Substrate processing apparatus

Abstract

A substrate processing apparatus is provided that concentrates microwave delivery to a substrate. The substrate processing apparatus includes a process chamber that forms an internal space for processing a substrate, a substrate support unit that supports the substrate in the internal space, a dielectric plate that is disposed above the substrate support unit, an antenna unit that is disposed on the dielectric plate and has a frustum shape that includes a through hole, a microwave application unit that applies microwave to the antenna unit, and a slow wave plate that is disposed on the antenna unit.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus. Background Technology

[0002] Plasma is generated through very high temperatures, strong electric fields, or high-frequency electromagnetic fields (RF electromagnetic fields), and refers to an ionized gaseous state composed of ions, electrons, free radicals, etc. In the manufacturing process of semiconductor devices, plasma is used to perform various processes.

[0003] Typically, substrate processing apparatuses that use microwaves to generate plasma transmit microwaves into the interior space of a chamber where the substrate is arranged using antennas and dielectric plates. Summary of the Invention

[0004] Technical problems to be solved

[0005] The technical problem to be solved by the present invention is to provide a substrate processing apparatus for concentrating microwaves to a substrate.

[0006] The purpose of this invention is not limited to the above-described purposes, and other purposes not mentioned will be clearly understood by those skilled in the art through the following description.

[0007] Solution

[0008] An aspect of the substrate processing apparatus of the present invention for solving the above-mentioned technical problems includes: a process chamber forming an internal space for processing a substrate; a substrate support unit supporting the substrate in the internal space; a dielectric plate disposed above the substrate support unit; an antenna unit disposed on the dielectric plate and having a frustoconical shape including a through hole; a microwave application unit applying microwaves to the antenna unit; and a slow-wave plate disposed on the antenna unit.

[0009] The lower end of the antenna element contacts the edge portion of the dielectric plate, and an air gap is included between the antenna element and the dielectric plate.

[0010] The slow-wave plate surrounds the outer surface of the antenna element.

[0011] Antenna elements can have a truncated cone shape.

[0012] The antenna element can have a truncated triangular pyramid shape.

[0013] The antenna element has a first side surface to a third side surface, and the first side surface to the third side surface have the same tilt relative to the upper surface of the dielectric plate.

[0014] The antenna element includes multiple slots formed on the side surface of the antenna element.

[0015] The cross-section of the antenna element taken in a direction perpendicular to the upper surface of the dielectric plate has a trapezoidal shape.

[0016] The cross-section of the antenna element, taken in a direction parallel to the upper surface of the dielectric plate, gradually increases from the upper end to the lower end of the antenna element.

[0017] Another aspect of the substrate processing apparatus of the present invention for solving the aforementioned other technical problem includes: a process chamber forming an internal space for processing a substrate; a substrate support unit supporting the substrate in the internal space; a dielectric plate disposed above the substrate support unit; an antenna unit disposed on the dielectric plate and including a side surface inclined relative to the upper surface of the dielectric plate; and a microwave application unit applying microwaves to the antenna unit, wherein an upper end of the antenna unit is connected to a lower end of the microwave application unit, a lower end of the side surface of the antenna unit contacts an edge portion of the dielectric plate, and the cross-section of the lower end of the antenna unit is larger than the cross-section of the upper end of the antenna unit.

[0018] The inclined side surface is connected to the dielectric plate at an angle of less than 90 degrees relative to the upper surface of the dielectric plate.

[0019] A through hole is formed between the upper end and the lower end of the antenna element.

[0020] The substrate processing apparatus also includes a slow-wave plate, which is arranged on the antenna unit and surrounds the inclined side surface.

[0021] The cross-section of the antenna element taken in a direction perpendicular to the upper surface of the dielectric plate has a trapezoidal shape.

[0022] An air gap is also included between the antenna unit and the dielectric plate.

[0023] Another aspect of the substrate processing apparatus of the present invention for solving the aforementioned other technical problem includes: a process chamber forming an internal space for processing a substrate; a substrate support unit supporting the substrate in the internal space; a dielectric plate disposed above the substrate support unit; an antenna unit disposed on the dielectric plate and having a side surface inclined relative to the upper surface of the dielectric plate; and a microwave application unit applying microwaves to the antenna unit, wherein the cross-section of the antenna unit has a trapezoidal shape in a direction perpendicular to the upper surface of the dielectric plate.

[0024] The antenna element includes multiple slots formed on the inclined side surface.

