Automatic switching module, switch based on pre-charge circuit and sealed power supply system

Abstract

The application provides an automatic switching module, a pre-charge circuit-based switch and a stacked power supply system. The automatic switching module comprises electrically connected first and second switches. The first switch is used for receiving a first voltage, and the second switch is used for receiving a second voltage. The difference between the first voltage and the second voltage is greater than an opening voltage. When the second voltage is greater than the first voltage, the first switch is used as the drive of the second switch, so that the second switch is turned on, and the second voltage is used as the output voltage of the automatic switching module. When the first voltage is greater than the second voltage, the second switch is used as the drive of the first switch, so that the first switch is turned on, and the first voltage is used as the output voltage of the automatic switching module. The application can improve the power supply voltage supply efficiency, reduce the packaging area of the stacked power supply system and the power supply cost.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit technology, and in particular to an automatic switching module, a switch based on a pre-charge circuit, and a stacked power supply system. Background Technology

[0002] Currently, for the same chip, modules in different power domains need to operate at different voltages to meet diverse practical application requirements. When different power outputs are required, multiple different power supply units need to be designed, each typically corresponding to an LDO or DC-DC converter. Therefore, in order for different devices on the same chip to function properly, multiple different power supplies need to be designed, resulting in a complex chip structure and a relatively large package area.

[0003] Therefore, this invention proposes an automatic switching module, a switch based on a pre-charge circuit, and a stacked power supply system, which improves the power supply voltage efficiency while reducing the packaging area and power supply cost of the stacked power supply system. Summary of the Invention

[0004] This invention provides an automatic switching module, a switch based on a pre-charge circuit, and a stacked power supply system to solve the problems of low power supply efficiency and large package area caused by the power supply voltage of a single power source being limited by the load in the prior art.

[0005] In a first aspect, the present invention provides an automatic switching module, comprising: a first switch and a second switch electrically connected; the first switch is used to receive a first voltage, the second switch is used to receive a second voltage, and the difference between the first voltage and the second voltage is greater than an activation voltage; the first switch is used to drive the second switch to conduct when the second voltage is greater than the first voltage, and the second voltage serves as the output voltage of the automatic switching module; the second switch is used to drive the first switch to conduct when the first voltage is greater than the second voltage, and the first voltage serves as the output voltage of the automatic switching module.

[0006] Its beneficial effects are as follows: Compared with the prior art, the present invention does not require additional control of the first switch and the second switch, as well as corresponding devices for generating control signals. That is, only two input voltages are needed to realize the switching on and off, and the input voltage corresponding to the on switch is used as the output voltage. Moreover, without the need for additional control, the design of many related devices is reduced, thereby improving the power supply voltage efficiency while reducing the packaging area and power supply cost of the stacked power supply system.

[0007] Optionally, both the first switch and the second switch are field-effect transistors (FETs), and both are P-type FETs. The source of the first switch is connected to the gate of the second switch, and the source of the first switch is also used to receive the first voltage. The drain of the first switch is connected to the drain of the second switch, serving as the output terminal of the automatic switching module. The source of the second switch is connected to the gate of the first switch, and the source of the second switch is also used to receive the second voltage. The N-well of the first switch is also connected to the drain of the first switch, and the N-well of the second switch is also connected to the drain of the second switch. The advantages are that this invention only requires two FETs of the same conduction type to be electrically connected in the above manner to achieve automated switching control, making the design simple and convenient. Furthermore, the conventional technique in the prior art is to connect the N-well of the P-type field-effect transistor to its source. However, this method cannot guarantee that the N-well of the P-type field-effect transistor can always be connected to a high level, which affects the effectiveness of the present invention. Therefore, in order to ensure that the N-well of the P-type field-effect transistor can always be connected to a high level, the present invention connects the N-well of the P-type field-effect transistor to the drain. This ensures that the two P-type field-effect transistors do not experience increased substrate bias due to the body effect, which would lead to increased on-resistance and deterioration of output impedance.

