Electronic device

Abstract

An electronic device includes a first sensing circuit, a second sensing circuit, and a power line. The first sensing circuit includes a first sensing unit and a first transistor, and a first end of the first sensing unit is coupled to a control end of the first transistor. The second sensing circuit includes a second sensing unit and a second transistor, and a first end of the second sensing unit is coupled to a control end of the second transistor. A first end of the first transistor and a first end of the second transistor are coupled to the power line.

Description

Technical Field

[0001] This invention relates to an electronic device, and more particularly to an electronic device having a sensing circuit. Background Technology

[0002] As electronic devices continue to improve their functionality, they can meet a wide variety of user needs and have become essential tools in people's lives. In existing electronic devices with display and sensing functions, although it is currently possible to place light-sensing elements in the display area to detect images, placing the sensing circuits used to control each sensing element in the display area would significantly reduce the pixel aperture ratio due to the increased number of signal lines or traces, thus affecting display quality. Summary of the Invention

[0003] An embodiment of the present invention provides an electronic device including a first sensing circuit, a second sensing circuit, and a power line. The first sensing circuit includes a first sensing unit and a first transistor, with a first terminal of the first sensing unit coupled to a control terminal of the first transistor. The second sensing circuit includes a second sensing unit and a second transistor, with a first terminal of the second sensing unit coupled to a control terminal of the second transistor. The first terminals of the first transistor and the first terminals of the second transistor are coupled to the power line.

[0004] Another embodiment of the present invention provides an electronic device including a pixel circuit and a sensing circuit. The pixel circuit includes a first transistor and a signal line, wherein the signal line is coupled to a first terminal of the first transistor. The sensing circuit includes a sensing unit, a second transistor, and a third transistor, wherein a first terminal of the sensing unit is coupled to a control terminal of the second transistor, a second terminal of the second transistor is coupled to a first terminal of the third transistor, and a second terminal of the third transistor is coupled to the signal line.

[0005] Another embodiment of the present invention provides an electronic device including a sensing circuit and a touch circuit. A first terminal of the sensing unit is coupled to a control terminal of a first transistor. The touch circuit includes a touch signal line, and the touch signal line is coupled to a second terminal of the sensing unit. Attached Figure Description

[0006] Figure 1 The diagram shown is a circuit diagram of an electronic device according to a first embodiment of the present invention.

[0007] Figure 2 The diagram shown is a schematic diagram of a demultiplexing circuit according to some embodiments of the present invention.

[0008] Figure 3 The diagram shown is a signal timing diagram of a demultiplexing circuit.

[0009] Figure 4 The diagram shown is a top view of the display area of ​​the electronic device according to the first embodiment of the present invention.

[0010] Figure 5 The electronic device shown is an example of the first embodiment of the present invention. Figure 4 Schematic diagrams of the cross-sectional structures along sections A-A', B-B', C-C', D-D', and E-E'.

[0011] Figure 6 The diagram shown is a top view of an electronic device according to a variation of the first embodiment of the present invention.

[0012] Figure 7 The electronic device shown is a variation of the first embodiment of the present invention. Figure 6 Schematic diagram of the cross-sectional structure along sections F-F', G-G', H-H', I-I', and J-J'.

[0013] Figure 8 The diagram shown is a circuit diagram of an electronic device according to a second embodiment of the present invention.

[0014] Figure 9 The diagram shows the timing of the signals supplied to the touch signal line.

[0015] Figure 10 The diagram shown is a top view of the display area of ​​the electronic device according to a second embodiment of the present invention.

[0016] Figure 11 The electronic device shown is a second embodiment of the present invention. Figure 10 Schematic diagram of the cross-sectional structure along sections K-K', L-L', M-M', N-N' and P-P'.

[0017] Figure 12 The diagram shown is a top view of the display area of ​​an electronic device according to a variation of the second embodiment of the present invention.

[0018] Figure 13 The electronic device shown is a variation of the second embodiment of the present invention. Figure 12 Schematic diagram of the cross-sectional structure along sections Q-Q', R-R', S-S', and T-T'.

[0019] Figure 14 The diagram shown is a circuit diagram of an electronic device according to a third embodiment of the present invention.

[0020] Explanation of reference numerals in the attached figures: 1, 1a, 2, 2a, 3 – Electronic devices; 12 – Sensing circuit; 121 – Sensing unit; 122, 123, 124, 26c – Transistors; 14, 20 – Power lines; 26, 261, 262, 263 – Pixel circuits; 26a, 26b – Capacitors; 16, 18, 22, 26d, 26e – Signal lines; 28 – Touch circuit; 281 – Touch signal line; 30 – Demultiplexing circuit; 32, 321, 322, 323, 324 – Transistor clusters; 32a – n-type crystal. Tube; 32b – p-type transistor; 34 – substrate; 36 – semiconductor layer; 36a, 36b, 36c – semiconductor blocks; 38, 42, 46, 50, 52, 56, 60 – insulating layers; 40, 44, 48, 54 – metal layers; 40a, 44a, 44b, 44c, 44d, 48a, 48b, 44e, 48c – electrodes; 42a, 42b, 42c, 42d, 42e, 42f, 42g, 46a, 46b, 46c, 46d, 50a, 56a, 56b, 42h 46e, 52a – Perforation; 58, 62 – Transparent conductive layer; 58a – Connecting electrode; 58b – Common electrode; 64 – Buffer layer; 66 – Light-shielding layer; 66a – Light-shielding pattern; 70 – Readout line; D1 – First direction; D2 – Second direction; DT – Display drive period; H1, H2, H3, H4 – Forward switching signals; HV – High voltage level; LV – Low voltage level; OP – Opening; PR – Peripheral area; R1 – Opening area; S1, S2 – Signal terminals; SR – Sensing area; ST – Sensing period; Stb ~ Signal; T1 ~ First time period; T2 ~ Second time period; T3 ~ Third time period; TS ~ Touch signal; TT ~ Touch time period; V ~ Voltage; VD ~ Top view direction; XH1, XH2, XH3, XH4 ~ Reverse switch signal; A-A', B-B', C-C', D-D', E-E', F-F', G-G', H-H', I-I', J-J', K-K', L-L', M-M', N-N', P-P', Q-Q', R-R', S-S', T-T', U-U' ~ Profile. Detailed Implementation

[0021] The present invention will be described in detail below with reference to specific embodiments and accompanying drawings. To make the invention clearer and easier to understand, the accompanying drawings are simplified schematic diagrams, and the elements therein may not be drawn to scale. Furthermore, the number and dimensions of the elements in the drawings are merely illustrative and are not intended to limit the scope of the invention.

[0022] Throughout this specification and claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same elements, and this document is not intended to distinguish between elements that have the same function but different names. In the following specification and claims, words such as "containing" and "comprising" are open-ended terms and should therefore be interpreted as "containing but not limited to...".

