards the blue light emitting device 107 back, further improving the light extraction efficiency of red and green light. Specifically, the structure of the first dielectric filter film 108 can be referred to Figure 1 .

[0062] S180: Forming a blue light-emitting device

[0063] In this step, a blue light-emitting device 107 is formed on the side of the first dielectric filter film 108 facing away from the substrate 101. Specifically, the type of blue light-emitting device 107 is not particularly limited; for example, it can be a blue LED. According to some embodiments of the present invention, a distributed Bragg reflector 114 (DBR reflector) may also be provided on the side of the blue LED facing the substrate 101. According to other embodiments of the present invention, see... Figure 8 Before forming the blue light emitting device 107 on the side of the first dielectric filter film 108 away from the substrate 101, a bond and layer 112 may be formed on the side of the first dielectric filter film 108 away from the substrate 101. Furthermore, a GaN layer 113 may be formed on the side of the bond and layer 112 away from the substrate 101.

[0064] Therefore, the first dielectric filter film 108 in the display panel 10 made by this method can reflect the green light emitted by the green quantum dot color conversion layer 1052 toward the blue light emitting device 107 and the red light emitted by the red quantum dot color conversion layer 1051 toward the blue light emitting device 107, thereby increasing the light intensity of green and red light.

[0065] According to some embodiments of the present invention, when the display panel 10 includes only the second dielectric filter film 109, reference Figure 9 The method for manufacturing the display panel 10 includes:

[0066] S210: Providing a substrate

[0067] In this step, the material used to form the substrate 101 is not particularly limited. For example, the substrate 101 can be a rigid substrate 101 or a flexible substrate 101. Specifically, the substrate 101 can be a PCB board, a glass substrate 101, a sapphire substrate 101, or a polyimide film substrate 101.

[0068] S220: Forming a black matrix

[0069] In this step, a black matrix 102 is formed on the surface of the substrate 101, and the black matrix 102 has a plurality of first openings. Specifically, the method for forming the black matrix 102 is not particularly limited, and those skilled in the art can refer to the fabrication methods of the black matrix 102 in related technologies. Specifically, the specific structure of the black matrix 102 can be found in... Figure 2 .

[0070] S230: Forming a color filter

[0071] In this step, a color filter is formed in the first opening. The color filter includes a red color filter 1031, a green color filter 1032, and a blue color filter 1033. The method of forming the color filter is not particularly limited, and reference can be made to color filter manufacturing methods in related technologies. Specifically, the structure of the color filter can be found in... Figure 2 .

[0072] S240: Forming a second dielectric filter film

[0073] In this step, a second dielectric filter film 109 is formed on the side of the color filter facing away from the substrate 101. The second dielectric filter film 109 is adapted to transmit red and green light and reflect blue light. The second dielectric filter film 109 has a via, and the orthographic projection of the via on the substrate 101 is larger than the orthographic projection of the blue color filter 1033 on the substrate 101. Specifically, the structure of the second dielectric filter film 109 can be referred to Figure 2 .

[0074] According to some embodiments of the present invention, reference Figure 10 The method for forming the second dielectric filter film 109 further includes:

[0075] S241: Formation of a sacrificial layer

[0076] In this step, refer to Figure 11 A sacrificial layer 1110 is formed on the side of the blue color filter 1033 facing away from the substrate 101. The sacrificial layer 1110 covers at least a portion of the surface of the blue color filter 1033 and the black matrix 102 on both sides of the blue color filter 1033 and connected to the blue color filter 1033. According to some specific embodiments of the present invention, the material forming the sacrificial layer 1110 is not particularly limited; for example, the material forming the protective layer 111 may include at least one of Mo, Al, Ti, and ITO. According to other specific embodiments of the present invention, the thickness of the protective layer 111 may be 50 nm to 300 nm, for example, 70 nm, 100 nm, 130 nm, 160 nm, 190 nm, 220 nm, 250 nm, or 270 nm. Preferably, the thickness of the protective layer 111 may be 70 nm to 130 nm.

[0077] S242: Forming a complete filter film layer

[0078] In this step, refer to Figure 12 A full-layer filter film 1090 is formed on the side of the color filter facing away from the substrate 101, and the orthographic projection of the full-layer filter film 1090 on the substrate 101 coincides with the substrate 101.

