Dispensing component for a semiconductor processing system

Abstract

An example substrate processing system can include a chamber body defining a transfer region. The system can include a first cover plate disposed on the chamber body along a first surface of the first cover plate. The first cover plate can define a plurality of apertures through the first cover plate. The system can include a plurality of cover stacks equal to a number of apertures of the plurality of apertures defined through the first cover plate. The system can include a plurality of isolators. An isolator of the plurality of isolators can be positioned between each cover stack of the plurality of cover stacks and a corresponding aperture of the plurality of apertures defined through the first cover plate. The system can include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates can be disposed on each isolator of the plurality of isolators.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Patent Application No. 16 / 934,227, filed July 21, 2020, entitled “DISTRIBUTION COMPONENTS FORSEMICONDUCTOR PROCESSING SYSTEMS”, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This technology relates to semiconductor processing equipment. More specifically, this technology relates to semiconductor chamber components that provide fluid distribution. Background Technology

[0004] Semiconductor processing systems typically use clustering tools to integrate multiple process chambers together. This configuration facilitates the execution of several sequential processing operations without removing the substrate from the controlled processing environment, or it allows similar processes to be performed on multiple substrates simultaneously in different chambers. For example, these chambers may include degassing chambers, pretreatment chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etching chambers, metering chambers, and other chambers. The combination of chambers in the clustering tool, along with the operating conditions and parameters for these chambers, is selected to fabricate specific structures using specific process formulations and flow profiles.

[0005] Processing systems can use one or more components to distribute precursors or fluids into the processing area, which can improve the uniformity of distribution. Some systems can provide the distribution of multiple precursors or fluids for different processing operations and cleaning operations. Maintaining fluid isolation of materials while providing uniform distribution across multiple systems can be challenging and may require the combination of complex and expensive components.

[0006] Therefore, there is a need for improved systems and components that can be used to produce high-quality semiconductor devices. This technology addresses these and other needs. Summary of the Invention

[0007] An exemplary substrate processing system may include a chamber body defining a transport region. The system may include a first cover plate disposed on the chamber body along a first surface of the first cover plate. The first cover plate may define a plurality of orifices through the first cover plate. The system may include a plurality of cover stacks equal in number to the plurality of orifices defined by the first cover plate. The plurality of cover stacks may at least partially define a plurality of processing regions perpendicularly offset from the transport region. The system may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each of the plurality of cover stacks and a corresponding orifice among the plurality of orifices defined by the first cover plate. The system may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be disposed on each of the plurality of isolators.

[0008] In some embodiments, each of the plurality of isolators may define a recessed boss, and an associated dielectric plate of the plurality of dielectric plates is disposed on the recessed boss. A gap of less than 5 mm or about 5 mm may be maintained between each of the plurality of dielectric plates and each associated cover stack of the plurality of cover stacks. The transfer area may include a transfer device rotatable about a central axis and configured to engage with a substrate and transfer a substrate between a plurality of substrate supports within the transfer area. The system may include a second cover plate defining a plurality of orifices through the second cover plate. The second cover plate may be disposed on a plurality of cover stacks. Each of the plurality of orifices through the second cover plate allows access to a cover stack of the plurality of cover stacks. Each cover stack of the plurality of cover stacks may include a panel. The second cover plate may define a first orifice that enters the panel of each cover stack of the plurality of cover stacks at a first location. The second cover plate may define a second orifice that enters the panel of each cover stack of the plurality of cover stacks at a second location.

[0009] Each of a plurality of cover stacks may include a first plate defining a set of channels in a first surface. The set of channels may extend from a first location adjacent to a first aperture extending through a second cover plate into the panel. The set of channels may extend to a second location where the first aperture extends through the panel. The first plate may define a second aperture extending through the panel at a third location adjacent to the second aperture extending through the second cover plate into the panel. The system may include a first manifold disposed in the first aperture through the second cover plate and fluidly coupled to a first fluid source. The system may include a second manifold disposed in a second aperture through the second cover plate and fluidly coupled to a second fluid source. The second cover plate may define a third aperture entering the panel of each of the plurality of cover stacks at a third location. The substrate processing system may also include a plurality of RF feedthroughs. The RF feedthroughs may extend through each of the third apertures in the second cover plate and contact the panels of an associated cover stack. The system may include an isolator positioned between the second cover plate and the panels of each of the plurality of cover stacks.

[0010] Some embodiments of this technology may cover a substrate processing chamber panel. The panel may include a first plate defining a first set of channels in a first surface of the first plate. The first set of channels may extend from a first location to a plurality of second locations. Each of the plurality of second locations may define a first aperture extending through the first plate. The panel may include a second plate coupled to the first plate. The second plate may define a plurality of first apertures extending through the second plate. The second plate may define a greater number of apertures than the first plate. The panel may include a third plate coupled to the second plate. The third plate may include a plurality of tubular extensions extending from a first surface of the third plate toward the second plate. The third plate may include the same number of tubular extensions as the first apertures of the second plate. Each tubular extension of the third plate may be axially aligned with a corresponding first aperture through the second plate. The panel may include a fourth plate coupled to the third plate. The fourth plate may define a plurality of first apertures extending through the fourth plate. The fourth plate may define a greater number of apertures than the second plate.

[0011] In some embodiments, a first plate may define a second set of channels in a second surface of a first plate opposite a first surface. Each channel in the second set of channels may extend through the first plate from a first orifice at each of a plurality of second locations on the first plate. Each channel in the second set of channels may extend through the first plate from a first orifice along the second surface of the first plate in at least two directions at each of the plurality of second locations on the first plate. A plurality of first orifices extending through the first plate may be defined at each of the plurality of second locations on the first plate. The first plate may define a second orifice extending through the first plate at a third location. A second plate may define a second orifice extending through the second plate. The second orifice of the second plate may be axially aligned with the second orifice of the first plate. Coupling of the second plate and the third plate may form a volume defined by a tubular extension surrounding the third plate. A third channel may be formed through the second orifice extending through the second plate and the second orifice extending through the first plate. Fluid access to the volume may be made through the third channel.

[0012] A third plate may define a plurality of second orifices extending through the third plate. A fourth plate may define a plurality of second orifices extending through the fourth plate. A plurality of fourth channels may be formed through the plurality of second orifices extending through the third plate and the plurality of second orifices extending through the fourth plate. Fluid access to the volume may be made through the plurality of fourth channels. A first orifice of the first plate, a first orifice of the second plate, a tubular extension of the third plate, and a first orifice of the fourth plate may form a first flow path through the substrate processing chamber panel, the first flow path being fluidly isolated from a second flow path extending through the substrate processing chamber panel through the third channel, the plurality of fourth channels, and the volume.