[0025] The substrate processing apparatus also includes a slow-wave plate, which is arranged on the antenna unit and surrounds the inclined side surface.

[0026] The cross-section of the antenna element, taken in a direction parallel to the upper surface of the dielectric plate, gradually increases from the upper end to the lower end of the antenna element.

[0027] An air gap is also included between the antenna unit and the dielectric plate.

[0028] Specific details of other embodiments are included in the detailed description and accompanying drawings. Attached Figure Description

[0029] Figure 1 This is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0030] Figure 2 This is a diagram illustrating an antenna of a substrate processing apparatus according to an embodiment of the present invention.

[0031] Figure 3 This is a diagram illustrating a substrate processing method using a substrate processing apparatus according to an embodiment of the present invention.

[0032] Figure 4 This is a plan view of the antenna and substrate of a substrate processing apparatus according to an embodiment of the present invention.

[0033] Figure 5 This is a diagram illustrating an antenna of a substrate processing apparatus according to another embodiment of the present invention.

[0034] Figure 6 This is a diagram illustrating an antenna of a substrate processing apparatus according to yet another embodiment of the present invention.

[0035] Figure 7 This is a diagram illustrating an antenna of a substrate processing apparatus according to yet another embodiment of the present invention.

[0036] Explanation of reference numerals in the attached figures

[0037] 10: Substrate processing apparatus

[0038] 500: Antenna

[0039] 600: Slow Wave Plate

[0040] 700: Dielectric plate Detailed Implementation

[0041] Preferred embodiments of the invention will be described in detail below with reference to the accompanying drawings. The advantages and features of the invention, as well as the methods of achieving these advantages and features, will become apparent from the embodiments described in detail below in conjunction with the accompanying drawings. However, the invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and these embodiments are provided only to complete the disclosure of the invention and to fully inform those skilled in the art of the scope of the invention, and the invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0042] When an element or layer is referred to as being "above" or "on top of" another element or layer, it includes not only being directly above the other element or layer, but also the case where another layer or element is intervening in between. Conversely, when an element is referred to as being "directly above" or "right above," it indicates that there is no other element or layer intervening in between.

[0043] Spatial relative terms such as “below,” “under,” “lower,” “above,” and “upper” can be used to describe the relationship between one element or component and other elements or components as shown in the figure. Spatial relative terms should be understood to include terms indicating different orientations of the element during use or operation, in addition to those shown in the figure. For example, in the case where the element shown in the figure is flipped, an element described as “below” or “under” another element can be positioned “above” another element. Therefore, the exemplary term “below” can include both lower and upper orientations. Element can also be oriented in other directions, and therefore spatial relative terms can be interpreted according to orientation.

[0044] Although terms such as "first," "second," etc., are used to describe various elements, constituent elements, and / or parts, it is clear that these elements, constituent elements, and / or parts are not limited by these terms. These terms are used only to distinguish one element, constituent element, or part from other elements, constituent elements, or parts. Therefore, within the technical concept of this invention, the first element, first constituent element, or first part mentioned below can obviously also be a second element, second constituent element, or second part.

[0045] The terminology used in this specification is for describing embodiments and is not intended to limit the invention. In this specification, the singular form also includes the plural form unless otherwise specified in the sentence. The terms "comprises" and / or "comprising" as used in this specification mean including the mentioned constituent elements, steps, operations, and / or components, without excluding the presence or addition of more than one other constituent element, step, operation, and / or component.

[0046] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) are to be understood in the sense that would be commonly understood by one of ordinary skill in the art to which this invention pertains. Furthermore, unless explicitly defined otherwise, terms defined in commonly used dictionaries should not be interpreted in an idealized or excessive manner.

[0047] In the following description, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, the same or corresponding constituent elements will be given the same reference numerals, regardless of the drawing numbers, and repeated descriptions thereof will be omitted.

[0048] Figure 1 This is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention. Figure 2 This is a diagram illustrating an antenna of a substrate processing apparatus according to an embodiment of the present invention.

[0049] Reference Figure 1 and Figure 2 The substrate processing apparatus 10 includes a process chamber 100, a substrate support unit 200, a gas supply unit 300, a microwave application unit 400, an antenna unit 500, a slow wave plate 600, and a dielectric plate 700.

[0050] A processing space 101 is formed inside the process chamber 100, and the processing space 101 is arranged as a space for performing processing processes on the substrate W. The process chamber 100 includes a body 110 and a cover 120. The upper surface of the body 110 is open, and a space is formed therein. The cover 120 is located at the upper end of the body 110 and seals the open upper surface of the body 110. The inner side of the lower end of the cover 120 has a stepped portion, such that the radius of the upper space of the cover 120 is larger than the radius of the lower space of the cover 120.