[0023] The use of ordinal numbers, such as "first," "second," etc., in the specification and claims to modify elements of a claim does not in itself imply or represent any prior ordinal number of the claimed element, nor does it represent the order of one claimed element with another, or the order of manufacturing processes. The use of these ordinal numbers is solely to clearly distinguish one claimed element with a given name from another claimed element with the same name. Therefore, a first element mentioned in the specification may be referred to as a second element in the claims.

[0024] The directional terms used in the following embodiments, such as up, down, left, right, front, or back, are merely for reference to the accompanying drawings. Therefore, the directional terms used are for illustrative purposes and not for limiting the invention. It should be understood that elements specifically described or illustrated may exist in various forms well known to those skilled in the art. In this document, when an element is referred to as "overlapping" with another element, it should be understood that the element partially or completely overlaps with the other element.

[0025] Furthermore, when an element or membrane is referred to as being on or above another element or membrane, it should be understood that the element or membrane is directly located on the other element or membrane, or that there may be other elements or membranes (not directly) between them. Conversely, when an element or membrane is referred to as being "directly" on another element or membrane, it should be understood that there are no inserted elements or membranes between them.

[0026] When the text refers to a component as "electrically connected" or "coupled" to another component, it may include situations where "there may be other components between the component and the other component that electrically connect them," or situations where "there are no other components between the component and the other component that directly electrically connect them." If the text refers to a component as "directly electrically connected" or "directly coupled" to another component, it refers to situations where "there are no other components between the component and the other component that directly electrically connect them."

[0027] In this text, the term "about" typically indicates a range within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value. The given quantity is approximate, meaning that the meaning of "about" can be implied even without a specific mention of it.

[0028] It should be understood that the features described below can be replaced, recombined, or mixed in several different embodiments to complete other embodiments without departing from the spirit of the invention. Features between embodiments can be arbitrarily mixed and combined as long as they do not violate the spirit of the invention or conflict with it.

[0029] In this invention, the length, thickness and width can be measured using an optical microscope, an electron microscope or other methods, but are not limited thereto.

[0030] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It is understood that these terms, for example, as defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant art and this invention, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of this invention.

[0031] In this invention, the electronic device may have sensing capabilities and may selectively include display, light sensing, image sensing, touch control, antenna, other suitable functions, or combinations thereof, but is not limited thereto. In some embodiments, the electronic device may include a splicing device, but is not limited thereto. The electronic device may include liquid crystal molecules (LCmolecule), light-emitting diodes (LEDs), or quantum dot (QD) materials, fluorescent materials, phosphorescent materials, other suitable materials, or combinations of any two of the above, but is not limited thereto. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), micro-LEDs, sub-millimeter light-emitting diodes (mini-LEDs), or quantum dot light-emitting diodes (QLEDs or QDLEDs), but are not limited thereto. Furthermore, the electronic device may be, for example, a color display device, a monochrome display device, or a grayscale display device. The shape of the electronic device may be, for example, rectangular, circular, polygonal, a shape with curved edges, a curved surface, or other suitable shapes. The electronic device may optionally have peripheral systems such as a driving system, a control system, a light source system, etc.

[0032] Please refer to Figure 1 The diagram shown is a circuit schematic of an electronic device according to a first embodiment of the present invention. Figure 1As shown, the electronic device 1 may have a sensing area SR and include at least one sensing circuit 12 and at least one power line 14 disposed in the sensing area SR. Figure 1 In this description, an electronic device 1 may include two sensing circuits 12 as an example, but is not limited thereto. The two sensing circuits 12 may, for example, be adjacent to each other, but are not limited thereto. Each sensing circuit 12 may include a sensing unit 121 and a transistor 122, wherein a first terminal of the sensing unit 121 may be coupled to a control terminal of the transistor 122, such that the transistor 122 can be used to amplify the signal sensed by the sensing unit 121. The transistor 122 may, for example, serve as an amplifying transistor in the sensing circuit 12, and the first terminal, second terminal, and control terminal of the transistor 122 may, for example, be the drain (or source), source (or drain), and gate of the transistor 122, respectively, but are not limited thereto. Figure 1 In the embodiments, "coupled" may mean "electrical connection", but is not limited thereto. In addition, the first ends of the transistors 122 of the two sensing circuits 12 can be coupled to the same power line 14, thus saving the number of power lines 14 in the electronic device 1.

[0033] In some embodiments, the sensing unit 121 may be used, for example, to detect light, such as X-rays, visible light, infrared light, or other suitable light, but is not limited thereto. The sensing unit 121 may include, for example, a photodiode, other photosensitive elements that can be used with fingerprint sensors, iris sensors, retinal sensors, face sensors, vein sensors, motion sensors, gesture sensors, or other suitable sensors, or combinations of at least two of the above, but is not limited thereto. In other embodiments, the sensing unit 121 may include touch sensing. In some embodiments, when the electronic device 1 includes a plurality of sensing circuits 12 arranged in an array, the electronic device 1 can detect images. The sensing area SR may be, for example, an area where the electronic device 1 can detect images or an area covered by the sensing circuits 12, but is not limited thereto.

[0034] exist Figure 1 In some embodiments, the sensing circuits 12 may be arranged, for example, along a first direction D1, and the power line 14 may extend along a second direction D2 and be disposed between the sensing circuits 12, but is not limited thereto. The first direction D1 may be, for example, perpendicular to the second direction D2, but is not limited thereto. In some embodiments, two of the plurality of sensing circuits 12 may be symmetrically disposed on both sides of the power line 14, but is not limited thereto.

[0035] Furthermore, in Figure 1In this embodiment, each sensing circuit 12 may further include transistors 123 and 124, and the electronic device 1 may further include signal line 16, signal line 18, two power lines 20, and two signal lines 22. A first terminal of transistor 123 may be coupled to the control terminal of transistor 122 and the first terminal of sensing unit 121, and the control terminal and second terminal of transistor 123 may be coupled to signal line 16 and power line 20, respectively. Signal line 16 may, for example, provide a reset signal, allowing transistor 123 to be used to reset the voltage at the control terminal of transistor 122. Transistor 123 may, for example, serve as a reset transistor in sensing circuit 12, and the first terminal, second terminal, and control terminal of transistor 123 may, for example, be a source (or drain), drain (or source), and gate, but are not limited thereto. A first terminal of transistor 124 may be coupled to the second terminal of transistor 122, and the control terminal of transistor 124 may be coupled to signal line 18, allowing transistor 124 to output the signal generated by sensing unit 121 to another signal line (e.g., under the control of signal line 18). Figure 1 (Signal line 26e shown). Transistor 124 may be, for example, a readout transistor in sensing circuit 12, and the first terminal, second terminal, and control terminal of transistor 124 may be, for example, a source (or drain), a drain (or source), and a gate, but are not limited thereto. The second terminal of sensing unit 121 may be coupled to signal line 22, and in some embodiments, signal line 22 may provide a bias voltage. The first and second terminals of sensing unit 121 may be, for example, the cathode and anode of a photodiode, but are not limited thereto. Figure 1 In some embodiments, signal lines 16 and 18 may extend along a first direction D1, and power lines 20 and 22 may extend along a second direction D2, crossing signal lines 16 and 18. In some embodiments, signal line 22 may be disposed between power lines 20 and 14, such that power lines 20 coupled to different sensing circuits 12 may be symmetrically disposed on both sides of power line 14, and signal lines 22 coupled to different sensing circuits 12 may be symmetrically disposed on both sides of power line 14, but this is not limited to this. In some embodiments, the sensing circuit 12 may not be... Figure 1 The number of transistors, their connection method, and / or connection method with the sensing unit can be adjusted as needed, and / or other suitable components can be added to the sensing circuit, such as a capacitor connected in parallel between the cathode and anode of the sensing unit 121, but this is not a limitation. In some embodiments, the number of sensing circuits 12 in the electronic device 1 is not limited to the number of transistors shown. Figure 1 As shown, the circuit may include multiple sensing circuits 12. In this case, the number of signal lines 16, 18, 20, and 22 may be adjusted according to the number of sensing circuits 12.