[0013] Some embodiments of this technology may cover a substrate processing system. The system may include a processing chamber defining a processing area. The system may include a panel positioned within the processing chamber. The panel may include a first plate defining a first set of channels in a first surface of the first plate. The first set of channels may extend from a first location to a plurality of second locations. Each of the plurality of second locations may define a first aperture extending through the first plate. The panel may include a second plate coupled to the first plate. The second plate may define a plurality of first apertures extending through the second plate. The second plate may define a greater number of apertures than the first plate. The panel may include a third plate coupled to the second plate. The third plate may include a plurality of tubular extensions extending from a first surface of the third plate toward the second plate. The third plate may include the same number of tubular extensions as the first apertures of the second plate. Each tubular extension of the third plate may be axially aligned with a corresponding first aperture through the second plate. The panel may include a fourth plate coupled to the third plate. The fourth plate may define a plurality of first apertures extending through the fourth plate. The fourth plate may define a greater number of apertures than the second plate.

[0014] Compared to conventional systems and techniques, such techniques offer numerous advantages. For example, floating dielectric plates allow for controlled ion bombardment and deposition on the overlay panel. Additionally, the panel provides a mechanism for uniformly distributing various precursors throughout the processing area. These and other embodiments, along with their many advantages and features, are described in more detail below with reference to the accompanying drawings. Attached Figure Description

[0015] The nature and advantages of this disclosure can be further understood by referring to the remainder of the specification and the accompanying drawings.

[0016] Figure 1A A schematic top view of an exemplary processing tool according to some embodiments of the present technology is shown.

[0017] Figure 1B A schematic partial cross-sectional view of an exemplary processing system according to some embodiments of the present technology is shown.

[0018] Figure 2 A schematic isometric view of the transfer portion of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0019] Figure 3 A partial schematic cross-sectional view of an exemplary system arrangement of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0020] Figure 4 A partial schematic cross-sectional view of an exemplary system arrangement of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0021] Figure 5 A schematic top view of a cover stack component of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0022] Figure 6A A schematic top view of a panel according to some embodiments of the present technology is shown.

[0023] Figure 6B A schematic bottom view of a panel according to some embodiments of the present technology is shown.

[0024] Figure 7A A schematic bottom view of a panel according to some embodiments of the present technology is shown.

[0025] Figure 7B A schematic bottom view of a panel according to some embodiments of the present technology is shown.

[0026] Figure 8A A schematic top view of a panel according to some embodiments of the present technology is shown.

[0027] Figure 8B A schematic cross-sectional view of a panel according to some embodiments of the present technology is shown.

[0028] Figure 9A A schematic top view of a panel according to some embodiments of the present technology is shown.

[0029] Figure 9B A schematic cross-sectional view of a panel according to some embodiments of the present technology is shown.

[0030] Figure 10 A schematic partial cross-sectional view of an exemplary system arrangement of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0031] Several of the accompanying drawings are schematic diagrams. It should be understood that the drawings are for illustrative purposes and should not be considered to be to scale unless explicitly stated otherwise. Furthermore, the drawings are provided as schematic diagrams to aid understanding, and may not include all aspects or information compared to the actual representation, and may include enlarged material for illustrative purposes.

[0032] In the accompanying drawings, similar parts and / or features may have the same reference numerals. Additionally, parts of the same type may be distinguished by a letter following the reference numeral to differentiate between similar parts. If only the first reference numeral is used in the specification, the description applies to any of the similar parts having the same first reference numeral, regardless of the lettering. Detailed Implementation

[0033] Substrate processing can include time-intensive operations of adding, removing, or otherwise modifying material on wafers or semiconductor substrates. Efficiently moving substrates reduces queuing time and increases substrate throughput. To increase the number of substrates processed within a clustering tool, additional chambers can be incorporated into the host unit. While it is possible to continuously add transfer robots and processing chambers by extending the tool, this can become space-inefficient as the footprint of the clustering tool increases. Therefore, this technique can include clustering tools with an increased number of processing chambers within a defined footprint. To accommodate a limited footprint with respect to a transfer robot, this technique can increase the number of processing chambers extending laterally outward from the robot. For example, some conventional clustering tools may include one or two processing chambers positioned as part of a centrally located transfer robot to maximize the number of chambers radially surrounding the robot. This technique can extend this concept by laterally incorporating additional chambers as another row or group of chambers. For example, this technique can be applied to clustering tools comprising three, four, five, six, or more processing chambers accessible at each of one or more robot entry positions.

[0034] Because additional process locations are added, access to these locations from a central robot may no longer be feasible without additional transfer capacity at each location. Some conventional techniques may include a wafer carrier, on which the substrate remains held during the changeover. However, wafer carriers can cause thermal inhomogeneities and particle contamination on the substrate. This technique overcomes these problems by combining a transfer section perpendicularly aligned to the processing chamber area with a turntable or transfer device that can operate in conjunction with a central robot to access additional wafer locations. Substrate supports can then be vertically translated between the transfer and processing areas to transport the substrate for processing.

[0035] Each individual processing location may include a separate cap stack to provide improved and more uniform delivery of the processed precursor to individual processing areas. To improve the delivery of one or more fluids or precursors through the cap stack, some embodiments of this technology may include a multi-plate panel that provides a defined flow path to uniformly distribute the precursor to the processing area across the panel. Since the panel can typically be a component defining the processing area from above, it may be exposed to plasma material or deposited material. This can increase component wear and cleaning requirements. In some embodiments of this technology, an additional dielectric plate may be incorporated between the substrate and the panel in the system, providing protection for the panel.

[0036] While the remainder of the disclosure will conventionally identify specific structures (such as four-position transfer areas where this structure and method may be employed), it will be readily understood that the panels or components discussed can be similarly employed in any number of other systems or chambers, and in any other means in which multiple components may be combined or coupled. Therefore, this technology should not be construed as being limited to use only with any particular chamber. Furthermore, while exemplary tool systems will be described to provide the basis for this technology, it should be understood that this technology can be combined with any number of semiconductor processing chambers and tools that may benefit from some or all of the described operations and systems.

