Substrate support and shutter apparatus

Abstract

A substrate support apparatus is provided. The apparatus includes a circular base plate and one or more spacers disposed about a circumference of the base plate. The spacers can extend from a top surface of the base plate, and an annular body can be coupled to the spacers. The annular body can be spaced apart from the base plate to define an aperture between the base plate and the annular body. One or more support columns can be coupled to and extend from the base plate. The support columns can be coupled to the base plate at a location radially inward from an inner surface of the annular body.

Description

[0001] This application is a divisional application of the invention patent application filed on September 14, 2016, with application number 201680058300.2 and entitled "Baseboard Support and Baffle Device". Technical Field

[0002] The embodiments of this disclosure generally relate to supercritical drying equipment. More specifically, the embodiments described herein relate to substrate supports and baffle devices. Background Technology

[0003] In cleaning semiconductor devices, it is typically necessary to remove liquid and solid contaminants from the surface of the substrate, leaving a clean surface. Wet cleaning processes generally involve the use of cleaning liquids, such as water-based cleaning solutions. After wet cleaning of the substrate, the cleaning liquid is usually removed from the substrate surface within a cleaning chamber.

[0004] Most current wet cleaning techniques use liquid spraying or immersion steps to clean substrates. Drying substrates with high aspect ratios or low-k materials with voids or holes after applying cleaning liquids is very challenging. The capillary force of the cleaning liquid often causes material deformation in these structures, generating undesirable static friction that can damage semiconductor substrates in addition to residues left by the cleaning solution. These drawbacks are particularly pronounced for semiconductor device structures with high aspect ratios during subsequent substrate drying. Linear static friction, or line breakage, is caused by the bending of sidewalls, forming high aspect ratio trenches or vias facing each other, due to capillary pressure across the liquid-air interface during the wet cleaning process. Features with narrow linewidths and high aspect ratios are particularly susceptible to differences in surface tension (due to capillary pressure, sometimes also called capillary force) between the liquid-air and liquid-wall interfaces. Due to rapid advancements in device size, current feasible drying practices face a dramatically increasing challenge in preventing linear static friction.

[0005] Furthermore, particle generation and deposition on the substrate are specific areas of concern during phase change processing. High pressure in the processing environment can cause particle generation, and various fluids introduced into the processing environment can also cause particle deposition on the substrate. As a result, device performance can be reduced due to the presence of undesirable particles on the substrate.

[0006] As a result, there is a need in the art for improved equipment to perform phase change and supercritical processing operations. Summary of the Invention

[0007] In one embodiment, a substrate support device is provided. The device includes a circular base plate and one or more spacers arranged around the circumference of the base plate. The spacers may extend from a top surface of the base plate, and an annular body may be coupled to the spacers. The annular body may be spaced apart from the base plate to define a gap between the base plate and the annular body. One or more support posts may be coupled to and extend from the base plate. The support posts may be coupled to the base plate at a location radially inward from the inner surface of the annular body.

[0008] In another embodiment, a substrate support device is provided. The device includes a circular base plate and one or more spacers arranged around the circumference of the base plate. The spacers may extend from a top surface of the base plate, and an annular body may be coupled to the spacers. The annular body may be spaced apart from the base plate to define a gap between the base plate and the annular body. One or more support posts may be coupled to and extend from the base plate. The support posts may be coupled to the base plate at a position radially inward from the inner surface of the annular body, and a circular baffle may be coupled to the top surface of the annular body. One or more positioning elements may extend from the bottom surface of the baffle and are arranged around the circumference of the baffle.

[0009] In another embodiment, a substrate support method is provided. The method includes the steps of: placing a substrate assembly sideways on one or more support pillars coupled to a base plate of a substrate support member; a ring-shaped body coupled to the base plate and positioned around the circumference of the substrate; and placing a baffle on the substrate, the baffle being coupled to the ring-shaped body. The substrate, the substrate support member, the ring-shaped body, and the baffle can be placed in a processing chamber, and the substrate can be exposed to supercritical CO2. Attached Figure Description

[0010] The manner in which the features of this disclosure are described above can thus be understood in detail, and a more specific description of this disclosure can be obtained by referring to embodiments (briefly summarized above), some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments and are therefore not intended to limit their scope, and other equivalent embodiments are permissible.

[0011] Figure 1 The illustration shows the effect of static friction between features formed on a semiconductor substrate according to the embodiments described herein.

[0012] Figure 2A The figure shows a plan view of a processing device according to one embodiment described herein.