[0036] like Figure 1As shown, the electronic device 1 may further include at least one pixel circuit 26 disposed in the sensing area SR and used to display images. Figure 1 In some embodiments, the electronic device 1 may include, but is not limited to, a plurality of pixel circuits 26. In other words, the sensing area SR of the electronic device 1 may also have the function of displaying images and serve as the display area of ​​the electronic device 1. For example, one sensing circuit 12 may correspond to three pixel circuits 26 and be located on one side of the pixel circuits 26. In some embodiments, when the pixel circuits 26 are arranged in an array, the sensing circuit 12 may be disposed between adjacent rows of pixel circuits 26.

[0037] exist Figure 1 In some embodiments, pixel circuit 26 may correspond, for example, to a pixel or sub-pixel of electronic device 1. When electronic device 1 can display a color image, pixel circuit 26 may include, for example, a plurality of pixel circuits 261, a plurality of pixel circuits 262, and a plurality of pixel circuits 263, each corresponding to a sub-pixel displaying a different color. For example, pixel circuits 261, 262, and 263 may correspond to a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively. Therefore, pixel circuits 261, 262, and 263 may correspond to a pixel capable of displaying white, but are not limited thereto. In some embodiments, pixel circuits 261, 262, and 263 may also correspond to sub-pixels of different colors. Pixel circuits 261, 262, and 263 may be arranged alternately in sequence along a first direction D1, for example, but are not limited thereto.

[0038] Figure 1 The electronic device 1 is exemplified by a liquid crystal display device, but is not limited thereto. The pixel circuit 26 of the electronic device 1 may include transistors 26c and signal lines 26e. The second terminal of transistor 124 of sensing circuit 12 can be coupled to the signal line 26e of a corresponding pixel circuit 26, such that the second terminal of transistor 124 and the corresponding transistor 26c can be coupled to the same signal line 26e. Therefore, transistor 124 of sensing circuit 12 and transistor 26c of the corresponding pixel circuit 26 can share the same signal line 26e to transmit signals, thereby reducing the number of signal lines or traces disposed in the sensing area SR, and thus improving the aperture ratio of the pixel or sub-pixel. For example, when two adjacent sensing circuits 12 are symmetrically disposed on both sides of power line 14, and each corresponds to three pixel circuits 26, the transistor 124 of one sensing circuit 12 can be coupled to the signal line 26e of pixel circuit 263, while the transistor 124 of the other sensing circuit 12 can be coupled to the signal line 26e of pixel circuit 262, but is not limited thereto. Figure 1 In some embodiments, signal line 26e may be, for example, a data line, and pixel circuits 26 located in the same column may share the same signal line 26e, but are not limited thereto.

[0039] In addition, such as Figure 1 As shown, the pixel circuit 26 may further include capacitors 26a and 26b, and signal line 26d. The control terminal and the first terminal of transistor 26c can be coupled to signal line 26d and signal line 26e, respectively, so the voltage of the pixel electrode can be controlled by switching transistor 26c. The first terminal, second terminal, and control terminal of transistor 26c can be, for example, a source (or drain), a drain (or source), and a gate, but are not limited thereto. Figure 1 In some embodiments, signal line 26d may be, for example, a scan line, and pixel circuits 26 located in the same row may share the same signal line 26d, but are not limited thereto. Capacitors 26a and 26b may be coupled in parallel, and the first terminals of capacitors 26a and 26b may be coupled to the second terminal of transistor 26c, while the second terminals of both may be coupled to a common voltage or a common electrode (e.g., Figure 4 The common electrode 58b shown. For example, capacitor 26a may be a pixel electrode (e.g., Figure 4 The pixel electrode 62a, common electrode, and liquid crystal layer (not shown) form a liquid crystal capacitor, and capacitor 26b can be a storage capacitor, but is not limited thereto. Electronic device 1 may have an opening region R1 located in the sensing region SR, and the opening region R1 is an area that allows light to pass through. Figure 1 In some embodiments, capacitors 26a and 26b of the pixel circuit 26 may be disposed in the opening region R1, but are not limited thereto. In some embodiments, the electronic device 1 may be, for example, other types of non-emissive display devices or self-emissive display devices. The pixel circuit 26 may not be limited to, for example, Figure 1 The circuit shown, for example when electronic device 1 is a self-emissive display device, may include, for example, at least signal line 26d, signal line 26e, two transistors, a capacitor, and a light-emitting unit, but is not limited thereto. The light-emitting unit may include, for example, an organic light-emitting diode (OLED), a quantum dot diode (QLED or QDLED), an inorganic light-emitting diode (LED), any other suitable light-emitting element, or a combination thereof. Inorganic light-emitting diodes may include, for example, mini LEDs or micro LEDs, but are not limited thereto.

[0040] like Figure 1As shown, the electronic device 1 may further include a touch circuit 28 for transmitting signals to control the touch element, thereby detecting the position of the touch electronic device 1. The touch circuit 28 may include a touch signal line 281 for transmitting drive signals or sensing signals, and the touch signal line 281 may be disposed on one side of the corresponding signal line 26e and extend along the second direction D2. Figure 1 In some embodiments, the touch signal line 281 may be disposed between the signal line 22 and the power line 14, but is not limited thereto. In some embodiments, the touch signal line 281 and the signal line 22 may transmit the same signal, for example, respectively as shown in the figure. Figure 9 The signal Stb shown is an example, but not limited to it.

