Wet etching apparatus and control method for wet etching

Abstract

The present disclosure provides a kind of wet etching device and the control method of wet etching, belong to the field of optoelectronic manufacturing technology.The wet etching device includes: etching groove, hydrogen ion concentration detector, first pipeline, first electric control valve and controller;The hydrogen ion concentration detector is located in the etching groove, one end of the first pipeline is communicated with the etching groove, the first electric control valve is connected on the first pipeline, and the first pipeline is used to transport acid liquid into the etching groove;The controller is electrically connected with the hydrogen ion concentration detector and the first electric control valve respectively, and the controller is configured to control the first electric control valve to be conducted when the hydrogen ion concentration detected by the hydrogen ion concentration detector is lower than the preset threshold value.The present disclosure can keep the etching speed consistent during the wet etching process, and improve the stability of the luminous flux parameter of the light emitting diode.

Description

Technical Field

[0001] This disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a wet etching apparatus and a wet etching control method. Background Technology

[0002] Light-emitting diodes (LEDs) are highly influential new products in the optoelectronics industry. They are characterized by their small size, long lifespan, rich and varied colors, and low energy consumption, and are widely used in lighting, displays, signal lights, backlights, toys, and other fields. The core structure of an LED is an epitaxial wafer, and the fabrication of the epitaxial wafer has a significant impact on the photoelectric characteristics of the LED.

[0003] In related technologies, light-emitting diodes typically consist of a substrate and an epitaxial layer stacked sequentially. To improve current spreading, an indium tin oxide (ITO) film is usually fabricated on the surface of the epitaxial layer. To prepare the ITO film, an ITO film is typically deposited first by vapor deposition, followed by wet etching to obtain the ITO film of the desired specifications.

[0004] However, the hydrogen ions in the acid solution used for etching are gradually consumed during the etching process. Therefore, the hydrogen ion concentration in the acid solution gradually decreases during etching, leading to a decrease in the etching rate of wet etching and consequently affecting the etching linewidth. This affects the area of ​​the etched ITO film remaining on the epitaxial layer, and different ITO film areas affect the luminous flux parameters of the light-emitting diode (LED). Therefore, the luminous flux parameters of LEDs etched by wet etching are less stable. Summary of the Invention

[0005] This disclosure provides a wet etching apparatus and a wet etching control method, which can maintain a consistent etching rate during the wet etching process and improve the stability of the luminous flux parameters of light-emitting diodes. The technical solution is as follows:

[0006] This disclosure provides a wet etching apparatus, comprising: an etching tank, a hydrogen ion concentration detector, a first pipe, a first electrically controlled valve, and a controller; the hydrogen ion concentration detector is located inside the etching tank, one end of the first pipe is connected to the etching tank, the first electrically controlled valve is connected to the first pipe, and the first pipe is used to deliver acid solution into the etching tank; the controller is electrically connected to the hydrogen ion concentration detector and the first electrically controlled valve, and the controller is configured to control the first electrically controlled valve to open when the hydrogen ion concentration detected by the hydrogen ion concentration detector is lower than a preset threshold.

[0007] In another implementation of this disclosure, the controller is further configured to determine the preset threshold based on the correspondence between the etching linewidth and the hydrogen ion concentration, and the target etching linewidth of the light-emitting diode.

[0008] In another implementation of this disclosure, the controller is further configured to determine the current hydrogen ion concentration of the acid to be injected based on the correspondence between the etching duration and the hydrogen ion concentration of the acid, and the etching duration of the acid to be injected, wherein the etching duration is the usage time before the acid is injected into the etching tank; and to determine the amount of acid to be replenished based on the current hydrogen ion concentration and the preset threshold.

[0009] In another implementation of the present disclosure, the wet etching apparatus further includes an infrared film thickness detector, which is electrically connected to the controller. The infrared film thickness detector is used to detect the ITO film thickness before and after etching the light-emitting diode. The controller is also used to determine the etching rate of the ITO film based on the ITO film thickness before and after etching.

