Semiconductor encapsulation comprising core-shell structure photovoltaic power generation particles

Abstract

The present invention relates to a semiconductor package including a core-shell structured photovoltaic power generation particle as a power supply part, which can self-transport electric power, and to a semiconductor package that produces a voltage and a current required for a semiconductor by a photovoltaic power generation particle included in the inside of the semiconductor package, and easily drives the semiconductor package only by self-produced electric power, and overcomes a restriction on miniaturization of the semiconductor package by an external power supply. Also, the photovoltaic power generation particle is located between a semiconductor chip and a substrate, and miniaturization of the semiconductor package is easily achieved.

Description

Technical Field

[0001] This invention claims the benefit of Korean Patent Application No. 10-2021-0155993, filed with the Korean Intellectual Property Office on November 12, 2021, the entire contents of which are included in this invention.

[0002] This invention relates to a semiconductor package that can transmit electrical energy through photovoltaic power generation. Background Technology

[0003] Semiconductor packaging includes: a substrate such as a lead frame and a printed circuit board; a semiconductor chip attached to the substrate; conductive means such as conductive lines or bumps that can exchange electrical signals between the semiconductor chip and the substrate; and a molding resin used for molding to protect the semiconductor chip and conductive means from external damage.

[0004] Semiconductor packages made using the above methods are used as CPUs or memory on the motherboard of electronic devices (mobile phones, laptops, etc.). Most semiconductor packages are driven by the power supplied to the electronic device, and therefore consume a certain level of electrical energy.

[0005] As electronic instruments incorporate multiple semiconductor packages for CPUs and memory on their motherboards, this becomes a source of power consumption. However, the miniaturization of semiconductor packages has pushed the structural design of connecting to additional power supplies to their limits. Therefore, in environments such as IoT (Internet of Things) where independent sensing devices and their required communication devices are needed, semi-permanent power delivery devices must be installed inside the semiconductor packages. Summary of the Invention

[0006] The problem to be solved

[0007] The purpose of this invention is to realize a semiconductor package that can semi-permanently deliver electrical energy to semiconductors through photovoltaic power generation, and to provide a semiconductor package structure with high power output and easy miniaturization.

[0008] Problem Solution

[0009] To achieve the above objectives, the semiconductor package of the present invention includes a core-shell structure of photovoltaic power generation particles as a power source, the core-shell structure comprising a core and a shell.

[0010] At this time, the core and shell of the photovoltaic power generation particle are selected from different electrodes of the anode and cathode, respectively.

[0011] More specifically, the semiconductor package includes: a substrate; a power generation interconnect layer located on the substrate, including external terminals and the photovoltaic power generation particles; and a semiconductor layer located on the power generation interconnect layer.

[0012] At this time, the power generation connection layer includes multiple photovoltaic power generation particles, which are connected in series or in parallel, and the power generation connection layer includes multiple photovoltaic power generation particles that are spaced apart.

[0013] Specifically, the semiconductor layer includes a semiconductor chip and a mold portion surrounding the semiconductor chip, wherein the mold portion has light-transmitting properties.

[0014] The rearrangement layer is located between the power generation connection layer and the semiconductor layer, and one side of the rearrangement layer is covered with the external terminal and photovoltaic power generation particles in a single layer.

[0015] Furthermore, the rearrangement layer includes an extension extending toward at least a portion of the upper surface of the semiconductor layer, the photovoltaic particles being located on the extension, and the other side of the rearrangement layer also having the external terminals and photovoltaic particles attached in a single layer.

[0016] In addition, to increase power generation, the semiconductor package includes a reflective portion, and a reflective portion is formed around the power generation interconnect layer on the substrate.

[0017] Furthermore, the power generation bonding layer also places photovoltaic power generation particles around the periphery of the power generation bonding layer.