[0079] S243: Forming a second dielectric filter film

[0080] In this step, the entire filter film layer 1090 is first patterned to obtain the second dielectric filter film 109. According to some specific embodiments of the present invention, the first patterning method can be dry etching. Specifically, refer to... Figure 13 and Figure 14 A full layer of photoresist 115 can be formed on the side of the entire filter film facing away from the substrate 101. Through exposure, development, and photoresist removal, a second dielectric filter film 109 is formed. Since the sacrificial layer 1110 covers the blue color filter 1033, it protects the blue color filter 1033 during dry etching, preventing damage. Simultaneously, since the sacrificial layer 1110 does not cover the green color filter 1032 and the red color filter 1031, it avoids affecting the light-emitting area of ​​the green and red color filters 1032 and thus the light intensity of red and green light. According to some specific embodiments of the present invention, the thickness of the second dielectric filter film 109 can be 500nm to 2000nm, for example, 700nm, 900nm, 1100nm, 1300nm, 1500nm, 1700nm, or 1900nm.

[0081] S244: Forming a protective layer

[0082] In this step, refer to Figure 15 and Figure 16 The sacrificial layer 1110 is then patterned a second time to obtain a protective layer 111. The orthographic projection of the protective layer 111 onto the substrate 101 lies within the orthographic projection of the black matrix 102, which is connected to and on both sides of the blue color filter 1033, onto the substrate 101. Therefore, the protective layer 111 does not cover the blue color filter 1033, thus avoiding affecting the light-emitting area of ​​the blue color filter 1033 and the intensity of blue light emission. According to some specific embodiments of the present invention, the protective layer 111 can be formed by wet etching.

[0083] S250: Forming a pixel boundary layer

[0084] In this step, a pixel defining layer 104 is formed on the side of the black matrix 102 layer facing away from the substrate 101. The pixel defining layer 104 defines a plurality of second openings, each corresponding to a color filter. Specifically, the structure of the pixel defining layer can be referred to... Figure 2 .

[0085] S260: Formation of quantum dot color conversion layer

[0086] In this step, a quantum dot color conversion layer is formed in the second opening. The quantum dot color conversion layer includes a red quantum dot color conversion layer 1051 and a green quantum dot color conversion layer 1052. The red quantum dot color conversion layer 1051 is positioned corresponding to the red color film 1031, and the green quantum dot color conversion layer 1052 is positioned corresponding to the green color film 1032. Specifically, the structure for forming the quantum dot color conversion layer can be found in [reference needed]. Figure 2 .

[0087] S270: Forming a filler layer

[0088] In this step, a filling layer 106 is formed in the second opening on the side of the blue color filter 1033 facing away from the substrate 101, and the filling layer 106 is disposed directly opposite to the blue color filter 1033. Specifically, the structure of the filling layer 106 can be referred to Figure 2 .

[0089] S280: Forming a blue light-emitting device

[0090] In this step, a blue light-emitting device 107 is formed on the side of the quantum dot color conversion layer and filling layer 106 facing away from the substrate 101. Specifically, the type of blue light-emitting device 107 is not particularly limited; for example, it can be a blue LED. According to some embodiments of the present invention, a distributed Bragg reflector 114 (DBR reflector) may also be provided on the side of the blue LED facing the substrate 101. According to other embodiments of the present invention, see... Figure 8Before forming the blue light emitting device 107 on the side of the first dielectric filter film 108 away from the substrate 101, a bond and layer 112 may be formed on the side of the first dielectric filter film 108 away from the substrate 101. Furthermore, a GaN layer 113 may be formed on the side of the bond and layer 112 away from the substrate 101.

[0091] Therefore, the second dielectric filter film 109 can reflect the blue light irradiated on the red color film 1031 and the green color film 1032 to the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, further stimulating the color conversion efficiency of the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, and preventing the blue light at the blue color film 1033 from being emitted to the filling layer 106, thereby improving the output intensity of red and green light without affecting the output intensity of blue light.

[0092] According to some embodiments of the present invention, when the display panel 10 may simultaneously include a first dielectric filter film 108 and a second dielectric filter film 109, reference... Figure 17 The method for manufacturing the display panel 10 includes:

[0093] S310: Provides substrate

[0094] In this step, the material used to form the substrate 101 is not particularly limited. For example, the substrate 101 can be a rigid substrate 101 or a flexible substrate 101. Specifically, the substrate 101 can be a PCB board, a glass substrate 101, a sapphire substrate 101, or a polyimide film substrate 101.