[0013] Figure 2B The figure shows a plan view of a processing device according to one embodiment described herein.

[0014] Figure 3 The illustration schematically shows a cross-sectional view of a processing chamber according to one embodiment described herein.

[0015] Figure 4 The illustration shows a perspective view of a substrate support and baffle according to one embodiment described herein.

[0016] Figure 5 The figure shows a side view of a substrate support and baffle according to one embodiment described herein.

[0017] Figure 6 The figure shows an exploded planar perspective view of a substrate support and baffle according to one embodiment described herein.

[0018] Figure 7 The figure shows an exploded bottom perspective view of a substrate support and baffle according to one embodiment described herein.

[0019] Figure 8 The figure shows a partial perspective view of a substrate support and support column according to one embodiment described herein.

[0020] Figure 9 The figure shows a partial cross-sectional view of a substrate support, support column, and baffle according to one embodiment described herein.

[0021] Figure 10 The figure shows a cross-sectional view of a substrate support, spacer, and baffle positioning element according to one embodiment described herein.

[0022] Figure 11 The figure shows a plan view of a substrate support according to one embodiment described herein.

[0023] For ease of understanding, the same reference numerals are used as much as possible to indicate the same elements that are common in the figures. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0024] In the following description, numerous specific details are set forth for illustrative purposes in order to provide a general understanding of the embodiments provided herein. However, it will be apparent to those skilled in the art that the present disclosure can be implemented without these specific details. In other examples, specific device structures have not been described so as not to obscure the described embodiments. The following description and accompanying drawings are illustrative embodiments and should not be construed as limiting the disclosure.

[0025] Figure 1The diagram illustrates a portion of a semiconductor device 100, showing linear static friction occurring between two features within the device. As shown, a device structure with a high aspect ratio is formed on the surface of a substrate. During processing, the device structure 102 should remain vertically oriented, and walls 106 should not cross the opening 104 or contact adjacent walls 106 of the device structure 102. After cleaning with a wetting chemical, when the semiconductor device 100 is dried, the walls 106 of the device structure 102 are subjected to capillary forces (attributable to the air-liquid interface created by the cleaning liquid within the opening 104), causing adjacent walls 106 of the device structure 102 to bend toward each other and come into contact. Linear static friction, caused by the contact between the walls 106 of adjacent device structures 102, ultimately results in the closure of the opening 104. Linear static friction is generally undesirable because it prevents entry and exit from the opening 104 during subsequent substrate processing steps (e.g., further deposition steps).

[0026] To prevent static friction, the substrate can be exposed to an aqueous cleaning solution, such as deionized water or cleaning chemicals, in a wetting cleaning chamber. The substrate includes a semiconductor substrate with electronic devices disposed or formed thereon. After performing the wetting cleaning process, an aqueous cleaning solution is used on the substrate in the wetting cleaning chamber to remove residues remaining on the substrate. In some configurations, the wetting cleaning chamber can be a single-wafer cleaning chamber and / or a horizontal rotation chamber. Furthermore, the wetting cleaning chamber may have a mega-frequency ultrasonic plate adapted to generate acoustic energy directed to the non-device side of the substrate.

[0027] After wetting and cleaning the substrate, the substrate can be transferred to a solvent exchange chamber to displace any previously used water-based cleaning solution used in the wetting and cleaning chamber. The substrate can then be transferred to a supercritical fluid chamber for further cleaning and drying steps to be performed on the substrate. In one embodiment, drying the substrate may involve the delivery of supercritical fluid to the surface of the substrate. When subjected to certain pressure and temperature configurations reached or maintained in the supercritical processing chamber, a drying gas can be selected to transition into a supercritical state. An example of such a drying gas includes carbon dioxide (CO2). Because supercritical CO2 is a supercritical gas, it has no surface tension; its surface tension is similar to that of a gas, but it has a density similar to that of a liquid. Supercritical CO2 has a critical point at a pressure of approximately 73.0 atm and a temperature of approximately 31.1 degrees Celsius. A unique property of supercritical fluids (e.g., CO2) is that condensation does not occur at any pressure above the supercritical pressure and at any temperature above the critical point (e.g., 31.1 degrees Celsius and 73 atm for CO2). The critical temperature and critical pressure parameters of the processing environment (e.g., the processing chamber) affect the supercritical state of the CO2 drying gas.