[0010] This disclosure provides a wet etching control method. The wet etching apparatus further includes a second pipe and a second electrically controlled valve. One end of the second pipe is connected to the etching tank, and the second electrically controlled valve is connected to the second pipe. The second pipe is used to deliver acid solution into the etching tank.

[0011] In another implementation of the present disclosure, the wet etching apparatus further includes a third pipe, a heater, a circulating pump, and a collection tank. One end of the third pipe is connected to the etching tank, and the other end of the third pipe is connected to the collection tank. The collection tank is connected to the etching tank, and the heater and the circulating pump are connected to the third pipe.

[0012] In another implementation of the present disclosure, the wet etching apparatus further includes a fourth pipe and a drain valve, one end of the fourth pipe being connected to the etching tank, and the drain valve being connected to the fourth pipe.

[0013] This disclosure provides a wet etching control method, which is implemented by the wet etching apparatus as described above, including: acquiring the hydrogen ion concentration in the etching tank; and controlling a first electrically controlled valve to open when the hydrogen ion concentration is lower than a preset threshold.

[0014] In another implementation of this disclosure, before obtaining the hydrogen ion concentration in the etching tank, the control method further includes: obtaining the target etching linewidth of the light-emitting diode; and determining the preset threshold based on the correspondence between the etching linewidth and the hydrogen ion concentration.

[0015] In another implementation of this disclosure, after determining the preset threshold based on the correspondence between etching linewidth and hydrogen ion concentration, the control method further includes: obtaining the etching duration of the acid to be injected; determining the current hydrogen ion concentration of the acid to be injected based on the correspondence between the etching duration and the hydrogen ion concentration of the acid, wherein the etching duration is the usage time before the acid is injected into the etching tank; determining the acid replenishment amount based on the current hydrogen ion concentration and the preset threshold; controlling the first electrically controlled valve to open; and delivering the acid replenishment amount to the etching tank so that the hydrogen ion concentration of the acid in the etching tank reaches the preset threshold.

[0016] The beneficial effects of the technical solutions provided in this disclosure include at least the following:

[0017] The wet etching apparatus provided in this embodiment includes an etching tank, a hydrogen ion concentration detector, a first pipe, a first electrically controlled valve, and a controller. The hydrogen ion concentration detector is installed inside the etching tank to detect the hydrogen ion concentration within it. The first pipe is used to supply acid to the etching tank, and its opening and closing are controlled by the first electrically controlled valve to control whether acid is supplied to the etching tank. The controller acquires the hydrogen ion concentration detected by the hydrogen ion concentration detector and, when the hydrogen ion concentration is lower than a preset threshold for the acid, controls the first electrically controlled valve to open, replenishing hydrogen ions into the etching tank to ensure the hydrogen ion concentration does not fall below the preset threshold. This method of monitoring the hydrogen ion concentration in the etching tank and automatically replenishing acid when the concentration decreases ensures a consistent hydrogen ion concentration in the acid, avoiding differences in corrosion rate during wet etching. This allows the wet etching linewidth to meet the set requirements, resulting in an ITO film of the designed area and ensuring the stability of the luminous flux parameters of the light-emitting diode after wet etching. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the structure of a wet etching apparatus provided in an embodiment of this disclosure;

[0020] Figure 2 This is a schematic diagram illustrating the correspondence between etching linewidth and hydrogen ion concentration provided in an embodiment of this disclosure;

[0021] Figure 3This is a schematic diagram illustrating the relationship between etching time and hydrogen ion concentration provided in an embodiment of this disclosure;

[0022] Figure 4 This is a flowchart of a wet etching control method provided in an embodiment of this disclosure;

[0023] Figure 5 This is a schematic diagram of a wet etching control device provided in an embodiment of this disclosure;

[0024] Figure 6 This is a structural block diagram of a computer device provided in an embodiment of this disclosure.

