A power module and integrated controller

Abstract

A power module and integrated controller are disclosed, relating to the field of electronic device technology. The power module includes a power chip and a second conductive layer, a first insulating layer, another first conductive layer, and a control chip sequentially stacked on the power chip. A conductor is further disposed between the first and second conductive layers, and the first insulating layer covers the side of the conductor. The power module uses the first conductive layer, the first insulating layer, and the second conductive layer as a substrate. The power chip and the control chip are connected to opposite sides of the substrate, respectively. The first and second conductive layers are then connected via the conductor, thereby achieving electrical connection between the power chip and the control chip. Compared to the existing technology that uses metal wires, pins, and a control circuit board for connection, the above power module can solve the interference problem caused by parasitic inductance between the power chip and the control chip.

Description

Technical Field

[0001] This invention relates to the field of electronic device technology, and more specifically, to a power module and integrated controller. Background Technology

[0002] like Figure 1 As shown, the power module requires the integration of two additional components: a heat exchanger 20 and a circuit board 30. This configuration is widely used. In the prior art, the power chip 11 of the power module is mounted on a heat sink 13 via a ceramic substrate 12, and then connected to the control chip 40 on the circuit board 30 via metal wires 14 and pins 15. The heat sink 13 is connected to the heat exchanger 20 via thermally conductive adhesive 16. The circuit board 30 and the power chip 11 must be connected via pins 15 and metal wires 14. The parasitic inductance generated by this distance can easily cause unwanted interference during switching. Summary of the Invention

[0003] The purpose of this invention is to provide a power module and integrated controller that can solve the interference problem caused by parasitic inductance between the power chip and the control chip.

[0004] The embodiments of the present invention are implemented as follows: This invention provides a power module, including a power chip and a second conductive layer, a first insulating layer, a first conductive layer and a control chip sequentially stacked on the power chip. A conductor is also provided between the first conductive layer and the second conductive layer, and the first insulating layer covers the side of the conductor.

[0005] Optionally, a second insulating layer is provided on the side of the power chip away from the second conductive layer, and the other side of the second insulating layer is attached to the heat sink.

[0006] Optionally, the power chip is bonded to the second insulating layer.

[0007] Optionally, a third conductive layer is provided between the power chip and the second insulating layer. One side of the third conductive layer is attached to the power chip and the other side is attached to the second insulating layer. A connector is provided on the side of the power chip. One end of the connector is connected to the second conductive layer and the other end is connected to the third conductive layer.

[0008] Optionally, a connecting piece is provided between the power chip and the second insulating layer. One side of the connecting piece is attached to the power chip and the other side is attached to the second insulating layer. The connecting piece is also provided with protrusions spaced apart from the power chip, and the protrusions are connected to the second conductive layer.

[0009] Optionally, the thickness of the second insulating layer is between 20 μm and 300 μm, the resistivity is higher than 1E7 Ω·m, the thermal conductivity is higher than 3 W / m·K, and the thickness of the heat sink is between 5 mm and 50 mm.

[0010] Optionally, the height difference between the connector and the power chip is less than 50 μm.

[0011] Optionally, the thickness of the first conductive layer is less than 0.3 mm, and the thickness of the second conductive layer is greater than 0.3 mm.

[0012] Optionally, both the first insulating layer and the second insulating layer are thermally conductive insulating films.

[0013] Embodiments of the present invention also provide an integrated controller, including any of the power modules described above.

[0014] The beneficial effects of the embodiments of the present invention include: The power module provided in this invention includes a power chip and a second conductive layer, a first insulating layer, another first conductive layer, and a control chip sequentially stacked on the power chip. A conductor is further disposed between the first and second conductive layers, and the first insulating layer covers the side of the conductor. This power module uses the first conductive layer, the first insulating layer, and the second conductive layer as a substrate. The power chip and the control chip are connected to opposite sides of the substrate, respectively. The first and second conductive layers are then connected via the conductor, thereby achieving an electrical connection between the power chip and the control chip. Compared to the prior art's method of connecting via metal wires, pins, and a control circuit board, this power module can solve the interference problem caused by parasitic inductance between the power chip and the control chip. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 A schematic diagram of the structure of a power module integrating two heat exchangers and a circuit board in the prior art; Figure 2 This is one of the structural schematic diagrams of a power module provided in an embodiment of the present invention; Figure 3 This is a second schematic diagram of the power module provided in an embodiment of the present invention; Figure 4 The third schematic diagram of the power module provided in the embodiment of the present invention.