[0028] Due to the unique properties of supercritical fluids, they can substantially penetrate all pores or voids in the substrate and remove any residual liquid or particles that may appear in opening 104. In one embodiment, after the supercritical treatment has been performed for the required cycle time to remove particles and residues, the pressure in the chamber decreases at a near-constant temperature, allowing the supercritical fluid to directly convert to the gas phase within opening 104. The liquid typically present in opening 104 prior to supercritical fluid treatment may be a displacement solvent from a solvent exchange chamber. The particles typically present in opening 104 may be any solid particulate matter, such as organic species (e.g., carbon), inorganic species (e.g., silicon), and / or metals. Examples of openings 104 that can be dried by supercritical fluid include voids or pores in dielectric layers, voids or pores in low-k dielectric materials, and other types of gaps in the substrate that can trap cleaning fluid and particles. In addition, supercritical drying can prevent linear static friction from bypassing the liquid state during phase transition and the capillary forces generated between the walls 106 of the elimination device structure 102 (attributed to the negligible surface tension of supercritical fluids (e.g., supercritical CO2)).

[0029] The substrate can then be transferred from the supercritical fluid chamber to a post-processing chamber. The post-processing chamber can be a plasma treatment chamber, in which contaminants that may appear on the substrate can be removed. The post-processed substrate can also further release any linear static friction present in the device structure. The process described herein is useful for cleaning device structures with high aspect ratios, such as about 10:1 or higher, 20:1 or higher, or 30:1 or higher. In some embodiments, the process described herein is useful for cleaning 3D / vertical NAND flash memory device structures.

[0030] Figure 2A The illustration shows a substrate processing apparatus according to one embodiment of the present disclosure, adapted to perform one or more of the operations described above. In one embodiment, the processing apparatus 200 includes a wetting and cleaning chamber 201, a solvent exchange chamber 202, a supercritical fluid chamber 203, a post-processing chamber 204, a transfer chamber 206, and a wetting robotic arm 208. The processed substrate may include (but is not limited to) electronic devices, such as transistors, capacitors, or resistors, formed internally connected by metal wires insulated by interlayer dielectrics on the substrate. These processes may include cleaning the substrate, cleaning a thin film formed on the substrate, drying the substrate, and drying the thin film formed on the substrate. In another embodiment, the processing apparatus 200 includes an inspection chamber 205, which may include tools (not shown) for inspecting the substrate processed in the processing apparatus 200.

[0031] In one embodiment, the substrate processing apparatus 200 is a cluster tool including several substrate processing chambers, such as a wetting and cleaning chamber 201, a solvent exchange chamber 202, a supercritical fluid chamber 203, a post-processing chamber 204, and a transfer chamber 206. The chambers 201, 202, 203, and 204 can be positioned around a wetting robotic arm 208, which can be disposed within the transfer chamber 206. The wetting robotic arm 208 includes a motor, a substrate, an arm, and an end effector 209, configured to transfer substrates between the chambers. Optionally, the wetting robotic arm 208 may have multiple arms and multiple end effectors to increase the throughput of the processing apparatus 200. In one embodiment, the wetting robotic arm 208 transfers substrates between the aforementioned chambers. In another embodiment, at least one of the terminal actuators of the wetting robot arm 208 is a dedicated dry terminal actuator (e.g., suitable for handling dry wafers), and at least one of the terminal actuators of the wetting robot arm 208 is a dedicated wet terminal actuator (e.g., suitable for handling wet wafers). The dedicated dry terminal actuator can be used to transfer substrates between the supercritical fluid chamber 203 and the post-processing chamber 204.

[0032] The processing apparatus 200 also includes a dry robotic arm 216 disposed in a factory interface 218, which is coupled to the processing apparatus 200 and a plurality of substrate cassettes 212 and 214, each of which holds a plurality of substrates to be cleaned or dried (or already cleaned or dried). The dry robotic arm 216 may be configured to transfer substrates between cassettes 212 and 214 and a wetting and cleaning chamber 201 and a post-processing chamber 204. In another embodiment, the dry robotic arm 216 may be configured to transfer substrates between a supercritical fluid chamber 203 and a post-processing chamber 204. A processing chamber within the processing apparatus 200 may be positioned on a horizontal platform that accommodates a substrate transfer chamber 206. In another embodiment, a portion of the platform may be oriented in a location other than a horizontal orientation (see [link to relevant documentation]). Figure 5 ).

[0033] In alternative implementations, such as Figure 2B As shown, the processing apparatus 200A can be a linear apparatus, including several substrate processing chambers, such as a wetting and cleaning chamber 201, a solvent exchange chamber 202, a supercritical fluid chamber 203, a post-processing chamber 204, and a transfer chamber 206. For example, the processing apparatus 200A could be supplied by Applied Materials, Inc., Santa Clara, California. However, it is worth considering that other processing devices from other manufacturers may be applicable to perform the implementation described herein.