[0025] The markings in the diagram are explained as follows:

[0026] 10. Etching grooves;

[0027] 21. Hydrogen ion concentration detector; 22. Heater; 23. Circulation pump; 24. Collection tank; 25. Drain valve;

[0028] 31. First pipeline; 32. Second pipeline; 33. Third pipeline; 34. Fourth pipeline;

[0029] 41. First electrically controlled valve; 42. Second electrically controlled valve;

[0030] 50. Controller;

[0031] 60. Infrared film thickness detector. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0033] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” “top,” and “bottom,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0034] In related technologies, the acid solution used for wet etching of ITO includes HCl, FeCl3, and H2O. The volume percentage of HCl is 16.5% to 17.5%, the volume percentage of FeCl3 is 22% to 23%, and the balance is water.

[0035] The reaction equations for the etching process are: 6HCl + In2O3 = 2InCl3 + 3H2O; 4HCl + SnO2 = SnCl4 + 2H2O.

[0036] The etching process consumes HCl in the acid solution, thus affecting the pH value of the acid solution and causing FeCl3 to hydrolyze [FeCl3 + 3H2O = Fe(OH)3 + 3HCl]. Therefore, HCl is the main reaction solution in the acid solution, while FeCl3 acts as a buffer.

[0037] During the etching process, the HCl concentration in the acid solution gradually decreases, thus reducing the etching rate and affecting the linewidth of the wet etching. This, in turn, affects the area of ​​the ITO film remaining on the epitaxial layer after etching. Different ITO film areas affect the luminous flux parameters of the light-emitting diode (LED), resulting in poor stability of the luminous flux parameters of the LED after wet etching.

[0038] Figure 1 This is a schematic diagram of a wet etching apparatus provided in an embodiment of this disclosure. Figure 1 As shown, the wet etching apparatus includes: an etching tank 10, a hydrogen ion concentration detector 21, a first pipeline 31, a first electrically controlled valve 41, and a controller 50.

[0039] like Figure 1 As shown, the hydrogen ion concentration detector 21 is located inside the etching tank 10. One end of the first pipe 31 is connected to the etching tank 10. The first electrically controlled valve 41 is connected to the first pipe 31 and is used to control the opening and closing of the first pipe 31. The first pipe 31 is used to deliver acid solution into the etching tank 10.

[0040] The controller 50 is electrically connected to the hydrogen ion concentration detector 21 and the first electrically controlled valve 41. The controller 50 is configured to control the first electrically controlled valve 41 to open when the hydrogen ion concentration detected by the hydrogen ion concentration detector 21 is lower than a preset threshold. That is, if the hydrogen ion concentration is lower than the preset threshold, the first electrically controlled valve 41 is opened to replenish acid into the etching tank, so that the hydrogen ion concentration is restored to the preset threshold.

[0041] The wet etching apparatus provided in this embodiment includes an etching tank, a hydrogen ion concentration detector, a first pipe, a first electrically controlled valve, and a controller. The hydrogen ion concentration detector is installed inside the etching tank to detect the hydrogen ion concentration within it. The first pipe is used to supply acid to the etching tank, and its opening and closing are controlled by the first electrically controlled valve to control whether acid is supplied to the etching tank. The controller acquires the hydrogen ion concentration detected by the hydrogen ion concentration detector and, when the hydrogen ion concentration is lower than a preset threshold for the acid, controls the first electrically controlled valve to open, replenishing hydrogen ions into the etching tank to ensure the hydrogen ion concentration does not fall below the preset threshold. This method of monitoring the hydrogen ion concentration in the etching tank and automatically replenishing acid when the concentration decreases ensures a consistent hydrogen ion concentration in the acid, avoiding differences in corrosion rate during wet etching. This allows the wet etching linewidth to meet the set requirements, resulting in an ITO film of the designed area and ensuring the stability of the luminous flux parameters of the light-emitting diode after wet etching.

[0042] Optionally, the controller 50 is also used to determine a preset threshold based on the correspondence between the etching linewidth and the hydrogen ion concentration, as well as the target etching linewidth of the light-emitting diode.