[0037] Figure 1 shows a top plan view of an example of a substrate processing tool or system 100 with deposition, etching, baking, and curing chambers according to some embodiments of the present technology. In the figure, a set of front-opening standard chambers 102 provides substrates of various sizes, which are received by robotic arms 104a and 104b within a factory interface 103 and placed into a loading lock or low-pressure holding area 106 before being transported to one of the substrate processing areas 108 located in a chamber system or quaternary sections 109a to 109c. The chamber system or quaternary sections 109a to 109c may each be a substrate processing system having a transport area fluidly coupled to multiple processing areas 108. Although a quaternary system is illustrated, it should be understood that the present technology equally encompasses platforms incorporating independent chambers, dual chambers, and other multi-chamber systems. A second robotic arm 110, housed in a transfer chamber 112, can be used to transfer substrate wafers from holding region 106 to quaternion section 109 and back from quaternion section 109 to holding region 106, and the second robotic arm 110 can be housed in the transfer chamber, which can be connected to each of the quaternion section or processing system. Each substrate processing region 108 can be configured to perform multiple substrate processing operations, including any number of deposition processes (including periodic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition) as well as etching, pre-cleaning, annealing, plasma treatment, degassing, orientation, and other substrate processes.

[0038] Each quaternary region 109 may include a transfer area that receives and transfers a substrate from and to a second robotic arm 110. The transfer areas of the chamber system may be aligned with transfer chambers having the second robotic arm 110. In some embodiments, the robot may enter the transfer area laterally. In subsequent operations, components of the transfer section may vertically translate the substrate into the overlying processing area 108. Similarly, the transfer areas may also be operable to rotate the substrate between positions within each transfer area. The substrate processing system 108 may include any number of system components for depositing, annealing, curing, and / or etching film of material on a substrate or wafer. In one configuration, two sets of processing areas (such as the processing areas in quaternary sections 109a and 109b) may be used to deposit material on the substrate, and a third set of processing chambers (such as the processing chambers or areas in quaternary section 109c) may be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers (such as all twelve chambers illustrated) may be configured to deposit and / or cure films on the substrate.

[0039] As shown in the figure, the second robotic arm 110 may include two arms for simultaneously transporting and / or retrieving multiple substrates. For example, each quaternion 109 may include two inlets 107 along the surface of the housing of the transport area, the two inlets 107 being laterally aligned with the second robotic arm. Inlets may be defined along a surface adjacent to the transport chamber 112. In some embodiments, as shown, a first inlet may be aligned with a first substrate support among the multiple substrate supports of the quaternion. Additionally, a second inlet may be aligned with a second substrate support among the multiple substrate supports of the quaternion. The first substrate support may be adjacent to the second substrate support, and in some embodiments, the two substrate supports may define a first row of substrate supports. As shown in the illustrated configuration, the second row of substrate supports may be positioned after the first row of substrate supports extending laterally outward from the transport chamber 112. The two arms of the second robotic arm 110 may be spaced apart to allow both arms to simultaneously enter the quaternion or chamber system to transport one or two substrates to or retrieve one or two substrates from the substrate supports in the transport area.

[0040] Any one or more of the described transfer regions can be combined with other chambers separate from the manufacturing systems shown in the different embodiments. It will be understood that processing system 100 envisions additional configurations for chambers used for material film deposition, etching, annealing, and curing. Additionally, any number of other processing systems can be used with this technology, wherein a transfer system can be combined for performing any of the specific operations, such as substrate movement. In some embodiments, a processing system that provides access to multiple processing chamber regions while maintaining a vacuum environment in each section (such as the indicated holding and transfer regions) allows operations to be performed in multiple chambers while maintaining a specific vacuum environment between discrete processes.

[0041] Figure 1B A schematic cross-sectional front view of one embodiment of an exemplary processing tool, such as one that passes through a chamber system, is shown according to some embodiments of the present technology. Figure 1B A cross-sectional view through any two adjacent processing regions 108 of any quaternary portion 109 can be illustrated. A front view can illustrate the configuration of one or more processing regions 108 or the fluid coupling of one or more processing regions 108 with a transfer region 120. For example, a continuous transfer region 120 may be defined by a transfer region housing 125. The housing may define an open internal volume in which multiple substrate supports 130 may be disposed. For example, as Figure 1AAs shown, an exemplary processing system may include four or more substrate supports 130 distributed within a housing around a transfer area. The substrate supports may be bases as shown, although several other configurations may also be used. In some embodiments, the base may be vertically translatable between the transfer area 120 and a processing area covering the transfer area. The substrate supports may be vertically translatable along a path between a first position and a second position within the chamber system along a central axis of the substrate support. Thus, in some embodiments, each substrate support 130 may be axially aligned with an overlying processing area 108 defined by one or more chamber components.

[0042] An open transfer area provides the ability of a transfer device 135 (such as a turntable) to engage and (e.g., rotatably) move substrates between various substrate supports. The transfer device 135 can rotate about a central axis. This allows substrates to be positioned for processing in any of the processing areas 108 within the processing system. The transfer device 135 may include one or more end actuators that can engage substrates from above, below, or at the outer edge of the substrate for movement around the substrate supports. The transfer device may receive substrates from a transfer chamber robot (such as the previously described robot 110). The transfer device may then rotate the substrates to alternating substrate supports to facilitate the transfer of additional substrates.

[0043] Once positioned and awaiting processing, the transfer device can position the terminal actuator or arm between the substrate supports, allowing the substrate supports to rise through the transfer device 135 and transport the substrate to a processing area 108, which may be vertically offset from the transfer area. For example, and as shown, substrate support 130a can transport the substrate to processing area 108a, while substrate support 130b can transport the substrate to processing area 108b. This can occur together with two other substrate supports and processing areas, as well as additional substrate supports and processing areas in embodiments that include additional processing areas. In this configuration, when operatively engaged for processing a substrate (e.g., in a second position), the substrate supports may define the processing area 108 at least partially from below, and the processing area may be axially aligned with the associated substrate support. The processing area may be defined from above by panel 140 and other cover stack components. In some embodiments, each processing area may have an individual cover stack component, although in some embodiments, the components may accommodate multiple processing areas 108. Based on this configuration, in some embodiments, each processing region 108 may be fluidly coupled to the transport region while being fluidly isolated from above from each other processing region within the chamber system or quaternary section.

[0044] In some embodiments, panel 140 may operate as an electrode of the system to generate localized plasma within processing region 108. As shown, each processing region may use or incorporate a separate panel. For example, panel 140a may be included to define processing region 108a from above, and panel 140b may be included to define processing region 108b from above. In some embodiments, a substrate support may operate as an accompanying electrode to generate capacitively coupled plasma between the panel and the substrate support. Depending on the geometry of the volume, pumping pad 145 may define processing region 108 at least partially radially or laterally. Again, a separate pumping pad may be used for each processing region. For example, pumping pad 145a may define processing region 108a at least partially radially, and pumping pad 145b may define processing region 108b at least partially radially. In embodiments, baffle 150 may be positioned between cover 155 and panel 140, and again, a separate baffle may be included to facilitate fluid distribution within each processing region. For example, a baffle 150a may be included for dispensing toward the processing area 108a, and a baffle 150b may be included for dispensing toward the processing area 108b.