[0018] Invention Effects

[0019] The semiconductor package according to the present invention includes core-shell structured photovoltaic particles. These photovoltaic particles produce high electrical energy, and the package can be easily driven using only the self-generated energy. Therefore, the limitations on semiconductor package miniaturization can be overcome by connecting to an external power source. Furthermore, since the photovoltaic particles are located between the semiconductor chip and the substrate, miniaturization of the semiconductor package is easily achieved.

[0020] Furthermore, photovoltaic power generation particles embedded in the semiconductor package can be used to semi-permanently supply electrical energy to the semiconductor package, thus solving problems such as the deletion of semiconductor memory caused by the disconnection of external power in traditional technologies.

[0021] Using photovoltaic particles that can be easily connected in series or parallel as a power source for semiconductor packaging makes it easy to achieve the voltage and current required by the semiconductor. Attached Figure Description

[0022] Figure 1 The diagram shows a photovoltaic power generation particle, which is one of the components of the present invention, in which a first electrode and a second electrode are formed along the same direction.

[0023] Figure 2The diagram shows the configuration of a photovoltaic power generation particle, which is one of the components of the present invention, in which a first electrode and a second electrode are formed in opposite directions.

[0024] Figure 3 This is a schematic cross-sectional view of the main components of a semiconductor package according to an embodiment of the present invention.

[0025] Figure 4 This is a conceptual cross-sectional view of the semiconductor chip 11 and the mold portion 12 that surrounds and protects the semiconductor chip in the semiconductor layer 10 as an embodiment of the present invention.

[0026] Figure 5 This is a cross-sectional view of a structure having a rearranged layer 30 according to an embodiment of the present invention.

[0027] Figure 6 This is a cross-sectional view of a structure having an extension 31 with a rearranged layer 30 formed according to an embodiment of the present invention.

[0028] Figure 7 This is a cross-sectional view of a structure in which power generation connection layers 20 are formed on both sides of the rearranged layer 30 according to an embodiment of the present invention.

[0029] Figure 8 This is a cross-sectional view of a structure having a reflective portion 90 according to an embodiment of the present invention.

[0030] Figure 9 This is a cross-sectional view of a structure having a reflective portion 90 formed and a power generation connection layer 20 formed on both sides of the rearrangement layer 30 according to an embodiment of the present invention.

[0031] Figure 10 This is a bottom view of an embodiment including the arrangement of external terminals 40 and photovoltaic particles 50 in the power generation connection layer 20.

[0032] *Attachment Labels*

[0033] 10: Semiconductor layer; 20: Power generation interconnect layer

[0034] 30: Rearranged layer 31: Extension

[0035] 11: Semiconductor chip; 12: Mold section; 13: Silicon wafer pins

[0036] 14: Connecting part

[0037] 40: External terminal

[0038] 50: Photovoltaic power generation particle; 51: Shell; 52: Core

[0039] 53: First electrode; 54: Second electrode; 60: Substrate Detailed Implementation

[0040] When interpreting the terms or words used in this specification and claims, they should not be limited to their ordinary or dictionary meanings, but rather based on the inventor's appropriate definition of the concepts of the terms in order to describe the invention in the most preferred way, and can only be interpreted as meanings and concepts that conform to the technical ideas of the present invention.

[0041] Therefore, the embodiments and manufacturing examples described in this specification are merely the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. It should be understood that there are many equivalents and modifications that can replace them in this application.

[0042] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings to facilitate implementation by those skilled in the art. However, the present invention can be implemented in many different forms and is not limited to the manufacturing examples and embodiments described herein.

[0043] According to one aspect of the present invention, a semiconductor package is characterized by comprising: a core-shell structure of photovoltaic power-generating particles, the core-shell structure serving as a power source, comprising a core and a shell. The semiconductor package can be driven even in environments without an additional external power source. Of course, additional batteries or the like can be used to further supply electrical energy to the semiconductor package.