[0017] Icons: 11-Power chip; 12-Ceramic substrate; 13-Heat sink; 14-Metal wire; 15-Pin; 16-Thermal conductive adhesive; 20-Heat exchanger; 30-Circuit board; 40-Control chip; 100-Power module; 101-Power chip; 102-Second conductive layer; 103-First insulating layer; 104-First conductive layer; 105-Control chip; 106-Conductor; 107-Second insulating layer; 108-Heat sink; 109-Third conductive layer; 110-Connector; 111-Connecting piece; 112-Protrusion. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0019] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0020] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0021] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this invention is in use. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention. In addition, the terms "first," "second," "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0022] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0023] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0024] Please refer to Figure 2 This application provides a power module 100, including a power chip 101 and a second conductive layer 102, a first insulating layer 103, a first conductive layer 104 and a control chip 105 stacked sequentially on the power chip 101. A conductor 106 is also provided between the first conductive layer 104 and the second conductive layer 102, and the first insulating layer 103 is provided to cover the side of the conductor 106.

[0025] The power chip 101 and control chip 105 in the power module 100 are connected via a first conductive layer 104, a first insulating layer 103, and a second conductive layer 102. Specifically, the first insulating layer 103 has a first surface and a second surface facing each other. The first surface is attached to the first conductive layer 104, and the second surface is attached to the second conductive layer 102. The side of the first conductive layer 104 away from the first insulating layer 103 is attached to the control chip 105, and the side of the second conductive layer 102 away from the first insulating layer 103 is attached to the power chip 101. A conductor 106 is also provided between the first conductive layer 104 and the second conductive layer 102. The two opposing surfaces of the conductor 106 are respectively attached to the first conductive layer 104 and the second conductive layer 102, and the insulating layer covers the sides of the conductor 106.

[0026] It should be noted that the number of control chip 105, power chip 101, and conductor 106 can be one, two, or more. When the number of control chip 105, power chip 101, and conductor 106 is two or more, two or more control chips 105 are simultaneously bonded to the first conductive layer 104, two or more power chips 101 are simultaneously bonded to the surface of the second conductive layer 102 away from the first insulating layer 103, and one surface of two or more conductors 106 is simultaneously bonded to the first conductive layer 104, while the opposite surface is simultaneously bonded to the second conductive layer 102.

[0027] The power module 100 described above uses a first conductive layer 104, a first insulating layer 103, and a second conductive layer 102 as a substrate. A power chip 101 and a control chip 105 are connected to opposite sides of the substrate, respectively. A conductor 106 connects the first conductive layer 104 and the second conductive layer 102, thereby achieving an electrical connection between the power chip 101 and the control chip 105. Compared to the existing technology that uses metal wires, pins, and a control circuit board for connection, the power module 100 can solve the interference problem caused by parasitic inductance between the power chip 101 and the control chip 105.

[0028] Optionally, in one possible embodiment of the present invention, the thickness of the first conductive layer 104 is less than 0.3 mm, and the thickness of the second conductive layer 102 is greater than 0.3 mm.

[0029] The first conductive layer 104 is bonded to the control chip 105, on which control circuitry needs to be fabricated. Control circuitry is typically complex, and a thinner layer makes it easier to fabricate complex circuits; therefore, the thickness of the first conductive layer 104 needs to be relatively thin. The second conductive layer 102 is bonded to the power chip 101, on which the main current path needs to be fabricated. The main current path is typically simpler, but requires a thicker substrate to withstand the large current; therefore, the thickness of the second conductive layer 102 needs to be relatively thick. With the thicknesses of the first conductive layer 104 and the second conductive layer 102 within the aforementioned range, it is easier to fabricate the corresponding circuitry on them.