[0008] Optionally, both the first switch and the second switch are field-effect transistors (FETs), and both are N-type FETs. The drain of the first switch is connected to the gate of the second switch, and the drain of the first switch is also used to receive the first voltage. The source of the first switch is connected to the source of the second switch, serving as the output terminal of the automatic switching module. The drain of the second switch is connected to the gate of the first switch, and the drain of the second switch is also used to receive the second voltage. The P-well of the first switch is also connected to the source of the first switch, and the P-well of the second switch is also connected to the source of the second switch. The advantages are that this invention only requires two FETs of the same conduction type to be electrically connected in the above manner to achieve automated switching control, making the design simple and convenient. Furthermore, the conventional technique in the prior art is to connect the P-well of the N-type field-effect transistor to its drain. However, this method cannot guarantee that the P-well of the N-type field-effect transistor can always be connected to a high level, which affects the effectiveness of the present invention. Therefore, in order to ensure that the P-well of the N-type field-effect transistor can always be connected to a high level, the present invention connects the P-well of the N-type field-effect transistor to its drain. This ensures that the two N-type field-effect transistors do not experience increased substrate bias due to the body effect, which would lead to increased on-resistance and deterioration of output impedance.

[0009] Secondly, the present invention provides a switch based on a pre-charging circuit, comprising: an automatic switching module as described in any one of the first aspects, a pre-charging circuit, a judgment unit, and an output unit; the pre-charging circuit includes a first buffer unit, a second buffer unit, and a mirror current source; the first buffer unit acquires a first voltage and charges the output unit under the action of the mirror current source, the second buffer unit acquires a second voltage and charges the output unit under the action of the mirror current source; the judgment unit acquires the output voltage and is used to control the output of the output unit by controlling the conduction state of the first buffer unit and the second buffer unit. Its beneficial effect is that the pre-charging circuit provided by the present invention can effectively prevent circuit breakdown caused by transient spike current at the moment the first switch or the second switch is turned on.

[0010] Optionally, the mirror current source includes: a bias current source with adjustable current magnitude, a first N-type field-effect transistor (FET), a second N-type FET, and a third N-type FET; the bias current source is electrically connected to the drain of the first N-type FET, the drain of the first N-type FET is also connected to the gate of the first N-type FET, the gate of the first N-type FET is also connected to the gate of the second N-type FET, and the gate of the third N-type FET; the source of the first N-type FET is grounded; the drain of the second N-type FET is connected to the second buffer unit, and the source of the second N-type FET is grounded; the drain of the third N-type FET is connected to the first buffer unit, and the source of the third N-type FET is grounded. Its beneficial effect is that the mirror current source provided by this invention can be adjusted according to the actual charging speed of the output unit to meet practical requirements.

[0011] Optionally, the first buffer unit includes: a first switch and a first P-type field-effect transistor; the second buffer unit includes: a second switch and a third P-type field-effect transistor; the source of the first P-type field-effect transistor is connected to the output unit and to acquire the first voltage, the gate of the first P-type field-effect transistor is connected to the first terminal of the first switch and the drain of the first P-type field-effect transistor; the drain of the first P-type field-effect transistor is also connected to the drain of the third N-type field-effect transistor; the second terminal of the first switch is also connected to the judgment unit, the judgment unit controls whether the first conducting unit can acquire the current provided by the mirror current source by controlling the conduction state of the first switch; the source of the third P-type field-effect transistor is connected to the output unit and to acquire the second voltage, the gate of the third P-type field-effect transistor is connected to the first terminal of the second switch and the drain of the third P-type field-effect transistor; the drain of the third P-type field-effect transistor is also connected to the drain of the second N-type field-effect transistor; the second terminal of the second switch is also connected to the judgment unit, the judgment unit controls whether the second conducting unit can acquire the current provided by the mirror current source by controlling the conduction state of the second switch. Its beneficial effects are: the buffer unit provided by the present invention has a simple structure and occupies a relatively small packaging area.