[0045] Cover 155 may be a separate component for each processing area, or cover 155 may include one or more common aspects. In some embodiments, cover 155 may be one of two separate covers for the system. For example, a first cover 158 may be disposed over a transfer area housing 125. The transfer area housing may define an open volume, and the first cover 158 may include a plurality of orifices through the cover, which divide the covered volume into specific processing areas. In some embodiments, as shown, cover 155 may be a second cover and may be a single component defining a plurality of orifices 160 for delivering fluid to an individual processing area. For example, cover 155 may define a first orifice 160a for delivering fluid to processing area 108a, and cover 155 may define a second orifice 160b for delivering fluid to processing area 108b. When additional processing areas are included within each portion, additional orifices may be defined for the additional processing areas within each portion. In some embodiments, each quaternion 109, or a multi-processing region portion accommodating more or fewer than four substrates, may include one or more remote plasma units 165 for delivering plasma effluent into a processing chamber. In some embodiments, individual plasma units may be combined for each chamber processing region, although in some embodiments, fewer remote plasma units may be used. For example, as shown, a single remote plasma unit 165 may be used for multiple chambers, such as two, three, four, or more chambers up to all chambers for a particular quaternion. Conduits may extend from the remote plasma unit 165 to each orifice 160 for delivering plasma effluent for processing or cleaning in embodiments of the present technology.

[0046] In some embodiments, the purification channel 170 may extend through a transfer area housing adjacent to or near each substrate support 130. For example, multiple purification channels may extend through the transfer area housing to provide fluid inlets for delivering fluid-coupled purification gas into the transfer area. The number of purification channels may be the same as or different from the number of substrate supports within the processing system (including more or fewer). For example, the purification channel 170 may extend through the transfer area housing beneath each substrate support. For the two illustrated substrate supports 130, a first purification channel 170a may extend through the housing of an adjacent substrate support 130a, and a second purification channel 170b may extend through the housing of an adjacent substrate support 130b. It should be understood that any additional substrate support may similarly have a tubular purification channel extending through the transfer area housing to provide purification gas into the transfer area.

[0047] When purified gas is delivered through one or more of the purification channels, it can similarly be discharged through pumping liner 145, which provides all exhaust paths from the treatment system. Therefore, in some embodiments, both the treatment precursor and the purified gas can be discharged through the pumping liner. The purified gas can flow upwards to the associated pumping liner, for example, the purified gas flowing through the purification channel 170b can be discharged from the treatment system by pumping liner 145b.

[0048] As indicated, the processing system, or more specifically, the quaternary component or chamber system combined with processing system 100 or other processing systems, may include a transport section located below the illustrated processing chamber region. Figure 2 A schematic isometric view of the transport portion of an exemplary chamber system 200 according to some embodiments of the present technology is shown. Figure 2 Other aspects or variations of the transfer region 120 described above may be illustrated, and may include any of the described components or characteristics. The illustrated system may include a transfer region housing 205 defining the transfer region, which may include multiple components. The transfer region may additionally consist at least partially of a processing chamber or processing area (such as...) fluidly coupled to the transfer region. Figure 1A The processing chamber region 108 illustrated in the quaternary section is defined from above. The sidewalls of the transfer area housing may define one or more access positions 207 via which substrates can be transported and retrieved (e.g., via a second robotic arm 110 as discussed above). The access position 207 may be a slit valve or other sealable access position, including, in some embodiments, a door or other sealing mechanism that provides an airtight environment within the transfer area housing 205. Although two such access positions 207 are illustrated, it should be understood that in some embodiments only a single access position is included, as well as access positions on multiple sides of the transfer area housing. It should also be understood that the illustrated transfer section may be sized to accommodate substrates of any size (including 200 mm, 300 mm, 450 mm, or larger or smaller), including substrates characterized by any number of geometries or shapes.

[0049] The transfer area housing 205 may contain a plurality of substrate supports 210 positioned around the volume of the transfer area. Although four substrate supports are illustrated, it should be understood that embodiments of the present technology similarly cover any number of substrate supports. For example, according to embodiments of the present technology, the transfer area may accommodate more than three or about three, more than four or about four, more than five or about five, more than six or about six, more than eight or about eight, or more substrate supports 210. A second robotic arm 110 may pass through inlet 207 to transport substrates to either or both of substrate supports 210a or 210b. Similarly, the second robotic arm 110 may retrieve substrates from these locations. A lifting rod 212 may protrude from the substrate support 210 and allow the robot to enter from below the substrate. The lifting rod may be fixed to the substrate support, or located in a position where the substrate support can be recessed from below, or in some embodiments the lifting rod may additionally be raised or lowered via the substrate support. The substrate support 210 is vertically translatable, and in some embodiments, the substrate support 210 may extend into the processing chamber region of the substrate processing system, such as the processing chamber region 108 located above the transfer area housing 205.

[0050] The transfer area housing 205 can provide an inlet 215 for an alignment system, which may include an aligner extending through an aperture in the illustrated transfer area housing and operable in conjunction with a laser, camera, or other monitoring device protruding or conveying through adjacent apertures, and determining whether the translated substrate is properly aligned. The transfer area housing 205 may also include a transfer device 220, which can operate in various ways to position substrates and move substrates between various substrate supports. In one example, the transfer device 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, allowing additional substrates to be transported into the transfer chamber. Additional transfer operations may include rotating substrates between substrate supports for further processing in the overlying processing area.

[0051] The transfer device 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. A terminal actuator 235 may be coupled to a shaft. The terminal actuator 235 may include a plurality of arms 237 extending radially or laterally outward from the central hub. Although a central body from which the arms extend is illustrated, in various embodiments, the terminal actuator may additionally include individual arms, each coupled to a shaft or the central hub. Any number of arms may be included in embodiments of the art. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as shown, for four substrate supports, the transfer device 220 may include four arms extending from the terminal actuator. The arms may be characterized by any number of shapes and profiles, such as straight or curved profiles, and include any number of distal profiles, including hooks, loops, forks, or other designs for supporting substrates and / or providing access to the substrates (such as for alignment or engagement).

[0052] During transport or movement, the terminal actuator 235 or components or portions of the terminal actuator may be used to contact the substrate. These components and the terminal actuator may be made of or may include a variety of materials, including conductive and / or insulating materials. In some embodiments, materials may be coated or electroplated to withstand contact with precursors or other chemicals that may enter the transport chamber from the overlying processing area.

