Semiconductor package structure and method of manufacturing the same
Patent Information
- Application Number
- CN202111419381.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-11-26
- Publication Date
- 2026-08-18
- Estimated Expiration
- 2041-11-26
AI Technical Summary
然而,高介电常数材料通常伴随着较高的信号损耗,由此使得阻抗匹配后,仅能满足较低需求的天线增益
[0040] The semiconductor packaging structure and manufacturing method disclosed herein form a wave-reflecting surface by using a high-dielectric-constant material (dielectric layer) and a relatively low-dielectric-constant medium (air), so that the electromagnetic waves radiated by the antenna can be transmitted in the relatively low-dielectric-constant medium, thereby increasing the antenna gain.
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Figure CN116190978B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, specifically to semiconductor packaging structures and their manufacturing methods. Background Technology
[0002] In AiP (Antenna-in-Package) / AiM (Antenna-in-Module) structures, due to impedance mismatch between the circuitry within the substrate and the antenna components, impedance matching is typically adjusted by placing a high-dielectric-constant material in the antenna's radiation region to increase antenna gain. However, high-dielectric-constant materials are usually accompanied by higher signal loss, thus ensuring that even after impedance matching, only a lower required antenna gain can be achieved. Summary of the Invention
[0003] This disclosure provides a semiconductor packaging structure and a method for manufacturing the same.
[0004] In a first aspect, this disclosure provides a semiconductor packaging structure, including:
[0005] Antenna substrate, including antenna pattern;
[0006] A dielectric layer is disposed on the antenna substrate, and the dielectric layer has a waveguide cavity aligned with the antenna pattern;
[0007] An electromagnetic wave focusing element is located on the radiating side of the antenna pattern, and the electromagnetic wave focusing element is used to focus the electromagnetic waves radiated by the antenna pattern.
[0008] In some alternative implementations, the diameter of the waveguide cavity gradually decreases in the direction of the electromagnetic wave focusing element toward the antenna pattern.
[0009] In some alternative embodiments, the electromagnetic wave focusing element is disposed on the dielectric layer.
[0010] In some alternative embodiments, the dielectric layer has a positioning portion for placing the electromagnetic wave focusing element.
[0011] In some alternative embodiments, the positioning part is provided with an adhesive layer for fixing the electromagnetic wave converging element.
[0012] In some alternative embodiments, the electromagnetic wave focusing element has a curved surface that bulges out in a direction away from the antenna pattern.
[0013] In some alternative implementations, the electromagnetic wave focusing elements are arranged in an array and aligned with the antenna pattern of the array.
[0014] In some alternative implementations, the electromagnetic waves radiated by the antenna pattern undergo far-field interference after passing through the electromagnetic wave focusing element.
[0015] In some alternative embodiments, the dielectric layer has at least one opening that divides the dielectric layer into multiple physically separated portions, each portion of the dielectric layer containing at least one waveguide cavity.
[0016] In some alternative implementations, it also includes:
[0017] The radio frequency chip is located on the side of the antenna substrate away from the dielectric layer.
[0018] In some alternative implementations, it also includes:
[0019] A power management chip is located on the side of the antenna substrate away from the dielectric layer.
[0020] In some alternative implementations, it also includes:
[0021] A passive element is disposed on the side of the antenna substrate away from the dielectric layer.
[0022] In some alternative implementations, it also includes:
[0023] A connector is located on the side of the antenna substrate away from the dielectric layer.
[0024] In some alternative implementations, it also includes:
[0025] The molding layer covers the RF chip and the passive component, and is separated from the connector.
[0026] In some alternative implementations, it also includes:
[0027] An electromagnetic wave shielding layer is formed on the surface of the molding layer and the side surface of the antenna substrate.
[0028] In some alternative embodiments, the dielectric constant of the dielectric layer is greater than the dielectric constant of the dielectric layer in the antenna substrate.
[0029] In some alternative implementations, the sidewall angle of the waveguide cavity is between 17 degrees and 90 degrees.
[0030] In some alternative implementations, the refractive index of the dielectric layer is inversely proportional to the sidewall angle of the waveguide cavity.
[0031] Secondly, this disclosure provides a method for manufacturing a semiconductor packaging structure, including:
[0032] An antenna substrate including an antenna pattern is formed;
[0033] A dielectric layer is formed on the antenna substrate, and a waveguide cavity aligned with the antenna pattern is formed on the dielectric layer;
[0034] An electromagnetic wave focusing element is disposed on the dielectric layer so that the electromagnetic wave focusing element is aligned with the antenna pattern in the waveguide cavity.
