Conductive structure and method of manufacturing the same

CN116153779BActive Publication Date: 2026-10-30INTERFACE OPTOELECTRONICS (SHENZHEN) CO LTD +2
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Patent Information

Application Number
CN202310197325.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-03-03
Publication Date
2026-10-30
Estimated Expiration
2043-03-03

AI Technical Summary

Technical Problem

[0003]然而,现行的导电线路的制造方法已经无法满足上述需求

Benefits of technology

[0025]综上所述,在本揭露的导电结构及其制造方法中,通过光敏感黏着层将导电层贴合于基板上,在去除导电层的部位而形成导电线路后再将光敏感黏着层的部位去除,以维持基板的高穿透率以及低雾度的性质。在本揭露的导电结构及其制造方法中,通过将光敏感黏着层作为贴合导电层的材料而非使用例如一般黏着胶(例如,环氧树酯或丙烯酸树酯等)材料,可以避免在形成透光区时无法去除黏着胶材料。在本揭露的导电结构及其制造方法中,由于使用经加工后具有第一表面以及第二表面的电解铜箔作为导电层(导电线路)的材料,且导电层的第二表面与光敏感黏着层接触,可以增进导电层与光敏感黏着层之间的附着力以避免导电层在工艺中剥落。

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Abstract

A conductive structure includes a substrate, a photosensitive adhesive layer, and a conductive layer. The photosensitive adhesive layer is disposed on the substrate and has a first opening. The conductive layer is disposed on the photosensitive adhesive layer and has a second opening. The second opening is aligned with the first opening in a direction perpendicular to an upper surface of the substrate. A footprint of the second opening on the upper surface of the substrate is a light transmission region. The conductive structure of the present disclosure can maintain high transmittance and low haze properties of the substrate.
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Description

Technical Field

[0001] This disclosure relates to a conductive structure and a method for manufacturing the same, and more particularly to a method for manufacturing a conductive circuit. Background Technology

[0002] The requirements for conductive lines in transparent display panels include a high linewidth ratio (i.e., fine lines) in the conductive patterns and high transparency (i.e., light transmittance) and low haze in the light-transmitting substrate. Current transparent display panels typically use methods such as copper etching, catalyst copper plating, or seed layer copper plating to form the conductive lines. In some common manufacturing methods, adhesives (e.g., epoxy resins) are also used to bond the conductive lines to the light-transmitting substrate.

[0003] However, current methods for manufacturing conductive lines are no longer sufficient to meet these requirements. For example, isotropic etching patterning of copper films often results in trapezoidal cross-sections rather than the ideal rectangles; electroplating copper can lead to uneven thickness when forming thick copper films; and using adhesives to bond conductive lines to the light-transmitting substrate can degrade the substrate's transmittance and increase haze due to the adhesive's inability to be removed. These limitations of the manufacturing methods all affect the quality of transparent display panels.

[0004] Therefore, how to propose a conductive structure and its manufacturing method that can solve the above problems is one of the issues that the industry is currently eager to invest research and development resources to address. Summary of the Invention

[0005] In view of this, one objective of this disclosure is to propose a conductive structure and a method for manufacturing the above-mentioned problems.

[0006] To achieve the above objectives, according to one embodiment of this disclosure, a conductive structure includes a substrate, a photosensitive adhesive layer, and a conductive layer. The photosensitive adhesive layer is disposed on the substrate and has a first cutout. The conductive layer is disposed on the photosensitive adhesive layer and has a second cutout. The second cutout and the first cutout are aligned in a direction perpendicular to the upper surface of the substrate. The orthographic projection area of ​​the second cutout on the upper surface of the substrate is a light-transmitting area.

[0007] In one or more embodiments disclosed herein, the conductive layer has a first surface and a second surface with different roughness. The second surface contacts the photosensitive adhesive layer, and the first surface is located on the side of the conductive layer away from the photosensitive adhesive layer.

[0008] In one or more embodiments disclosed herein, the roughness of the second surface is greater than the roughness of the first surface.

[0009] In one or more embodiments disclosed herein, the conductive layer is made of a metallic material, and the conductive layer is made of copper.

[0010] In one or more embodiments disclosed herein, the thickness of the conductive layer is between 8 micrometers and 35 micrometers.

[0011] In one or more embodiments disclosed herein, the width of the conductive layer is less than 50 micrometers.

[0012] In one or more embodiments disclosed herein, the photosensitive adhesive layer is a positive photoresist.

