Memory device, memory apparatus, and method of manufacturing memory device
By using finned electrode structures and combined deposition methods, the effective area of memory devices is increased, solving the problems of miniaturization and high integration of memory devices, improving device performance and reducing costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GTA SEMICON CO LTD
- Filing Date
- 2023-02-23
- Publication Date
- 2026-07-31
AI Technical Summary
Increasing the effective area of existing storage devices leads to a larger planar area, making it difficult to achieve miniaturization and high integration, and also increases the difficulty of wiring design and costs.
By employing a finned electrode structure, the effective area of the storage device is increased by forming a combination of finned and layered portions on the electrode portion. The storage material and electrode layer are formed by a combination of atomic layer deposition and physical vapor deposition, ensuring connection reliability and deposition quality.
Without increasing the planar area, improve the sensitivity, stability and reliability of memory devices, extend their lifespan, reduce manufacturing costs, and adapt to semiconductor process compatibility.
Smart Images
Figure CN116157002B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of storage technology, and more specifically, to a storage device, a storage apparatus, and a method for manufacturing the storage device. Background Technology
[0002] Storage devices are devices with memory functions whose electrical states can be controlled to record corresponding data. With the rapid development of information technology, the applications of storage devices are becoming increasingly widespread, and the demands on their performance are also increasing. Therefore, there is a need to improve existing storage devices. Summary of the Invention
[0003] One of the objectives of this disclosure is to provide a storage device and a method for manufacturing a storage device, so as to improve the performance of the storage device by increasing the effective area of the storage device.
[0004] According to a first aspect of this disclosure, a storage device is provided, comprising:
[0005] A first electrode portion, the first electrode portion including one or more fin-shaped portions;
[0006] A storage material section, the storage material section being disposed on the first electrode section, and at least a portion of the storage material section covering the top and side surfaces of each of the one or more fin sections; and
[0007] The second electrode portion is disposed on the storage material portion;
[0008] The first electrode portion, the storage material portion, and the second electrode portion are stacked sequentially.
[0009] In some embodiments, the angle between at least one side surface of at least one fin and the bottom surface is less than or equal to 90°.
[0010] In some embodiments, the minimum distance between two adjacent fins is greater than twice the sum of the thicknesses of the storage material portion and the second electrode portion, wherein the two adjacent fins are in the same storage device or in different storage devices.
[0011] In some embodiments, at least one of the first electrode portion and the second electrode portion includes at least one of titanium, titanium nitride, titanium silicon nitride, titanium aluminum nitride, titanium carbonitride, tantalum nitride, tantalum silicon nitride, tantalum aluminum nitride, tungsten nitride, tungsten silicide, doped polycrystalline silicon, and transparent conductive oxide.
[0012] In some embodiments, the storage material portion includes a phase change storage material.
[0013] In some embodiments, the storage material portion includes a ferroelectric material.
[0014] In some embodiments, the ferroelectric material includes at least one of zirconium oxide, hafnium oxide, titanium oxide, aluminum oxide, nickel oxide, and iron oxide.
[0015] In some embodiments, the first electrode portion of the storage device is configured to be electrically connected to a first metal wiring layer via a first conductive via located inside the dielectric portion; and
[0016] The second electrode portion of the storage device is configured to be electrically connected to a second metal wiring layer via a second conductive via located inside the dielectric portion, wherein the first metal wiring layer and the second metal wiring layer are located on opposite sides of the dielectric portion.
[0017] In some embodiments, multiple first electrode portions of a plurality of memory devices are configured to be electrically connected to a first metal wiring layer via the same first conductive via; and / or
[0018] Multiple second electrode portions of multiple storage devices are configured to be electrically connected to a second metal wiring layer via the same second conductive via.
[0019] According to a second aspect of this disclosure, a storage device is provided, the storage device comprising the storage device described above.
[0020] According to a third aspect of this disclosure, a method for fabricating a storage device is provided, comprising:
[0021] Provide a base;
[0022] A first electrode portion is formed on the substrate, wherein the first electrode portion includes one or more fin-like portions;
[0023] A storage material portion is formed on the first electrode portion, wherein at least a portion of the storage material portion covers the top surface and side surface of each of the one or more fin portions; and
[0024] A second electrode portion is formed on the storage material portion.
[0025] In some embodiments, at least one of the following is formed by atomic layer deposition:
[0026] The portion of the first electrode that is in direct contact with the storage material portion;
[0027] The second electrode section;
[0028] The portion of the second electrode that is in direct contact with the storage material portion; and
[0029] At least a portion of the storage material section.
[0030] In some embodiments, at least one of the following is formed by physical vapor deposition:
[0031] The first electrode section;
[0032] The portion of the first electrode that does not directly contact the storage material portion;
[0033] The second electrode section;
[0034] The portion of the second electrode that does not directly contact the storage material portion; and
[0035] At least a portion of the storage material section.