[0043] In this embodiment of the disclosure, the etching linewidth refers to the dimension in the substrate direction parallel to the light-emitting diode.

[0044] Figure 2 This is a schematic diagram illustrating the correspondence between etching linewidth and hydrogen ion concentration provided in an embodiment of this disclosure. Figure 2 As shown, the etching linewidth is positively correlated with the hydrogen ion concentration; the higher the hydrogen ion concentration, the larger the etching linewidth.

[0045] In this embodiment, the relationship between etching linewidth and hydrogen ion concentration can be obtained through data analysis from a large number of experiments.

[0046] For example, tests were conducted by gradually increasing the hydrogen ion concentration. After the tests were completed, the etching linewidth of the ITO film was measured to obtain a set of data on hydrogen ion concentration and etching linewidth. Then, the average value was calculated through multiple sets of tests to obtain the corresponding relationship between etching linewidth and hydrogen ion concentration.

[0047] The target etching linewidth can be the etching linewidth input by the technician, and the target etching linewidth is the linewidth required by the design of the light-emitting diode.

[0048] When an ITO film with a corresponding linewidth needs to be etched, the technician inputs the target etching linewidth into the controller 50. The controller 50 then obtains the corresponding target hydrogen ion concentration based on the relationship between the etching linewidth and the hydrogen ion concentration. This target hydrogen ion concentration is the preset threshold. Thus, before wet etching, an acid solution with a hydrogen ion concentration at the preset threshold is directly injected into the etching tank 10, ensuring that the etching linewidth meets the set requirements, resulting in an ITO film of the designed area, and guaranteeing the stability of the luminous flux parameters of the light-emitting diode after wet etching.

[0049] Optionally, the controller 50 is also used to determine the current hydrogen ion concentration of the acid to be injected based on the correspondence between the etching time and the hydrogen ion concentration of the acid, as well as the etching time of the acid to be injected.

[0050] The acid replenishment amount is determined based on the hydrogen ion concentration detected by the hydrogen ion concentration detector 21, the current hydrogen ion concentration, and the preset threshold.

[0051] In this embodiment of the disclosure, the etching time is the usage time before the acid is injected into the etching tank 10, that is, the time that has been involved in etching before the acid is injected.

[0052] Figure 3 This is a schematic diagram illustrating the relationship between etching time and hydrogen ion concentration, provided in an embodiment of this disclosure. Figure 3 As shown, etching time is negatively correlated with hydrogen ion concentration; the longer the etching time, the lower the hydrogen ion concentration. This means that the longer the acid solution is used, the fewer hydrogen ions remain in the acid solution.

[0053] In this embodiment of the disclosure, the relationship between etching time and hydrogen ion concentration can be obtained through data analysis from a large number of experiments.

[0054] For example, tests can be conducted by gradually increasing the etching time. After the test, the hydrogen ion concentration in the acid solution is measured to obtain a set of data on hydrogen ion concentration and etching time. Then, the average value is calculated through multiple sets of tests to obtain the correlation between etching time and hydrogen ion concentration.

[0055] The etching time for the acid to be injected can be the etching time input by the technician.

[0056] like Figure 3 As shown, the acid solution to be injected has already undergone 2 hours of etching, so the etching time is 2 hours. Based on the correspondence between etching time and hydrogen ion concentration, it can be seen that the hydrogen ion concentration of the acid solution has decreased from 10% to 9.8% at this time.

[0057] Once the current hydrogen ion concentration of the acid solution is determined, the amount of acid replenishment is calculated based on the difference between the preset threshold and the current hydrogen ion concentration. This ensures that after the acid replenishment amount is injected into the etching tank 10, the hydrogen ion concentration within the etching tank 10 reaches the preset threshold, allowing the wet etching linewidth to meet the set requirements, obtaining the designed area of ​​the ITO film, and ensuring the stability of the luminous flux parameters of the light-emitting diode after wet etching.