[0012] Optionally, the output unit includes: a second P-type field-effect transistor and a fourth P-type field-effect transistor; the source of the second P-type field-effect transistor is connected to the source of the first P-type field-effect transistor, the gate of the second P-type field-effect transistor is connected to the second terminal of the first switch, and the drain of the second P-type field-effect transistor is used to output the first voltage; the source of the fourth P-type field-effect transistor is connected to the source of the third P-type field-effect transistor, the gate of the fourth P-type field-effect transistor is connected to the second terminal of the second switch, and the drain of the fourth P-type field-effect transistor is used to output the second voltage.

[0013] Optionally, the determination unit includes a memory and a processor, wherein the memory stores a computer program that can run on the processor, and the processor, when running the computer program, performs the steps required to be executed by the determination unit as described in any one of the above-described methods.

[0014] Optionally, the switch based on the pre-charge circuit further includes: a first power module and a second power module, wherein the first power module is used to provide the first voltage and the second power module is used to provide the second voltage.

[0015] Thirdly, the present invention provides a stacked power supply system, comprising: a power supply chip, a powered chip, and a switch based on a pre-charge circuit as described in any one of the second aspects, wherein the power supply chip and the powered chip are stacked; the power supply chip is electrically connected to the switch based on the pre-charge circuit, and is used to acquire the output of the switch based on the pre-charge circuit, and to supply power to the powered chip according to the output of the switch based on the pre-charge circuit. Its advantage lies in that it can significantly reduce the package area of ​​the stacked power supply system while ensuring power supply efficiency. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of an embodiment of an automatic switching module provided by the present invention;

[0017] Figure 2 A schematic diagram of a switch structure embodiment based on a pre-charging circuit provided by the present invention;

[0018] Figure 3 This is a schematic diagram of a structural embodiment of a judgment unit provided by the present invention;

[0019] Figure 4 A schematic diagram of another embodiment of a switch based on a pre-charging circuit provided by the present invention;

[0020] Figure 5 This is a schematic diagram of a structural embodiment of a stacked power supply system provided by the present invention. Detailed Implementation

[0021] The technical solutions of the embodiments of this application are described below with reference to the accompanying drawings. In the description of the embodiments of this application, the terminology used in the following embodiments is for the purpose of describing specific embodiments only and is not intended to limit the application. As used in the specification and appended claims of this application, the singular expressions "a," "the," "the," "the," and "this" are intended to also include expressions such as "one or more," unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of this application, "at least one" and "one or more" refer to one or more (including two). The term "and / or" is used to describe the relationship between related objects, indicating that three relationships can exist; for example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship.

[0022] References to "one embodiment" or "some embodiments" in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized. The term "connection" includes direct connections and indirect connections, unless otherwise stated. "First" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated.

[0023] In the embodiments of this application, the words "exemplarily" or "for example" are used to indicate examples, illustrations, or explanations. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design solutions. Specifically, the use of the words "exemplarily" or "for example" is intended to present the relevant concepts in a specific manner.

[0024] This invention provides an automatic switching module, a switch based on a pre-charge circuit, and a stacked power supply system to solve the problems of low power supply efficiency and large package area caused by the power supply voltage of a single power source being limited by the load in the prior art.

[0025] This invention provides an automatic switching module, comprising: a first switch and a second switch electrically connected; the first switch is used to receive a first voltage, and the second switch is used to receive a second voltage, wherein the difference between the first voltage and the second voltage is greater than an activation voltage; the first switch is used to drive the second switch to conduct when the second voltage is greater than the first voltage, and the second voltage serves as the output voltage of the automatic switching module; the second switch is used to drive the first switch to conduct when the first voltage is greater than the second voltage, and the first voltage serves as the output voltage of the automatic switching module. In this application, the term "output voltage" refers to the output voltage of the automatic switching module, i.e., the output voltage that can be provided to external devices.