[0013] In one or more embodiments disclosed herein, the thickness of the photosensitive adhesive layer is between 2 micrometers and 10 micrometers.

[0014] In one or more embodiments disclosed herein, the substrate material comprises polyethylene terephthalate (PET), cyclic olefin polymer (COP), or transparent polyimide (CPI).

[0015] In one or more embodiments disclosed herein, when viewed from the conductive layer toward the substrate, the light transmittance of the light-transmitting area is greater than 90 percent.

[0016] In one or more embodiments disclosed herein, the haze of the light-transmitting area is less than 2 percent when viewed from the conductive layer toward the substrate.

[0017] According to one embodiment of the present disclosure, a method for manufacturing a conductive structure includes: sequentially forming a photosensitive adhesive layer, a conductive layer, a photosensitive sacrificial layer, and a photomask layer on a substrate, wherein the photosensitive adhesive layer is formed between the conductive layer and the substrate, the photosensitive sacrificial layer is formed on the conductive layer, the photomask layer is formed on the photosensitive sacrificial layer, and the substrate material is a transparent and colorless light-transmitting material; removing portions of the photosensitive sacrificial layer located below the photomask layer to form a plurality of first cutouts in the photosensitive sacrificial layer; removing portions of the conductive layer to form a plurality of second cutouts in the conductive layer using the first cutouts; removing portions of the photosensitive adhesive layer to form a plurality of third cutouts in the photosensitive adhesive layer using the second cutouts; and removing the photosensitive sacrificial layer.

[0018] In one or more embodiments disclosed herein, the step of removing portions of the conductive layer results in the remaining portion of the conductive layer having a width between 25 micrometers and 50 micrometers.

[0019] In one or more embodiments disclosed herein, the step of removing the portion of the photosensitive sacrificial layer located beneath the photomask layer exposes the upper surface of the conductive layer.

[0020] In one or more embodiments disclosed herein, the step of removing the portion of the conductive layer exposes the upper surface of the photosensitive adhesive layer.

[0021] In one or more embodiments disclosed herein, the step of removing the portion of the photosensitive adhesive layer exposes the upper surface of the substrate.

[0022] In one or more embodiments disclosed herein, the cutout portions of the photosensitive adhesive layer and the conductive layer are aligned in a direction perpendicular to the upper surface of the substrate.

[0023] In one or more embodiments disclosed herein, the photosensitive adhesive layer is a positive photoresist, which can photodecompose the photosensitizer and cleave crosslinks when exposed to light, and the resin becomes easier to remove in an alkaline solution.

[0024] In one or more embodiments disclosed herein, the thickness of the photosensitive adhesive layer is between 2 micrometers and 10 micrometers, and the thickness of the photosensitive sacrificial layer is between 5 micrometers and 20 micrometers.

[0025] In summary, in the conductive structure and manufacturing method disclosed herein, a conductive layer is bonded to a substrate using a photosensitive adhesive layer. After forming conductive lines at the locations where the conductive layer is removed, the photosensitive adhesive layer is then removed again, thus maintaining the substrate's high transmittance and low haze properties. In this conductive structure and manufacturing method, by using a photosensitive adhesive layer as the bonding material for the conductive layer instead of using general adhesives (e.g., epoxy resins or acrylic resins), the inability to remove the adhesive material during the formation of the light-transmitting area can be avoided. In this conductive structure and manufacturing method, since electrolytic copper foil with a first and second surface after processing is used as the material for the conductive layer (conductive lines), and the second surface of the conductive layer is in contact with the photosensitive adhesive layer, the adhesion between the conductive layer and the photosensitive adhesive layer can be improved, preventing the conductive layer from peeling off during the process.

[0026] The above description is only used to illustrate the problem to be solved by this disclosure, the technical means to solve the problem, and the effects produced, etc. The specific details of this disclosure will be described in detail in the following implementation method and related drawings. Attached Figure Description

[0027] To make the above and other objects, features, advantages and embodiments disclosed herein more apparent and understandable, the accompanying drawings are described below:

[0028] Figure 1 A flowchart illustrating a method for manufacturing a conductive structure according to an embodiment of the present disclosure is shown.

[0029] Figure 2 A continuation of an embodiment according to this disclosure is illustrated. Figure 1 A flowchart of the manufacturing method of the conductive structure.

[0030] Figure 3 A schematic diagram illustrating an intermediate stage in the fabrication of a conductive structure according to one embodiment of the present disclosure is shown.