[0058] In some other implementations, the acid replenishment amount can be calculated and determined based on the difference between a preset threshold and the hydrogen ion concentration detected by the hydrogen ion concentration detector 21.

[0059] Optionally, such as Figure 1 As shown, the wet etching apparatus also includes an infrared film thickness detector 60, which is electrically connected to the controller 50. The infrared film thickness detector 60 is used to detect the ITO film thickness before and after etching the light-emitting diode. The controller 50 is also used to determine the etching rate of the ITO film based on the ITO film thickness before and after etching.

[0060] By setting up an infrared film thickness detector 60, it is possible to detect whether the ITO film thickness of the light-emitting diode obtained after wet etching meets the design thickness, so that technicians can quickly determine whether the ITO film after wet etching is qualified. At the same time, it can also count the total time of wet etching to calculate and determine the etching rate of the ITO film, which makes it easier for technicians to obtain various parameters of wet etching.

[0061] Optionally, such as Figure 1 As shown, the wet etching apparatus also includes a second pipe 32 and a second electrically controlled valve 42. One end of the second pipe 32 is connected to the etching tank 10, and the second electrically controlled valve 42 is connected to the second pipe 32. The second pipe 32 is used to deliver acid into the etching tank 10. The second pipe 32 is used to deliver acid into the etching tank 10, and the second pipe 32 is controlled by the second electrically controlled valve 42 to control whether acid is delivered to the etching tank 10.

[0062] Optionally, such as Figure 1 As shown, the wet etching apparatus also includes a third pipe 33, a heater 22, a circulating pump 23 and a collection tank 24. One end of the third pipe 33 is connected to the etching tank 10, and the other end of the third pipe 33 is connected to the collection tank 24. The collection tank 24 is connected to the etching tank 10. The heater 22 and the circulating pump 23 are connected to the third pipe 33.

[0063] Heater 22 is provided to heat the acid solution in the etching tank 10 so that the acid solution meets the etching process temperature requirements. After the acid solution is heated by heater 22, it is pumped to collection tank 24 by circulation pump 23. After the acid solution enters collection tank 24, it is injected back into etching tank 10 through electronically controlled valve to realize the recycling of acid solution.

[0064] Optionally, such as Figure 1 As shown, the wet etching apparatus also includes a fourth pipe 34 and a drain valve 25. One end of the fourth pipe 34 is connected to the etching tank 10, and the drain valve 25 is connected to the fourth pipe 34 to control the opening and closing of the fourth pipe 34. The drain valve 25 is provided to facilitate the removal of waste liquid from the etching tank 10.

[0065] The wet etching apparatus provided in this disclosure reduces the acid consumption per wafer from the existing 20ml to 5ml, thereby reducing the cost per wafer and ensuring etching effect, thus stabilizing the product's luminous flux parameters. By using instruments that automatically monitor concentration and film thickness to control and monitor the etching effect and appearance, the consistency of the acid solution ratio at the beginning, middle, and end stages, and the consistency of the etching linewidth of the ITO film, are ensured, thus guaranteeing the stability of the product's luminous flux parameters and improving the product's matching rate. Simultaneously, it also achieves a significant reduction in the material cost per wafer in this process, by up to 75%.

[0066] Figure 4 This is a flowchart of a wet etching control method provided in an embodiment of this disclosure. Figure 4 As shown, this control method is implemented using a wet etching apparatus as described above, including:

[0067] Step 101: Obtain the hydrogen ion concentration in the etching tank.

[0068] Step 102: When the hydrogen ion concentration is lower than the preset threshold, control the first electrically controlled valve to open.

[0069] The wet etching method provided in this embodiment first acquires the hydrogen ion concentration detected by a hydrogen ion concentration detector. When the hydrogen ion concentration is lower than a preset threshold, a first electrically controlled valve is opened to restore the hydrogen ion concentration to the preset threshold. By monitoring the hydrogen ion concentration in the etching tank and automatically replenishing acid when the concentration decreases, the hydrogen ion concentration in the acid within the etching tank remains consistent. This avoids the problem of inconsistent corrosion rates during wet etching, ensuring that the etching linewidth meets the set requirements, resulting in an ITO film of the designed area, and guaranteeing the stability of the luminous flux parameters of the light-emitting diode after wet etching.