[0036] Other features and advantages of this disclosure will become clearer from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description
[0037] The accompanying drawings, which form part of this specification, illustrate embodiments of this disclosure and, together with the specification, serve to explain the principles of this disclosure.
[0038] This disclosure will become clearer with reference to the accompanying drawings and the following detailed description, wherein:
[0039] Figure 1 A schematic diagram of a cross-sectional structure of a storage device is shown;
[0040] Figure 2 A schematic cross-sectional view of a storage device according to an exemplary embodiment of the present disclosure is shown;
[0041] Figure 3 A schematic cross-sectional view of a storage device according to another exemplary embodiment of the present disclosure is shown;
[0042] Figure 4 A schematic cross-sectional view of a storage device according to yet another exemplary embodiment of the present disclosure is shown;
[0043] Figure 5 A schematic cross-sectional view of a storage device according to yet another exemplary embodiment of the present disclosure is shown;
[0044] Figure 6 A schematic flowchart of a method for fabricating a storage device according to an exemplary embodiment of the present disclosure is shown;
[0045] Figures 7(a) to 7(j) A schematic diagram of a process for fabricating a storage device according to a specific example of the present disclosure is shown;
[0046] Figure 8 A schematic diagram of the process of forming a first electrode portion in a method for fabricating a memory device according to another specific example of the present disclosure is shown.
[0047] Note that in the embodiments described below, the same reference numerals are sometimes used across different figures to denote the same parts or parts having the same function, and repeated descriptions are omitted. In this specification, similar reference numerals and letters are used to denote similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.
[0048] For ease of understanding, the positions, dimensions, and extents of the structures shown in the accompanying drawings and other materials may not represent actual positions, dimensions, and extents. Therefore, the disclosed invention is not limited to the positions, dimensions, and extents disclosed in the accompanying drawings and other materials. Furthermore, the drawings are not necessarily drawn to scale, and some features may be enlarged to show details of specific components. Detailed Implementation
[0049] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values of the components and steps set forth in these embodiments do not limit the scope of the present disclosure.
[0050] The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this disclosure or its application or use. Those skilled in the art will understand that they merely illustrate exemplary ways that can be used to implement this disclosure, and are not exhaustive.
[0051] Techniques, methods, and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and equipment should be considered part of the specification.
[0052] Figure 1 A schematic diagram of a cross-sectional structure of a storage device (memory cell) with a planar structure is shown. Figure 1 The text omits components used for electrically connecting storage devices to external circuits. For example... Figure 1As shown, the memory device may include a first electrode layer 110', a storage material layer 120', and a second electrode layer 130' stacked sequentially. Here, the first electrode layer 110', the storage material layer 120', and the second electrode layer 130' are all arranged in a planar layered configuration. Correspondingly, the device performance of the memory device is positively correlated or proportional to the effective area determined by the first electrode layer 110', the storage material layer 120', and the second electrode layer 130'. In other words, the device performance of the memory device is related to the area of the overlapping region among the first electrode layer 110', the storage material layer 120', and the second electrode layer 130'. The larger the area of the overlapping region, i.e., the larger the effective area of the memory device, the larger its polarization area. Under the same voltage, more polarization charge can be stored, thus improving the sensitivity, stability, and reliability of the memory device and helping to extend its lifespan. However, in planar memory devices, increasing the effective area inevitably leads to an increase in the planar area occupied by the entire memory device, which is not conducive to the miniaturization and high integration of the memory device or the storage device containing it. It may also make the wiring design in the memory device more difficult and may lead to an increase in the cost of the memory device or storage device.
[0053] To address the aforementioned problems, this disclosure provides a storage device. In an exemplary embodiment of this disclosure, as... Figures 2 to 5 As shown, the storage device may include a first electrode portion 110, a storage material portion 120, and a second electrode portion 130, wherein the first electrode portion 110, the storage material portion 120, and the second electrode portion 130 are stacked sequentially, that is, the storage material portion 120 is located between the first electrode portion 110 and the second electrode portion 130. By applying a corresponding voltage to the storage material portion 120 between the first electrode portion 110 and the second electrode portion 130, the electrical state of the storage material portion 120 can be changed as needed, thereby enabling data storage.