[0041] The following will further explain how signals are transmitted to transistor 124 of sensing circuit 12 and transistor 26c of pixel circuit 26. Figure 2 The diagram shown is a schematic of a demultiplexer (DeMUX) according to some embodiments of the present invention. Figure 3 The diagram shown is a signal timing sequence diagram of a demultiplexing circuit. For example... Figure 2 As shown, the demultiplexing circuit 30 can be disposed, for example, in the peripheral region PR located on one side of the sensing region SR, to allow transistor 124 and its corresponding transistor 26c to share the same signal line 26e. The demultiplexing circuit 30 may include multiple transistor groups 32, and each transistor group 32 may include an n-type transistor 32a and a p-type transistor 32b, wherein the first terminal of the n-type transistor 32a is coupled to the first terminal of the p-type transistor 32b, and the second terminal of the n-type transistor 32a is coupled to the second terminal of the p-type transistor 32b. Furthermore, each signal line 26e may be coupled to the first terminal of the n-type transistor 32a of one transistor group 32, and the second terminal of the n-type transistor 32a in the transistor group 32 may be coupled to at least one signal terminal.

[0042] Specifically, in Figure 2In the embodiments, transistor group 32 may include transistor group 321, transistor group 322, transistor group 323, and transistor group 324. In each transistor group 321, the control terminal of n-type transistor 32a can receive a forward switching signal H1, the control terminal of p-type transistor 32b can receive a reverse switching signal XH1, and the first terminal of n-type transistor 32a is coupled to the signal line 26e of pixel circuit 261. In each transistor group 322, the control terminal of n-type transistor 32a can receive a forward switching signal H2, the control terminal of p-type transistor 32b can receive a reverse switching signal XH2, and the first terminal of n-type transistor 32a is coupled to the signal line 26e of pixel circuit 262. In each transistor group 323, the control terminal of n-type transistor 32a can receive a forward switching signal H3, the control terminal of p-type transistor 32b can receive a reverse switching signal XH3, and the first terminal of n-type transistor 32a is coupled to the signal line 26e of pixel circuit 263. Figure 2 In some embodiments, transistor groups 321, 322, and 323 may be arranged alternately along the first direction D1, for example, but are not limited thereto. In this case, starting from one side (e.g., the left side) of the demultiplexing circuit 30, excluding transistor group 324 from the calculation, the second terminal of the n-type transistors 32a of the odd-numbered transistor groups 32 may be coupled to the signal terminal S1, while the second terminal of the n-type transistors 32a of the even-numbered transistor groups 32 may be coupled to the signal terminal S2. For example, in Figure 2 In the demultiplexing circuit 30, starting from the left side, the first transistor group 321, the first transistor group 323, and the second transistor group 322 can be coupled to signal terminal S1, while the first transistor group 322, the second transistor group 321, and the second transistor group 323 can be coupled to signal terminal S2. Through this connection method, different voltage levels can be transmitted at signal terminals S1 and S2 respectively (e.g., high voltage level and low voltage level, or low voltage level and high voltage level, respectively, in the same frame), so that the sub-pixels of the electronic device 1 are displayed in a dot inversion or column inversion manner. In adjacent frames, the voltage levels of signal terminals S1 and S2 can be interchanged, but are not limited thereto. The connection method between the transistor group 32 and the pixel circuit 26 of the present invention is not limited thereto. In some embodiments, the connection method between the transistor group 32 and the pixel circuit 26 can be adjusted according to the arrangement of the pixel circuit 26. In some embodiments, the second terminals of transistor groups 321, 322 and 323 of the demultiplexing circuit 30 may also be coupled to the same signal terminal (e.g., signal terminal S1 or signal terminal S2), but are not limited thereto.

[0043] exist Figure 2In the transistor group 324 shown, the control terminal of the n-type transistor 32a can receive a forward switching signal H4, and the control terminal of the p-type transistor 32b can receive a reverse switching signal XH4. The first terminal of the n-type transistor 32a is coupled to the signal line 26e coupled to the sensing circuit 12. For example, when two adjacent sensing circuits 12 are symmetrical about the power line 14 disposed between them, starting from one side (e.g., the left side) of the demultiplexing circuit 30, the first transistor group 324 can be coupled to the signal line 26e coupled to the corresponding pixel circuit 263, and the second transistor group 324 can be coupled to the signal line 26e coupled to the corresponding pixel circuit 262, but this is not limited to this. The signal line 26e coupled to the transistor group 324 of the present invention can be adjusted according to the arrangement of the pixel circuits 26 and the signal line 26e shared by the sensing circuit 12 and the pixel circuit 26. Furthermore, starting from one side (e.g., the left side) of the demultiplexing circuit 30, the second terminal of the n-type transistor 32a of the odd-numbered transistor groups 324 can be coupled to the signal terminal S1, while the second terminal of the n-type transistor 32a of the even-numbered transistor groups 324 can be coupled to the signal terminal S2, so that the signal terminals S1 and S2 can be used to receive sensing signals from the sensing circuit 12, but this is not a limitation. In some embodiments, starting from the left side of the demultiplexing circuit 30, the odd-numbered transistor groups 324 can also be coupled to the signal terminal S2, while the even-numbered transistor groups 324 can be coupled to the signal terminal S1, but this is not a limitation. In some embodiments, the second terminal of the transistor groups 324 of the demultiplexing circuit 30 can also be coupled to the same signal terminal (e.g., signal terminal S1 or signal terminal S2), but this is not a limitation.

[0044] The following will illustrate the operation of the multiplexing circuit 30, but the invention is not limited thereto. Figures 1 to 3As shown, the demultiplexing circuit 30 can transmit display signals to the pixel circuit 26 during the display driving period DT for image display, and receive sensing signals during the sensing period ST for sensing (e.g., light sensing). Since the display driving period DT and the sensing period ST do not overlap, the electronic device 1 can achieve the effects of displaying images and image sensing. Specifically, the display driving period DT may include a first period T1, a second period T2, and a third period T3. The forward switching signal H1 can be at a high voltage level HV during the first period T1, causing the n-type transistor 32a of the transistor group 321 to be turned on, so that the data signals of signal terminals S1 and S2 can be transmitted to the corresponding pixel circuit 261 through different transistor groups 321 respectively. The forward switching signal H2 can be at a high voltage level HV during the second period T2, causing the n-type transistor 32a of the transistor group 322 to be turned on, so that the data signals of signal terminals S1 and S2 can be transmitted to the corresponding pixel circuit 262 through different transistor groups 322 respectively. The forward switching signal H3 can be at a high voltage level HV during the third time period T3, causing the n-type transistor 32a of the transistor group 323 to be turned on. Therefore, the data signals at signal terminals S1 and S2 can be transmitted to the corresponding pixel circuits 263 through different transistor groups 323. Through the above operation, the signal line 26e coupled to the first transistor group 321, the second transistor group 322, and the third transistor group 322 can receive data signals from one of the corresponding signal terminals S1 and S2, respectively. Figure 1 The pixel circuit 26 shown can display images.

