Power semiconductor device

Abstract

A power semiconductor device includes a conductor portion, a circuit component, a substrate that supports the conductor portion and the circuit component, and a sealing member that forms a first flow path having a first region thermally connected to the power circuit body and a second region thermally connected to the circuit component.

Description

Technical Field

[0001] This invention relates to power semiconductor devices. Background Technology

[0002] In the field of electric vehicles, miniaturization of the motor and inverter is required to maximize the space available for the battery. With miniaturization, smaller inverters with higher output density are needed, requiring compact designs and high cooling performance, leading to technological improvements.

[0003] As background technology for this invention, the following Patent Document 1 is known. In Patent Document 1, in the circuit board 10 of an electronic device 100, the injection molding resin 50 has a flow path forming portion 53 that seals the opening 230 and forms part of the flow path 220, and a sealing portion 52 in which an O-ring 400 is disposed at a position surrounding the flow path forming portion 53. It shows a configuration in which the flow path forming portion 53 seals the opening 230 while the O-ring 400 is held between the sealing portion 52 and the mounted body 200. This configuration discloses a technology for an electronic device that ensures heat dissipation without increasing the number of components.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: JP 2016-119427 Summary of the Invention

[0007] In the existing structure described in Patent Document 1, it is necessary to increase the area required to seal the refrigerant on the surface of the printed circuit board. If this results in an increase in the distance between the capacitor and the drive circuit and the power module, there is a concern that it may cause an increase in inductance. In addition, in this case, an additional flow path is required to cool the heat-generating circuit components, which raises concerns that the flow path will become more complex and larger.

[0008] Therefore, the objective of this invention is to provide a power semiconductor device that can simultaneously achieve low inductance and miniaturization by increasing the mounting density of circuit elements and improving cooling performance.

[0009] The power semiconductor device of the present invention comprises: a power semiconductor element; a conductor portion for transmitting a main current of the power semiconductor element; a circuit component for energizing the main current or a control current for controlling the power semiconductor element; a substrate for supporting the power semiconductor element, the conductor portion, and the circuit component; and a sealing member for sealing the power semiconductor element, the conductor portion, the circuit component, and the substrate, wherein the power semiconductor element and the conductor portion constitute a power circuit body that outputs alternating current, and the sealing member forms a first flow path for supplying refrigerant flow, the first flow path having a first region thermally connected to the power circuit body and a second region thermally connected to the circuit component.

[0010] Invention Effects

[0011] A power semiconductor device is provided that can simultaneously achieve low inductance and miniaturization by increasing the mounting density of circuit elements and improving cooling performance. Attached Figure Description

[0012] Figure 1 This is a diagram of a power semiconductor device according to the first embodiment of the present invention.

[0013] Figure 2 This is a diagram of a power semiconductor device according to the second embodiment of the present invention.

[0014] Figure 3 This is a diagram of a power semiconductor device according to the third embodiment of the present invention.

[0015] Figure 4 This is a diagram of a power semiconductor device according to the fourth embodiment of the present invention.

[0016] Figure 5 yes Figure 4 A variation of the above.

[0017] Figure 6 This is a diagram of a power semiconductor device according to the fifth embodiment of the present invention.

[0018] Figure 7 This is a perspective view of a power semiconductor device according to the sixth embodiment of the present invention.

[0019] Figure 8 This is a perspective view of a power semiconductor device according to the seventh embodiment of the present invention.

[0020] Figure 9 This is a perspective view of a power semiconductor device according to the eighth embodiment of the present invention.

[0021] Figure 10 This is a perspective view of a power semiconductor device according to the ninth embodiment of the present invention.

[0022] Figure 11 yes Figure 10 A variation of the above.

[0023] Figure 12 This is a perspective view of a power semiconductor device according to the tenth embodiment of the present invention. Detailed Implementation

[0024] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The following description and drawings are illustrative of the invention, and appropriate omissions and simplifications have been made to make the description clearer. The present invention can also be implemented in a variety of other forms. Unless otherwise specified, the constituent elements can be singular or plural.

[0025] Regarding the positions, sizes, shapes, and extents of the constituent elements shown in the accompanying drawings, sometimes the actual positions, sizes, shapes, and extents are not presented for ease of understanding of the invention. Therefore, the present invention is not limited to the positions, sizes, shapes, and extents disclosed in the accompanying drawings.