[0054] exist Figure 2 , Figure 4 and Figure 5 In the illustrated embodiment, three memory devices are shown, and the first electrode portion 110 of each memory device may include a fin portion 111. Additionally, in Figure 3 The illustrated embodiment shows a storage device whose first electrode portion 110 may include a plurality of (three shown in the figure) fins 111. Furthermore, in some embodiments, such as Figure 3 and Figure 5 As shown, the first electrode portion 110 of the storage device may further include a layered portion 112, which may be located in at least a portion of the area surrounding the fin-like portion 111, and is planar in layer form. The fin-like portion 111 protrudes relative to the layered portion 112, thereby increasing the effective area of the storage device. In some embodiments, such as Figure 2 and Figure 4 As shown, the first electrode portion 110 may include only a fin-shaped portion 111 without including the layered portion 112. In other embodiments, such as Figure 3 As shown, the first electrode portion 110 may include a plurality of fin-shaped portions 111, and adjacent fin-shaped portions 111 may be electrically connected by a layered portion 112. In some other embodiments, such as Figure 5 As shown, the first electrode portion 110 may include a fin-shaped portion 111 and a layered portion 112 located in at least a portion of the region surrounding the fin-shaped portion 111. Figure 5 In the specific example shown, the layered portion 112 in one storage device can also be connected to the layered portion 112 in an adjacent storage device, thereby electrically connecting the first electrode portions 110 of multiple storage devices together.
[0055] In some embodiments, such as Figure 2 As shown, the angle α between at least one side surface of at least one fin 111 and the bottom surface can be less than or equal to 90°. When the angle α is equal to 90°, the planar area occupied by the corresponding fin 111 can be reduced while maintaining the quality of subsequent film deposition as much as possible, thereby helping to reduce the planar area occupied by the storage device. When the angle α is less than 90°, it can help form a more reliable connection between the fin 111 and the layered portion 112, and can also help avoid the generation of voids between other film layers and the first electrode portion 110 or voids between film layers when subsequent film deposition is performed using methods such as physical vapor deposition, thereby enabling the formation of one or more film layers on the first electrode portion 110 with higher quality.
[0056] In addition, although the cross-sectional shape of the fin portion 111 is in Figures 2 to 5 The fin 111 is illustrated as a trapezoid, but this is exemplary and not limiting. The cross-sectional shape of the fin 111 can be any suitable shape, such as a triangle, a pentagon, etc. The cross-sectional shape of the fin 111 is also not limited to a convex polygon; it can also be a suitable concave polygon, for example, Figures 2 to 5 The top and / or side surfaces of the cross-sectional shape of the fin 111 shown may not be planar, but may be modified to have a certain undulation, thereby further increasing the effective area of the storage device. In some embodiments, one or more corners of the fin 111 may also be chamfered or rounded to help subsequent film layers be deposited better.
[0057] In some embodiments, the dimensions of the fin 111 can be appropriately designed according to the actual device requirements. Given a fixed planar area occupied by the memory device, the higher the fin 111 protrudes upwards, the greater the increase in the effective area of the memory device. However, the manufacturing difficulty of such a taller fin 111 may also increase accordingly. In some embodiments, the ratio between the height of the fin and the bottom surface feature dimensions (e.g., the length, width, diameter, etc. of the bottom surface) can be designed to be greater than 1:1, or greater than 1.5:1, or greater than 2:1, or greater than 3:1, etc.
[0058] like Figures 2 to 5 As shown, the storage material section 120 may be disposed on the first electrode section 110, and at least a portion of the storage material section 120 may cover the top and side surfaces of each of the one or more fin sections 111. Furthermore, in some embodiments, such as Figure 2 As shown, another portion of the storage material portion 120 can directly cover the substrate, for example, covering at least a portion of the area around the fin portion 111 or covering at least a portion of the area around the first electrode portion 110. Alternatively, in some embodiments, where the first electrode portion 110 further includes a layered portion 112, another portion of the storage material portion 120 can cover the layered portion 112 of the first electrode portion 110, such as... Figure 3 As shown. The storage material sections 120 in different storage devices can be physically or electrically isolated from each other, such as... Figure 2 , Figure 4 and Figure 5 As shown, the electrical state of the storage material section 120 in each storage device can be controlled individually, or in other words, the electrical state of the storage material section 120 in each storage device can be different, thus enabling each storage device to store its own corresponding data. Furthermore, the storage material sections 120 in the same storage device can be physically connected to form a continuous film-like structure, such as... Figure 3 As shown, the electrical states of different portions of the storage material portion 120 in this storage device will remain consistent, thereby storing data. In some embodiments, the thickness of the various portions of the storage material portion 120 in a storage device may be uniform. In other words, the storage material portion 120 may be conformally deposited on the exposed surface of the first electrode portion 110, or conformally deposited on all surfaces of the first electrode portion 110 except for the bottom surface, and in some cases may also cover at least a portion of the area surrounding the first electrode portion 110.
[0059] In some embodiments, the storage material section 120 may include a phase-change memory (PCM) material, and the corresponding storage device is a PCM. As a non-volatile storage device, PCM stores data by utilizing the difference in conductivity exhibited when a material transitions between crystalline and amorphous states. It possesses excellent characteristics such as data retention even when power is lost, low power consumption, high read / write speed, and high integration density. Furthermore, it is compatible with Complementary Metal Oxide Semiconductor (CMOS) technology and is expected to replace current mainstream products such as Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), and Flash memory, becoming the mainstream commercial product of the future. In some embodiments, the storage material section 120 may include a ferroelectric material. Ferroelectric materials exhibit ferroelectricity, which means that the material spontaneously polarizes within a certain temperature range, and this spontaneous polarization disappears when the temperature exceeds a certain critical value. Therefore, data storage can be achieved using this phase transition of ferroelectric materials. In some specific examples, at least one of zirconium oxide, hafnium oxide, titanium oxide, aluminum oxide, nickel oxide, and iron oxide may be used as the material of the storage material section 120.