[0045] Similarly, the reverse switching signal XH1 can be at a low voltage level LV during the first time period T1, causing the p-type transistor 32b of transistor group 321 to be turned on. The reverse switching signal XH2 can be at a low voltage level LV during the second time period T2, causing the p-type transistor 32b of transistor group 322 to be turned on. The reverse switching signal XH3 can be at a low voltage level LV during the third time period T3, causing the p-type transistor 32b of transistor group 323 to be turned on. Therefore, the data signals from signal terminals S1 and S2 can be transmitted to the corresponding pixel circuits 26 through different transistor groups 32 at different time periods.

[0046] exist Figure 3 In some embodiments, the first time period T1, the second time period T2, and the third time period T3 may, for example, not overlap with each other and may be performed sequentially, but are not limited thereto. In some embodiments, the order of the first time period T1, the second time period T2, and the third time period T3 may also be other permutations and combinations of the first time period T1, the second time period T2, and the third time period T3.

[0047] In addition, during the display driving period DT, the forward switching signal H4 can be at the low voltage level LV, and the reverse switching signal XH4 can be at the high voltage level HV. Therefore, the n-type transistor 32a and the p-type transistor 32b of the transistor group 324 can be in the off state.

[0048] exist Figure 3 During the sensing period ST, forward switching signals H1, H2, and H3 are all at a low voltage level LV, while reverse switching signals XH1, XH2, and XH3 are all at a high voltage level HV. Therefore, the n-type transistors 32a and p-type transistors 32b of transistor groups 321, 322, and 323 are all in the off state. Forward switching signal H4 is at a high voltage level HV, and reverse switching signal XH4 is at a low voltage level LV. Therefore, the n-type transistors 32a and p-type transistors 32b of transistor group 324 can be turned on, and sensing signals can be received from the corresponding sensing circuit 12 through signal terminals S1 and S2.

[0049] Figure 4 The diagram shown is a top view of the sensing area of ​​the electronic device according to a first embodiment of the present invention. Figure 5 The electronic device shown is an example of the first embodiment of the present invention. Figure 4 Schematic diagrams of the cross-sectional structures along sections A-A', B-B', C-C', D-D', and E-E'. Figure 4 The structure of electronic device 1 in the corresponding Figure 1 The two sensing circuits 12 and six pixel circuits 26 shown are examples, but the examples are not limited to these. Figure 4 In this text, since the positions of the components of different sensing circuits can be approximately symmetrical about the power supply line 14, the following description uses the components of the sensing circuit located to the left of the power supply line 14 as an example, but is not limited to this. Figure 4 and Figure 5 As shown, the electronic device 1 of this embodiment may include a substrate 34, a semiconductor layer 36, an insulating layer 38, a metal layer 40, an insulating layer 42, a metal layer 44, an insulating layer 46, a metal layer 48, an insulating layer 50, a sensing unit 121, an insulating layer 52, a metal layer 54, an insulating layer 56, a transparent conductive layer 58, an insulating layer 60, and a transparent conductive layer 62. The semiconductor layer 36 may be disposed on the substrate 34 and may include semiconductor blocks 36a, 36b, and 36c. The insulating layer 38 may be disposed on the semiconductor layer 36 and serves as... Figure 1The gate insulating layers of transistors 122, 123, and 124 in the sensing circuit 12 and the gate insulating layer of transistor 26c in the pixel circuit 26 are shown. A metal layer 40 may be disposed on the insulating layer 38 and may include, for example, signal lines 26d, 16, 18, and multiple electrodes 40a. Signal lines 26d, 16, and 18 may extend along a first direction D1 and be arranged sequentially along a second direction D2. Sensing circuits arranged in the first direction D1 may share the same signal lines 16 and 18. In the top view VD of the electronic device 1, the semiconductor block 36a may overlap with the signal line 16; therefore, a portion of the signal line 16 may serve as the gate (control terminal) of transistor 123, and the overlapping portion of the semiconductor block 36a and the signal line 16 may serve as the channel of transistor 123. The portion of semiconductor block 36a that does not overlap with metal layer 40 (or signal line 16) may include doped semiconductor, and the portions of semiconductor block 36a adjacent to its two ends may serve as the first terminal (source or drain) and the second terminal (drain or source) of transistor 123, respectively. Semiconductor block 36b may overlap with electrode 40a and signal line 18 in the top view VD. Therefore, electrode 40a and signal line 18 may serve as the gate (control terminal) of transistor 122 and the gate (control terminal) of transistor 124, respectively. The portion of semiconductor block 36b that overlaps with electrode 40a may serve as the channel of transistor 122, and the portion of semiconductor block 36b that overlaps with signal line 18 may serve as the channel of transistor 124. The portion of semiconductor block 36b that does not overlap with metal layer 40 may include doped semiconductor. The portions of semiconductor block 36b located on either side of electrode 40a in the top view VD can respectively serve as the first terminal (drain or source) and second terminal (source or drain) of transistor 122. Furthermore, the portion of semiconductor block 36b located between electrode 40a and signal line 18 in the top view VD, as well as the portion adjacent to the endpoint of signal line 18, can respectively serve as the first terminal (source or drain) and second terminal (drain or source) of transistor 124. Semiconductor block 36c may overlap with signal line 26d; therefore, a portion of signal line 26d can serve as the gate (control terminal) of transistor 26c, and the portion of semiconductor block 36c overlapping with signal line 26d can serve as the channel of transistor 26c. The portion of semiconductor block 36c that does not overlap with metal layer 40 may include doped semiconductor, and the portions of semiconductor block 36c adjacent to both ends can respectively serve as the first terminal (source or drain) and second terminal (drain or source) of transistor 26c. Figure 4 In some embodiments, electrode 40a may be disposed between signal line 16 and signal line 18, but is not limited thereto. The top view direction VD may be, for example, the normal direction perpendicular to the upper surface of substrate 34, but is not limited thereto.

[0050] like Figure 4 and Figure 5As shown, insulating layer 42 may be disposed on metal layer 40, and metal layer 44 may be disposed on insulating layer 42. Metal layer 44 may include multiple signal lines 26e, multiple electrodes 44a, multiple electrodes 44b, multiple electrodes 44c, and multiple electrodes 44d. Figure 5 Along Figure 4 As shown in section C-C', insulating layer 42 may have a through-hole 42a, and electrode 44c may extend into through-hole 42a and be coupled to electrode 40a. Insulating layer 38 and insulating layer 42 may also have through-holes 42b, 42c, 42d, 42e, 42f, and 42g. Electrode 44a may extend into the corresponding through-hole 42b and be coupled to one end of semiconductor block 36c (the second end of transistor 26c) (e.g., ...). Figure 5 Along Figure 4 As shown in the cross-section E-E', a portion of the signal line 26e extends into the via 42g and is coupled to the other end of the semiconductor block 36c (the first end of the transistor 26c). Electrode 44b extends into the corresponding via 42c and is coupled to one end of the semiconductor block 36a (the second end of the transistor 123) (as shown in the cross-section E-E'). Figure 5 Along Figure 4 As shown in the section D-D'), electrode 44c can extend into the corresponding through-hole 42d and be coupled to the other end of semiconductor block 36a (the first end of transistor 123) (as shown in the section D-D'). Figure 5 Along Figure 4 As shown in the section C-C'), electrode 44d can extend into the corresponding via 42e and be coupled to one end of semiconductor block 36b (the first end of transistor 122). A portion of the signal line 26e coupled to the sensing circuit can extend into the corresponding via 42f and be coupled to the other end of semiconductor block 36b (the second end of transistor 124) (as shown in the section C-C'). Figure 5 Along the middle Figure 4 As shown in the section line A-A'), so that the corresponding sensing circuit (such as...) Figure 1 One of the signal lines 26e of the sensing circuit 12 shown can be coupled to the sensing circuit and the pixel circuit (e.g., through the aperture 42f and aperture 42g respectively) via the aperture 42f and aperture 42g respectively. Figure 1 The transistor 26c of the pixel circuit 26 shown can reduce the number of signal lines in the electronic device 1.