[0034] Chambers 201, 202, 203, and 204 can be positioned around a robotic arm 208A, which can be located within a transfer chamber 206. The robotic arm 208A includes a motor, a base, arms, and end effectors 209A and 209B, configured to transfer substrates between chambers. The robotic arm 208A can have multiple arms and multiple end effectors to increase the throughput of the processing device 200A. In one embodiment, the robotic arm 208A (with a dedicated wet end effector 209A) transfers substrates between the aforementioned chambers. The processing device 200A may also include a factory interface 218, which can be coupled to the processing device 200A and multiple substrate cassettes 212 and 214, each of which holds multiple substrates to be cleaned or dried (or already cleaned or dried). The robotic arm 208A has a dedicated dry terminal actuator 209B for transferring substrates between cassettes 212 and 214 and the wetting and cleaning chamber 201 and the post-processing chamber 204. In one embodiment, the dedicated dry terminal actuator 209B can be configured to transfer substrates between the supercritical fluid chamber 203 and the post-processing chamber 204. Chambers within the processing apparatus 200A can be placed on a horizontal platform housing the substrate transfer chamber 206. In another embodiment, portions of the platform can be oriented in a location other than a horizontal orientation (see...). Figure 5 ).

[0035] In some configurations of the processing equipment 200A, a robotic arm 208A can advance along a linear track 220. Chambers can be sequentially positioned on one or both sides of the linear track 220. To perform wet substrate transfer, excess liquid can be removed from the substrate (e.g., by rotating the substrate) while still within the chamber, so that only a thin wetting layer remains on the substrate surface before the robotic arm 208A transfers the substrate. In embodiments where the robotic arm 208A provides two or more end actuators, at least one can be dedicated to wet substrate transfer and another to dry substrate transfer. More substrates can be mounted in scalable linear configurations for high-volume production.

[0036] The configuration proposed in the previous embodiment significantly reduces the design complexity of each chamber, enabling queuing time control between sensitive processing steps and optimizing throughput in continuous production using adjustable chamber module counts to balance the process duration of each processing operation.

[0037] Figure 3 The illustration schematically shows a cross-sectional view of a processing chamber 300 according to one embodiment described herein. In some embodiments, the chamber 300 may be implemented with respect to... Figure 2A and Figure 2BThe chamber 203 is described. Generally, the chamber 300 is configured to withstand pressurization suitable for generating and / or maintaining a supercritical fluid within the chamber 300. The chamber 300 can also be advantageously circulated within a temperature range suitable for performing a phase change.

[0038] Chamber 300 includes a body 302, a gasket 318, and an insulating element 316. The body 302 and gasket 318 generally define a processing space 312. The body 302 may be configured to withstand pressures suitable for generating supercritical fluid within the processing space 312. For example, the body may be adapted to withstand pressures of about 100 bar or more. Materials suitable for the body 302 include stainless steel, aluminum, or other high-strength metallic materials. The gasket 318 may also be formed from a material similar to that of the body 302. In one embodiment, the gasket 318 and the body 302 may be a single material. In another embodiment, the gasket 318 and the body 302 may be separate but coupled devices.

[0039] The liner 318 may have a thickness between approximately 2 mm and approximately 5 mm, for example, approximately 3 mm, in the region adjacent to the processing space 312. The relatively minimal amount of material comprising the liner 318 (relative to the body 302) results in the liner 318 having a small thermal mass relative to the body 302. Accordingly, because the temperature of the processing space 312 is primarily affected by the liner 318 rather than the body 302, temperature changes within the processing space 312 can be achieved more efficiently. In one embodiment, the processing environment within the processing space 312 may cycle between approximately 20 degrees Celsius and approximately 50 degrees Celsius for a time period of less than approximately 5 minutes (e.g., less than approximately 1 minute). In one embodiment, the processing space 312 may cycle between approximately 20 degrees Celsius and approximately 50 degrees Celsius for approximately 30 seconds.

[0040] An insulating element 316 is generally disposed within the body 302 adjacent to the gasket 318. The insulating element 316 may be formed of a material suitable for use in high-pressure environments and having a coefficient of thermal expansion similar to that of the materials used in the body 302 and the gasket 318. In one embodiment, the insulating element 316 may be a ceramic material. Various examples of ceramic materials include alumina, aluminum nitride, silicon carbide, and the like. The thickness of the insulating element 316 may be between about 0.1 inches and about 1.0 inches, for example, about 0.5 inches.