[0031] Figure 4 A schematic diagram illustrating an intermediate stage in the fabrication of a conductive structure according to one embodiment of the present disclosure is shown.

[0032] Figure 5 A schematic diagram illustrating an intermediate stage in the fabrication of a conductive structure according to one embodiment of the present disclosure is shown.

[0033] Figure 6 A schematic diagram illustrating an intermediate stage in the fabrication of a conductive structure according to one embodiment of the present disclosure is shown.

[0034] Figure 7 A schematic diagram illustrating an intermediate stage in the fabrication of a conductive structure according to one embodiment of the present disclosure is shown.

[0035] Figure 8 A schematic diagram illustrating an intermediate stage in the fabrication of a conductive structure according to one embodiment of the present disclosure is shown.

[0036] Figure 9 A schematic diagram illustrating an intermediate stage in the fabrication of a conductive structure according to one embodiment of the present disclosure is shown.

[0037] Figure 10 A schematic diagram illustrating an intermediate stage in the fabrication of a conductive structure according to one embodiment of the present disclosure is shown.

[0038] Figure label:

[0039] 100: Conductive structure

[0040] 110: Substrate

[0041] 110a, 120a, 140a: Upper surface

[0042] 120: Photosensitive adhesive layer

[0043] 122, 132, 142: Location

[0044] 130: Conductive layer

[0045] 130a: First surface

[0046] 130b: Second surface

[0047] 140: Photosensitive sacrificial layer

[0048] 150: Photomask layer

[0049] E1, E2: Exposure process

[0050] L: Light

[0051] M: Method

[0052] NTA: Non-transparent area

[0053] O 120 O 130 O 140 Hollowed-out section

[0054] S101, S102, S103, S104, S105, S106, S107, S108: Steps

[0055] T 120 ,T 130 ,T 140 :thickness

[0056] TA: Translucent area

[0057] W 130 :width

[0058] X, Z: Direction Detailed Implementation

[0059] The following describes several embodiments of this disclosure with reference to the accompanying drawings. For clarity, many practical details will be described in the following description. However, it should be understood that these practical details should not be used to limit this disclosure. That is, these practical details are not essential in some embodiments of this disclosure. Furthermore, for the sake of simplicity, some conventional structures and components will be shown in the drawings in a simple schematic manner. The same reference numerals will be used to denote the same or similar components in all the drawings.

[0060] The following will describe in detail the structure, function, and connection relationship between the components of the conductive structure disclosed herein, and will also describe in detail the method for manufacturing the conductive structure disclosed herein.

[0061] Figure 1 as well as Figure 2 It is a method for manufacturing such as according to one or more embodiments of this disclosure. Figure 10 A flowchart of the manufacturing method M of the conductive structure 100 shown. Figure 1 as well as Figure 2 As shown, method M includes steps S101 to S108. In some embodiments, Figure 2 Step S105 system connection Figure 1 Step S104. When describing steps S101 to S108 below, please also refer to... Figures 3 to 10 To gain the best understanding of this disclosure.

[0062] Step S101: Form a photosensitive adhesive layer 120 on the substrate 110.

[0063] Please refer to Figure 3 . Figure 3A substrate 110 is provided. In this embodiment, the substrate 110 is configured as a light-transmitting substrate to allow light emitted by a light-emitting unit (e.g., a light-emitting diode (LED)) to pass through. Figure 3 As shown, a photosensitive adhesive layer 120 is formed on the surface of the substrate 110. Specifically, the photosensitive adhesive layer 120 can be attached to the substrate 110.

[0064] In some embodiments, the material of substrate 110 may comprise polyethylene terephthalate (PET), cyclic olefin polymer (COP), transparent polyimide (CPI), or any suitable material. Therefore, in some embodiments, substrate 110 is a light-transmitting material. Alternatively, in some embodiments, substrate 110 is transparent and colorless. In some embodiments, substrate 110 may be a flexible substrate. However, this disclosure is not intended to limit the material of substrate 110.

[0065] In some embodiments, the light transmittance of substrate 110 is greater than 90%. In some embodiments, the haze of substrate 110 is less than 2%.

[0066] In some implementations, the photosensitive adhesive layer 120 may be a positive photoresist.

[0067] Step S102: Form a conductive layer 130 on the photosensitive adhesive layer 120.