[0044] The photovoltaic power generation particles used as the semiconductor package power unit of the present invention are not ordinary flat solar cells, but a core-shell structure including a three-dimensional core and a shell. Figure 1 and Figure 2 The structures of photovoltaic power generation particles, which are components of the present invention, are shown respectively. Figure 1 and Figure 2 Figure 'a' shows the external structure of a photovoltaic particle, and figure 'b' is a cross-sectional view including its internal structure. Figure 1 As shown, the photovoltaic particle 50a includes: a core 52; and a shell 51 formed outside the core 52. In this case, the shell 51 does not completely cover the outside of the core 52, with one side of the core 52 exposed, forming a first electrode 53. Furthermore, a second electrode 54, electrically connected to the shell 51 and insulated from the core 52, is formed. In this case, the second electrode 54 has an additional insulating layer to facilitate insulation from the core 52. Figure 1 As shown in b, it can be a structure that only contacts the shell portion 51. Furthermore, as... Figure 1 In the embodiment shown, when the second electrode 54 is formed in the same direction as the first electrode, the second electrode 54 may have a ring-shaped form. Figure 1 The diagram shows a structure in which a photovoltaic power generation particle 50a, as a component of the present invention, has a first electrode 53 and a second electrode 54 formed on one side along the same direction. Figure 2An example is shown in which a second electrode 54 is formed in the photovoltaic particle 50b in the opposite direction to the direction in which the first electrode 53 is formed. Since it is insulated from the core, the second electrode 54 of the photovoltaic particle as a configuration of the present invention can be formed at any position on the surface of the shell 51 without restriction on its direction. Figure 1 The illustrated photovoltaic particle embodiment can be applied to structures where the anode and cathode, as power supply units of a semiconductor package, need to be formed on the same surface. Figure 2 The illustrated photovoltaic particle embodiment is applicable to structures where the anode and cathode, as semiconductor power sources, need to be formed on opposite sides.

[0045] The core portion 52 and shell portion 51 of the photovoltaic power generation particle 50 form the first electrode 53 and the second electrode 54, respectively. Specifically, the core portion 52 and shell portion 51 form different electrodes selected from the anode and cathode, respectively. For example, the core portion 52 contains P-type or N-type silicone plastic, and the shell portion 51 is formed on the outside of the core portion 52. The shell portion 51 is a diffusion layer with PN junction. The core portion 52 may further contain P-type or N-type dopants.

[0046] In one example of a photovoltaic particle 50, the core 52 is formed of P-type silicone plastic, and a shell 51, serving as an N-type diffusion layer, is formed on the surface of the core 52. The shell 51 can be fabricated using a doping process. At high temperature, POCl3, H3PO4, and other elements containing group V elements are diffused onto the P-type silicone plastic core 52. Therefore, an N-type diffusion layer, the shell 51, can be formed. Furthermore, the core 52 can have a structure where it is itself formed of silicone plastic, or it can have a structure where silicone plastic is coated onto an insulating sphere. The insulating sphere can be composed of various materials such as glass and ceramic. However, not limited to the above example, the P-type and N-type semiconductor configurations of the core 52 and shell 51 can be reversed; thus, the core 52 can be formed as an N-type semiconductor, and the shell 51 can be formed as a P-type semiconductor.

[0047] When generating electricity, photovoltaic particles 50 are not limited to ultraviolet light. They can also generate electricity through photons with weak energy, such as visible light and infrared light. Therefore, they are not limited to sunlight and can generate electricity even indoors.