[0095] S320: Forming a black matrix

[0096] In this step, a black matrix 102 is formed on the surface of the substrate 101, the black matrix 102 having a plurality of first openings. Specifically, the method for forming the black matrix 102 is not particularly limited, and those skilled in the art can refer to the methods for fabricating the black matrix 102 in related art.

[0097] S330: Forms a color filter

[0098] In this step, a color filter is formed in the first opening. The color filter includes a red color filter 1031, a green color filter 1032, and a blue color filter 1033. The method of forming the color filter is not particularly limited, and reference can be made to color filter manufacturing methods in related technologies.

[0099] S340: Forming a second dielectric filter film

[0100] In this step, a second dielectric filter film 109 is formed on the side of the color filter facing away from the substrate 101. The second dielectric filter film 109 is adapted to transmit red and green light and reflect blue light. The second dielectric filter film 109 has vias, and the orthographic projection of the vias on the substrate 101 is larger than the orthographic projection of the blue color filter 1033 on the substrate 101. According to some specific embodiments of the present invention, the thickness of the second dielectric filter film 109 can be 500nm to 2000nm, for example, it can be 700nm, 900nm, 1100nm, 1300nm, 1500nm, 1700nm or 1900nm, etc.

[0101] According to some embodiments of the present invention, reference Figure 10 The method for forming the second dielectric filter film 109 further includes:

[0102] S341: Formation of a sacrificial layer

[0103] In this step, a sacrificial layer 1110 is formed on the side of the blue color filter 1033 facing away from the substrate 101. The sacrificial layer 1110 covers at least a portion of the surface of the blue color filter 1033 and the black matrix 102 on both sides of the blue color filter 1033 and connected to the blue color filter 1033. According to some specific embodiments of the present invention, the material forming the sacrificial layer 1110 is not particularly limited; for example, the material forming the protective layer 111 may include at least one of Mo, Al, Ti, and ITO. According to other specific embodiments of the present invention, the thickness of the protective layer 111 may be 50 nm to 300 nm, for example, 70 nm, 100 nm, 130 nm, 160 nm, 190 nm, 220 nm, 250 nm, or 270 nm. Preferably, the thickness of the protective layer 111 may be 70 nm to 130 nm.

[0104] S342: Forming a complete filter film layer

[0105] In this step, a full-layer filter film 1090 is formed on the side of the color filter facing away from the substrate 101, and the orthographic projection of the full-layer filter film 1090 on the substrate 101 coincides with the substrate 101.

[0106] S343: Forming a second dielectric filter film

[0107] In this step, the entire filter film layer 1090 is first patterned to obtain the second dielectric filter film 109. According to some specific embodiments of the present invention, the first patterning method can be dry etching. Specifically, an entire layer of photoresist 115 can be formed on the side of the entire filter film facing away from the substrate 101, and the second dielectric filter film 109 is formed by exposure, development and photoresist removal.

[0108] Since the sacrificial layer 1110 covers the blue color filter 1033, it protects the blue color filter 1033 during dry etching, preventing damage to it. Simultaneously, since the sacrificial layer 1110 does not cover the green color filter 1032 and the red color filter 1031, it avoids affecting the light-emitting area of ​​the green and red color filters 1032 and thus the light intensity of red and green light.

[0109] S344: Form a protective layer

[0110] In this step, the sacrificial layer 1110 is patterned a second time to obtain a protective layer 111. The orthographic projection of the protective layer 111 on the substrate 101 is located inside the orthographic projection of the black matrix 102 connected to the blue color filter 1033 on both sides of the blue color filter 1033. Thus, the protective layer 111 does not cover the blue color filter 1033, which avoids affecting the light-emitting area of ​​the blue color filter 1033 and thus avoids affecting the light-emitting intensity of blue light.

[0111] S350: Forming a pixel boundary layer

[0112] In this step, a pixel defining layer 104 is formed on the side of the black matrix 102 layer facing away from the substrate 101. The pixel defining layer 104 defines a plurality of second openings, each of which corresponds to a color filter.

[0113] S360: Forming a quantum dot color conversion layer

[0114] In this step, a quantum dot color conversion layer is formed in the second opening. The quantum dot color conversion layer includes a red quantum dot color conversion layer 1051 and a green quantum dot color conversion layer 1052. The red quantum dot color conversion layer 1051 is set to correspond with the red color film 1031, and the green quantum dot color conversion layer 1052 is set to correspond with the green color film 1032.