[0068] Please continue to refer to this. Figure 3 .like Figure 3 As shown, the conductive layer 130 is disposed on the photosensitive adhesive layer 120. In this embodiment, the conductive layer 130 is configured as follows: Figure 10 The conductive lines in the conductive structure 100 shown will be patterned by the conductive layer 130 to form these conductive lines, as will be explained in detail in the subsequent steps. In some embodiments, the conductive layer 130 may be attached to the photosensitive adhesive layer 120. For example... Figure 3As shown, the conductive layer 130 has a first surface 130a (i.e., the upper surface of the conductive layer 130) and a second surface 130b (i.e., the lower surface of the conductive layer 130), and the first surface 130a and the second surface 130b are located on opposite sides of the conductive layer 130. In some embodiments, the second surface 130b contacts the photosensitive adhesive layer 120, and the first surface 130a is located on the side of the conductive layer 130 away from the photosensitive adhesive layer 120. In some embodiments, the roughness of the second surface 130b is greater than the roughness of the first surface 130a. In embodiments where the roughness of the second surface 130b is greater than the roughness of the first surface 130a, since the second surface 130b of the conductive layer 130 is in contact with the surface of the photosensitive adhesive layer 120 (e.g., ...), ... Figure 3 As shown, this can improve the adhesion between the conductive layer 130 and the photosensitive adhesive layer 120.

[0069] In some embodiments, the conductive layer 130 is made of a metallic material. In some embodiments, the conductive layer 130 is made of copper (Cu). In some embodiments, the conductive layer 130 is made of electrolytic copper foil. In embodiments where the conductive layer 130 is electrolytic copper foil, the conductive layer 130 has two surfaces with different properties, a first surface 130a and a second surface 130b, because the conductive layer 130 is formed by continuously depositing copper foil through, for example, a rotating cathode roller. The first surface 130a is the outer side of the conductive layer 130 (i.e., the side away from the cathode roller), and the second surface 130b (also called the deposited surface) is the inner side of the conductive layer 130 (i.e., the side in contact with the cathode roller).

[0070] Step S103: Form a photosensitive sacrificial layer 140 on the conductive layer 130.

[0071] Please refer to Figure 4 .like Figure 4 As shown, a photosensitive sacrificial layer 140 is disposed on the conductive layer 130. In this embodiment, the photosensitive sacrificial layer 140 is configured to be used in a subsequent step to pattern the conductive layer 130. In some embodiments, the photosensitive sacrificial layer 140 may be attached to the conductive layer 130. For example... Figure 4 As shown, the photosensitive sacrificial layer 140 has an exposed upper surface 140a.

[0072] In some implementations, such as Figure 4 As shown, the photosensitive adhesive layer 120 has a thickness T 120 In some implementations, the thickness T 120 Between 2 micrometers and 10 micrometers.

[0073] In some implementations, the thickness T 120It can be 10 micrometers. In some implementations, the thickness T 120 The preferred thickness is 5 micrometers. In some embodiments, the thickness T... 120 The optimal thickness is 2 micrometers. If the thickness T... 120 If the thickness is less than 2 micrometers, it may cause problems with easy peeling during subsequent assembly. If the thickness T 120 If the size is larger than 10 micrometers, it may lead to unnecessary waste.

[0074] In some implementations, such as Figure 4 As shown, the conductive layer 130 has a thickness T 130 In some implementations, the thickness T 130 Between 8 micrometers and 35 micrometers. If the thickness T 130 If the diameter is greater than 35 micrometers, it is easy to produce an undercut effect during subsequent patterning (e.g., isotropic etching), which will result in unsatisfactory conductive lines.

[0075] In some implementations, such as Figure 4 As shown, the photosensitive sacrificial layer 140 has a thickness T 140 In some implementations, the thickness T 140 Between 5 micrometers and 20 micrometers.

[0076] In some implementations, such as Figure 4 As shown, the photosensitive adhesive layer 120, the conductive layer 130, and the photosensitive sacrificial layer 140 are sequentially formed on the substrate 110. The substrate 110, the photosensitive adhesive layer 120, the conductive layer 130, and the photosensitive sacrificial layer 140 all extend at least in the horizontal direction (e.g., direction X) and are arranged in the vertical direction (e.g., direction Z).

[0077] Step S104: Form a photomask layer 150 on the photosensitive sacrificial layer 140.