[0048] Figure 3 The main components of a semiconductor package in one embodiment of the present invention are shown in a schematic diagram. For example... Figure 3As shown, in a specific structural example, the semiconductor package further includes: a substrate 60; a power generation interconnect layer 20 located on the substrate 60; and a semiconductor layer 10 located on the power generation interconnect layer 20. The power generation interconnect layer 20 refers to a layer that generates its own electrical energy while being electrically connected to the semiconductor layer 10 and the substrate 60. Specifically, the power generation interconnect layer 20 is characterized by including: external terminals that electrically connect the semiconductor layer 10 and the substrate 60 to transmit signals from the semiconductor; and photovoltaic power generation particles 50 that function as the power source of the semiconductor layer 10. When applying photovoltaic power generation flat panels according to conventional technology to semiconductor packaging, it is necessary to further process large wafers into smaller ones. At the same time, since the semiconductor requires a rated voltage of 0.5V or higher, it is also necessary to perform processes of connecting multiple diced wafers in series and connecting wafers in parallel to transmit the required current. However, there are significant technological challenges in connecting flat panel wafers. In contrast, the semiconductor package according to the present invention has the following features: it is extremely easy to connect photovoltaic power generation particles 50 in series and in parallel, and photovoltaic power generation particles with high power generation capacity can also be applied to semiconductor packaging. Therefore, compared with the semiconductor packaging of solar cells using flat panels in conventional technology, not only can the volume of semiconductor packaging be greatly reduced, but the power and voltage required by the semiconductor can also be delivered.

[0049] The core-shell structure of the photovoltaic particles 50 in the power generation connection layer 20 is a three-dimensional structure that absorbs light and generates electricity. Therefore, preferably, they do not come into contact with other photovoltaic particles or external terminals such as external terminals, except for the electrodes of the photovoltaic particles 50. For this reason, multiple photovoltaic particles 50 can be formed spaced apart in the power generation connection layer 20. At the same time, preferably, the photovoltaic particles 50 can also be spaced apart from the external terminals 40. When the external terminals 40 are configured to be connected to the signal circuit of the semiconductor layer 10, and the power generation connection layer 20 is designed to connect the power supply circuit of the semiconductor layer 10 to the photovoltaic particles 50, the three-dimensional structure in which the photovoltaic particles 50 are spaced apart has the following advantages: the layout of the external terminals 40 and the photovoltaic particles 50 can be easily designed according to the voltage and current required by the semiconductor layer 10.

[0050] In the power generation interconnect layer 20, the external terminal 40 can be in the shape of a conventional ball grid array, and the photovoltaic power generation particles 50 can be spherical, similar to the external terminal 40. Furthermore, the external terminal 40 of the ball grid array and the photovoltaic power generation particles 50 can be similar in size or the photovoltaic power generation particles 50 can be slightly smaller. For example, it is advantageous for the diameter of the photovoltaic power generation particles 50 to be about 20% smaller than that of the external terminal 40. This is because, typically, during the high-temperature reflow process, the metal of the external terminal 40 is melted and adhered to the silicon wafer pads of the packaging substrate 60, thereby reducing the height of the external terminal. However, the photovoltaic power generation particles are melted during manufacturing, reducing their height; therefore, a diameter approximately 20% smaller than that of the external terminal 40 may be advantageous. However, the size of the photovoltaic power generation particles is not particularly limited. The photovoltaic power generation particles can be used in conventional semiconductor packaging, preferably with a size of 0.3 to 2.0 mm for application in conventional semiconductor packaging.

[0051] Photovoltaic power generation particles 50 are located between substrate 60 and semiconductor layer 10. They can generate electricity using only light incident on the side of power generation link layer 20. However, to achieve better power generation, light incident through semiconductor layer can be utilized. Figure 4 The semiconductor chip 11, which is the main component of the semiconductor layer 10, and the mold portion 12 that surrounds and protects the semiconductor chip are shown conceptually. Figure 4 In this configuration, the connection between the semiconductor chip 11 and the substrate 60 can employ a conventional semiconductor packaging structure and is therefore omitted. When the semiconductor layer 10 is made of a light-transmitting material that allows light to be transmitted to the mold portion 12 protecting the semiconductor chip 11, the photon delivery to the photovoltaic power generation particles 50 located in the power generation connection layer 20 can be further increased, thereby further improving the power generation output of the power generation connection layer 20. Preferably, the mold portion is transparent; for example, various transparent resins such as epoxy-based, polyurethane-based, silicone-based, acrylic-based, polyimide-based, and PMMA-based resins can be used.