[0051] An exhaust port 102 can be formed on the bottom surface of the process chamber 100. The exhaust port 102 is connected to an exhaust line 131. Through the exhaust of the exhaust line 131, the interior of the process chamber 100 can maintain a pressure lower than atmospheric pressure. In addition, reaction byproducts generated during the process and gases remaining inside the process chamber 100 can be discharged to the outside through the exhaust line 131.

[0052] Although not in Figure 1 As shown in the diagram, a substrate inlet / outlet can be formed on one side wall of the process chamber 100. The substrate inlet / outlet can be opened and closed via a door.

[0053] The substrate support unit 200 supports the substrate W inside the processing space 101. The substrate support unit 200 includes a support plate 210, a heater 220, and a support shaft 230.

[0054] The support plate 210 is arranged as a disk having a predetermined thickness and a radius greater than that of the substrate W. The substrate W is placed on the upper surface of the support plate 210. According to an embodiment, the support plate 210 does not have a structure for fixing the substrate W, and the substrate W is provided in a state of being placed on the upper surface of the support plate 210 for processing. In contrast, the support plate 210 may be provided as an electrostatic chuck for fixing the substrate W using electrostatic force, or as a clamping member for fixing the substrate W by mechanical clamping.

[0055] Multiple lifting pins are arranged, and each lifting pin is located in a pin hole (not shown) formed in the support plate 210. The lifting pins can move up and down along the pin holes, and can load the substrate W onto the support plate 210 or unload the substrate W from the support plate 210.

[0056] Heater 220 is disposed inside support plate 210. Heater 220 is arranged as a spiral coil and embedded inside support plate 210 at uniform intervals. Heater 220 is connected to an external power source (not shown) and generates heat by resisting current applied from the external power source. The generated heat is transferred through support plate 210 to substrate W and heats substrate W to a predetermined temperature.

[0057] The support shaft 230 is located below the support plate 210 and supports the support plate 210.

[0058] Gas supply unit 300 supplies process gas to processing space 101. Although in Figure 1 Although not shown, the gas supply unit 300 may include a gas storage section, a valve, and a gas supply line. The valve can open and close the gas supply line and regulate the supply flow rate of the process gas. The gas supply unit can supply the process gas stored in the gas storage section to the interior of the process chamber through gas supply holes 105 formed on the side wall of the process chamber and the gas supply line. Multiple gas supply holes 105 may be arranged.

[0059] The microwave application unit 400 applies microwaves to the antenna unit 500. The microwave application unit 400 includes a microwave generator 410, a first waveguide 420, a second waveguide 430, a phase converter 440, and a matching network 450.

[0060] Microwave generator 410 generates microwaves required to excite the process gas into a plasma state.

[0061] The first waveguide 420 is connected to the microwave generator 410, and a channel is formed inside the first waveguide 420. The microwaves generated by the microwave generator 410 are transmitted along the first waveguide 420 to the phase converter 440.

[0062] The second waveguide 430 includes an outer conductor 432 and an inner conductor 434.

[0063] An outer conductor 432 extends vertically downward from the end of the first waveguide 420 and forms a channel therein. The upper end of the outer conductor 432 is connected to the lower end of the first waveguide 420, and the lower end of the outer conductor 432 is connected to the upper end of the cover 120.

[0064] An inner conductor 434 is located within an outer conductor 432. The inner conductor 434 is arranged as a cylindrical rod, and its length direction is arranged parallel to the vertical direction. The upper end of the inner conductor 434 is inserted into and fixed to the lower end of the phase converter 440. The inner conductor 434 extends downwards, with its lower end located inside the process chamber 100. The lower end of the inner conductor 434 is fixedly connected to the center of the antenna element 500. Specifically, the lower end of the inner conductor 434 is connected to the upper end 500_top of the antenna element. The inner conductor 434 can be formed by sequentially coating a first coating and a second coating onto a rod made of copper. According to one embodiment, the first coating can be made of nickel (Ni), and the second coating can be made of gold (Au). Microwaves propagate primarily to the antenna element 500 through the first coating.

[0065] Microwaves whose phase is changed by phase converter 440 are transmitted to antenna element 500 along second waveguide 430.