[0026] Compared to existing technologies, this invention does not require additional control of the first and second switches, nor the corresponding devices for generating control signals. It only requires two input voltages to turn the switches on and off, and uses the input voltage corresponding to the turned-on switch as the output voltage. Moreover, without the need for additional control, it reduces the design of many related devices, thereby improving the efficiency of power supply voltage while reducing the package area and power supply cost of the on-chip system.

[0027] Of course, the automatic switching module provided by this invention is not limited to containing only two switches; it can also contain more switches. The number of switches in the automatic switching module is related to the number of input voltages. Furthermore, the automatic switching module turns on the switch corresponding to the maximum voltage among these input voltages and uses that maximum voltage as the output voltage.

[0028] In some embodiments, both the first switch and the second switch are field-effect transistors (FETs), and both are P-type FETs. The source of the first switch is connected to the gate of the second switch, and the source of the first switch is also used to receive the first voltage. The drain of the first switch is connected to the drain of the second switch, serving as the output terminal of the automatic switching module. The source of the second switch is connected to the gate of the first switch, and the source of the second switch is also used to receive the second voltage. The N-well of the first switch is also connected to the drain of the first switch, and the N-well of the second switch is also connected to the drain of the second switch. The advantages are: this invention only requires two FETs of the same conduction type to be electrically connected in the above manner to achieve automated switching control. The design is simple, convenient, and can effectively save the area and static power consumption of the on-chip power management module (PMU). Furthermore, the conventional technique in the prior art is to connect the N-well of the P-type field-effect transistor to its source. However, this method cannot guarantee that the N-well of the P-type field-effect transistor can always be connected to a high level, which affects the effectiveness of the present invention. Therefore, in order to ensure that the N-well of the P-type field-effect transistor can always be connected to a high level, the present invention connects the N-well of the P-type field-effect transistor to the drain. This ensures that the two P-type field-effect transistors do not experience increased substrate bias due to the body effect, which would lead to increased on-resistance and deterioration of output impedance.

[0029] In some embodiments, both the first switch and the second switch are field-effect transistors (FETs), and both are N-type FETs. The drain of the first switch is connected to the gate of the second switch, and the drain of the first switch is also used to receive the first voltage. The source of the first switch is connected to the source of the second switch, serving as the output terminal of the automatic switching module. The drain of the second switch is connected to the gate of the first switch, and the drain of the second switch is also used to receive the second voltage. The P-well of the first switch is also connected to the source of the first switch, and the P-well of the second switch is also connected to the source of the second switch. The advantages are that this invention only requires two FETs of the same conduction type to be electrically connected in the above manner to achieve automated switching control, making the design simple and convenient. Furthermore, the conventional technique in the prior art is to connect the P-well of the N-type field-effect transistor to its drain. However, this method cannot guarantee that the P-well of the N-type field-effect transistor can always be connected to a high level, which affects the effectiveness of the present invention. Therefore, in order to ensure that the P-well of the N-type field-effect transistor can always be connected to a high level, the present invention connects the P-well of the N-type field-effect transistor to its drain. This ensures that the two N-type field-effect transistors do not experience increased substrate bias due to the body effect, which would lead to increased on-resistance and deterioration of output impedance.

[0030] Specifically, the turn-on voltage can be designed according to actual conditions. Optionally, when both the first switch and the second switch are P-type field-effect transistors, the turn-on voltage is the threshold voltage of the P-type field-effect transistor; when both the first switch and the second switch are N-type field-effect transistors, the turn-on voltage is the threshold voltage of the N-type transistor.