[0060] like Figures 2 to 5 As shown, the second electrode portion 130 may be disposed on the storage material portion 120. Similarly, at least a portion of the second electrode portion 130 may cover the portion of the storage material portion 120 located above the top and side surfaces of each of the one or more fin portions 111. Furthermore, in some embodiments, another portion of the second electrode portion 130 may cover the portion of the storage material portion 120 that directly contacts the substrate. Alternatively, in some embodiments, where the first electrode portion 110 further includes a layered portion 112, another portion of the second electrode portion 130 may cover the portion of the storage material portion 120 located above the layered portion 112 of the first electrode portion 110. In the same storage device, the second electrode portion 130 may be formed as a continuous film layer structure, and the thickness of each portion of the second electrode portion 130 may be uniform. In other words, the second electrode portion 130 can be conformally deposited on the exposed surface of the storage material portion 120, or conformally grown on at least the top surface of the storage material portion 120, and in some cases can also cover the side surfaces of the storage material portion 120 and / or at least a portion of the area surrounding the storage material portion 120. Furthermore, in the presence of multiple storage devices, the second electrode portions 130 of these storage devices can also be connected together to form an integral film-like structure to simplify the circuitry, such as... Figure 4 As shown.
[0061] In some embodiments, the first electrode portion 110 and the second electrode portion 130 may be formed of the same electrode material. In other embodiments, the first electrode portion 110 and the second electrode portion 130 may be formed of different electrode materials. The electrode material is a conductive material, such as a conductive metal or a conductive compound. In a specific example, at least one of the first electrode portion 110 and the second electrode portion 130 may be formed of at least one of titanium, titanium nitride, silicon titanium nitride, aluminum titanium nitride, titanium carbonitride, tantalum nitride, silicon tantalum nitride, aluminum tantalum nitride, tungsten nitride, tungsten silicide, doped polycrystalline silicon, and transparent conductive oxides. For example, titanium nitride has certain adhesion properties, which helps to form a high-quality conductive film, thereby improving device performance. Furthermore, titanium nitride can be deposited by, for example, atomic layer deposition (ALD) or physical vapor deposition (PVD), offering high process flexibility and compatibility. In particular, when the portion of the first electrode portion 110 and / or the second electrode portion 130 that is in direct contact with the storage material portion 120 is deposited by ALD, it can help improve the performance of the storage device and avoid process contamination, etc.; while when the fin portion 111 of the first electrode portion 110 with a large thickness is deposited by PVD, the deposition rate can be effectively increased and the fabrication efficiency of the device can be improved.
[0062] In some embodiments, to facilitate and reliably fabricate a memory device having the fins as described above, the minimum distance between two adjacent fins 111 can be greater than twice the sum of the thicknesses of the storage material portion 120 and the second electrode portion 130. In particular, the minimum distance between two adjacent fins 111 can be greater than twice the sum of the thicknesses of the portions of the storage material portion 120 and the second electrode portion 130 deposited on the side surfaces of the fins 111, to avoid undesirable connections or short circuits in the storage material portion 120 or the second electrode portion 130 deposited on the adjacent side surfaces of the two adjacent fins 111. Here, the two adjacent fins 111 can be fins belonging to the same memory device, or they can be fins belonging to two different memory devices.
[0063] In some embodiments, such as Figure 3 and Figure 5 As shown, the thickness of the fin-shaped portion 111 of the first electrode portion 110 is greater than the thickness of the layered portion 112 of the first electrode portion 110. Furthermore, as... Figures 2 to 5As shown, the thickness of the fin-shaped portion 111 of the first electrode portion 110 can be greater than the thickness of the storage material portion 120 or greater than the thickness of the second electrode portion 130. In some embodiments, the thickness of the layered portion 112 of the first electrode portion 110, the thickness of the storage material portion 120, and the thickness of the second electrode portion 130 can be equal or unequal, without limitation, and are typically on the order of tens to hundreds of angstroms.
[0064] exist Figure 2 , Figure 4 and Figure 5 In the illustrated embodiment, since the first electrode portion 110 of each memory device includes a fin-shaped portion 111, it is compatible with... Figure 1 Compared to the storage devices shown, Figure 2 , Figure 4 The effective area of a single memory device in the figure is increased by an area approximately equivalent to the side surface area of the fin 111, thereby improving the sensitivity, stability, and reliability of the memory device and effectively extending its lifespan. Furthermore, as shown... Figure 3 As shown, if more fins 111 are provided in the same memory device, the effective area of the memory device can be further increased. However, providing multiple fins 111 may lead to a certain increase in the planar area occupied by the memory device, so a trade-off can be made according to actual needs. In addition, multiple fins 111 in the same memory device can have the same or different dimensional parameters. In practical applications, the number of fins 111 included in the first electrode portion 110 in each memory device and the dimensional parameters of each fin 111 can be appropriately selected according to the required device performance, without limitation.