[0066] A phase converter 440 is positioned at the junction of the first waveguide 420 and the second waveguide 430, and changes the phase of the microwaves. The phase converter 440 may be arranged in a pointed, tapered shape. The phase converter 440 propagates the microwaves transmitted from the first waveguide 420 to the second waveguide 430 in the converted mode. The phase converter 440 can convert the microwaves from a transverse electric (TE) mode to a transverse electromagnetic (TEM) mode.

[0067] A matching network 450 is arranged on the first waveguide 420. The matching network 450 matches the microwaves propagating through the first waveguide 420 to a predetermined frequency.

[0068] Antenna element 500 can be arranged above substrate support unit 200 and dielectric plate 700, opposite to support plate 210. The upper end 500_top of antenna element can be connected to the inner conductor 434 of second waveguide 430. Specifically, the upper end 500_top of antenna element can surround the inner conductor 434, and the lower end of the inner conductor 434 can be inserted into a hole formed by the upper end 500_top of antenna element. The lower end 500_bottom of antenna element can contact the edge portion of the upper surface of dielectric plate 700.

[0069] Antenna element 500 can be formed in a truncated cone shape. For example, antenna element 500 can have a thin truncated cone shape. The upper end 500_top of the antenna element is not sharp, but is a cross-section that cuts the cone shape in the middle, which can have a flat circular shape.

[0070] The radius of the lower end 500_bottom of the antenna element is larger than the radius of the upper end 500_top of the antenna element. Specifically, the cross-sectional area gradually increases from the upper end 500_top to the lower end 500_bottom of the antenna element. Therefore, the side surface 520 of the antenna element 500 connecting the upper end 500_top and the lower end 500_bottom of the antenna element can be connected to the upper surface of the dielectric plate 700 at a specific angle θ. That is, the antenna element 500 can be plate-shaped and not arranged parallel to the upper surface of the dielectric plate 700, but with an angle. The specific angle formed between the side surface 520 of the antenna element 500 and the upper surface of the dielectric plate 700 can be varied according to the embodiment.

[0071] The side surface 520 of the antenna element 500 can be arranged at an angle relative to the upper surface of the dielectric plate 700. Specifically, the side surface 520 of the antenna element 500 may not be perpendicularly connected to the upper surface of the dielectric plate 700, but may be connected to the upper surface of the dielectric plate 700 at an angle of less than 90 degrees. The cross-section of the antenna element 500, taken perpendicular to the upper surface of the dielectric plate 700, may have a trapezoidal shape.

[0072] Antenna element 500 may have a through hole formed between the upper end 500_top and the lower end 500_bottom of antenna element, and antenna element 500 may have a truncated cone shape formed by bending a thin plate.

[0073] Multiple slots 510 can be formed on the side surface 520 of the antenna element 500. For example, the multiple slots 510 can be evenly distributed on the side surface 520 of the antenna element 500. Alternatively, on the side surface 520 of the antenna element 500, the multiple slots 510 can be arranged more densely closer to the upper end 500_top of the antenna element, while they can be arranged further apart from each other closer to the lower end 500_bottom of the antenna element. The multiple slots 510 can be arranged in a "+" shape or an "x" shape. However, the embodiment is not limited to this, and the shape and arrangement of the slots 510 can be changed in various ways.

[0074] A slow-wave plate 600 is located above the antenna element 500 and is arranged as a disk with a predetermined thickness. The slow-wave plate 600 may have a radius corresponding to the inner side of the cover 120. The slow-wave plate 600 is formed of a dielectric such as alumina or quartz. Microwaves propagating vertically through the internal conductor 434 propagate radially along the slow-wave plate 600. The wavelength of the microwaves propagating to the slow-wave plate 600 is compressed, thus causing resonance. The slow-wave plate 600 may contact the upper surface of the antenna element 500. Specifically, the lower surface of the slow-wave plate 600 may surround the outer side surface of the antenna element 500.

[0075] The dielectric plate 700 can be located below the antenna element 500 and can be arranged as a disk with a predetermined thickness. The dielectric plate 700 can be formed of a dielectric such as alumina or quartz. The bottom surface of the dielectric plate 700 can be arranged as a concave surface recessed inward. The bottom surface of the dielectric plate 700 can be located at the same height as the lower end of the cover 120. The side of the dielectric plate 700 has a stepped portion, such that the middle portion has a larger radius than the upper and lower ends. The lower surface of the middle portion of the dielectric plate 700 can be arranged at the lower end of the cover 120 with the stepped portion. The radius of the lower end of the dielectric plate 700 can be smaller than the radius of the lower end of the cover 120, and can maintain a predetermined distance from the lower end of the cover 120. Microwaves are radiated through the dielectric plate 700 into the processing space 101 of the process chamber 100.