[0031] To further illustrate the invention described in this application, reference is made herein. Figure 1 Provide examples. For instance... Figure 1 As shown, the automatic switching module includes a first field-effect transistor (FET) Q1 and a second field-effect transistor (FET) Q2, both of which are P-type transistors. The source of the first FET Q1 is connected to the gate of the second FET Q2, and the source of the first FET Q1 also receives the first voltage Vdd1. The drain of the first FET Q1 is connected to the drain of the second FET Q2, serving as the output terminal Vout1 of the automatic switching module. The source of the second FET Q2 is connected to the gate of the first FET Q1, and the source of the second FET Q2 also receives the second voltage Vdd2. The N-well of the first FET Q1 is also connected to its drain, and the N-well of the second FET Q2 is also connected to its drain.

[0032] Based on the automatic switching module provided in the above embodiments, the present invention also provides a switch based on a pre-charging circuit. The pre-charging circuit-based switch includes: an automatic switching module, a pre-charging circuit, a judgment unit, and an output unit as described in any of the above embodiments. The pre-charging circuit includes a first buffer unit, a second buffer unit, and a mirror current source. The first buffer unit acquires a first voltage and charges the output unit under the action of the mirror current source. The second buffer unit acquires a second voltage and charges the output unit under the action of the mirror current source. The judgment unit acquires the output voltage and controls the output of the output unit by controlling the conduction state of the first buffer unit and the second buffer unit. Its beneficial effect is that the pre-charging circuit provided by the present invention can effectively prevent circuit breakdown caused by transient spike current at the moment the first switch or the second switch is turned on.

[0033] In some embodiments, refer to Figure 2 The mirrored current source includes: an adjustable bias current source S1, a first N-type field-effect transistor (FET) N1, a second N-type field-effect transistor (FET) N2, and a third N-type field-effect transistor (FET) N3. The bias current source S1 is electrically connected to the drain of the first N-type FET N1, the drain of the first N-type FET N1 is also connected to the gate of the first N-type FET N1, the gate of the first N-type FET N1 is also connected to the gate of the second N-type FET N2, and the gate of the third N-type FET N3. The source of the first N-type FET N1 is grounded. The drain of the second N-type FET N2 is connected to the second buffer unit, and the source of the second N-type FET N2 is grounded. The drain of the third N-type FET N3 is connected to the first buffer unit, and the source of the third N-type FET N3 is grounded. Its beneficial effect is that the mirrored current source provided by this invention can be adjusted according to the actual charging speed of the output unit to meet practical requirements.

[0034] Continue to refer to Figure 2The first buffer unit includes a first switch D1 and a first P-type field-effect transistor P1; the second buffer unit includes a second switch D2 and a third P-type field-effect transistor P3; the source of the first P-type field-effect transistor P1 is connected to the output unit and to acquire the first voltage Vdd1; the gate of the first P-type field-effect transistor P1 is connected to the first terminal of the first switch D1 and the drain of the first P-type field-effect transistor P1; the drain of the first P-type field-effect transistor P1 is also connected to the drain of the third N-type field-effect transistor N3; the second terminal of the first switch D1 is also connected to the judgment unit, and the judgment unit controls the conduction state of the first switch D1 to determine the output unit. The first conducting unit is able to control whether it can obtain the current provided by the mirror current source S1; the source of the third P-type field-effect transistor P3 is connected to the output unit and to obtain the second voltage; the gate of the third P-type field-effect transistor P3 is connected to the first terminal of the second switch D2 and the drain of the third P-type field-effect transistor P3; the drain of the third P-type field-effect transistor P3 is also connected to the drain of the second N-type field-effect transistor N2; the second terminal of the second switch D2 is also connected to the judging unit, and the judging unit controls whether the second conducting unit can obtain the current provided by the mirror current source S1 by controlling the conducting state of the second switch D2. Its beneficial effect is that the buffer unit provided by the present invention has a simple structure and occupies a relatively small package area.

