A method for preparing a piezoelectric thin film with good stability and flexibility
By adding PBDMS@ZnSnO3 to P(VDF-TrFE) piezoelectric films, the problem of insufficient film stability was solved, and a piezoelectric film with excellent stability and flexibility was prepared, which is suitable for motion sensing and wearable devices.
CN116193967BActive Publication Date: 2026-05-26ZHEJIANG SCI-TECH UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHEJIANG SCI-TECH UNIV
- Filing Date
- 2022-12-12
- Publication Date
- 2026-05-26
Abstract
This invention relates to the field of wearable devices, and discloses a method for preparing a piezoelectric thin film with good stability and flexibility. The method uses P(VDF-TrFE) as the raw material and PBDMS@ZnSnO3 as the blend, and obtains a PBDMS@ZnSnO3 / P(VDF-TrFE) piezoelectric thin film after coating, annealing, and polarization. The piezoelectric thin film prepared by this invention not only has excellent stability, conductivity, and sensitivity, but also possesses outstanding flexibility and impact resistance, and can be used in motion sensing technology, lightweight wearable piezoelectric sensors, hydrophones, and other fields.
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