[0052] To deliver the voltage and current required for the semiconductor layer 10, a circuit is included that connects multiple photovoltaic power generation particles 50 in series or parallel. These multiple photovoltaic power generation particles 50 are included in the power generation connection layer 20. A rearrangement layer 30 can be further configured to neatly arrange the connection terminals 40 and the photovoltaic power generation particles 50. Figure 5The location of the rearrangement layer 30 is conceptually shown. The rearrangement layer 30 is situated between the power generation connection layer 20 and the semiconductor layer 10, and the rearrangement layer 30 and the substrate 60 fix the arrangement of the external terminals 40 and the photovoltaic particles 50. Preferably, one side of the rearrangement layer 30 has the external terminals 40 and photovoltaic particles 50 attached as a single layer, minimizing unnecessary connections within the semiconductor package, thereby achieving excellent photovoltaic power generation functionality, miniaturizing the semiconductor package, and improving reliability.

[0053] Individual photovoltaic particles can be electrically connected via the rearrangement layer 30. The rearrangement layer is not limited to the space between the semiconductor layer 10 and the power generation connection layer 20; it can attach photovoltaic particles while extending outwards to improve power generation efficiency. For example, the rearrangement layer 30 can extend to at least a portion of the upper surface of the semiconductor layer 10, forming an extension 31. Preferably, photovoltaic particles 50 are located on the extension 31 to increase power generation.

[0054] Figure 6 An embodiment showing the formation of the rearrangement layer 30 extension 31 is illustrated, showing the morphology when photovoltaic particles 50 are formed on the extension 31 covering the upper surface of the semiconductor layer 10. Meanwhile, Figure 6 The configuration of one embodiment of the semiconductor layer is shown in more detail. Figure 6 The semiconductor layer configurations shown can all be applied to the semiconductor layer 10 configuration of the present invention; however, the semiconductor layer 10 configuration of the present invention is not limited thereto. For example... Figure 6 In the semiconductor layer 10 shown, the silicon chip pins 13 of the semiconductor chip 11, which are responsible for processing information inside the semiconductor layer 10, can be electrically connected to the external terminals 40 of the power generation connection layer 20 via the connection portion 14. Furthermore, the mold portion 12 is used to protect the semiconductor chip 11, the silicon chip pins 13, and the connection portion 14, etc., and it can be a semiconductor package that wraps around a portion of the rearrangement layer 30 to bond the rearrangement layer 30 and the semiconductor layer 10.

[0055] To increase the power generation of the semiconductor package, external terminals 40 and photovoltaic particles 50 are formed not only on one side of the rearrangement layer 30 but also on the other side, thereby forming a power generation connection layer 20 on both sides of the rearrangement layer 30. The connection of photovoltaic particles is not particularly limited and can be achieved through wire bonding and flip chip bonding, etc., through the rearrangement layer. Figure 7 The structure of the rearranged layer 30 forming the power generation connection layer 20 on both sides is briefly shown. (See diagram below.) Figure 7As shown, the power generation connection layers 20a and 20b on both sides of the rearranged layer 30 can independently form external terminals and photovoltaic power generation particles. Considering the direction of incident light, preferably, the distribution height of the photovoltaic power generation particles in the upper power generation connection layer 20b is higher than that in the substrate direction power generation connection layer 20a, so as to achieve more efficient photovoltaic power generation and improve the information processing speed of semiconductor packaging.

[0056] To increase the amount of light transmitted to the photovoltaic particles 50, various reflective structures can be further incorporated into the semiconductor package. For example, the reflective structure can be formed by printing or machining.