[0030] Please refer to the reference. Figure 3 Optionally, in one possible embodiment of the present invention, the power chip 101 is provided with a second insulating layer 107 on the side away from the second conductive layer 102, and the other side of the second insulating layer 107 is attached to the heat sink 108.

[0031] One side of the power chip 101 is attached to the second conductive layer 102, and the other side is provided with a second insulating layer 107. The surface of the second insulating layer 107 away from the power chip 101 is attached to the heat sink 108. The heat generated by the power chip 101 is transferred to the heat sink 108 through the second insulating layer 107 and then dissipated. It should be noted that, as Figure 2 As shown, the power chip 101 and the second insulating layer 107 can be directly bonded together for heat transfer, as... Figure 3 As shown, the connection can also be achieved through an intermediate structure, as long as the intermediate structure can transfer heat from the power chip 101 to the second insulating layer 107.

[0032] Please refer to Figure 1Compared to existing technologies where the heat sink 13 and heat exchanger 20 are bonded together via thermally conductive adhesive 16, the heat conducted from the power chip 11 must pass through two relatively low thermal conductivity layers—the ceramic layer of the ceramic substrate 12 and the thermally conductive adhesive 16—to reach the heat exchanger 20. Please refer to... Figure 2 and Figure 3 The power module 100 provided in this embodiment reduces the number of high thermal resistance dielectric layers from two to one, and avoids the cost issues associated with ceramic substrates. The second insulating layer 107 can be pre-bonded to the heat sink 108, which avoids the risk of poor heat dissipation due to poor assembly during subsequent assembly.

[0033] Optionally, in one possible embodiment of the present invention, both the first insulating layer 103 and the second insulating layer 107 are thermally conductive insulating films.

[0034] Thermally conductive insulating films can simultaneously provide good insulation and improve thermal conductivity through their thinness. For example, a thermally conductive insulating film is a film of ceramic powder mixed with polymer materials.

[0035] Optionally, in one possible embodiment of the present invention, the first conductive layer 104 and the second conductive layer 102 are metal substrates, such as copper substrates.

[0036] Optionally, in one possible embodiment of the present invention, the thickness of the second insulating layer 107 is between 20 μm and 300 μm, the resistivity is higher than 1E7 Ω·m, and the thermal conductivity is higher than 3 W / m·K, and the thickness of the heat sink 108 is between 5 mm and 50 mm.

[0037] If the thickness of the second insulating layer 107 is less than 20μm, it is prone to voltage breakdown due to insufficient insulation strength; if it is greater than 300μm, heat dissipation will be poor. A thickness between 20μm and 300μm can simultaneously ensure safety and heat dissipation efficiency. The resistivity of the second insulating layer 107 is higher than 1E7Ω·m to ensure the insulation requirements of the high-voltage power module 100, and its thermal conductivity is higher than 3W / m·K for good heat dissipation. The thickness of the heat sink 108 is between 5mm and 50mm, which improves heat dissipation while controlling costs.

[0038] Please refer to Figure 2 Optionally, in one possible embodiment of the present invention, the power chip 101 is bonded to the second insulating layer 107.

[0039] That is, the two opposing surfaces of the second insulating layer 107 are respectively attached to the power chip 101 and the heat sink 108. This structure is suitable for horizontal power chips 101.

[0040] Please refer to Figure 3Optionally, in one possible embodiment of the present invention, a third conductive layer 109 is provided between the power chip 101 and the second insulating layer 107. One side of the third conductive layer 109 is attached to the power chip 101 and the other side is attached to the second insulating layer 107. A connector 110 is provided on the side of the power chip 101. One end of the connector 110 is connected to the second conductive layer 102 and the other end is connected to the third conductive layer 109.