[0035] In some embodiments, continue to refer to Figure 2 The output unit includes a second P-type field-effect transistor (FET) P2 and a fourth P-type field-effect transistor (FET) P4. The source of the second P-type FET P2 is connected to the source of the first P-type FET P1, the gate of the second P-type FET P2 is connected to the second terminal of the first switch D1, and the drain of the second P-type FET P2 is used to output the first voltage. The source of the fourth P-type FET P4 is connected to the source of the third P-type FET P3, the gate of the fourth P-type FET P4 is connected to the second terminal of the second switch D2, and the drain of the fourth P-type FET P4 is used to output the second voltage.

[0036] Specifically, the number of N-type transistors in the mirror current source is determined by the number of switches in the automatic switching module, i.e., by the number of input voltages. When the mirror current source contains L N-type transistors, where L is greater than or equal to 3, the L-1 N-type transistors (excluding the first N-type transistor) in the mirror current source each form a mirror current source structure with the first N-type transistor, resulting in L-1 mirror current source structures. The pre-charging circuit contains L-1 buffer units, each corresponding to one of the L-1 mirror current source structures. Therefore, the output unit also needs to contain L-1 P-type transistors, each corresponding to one of the buffer units. The automatic switching module also needs to contain L-1 switches, each corresponding to one of the P-type transistors in the output unit. Thus, the number of input voltages can be L-1, corresponding to one of the L-1 switches. The judgment unit, based on actual needs, controls the conduction of the L-1 buffer units to select one of the L-1 input voltages as the output voltage.

[0037] In some embodiments, the determination unit includes a memory and a processor, wherein the memory stores a computer program that can run on the processor, and the processor, when running the computer program, performs the steps required to be executed by the determination unit as described in any one of the above embodiments.

[0038] In other embodiments of this application, a judgment unit is disclosed, such as... Figure 3 As shown, the determination unit may include: one or more processors 301; a memory 302; a display 303; one or more application programs (not shown); and one or more computer programs 304. These devices can be connected via one or more communication buses 305. The one or more computer programs 304 are stored in the memory 302 and configured to be executed by the one or more processors 301. The one or more computer programs 304 include instructions that can be used to implement the functions of the determination unit described in any of the above-described examples.

[0039] Through the above description of the embodiments, those skilled in the art will clearly understand that, for the sake of convenience and brevity, only the division of the above functional modules is used as an example. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. The specific working process of the system, device, and unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0040] In the embodiments of this application, the functional units can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0041] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solutions of the embodiments of this application, in essence, or the parts that contribute to the prior art, or all or part of the technical solutions, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute all or part of the steps of the methods of the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as flash memory, portable hard disk, read-only memory, random access memory, magnetic disk, or optical disk.

[0042] In some embodiments, refer to Figure 4 The switch based on the pre-charge circuit further includes: a first power module 401 and a second power module 402, wherein the first power module 401 is used to provide the first voltage and the second power module 402 is used to provide the second voltage.

[0043] Of course, the pre-charge circuit-based switch provided by this invention is not limited to only two power modules; it can include more, with the specific number set according to actual conditions. The number of input voltages in the automatic switching module is determined by the number of power modules. In some embodiments, the pre-charge circuit-based switch may include: a first power module, a second power module, and a third power module; the first power module provides a first voltage level, the second power module provides a second voltage level, and the third power module provides a third voltage level; the third voltage level is greater than the second voltage level, and the difference between the third voltage level and the second voltage level is greater than 0.6 volts; the second voltage level is greater than the first voltage level, and the difference between the second voltage level and the first voltage level is greater than 0.6 volts. The first, second, and third automatic switching modules each include three P-type or N-type field-effect transistors. In this embodiment, the three switches in the first, second, and third automatic switching modules are all P-type transistors. The pre-charge circuit-based switch receives the first, second, and third voltage levels by electrically connecting the first, second, and third power modules, respectively. Of course, each power module can also supply power to different switches based on pre-charge circuits. The outputs of different switches based on pre-charge circuits can be the same or different. The judgment unit of the switch based on pre-charge circuits controls the conduction state of its internal buffer unit according to actual needs, so that the output voltage of the first power module, the second power module, and the third power module can be the first voltage level, the second voltage level, or the third voltage level.