[0078] Please refer to Figure 5 .like Figure 5 As shown, a photomask layer 150 is disposed on the upper surface 140a of the photosensitive sacrificial layer 140, and the substrate 110, photosensitive adhesive layer 120, conductive layer 130, photosensitive sacrificial layer 140, and photomask layer 150 are formed sequentially. In this embodiment, the photomask layer 150 is a patterned photomask. Figure 5As shown, since the photomask layer 150 is a patterned photomask, a portion of the upper surface 140a of the photosensitive sacrificial layer 140 is exposed. In some embodiments, the photosensitive sacrificial layer 140 includes a portion 142 located directly beneath the photomask layer 150. Specifically, the portion 142 is located directly beneath the solid portion of the photomask layer 150, rather than directly beneath the cutout portion of the photomask layer 150.

[0079] In some embodiments, the photomask layer 150 may be a glass substrate photomask or a polyethylene terephthalate (PET) substrate photomask.

[0080] Step S105: Remove portion 142 of the photosensitive sacrificial layer 140 located below the photomask layer 150 to form a cutout portion O. 140 Located below photomask layer 150.

[0081] Please continue to refer to this. Figure 5 .like Figure 5 As shown, the portion 142 of the photosensitive sacrificial layer 140 located beneath the photomask layer 150 can be removed, for example, by a lithography process. First, an exposure process E1 is performed on the photosensitive sacrificial layer 140 using a patterned photomask layer 150. More specifically, the exposed portion of the photosensitive sacrificial layer 140 is exposed to the exposure process E1 and cross-linked, thereby exhibiting high resistance to chemical etching, while the portion 142 of the photosensitive sacrificial layer 140 located directly beneath the photomask layer 150 is not exposed to the exposure process E1. Next, please refer to... Figure 6 .like Figure 6 As shown, after the photosensitive sacrificial layer 140 is exposed by exposure process E1, the photomask layer 150 is removed from the upper surface 140a of the photosensitive sacrificial layer 140. Next, a negative developer is applied to the photosensitive sacrificial layer 140. Since the portion 142 of the photosensitive sacrificial layer 140 has not undergone sufficient cross-linking and curing, the negative developer removes the portion 142, thereby forming the cutout O in situ. 140 .like Figure 6 As shown, the hollowed-out part O 140 Located on and penetrating the photosensitive sacrificial layer 140, and with a hollowed-out portion O 140 Located below the photomask layer 150. In some embodiments, removing portion 142 of the photosensitive sacrificial layer 140 exposes the first surface 130a of the conductive layer 130.

[0082] In some implementations, the photosensitive sacrificial layer 140 may be a negative photoresist.

[0083] Step S106: Remove portion 132 of the conductive layer 130 to form the cutout portion O. 130 On conductive layer 130.

[0084] Please refer to Figure 6 as well as Figure 7 .like Figure 6 as well as Figure 7 As shown, the conductive layer 130 can be patterned by removing portions 132 of the conductive layer 130 using, for example, an isotropic etching process. More specifically, as... Figure 6 As shown, portion 132 of the conductive layer 130 is located in the cutout portion O. 140 Directly below. When isotropic etching is performed on the conductive layer 130, portion 132 is removed, thereby forming the cutout portion O in situ. 130 .like Figure 7 As shown, the hollowed-out part O 130 Located on and penetrating the conductive layer 130. In some embodiments, the portion 132 of the conductive layer 130 is removed, exposing the upper surface 120a of the photosensitive adhesive layer 120. By performing step S106, a layer such as... Figure 10 The conductive structure 100 shown has several conductive lines.

[0085] like Figure 7 As shown, a plurality of conductive lines can be formed via the patterned conductive layer 130. In some embodiments, one of the plurality of conductive lines has a width W. 130 In some implementations, the width W 130 It can guide the wire width of the electrical circuit. In some implementations, the width W 130 Less than 50 micrometers. In some implementations, the width W 130 Between 25 and 50 micrometers. If the width W 130 If the area is greater than 50 micrometers, the light transmittance of the conductive structure 100 may not meet the requirements because the area occupied by the conductive lines is too large.

[0086] In some embodiments, the isotropic etching process described above can be, for example, wet etching. However, this disclosure is not intended to limit the method of removing the portion 132 of the conductive layer 130.

[0087] Step S107: Remove portion 122 of the photosensitive adhesive layer 120 to form the cutout portion O. 120 Photosensitive adhesive layer 120.