[0035] In some alternative embodiments, forming a dielectric layer on the antenna substrate and forming a waveguide cavity on the dielectric layer aligned with the antenna pattern includes:
[0036] A dielectric layer with a waveguide cavity is formed using a pre-fabricated mold.
[0037] In some alternative embodiments, forming a dielectric layer on the antenna substrate and forming a waveguide cavity on the dielectric layer aligned with the antenna pattern includes:
[0038] A dielectric layer is formed on the antenna substrate;
[0039] The waveguide cavity is formed on the dielectric layer using a laser ablation process.
[0040] The semiconductor packaging structure and manufacturing method disclosed herein form a wave-reflecting surface by using a high-dielectric-constant material (dielectric layer) and a relatively low-dielectric-constant medium (air), so that the electromagnetic waves radiated by the antenna can be transmitted in the relatively low-dielectric-constant medium, thereby increasing the antenna gain. Attached Figure Description
[0041] Other features, objects, and advantages of this disclosure will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:
[0042] Figure 1 This is a first structural schematic diagram of a semiconductor packaging structure according to an embodiment of the present disclosure;
[0043] Figure 2 yes Figure 1 The diagram shows a top view of the semiconductor package structure.
[0044] Figure 3 This is a second structural schematic diagram of a semiconductor packaging structure according to an embodiment of the present disclosure;
[0045] Figure 4 yes Figure 3 The diagram shows a top view of the semiconductor package structure.
[0046] Figure 5 This is a comparative schematic diagram showing the antenna gain effect when the waveguide cavity in the semiconductor packaging structure according to the embodiments of this disclosure is cylindrical and frustum-shaped.
[0047] Figure 6 This is a schematic diagram comparing the direction of electromagnetic waves radiated by antenna patterns when the waveguide cavity in the semiconductor packaging structure according to the embodiments of this disclosure is cylindrical and inverted frustum.
[0048] Figures 7 to 12 This is a schematic diagram of the manufacturing process of a semiconductor packaging structure according to an embodiment of the present disclosure.
[0049] Symbol explanation:
[0050] 1-Antenna substrate, 11-Antenna pattern, 2-Dielectric layer, 21-Waveguide cavity, 22-Positioning part, 23-Opening, 3-Electromagnetic wave focusing element, 4-Adhesive layer, 5-Connector, 6-RF chip, 7-Power management chip, 8-Passive component, 9-Electromagnetic wave shielding layer, 10-Molding layer, 12-Lens, α-Side wall corner. Detailed Implementation
[0051] The specific embodiments of this disclosure will be described below with reference to the accompanying drawings and examples. Those skilled in the art can easily understand the technical problems solved by this disclosure and the resulting technical effects through the content described herein. It is understood that the specific embodiments described herein are merely illustrative of the relevant invention and not intended to limit the invention. Furthermore, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.
[0052] It should be noted that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art in understanding and reading the content described herein, and are not intended to limit the implementation conditions of this disclosure. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, without affecting the effectiveness and purpose of this disclosure, should still fall within the scope of the technical content disclosed herein. Furthermore, terms such as "above," "first," "second," and "a" used in this specification are merely for clarity of description and are not intended to limit the scope of this disclosure. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of this disclosure's implementation.
[0053] It should be readily understood that the meanings of “on,” “above,” and “on top of” in this disclosure should be interpreted in the broadest sense, such that “on” means not only “directly on something,” but also “on something” including intermediate components or layers existing between the two.
[0054] Furthermore, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” and “upper” may be used in this disclosure to describe the relationship of one element or component to another element or component shown in the accompanying drawings. In addition to the orientations described in the figures, the spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90° or otherwise), and the spatial relative descriptive terms used in this disclosure may be interpreted accordingly.
[0055] Furthermore, the embodiments and features described herein can be combined with each other, unless otherwise specified. This disclosure will now be described in detail with reference to the accompanying drawings and embodiments.
[0056] Figure 1 This is a first structural schematic diagram of a semiconductor packaging structure according to an embodiment of the present disclosure. Figure 2 yes Figure 1 A top view of the semiconductor package structure shown. Figure 1 and Figure 2 As shown, the semiconductor package structure includes an antenna substrate 1, a dielectric layer 2, an electromagnetic wave focusing element 3, a connector 5, an RF chip 6, a power management chip 7, a passive component 8, an electromagnetic wave shielding layer 9, and a molding layer 10. The dielectric layer 2 can be disposed on the antenna substrate 1. The dielectric layer 2 can have a waveguide cavity 21 aligned with the antenna pattern 11. The electromagnetic wave focusing element 3 can be located on the radiating side of the antenna pattern 11. The RF chip 6 can be disposed on the side of the antenna substrate 1 away from the dielectric layer 2. The power management chip 7 can be disposed on the side of the antenna substrate 1 away from the dielectric layer 2. The passive component 8 can be disposed on the side of the antenna substrate 1 away from the dielectric layer 2.