[0115] S370: Forming a filler layer

[0116] In this step, a filling layer 106 is formed in the second opening on the side of the blue color filter 1033 facing away from the substrate 101, and the filling layer 106 is disposed in direct correspondence with the blue color filter 1033.

[0117] S380: Forming the first dielectric filter film

[0118] In this step, a first dielectric filter film 108 is formed on the side of the quantum dot color conversion layer facing away from the substrate 101. The first dielectric filter film 108 covers at least a portion of the quantum dot color conversion layer and at least a portion of the filling layer 106. According to some specific embodiments of the present invention, the orthographic projection of the first dielectric filter film 108 on the substrate 101 coincides with the substrate 101. That is, a full layer of the first dielectric filter film 108 can be formed on the side of the quantum dot color conversion layer facing away from the substrate 101. This further improves the flatness of the film structure and the transmittance of blue light. At the same time, it reflects the green and red light irradiated towards the blue light emitting device 107 back, further improving the light extraction efficiency of red and green light. Specifically, a portion of the structure of the formed display panel 10 is referenced. Figure 18 .

[0119] S390: Forming a blue light-emitting device

[0120] In this step, a blue light-emitting device 107 (reference) is formed on the side of the first dielectric filter film 108 facing away from the substrate 101. Figure 3 Specifically, the type of blue light-emitting device 107 is not particularly limited; for example, it can be a blue LED. According to some embodiments of the present invention, a distributed Bragg reflector 114 (DBR reflector) may also be provided on the side of the blue LED facing the substrate 101. According to other embodiments of the present invention, see... Figure 8 Before forming the blue light emitting device 107 on the side of the first dielectric filter film 108 away from the substrate 101, a bond and layer 112 may be formed on the side of the first dielectric filter film 108 away from the substrate 101. Furthermore, a GaN layer 113 may be formed on the side of the bond and layer 112 away from the substrate 101.

[0121] Therefore, the first dielectric filter film 108 in the display panel 10 can reflect the green light transmitted from the green quantum dot color conversion layer 1052 toward the blue light emitting device 107 and the red light transmitted from the red quantum dot color conversion layer 1051 toward the blue light emitting device 107, thereby increasing the light output intensity of green and red light. The second dielectric filter film 109 can reflect the blue light irradiated by the red color film 1031 and the green color film 1032 back to the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, further stimulating the color conversion efficiency of the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, and preventing the blue light at the blue color film 1033 from being emitted to the filling layer 106, thus improving the light output intensity of red and green light without affecting the light output intensity of blue light. The display panel 10 includes a first dielectric filter film 108 and a second dielectric filter film 109, which can further improve the color conversion efficiency of the green quantum dot color conversion layer 1052 and the red quantum dot color conversion layer 1051, and increase the light output intensity of red and green light.

[0122] According to some embodiments of the present invention, when the display panel 10 includes only the first dielectric filter film 108, or the display panel 10 includes only the second dielectric filter film 109, or the display panel 10 includes both the first dielectric filter film 108 and the second dielectric filter film 109, the process of manufacturing the display panel 10 may also include the step of forming an encapsulation layer 110, which is formed on the surface of the quantum dot color conversion layer and the filler layer 106 away from the substrate 101.

[0123] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0124] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0125] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0126] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0127] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0128] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A display panel, characterized in that, include: substrate; A black matrix is ​​disposed on the surface of the substrate and has a plurality of first openings; A color filter is disposed on the surface of the substrate, and the color filter includes a red color filter, a green color filter, and a blue color filter, wherein the red color filter, the green color filter, and the blue color filter are located in the first opening; A pixel defining layer is disposed on the side of the black matrix facing away from the substrate and defines a plurality of second openings, each of which corresponds to a color filter. A quantum dot color conversion layer is located in the second opening. The quantum dot color conversion layer includes a red quantum dot color conversion layer and a green quantum dot color conversion layer. The red quantum dot color conversion layer is disposed in direct correspondence with the red color film, and the green quantum dot color conversion layer is disposed in direct correspondence with the green color film. A filling layer is disposed on the side of the blue color filter facing away from the substrate and located in the second opening, and the filling layer is disposed directly opposite to the blue color filter; A blue light-emitting device, wherein a plurality of the blue light-emitting devices are disposed on the side of the quantum dot color conversion layer and the filling layer opposite to the substrate; A first dielectric filter film and a second dielectric filter film, wherein the first dielectric filter film is disposed on the side of the quantum dot color conversion layer away from the substrate and covers at least a portion of the quantum dot conversion layer and at least a portion of the filling layer, and the first dielectric filter film is a whole layer. The second dielectric filter film is disposed between the color filter and the quantum dot color conversion layer. The second dielectric filter film has a via, the orthographic projection of which on the substrate is larger than the orthographic projection of the blue color filter on the substrate, and the filling layer fills the via. The first dielectric filter film is adapted to transmit blue light and reflect red and green light, while the second dielectric filter film is adapted to transmit the red and green light and reflect the blue light. Alternatively, the second dielectric filter film is disposed between the color filter and the quantum dot color conversion layer. The second dielectric filter film has a via, the orthographic projection of which on the substrate is larger than the orthographic projection of the blue color filter on the substrate, and the filling layer fills the via. The second dielectric filter film is adapted to transmit the red and green light and reflect the blue light. A protective layer is disposed between the second dielectric filter film and the black matrix, wherein the orthographic projection of the protective layer on the substrate surrounds the orthographic projection of the blue color filter on the substrate and is located within the range of the orthographic projection of the black matrix on the substrate; The material forming the protective layer includes at least one of Mo, Al, Ti, and ITO.