[0026] (Embodiments and Structure of the Invention)

[0027] Figure 1 This is a diagram of a power semiconductor device according to the first embodiment of the present invention.

[0028] The power semiconductor element 1 is connected to the conductor portions 5a and 5b via solder 2 to form a power circuit. The power semiconductor element 1 is, for example, a combination of an IGBT (Insulated Gate Bipolar Transistor) and a diode, or a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).

[0029] Conductor sections 5a and 5b transmit collector / emitter currents, which are the main currents of the power semiconductor element 1. Circuit component 8 consists of one or both of a capacitor circuit that smooths the power supply and a drive circuit that outputs a gate current as a control current.

[0030] The sealing member 7 is made of resin or similar material, and is used to seal the power semiconductor element 1, conductor portions 5a and 5b, and circuit components 8 by injection molding and fixing them to the substrate 3. The power semiconductor element 1 and conductor portions 5a and 5b form a power circuit body, which is supported by the substrate 3.

[0031] Furthermore, the sealing member 7 forms a first flow path 9 and a second flow path 14. The first flow path 9 and the second flow path 14 cool the heated conductors 5a, 5b or circuit components 8 by allowing refrigerant to flow through them. In addition, the sealing member 7 utilizes the surface layer difference of the injection molding resin-filled substrate 3 to easily seal the refrigerant into the flow path.

[0032] The first flow path 9 is formed by a sealing member 7, a conductor portion 5a, a circuit component 8, and a flow path housing 6. The conductor portion 5a has an exposed surface not covered by the sealing member 7, so as to facilitate contact with the refrigerant flowing in the first flow path 9. The conductor portion 5a can be in direct contact with the refrigerant in this exposed surface, or it can be covered by a gasket or the like of a heat-conducting member for protection, so as to indirectly contact the refrigerant.

[0033] The flow path housing 6 is fixed by a sealing member 7 in such a way that its surface is in direct contact with the refrigerant. The sealing member 7 is disposed on the surface opposite to the substrate 3.

[0034] The sealing member 4 is disposed in a groove provided in the sealing member 7 or the flow path housing 6, and is a member that seals the refrigerant flowing inside the first flow path by connecting and fixing the flow path housing 6 and the sealing member 7. The sealing member 4 is made of, for example, an O-ring or a gasket.

[0035] The substrate 3 is provided with through holes for mounting circuit elements. Furthermore, in the substrate 3, the upper surface of the paper is designated as the first surface 31, and the lower surface is designated as the second surface 32.

[0036] In the first flow path 9, the area enclosed by the conductor portion 5a, the sealing member 7, and the flow path housing 6 is designated as the first region 10, and the area enclosed by the circuit component 8, the sealing member 7, and the flow path housing 6 is designated as the second region 11. The first region 10 is a region thermally connected to the power semiconductor element 1 or the conductor portion 5a (where heat conduction is possible between them). The second region 11 is formed by at least a portion of the sealing member 7 and the surface (exposed surface) of the circuit component 8 or a heat-conducting member, and is thermally connected to the circuit component 8 (where heat conduction is possible between them).

[0037] The circuit component 8 is fixed in the second region 11 by a sealing member 7 with its surface in contact with the refrigerant. Furthermore, the surface of the circuit component 8 protrudes from the sealing member 7, forming a portion of the bottom surface of the first flow path 9. The contact surface of the circuit component 8 with the refrigerant is covered by an interfacing member to protect the component from direct contact with the refrigerant. The interfacing member is, for example, a heat-conducting gasket. This improves the cooling effect of the circuit component 8. Furthermore, by placing the circuit component 8 within the flow path 9, the cooling performance can be further enhanced. Additionally, by placing the circuit component 8 close to the power semiconductor element 1, the inductance can be reduced.

[0038] Furthermore, the sealing member 7 forms a first flow path 9 on the first surface 31 side of the substrate 3 and a second flow path 14 on the second surface 32 side of the substrate 3. The second flow path 14 has a third region 15 that is thermally connected to the power circuit body. Thus, the power circuit body is cooled from both sides using refrigerant, and the circuit component 8 is simultaneously cooled using the first flow path 9. Therefore, the mounting density is increased while the cooling effect is also improved. Alternatively, the conductor portion 5b in the third region 15 may not be directly exposed to the refrigerant relative to the exposed surface of the flow path portion 14, but rather indirectly cooled by coating with a thermally conductive member.

[0039] Figure 2 This is a diagram of a power semiconductor device according to the second embodiment of the present invention.