[0057] In this embodiment, the dielectric layer 2 can be made of a high dielectric constant material, such as polymer materials like epoxy resin, polyimide, BT (Bismaleimide Triazine) resin, FR-4 resin (FR-4 is the NEMA (National Electrical Manufacturers Association) grade name for glass fiber reinforced epoxy laminates; FR-4 is a composite material composed of woven glass fiber fabric and flame-retardant epoxy resin adhesive), etc. In one embodiment, the dielectric constant of the dielectric layer 2 can be higher than the dielectric constant of the dielectric material in the antenna substrate 1. The dielectric constant of the dielectric layer 2 is generally between 4 and 20.
[0058] In this embodiment, the diameter of the waveguide cavity 21 gradually decreases in the direction from the electromagnetic wave focusing element 3 toward the antenna pattern 11. The sidewalls of the waveguide cavity 21 are inclined relative to the upper surface of the antenna substrate 1. Electromagnetic waves radiated by the antenna propagate in the waveguide cavity 21 (air has a low dielectric constant), which can increase the antenna gain.
[0059] In this embodiment, the refractive index of the dielectric layer 2 is inversely proportional to the sidewall angle α of the waveguide cavity 21. The larger the dielectric constant of the dielectric layer 2, the larger its refractive index and the smaller the sidewall angle α. For example, when the dielectric constant of the dielectric layer 2 is 20, total internal reflection can occur at a sidewall angle α between 17 and 90 degrees. When the dielectric constant of the dielectric layer 2 is 4, total internal reflection can occur at a sidewall angle α between 47 and 90 degrees. By designing the sidewall angle α to form a total reflection surface, electromagnetic waves undergo total internal reflection within the waveguide cavity 21, reducing energy loss through penetration or scattering.
[0060] In this embodiment, the electromagnetic wave focusing element 3 can be used to focus the electromagnetic waves radiated by the antenna pattern 11, thereby reducing electromagnetic wave scattering and increasing concentration. The electromagnetic wave focusing element 3 may have a convex curved surface in a direction away from the antenna pattern 11. The electromagnetic wave focusing element 3 may be a convex lens. The electromagnetic wave focusing element 3 may be arranged in an array and aligned with the array of antenna patterns 11. The electromagnetic waves radiated by the antenna pattern 11 can be far-field interfered with by the electromagnetic wave focusing element 3.
[0061] In this embodiment, the electromagnetic wave focusing element 3 can be disposed on the dielectric layer 2. Specifically, the dielectric layer 2 can have a positioning portion 22. The positioning portion 22 can be a groove, notch, or notch. The positioning portion 22 can be a ring-shaped design. The positioning portion 22 can be used to place / fix the electromagnetic wave focusing element 3. The positioning portion 22 can effectively control the offset of the electromagnetic wave focusing element 3 during placement. Further, an adhesive layer 4 can be provided on the positioning portion 22. The adhesive layer 4 can be used to fix the electromagnetic wave focusing element 3.
[0062] In this embodiment, the antenna substrate 1 includes a circuit layer and a dielectric material between the circuit layers. The circuit layer may include an antenna pattern 11. The antenna pattern 11 may be exposed on the surface of the antenna substrate 1. The antenna pattern 11 may also be covered by a protective layer. The protective layer may be a solder resist layer or an electroless nickel immersion gold (ENIG) layer, etc. The operating frequency of the antenna pattern 11 may be between 30 and 300 GHz, or even higher. The antenna pattern 11 may operate simultaneously in multiple frequency bands, such as 28 GHz and 39 GHz. In one embodiment, the dielectric layer 2 may cover part of the antenna pattern 11, or the antenna pattern 11 may be completely exposed from the dielectric layer 2. The antenna pattern 11 may be arranged in an array.
[0063] In this embodiment, connector 5 can be used for external connection, such as a board-to-board connector (BTB) or a hot bar.
[0064] In this embodiment, the molding layer 10 can encapsulate the RF chip 6, the power management chip 7, and the passive components 8, providing protection and moisture resistance. The molding layer 10 is formed from various molding compounds. For example, molding compounds may include epoxy resin, filler, catalyst, pigment, release agent, flame retardant, coupling agent, hardener, low stress absorber, adhesion promoter, ion trapping agent, etc.