[0065] like Figures 2 to 5As shown, in order to achieve electrical connection between the storage device and external circuitry, in some embodiments, the first electrode portion 110 of the storage device can be configured to be electrically connected to the first metal wiring layer 410 via a first conductive via 310 located inside the dielectric portion 200, and the second electrode portion 130 of the storage device can be configured to be electrically connected to the second metal wiring layer 420 via a second conductive via 320 located inside the dielectric portion 200. Here, the dielectric portion 200 can be formed jointly by a first dielectric portion 210 located below the storage device and a second dielectric portion 220 covering the storage device and connected to the first dielectric portion 210. The components such as the first dielectric portion 210, the first conductive via 310, and the first metal wiring layer 410 located below the storage device can be pre-formed before the storage device is formed. The storage device itself can be formed through a back-to-back process (BEOL), and after the storage device is formed, the components such as the second dielectric portion 220, the second conductive via 320, and the second metal wiring layer 420 are formed. Here, the first metal wiring layer 410 and the second metal wiring layer 420 can be located on opposite sides of the dielectric portion 200, respectively. However, it is understood that in some other embodiments, the memory device described herein can also be formed via a front-end process (FEOL), and this is not a limitation. The dielectric portion 200 is formed of an insulating material, such as an insulating oxide, an insulating nitride, etc., including silicon oxide, aluminum oxide, silicon nitride, aluminum nitride, etc. The conductive vias and metal wiring layers can be formed of conductive materials, such as copper, tungsten, or other conductive compound materials.
[0066] In some embodiments, such as Figure 2 As shown, the first electrode portion 110 of each memory device can be electrically connected to the corresponding first metal wiring layer 410 via a separate first conductive via 310. Similarly, the second electrode portion 130 of each memory device can be electrically connected to the corresponding second metal wiring layer 420 via a separate second conductive via 320. By applying electrical signals to the corresponding first metal wiring layer 410 and second metal wiring layer 420, the storage state of each memory device can be controlled individually.
[0067] In other embodiments, to further simplify the circuitry, particularly to simplify the connections between multiple storage devices and external circuitry, such as... Figure 4As shown, multiple second electrode portions 130 of multiple memory devices can be configured to be electrically connected to a second metal wiring layer 420 via the same second conductive via 320. Additionally, the first electrode portion 110 of each memory device can be electrically connected to a corresponding first metal wiring layer 410 via a corresponding first conductive via 310. In this way, the second electrode portions 130 of these memory devices will be subjected to the same electrical signal, but the storage state of each memory device can still be individually controlled by controlling the electrical signal applied to the first electrode portion 110 of each memory device.
[0068] Similarly, such as Figure 5 As shown, the multiple first electrode portions 110 of multiple memory devices can be configured to be electrically connected to the first metal wiring layer 410 via the same first conductive via 310, thereby simplifying the connection between the multiple memory devices and external circuits. Additionally, the second electrode portion 130 of each memory device can be electrically connected to the corresponding second metal wiring layer 420 via a corresponding second conductive via 320. In this way, the first electrode portions 110 of these memory devices will be subjected to the same electrical signal, but the storage state of each memory device can still be individually controlled by controlling the electrical signal applied to the second electrode portion 130 of each memory device.
[0069] According to a second aspect of this disclosure, a storage device is also provided, which may include the storage devices described above. Specifically, the storage device may include multiple storage devices arranged in an array to achieve the storage of large amounts of data. In a specific example, the storage device may be a non-volatile memory or the like used in a computer.
[0070] According to a third aspect of this disclosure, a method for fabricating a memory device is also provided, which can be used to fabricate one or more memory devices as described above. Figure 6 As shown, the method for manufacturing a storage device may include:
[0071] Step S100: Provide a substrate.
[0072] In a specific example, as shown in Figures 7(a) and 7(b), the substrate for carrying the memory device may include a first dielectric portion 210, a first metal wiring layer 410, and a first conductive via 310 as described above. Specifically, as shown in Figure 7(a), the required conductive via and the first metal wiring layer 410 can be formed in the first dielectric portion 210 using processes such as photolithography and etching. Then, as shown in Figure 7(b), vias can be formed at corresponding locations in the first dielectric portion 210 using processes such as photolithography and etching, and then the formed vias can be filled with, for example, tungsten metal, thereby forming the first conductive via 310 electrically connected to the first metal wiring layer 410. If necessary, the top surface of the substrate can also be chemically mechanically polished (CMP) to make it flat, thereby helping to improve the quality of the memory device formed in subsequent steps.