[0053] Additionally, materials may be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, a substrate support is operable to heat a substrate disposed on the support. The substrate support may be configured to raise the surface or substrate temperature to above 100°C or about 100°C, above 200°C or about 200°C, above 300°C or about 300°C, above 400°C or about 400°C, above 500°C or about 500°C, above 600°C or about 600°C, above 700°C or about 700°C, above 800°C or about 800°C, or higher. Any of these temperatures may be maintained during operation, thereby exposing components of the conveying device 220 to any of these stated or covered temperatures. Therefore, in some embodiments, any of the materials may be selected to accommodate these temperature ranges, and materials such as ceramics and metals may be included, which may be characterized by a relatively low coefficient of thermal expansion or other advantageous properties.

[0054] The component coupling can also be adapted for operation in high-temperature and / or corrosive environments. For example, where both the end actuator and the end portion are ceramic, the coupling may include crimp fittings, snap-fit ​​fittings, or other fittings (such as bolts) that do not include additional material that may expand and contract with temperature and cause cracking in the ceramic. In some embodiments, the end portion may be formed continuously with the end actuator and may be integrally formed with the end actuator. Any number of other materials that may promote resistance during or after operation can be used and are similarly covered in this art.

[0055] Figure 3 A schematic partial cross-sectional view of an exemplary processing system 300 arrangement according to some embodiments of the present technology is shown. The figure may illustrate aspects of the processing system and components described above, and may also illustrate additional aspects of the system. Additional versions of the system may be illustrated, in which multiple components are removed or modified to illustrate fluid flow through the cover stack components. It should be understood that processing system 300 may include any aspect of any part of a processing system described or illustrated elsewhere, and may illustrate aspects of a cover stack combined with any of the systems described elsewhere. For example, processing system 300 may illustrate a part of a system covering a transfer area of ​​a chamber, and may illustrate components positioned above a chamber body defining the transfer area as previously described. It should be understood that any previously indicated components, such as those including the transfer area and any previously described components for a system including components of processing system 300, may still be incorporated.

[0056] As noted above, a multi-chamber system may include individual cover stacks for each processing region. Processing system 300 may illustrate a view of a cover stack, which may be part of a multi-chamber system comprising two, three, four, five, six, or more processing chamber portions. However, it should be understood that the described cover stack components may also be combined in separate chambers. As described above, one or more cover plates may comprise individual cover stacks for each processing region. For example, as shown, processing system 300 may include a first cover plate 305, which may be or include any aspect of the cover plate 158 described above. For example, the first cover plate 305 may be a single cover plate that can be mounted on a transfer area housing or a chamber body as previously described. The first cover plate may be mounted on the housing along a first surface of the cover plate. Cover plate 305 may define a plurality of orifices 306 through the cover plate, thereby allowing vertical translation of a substrate to the defined processing region as previously described.

[0057] Multiple cover plates 310, as previously described, are disposed on a first cover plate 305. In some embodiments, the first cover plate 305 may define a recessed boss as previously described, the recessed boss extending from a second surface of the first cover plate 305 opposite to a first surface. The recessed boss may extend around each of a plurality of orifices 306. Each individual cover stack 310 may be disposed on a separate recessed boss, or may be disposed over a non-recessed orifice as illustrated. The plurality of cover stacks 310 may include a number of cover stacks equal to the number of orifices through which the plurality of orifices are defined by the first cover plate. The cover stacks may at least partially define a plurality of processing regions perpendicularly offset from the transfer regions described above. Although an orifice 306 and a cover stack 310 are illustrated and will be discussed further below, it should be understood that the processing system 300 may include any number of cover stacks having similar or previously discussed components in combination with the system in the embodiments covered by this technology. The following description can be applied to any number of cover stacks or system components.

[0058] In embodiments, the cover stack may include any number of components and may include any of the components described above. Additionally, in some embodiments of this technology, a panel 315 may be incorporated, comprising multiple plates, and in some embodiments, some components of the cover stack may be avoided. For example, in some embodiments of this technology, the gas chamber and baffle plate may be removed. The panel 315 may be mounted on an isolator 320, which electrically insulates the panel from other chamber or housing components. Additionally, a dielectric plate 322 may be mounted on the isolator 320, which protects the panel, as will be discussed further below. Additional spacers 325 may be included, although in some embodiments, a pumping liner as discussed above may also be included in this location. A substrate may be mounted on a base 330, which may at least partially define the processing area having the panel 315.

[0059] A second cover plate 335 may extend over cover plate 310. Embodiments of this technology may include a single second cover plate extending over all cover stacks, or may include individual second cover plates, each covering a corresponding cover stack. The second cover plate 335 may extend entirely over each cover stack of the processing system and may provide access to individual processing areas via a plurality of orifices defined through the second cover plate 335. Each orifice provides a fluid inlet to an individual cover stack. The orifices defined through the second cover plate may include orifices providing delivery of one or more precursors, and orifices 337 providing an inlet for RF feedthrough 340. The RF feedthrough may facilitate the operation of panel 315 as a plasma generating electrode within the system, which may allow plasma to be formed by one or more materials within the processing area. Because the panel may operate as a plasma generating electrode, isolators 345 made of any number of insulating or dielectric materials may be positioned between panel 315 and second cover plate 335. In some embodiments, a cover stack housing 350 may be included, which may operate as a heat exchanger for fluid transport around the cover stack, or the cover stack housing 350 may otherwise extend around the cover stack.

[0060] Panel 315 may include multiple plates coupled together, as will be further described below. Coupling can create one or more flow paths through the panel. As shown, a panel according to some embodiments of the present technology may define an internal volume 355, which may be formed between two or more plates. This volume can be used to provide an internal distribution area for one or more precursors or fluids, as will be explained in more detail below.

[0061] Figure 4 This diagram illustrates a schematic partial cross-sectional view of an exemplary processing system 400 arranged according to some embodiments of the present technology. The diagram may include... Figure 3 The same components, and may include any of the features, components, or characteristics of any component or aspect of any system previously described. Although individual processing areas and cover stack components have been discussed, it should be understood that the same or previously indicated components may be included in any number of processing areas discussed above. Figure 4 A more detailed view of dielectric 322 may be illustrated, and some embodiments of the present technology may incorporate dielectric 322. One or more of the components described in any of the configurations may also be included. For example, a base 330 or substrate support may at least partially define a processing area having a panel 315, which may have any number of orifices or flow channels defined therethrough, as will be described in more detail below. Panel 315 may be mounted on isolator 320, which may be mounted on one or more other components, such as the previously described pumping liner 405.