[0065] In this embodiment, the electromagnetic wave shielding layer 9 can be disposed on the surface of the molding layer 10 and the side surface of the antenna substrate 1. The electromagnetic wave shielding layer 9 can prevent electromagnetic wave interference, improve signal quality, and increase antenna gain.
[0066] In this embodiment, the passive element 8 may be, for example, a capacitor, a resistor, an inductor, etc.
[0067] Figure 3 This is a second structural schematic diagram of a semiconductor packaging structure according to an embodiment of the present disclosure. Figure 1 The difference in the semiconductor packaging structures shown is that, Figure 3 The dielectric layer 2 in the semiconductor package structure shown may have at least one opening 23. Figure 4yes Figure 3 A top view of the semiconductor package structure shown. Figure 4 As shown, at least one opening 23 can divide the dielectric layer 2 into multiple physically separated parts, which can reduce the degree of mismatch in thermal expansion coefficients and disperse pressure. In addition, it can also save materials and reduce costs.
[0068] In one embodiment, the dielectric layer 2 of multiple portions each includes at least one waveguide cavity 21. The waveguide cavities 21 may be arranged in an array, separated from each other by the dielectric layer 2.
[0069] In one embodiment, when the antenna pattern 11 is covered by a protective layer, the opening 23 can expose the protective layer of the antenna substrate 1.
[0070] Figure 5 This is a comparative schematic diagram showing the antenna gain effect when the waveguide cavity 21 in the semiconductor packaging structure according to the embodiments of this disclosure is cylindrical and inverted frustum-shaped. Figure 5 In Figure (a), the waveguide cavity 21 is shaped like an inverted frustum, and the sidewalls of the waveguide cavity 21 are inclined relative to the upper surface of the antenna substrate 1. Figure 5 In Figure (b), the waveguide cavity 21 is cylindrical, and the sidewall of the waveguide cavity 21 is perpendicular to the upper surface of the antenna substrate 1. Figure 5 Figure (a) relative to Figure 5 Figure (b) shows that the directivity is better and the antenna gain is increased.
[0071] Figure 6 This is a schematic diagram comparing the direction of electromagnetic waves radiated by the antenna pattern 11 when the waveguide cavity 21 in the semiconductor packaging structure according to the embodiments of this disclosure is cylindrical and inverted frustum. Figure 6 In Figure (a), the waveguide cavity 21 is shaped like an inverted frustum, making it difficult and costly to control the radius of curvature in the lens 12. Furthermore, the lack of a total reflection surface to concentrate electromagnetic waves makes it easy for electromagnetic waves to scatter within the cavity. Figure 6 In Figure (b), the waveguide cavity 21 is cylindrical. It is formed by the difference in dielectric constant between the dielectric layer 2 and air. By designing the angle α of the sidewall of the dielectric layer 2, electromagnetic waves are approximately reflected or totally reflected within the waveguide cavity 21, reducing energy loss due to penetration or scattering. The electromagnetic wave energy is then collected and transmitted through the electromagnetic wave focusing element 3.
[0072] Figures 7 to 12 This is a schematic diagram of the manufacturing process of a semiconductor packaging structure according to an embodiment of the present disclosure.
[0073] like Figure 7As shown, an antenna substrate 1 including an antenna pattern 11 is formed. Then, an RF chip 6, a power management chip 7, and a passive component 8 are disposed adjacently on the side of the antenna substrate 1 away from the dielectric layer 2. A molding layer 10 is then formed to cover the RF chip 6, the power management chip 7, and the passive component 8. Finally, an electromagnetic wave shielding layer 9 is formed on the surface of the molding layer 10 and the side surface of the antenna substrate 1.
[0074] A dielectric layer 2 is formed on the antenna substrate 1, and a waveguide cavity 21 aligned with the antenna pattern 11 is formed on the dielectric layer 2. First method: as shown... Figure 8 As shown, a dielectric layer 2 is first formed on the antenna substrate 1. (As illustrated...) Figure 9 As shown, a waveguide cavity 21 and a positioning part 22 are then formed on the dielectric layer 2 using a laser ablation process. The second method: as shown... Figure 9 As shown, a dielectric layer 2 having a waveguide cavity 21 and a positioning part 22 is formed using a pre-made mold.
[0075] like Figure 10 As shown, an adhesive layer 4 is formed on the positioning part 22.
[0076] like Figure 11 As shown, the electromagnetic wave focusing element 3 is placed on the positioning part 22 of the dielectric layer 2, and the electromagnetic wave focusing element 3 is fixed by the adhesive layer 4, so that the electromagnetic wave focusing element 3 is aligned with the antenna pattern 11 in the waveguide cavity 21.