[0070] Prior to step 101, the control method further includes the following two steps:

[0071] The first step is to obtain the target etching linewidth of the light-emitting diode.

[0072] The second step is to determine a preset threshold based on the relationship between the etching linewidth and the hydrogen ion concentration.

[0073] like Figure 2 As shown, the etching linewidth is positively correlated with the hydrogen ion concentration; the higher the hydrogen ion concentration, the larger the etching linewidth.

[0074] In this embodiment, the relationship between etching linewidth and hydrogen ion concentration can be obtained through data analysis from a large number of experiments.

[0075] For example, tests were conducted by gradually increasing the hydrogen ion concentration. After the tests were completed, the etching linewidth of the ITO film was measured to obtain a set of data on hydrogen ion concentration and etching linewidth. Then, the average value was calculated through multiple sets of tests to obtain the corresponding relationship between etching linewidth and hydrogen ion concentration.

[0076] The target etching linewidth can be the etching linewidth input by the technician, and the target etching linewidth is the linewidth required by the design of the light-emitting diode.

[0077] When an ITO film with a specific linewidth needs to be etched, the technician inputs the target etching linewidth into the controller. The controller then calculates the corresponding target hydrogen ion concentration based on the relationship between the etching linewidth and the hydrogen ion concentration; this target hydrogen ion concentration is the preset threshold. Before wet etching, an acid solution with the preset hydrogen ion concentration is directly injected into the etching tank, ensuring that the wet etching linewidth meets the set requirements, resulting in an ITO film of the designed area and guaranteeing the stability of the luminous flux parameters of the LED after wet etching.

[0078] The third step is to obtain the etching time of the acid to be injected.

[0079] In this embodiment of the disclosure, the etching time is the usage time before the acid is injected into the etching tank, that is, the time that has been involved in etching before the acid is injected.

[0080] The fourth step is to determine the current hydrogen ion concentration of the acid to be injected based on the correspondence between the etching time and the hydrogen ion concentration of the acid. The etching time is the usage time before the acid is injected into the etching tank.

[0081] like Figure 3 As shown, etching time is negatively correlated with hydrogen ion concentration; the longer the etching time, the lower the hydrogen ion concentration. This means that the longer the acid solution is used, the fewer hydrogen ions remain in the acid solution.

[0082] The fifth step involves determining the acid replenishment amount based on the current hydrogen ion concentration and a preset threshold, controlling the first electrically controlled valve to open, and supplying the acid replenishment amount to the etching tank so that the hydrogen ion concentration of the acid in the etching tank reaches the preset threshold.

[0083] In this embodiment of the disclosure, the relationship between etching time and hydrogen ion concentration can be obtained through data analysis from a large number of experiments.

[0084] For example, tests can be conducted by gradually increasing the etching time. After the test, the hydrogen ion concentration in the acid solution is measured to obtain a set of data on hydrogen ion concentration and etching time. Then, the average value is calculated through multiple sets of tests to obtain the correlation between etching time and hydrogen ion concentration.

[0085] The etching time for the acid to be injected can be the etching time input by the technician.

[0086] like Figure 3 As shown, the acid solution to be injected has already undergone 2 hours of etching, so the etching time is 2 hours. Based on the correspondence between etching time and hydrogen ion concentration, it can be seen that the hydrogen ion concentration of the acid solution has decreased from 10% to 9.8% at this time.

[0087] Once the initial hydrogen ion concentration is determined, the acid replenishment amount is calculated based on the difference between the target hydrogen ion concentration and the initial hydrogen ion concentration. This ensures that after injecting the replenished acid into the etching tank, the hydrogen ion concentration in the etching tank reaches the target hydrogen ion concentration, allowing the wet etching linewidth to meet the set requirements and obtaining the designed area of ​​the ITO film. This ensures the stability of the luminous flux parameters of the light-emitting diode after wet etching.