2. The display panel according to claim 1, characterized in that, The orthographic projection of the first dielectric filter film onto the substrate coincides with the substrate.

3. The display panel according to claim 1, characterized in that, Also includes: An encapsulation layer is disposed on the surface of the quantum dot conversion layer and the filling layer opposite to the substrate.

4. The display panel according to claim 1, characterized in that, The thickness of the protective layer is 50nm~300nm.

5. The display panel according to claim 1, characterized in that, The thicknesses of the first dielectric filter film and the second dielectric filter film are independently 500nm~2000nm.

6. A method for manufacturing a display panel according to any one of claims 1 to 5, characterized in that, include: Provide substrate; A black matrix is ​​formed on the surface of the substrate, the black matrix having a plurality of first openings; A color filter is formed in the first opening, the color filter including a red color filter, a green color filter and a blue color filter; A pixel defining layer is formed on the side of the black matrix facing away from the substrate, and the pixel defining layer defines a plurality of second openings, each of which corresponds to the color filter. A quantum dot color conversion layer is formed in the second opening. The quantum dot color conversion layer includes a red quantum dot color conversion layer and a green quantum dot color conversion layer. The red quantum dot color conversion layer is disposed in direct correspondence with the red color film, and the green quantum dot color conversion layer is disposed in direct correspondence with the green color film. A filling layer is formed in the second opening on the side of the blue color filter facing away from the substrate, and the filling layer is disposed directly opposite to the blue color filter; A blue light-emitting device is formed on the side of the quantum dot color conversion layer and the filling layer opposite to the substrate; It further includes the steps of forming a first dielectric filter film and / or a second dielectric filter film, wherein the first dielectric filter film is formed on the side of the quantum dot color conversion layer opposite to the substrate and covers at least a portion of the quantum dot color conversion layer and at least a portion of the filling layer, the second dielectric filter film is formed between the color filter and the quantum dot color conversion layer, the second dielectric filter film has a via, the orthographic projection of the via on the substrate is greater than the orthographic projection of the blue color filter on the substrate, and the filling layer fills the via; The first dielectric filter film is adapted to transmit blue light and reflect red and green light, and the second dielectric filter film is adapted to transmit the red and green light and reflect the blue light.

7. The method according to claim 6, characterized in that, It also includes the step of forming an encapsulation layer, which is formed on the surface of the quantum dot color conversion layer and the filling layer away from the substrate.

8. The method according to claim 6, characterized in that, The method for forming the second dielectric filter film includes: A sacrificial layer is formed on the side of the blue color filter facing away from the substrate. The sacrificial layer covers at least a portion of the surface of the blue color filter and the black matrix on both sides of the blue color filter and connected to the blue color filter. A full-length filter film layer is formed on the side of the color filter that is away from the substrate, and the orthographic projection of the full-length filter film layer on the substrate coincides with the substrate; The entire filter film layer is first patterned to obtain the second dielectric filter film; The sacrificial layer is patterned a second time to obtain a protective layer, wherein the orthographic projection of the protective layer on the substrate is located inside the orthographic projection of the black matrix connected to the blue color filter on both sides of the blue color filter.

9. The method according to claim 8, characterized in that, The first patterning method is dry etching, and the second patterning method is wet etching.

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