[0040] Conductor portions 5a and 5b have exposed surfaces protruding from the sealing member 7, and a wire portion (cooling wire) 12 with a bend is connected to these exposed surfaces. The cooling wire 12 is provided on the exposed surfaces of conductor portions 5a and 5b to increase the heat dissipation area. This increases the heat dissipation area and improves the cooling effect. The cooling wire 12 is joined to the conductor portions 5a and 5b using joining methods such as ultrasonic bonding, soldering, or resistance welding. Furthermore, the cooling wire 12 is made of materials such as aluminum, copper, or SUS.

[0041] Figure 3 This is a diagram of a power semiconductor device according to the third embodiment of the present invention.

[0042] Conductor portions 5a and 5b have exposed surfaces protruding from the sealing member 7, and columnar heat sinks (heat sinks) 13 are provided on these exposed surfaces. The heat sinks 13 are provided to increase the heat dissipation area of ​​the conductor portions 5a and 5b, and their shapes are cylindrical, prismatic, plate-shaped, etc. Due to the increased heat dissipation area, the cooling effect is improved. Furthermore, in the case of cylindrical or prismatic shapes, it is preferable that the cylindrical surfaces of the heat sinks 13 are arranged in an alternating or grid-like pattern to facilitate the flow of the refrigerant. The heat sinks 13 can be constructed as integral components with the conductor portions 5a and 5b by planing or casting using a mold, or they can be constructed by joining other components to the conductor portions 5a and 5b. Figure 3 The image shows an example where the heat sink 13 is configured as a plate and is formed parallel to the flow of the refrigerant.

[0043] Figure 4 This is a diagram of a power semiconductor device according to the fourth embodiment of the present invention.

[0044] The first flow path 9A or the second flow path 14A is formed by using the sealing member 7A and the flow path housing 6A connected to the sealing member 7A. Specifically, as follows: Figure 4 As shown, the sealing member 7A forms at least a portion of the bottom surface of the first flow path 9A or the second flow path 14A, and the flow path housing 6A is formed in a concave shape. The bottom surface of the first flow path 9A or the second flow path 14A has opposing upper surfaces and side surfaces connected to these upper surfaces. By making both the sealing member 7A and the flow path housing 6A concave, the flow path area of ​​the refrigerant is easily increased. As a result, the cooling effect of the conductor portions 5a and 5b is improved.

[0045] Figure 5 yes Figure 4 A variation of the above.

[0046] The surface of the sealing member 7B that contacts the first flow path 9B and the flow path housing 6B is formed as a flat surface. The flow path housing 6B and Figure 4 Similarly, the terrain becomes concave. Therefore, regarding the first flow path 9B, the upper surface of the first flow path 9B is disposed on the flow path housing 6B, and a portion of the flow path wall is also disposed on the flow path housing 6B. With this configuration, semiconductor devices can be easily manufactured.

[0047] Figure 6 This is a diagram of a power semiconductor device according to the fifth embodiment of the present invention.

[0048] In addition to the through holes provided for mounting power circuitry, the substrate 3C also has a substrate through hole 161 as a first through hole to enable communication between the first flow path 9C and the second flow path 14C. Similarly, the sealing member 7C also has a sealing member through hole 162 as a second through hole to enable communication between the first flow path 9C and the second flow path 14C.

[0049] The through-hole 16, formed by the substrate through-hole 161 and the sealing member through-hole 162, connects the refrigerants flowing inside the first flow path 9C and the second flow path 14C. Thus, the flow path inlet and outlet, which would normally need to be provided separately for the first flow path 9C or the second flow path 14C, are each formed at a single point, allowing refrigerant to flow in and out relative to the semiconductor device.

[0050] Figure 7 This is a diagram of a power semiconductor device according to the sixth embodiment of the present invention. Furthermore, Figure 7 The following diagrams are used in Figures 3-6 The description also uses a conductor portion 5a with a heat sink 13, but the heat sink 13 may not be provided on the conductor portion 5a, or it may be replaced by a [other material]. Figure 2 The cooling wire 12 is described in the text. The same applies to the conductor portion 5b.

[0051] The first flow path 9D cools the conductor sections 5a of the three output phases of the power conversion device, that is, the three phases of the power circuit. Each phase outputs alternating current and is connected in series with respect to the flow path 9D. The three-phase power circuit is arranged in a straight line and connected in series with respect to the flow path 9D. The flow path 9D is also linearly shaped. This reduces the pressure drop of the refrigerant relative to the flow path walls. Furthermore, it increases the refrigerant flow rate, thus improving the cooling effect.