[0073] return Figure 6 The method for manufacturing storage devices may also include:
[0074] Step S200: A first electrode portion is formed on the substrate.
[0075] The first electrode portion 110 may include one or more fin-shaped portions 111 as described above. Furthermore, in some embodiments, the first electrode portion 110 of the storage device may also include a layered portion 112 as described above.
[0076] In one specific example, as shown in Figures 7(c) and 7(d), during the formation of the first electrode portion 110, a first electrode material 110a can be deposited on the substrate beforehand, and then the first electrode portion 110 located at the desired position on the substrate can be formed by processes such as photolithography and etching, wherein the first electrode portion 110 is electrically connected to the underlying first conductive via 310. In another specific example, the first electrode portion 110 can also be formed at the desired position on the substrate by processes such as photolithography, deposition, and lift-off, without limitation.
[0077] In yet another specific example, such as Figure 8 As shown, when the first electrode portion 110 includes the layered portion 112, the etching time or etching intensity can be appropriately reduced compared to the etching time or etching intensity required to form the first electrode portion 110 shown in FIG. 7(d) which only includes the finned portion 111. Figure 8 The etching time and etching intensity of the first electrode portion 110 shown are used to retain a portion of the first electrode material as the layered portion 112. Alternatively, after forming the fin-shaped portion 111 as shown in FIG. 7(d), another layer of the first electrode material may be deposited to form the layered portion 112.
[0078] Additionally, the first electrode material 110a can be a conductive material such as titanium, titanium nitride, titanium silicon nitride, titanium aluminum nitride, titanium carbonitride, tantalum nitride, tantalum silicon nitride, tantalum aluminum nitride, tungsten nitride, tungsten silicide, doped polycrystalline silicon, and transparent conductive oxide. In some embodiments, the first electrode material 110a or the first electrode portion 110 can be deposited using a PVD method. Alternatively, the first electrode material 110a or the first electrode portion 110 can be deposited using an ALD method to improve deposition quality. However, since the deposition rate of the ALD method is relatively slow, especially when depositing the fin portion 111, it may result in lower fabrication efficiency and higher fabrication costs. Alternatively, the portion of the first electrode portion 110 that is in direct contact with the storage material portion 120 can be deposited using an ALD method, while the portion of the first electrode portion 110 that is not in direct contact with the storage material portion 120 can be deposited using a PVD method to balance device quality and fabrication efficiency, and to avoid contamination between different materials.
[0079] return Figure 6 The method for manufacturing storage devices may also include:
[0080] In step S300, a storage material section is formed on the first electrode section.
[0081] In a specific example, as shown in FIG7(e), the storage material portion 120 can be conformally grown on the exposed surface of the first electrode portion 111 and the exposed surface of the substrate. In some embodiments, the ALD method can be used to grow the storage material portion 120 to obtain a high-quality storage material portion 120, avoiding the introduction of excessive defects, thereby improving the performance of the storage device. However, it is understood that in other embodiments, methods such as PVD can also be used to deposit the storage material portion 120. Here, the deposited storage material can be a phase change material or a ferroelectric material, such as zirconium oxide, hafnium oxide, titanium oxide, aluminum oxide, nickel oxide, and iron oxide. If necessary, the patterned storage material portion 120 can also be formed by processes such as photolithography and etching, or by processes such as photolithography, deposition, and lift-off, to meet the requirements of the device.
[0082] return Figure 5 The method for manufacturing storage devices may also include:
[0083] In step S400, a second electrode portion is formed on the storage material portion.
[0084] In a specific example, as shown in FIG7(f), the second electrode portion 130 can be conformally grown on the storage material portion 120. Similarly, the ALD method can be used to grow the second electrode portion 130 to obtain a high-quality second electrode portion 130. Alternatively, the PVD method can be used to deposit the second electrode portion 130 to improve the device fabrication efficiency. Alternatively, the ALD method can be used to deposit the portion of the second electrode portion 130 that is in direct contact with the storage material portion 120, while the PVD method can be used to deposit the portion of the second electrode portion 130 that is not in direct contact with the storage material portion 120, to balance device quality and fabrication efficiency, and to avoid contamination between different materials. The second electrode material can be the same as or different from the first electrode material. In a specific example, the second electrode material can be at least one of titanium, titanium nitride, titanium silicon nitride, titanium aluminum nitride, titanium carbonitride, tantalum nitride, tantalum silicon nitride, tantalum aluminum nitride, tungsten nitride, tungsten silicide, doped polycrystalline silicon, and transparent conductive oxide. In addition, if necessary, a patterned second electrode portion 120 can be formed by processes such as photolithography and etching, or by processes such as photolithography, deposition and lift-off, to meet the requirements of the device.