[0077] like Figure 12 As shown, a connector 5 is provided on the side of the antenna substrate 1 away from the dielectric layer 2.
[0078] The semiconductor packaging structure and manufacturing method disclosed herein form a wave-reflecting surface by using a high-dielectric-constant material (dielectric layer 2) and a relatively low-dielectric-constant medium (air), so that the electromagnetic waves radiated by the antenna can be transmitted in the relatively low-dielectric-constant medium, thereby increasing the antenna gain.
[0079] Although this disclosure has been described and illustrated with reference to specific embodiments thereof, such descriptions and illustrations are not limiting of this disclosure. It will be readily understood by those skilled in the art that various changes can be made and equivalent elements can be substituted within embodiments without departing from the true spirit and scope of this disclosure as defined by the appended claims. Illustrations may not be drawn to scale. Differences may exist between the technical representation in this disclosure and actual equipment due to variables in the manufacturing process, etc. Other embodiments of this disclosure may exist that are not specifically described. The description and drawings should be considered illustrative rather than restrictive. Modifications can be made to adapt particular circumstances, materials, composition, methods, or processes to the objectives, spirit, and scope of this disclosure. All such modifications fall within the scope of the appended claims. While the methods disclosed in this disclosure have been described with reference to specific operations performed in a particular order, it should be understood that these operations can be combined, subdivided, or reordered to form equivalent methods without departing from the teachings of this disclosure. Therefore, unless specifically indicated in this disclosure, the order and grouping of operations do not limit this disclosure.
Claims
1. A semiconductor package structure, comprising: Antenna substrate, including antenna pattern; An electromagnetic wave focusing element is located on the radiating side of the antenna pattern. The electromagnetic wave focusing element is used to focus the electromagnetic waves radiated by the antenna pattern. A dielectric layer is disposed on the antenna substrate, the dielectric layer having a waveguide cavity aligned with the antenna pattern, the diameter of the waveguide cavity gradually decreasing in the direction of the electromagnetic wave focusing element toward the antenna pattern; The electromagnetic wave focusing element is disposed on the dielectric layer; The dielectric layer has a positioning portion, which is a groove, notch, or notch, and the positioning portion is used to place the electromagnetic wave focusing element. The positioning part is provided with an adhesive layer, which is used to fix the electromagnetic wave converging element, and the electromagnetic wave undergoes total reflection in the waveguide cavity.
2. The semiconductor packaging structure according to claim 1, wherein, The electromagnetic wave focusing element has a convex curved surface that protrudes in a direction away from the antenna pattern.
3. The semiconductor packaging structure according to claim 1, wherein, The electromagnetic wave focusing element is arranged in an array and aligned with the antenna pattern of the array.
4. The semiconductor packaging structure according to claim 3, wherein, The dielectric layer has at least one opening, which divides the dielectric layer into multiple physically separated portions, each of which contains at least one waveguide cavity.
5. The semiconductor packaging structure according to claim 1, further comprising: The radio frequency chip is disposed on the side of the antenna substrate away from the dielectric layer; A connector is located on the side of the antenna substrate away from the dielectric layer; A passive element is disposed on the side of the antenna substrate away from the dielectric layer; A molding layer covers the RF chip and the passive component, and is separated from the connector; An electromagnetic wave shielding layer is formed on the surface of the molding layer and the side surface of the antenna substrate.
6. The semiconductor packaging structure according to claim 1, wherein, The dielectric constant of the dielectric layer is greater than the dielectric constant of the dielectric layer in the antenna substrate.
7. A method for manufacturing a semiconductor package structure as described in claim 1, comprising: An antenna substrate including an antenna pattern is formed; A dielectric layer is formed on the antenna substrate, and a waveguide cavity aligned with the antenna pattern is formed on the dielectric layer; An electromagnetic wave focusing element is disposed on the dielectric layer so that the electromagnetic wave focusing element is aligned with the antenna pattern in the waveguide cavity.
8. The method according to claim 7, wherein, The process of forming a dielectric layer on the antenna substrate and forming a waveguide cavity on the dielectric layer aligned with the antenna pattern includes: A dielectric layer with a waveguide cavity is formed using a pre-fabricated mold.
9. The method according to claim 7, wherein, The process of forming a dielectric layer on the antenna substrate and forming a waveguide cavity on the dielectric layer aligned with the antenna pattern includes: A dielectric layer is formed on the antenna substrate; The waveguide cavity is formed on the dielectric layer using a laser ablation process.
Citation Information
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