[0052] A refrigerant inlet / outlet 17, which serves as an inflow portion for refrigerant to flow into the flow path housing 6D and an outflow portion for refrigerant to flow out of the flow path housing 6D, is provided in the flow path housing 6D and is formed in a direction perpendicular to the surface of the substrate 3. By forming the refrigerant inlet / outlet 17 in a direction perpendicular to the substrate 3, the size of the refrigerant inlet / outlet 17 can be maximized, and the pressure drop relative to the flow path wall can be reduced.

[0053] Figure 8 This is a perspective view of a power semiconductor device according to the seventh embodiment of the present invention.

[0054] A refrigerant inlet / outlet 17E is formed in a direction horizontal to the surface of the substrate 3, and the refrigerant inlet / outlet 17E is disposed in a flow path housing 6E, which serves as the sidewall of the first flow path 9E. As a result, the stack of power semiconductor devices is thinned, which helps in miniaturization.

[0055] Figure 9 This is a perspective view of a power semiconductor device according to the eighth embodiment of the present invention.

[0056] The three-phase power circuitry is arranged in a straight line along the long side of the substrate 3 in a first column 91, and the circuit components 8 are arranged along a second column 92 parallel to the first column. A first flow path 9F is formed not along the first column 91 and cools both the three-phase power circuitry and the circuit components 8. Figure 9 In this structure, the flow path 9F is formed in an S-shape in a direction horizontal to the surface of the substrate 3. By forming the S-shaped flow path 9F, insulation of the three-phase power circuit can be ensured, and the circuit component 8 can be cooled using the same flow path 9F, thus improving the cooling effect.

[0057] Furthermore, while the S-shaped flow path 9F is formed, the refrigerant inlet / outlet 17F provided on the flow path housing 6F is formed in a direction perpendicular to the surface of the substrate 3. However, as long as it does not cause a problem in the structure, it can also be formed in a direction horizontal to the surface of the substrate 3.

[0058] Figure 10 This is a perspective view of a power semiconductor device according to the ninth embodiment of the present invention.

[0059] The refrigerant inlet 17G is formed in a direction perpendicular to the surface of the substrate 3, but the refrigerant outlet 17G is not provided in the same flow path 9G, but is formed in a flow path that passes through the through hole 16 and is provided on the opposite side of the substrate 3. In this way, by passing through the through hole 16 of the substrate 3, the flow path when cooling both sides of the substrate 3 can be simplified, and miniaturization of power semiconductor devices, component reduction, and voltage drop reduction can be achieved.

[0060] Figure 11 yes Figure 10 A variation of the above.

[0061] In the flow path section 9H, Figure 9 as well as Figure 10 The corners of the S-shaped flow path wall shown are shaped as curved flow path walls 20. Thus, the curved flow path wall 20, with its zigzag shape, reduces the pressure drop of the refrigerant relative to the flow path housing 6H. Furthermore, its curved shape increases the refrigerant velocity and flow rate, thereby improving the cooling effect.

[0062] Figure 12 This is a perspective view of a power semiconductor device according to the tenth embodiment of the present invention.

[0063] Heat sinks 13 are provided on the conductor portions of the upper and lower bridge arms of the three-phase power semiconductor. A partition 19 is provided between the heat sinks 13 exposed within the flow path housing 6J. The partition 19 is formed on the sealing member 7 or the flow path housing 6J. This ensures the insulation distance between the power semiconductor devices. Furthermore, by using the partition 19 to control the refrigerant flow rate in the flow path section 9J, the refrigerant is rectified, increasing and homogenizing the refrigerant flow rate on the surface of the conductor portion, thereby improving the cooling effect.

[0064] According to the first embodiment of the present invention described above, the following effects are achieved.