[0051] exist Figure 5 In some embodiments, the transistor may be, for example, a top-gate thin-film transistor, but the structure of the electronic device 1 of the present invention is not limited thereto and may be adjusted according to the type of transistor. In some embodiments, the transistor may also be, for example, a bottom-gate thin-film transistor, or may be changed to a dual-gate transistor, other suitable transistors, or combinations thereof as required.

[0052] like Figure 4and Figure 5 As shown, an insulating layer 46 may be disposed on a metal layer 44, and has through holes 46a, 46b, 46c, and 46d. A metal layer 48 may be disposed on an insulating layer 46, and includes a power line 20, electrodes 48a and 48b, and a power line 14. The power line 20 may extend into the through hole 46a and be coupled to the electrode 44b, thereby being coupled to the second terminal of the transistor 123. Figure 4 In this embodiment, power line 20 may overlap with the corresponding signal line 26e and electrode 44b in the top view direction VD, and power line 20 may be electrically insulated from the overlapping signal line 26e through insulating layer 46. Electrode 48a may extend into and be coupled to through hole 46b. Electrode 48b may extend into and be coupled to through hole 46c, and thus be coupled to the first terminal of transistor 123. Power line 14 may extend into through hole 46d and be coupled to electrode 44d, and thus be coupled to the first terminal of transistor 122. Figure 4 In one embodiment, the power line 14 may overlap with the corresponding signal line 26e and electrode 44d in the top view direction VD, and the power line 14 may be electrically insulated from the overlapping signal line 26e by the insulating layer 46.

[0053] exist Figure 5 In some embodiments, the insulating layer 46 may include, for example, a planarization layer and a protective layer, sequentially disposed on the metal layer 44 and the insulating layer 42, but is not limited thereto. In some embodiments, the insulating layer 46 may be adjusted to a single-layer structure or a multi-layer structure as needed.

[0054] like Figure 4 and Figure 5 As shown, the insulating layer 50 can be disposed on the metal layer 48 and has a through-hole 50a. The sensing unit 121 can be disposed on the insulating layer 50 and coupled to the electrode 48b through the through-hole 50a. When the sensing unit 121 includes a photodiode, the sensing unit 121 may include, for example, an electrode, a photoconversion layer, and an electrode (not shown), sequentially disposed on the insulating layer 50, but is not limited thereto. The insulating layer 52 can be disposed on the sensing unit 121 and the insulating layer 50. Figure 5 In some embodiments, the insulating layer 52 may include, for example, a planarization layer and a protective layer, sequentially disposed on the sensing unit 121 and the insulating layer 50, but is not limited thereto. In some embodiments, the insulating layer 52 may be adjusted to a single-layer structure or a multi-layer structure as needed. A metal layer 54 may be disposed on the insulating layer 52 and includes signal lines 22 and touch signal lines 281. Figure 4In some embodiments, signal line 22 may overlap with the corresponding signal line 26e in the top-view direction VD, but is not limited thereto. Touch signal line 281 may overlap with the corresponding signal line 26e in the top-view direction VD, but is not limited thereto. In some embodiments, signal line 22 may overlap with electrode 48b in the top-view direction VD to reduce the opaque area in the sensing area SR, but is not limited thereto.

[0055] like Figure 4 and Figure 5 As shown, insulating layer 56 may be disposed on metal layer 54 and has a through hole 56a, and insulating layers 56 and 52 may have through holes 56b, exposing sensing unit 121. Transparent conductive layer 58 may be disposed on insulating layer 56 and includes connection electrode 58a. Connection electrode 58a may extend into through hole 56a to couple with signal line 22, and extend into through hole 56b to couple with exposed sensing unit 121, thus sensing unit 121 can be coupled to signal line 22 through connection electrode 58a. Figure 5 In this embodiment, the transparent conductive layer 58 may further include a common electrode 58b disposed on the insulating layer 56. An insulating layer 60 may be disposed on the transparent conductive layer 58, and insulating layers 60, 56, 52, and 50 may have a through-hole 60a to expose an electrode 48a coupled to the transistor 26c. A transparent conductive layer 62 may be disposed on the insulating layer 60 and may include a pixel electrode 62a. The pixel electrode 62a may extend into the through-hole 60a and be coupled to the electrode 48a, thereby being coupled to the second end of the transistor 26c. With the above configuration, the sensing circuit and the pixel circuit can be integrated into the sensing area SR, enabling the electronic device 1 to simultaneously possess sensing and display functions.

[0056] like Figure 4 As shown, two adjacent signal lines 26e, one signal line 26d, and one signal line 18 can surround an opening OP to allow light to pass through, and the opening OP can constitute Figure 1 The shown aperture region R1. In the top-view direction VD, the pixel electrode 62a and the common electrode 58b can be disposed in the corresponding aperture OP to control the transmittance of the liquid crystal layer of the corresponding aperture OP, but are not limited thereto. The pixel aperture ratio of the electronic device 1 can be, for example, the sum of the areas of all apertures OP in the top-view direction VD and the pixel aperture ratio. Figure 1 The proportion of the area of ​​the sensing area SR, but not limited to this.

[0057] In some embodiments, semiconductor layer 36 may include, for example, amorphous silicon, polycrystalline silicon, monocrystalline silicon, oxide semiconductor, other suitable semiconductors, or combinations thereof, but is not limited thereto. Insulating layers 38, 42, 46, 50, 52, 56, and 60 may include, for example, silicon oxide, silicon nitride, organic materials, other suitable materials, or combinations thereof, but are not limited thereto. Metal layers 40, 44, 48, and 58 may include, for example, aluminum, molybdenum nitride, copper, titanium, other suitable materials, or combinations thereof, but are not limited thereto. Transparent conductive layers 58 and 62 may include, for example, indium tin oxide, indium zinc oxide, other suitable transparent conductive materials, or combinations thereof, but are not limited thereto.

