基板处理装置及使用该装置的基板处理方法
By setting a first electrode and a second electrode in the substrate processing device and providing a voltage greater than that of the first electrode to the second electrode, contaminants in the nozzle unit are removed by using plasma cleaning gas, thus solving the problem of metal contamination in the nozzle unit in the plasma reaction chamber and improving the cleanliness of the nozzle unit.
CN116169050BActive Publication Date: 2026-07-17SYSTEM ENGINEERING MEGA SOLUTION CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SYSTEM ENGINEERING MEGA SOLUTION CO LTD
- Filing Date
- 2022-11-10
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In the nozzle unit within the plasma reaction chamber, the generation of plasma leads to the deposition of metallic contaminants, a problem that is difficult to prevent effectively with existing technologies.
Method used
By setting a first electrode and a second electrode in a substrate processing apparatus and providing a voltage greater than that of the first electrode to the second electrode to form plasma, contaminants in the nozzle unit are removed using plasma cleaning gas, which includes Ar, CF4 and O2, with a flow rate ratio of Ar>CF4>O2.
Benefits of technology
It effectively reduces metal contamination in the nozzle unit and gas injection orifice, improving the cleanliness of substrate processing and the lifespan of the device.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116169050B_ABST
Abstract
本申请提供了一种基板处理方法。所述基板处理方法利用基板处理装置，该基板处理装置包括：第一电极，布置在向腔室的内部提供清洗气体的喷头单元的上部；以及第二电极，布置在支承基板的支承单元的内部，上述基板处理方法包括：向腔室的内部提供清洗气体；向第一电极提供第一大小的电压；以及向第二电极提供大于第一大小的第二大小的电压。
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