[0041] The processing space 312 has a volume of less than about 2 liters, for example, about 1 liter. In various embodiments, depending on the conditions within the processing space 312, the processing space 312 may be filled with a variety of liquids, gases, and / or supercritical fluids. In one embodiment, the processing space 312 may be coupled to one or more solvent sources 320, 332, 336. A first solvent source 320 may be coupled to the processing space 312 via a first conduit 322 through the top of the body 302. A second solvent source 332 may be coupled to the processing space 312 via a second conduit 334 through the sidewall of the body 302. A third solvent source 336 may be coupled to the processing space 312 via a third conduit 338 through the bottom of the body 312. Depending on the desired solvent introduction characteristics, the solvent sources 320, 332, 336 may be configured to supply solvent to the processing space from multiple inlet ends.

[0042] Suitable solvents that can be supplied from solvent sources 320, 332, and 336 to processing space 312 include: acetone, isopropanol, ethanol, methanol, N-methyl-2-pyrrolidone, N-methylformamide, 1,3-dimethyl-2-imidazolidinone, dimethylacetamide, and dimethyl sulfoxide, etc. Generally, solvents can be selected such that they are miscible with liquid CO2.

[0043] A first fluid source 324 may be coupled to a processing space 312 via a fourth conduit 326 through the top of the body 302. The first fluid source 324 is generally configured to provide a liquid or supercritical fluid to the processing space 312. In one embodiment, the first fluid source 324 may be configured to deliver supercritical CO2. In another embodiment, the fluid source 324 may be configured to deliver supercritical CO2 to the processing space 312. In this embodiment, heating and pressurizing devices may be coupled to the fourth conduit 326 to facilitate a phase change from liquid CO2 to supercritical CO2 before entering the processing space 312. In another embodiment, a third solvent source 336 is a second fluid source configured similarly to the first fluid source 324. Alternatively, a second fluid source may be used in addition to and / or in combination with the third solvent source 336. In this embodiment, the second fluid source may be coupled to the processing space via a fifth conduit 338 through the bottom of the body 302. Depending on the required processing characteristics, the delivery of liquid CO2 and / or supercritical CO2 can be selected from top to bottom (first fluid source 324) or bottom to top (second fluid source).

[0044] During operation, the temperature of the processing space 312 can be controlled at least in part by the temperature of the CO2 supplied to it. Additionally, a dose of liquid CO2 and / or supercritical CO2 can be supplied to the processing space 312, causing the entire processing space to be exchanged between approximately 1 and approximately 5 times, for example, approximately 3 times. It is believed that repeated processing space turnover facilitates the mixing of solvent and CO2 prior to the formation and / or delivery of supercritical CO2 to the processing space 312 during subsequent supercritical drying operations. To facilitate the turnover and removal of fluids and gases from the processing space 312, the processing space 312 can be coupled to the fluid outlet 340 via a sixth conduit 342.

[0045] The chamber 300 also includes a substrate support 306, which can be configured to intersect with a baffle 310. In one embodiment, the baffle 310 is movably disposed within the processing space 312. The substrate support 306 can be formed of a variety of materials, including stainless steel, aluminum, ceramic materials, polymeric materials, or combinations thereof. In operation, the substrate support 306 can enter the processing space 312 through an opening (not shown) formed in the body 302. Generally, a substrate (not shown) can be placed on the substrate support 306 before the substrate support 306 enters the processing space.

[0046] The baffle 310 can be formed of various materials, including stainless steel, aluminum, ceramic materials, quartz materials, silicon-containing materials, or other suitable materials. The baffle 310 can be coupled to an actuator 330, which is configured to move the baffle 310 toward and away from the substrate support 306. The actuator 330 can be coupled to a power source 328 (e.g., an electrical power source) to facilitate movement of the baffle 310 within the processing space 312. In another embodiment, the baffle 310 can be placed on or coupled to the substrate support 306 before entering the processing space 312. In this embodiment, the substrate is placed on the substrate support 306, and the baffle 310 can be placed on the substrate support 306 to close the substrate between the substrate support 306 and the baffle 310.