[0088] Please refer to Figure 8 .like Figure 8As shown, the portion 122 of the photosensitive adhesive layer 120 can be removed, for example, by a lithography process. First, an exposure process E2 is performed on the photosensitive adhesive layer 120 using a patterned conductive layer 130 and a photosensitive sacrificial layer 140. More specifically, the portion 122 of the photosensitive adhesive layer 120 undergoes a chemical reaction (e.g., cleavage of crosslinks) during exposure in the exposure process E2, thereby exhibiting low resistance to chemical etching (i.e., easily etched), and is not located in the cutout portion O. 130 The portion of the photosensitive adhesive layer 120 directly beneath it is not exposed during the E2 exposure process. Next, please refer to... Figure 9 .like Figure 9 As shown, after the photosensitive adhesive layer 120 is exposed by exposure process E2, a positive developer is applied to the photosensitive adhesive layer 120. Since the cross-linking (chain breakage) of the portion 122 of the photosensitive adhesive layer 120 is severed by exposure process E2, the positive developer removes the portion 122, thereby forming the cutout portion O in situ. 120 .like Figure 9 As shown, the hollowed-out part O 120 Located on and penetrating the photosensitive adhesive layer 120, with a cutout portion O 120 Located in the hollowed-out part O 130 Directly below. In some embodiments, removing portion 122 of the photosensitive adhesive layer 120 exposes the upper surface 110a of the substrate 110.

[0089] In some embodiments, the cutout portion O of the photosensitive adhesive layer 120 120 The hollowed-out portion O of the conductive layer 130 130 The cutout portion O of the photosensitive sacrificial layer 140 140 Alignment in a direction perpendicular to the upper surface 110a of the substrate 110 (e.g., direction Z).

[0090] Step S108: Remove the photosensitive sacrificial layer 140.

[0091] Please refer to Figure 10 .like Figure 10 As shown, the photosensitive sacrificial layer 140 is removed from the conductive layer 130, thereby forming the conductive structure 100. Figure 10 As shown, the cutout portion O of the photosensitive adhesive layer 120 120 With the hollowed-out portion O of the conductive layer 130 130 Alignment is performed in a direction perpendicular to the upper surface 110a of the substrate 110 (e.g., direction Z). In this embodiment, the cutout portion O... 130 The orthographic region on the upper surface 110a of the substrate 110 is the light-transmitting region TA. In other words, the area located in the cutout portion O of the substrate 110...130 The portion directly below (i.e., the area where conductive lines do not pass through) defines the light-transmitting region TA of the conductive structure 100. Conversely, the portion of the substrate 110 located directly below the conductive layer 130 (i.e., the area where conductive lines pass through) defines the opaque region NTA of the conductive structure 100. The light-transmitting region TA is configured to allow light L to pass through in a direction perpendicular to the upper surface 110a of the substrate 110 (e.g., direction Z).

[0092] By sequentially performing steps S101 to S108 of method M, the manufacturer can produce a conductive structure 100 with a highly transparent and low-haze light-transmitting region TA. The conductive structure 100 and its manufacturing method M disclosed herein offer many advantages. For example... Figure 10 As shown, since the photosensitive adhesive layer 120 is a photoresistor, the transmittance of light L in the light-transmitting region TA of the conductive structure 100 after performing method M is almost unaffected. In other words, when viewed by an observer from the conductive layer 130 toward the substrate 110, the light transmittance of light L is greater than 90%. Furthermore, the haze of the substrate 110 after performing method M is still less than 2%. In other words, when viewed by an observer from the conductive layer 130 toward the substrate 110, the haze of light L is less than 2%. In addition, the manufacturing method M of the conductive structure 100 can be applied to conductive lines with high linewidth ratios, maintaining not only the high transparency and low haze characteristics of the substrate 110 but also preserving the quality of the conductive lines formed by the conductive layer 130.

[0093] From the detailed description of the specific embodiments disclosed above, it is evident that in the conductive structure and manufacturing method disclosed herein, a conductive layer is bonded to the substrate using a photoresist layer. After forming conductive lines at the locations where the conductive layer is removed, the photoresist layer is then removed again to maintain the substrate's high transmittance and low haze properties. In the conductive structure and manufacturing method disclosed herein, by using a photoresist layer as the bonding material for the conductive layer instead of using materials such as general adhesives (e.g., epoxy resin or acrylic resin), the inability to remove the adhesive material when forming the light-transmitting area can be avoided. In the conductive structure and manufacturing method disclosed herein, since electrolytic copper foil with a first and second surface after processing is used as the material for the conductive layer (conductive line), and the second surface of the conductive layer is in contact with the photoresist layer, the adhesion between the conductive layer and the photoresist layer can be improved to prevent the conductive layer from peeling off during the process.

