助熔剂法生长微结构氮化镓的方法及其应用
By adjusting the raw material ratio and growth conditions of the flux method, conical or frustum-shaped gallium nitride arrays were prepared. Combined with MOCVD/MBE technology to grow quantum wells, the quantum Stark effect problem of gallium nitride devices in the prior art was solved, and high-efficiency LED device fabrication was achieved.
CN116180217BActive Publication Date: 2026-07-17SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
- Filing Date
- 2021-11-26
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Gallium nitride devices grown using the existing flux method exhibit the quantum Stark effect, which reduces the luminous efficiency of optoelectronic devices.
Method used
By adjusting the mass ratio of sodium to gallium in the growth raw materials to 1.5:1-5:1, a conical or frustum-shaped gallium nitride array is grown using the flux method, and a quantum well is grown on it using MOCVD or MBE technology to prepare a microstructured gallium nitride device.
Benefits of technology
The fabrication of gallium nitride-based LED devices with low cost and high efficiency has been achieved, avoiding the quantum Stark effect and improving luminous efficiency.
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Abstract
本发明公开了一种助熔剂法生长微结构氮化镓的方法及其应用。所述助熔剂法生长微结构氮化镓的方法包括：在以助熔剂法液相外延生长氮化镓时，调节生长原料中金属钠与金属镓的质量比为1.5：1‑5：1，以生长形成锥形或锥台形的锥形或锥台形的氮化镓。本发明实施例提供的一种氮化镓器件的制备方法，能够避免量子斯塔克效应并提升LED的发光效率；以及，本发明实施例提供的一种氮化镓器件的制备方法，实现了氮化镓基LED器件的高效率、低成本制备。
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