[0047] As described above, a substrate can be placed on the substrate support 306 during processing. In one embodiment, the device side on which the substrate can be placed is adjacent to the substrate support 306, such that the device side faces away from the baffle 310. In an embodiment where the baffle is placed in the processing space 312 and coupled to the actuator 330, the baffle 310 may be in a raised position when the substrate support 306 is placed within the processing space 312. The baffle 310 may be lowered to a processing position close to the substrate via the actuator 330 during processing. In some embodiments, the baffle 310 may contact the substrate support 306 during substrate processing. After processing, the baffle 310 may be raised and the substrate support 306 may be removed from the processing space 312 through an opening in the body 302. It is believed that by placing the baffle 310 close to the substrate and the substrate support 306, particle deposition on the device side of the substrate 308 may be reduced or eliminated during the introduction of solvent and / or liquid / supercritical CO2 into the processing space 312.

[0048] Figure 4 The illustration shows a perspective view of a substrate support 306 and a baffle 310 according to one embodiment described herein. The terms used herein (e.g., “top,” “bottom,” “inner,” “outer,” etc.) are intended to describe rather than obscure the content of this disclosure. The terms should not be interpreted as absolute directions, as the apparatus can be oriented in several advantageous orientations. The illustrated embodiment depicts a baffle 310 disposed on the substrate support 306. This configuration represents the orientation of the baffle 310 and the substrate support 306 when a substrate is processed in the chamber 300. Although not shown, the substrate is placed on the substrate support 306 and the baffle 310 covers the substrate such that the substrate's exposure to fluid agitation is minimized.

[0049] The substrate support 306 includes a base plate 402, a plurality of spacers 406, and an annular body 404. The base plate 402 may be circular, and the spacers 406 are circumferentially coupled between the base plate 402 and the annular body 404. In one embodiment, the base plate 402, spacers 406, and annular body 404 may be formed of the same material, such as a metallic or ceramic material. Suitable examples of materials include stainless steel, aluminum, and quartz, among others. In another embodiment, the base plate 402 and annular body 404 may be formed of a metallic material, such as stainless steel, and the spacers 406 may be formed of a polymeric material, such as polytetrafluoroethylene (PTFE).

[0050] The size of the base plate 402 and the annular body 404 can be adjusted to have a diameter larger than the diameter of the substrate on which it is placed. For example, if the substrate has a diameter of 300 mm, the diameters of the annular body 404 and the base plate 402 can be between approximately 305 mm and approximately 310 mm. In some embodiments, the diameter of the baffle 310 can also be larger than the diameter of the substrate. Generally, the baffle 310 is configured to contact and be supported by the annular body 404. The baffle 402 may also include a gap 408, the size of which can be adjusted to intersect with the robotic arm to facilitate the transfer of the baffle 310 via the robotic arm.

[0051] Figure 5 The figure shows a side view of a substrate support 306 and a baffle 310 according to one embodiment described herein. The base plate 402 is generally configured to have a bottom surface 412 and a top surface 414 disposed opposite to the bottom surface 412. Similarly, the annular body 404 is configured to have a bottom surface 416 and a top surface 418 disposed opposite to the bottom surface 416. A spacer 406 may extend from the top surface 414 of the base plate 402 to the bottom surface 416 of the annular body 404 to position the annular body 404 a distance from the base plate 402. A perforation 410 may be formed discontinuously (interrupted by the position of the spacer 406) between the base plate 402 and the annular body 404, and the perforation 410 may be configured to allow fluid to flow radially inward from the circumference of the base plate 402 and the annular body 404. The pores 410 also allow fluid to flow radially outward from the origin of the base plate 402 and the annular body 404 beyond the circumference of the base plate 402 and the annular body 404.

[0052] Figure 6 The illustration shows an exploded planar perspective view of a substrate support 306 and a baffle 310 according to one embodiment described herein. One or more support posts 604 may be coupled to and extend from a lip 606 of a base plate 402. In one embodiment, the lip 606 may include a top surface of the base plate 402. In other embodiments, the lip 606 may be omitted, such that the top surface of the base plate 402 is substantially flat along the entire diameter of the base plate 402. The support posts 604 may be formed of a variety of materials, including polymeric materials such as polytetrafluoroethylene, quartz materials, carbon-containing materials, ceramic materials, and the like. Figure 8 and Figure 9 Let's describe the support column 604 in more detail.

[0053] The baffle 310 includes a top surface 608, and one or more positioning elements 602 may extend from the surface of the baffle 310 oriented relative to the top surface 608. In some embodiments, the positioning elements 602 may be formed of the same material as the support post 604. In other embodiments, the positioning elements 602 may be formed of a metallic material. Generally, the positioning elements 602 are configured to secure and / or prevent lateral movement of the baffle 310 when it is positioned to contact the annular body 404 (see [link to relevant documentation]). Figure 4 Related to Figure 10 Let’s describe the positioning element 602 in more detail.