[0076] An air gap AG can be formed between the antenna element 500 and the dielectric plate 700. Specifically, the antenna element 500 and the dielectric plate 700 may not be in complete contact, thereby forming a space between the lower part of the antenna element 500 and the upper part of the dielectric plate 700.

[0077] Figure 3 This is a diagram illustrating a substrate processing method using a substrate processing apparatus according to an embodiment of the present invention. Figure 4 This is a plan view of the antenna and substrate of a substrate processing apparatus according to an embodiment of the present invention.

[0078] Reference Figure 3 and Figure 4 The antenna element 500 can be arranged overlapping the substrate W above it. Specifically, the cross-sectional area of ​​the upper end 500_top of the antenna element can be smaller than the cross-sectional area of ​​the substrate W, and the cross-sectional area of ​​the lower end 500_bottom of the antenna element can be larger than the cross-sectional area of ​​the substrate W.

[0079] Microwaves passing through the antenna element 500, which has a truncated cone shape, are not transmitted perpendicularly to the substrate W, but are instead bent as they pass through the side surface 520 of the antenna element 500. That is, microwaves transmitted through the side surface 520 of the antenna element 500, which is arranged at a specific angle θ relative to the substrate W rather than parallel to the substrate W, can be concentrated and transmitted to the substrate W.

[0080] Figure 5 This is a diagram illustrating an antenna of a substrate processing apparatus according to another embodiment of the present invention. Figure 6 This is a diagram illustrating an antenna of a substrate processing apparatus according to yet another embodiment of the present invention. Figure 7 This is a diagram illustrating an antenna of a substrate processing apparatus according to yet another embodiment of the present invention. For ease of description, the main description will be based on references. Figure 2 The differences lie in the content described.

[0081] Reference Figure 5 The antenna element 500 may have a triangular pyramid shape. Specifically, the antenna element 500 may have a first side surface 501 to a third side surface 503. The first side surface 501 to the third side surface 503 may have a first angle θ1 to a third angle θ3 relative to the upper surface of the dielectric plate 700. For example, the first angle θ1 to the third angle θ3 may all be the same. As another example, the first angle θ1 to the third angle θ3 may be different from each other. The first side surface 501 to the third side surface 503 may be connected to the upper surface of the dielectric plate 700 at an acute angle of less than 90 degrees, rather than being connected perpendicularly to the upper surface of the dielectric plate 700.

[0082] The first side surface 501 to the third side surface 503 can have a trapezoidal shape.

[0083] The upper end 500_top and the lower end 500_bottom of the antenna element can have a triangular shape. Therefore, the cross-section of the lower end of the internal conductor 434 connected to the upper end 500_top of the antenna element can also have a triangular shape. The triangular cross-section of the lower end 500_bottom of the antenna element is larger than the cross-section of the substrate W.

[0084] The slow-wave plate 600 disposed above the antenna element 500 can surround the first side surface 501 to the third side surface 503 of the antenna element 500. That is, the slow-wave plate 600 can conformally contact the first side surface 501 to the third side surface 503 of the antenna element 500.

[0085] Reference Figure 6 Antenna element 500 may have a truncated dome shape with the top of a hemisphere cut off. In this case, the upper end 500_top and the lower end 500_bottom of the antenna element may be circular. The cross-section taken parallel to the upper surface of the dielectric plate 700 gradually increases from the upper end 500_top to the lower end 500_bottom of the antenna element. The cross-section of the lower end 500_bottom of the antenna element is larger than the cross-section of the substrate W.

[0086] Reference Figure 7The antenna element 500 may have a truncated pyramid shape with the top of the pyramid cut off. In this case, the upper end 500_top and the lower end 500_bottom of the antenna element may have a rectangular shape. The antenna element 500 may have a first side surface to a fourth side surface. The first side surface to the fourth side surface may have a specific angle relative to the upper surface of the dielectric plate 700. The first side surface to the fourth side surface may be connected to the edge portion of the upper surface of the dielectric plate 700 in an inclined shape relative to the upper surface of the dielectric plate 700.

[0087] The rectangle of the cross-section, which is taken parallel to the upper surface of the dielectric plate 700, gradually increases in size from the upper end 500_top of the antenna element to the lower end 500_bottom of the antenna element.