[0088] Figure 5 This is a schematic diagram of a wet etching control device provided in an embodiment of this disclosure. Figure 5 As shown, the control device includes: an acquisition module 301 for acquiring the hydrogen ion concentration in the etching tank; and a control module 302 for controlling the first electrically controlled valve to open when the hydrogen ion concentration is lower than a preset threshold.

[0089] Optionally, the control device further includes: a determining module 303, wherein the acquiring module 301 is further configured to acquire the target etching linewidth of the light-emitting diode, and the determining module 303 is configured to determine a preset threshold based on the correspondence between the etching linewidth and the hydrogen ion concentration.

[0090] Optionally, the acquisition module 301 is further configured to acquire the etching duration of the acid to be injected; the determination module 303 is further configured to determine the current hydrogen ion concentration of the acid to be injected based on the correspondence between the etching duration and the hydrogen ion concentration of the acid, wherein the etching duration is the usage time before the acid is injected into the etching tank; the control module 302 is further configured to determine the acid replenishment amount based on the current hydrogen ion concentration and a preset threshold, control the first electrically controlled valve to open, and deliver the acid replenishment amount to the etching tank so that the hydrogen ion concentration of the acid in the etching tank reaches the preset threshold.

[0091] Figure 6 This is a structural block diagram of a computer device provided in an embodiment of this disclosure. Figure 6 As shown, the computer device includes a processor 501 and a memory 502.

[0092] Processor 501 may include one or more processing cores, such as a quad-core processor, an octa-core processor, etc. Processor 501 may be implemented using at least one hardware form selected from DSP (Digital Signal Processing), FPGA (Field-Programmable Gate Array), and PLA (Programmable Logic Array). Processor 501 may also include a main processor and a coprocessor. The main processor, also known as a CPU (Central Processing Unit), is used to process data in the wake-up state; the coprocessor is a low-power processor used to process data in the standby state. In some embodiments, processor 501 may integrate a GPU (Graphics Processing Unit), which is responsible for rendering and drawing the content to be displayed on the screen. In some embodiments, processor 501 may also include an AI (Artificial Intelligence) processor, which is used to handle computational operations related to machine learning.

[0093] The memory 502 may include one or more computer-readable storage media, which may be non-transitory. The memory 502 may also include high-speed random access memory and non-volatile memory, such as one or more disk storage devices or flash memory devices. In some embodiments, the non-transitory computer-readable storage media in the memory 502 are used to store at least one instruction, which is executed by the processor 501 to implement the wet etching control method provided in the method embodiments of this application.

[0094] In some embodiments, the computer device may also optionally include: a peripheral device interface 503 and at least one peripheral device. The processor 501, memory 502, and peripheral device interface 503 can be connected via a bus or signal line. Each peripheral device can be connected to the peripheral device interface 503 via a bus, signal line, or circuit board.

[0095] Those skilled in the art will understand that Figure 6 The structure shown does not constitute a limitation on the computer device and may include more or fewer components than shown, or combine certain components, or use different component arrangements.

[0096] This disclosure also provides a non-transitory computer-readable storage medium storing computer instructions for causing a computer to execute the wet etching control method described in the above embodiments. For example, the computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, or optical data storage device.

[0097] Those skilled in the art will understand that all or part of the steps of the above embodiments can be implemented by hardware or by a program instructing related hardware. The program can be stored in a computer-readable storage medium, such as a read-only memory, a disk, or an optical disk.

[0098] The above is not intended to limit this disclosure in any way. Although this disclosure has been disclosed above through embodiments, it is not intended to limit this disclosure. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the technical solution of this disclosure. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this disclosure without departing from the content of the technical solution of this disclosure shall still fall within the scope of the technical solution of this disclosure.