[0085] exist Figures 7(a) to 7(f) In the specific example shown, corresponding portions of multiple memory devices can be formed in the same process step to improve device fabrication efficiency. Furthermore, to separate adjacent memory devices so they can be controlled individually, as shown in FIG7(g), at least a portion of the storage material portion 120 and at least a portion of the second electrode portion 130 between two adjacent memory devices can be etched away. In the specific example shown in FIG7(g), corresponding portions of the storage material portion 120 and the second electrode portion 130 can be removed in the same etching step. However, it is understood that if the storage material portion 120 and the second electrode portion 130 are limited by their material and cannot be removed in the same etching step, the corresponding portions of the storage material portion 120 and the second electrode portion 130 can be removed in separate etching steps.
[0086] Furthermore, as shown in Figure 7(h), after the fabrication of the memory device is completed, a second dielectric portion 220 can be formed on the memory device. This second dielectric portion 220 covers the exposed surface of the memory device, preventing substances such as water and oxygen in the air from directly contacting the memory device, thereby helping to protect the memory device and extend its service life. In addition, the second dielectric portion 220 can also serve as a carrier for components such as the second conductive via and the second metal wiring layer that are subsequently formed.
[0087] As shown in Figure 7(i), through-holes can be formed by etching at corresponding positions in the second dielectric portion 220, and then a second conductive through-hole 320 can be formed by filling the through-hole with a metal such as tungsten. This second conductive through-hole 320 is electrically connected to the second electrode portion 130 of the storage device to apply signals from external circuitry to the second electrode portion 130. Furthermore, it is understood that CMP processing can be performed when necessary to make the upper surfaces of the second dielectric portion 220 and the second conductive through-hole 320 smooth, thereby improving the quality of subsequent processes.
[0088] Furthermore, as shown in FIG7(j), a patterned second metal wiring layer 420 can be formed at the corresponding position of the second dielectric portion 220 by processes such as photolithography and etching, or by processes such as photolithography, deposition and stripping, and the second metal wiring layer 420 is electrically connected to the second conductive via.
[0089] In the memory devices and storage apparatuses disclosed herein, by forming at least a portion of the first electrode portion of the memory device into a fin-like shape that protrudes upwards, the effective area of the memory device can be increased. This allows more polarization charge to be stored within the same planar area, resulting in better sensitivity, stability, and reliability of the memory device, and contributing to extended device lifespan. Furthermore, the method for fabricating such a memory device is compatible with existing semiconductor processes, helping to reduce device fabrication costs and improve device fabrication reliability.
[0090] The terms “left,” “right,” “front,” “back,” “top,” “bottom,” “upper,” “lower,” “high,” “lower,” etc., used in the specification and claims, if present, are for descriptive purposes and not necessarily for describing unchanging relative positions. It should be understood that such terms are interchangeable where appropriate, enabling embodiments of this disclosure described herein to operate, for example, in orientations different from those shown or otherwise described herein. For example, when the device in the drawings is reversed, a feature previously described as “above” other features may now be described as “below” other features. The device may also be oriented in other ways (rotated 90 degrees or in other orientations), in which case the relative spatial relationships will be interpreted accordingly.
[0091] In the specification and claims, when an element is described as being "on top of," "attached to," "connected to," "coupled to," or "in contact with" another element, the element may be directly located on top of, directly attached to, directly connected to, directly coupled to, or directly in contact with the other element, or one or more intermediate elements may be present. Conversely, when an element is described as being "directly" located on top of, directly attached to, directly connected to, directly coupled to, or directly in contact with another element, no intermediate elements are present. In the specification and claims, when a feature is arranged "adjacent" to another feature, it may mean that a feature has a portion overlapping with the adjacent feature or a portion located above or below the adjacent feature.
[0092] As used herein, the term “exemplary” means “serving as an example, instance, or illustration” and not as a “model” to be precisely copied. Any implementation described herein by example is not necessarily to be construed as preferred or advantageous over other implementations. Moreover, this disclosure is not limited to any theory expressed or implied as given in the field of art, background art, summary of invention, or detailed description.
[0093] As used herein, the term "substantially" means any minor variation resulting from design or manufacturing defects, device or component tolerances, environmental influences, and / or other factors. The term "substantially" also allows for differences from the perfect or ideal situation due to parasitic effects, noise, and other practical considerations that may exist in the actual implementation.
[0094] Furthermore, terms such as “first,” “second,” etc., may be used in this document for reference purposes only and are not intended to be limiting. For example, unless the context clearly indicates otherwise, the words “first,” “second,” and other such numerical terms relating to structures or elements do not imply order or sequence.
[0095] It should also be understood that when the term “including / contains” is used herein, it indicates the presence of the indicated feature, whole, step, operation, unit and / or component, but does not preclude the presence or addition of one or more other features, wholes, steps, operations, units and / or components and / or combinations thereof.
[0096] In this disclosure, the term “provide” is used broadly to cover all ways of obtaining an object, and therefore “provide an object” includes, but is not limited to, “purchasing,” “preparing / manufacturing,” “arranging / setting up,” “installing / assembling,” and / or “ordering” an object.