[0041] In this embodiment, the power chip 101 is connected to the second insulating layer 107 through the third conductive layer 109, and the third conductive layer 109 and the second conductive layer 102 are connected through a connector 110 arranged side by side with the power chip 101. This structure is suitable for vertical power chips 101.

[0042] Optionally, in one possible embodiment of the present invention, the height difference between the connector 110 and the power chip 101 is less than 50 μm.

[0043] The height of connector 110 may be greater than or less than the height of power chip 101, but the height difference between the two is limited to within 50μm. This is because, in actual manufacturing, it is impossible to make the surface of connector 110 and the surface of power chip 101 be perfectly planar. The surfaces of connector 110 and power chip 101 that connect to the third conductive layer 109 need to be buffered by connection materials such as solder paste or silver paste. When the height difference is within 50μm, the connection is more stable and the heat dissipation is better.

[0044] Please refer to Figure 4 Optionally, in one possible embodiment of the present invention, a connecting piece 111 is provided between the power chip 101 and the second insulating layer 107. One side of the connecting piece 111 is attached to the power chip 101 and the other side is attached to the second insulating layer 107. The connecting piece 111 is also provided with a protrusion 112 spaced apart from the power chip 101. The protrusion 112 is connected to the second conductive layer 102.

[0045] In this embodiment, the power chip 101 is connected to the second insulating layer 107 via a connecting piece 111. The surface of the connecting piece 111 facing the power chip 101 also has a protrusion 112, and the connecting piece 111 is connected to the second conductive layer 102 via the protrusion 112. This structure eliminates the need for a third conductive layer 109 above the second insulating layer 107 of the heat sink 108. The connecting piece 111 can connect the side of the power chip 101 away from the second conductive layer 102 to the second conductive layer 102 as well. This structure is also applicable to vertically oriented power chips 101.

[0046] This embodiment also provides an integrated controller, including the power module 100 as described above.

[0047] The integrated controller includes the same structure and beneficial effects as the power module 100 in the foregoing embodiments. The structure and beneficial effects of the power module 100 have been described in detail in the foregoing embodiments and will not be repeated here.

[0048] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A power module, characterized in that, The device includes a power chip and a second conductive layer, a first insulating layer, a first conductive layer, and a control chip stacked sequentially on the power chip. The two sides of the first insulating layer are respectively attached to the first conductive layer and the second conductive layer. The second conductive layer is also attached to the power chip. The first conductive layer is also attached to the control chip. A conductor is also provided between the first conductive layer and the second conductive layer. The two opposite surfaces of the conductor are respectively attached to the first conductive layer and the second conductive layer. The first insulating layer is provided to cover the side of the conductor. The power chip has a second insulating layer on the side away from the second conductive layer, and the other side of the second insulating layer is attached to the heat sink. The thickness of the first conductive layer is less than 0.3 mm, and the thickness of the second conductive layer is greater than 0.3 mm; Both the first insulating layer and the second insulating layer are thermally conductive insulating films, which are thin films of ceramic powder mixed with polymer materials.

2. The power module according to claim 1, characterized in that, A third conductive layer is provided between the power chip and the second insulating layer. One side of the third conductive layer is attached to the power chip and the other side is attached to the second insulating layer. A connector is provided on the side of the power chip. One end of the connector is connected to the second conductive layer and the other end is connected to the third conductive layer.

3. The power module according to claim 1, characterized in that, A connecting piece is provided between the power chip and the second insulating layer. One side of the connecting piece is attached to the power chip and the other side is attached to the second insulating layer. The connecting piece is also provided with protrusions spaced apart from the power chip. The protrusions are connected to the second conductive layer.

4. The power module according to claim 1, characterized in that, The thickness of the second insulating layer is between 20 μm and 300 μm, the resistivity is higher than 1E7Ω·m, and the thermal conductivity is higher than 3W / m·K. The thickness of the heat sink is between 5 mm and 50 mm.

5. The power module according to claim 2, characterized in that, The height difference between the connector and the power chip is less than 50 μm.

6. An integrated controller, characterized in that, Includes the power module as described in any one of claims 1 to 5.

Images