[0044] Assuming the third voltage level is 5.5V, the second voltage level is 3V, and the first voltage level is 1.2V, the input terminals of the automatic switching module in the pre-charge circuit-based switch are used to receive the first voltage level, the second voltage level, or the third voltage level, respectively. The judgment unit in the pre-charge circuit-based switch, according to actual needs, controls the conduction state of its internal buffer unit to ensure that the output of the pre-charge circuit-based switch can be the first voltage level, the second voltage level, or the third voltage level.

[0045] When the switch based on the pre-charging circuit includes more power modules, its working principle is the same, and will not be described again here.

[0046] Based on the pre-charge circuit-based switch described in any of the above embodiments, the present invention also provides a stacked power supply system. The stacked power supply system includes: a power supply chip, a powered chip, and a pre-charge circuit-based switch as described in any of the second aspects, wherein the power supply chip and the powered chip are stacked; the power supply chip is electrically connected to the pre-charge circuit-based switch, and is used to acquire the output of the pre-charge circuit-based switch and to supply power to the powered chip according to the output of the pre-charge circuit-based switch. The number of chips can be determined according to the number of switches in the pre-charge circuit. The chips can have a one-to-one correspondence with the pre-charge circuit-based switches. Different pre-charge circuit-based switches can be connected to different chips to supply power to different chips. In specific circuit designs, refer to... Figure 5 The power supply chip and the powered chip are stacked, which greatly reduces the package area of ​​the stacked power supply system while ensuring power supply efficiency. The stacked design refers to arranging the chips layer by layer on the stacked power supply system. The package area of ​​the stacked power supply system depends on the chip with the largest surface area and the height achieved by the stacked chips. Because the chips are relatively thin but have large length and width, the stacked power supply system provided in this application converts multiple chips into a stacked arrangement, which can greatly reduce the package area. When there are two chips on the stacked power supply system, the arrangement of these two chips is as follows... Figure 5 As shown, Figure 5 (a) is a top view showing the arrangement of the power supply chip 501 and the powered chip 502. Figure 5 (b) is a front view of the arrangement of power supply chip 501 and powered chip 502. Of course, a stacked power supply system can contain more chips, and is not limited to this. Figure 5 Examples of restrictions are provided.

[0047] The above description is merely a specific implementation of the embodiments of this application, but the protection scope of the embodiments of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the embodiments of this application should be covered within the protection scope of the embodiments of this application. Therefore, the protection scope of the embodiments of this application should be determined by the protection scope of the claims.