[0057] In one example of increasing the light output of photovoltaic particles 50, the area of ​​the semiconductor package substrate 60 is typically larger than that of the semiconductor layer 10. Therefore, a reflective portion can be formed around the power generation interconnect layer 20 on the substrate 60. In this case, the reflective portion 90 can be formed only in a portion around the power generation interconnect layer, or it can be formed entirely around it. Figure 8 and Figure 9 Cross-sections of embodiments with reflective portions are shown in simplified form. When reflective portions are formed around the power generation interconnect layer 20 on the substrate 60, light incident on the substrate that cannot be used as electrical energy for the semiconductor package can be reflected by the reflective portions and transmitted to the power generation interconnect layer, thereby increasing the amount of light incident on the power generation interconnect layer and further increasing the power generation of the semiconductor package.

[0058] The reflective portion 90 is not limited to the substrate; it can be formed on the rearrangement layer or located between the external terminal 40 and the photovoltaic particles 50 in the power generation connection layer 20 to form an optical waveguide.

[0059] In the power generation interconnect layer 20, the photovoltaic power generation particles 50 can be located below the semiconductor chip 11 included in the semiconductor layer 10, together with the external terminal 40, or they can be located below the semiconductor layer 10, but not below the semiconductor chip 11. However, semiconductor chips typically have extremely poor light transmittance or no light transmittance. Therefore, preferably, the photovoltaic power generation particles 50 are located around the periphery of the power generation interconnect layer 20, so as to achieve high photovoltaic power generation in the semiconductor package using an equal amount of photovoltaic power generation particles 50. Figure 10 This is a bottom view of an embodiment including the arrangement of external terminals 40 and photovoltaic particles 50 in the power generation connection layer 20, showing the morphology of the photovoltaic particles formed around the power generation connection layer 20.

[0060] The semiconductor particles store the electrical energy generated by the photovoltaic particles and have a battery to supply electrical energy to the semiconductor layer when the light source is insufficient. Preferably, the battery is a rechargeable secondary battery.

[0061] The above description details the embodiments of the present invention, but the scope of the present invention is not limited thereto. Obviously, those skilled in the art to which this invention pertains can make various modifications and variations without departing from the technical concept of the present invention as described in the claims.

Claims

1. A semiconductor package, characterized in that: The photovoltaic power generation particles with a core-shell structure are included as the power source. The core-shell structure includes a core and a shell. The semiconductor package further includes: substrate; A power generation connection layer, located on the substrate, includes external terminals and the photovoltaic power generation particles; A semiconductor layer, which is located on the power generation interconnect layer; and A rearrangement layer, located between the power generation interconnect layer and the semiconductor layer, neatly arranges the external terminals and the photovoltaic particles. One side of the rearranged layer has the external terminals and photovoltaic particles attached in a single layer.

2. The semiconductor package according to claim 1, characterized in that: The core and shell of the photovoltaic power generation particles are selected from different electrodes, namely the anode and the cathode.

3. The semiconductor package according to claim 1, characterized in that: The power generation connection layer includes multiple photovoltaic particles. The photovoltaic particles are connected in series or in parallel.

4. The semiconductor package according to claim 1, characterized in that: The power generation connection layer comprises multiple photovoltaic power generation particles spaced apart.

5. The semiconductor package according to claim 1, characterized in that: The semiconductor layer includes: Semiconductor chips; and A mold portion surrounding the semiconductor chip.

6. The semiconductor package according to claim 5, characterized in that: The mold section is translucent.

7. The semiconductor package according to claim 1, characterized in that: The rearrangement layer includes an extension that extends toward at least a portion of the upper surface of the semiconductor layer. The photovoltaic particles are located on the extension.

8. The semiconductor package according to claim 1, characterized in that: The other side of the rearranged layer is also covered with the external terminals and photovoltaic particles in a single layer.

9. The semiconductor package according to claim 1, characterized in that: A reflective portion is formed around the power generation connection layer on the substrate.

10. The semiconductor package according to claim 1, characterized in that: Photovoltaic particles are placed around the power generation bonding layer.

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