[0094] Although the present disclosure has been described above with reference to embodiments, it is not intended to limit the present disclosure. Any person skilled in the art may make various modifications and refinements without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure shall be determined by the appended claims.

Claims

1. A conductive structure, characterized in that, Include: substrate; A photosensitive adhesive layer is disposed on the substrate and has a first cutout portion; and A conductive layer is disposed on the photosensitive adhesive layer and has a second cutout portion, wherein the second cutout portion and the first cutout portion are aligned in a direction perpendicular to the upper surface of the substrate. The second cutout portion has a light-transmitting area in the orthographic projection region on the upper surface of the substrate. The conductive layer has a first surface and a second surface with different roughness, wherein the second surface contacts the photosensitive adhesive layer, and the first surface is located on the side of the conductive layer away from the photosensitive adhesive layer. The roughness of the second surface is greater than that of the first surface.

2. The conductive structure according to claim 1, characterized in that, The conductive layer is made of copper.

3. The conductive structure according to claim 1, characterized in that, The thickness of the conductive layer is between 8 micrometers and 35 micrometers.

4. The conductive structure according to claim 1, characterized in that, One of the multiple conductive lines in the conductive layer has a width of less than 50 micrometers.

5. The conductive structure according to claim 1, characterized in that, The photosensitive adhesive layer is a positive photoresist.

6. The conductive structure according to claim 1, characterized in that, The thickness of the photosensitive adhesive layer is between 2 micrometers and 10 micrometers.

7. The conductive structure according to claim 1, characterized in that, The substrate is made of polyethylene terephthalate (PET), cyclic olefin polymer (COP), or transparent polyimide (CPI).

8. The conductive structure according to claim 1, characterized in that, Viewed from the conductive layer toward the substrate, the light transmittance of the light-transmitting area is greater than 90%.

9. The conductive structure according to claim 1, characterized in that, Viewed from the conductive layer toward the substrate, the haze of the light-transmitting area is less than 2 percent.

10. A method for manufacturing a conductive structure, characterized in that, Include: A photosensitive adhesive layer, a conductive layer, a photosensitive sacrificial layer, and a photomask layer are sequentially formed on a substrate, wherein the photosensitive adhesive layer is formed between the conductive layer and the substrate, the photosensitive sacrificial layer is formed on the conductive layer, the photomask layer is formed on the photosensitive sacrificial layer, and the substrate is made of a transparent and colorless light-transmitting material. Remove the portion of the photosensitive sacrificial layer located below the photomask layer to form a plurality of first cutouts in the photosensitive sacrificial layer; The conductive layer is removed from the portion to form a plurality of second cutouts in the conductive layer using the plurality of first cutouts; An exposure process is performed on the photosensitive adhesive layer using the patterned conductive layer and the photosensitive sacrificial layer, and a developer is applied to the photosensitive adhesive layer to remove portions of the photosensitive adhesive layer, so as to form a plurality of third cutouts in the photosensitive adhesive layer using the plurality of second cutouts; as well as Remove the photosensitive sacrificial layer.

11. The method according to claim 10, characterized in that, The step of removing the portion of the conductive layer results in the remaining portion of the conductive layer having a width between 25 micrometers and 50 micrometers.

12. The method according to claim 10, characterized in that, The step of removing the portion of the photosensitive sacrificial layer located beneath the photomask layer exposes the upper surface of the conductive layer.

13. The method according to claim 10, characterized in that, The step of removing the portion of the conductive layer exposes the upper surface of the photosensitive adhesive layer.

14. The method according to claim 10, characterized in that, The step of removing the portion of the photosensitive adhesive layer exposes the upper surface of the substrate.

15. The method according to claim 14, characterized in that, The plurality of third cutouts and the plurality of second cutouts are aligned in a direction perpendicular to the upper surface of the substrate.

16. The method according to claim 10, characterized in that, The photosensitive adhesive layer is a positive photoresist.

17. The method according to claim 10, characterized in that, The thickness of the photosensitive adhesive layer is between 2 micrometers and 10 micrometers, and the thickness of the photosensitive sacrificial layer is between 5 micrometers and 20 micrometers.

Citation Information

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