[0054] Figure 7 The figure shows an exploded bottom perspective view of a substrate support 306 and a baffle 310 according to one embodiment described herein. As shown in the figure, a positioning element 602 is coupled to the bottom surface 702 of the baffle 310 and is positioned around the circumference of the baffle 310.

[0055] Figure 8 The illustration shows a partial perspective view of a substrate support 306 and support pillar 604 according to one embodiment described herein. Although only a single support pillar is shown, multiple support pillars 604 are coupled to a base plate 402. Each support pillar 604 includes a first surface 802, a second surface 804, and a third surface 806. The size of the first surface 802 is adjusted to support the edge of the substrate. In one embodiment, the first surface 802 may be configured to support the device side of the substrate. The first surface 802 may be bent at its inner edge to provide a curved contact surface for supporting the substrate. The curved contact surface may reduce scratches on the substrate by the inner edge of the first surface 802. The second surface 804 may extend from the first surface 802 in a direction orthogonal to orthogonal to the plane defined by the first surface 802. The size of the second surface 804 may be adjusted, and the second surface 804 is configured to prevent lateral movement of the substrate placed on the support pillar 604. The third surface 806 may extend from the second surface 804 in a direction orthogonal to the plane defined by the second surface 804. In this embodiment, the third surface 806 rises above and is parallel to the first surface 802, but the third surface 806 need not be parallel to the first surface 802. The third surface 806 is generally disposed below the top surface 418 of the annular body 404.

[0056] Figure 9The figure shows a partial cross-sectional view of a substrate support 306, a support post 604, and a baffle 310 according to one embodiment described herein. As depicted, the support post 604 may be coupled to a base plate 402. Fasteners 902 (e.g., screws or bolts) may extend through the base plate 402 and may be threadedly coupled to the support post 604. Other fastening methods may also be used, such as press-fitting, gluing, and the like. However, consideration is given to the compatibility of the fastening method used with the temperature, pressure, and chemical properties employed during the phase-changing process in chamber 300.

[0057] like Figure 9 As shown, during assembly, the annular body 404 and the base plate 402 are spaced apart by a spacer 406. In some embodiments, the minimum distance between the annular body 404 and the base plate 402 may be less than the height of the support column 604. While the foregoing embodiments describe a device (e.g., support column 604) to support a substrate, other devices may be considered for supporting the substrate. For example, a ledge member (not shown) may extend radially inward from the annular body 404 or the base plate 402. The ledge member may have a substrate support surface configured to support the device side of the substrate. In one embodiment, the ledge member may be a continuous extension from the inner surface 1006 of the annular body 404 (see...). Figure 10 In another embodiment, the protruding member may be a discontinuous protrusion (i.e., a plurality of separate protrusions) extending from the inner surface 1006. In yet another embodiment, the protruding member may extend from the base plate 402 and may have a aperture formed therein, the aperture aligned with aperture 410 to facilitate fluid flow through aperture 410. Various other substrate support devices (e.g., pins, rings, or other suitable configuration devices) may be advantageously incorporated into the substrate support 306.

[0058] Figure 10 The figure shows a cross-sectional view of a substrate support 306, a spacer 406, and a baffle 310 positioning element according to one embodiment described herein. As previously described, the spacer 406 positions the annular body 404 relative to the base plate 402. The spacer 406 can be coupled between the base plate 402 and the annular body 404 by a fastener 1002. The fastener 1002 can extend through the base plate 402 and the spacer 406 and be threadedly coupled to the annular body 404. Other fastening methods can also be used (e.g., those related above). Figure 9 (As described) a spacer 406 that fixes the base plate 402 and the annular body 404.

[0059] The positioning element 602 can be coupled to the bottom surface 702 of the baffle 310 by the fastener 1004. The fastener 1004 can extend through the baffle 310 and be threadedly coupled to the positioning element 602. Other fastening methods can also be used (e.g., those related above). Figure 9 (As described) a positioning element 602 is fixed to the baffle 310. The positioning element 602 can be coupled to a distance radially inward from the baffle 310 from its circumference. When the baffle 310 is placed on the annular body 404, the area 1008 of the baffle 310 can be configured to contact the annular body 404. The positioning element 602 can be configured to abut the inner surface 1006 of the annular body 404 to prevent lateral movement of the baffle 310 relative to the annular body 404.