[0058] In some embodiments, when the electronic device 1 is a self-emissive display device and includes a light-emitting unit coupled to transistor 26c, Figure 5 The portion of the electronic device 1 along the section E-E' can be adjusted as needed. In this case, the pixel aperture ratio can be, for example, the area of ​​all light-emitting units in the top-view direction VD and... Figure 1 The proportion of the area of ​​the sensing area SR, but not limited to this.

[0059] like Figure 5 As shown, in some embodiments, the electronic device 1 may optionally include a buffer layer 64 disposed between the semiconductor layer 36 and the substrate 14. The buffer layer 64 may, for example, be used to block moisture, oxygen, or ions from entering the semiconductor layer 36. The buffer layer 64 may be a single layer or multiple layers, and the material of the buffer layer 64 may include, for example, silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, resin, other suitable materials, or combinations thereof, but is not limited thereto. In some embodiments, the electronic device 1 may optionally include a light-shielding layer 66 for shielding the channel region of the transistor. The light-shielding layer 66 may, for example, be disposed between the buffer layer 64 and the substrate 14, but is not limited thereto. The light-shielding layer 66 may include a plurality of light-shielding patterns 66a, and the light-shielding patterns 66a at least partially overlap with the semiconductor layer 36 and the metal layer 40 in the top view direction VD. Specifically, as Figure 4 and Figure 5 As shown, at least one light-shielding pattern 66a may at least partially overlap with semiconductor block 36a and signal line 16, at least another light-shielding pattern 66a may at least partially overlap with semiconductor block 36b, electrode 40a and signal line 18, and at least another light-shielding pattern 66a may at least partially overlap with semiconductor block 36c and signal line 26d, but is not limited thereto.

[0060] It is worth noting that by coupling the transistors 122 of two adjacent sensing circuits 12 to the same power line 14, the number of power lines 14 arranged along the second direction D2 in the electronic device 1 can be reduced, thereby increasing the accommodating space of the electronic device 1 in the first direction D1 and increasing the pixel aperture ratio of the electronic device 1. In some embodiments, coupling the transistors 124 of the sensing circuit 12 to the signal lines 26e of the corresponding pixel circuit 26 can significantly reduce the number of signal lines along the second direction D2 in the electronic device 1, which can also increase the pixel aperture ratio of the electronic device 1. In some embodiments, by overlapping the power line 20, signal line 22, touch signal line 281 and / or power line 14 with the corresponding signal line 26e in the top view direction VD, the pixel aperture ratio of the electronic device 1 can also be increased.

[0061] Figure 6 The diagram shown is a top view of an electronic device according to a variation of the first embodiment of the present invention. Figure 7 The electronic device shown is a variation of the first embodiment of the present invention. Figure 6 Schematic diagrams of the cross-sectional structures along sections F-F', G-G', H-H', I-I', and J-J'. (See attached diagram.) Figure 6 and Figure 7 As shown, the electronic device 1a in this variant embodiment differs from... Figure 4 and Figure 5 The electronic device 1 is characterized in that the structure of the electronic device 1a may not include the metal layer 54. In this case, such as Figure 7 Along Figure 6 As shown in the sections F-F' and G-G', the metal layer 48 may also include signal lines 22 and touch signal lines 281. Figure 7 In this embodiment, since the signal line 22 is located in the metal layer 48, the through hole 56a can penetrate the insulating layers 56, 52, and 50 to expose the signal line 22, and the connecting electrode 58a can extend to the through hole 56a to couple with the signal line 22. Therefore, the sensing unit 121 can be coupled to the signal line 22 through the connecting electrode 58a. Figure 6 In this embodiment, signal line 22 and electrode 48b may be separated from each other in the top view direction VD. The structure and circuitry of other parts of the electronic device 1a in this variation embodiment may be similar to or the same as, for example, [the original text is incomplete]. Figure 1 , Figure 4 and Figure 5 The electronic device 1 shown will not be described in detail.

[0062] The electronic device of the present invention is not limited to the above embodiments and may have different embodiments. For the sake of simplicity, the same reference numerals will be used to refer to the same elements in the different embodiments below as in the above embodiments. To clearly illustrate the different embodiments, the differences between the different embodiments will be described below, and repeated parts will not be repeated.

[0063] Figure 8 The diagram shown is a circuit schematic of an electronic device according to a second embodiment of the present invention. Figure 8 As shown, the electronic device 2 in this embodiment is different from... Figure 1 The electronic device shown is characterized in that the touch signal line 281 of this embodiment can be used to transmit... Figure 1 The bias signal of signal line 22 and Figure 1 The touch signal is a touch signal line. Since the bias signal and the touch signal can be, for example, the same, the bias line and the touch signal line in this embodiment can be integrated into a single touch signal line 281. This reduces the space required for the signal line arranged along the second direction D2, thereby improving the pixel aperture ratio of the electronic device 2. The touch signal line 281 can be coupled to the second end of the sensing unit 121 and is included in the touch circuit 28. Figure 8 In this embodiment, the electronic device 2 may further include a readout line 70, for example, extending along the first direction D1, and the second end of the transistor 124 is not coupled to the signal line 26e, but is coupled to the readout line 70. The readout line 70 may, for example, be disposed between the touch signal line 281 and the power line 14, but is not limited thereto. Other parts of the circuitry of the electronic device 2 in this embodiment may, for example, be similar to or the same as... Figure 1 The electronic device 1 shown will not be described in detail.

[0064] Figure 9 The diagram shows the timing sequence of the signals supplied to the touch signal line. Figure 9 As shown, electronic device 2 can provide a signal Stb to touch signal line 281. Signal Stb can be maintained at a fixed voltage V, such as a common voltage, during the display driving period DT and the sensing period ST, while during the touch period TT, it can have a touch signal TS, wherein the touch signal TS can, for example, include multiple pulses. Figure 9 In this embodiment, the display driving period DT, the touch period TT, and the sensing period TS can be performed alternately in sequence, but are not limited to this. It should be noted that by integrating the bias signal and the touch signal into a single signal Stb, the... Figure 1 The signal line 22 is integrated into the touch signal line 281, thereby improving the pixel aperture ratio of the electronic device 2.