[0062] Isolator 320 may define a recessed boss 410 extending around the isolator, and dielectric plate 322 may be disposed on the recessed boss 410. Therefore, dielectric plate 322 may be isolated from panel 315, and in some embodiments of the art, the two components may not contact each other. Dielectric plate 322 may define a plurality of apertures 415 extending through the plate, such as more than or about 100, more than 1,000 or about 1,000, more than 5,000 or about 5,000, more than 10,000 or about 10,000 or more. Panel 315 may have a plurality of apertures defined as outlets extending from the panel, the number of which may be equal to or less than the number of apertures through dielectric plate 322. When the number of orifices on the two components is equal, the orifices can be axially aligned between the components to limit the effect on fluid flow through the dielectric 322, although in some embodiments of the art, any amount of offset may also occur between the orifices of the two components.

[0063] By separating the dielectric plate from the panel and other components, the dielectric plate can be thermally floating, which allows for heating of the plate via a substrate support. This allows for more uniform heating of the dielectric plate, which controls heat loss from components and any impact on the delivered precursor. Additionally, in some embodiments, a gap 420 can be maintained between the dielectric plate 322 and the panel 315. This gap can be maintained to prevent plasma generation between the dielectric plate and the panel. In some embodiments, the gap distance can be less than 10 mm or about 10 mm, and can be less than 8 mm or about 8 mm, less than 5 mm or about 5 mm, less than 4 mm or about 4 mm, less than 3 mm or about 3 mm, less than 2 mm or about 2 mm, or even smaller. In some embodiments, by incorporating the dielectric plate into the system, panel degradation can be limited or prevented.

[0064] Figure 5A schematic top view of a cover stack component of an exemplary substrate processing system according to some embodiments of the present technology is shown, and a second cover plate 500 or a portion of a second cover plate 500 may be disposed on one of a plurality of cover stacks. The second cover plate 500 may define one or more orifices through the plate, which may provide inlets for precursor delivery and for RF feedthrough. For example, the second cover plate 500 may define a first orifice 505, which may be centrally located and may allow a feedthrough 510 to extend through the second cover plate to contact a panel or other cover stack component previously described. Additional orifices may be defined to provide fluid inlets to the cover stack, such as fluid inlets to the panel described elsewhere. For example, a first orifice 515 may be provided at a first location on the second cover plate, and a second orifice 520 may be provided at a second location on the cover plate. Both orifices may provide fluid inlets for one or more process gases, fluids, or precursors for semiconductor processing.

[0065] As will be further described below, in some embodiments, the flow paths extending from these orifices may be maintained fluidly isolated in some embodiments of the present technology. Output manifolds may be disposed within orifices passing through the second cover plate 500. A first output manifold 525 may be at least partially located in a first orifice 515 passing through the second cover plate and may be at least partially disposed on the second cover plate as shown. Additionally, a second output manifold 530 may be at least partially located in a second orifice 520 passing through the second cover plate and may also be at least partially disposed on the second cover plate. The output manifolds may be fluidly coupled to one or more precursor delivery sources and may provide fluid inlets from remote plasma sources as described above. In some embodiments, two output manifolds may be fluidly coupled to different fluid delivery sources from each other. Individual remote plasma sources may also be coupled to each output manifold associated with different cover stacks, or one or more remote plasma sources may be coupled to the plurality of output manifolds previously described.

[0066] As previously described, some embodiments of this technology may include a panel that performs the functions of multiple dispensing components. For example, in some embodiments, a panel according to this technology may include multiple plates coupled to each other to define one or more flow paths through the panel. A panel according to this technology may be combined with the systems previously described, and may also be included in a stand-alone system according to some embodiments of this technology, where a single processing area may be used. The panel may be used in etching, deposition, or cleaning operations, as well as any other operations in which enhanced dispensing may be used, as will be described below.

[0067] Figure 6AA schematic top view of a panel 600 according to some embodiments of the present technology is shown, and a first panel of the panel may be illustrated. As shown, the first panel may define a plurality of channels 605 extending across the surface of the panel 600. As shown, the channels 605 may extend from a first location 610, which may correspond to or be adjacent to an aperture through a second cover plate, such as the aperture 515 described above. The channels 605 may extend from location 610 to one or more second locations 615, such as four second locations as shown. The channels may extend around location 620, where an RF feedthrough may be electrically coupled to the previously described panel. At each second location, an aperture (such as a first aperture 617) extending through the panel 600 may be formed, which may provide an inlet to a lower panel and may further define a flow path through the panel.

[0068] As shown in the figures, in some embodiments, a plurality of orifices may be defined at each second location and extend through the plate. The plate 600 may also define a second orifice 625, which may correspond to or be adjacent to an orifice through the second cover plate, such as orifice 520 described above. As shown, orifice 625 may not include a channel and may extend through the panel in a vertical path from the orifice through the second cover plate. Orifice 625 may be maintained separate from channels formed along the surface of the plate 600 and may be isolated from the first location, the channel, and the second location on the plate.

[0069] Figure 6B A schematic bottom view of a panel according to some embodiments of the present technology is shown, and the bottom of the panel 600 can be illustrated. As shown, a second set of channels 630 can be defined in the bottom surface of the panel opposite to the surface forming the first channel. As shown, neither the first nor the second channel extends through the panel, but can be recessed from the surface to provide a flow path, as may also be discussed above. Figure 3 As seen in the figure. Each of the second channels 630 may extend from a first orifice 617 extending through the plate, allowing the distributed fluid to be distributed laterally or radially. As shown, each second channel 630 may extend from the first orifice 617 in at least two directions, wherein the first orifice may be centrally positioned between the second channels. Although each second channel extending from the first orifice in four directions is illustrated, it should be understood that any number of channels may extend in embodiments of this technology.

[0070] Figure 7AA schematic top view of a panel 700 according to some embodiments of the present technology is shown. The panel 700 may define a plurality of orifices through the panel, and may define a larger number of orifices than a first panel. As shown, the panel 700 may define a plurality of first orifices 715 extending through the panel 700. Each first orifice 715 may be positioned adjacent to the end region of each second channel 630 formed on the underside of the overlying first panel. In this way, fluid delivered through the four first orifices of the first panel may extend through the second channels in the first panel and subsequently flow through the eight orifices of the second panel, whereby the fluid may then continue to flow through the panel for distribution. The panel 700 may also define second orifices 725, which, when the panel is coupled in a cover plate, may be axially aligned with second orifices 625 and may continue fluid channels through the panel, fluidly isolated from the extended patterns of the first orifices.