[0065] (1) The power semiconductor element 1 includes: conductor portions 5a and 5b for transmitting the main current of the power semiconductor element 1; a circuit component 8 for energizing the main current or a control current for controlling the power semiconductor element 1; a substrate 3 for supporting the power semiconductor element 1, conductor portions 5a and 5b, and circuit component 8; and a sealing member 7 for sealing the power semiconductor element 1, conductor portions 5a and 5b, circuit component 8, and substrate 3. The power semiconductor element 1 and conductor portions 5a and 5b constitute a power circuit that outputs alternating current. The sealing member 7 forms a first flow path 9 for supplying refrigerant. The first flow path 9 has a first region 10 that is thermally connected to the power circuit (allowing for thermal conduction between the refrigerant and the power circuit) and a second region that is thermally connected to the circuit component (allowing for thermal conduction between the refrigerant and the circuit component). Thus, a power semiconductor device that simultaneously achieves low inductance and miniaturization by simultaneously increasing the mounting density of the circuit components and improving cooling performance can be provided.

[0066] (2) The surface of the circuit component 8 is exposed from the sealing member 7, forming part of the bottom surface of the first flow path 9. This improves the cooling performance of the power circuit body.

[0067] (3) Conductor portions 5a and 5b have exposed surfaces that protrude from the sealing member 7, and wire portions 12 with bends are connected to the exposed surfaces. As a result, the cooling performance of the power circuit body can be improved.

[0068] (4) Conductor portions 5a and 5b have exposed surfaces that protrude from the sealing member 7, and columnar heat sinks 13 are provided on the exposed surfaces. This improves the cooling performance of the power circuit body.

[0069] (5) The sealing member 7 forms a first flow path 9 on the first surface 31 side of the substrate 3 and a second flow path 14 on the second surface 32 side of the substrate 3. The second flow path 14 has a third region 15 that is thermally connected to the power circuit body (and can conduct heat between the power circuit body and the power circuit body). Thus, the power circuit body can be cooled from both sides.

[0070] (6) The first flow path 9 and the second flow path 14 are constituted by a sealing member 7 and a flow path housing 6 connected to the sealing member 7. The sealing member 7 forms at least a portion of the bottom surface of the first flow path 9 and the second flow path 14. The flow path housing 6 has an upper surface opposite to the bottom surface of the first flow path 9 and the second flow path 14, respectively, and a side surface connected to the upper surface. As a result, the flow rate of refrigerant flowing into the first flow path 9 or the second flow path 14 can be increased.

[0071] (7) The substrate 3 has a first through hole 161, and the sealing member 7 has a second through hole 162 that connects the first flow path 9 and the second flow path 14 and passes through the first through hole 161. Therefore, by making the first flow path 9 and the second flow path 14 connected together, the number of flow path inlets and outlets can be reduced. Furthermore, the cooling effect of the power circuit can be improved by utilizing the refrigerant passing through the first through hole 161 and the second through hole 162.

[0072] (8) The flow path housing 6 has an inlet portion 17 for refrigerant to flow into the flow path 9 and an outlet portion 17 for refrigerant to flow out of the flow path 9. The inlet portion 17 and the outlet portion 17 are formed in the first flow path 9, and the three-phase power circuit is arranged in a straight line in the first flow path 8. As a result, the three-phase power circuit can be cooled efficiently.

[0073] (9) The inflow portion 17 and the outflow portion 17 are formed on the sidewall of the first flow path 9. As a result, the stacking in the height direction of the power semiconductor device can be reduced, which helps to miniaturize the device.

[0074] (10) The flow path housing 6 has an inlet portion 17 for refrigerant to flow into the flow path housing 6 and an outlet portion 17 for refrigerant to flow out of the flow path housing 6. The three-phase power circuit elements are arranged along a straight first column 91, and the circuit components 8 are arranged along a second column 92 parallel to the first column 91. The first flow path 9 is formed in a manner that does not follow the first column 91, and cools the three-phase power circuit elements and the circuit components 8. This helps to insulate the power circuit elements from each other, and cools the power circuit elements and the circuit components 8 using a single flow path.

[0075] (11) The sealing member 7 is provided between the three phases of the power circuit body, and the first flow path 9 is formed into a tortuous shape. As a result, the voltage drop relative to the corner of the flow path 9 can be reduced.

[0076] (12) In the exposed surface of the power circuit body within the first flow path 9, a partition 19 is provided between the upper and lower bridge arms of the power circuit body. As a result, the refrigerant is rectified, the flow rate of the refrigerant on the surface of the conductor is increased and homogenized, and the cooling effect is improved.

[0077] The above-described embodiments, without departing from the technical concept of the invention, can be eliminated, replaced, or added to other configurations, and such modifications are also included within the scope of the present invention. Furthermore, configurations combining the above-described embodiments and multiple variations can also be adopted.