[0097] As used herein, the term “and / or” includes any and all combinations of one or more of the listed items in association. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this disclosure. As used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise.
[0098] Those skilled in the art will recognize that the boundaries between the above operations are merely illustrative. Multiple operations may be combined into a single operation, a single operation may be distributed among additional operations, and operations may be performed with at least partial overlap in time. Moreover, alternative embodiments may include multiple instances of a particular operation, and the order of operations may be changed in various other embodiments. However, other modifications, variations, and substitutions are equally possible. Aspects and elements of all the embodiments disclosed above may be combined in any way and / or in combination with aspects or elements of other embodiments to provide multiple additional embodiments. Therefore, this specification and the accompanying drawings should be considered illustrative rather than restrictive.
[0099] While specific embodiments of this disclosure have been described in detail by way of example, those skilled in the art should understand that the examples are for illustrative purposes only and not intended to limit the scope of this disclosure. The various embodiments disclosed herein can be combined in any way without departing from the spirit and scope of this disclosure. Those skilled in the art should also understand that various modifications can be made to the embodiments without departing from the scope and spirit of this disclosure. The scope of this disclosure is defined by the appended claims.
Claims
1. A memory device, comprising: The storage device is a phase-change storage device, and the storage device includes: A first electrode portion, the first electrode portion including one or more fin-shaped portions, wherein the angle between at least one side surface of at least one fin-shaped portion and the bottom surface is less than 90°; A storage material section, the storage material section being disposed on the first electrode section, and at least a portion of the storage material section covering and conformally deposited on the top and side surfaces of each of the one or more fin sections, wherein the storage material section comprises a phase change storage material; and The second electrode portion is disposed on the storage material portion; The first electrode portion, the storage material portion, and the second electrode portion are stacked sequentially, and the minimum distance between two adjacent fin portions is greater than twice the sum of the thicknesses of the storage material portion and the second electrode portion. The two adjacent fin portions are located in the same storage device or in different storage devices.
2. The memory device of claim 1, wherein, At least one of the first electrode portion and the second electrode portion includes at least one of titanium, titanium nitride, titanium silicon nitride, titanium aluminum nitride, titanium carbonitride, tantalum nitride, tantalum silicon nitride, tantalum aluminum nitride, tungsten nitride, tungsten silicide, doped polycrystalline silicon, and transparent conductive oxide.
3. The storage device according to claim 1, characterized in that, The storage material section includes ferroelectric materials.
4. The storage device according to claim 3, characterized in that, The ferroelectric material includes at least one of zirconium oxide, hafnium oxide, titanium oxide, aluminum oxide, nickel oxide, and iron oxide.
5. The storage device according to claim 1, characterized in that, The first electrode portion of the storage device is configured to be electrically connected to the first metal wiring layer via a first conductive via located inside the dielectric portion. as well as The second electrode portion of the storage device is configured to be electrically connected to a second metal wiring layer via a second conductive via located inside the dielectric portion, wherein the first metal wiring layer and the second metal wiring layer are located on opposite sides of the dielectric portion.
6. The memory device of claim 5, wherein, Multiple first electrode portions of multiple storage devices are configured to be electrically connected to a first metal wiring layer via the same first conductive via; and / or Multiple second electrode portions of multiple storage devices are configured to be electrically connected to a second metal wiring layer via the same second conductive via.
7. A storage device, characterized by The storage device includes the storage device according to any one of claims 1 to 6.
8. A method of fabricating a memory device, the method comprising: The storage device is a phase-change storage device, and the method for manufacturing the storage device includes: Provide a base; A first electrode portion is formed on the substrate, wherein the first electrode portion includes one or more fin-like portions, wherein the angle between at least one side surface of at least one fin-like portion and the bottom surface is less than 90°; A storage material portion is formed on the first electrode portion, wherein at least a portion of the storage material portion covers and conformally deposits on the top and side surfaces of each of the one or more fin portions, and the storage material portion comprises a phase change storage material; and A second electrode portion is formed on the storage material portion. The minimum distance between two adjacent fins is greater than twice the sum of the thicknesses of the storage material portion and the second electrode portion, wherein the two adjacent fins are located in the same storage device or in different storage devices.
9. The memory device fabrication method of claim 8, wherein, At least one of the following can be formed by atomic layer deposition: The portion of the first electrode that is in direct contact with the storage material portion; The second electrode section; The portion of the second electrode that is in direct contact with the storage material portion; as well as At least a portion of the storage material section.
10. The memory device fabrication method of claim 8, wherein, At least one of the following can be formed through physical vapor deposition: The first electrode section; The portion of the first electrode that does not directly contact the storage material portion; The second electrode section; The portion of the second electrode that does not directly contact the storage material portion; as well as At least a portion of the storage material section.