[0088] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, those skilled in the art should understand that the present invention can be implemented in other specific forms without changing its technical concept or essential features. Therefore, the above embodiments should be understood as exemplary in all respects, and not restrictive.

Claims

1. A substrate processing apparatus, comprising: Process chambers form internal spaces for processing substrates; A substrate support unit supports the substrate in the internal space; A dielectric plate is arranged above the substrate support unit; The antenna element is arranged on the dielectric plate and has a truncated cone shape including through holes; A microwave application unit applies microwaves to the antenna unit; as well as Slow-wave plate, arranged on the antenna element, The antenna element includes a plurality of slots formed on its side surface. The slots are arranged more densely closer to the upper end of the antenna element, and more widely spaced closer to the lower end. An air gap is included between the antenna element and the dielectric plate. The air gap is shaped like a truncated cone.

2. The substrate processing apparatus according to claim 1, wherein, The lower end of the antenna element contacts the edge portion of the dielectric plate.

3. The substrate processing apparatus according to claim 1, wherein, The slow-wave plate surrounds the outer surface of the antenna element.

4. The substrate processing apparatus according to claim 1, wherein, The antenna element has a truncated conical shape.

5. The substrate processing apparatus according to claim 1, wherein, The antenna element has a truncated triangular pyramid shape.

6. The substrate processing apparatus according to claim 1, wherein, The antenna element has a first side surface to a third side surface, and The first side surface to the third side surface have the same inclination relative to the upper surface of the dielectric plate.

7. The substrate processing apparatus according to claim 1, wherein, The antenna element has a trapezoidal cross-section when cut in a direction perpendicular to the upper surface of the dielectric plate.

8. The substrate processing apparatus according to claim 1, wherein, The cross-section of the antenna element, taken in a direction parallel to the upper surface of the dielectric plate, gradually increases from the upper end to the lower end of the antenna element.

9. A substrate processing apparatus, comprising: Process chambers form internal spaces for processing substrates; A substrate support unit supports the substrate in the internal space; A dielectric plate is arranged above the substrate support unit; An antenna element is disposed on the dielectric plate and includes a side surface that is inclined relative to the upper surface of the dielectric plate; as well as The microwave application unit applies microwaves to the antenna unit. The upper end of the antenna element is connected to the lower end of the microwave application unit. The lower end of the side surface of the antenna element contacts the edge portion of the dielectric plate, and In a direction parallel to the upper surface of the dielectric plate, the cross-section of the lower end of the antenna element is larger than the cross-section of the upper end of the antenna element. The antenna element includes a plurality of slots formed on its side surface. The slots are arranged more densely closer to the upper end of the antenna element, and more widely spaced closer to the lower end. An air gap is included between the antenna element and the dielectric plate. The air gap is shaped like a truncated cone.

10. The substrate processing apparatus according to claim 9, wherein, The inclined side surface is connected to the dielectric plate at an angle of less than 90 degrees relative to the upper surface of the dielectric plate.

11. The substrate processing apparatus according to claim 9, wherein, A through hole is included between the upper end and the lower end of the antenna element.

12. The substrate processing apparatus according to claim 9, further comprising: A slow-wave plate is arranged on the antenna element and around the inclined side surface.

13. The substrate processing apparatus according to claim 9, wherein, The antenna element has a trapezoidal cross-section when cut in a direction perpendicular to the upper surface of the dielectric plate.

14. A substrate processing apparatus, comprising: Process chambers form internal spaces for processing substrates; A substrate support unit supports the substrate in the internal space; A dielectric plate is arranged above the substrate support unit; An antenna element is disposed on the dielectric plate and includes a side surface that is inclined relative to the upper surface of the dielectric plate; as well as The microwave application unit applies microwaves to the antenna unit. The antenna element has a trapezoidal cross-section taken in a direction perpendicular to the upper surface of the dielectric plate. The antenna element has a plurality of slots formed on the inclined side surface. The slots are arranged more densely closer to the upper end of the antenna element, and more widely spaced closer to the lower end. An air gap is included between the antenna element and the dielectric plate. The air gap is shaped like a truncated cone.

15. The substrate processing apparatus according to claim 14, further comprising: A slow-wave plate is arranged on the antenna element and around the inclined side surface.

16. The substrate processing apparatus according to claim 14, wherein, The cross-section of the antenna element, taken in a direction parallel to the upper surface of the dielectric plate, gradually increases from the upper end to the lower end of the antenna element.

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