Claims

1. A switch based on a pre-charge circuit, characterized in that, include: The system includes an automatic switching module, a pre-charging circuit, a judgment unit, and an output unit; the automatic switching module includes a first switch and a second switch electrically connected; the pre-charging circuit includes a first buffer unit, a second buffer unit, and a mirror current source. The first switch is used to receive a first voltage, and the second switch is used to receive a second voltage, wherein the difference between the first voltage and the second voltage is greater than the turn-on voltage; the first switch is used to drive the second switch when the second voltage is greater than the first voltage, causing the second switch to conduct, and the second voltage serves as the output voltage of the automatic switching module; the second switch is used to drive the first switch when the first voltage is greater than the second voltage, causing the first switch to conduct, and the first voltage serves as the output voltage of the automatic switching module. The first buffer unit acquires the first voltage and charges the output unit under the action of the mirror current source; the second buffer unit acquires the second voltage and charges the output unit under the action of the mirror current source. The mirror current source includes a bias current source with adjustable current magnitude, a first N-type field-effect transistor, a second N-type field-effect transistor, and a third N-type field-effect transistor. The bias current source is electrically connected to the drain of the first N-type field-effect transistor (FET), the drain of the first N-type FET is also connected to the gate of the first N-type FET, the gate of the first N-type FET is also connected to the gate of the second N-type FET and the gate of the third N-type FET, and the source of the first N-type FET is grounded; the drain of the second N-type FET is connected to the second buffer unit, and the source of the second N-type FET is grounded; the drain of the third N-type FET is connected to the first buffer unit, and the source of the third N-type FET is grounded. The first buffer unit includes a first switch and a first P-type field-effect transistor (FET); the second buffer unit includes a second switch and a third P-type FET; the source of the first P-type FET is connected to the output unit and to acquire the first voltage, and the gate of the first P-type FET is connected to the first terminal of the first switch and the drain of the first P-type FET; the drain of the first P-type FET is also connected to the drain of the third N-type FET; the second terminal of the first switch is also connected to the judgment unit, which controls whether the first buffer unit can acquire the current provided by the mirror current source by controlling the conduction state of the first switch; the source of the third P-type FET is connected to the output unit and to acquire the second voltage, and the gate of the third P-type FET is connected to the first terminal of the second switch and the drain of the third P-type FET; the drain of the third P-type FET is also connected to the drain of the second N-type FET; the second terminal of the second switch is also connected to the judgment unit, which controls whether the second buffer unit can acquire the current provided by the mirror current source by controlling the conduction state of the second switch. The judgment unit acquires the output voltage of the automatic switching module and controls the output of the output unit by controlling the conduction state of the first buffer unit and the second buffer unit. The judgment unit includes a memory and a processor. The memory stores a computer program that can run on the processor. When the processor runs the computer program, it executes the steps required by the judgment unit as described above.

2. The switch based on the pre-charge circuit according to claim 1, characterized in that, The output unit includes: a second P-type field-effect transistor and a fourth P-type field-effect transistor; The source of the second P-type field-effect transistor is connected to the source of the first P-type field-effect transistor, the gate of the second P-type field-effect transistor is connected to the second terminal of the first switch, and the drain of the second P-type field-effect transistor is used to output the first voltage. The source of the fourth P-type field-effect transistor is connected to the source of the third P-type field-effect transistor, the gate of the fourth P-type field-effect transistor is connected to the second terminal of the second switch, and the drain of the fourth P-type field-effect transistor is used to output the second voltage.

3. The switch based on the pre-charge circuit according to claim 1, characterized in that, Also includes: A first power module and a second power module, wherein the first power module is used to provide the first voltage and the second power module is used to provide the second voltage.

4. The switch based on the pre-charge circuit according to claim 1, characterized in that, Both the first switch and the second switch are field-effect transistors (FETs), and both are P-type FETs. The source of the first switch is connected to the gate of the second switch, and the source of the first switch is also used to receive the first voltage. The drain of the first switch is connected to the drain of the second switch, serving as the output terminal of the automatic switching module. The source of the second switch is connected to the gate of the first switch, and the source of the second switch is also used to receive the second voltage. The N-well of the first switch is also connected to the drain of the first switch, and the N-well of the second switch is also connected to the drain of the second switch.

5. The switch based on the pre-charge circuit according to claim 1, characterized in that, Both the first switch and the second switch are field-effect transistors (FETs), and both are N-type FETs. The drain of the first switch is connected to the gate of the second switch, and the drain of the first switch is also used to receive the first voltage. The source of the first switch is connected to the source of the second switch, serving as the output terminal of the automatic switching module. The drain of the second switch is connected to the gate of the first switch, and the drain of the second switch is also used to receive the second voltage. The P-well of the first switch is also connected to the source of the first switch, and the P-well of the second switch is also connected to the source of the second switch.

6. A stacked power supply system, characterized in that, include: The power supply chip, the powered chip, and the switch based on the pre-charging circuit as described in any one of claims 1 to 5 are stacked together; the power supply chip is electrically connected to the switch based on the pre-charging circuit, and is used to obtain the output of the switch based on the pre-charging circuit, and to supply power to the powered chip according to the output of the switch based on the pre-charging circuit.

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