[0071] Figure 7B A schematic bottom view of a panel 700 according to some embodiments of the present technology is shown. Similar to a first panel 600, panel 700 may form recessed channels that extend into a pattern as described above. Panel 700 is also illustrated in how the pattern can be adjusted in the edge region of the panel. While the pattern may continue with the same number of channels extending through the panel from the first aperture, in the edge region, the number of channels may be reduced to any number to accommodate the geometry of the panel. This can also occur to maintain a second aperture as isolated from the flow pattern through the first aperture. For example, as shown, in a set of channels extending from a single first aperture of the first panel 600 to each of four first apertures 715 in the next panel, apertures 715a, 715b, and 715c may each continue with four channels extending from the respective aperture, which can increase flow distribution. However, in the case where aperture 715d may extend through the panel, maintaining the pattern allows the channel to extend through the edge of the panel. Therefore, orifice 715d can extend to a fewer number of channels, such as one channel, two channels, three channels, or any fewer channels than the corresponding orifice. Additionally, in some embodiments, orifice 715d may be characterized by a smaller orifice diameter, fewer orifices, or some combination thereof, extending through the plate, which maintains uniform flow conduction through the plate. In some embodiments, for any orifice that can extend to fewer channels, flow uniformity can be maintained by reducing the orifice diameter.

[0072] In some embodiments of this technology, the plates can be extended to any number of plates to produce a panel. Additionally, in some embodiments, extra flow paths can be accommodated through the panels (such as through a second orifice through each plate). Figure 8AA schematic top view of plate 800 of a panel according to some embodiments of the present technology is shown. According to some embodiments of the present technology, plate 800 may be coupled to any number of other plates to create a panel. For example, as illustrated above with panel 315, plate 800 may be coupled to plate 700, or additional plates may be included between the plates to continue the flow pattern. Therefore, plate 800 may include any number of orifices to accommodate the pattern. Any number of additional plates may be included between a second cover plate and plate 800, and each plate may include a second orifice as previously described, which may create a vertical channel through the plate, said vertical channel being isolated from the recursive flow path through the first orifice.

[0073] The plate 800 can create a volume between itself and the overlying plate, allowing fluid distribution through a second orifice passing through the plate. To create this volume while maintaining fluid isolation between the two flow paths, the plate 800 may include a plurality of tubular extensions 805 extending from the surface of the plate to the overlying plate. The tubular extensions 805 may define a first orifice 810 extending through the plate, which may be sized to receive a first orifice of the overlying plate. Therefore, when the plate 800 is engaged with the overlying plate, the tubular extensions isolate the first orifice to maintain fluid isolation of the flow path through the plate 800. Thus, the overlying plate may not include channels on its lower surface, but alternatively, it may simply maintain the orifice of the plate covering the overlying plate 800, which can then be maintained by the plate 800.

[0074] For example, the plate directly covering plate 800 may have both a first surface and a second surface, such as... Figure 7A The illustrated plate 700 has no defined channels on any surface. Therefore, the plate cannot be used to add recursive patterns, but patterns can be maintained across the plate 800. This then isolates the first orifice and creates a volume around the tubular extension of the plate 800. A precursor, delivered vertically through a second orifice, can then be dispensed across the panel within the defined volume. The plate 800 may then provide a plurality of second orifices 815 that can dispense the dispersed fluid through the remaining layers of the panel. In some embodiments, the edge may extend around the outer edge of the plate to the height of the tubular extension, which maintains the volume within the panel.

[0075] Figure 8BA schematic cross-sectional view of a panel 800 according to some embodiments of the present technology is shown, along with an upper cover plate illustrating the previously described distribution. As shown, the panel 800 may define a plurality of tubular extensions 805 extending from the surfaces of the panel and intersecting panels 820. Each tubular extension 805 may define an orifice 810 extending through the panel 800. Each orifice 810 may be axially aligned with a first orifice 825 through the panel 820, which maintains fluid isolation of fluid distributed through the flow path. Additionally, the panel 820 may define a second orifice 830 that continues a separate flow path extending vertically through the axially aligned second orifice through each panel between the second cover plate and the panel 800. Fluid distributed through the channel formed by the second orifice may then enter the volume formed by the panel 800 and may flow as fully distributed material through the plurality of second orifices 815 into the processing area.

[0076] Figure 9A A schematic top view of a plate 900 of a panel according to some embodiments of the present technology is shown. In some embodiments, plate 900 may be the last plate in a panel and may dispense one or more materials into a processing area. Plate 900 may not include channels defined in the surface of the plate, but may receive fluid dispensed from overlying channels and define orifices for a final recursive increase in orifices. First orifices 910 are shown in grouped outlines, in which overlying plates may engage, and this provides an outlet from channels extending to each first orifice 910. It should be understood that any number of orifices may be included depending on the number of channels formed in the overlying plate as previously described. Plate 900 may also define a plurality of second orifices 915, the number of which may be similar to the number of second orifices in each overlying plate up to plate 800, in which any number of intermediate plates may be included, such as those illustrated in panel 315 described above. Thus, each second orifice 915 may be part of a vertical flow path extending from the internal volume formed by plate 800, and this provides an outlet from the panel. Thus, in some embodiments, a first flow path through the panel can be created through the first orifice of all the plates, the first orifice extending through the tubular extension of the plate 800, and all the second channels formed in each underside of each plate. Additionally, a second flow path through the second orifice of each plate and the volume formed by the plate 800 can be created, which can be fluidly isolated from the first flow path when the plates of the panel are joined or bonded together.

[0077] Figure 9BA schematic cross-sectional view of a panel 900 according to some embodiments of the present technology is shown, illustrating the included contours of the panel. For example, in some embodiments, the panel 900 may include a substantially flat top surface and a bottom surface. Additionally, as shown, in some embodiments, while the top surface may be substantially flat for engagement with an overlying panel, a plurality of recesses may be formed in the bottom surface surrounding each first aperture 910. Although the aperture 915 may extend fully through the panel, a countersunk hole or countersunk profile may be formed around each first aperture 910, which may allow slight accumulation of the delivered material (e.g., before passing through the dielectric plate discussed previously), the countersunk hole or countersunk profile may have different aperture patterns. By providing recesses, a more uniform delivery can pass through the dielectric plate into the processing area.

[0078] Figure 10 A schematic cross-sectional view illustrating an exemplary system 1000 arrangement of an exemplary substrate processing system according to some embodiments of the present technology is shown. System 100 may be similar to or the same as system 300 described above, but may be illustrated for precursor dispensing (instead of) through a second aperture. Figure 3 The figure shows a cross-sectional view of the recursive distribution. As shown, the precursor conveyed through the second cover plate can initially extend through a plurality of individual second orifices, which create vertical channels 1005 through the panel. An inner plate, including tubular extensions or other extensions of a separator plate, can form a volume 1010 at a central location within the panel. Material conveyed through the vertical channels 1005 can then be laterally or radially distributed within the volume 1010. A plurality of second orifices can be formed through the plate, which can be fluidly coupled to axially aligned second orifices of each subsequent plate, and this can create a plurality of vertical channels 1015, thereby providing material distribution from the volume to the processing area. By combining components according to some embodiments of the present technology, improved fluid distribution can be provided while maintaining fluid isolation between flow paths and protecting components within the cover stack.