[0060] Figure 11 The figure shows a plan view of a substrate support 306 according to one embodiment described herein. Support posts 604 may be coupled to a region surrounding the lip 606 of the base plate 402. In one embodiment, the support posts 604 may be arranged equidistantly from each other, for example, at approximately 120 degrees to each other. In the illustrated embodiment, three support posts 604 are shown; however, a larger number of support posts 604 may also be used.

[0061] It is believed that the embodiments described herein relating to substrate support 306 and baffle 310 can reduce particle deposition on the substrate during solvent exposure, phase change, and / or supercritical processing. Substrate support 306 and baffle 310 can be advantageously implemented in a pressurized chamber, such as chamber 300. By preventing the substrate from being directly exposed to non-laminar fluid flow and agitated fluid flow, particle deposition on the substrate can be avoided. For example, eddy currents may exist in the region near substrate support 306 and baffle 310; however, the internal space defined by substrate support 306 and baffle 310, in which the substrate is placed, can only contain low-velocity or laminar fluid flow. It is also believed that the oriented combination of baffle 310 and the device-side-down oriented substrate can reduce or eliminate particle deposition on the substrate.

[0062] The aforementioned embodiments relating to this disclosure may be modified to other and further embodiments of this disclosure without departing from its basic scope, which is defined by the appended claims.

Claims

1. A substrate support member, comprising: Circular base plate; An annular member coupled to the circular base plate, wherein a plurality of pores are formed between the top surface of the circular base plate and the bottom surface of the annular member, wherein the pores include a gap formed along a first direction between the bottom surface of the annular member and the top surface of the circular base plate; A plurality of support columns are disposed on the top surface of the circular base plate and extend from the circular base plate along the first direction, wherein each support column has a substrate receiving surface, and wherein the gap is less than the height of the support column. and A circular baffle, coupled to the top surface of the annular member, to enclose the substrate placed on the support column, and The pores are configured to allow fluid to flow radially inward from the circumference of the circular base plate and the annular member.

2. The support member as claimed in claim 1, wherein the circular base plate has a lip, and the support column is disposed around the circular base plate at the lip.

3. The support member as claimed in claim 1, wherein the support column is formed of a polymeric material.

4. The support as claimed in claim 1, wherein each substrate receiving surface is a curved surface.

5. A substrate processing assembly, comprising: Circular base plate; An annular member, which is spaced apart from the circular base plate by a plurality of spacers, wherein the spacers extend from the top surface of the circular base plate to a first surface of the annular member, and pores are defined between adjacent spacers; A plurality of support columns are disposed on the top surface of the circular base plate about the central axis of the circular base plate and extend from the circular base plate along a first direction; and A baffle, coupled to a second surface of the annular member opposite the first surface, to enclose the substrate placed on the support column. The pores are configured to allow fluid to flow radially inward from the circumference of the circular base plate and the annular member.

6. The component of claim 5, further comprising a plurality of positioning elements disposed within the circumference of the annular member.

7. The component of claim 6, wherein the positioning element is coupled to the baffle.

8. The component of claim 5, wherein the spacer is formed of a polymeric material.

9. The component of claim 5, wherein the circular base plate has a lip and the support post is positioned at the lip.

10. The component of claim 5, wherein each support post has a substrate receiving surface.

11. The component of claim 10, wherein each substrate receiving surface is curved.

12. The assembly of claim 5, wherein the minimum distance between the annular member and the circular base plate is less than the height of the support column.

13. The component of claim 5, wherein the number of spacers is twice the number of support columns.

14. A substrate support device, comprising: Circular base plate; An annular body, wherein a plurality of spacers are positioned between a first surface of the annular body and a top surface of the circular base plate, wherein a pore is defined between the first surface of the annular body and the top surface of the circular base plate; Multiple support columns are arranged on the top surface of the circular base plate around the central axis of the circular base plate; A circular baffle is coupled to a second surface of the annular body opposite to the first surface to enclose the substrate placed on the support column; and Multiple positioning elements are disposed within the circumference of the annular body. The pores are configured to allow fluid to flow radially inward from the circumference of the circular base plate and the annular body.

15. The device of claim 14, wherein the circular base plate has a lip, and the support column is coupled to the circular base plate at the lip.

16. The device of claim 14, wherein the spacer is formed of a polymeric material.

17. The device of claim 14, wherein each support post has a substrate receiving surface.

18. The device of claim 17, wherein the substrate receiving surface is curved.

19. The device of claim 14, wherein the minimum distance between the annular body and the circular base plate is less than the height of the support column.

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