[0078] Explanation of reference numerals in the attached figures

[0079] 1 Power Semiconductor Components

[0080] 2 solder

[0081] 3. 3C substrate

[0082] 31 First page

[0083] 32 Second page

[0084] 4 sealing components

[0085] 5a, 5b conductor sections

[0086] 6, 6A, 6B, 6D, 6E, 6G, 6H, 6J flow path housings

[0087] 7, 7A, 7B, 7C Sealing Components

[0088] 8 circuit components

[0089] 9. 9A~J First Flow Path

[0090] 91 Column 1

[0091] 92 Column 2

[0092] 10th District 1

[0093] 11 Area 2

[0094] 12 cooling wires

[0095] 13 heatsinks

[0096] 14, 14A, 14C 2nd flow path

[0097] 15th District 3

[0098] 16 through holes

[0099] 161 substrate through-hole

[0100] 162 sealing component through hole

[0101] 17, 17E, 17F, 17G refrigerant inlet / outlet

[0102] 19 partitions

[0103] 20 Curved Flow Path Wall.

Claims

1. A power semiconductor device comprising: Power semiconductor devices; The conductor portion that transmits the main current of the power semiconductor element; A circuit component that energizes the main current or the control current that controls the power semiconductor element; A substrate that supports the power semiconductor element, the conductor portion, and the circuit components; as well as A sealing member that encapsulates the power semiconductor element, the conductor portion, the circuit components, and the substrate. The power semiconductor element and the conductor portion constitute a power circuit that outputs alternating current. The sealing member forms a first flow path for refrigerant flow. The first flow path has a first region thermally connected to the power circuit body and a second region thermally connected to the circuit component.

2. The power semiconductor device according to claim 1, wherein, The surface of the circuit component is exposed from the sealing member, forming part of the bottom surface of the first flow path.

3. The power semiconductor device according to claim 1, wherein, The conductor portion has an exposed surface that protrudes from the sealing member. A wire portion with a bend is connected to the exposed surface.

4. The power semiconductor device according to claim 2, wherein, The conductor portion has an exposed surface that protrudes from the sealing member. A wire portion with a bend is connected to the exposed surface.

5. The power semiconductor device according to claim 1, wherein, The conductor portion has an exposed surface that protrudes from the sealing member. The exposed surface is provided with columnar heat sinks.

6. The power semiconductor device according to claim 2, wherein, The conductor portion has an exposed surface that protrudes from the sealing member. The exposed surface is provided with columnar heat sinks.

7. The power semiconductor device according to claim 1, wherein, The sealing member forms the first flow path on the first surface of the substrate and a second flow path on the second surface of the substrate. The second flow path has a third region that is thermally connected to the power circuit body.

8. The power semiconductor device according to claim 7, wherein, The first flow path and the second flow path are constituted by the sealing member and the flow path housing connected to the sealing member. The sealing member forms at least a portion of the bottom surface of the first flow path and at least a portion of the bottom surface of the second flow path. The flow path housing has an upper surface that is opposite to the bottom surface of the first flow path and the bottom surface of the second flow path, respectively, and a side surface connected to the upper surface.

9. The power semiconductor device according to claim 8, wherein, The substrate has a first through hole. The sealing member has a second through hole that connects the first flow path and the second flow path and passes through the first through hole.

10. The power semiconductor device according to claim 8, wherein, The flow path housing has an inlet portion for the refrigerant to flow into the flow path and an outlet portion for the refrigerant to flow out of the flow path. The inflow section and the outflow section are formed in the first flow path. The three-phase power circuits are arranged in a straight line within the first flow path.

11. The power semiconductor device according to claim 10, wherein, The inflow section and the outflow section are formed on the sidewall of the first flow path.

12. The power semiconductor device according to claim 8, wherein, The flow path housing has an inlet portion for the refrigerant to flow into the flow path housing and an outlet portion for the refrigerant to flow out of the flow path housing. The three-phase power circuitry is arranged along a straight first column. The circuit components are arranged along a second column parallel to the first column. The first flow path is formed not along the first column and cools the three-phase power circuit body and the circuit components.

13. The power semiconductor device according to claim 12, wherein, The sealing member is disposed between the three phases of the power circuit body, forming the first flow path in a tortuous shape.

14. The power semiconductor device according to claim 13, wherein, The exposed surface of the power circuit body within the first flow path has a partition portion disposed between the upper and lower bridge arms of the power circuit body.

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