Claims

1. A wet etching apparatus, characterized in that, The wet etching apparatus includes: an etching tank (10), a hydrogen ion concentration detector (21), a first pipeline (31), a first electrically controlled valve (41), and a controller (50). The hydrogen ion concentration detector (21) is located inside the etching tank (10). One end of the first pipe (31) is connected to the etching tank (10). The first electrically controlled valve (41) is connected to the first pipe (31). The first pipe (31) is used to deliver acid solution into the etching tank (10). The controller (50) is electrically connected to the hydrogen ion concentration detector (21) and the first electrically controlled valve (41) respectively. The controller (50) is configured to control the first electrically controlled valve (41) to open when the hydrogen ion concentration detected by the hydrogen ion concentration detector (21) is lower than a preset threshold. The controller (50) is also used to determine the preset threshold based on the correspondence between the etching linewidth and the hydrogen ion concentration, and the target etching linewidth of the light-emitting diode, wherein the etching linewidth is positively correlated with the hydrogen ion concentration.

2. The wet etching apparatus according to claim 1, characterized in that, The controller (50) is also used to determine the current hydrogen ion concentration of the acid to be injected based on the correspondence between the etching time and the hydrogen ion concentration of the acid, as well as the etching time of the acid to be injected, wherein the etching time is the usage time before the acid is injected into the etching tank (10). The amount of acid to be replenished is determined based on the current hydrogen ion concentration and the preset threshold.

3. The wet etching apparatus according to claim 1 or 2, characterized in that, The wet etching apparatus also includes an infrared film thickness detector (60), which is electrically connected to the controller (50). The infrared film thickness detector (60) is used to detect the ITO film thickness before and after etching the light-emitting diode. The controller (50) is also used to determine the etching rate of the ITO film based on the ITO film thickness before and after etching.

4. The wet etching apparatus according to claim 1 or 2, characterized in that, The wet etching apparatus further includes a second pipe (32) and a second electrically controlled valve (42). One end of the second pipe (32) is connected to the etching tank (10), and the second electrically controlled valve (42) is connected to the second pipe (32). The second pipe (32) is used to deliver acid solution into the etching tank (10).

5. The wet etching apparatus according to claim 1 or 2, characterized in that, The wet etching apparatus further includes a third pipe (33), a heater (22), a circulation pump (23), and a collection tank (24). One end of the third pipe (33) is connected to the etching tank (10), and the other end of the third pipe (33) is connected to the collection tank (24). The collection tank (24) is connected to the etching tank (10). The heater (22) and the circulation pump (23) are connected to the third pipe (33).

6. The wet etching apparatus according to claim 1 or 2, characterized in that, The wet etching apparatus further includes a fourth pipe (34) and a drain valve (25). One end of the fourth pipe (34) is connected to the etching tank (10), and the drain valve (25) is connected to the fourth pipe (34).

7. A method for controlling wet etching, characterized in that, The control method is implemented using the wet etching apparatus as described in any one of claims 1 to 6, comprising: Obtain the target etching linewidth for the light-emitting diode; Based on the relationship between etching linewidth and hydrogen ion concentration, the preset threshold is determined, where etching linewidth is positively correlated with hydrogen ion concentration; Obtain the hydrogen ion concentration within the etching tank; When the hydrogen ion concentration is lower than a preset threshold, the first electrically controlled valve is turned on.

8. The control method according to claim 7, characterized in that, After determining the preset threshold based on the correspondence between etching linewidth and hydrogen ion concentration, the control method further includes: Obtain the etching time of the acid to be injected; Based on the correspondence between etching duration and hydrogen ion concentration of acid, the current hydrogen ion concentration of the acid to be injected is determined, wherein the etching duration is the usage time before the acid is injected into the etching tank. Based on the current hydrogen ion concentration and the preset threshold, the acid replenishment amount is determined, and the first electrically controlled valve is opened to deliver the acid replenishment amount to the etching tank, so that the hydrogen ion concentration of the acid in the etching tank reaches the preset threshold.

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