Semiconductor structure and method of forming the same

Abstract

The application provides a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a semiconductor substrate, a gate trench is formed in the semiconductor substrate; forming a silicon-containing layer to be oxidized on the sidewall and bottom of the gate trench and the surface of the semiconductor substrate; oxidizing the silicon-containing layer to be oxidized to convert at least part of the silicon-containing layer to be oxidized into a silicon-containing oxide layer; and forming a gate layer to fill the gate trench on the surface of the silicon-containing oxide layer. The application provides a semiconductor structure and a forming method thereof. Instead of forming a gate dielectric layer directly through a deposition process, a silicon-containing layer to be oxidized which is easy to be oxidized is formed first, and then the silicon-containing layer to be oxidized is oxidized to form a silicon-containing oxide layer which serves as a gate dielectric layer, so that the performance and reliability of a silicon carbide device with a trench gate structure can be improved.

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