[0065] Figure 10 The diagram shown is a top view of the sensing area of ​​the electronic device according to a second embodiment of the present invention. Figure 11 The electronic device shown is a second embodiment of the present invention. Figure 10 Schematic diagrams of the cross-sectional structures along sections K-K', L-L', M-M', N-N', and P-P'. (See attached diagram.) Figure 10 and Figure 11 As shown, the structure of the electronic device 2 in this embodiment differs from that of the electronic device 2 in this embodiment. Figure 4 and Figure 5 The electronic device 1 is structured such that metal layer 44 further includes an electrode 44e, and metal layer 48 further includes an electrode 48c, such that one end of semiconductor block 36b (i.e., the second end of transistor 124) can be coupled to read line 70 via electrodes 44e and 48c. Specifically, electrode 44e can be separated from signal line 26e. Insulating layer 42 and insulating layer 38 may have a via 42h, exposing one end of semiconductor block 36b, and electrode 44e extends into via 42h to be coupled to semiconductor block 36b. Insulating layer 46 may have a via 46e, exposing electrode 44e, and electrode 48c can extend into via 46e to be coupled to electrode 44e. Insulating layer 52 may have a via 52a, exposing electrode 48c, and a portion of read line 70 can extend into via 52a to be coupled to electrode 48c, such that the second end of transistor 124 can be coupled to read line 70. Figure 10 and Figure 11 In some embodiments, the readout line 70 may, for example, replace Figure 4 The touch signal line 281 is contained within the metal layer 54. Furthermore, the readout line 70 may overlap with the corresponding signal line 26e in the top-view direction VD, but is not limited thereto. Figure 11 Along Figure 10 The sections K-K', L-L', M-M', and P-P' can be, for example, with Figure 5 Along Figure 4 The sections B-B', C-C', D-D', and E-E' are the same, and the structures of other parts of the electronic device 2 in this embodiment may be similar to or the same as those in the embodiment. Figure 4 and Figure 5 The electronic device 1 shown will not be described in detail.

[0066] Figure 12 The diagram shown is a top view of the sensing area of ​​an electronic device according to a variation of the second embodiment of the present invention. Figure 13 The electronic device shown is a variation of the second embodiment of the present invention. Figure 12 Schematic diagrams of the sectional structures along sections Q-Q', R-R', S-S', and T-T'. (See attached diagram.) Figure 12 and Figure 13 As shown, the electronic device 2a in this variant embodiment differs from... Figure 10 and Figure 11The electronic device 2 is characterized in that the structure of the electronic device 2a may not include the metal layer 54. In this case, such as Figure 13 Along Figure 12 As shown in the sections Q-Q' and T-T', the metal layer 48 may also include touch signal lines 281 and readout lines 70. Figure 13 In one embodiment, the perforation 56a can penetrate the insulating layers 56, 52, and 50 to expose the touch signal line 281, and the connecting electrode 58a can extend to the perforation 56a to couple with the touch signal line 281. Therefore, the sensing unit 121 can be coupled to the touch signal line 281 through the connecting electrode 58a. Figure 12 In this embodiment, the touch signal line 281 and the electrode 48b may be separated from each other in the top view direction VD. The structure and circuitry of other parts of the electronic device 2a in this variation embodiment may be similar to or the same as, for example, [the original text is incomplete]. Figure 8 , Figure 10 and Figure 11 The electronic device 2 shown will not be described in detail.

[0067] Figure 14 The diagram shown is a circuit schematic of an electronic device according to a third embodiment of the present invention. Figure 14 As shown, the electronic device 3 in this embodiment is different from... Figure 1 The electronic device 1 shown is characterized in that the touch signal line 281 of the electronic device 3 can be replaced Figure 1 Signal line 22. Figure 14 The touch signal line 281 may be similar to or the same as Figure 8 The touch signal line 281 is used, so I won't go into details. Figure 14 In some embodiments, electronic device 3 may not include Figure 8 The readout line 70, and the second terminal of the transistor 124 of the sensing circuit 12 can be coupled to the signal line 26e (e.g., data line) of a corresponding pixel circuit 26, such that the second terminal of the transistor 124 and the corresponding transistor 26c can be coupled to the same signal line 26e. It should be noted that other parts of the circuitry of the electronic device 3 in this embodiment may be similar to or the same as, for example, [the following text is incomplete and requires further context]. Figure 1 The electronic device 1 shown will not be described again. The structure of the electronic device 3 in this embodiment may be similar to or the same as that shown. Figures 4 to 5 The structure of the electronic device 1 shown is after the signal line 22 is replaced with the touch signal line 281, so it will not be described in detail.

[0068] In summary, in the electronic device of the present invention, by coupling two adjacent sensing circuits to the same power line, coupling the transistors of the sensing circuits to the signal lines of the corresponding pixel circuits, and / or integrating other signal lines into the touch signal lines, the number of signal lines or power lines arranged along the second direction in the electronic device can be reduced, thereby increasing the pixel aperture ratio of the electronic device. In some embodiments, by overlapping the power lines, signal lines, and / or touch signal lines with the signal lines of the corresponding pixel circuits in the top view direction, the pixel aperture ratio of the electronic device can also be improved.

[0069] The above description is merely an embodiment of the present invention and is not intended to limit the invention. For those skilled in the art, the present invention can have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An electronic device, characterized in that, include: A first sensing circuit, comprising: A first sensing unit; A first transistor, wherein a first terminal of the first sensing unit is coupled to a control terminal of the first transistor; and A second transistor, wherein a first terminal of the first transistor is coupled to a first terminal of the second transistor; A second sensing circuit, comprising: A second sensing unit; and A third transistor, wherein a first terminal of the second sensing unit is coupled to a control terminal of the third transistor; A power line, wherein the second terminal of the first transistor and the first terminal of the third transistor are coupled to the power line; and A pixel circuit includes a signal line; The signal line extends in a direction parallel to the power line, and the power line overlaps the signal line in a top view. The second terminal of the second transistor is coupled to the signal line.

2. The electronic device according to claim 1, characterized in that, The signal line is a data line.

3. The electronic device according to claim 1, characterized in that, It also includes a touch circuit, including a touch signal line coupled to the second end of the first sensing unit.

4. The electronic device according to claim 1, characterized in that, The power line is disposed between the first sensing circuit and the second sensing circuit.

5. An electronic device, characterized in that, include: A pixel circuit includes a first transistor and a signal line, wherein the signal line is coupled to a first terminal of the first transistor. A sensing circuit includes a sensing unit, a second transistor, and a third transistor, wherein a first terminal of the sensing unit is coupled to a control terminal of the second transistor, a first terminal of the second transistor is coupled to a first terminal of the third transistor, and a second terminal of the third transistor is coupled to a signal line. as well as A power line is coupled to the second terminal of the second transistor; The signal line extends in a direction parallel to the power line, and the power line overlaps the signal line in a top view.

6. The electronic device according to claim 5, characterized in that, The signal line is a data line.

7. An electronic device, characterized in that, include: A sensing circuit, comprising: One sensing unit; A first transistor, wherein a first terminal of the sensing unit is coupled to a control terminal of the first transistor; and A second transistor, wherein a first terminal of the first transistor is coupled to a first terminal of the second transistor; A touch circuit includes a touch signal line, wherein the touch signal line is coupled to a second terminal of the sensing unit; and A pixel circuit includes a signal line, wherein a second terminal of the second transistor is coupled to the signal line; The signal line extends in a direction parallel to the direction of the touch signal line, and the touch signal line overlaps the signal line in a top-view direction.

8. The electronic device according to claim 7, characterized in that, The signal line is a data line.

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