[0079] In the foregoing description, numerous details have been set forth for purposes of explanation in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with others.

[0080] While several embodiments have been disclosed, those skilled in the art will understand that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, many well-known processes and elements have not been described to avoid unnecessarily obscuring the scope of the invention. Therefore, the above description should not be considered as limiting the scope of the invention. Additionally, methods or processes may be described sequentially or step-by-step, but it should be understood that operations may be performed simultaneously or in a different order than those listed.

[0081] Where a numerical range is provided, it should be understood that, unless the context explicitly specifies otherwise, every intermediate value between the upper and lower limits of this range, up to the smallest fraction of the lower limit unit, is also specifically disclosed. Any narrower range between any stated or unstated intermediate value in the stated range and any other stated or intermediate value in this stated range is covered. The upper and lower limits of those smaller ranges may be independently included in or excluded from the range, and each of these two limits, neither of these limits, or both of these limits being included in said smaller range is also covered in this art, limited by any specifically excluded limit in the stated range. Where the stated range includes one or both of the limits, ranges excluding one or both of the included limits are also included.

[0082] As used herein and in the appended claims, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” include plural references. Thus, for example, a reference to “a plate” includes a plurality of such plates, and a reference to “the orifice” includes one or more orifices and their equivalents known to those skilled in the art, and so on.

[0083] Furthermore, when used in this specification and the appended claims, the terms “comprise(s)”, “comprising”, “contain(s)”, “containing”, “include(s)” and “including” are intended to specify the presence of the stated feature, integer, component or operation, but do not exclude the presence or addition of one or more other features, integers, components, operations, actions or groups.

Claims

1. A substrate processing chamber panel, comprising: A first plate, the first plate defining a first set of channels in a first surface of the first plate, wherein the first set of channels extends from a first position to a plurality of second positions, and wherein each of the plurality of second positions defines at least one first aperture extending through the first plate; A second plate, the second plate being coupled to the first plate at a first surface of the second plate, wherein the second plate defines a plurality of first orifices extending through the second plate, and wherein the total number of orifices defined through the second plate is greater than the total number of orifices defined through the first plate; A third plate, the third plate being coupled to the second plate at a second surface of the second plate, wherein the second surface of the second plate is opposite to the first surface of the second plate, wherein the third plate includes a plurality of tubular extensions extending from the first surface of the third plate toward the second plate defining a volume between the second plate and the third plate, and wherein each extension of the third plate is axially aligned with a corresponding first orifice passing through the second plate. as well as A fourth plate, coupled to the third plate, wherein the fourth plate defines a plurality of first orifices extending through the fourth plate, wherein: The first orifice of the first plate, the first orifice of the second plate, the tubular extension of the third plate, and the first orifice of the fourth plate form at least a portion of a first flow path through the substrate processing chamber panel. The first plate, the second plate, the third plate, and the fourth plate define a second flow path through the substrate processing chamber panel; and The first flow path is fluidly isolated from the second flow path that passes through the thickness of the substrate processing chamber panel.

2. The substrate processing chamber panel of claim 1, wherein the first plate defines a second set of channels in a second surface of the first plate opposite to the first surface of the first plate, and wherein each channel in the second set of channels extends through the first plate from the outlet of a corresponding first aperture of the first aperture.

3. The substrate processing chamber panel of claim 2, wherein each of the second set of channels extends through the first plate from the outlet of the corresponding first aperture along the second surface of the first plate in at least two directions.

4. The substrate processing chamber panel of claim 1, wherein the at least one first aperture at each of the plurality of second locations includes the plurality of first apertures, the plurality of first apertures extending through the first plate at each of the plurality of second locations of the first plate.

5. The substrate processing chamber panel of claim 1, wherein the first plate defines a second aperture extending through the first plate at a third position, wherein the second plate defines a second aperture extending through the second plate, and wherein the second aperture of the second plate is axially aligned with the second aperture of the first plate.

6. The substrate processing chamber panel of claim 5, wherein the coupling of the second plate and the third plate forms an air chamber disposed around the tubular extension of the third plate, wherein the second orifice extending through the second plate and the second orifice extending through the first plate are fluidly coupled to the air chamber.

7. The substrate processing chamber panel of claim 6, wherein the third plate defines a plurality of second apertures extending through the third plate, wherein the fourth plate defines a plurality of second apertures extending through the fourth plate, wherein the plurality of second apertures extending through the third plate and the plurality of second apertures extending through the fourth plate are fluidly coupled to the gas chamber.

8. The substrate processing chamber panel of claim 7, wherein the second hole extending through the second plate, the second hole extending through the first plate, the plurality of second holes extending through the third plate, the plurality of second holes extending through the fourth plate, and the air chamber form the second flow path.

9. A substrate processing system, comprising: A processing chamber that defines a processing area; as well as A panel, the panel being positioned within the processing chamber, wherein the panel comprises: A first plate defines a first set of channels in a first surface of the first plate, wherein the first set of channels extends from a first position to a plurality of second positions, and wherein each of the plurality of second positions defines at least one first aperture extending through the first plate. A second plate, coupled to the first plate at a first surface of the second plate, wherein the second plate defines a plurality of first orifices extending through the second plate, and wherein the total number of orifices defined by the second plate is greater than the total number of orifices defined through the first plate. A third plate, coupled to the second plate at a second surface of the second plate, wherein the second surface of the second plate is opposite to the first surface of the second plate, wherein the third plate includes a plurality of tubular extensions extending from the first surface of the third plate toward the second plate, defining a volume between the second plate and the third plate, and wherein each tubular extension of the third plate is axially aligned with a corresponding first orifice passing through the second plate. A fourth plate, coupled to the third plate, wherein the fourth plate defines a plurality of first orifices extending through the fourth plate, wherein: The first orifice of the first plate, the first orifice of the second plate, the tubular extension of the third plate, and the first orifice of the fourth plate form at least a portion of a first flow path through the substrate processing chamber panel. The first plate, the second plate, the third plate, and the fourth plate define a second flow path through the substrate processing chamber panel; and The first flow path is fluidly isolated from the second flow path that passes through the thickness of the substrate processing chamber panel.

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