Flexible electronic device and method of manufacturing the same

Abstract

A flexible electronic device and a manufacturing method thereof are disclosed. The flexible electronic device includes a conductive isolation layer, a flexible substrate, an element layer, and a back film. The conductive isolation layer has opposite first and second edges. The flexible substrate is disposed on the conductive isolation layer. An active region of the flexible substrate is located on the conductive isolation layer. At least a portion of the first edge of the flexible substrate is substantially flush with at least a portion of the first edge of the conductive isolation layer. An active element region of the element layer is located on the active region of the flexible substrate. A contact pad region of the element layer is located on a first peripheral region of the flexible substrate. The back film is disposed on a bottom surface of the conductive isolation layer.

Description

Technical Field

[0001] This invention relates to an electronic device and a method for manufacturing the same, and more particularly to a flexible electronic device and a method for manufacturing the same. Background Technology

[0002] Compared to display panels made of rigid substrates (such as glass substrates), flexible substrates (such as plastic substrates) have a wider range of applications due to their flexibility and impact resistance. In recent years, active components have been fabricated on flexible substrates, thereby forming various flexible display panels.

[0003] Generally, the manufacturing process of flexible display panels involves first fixing a flexible substrate onto a glass carrier. Then, a component layer, including pixel structures, is formed on the flexible substrate. After the component layer is complete, the flexible substrate is released from the glass carrier to remove it, including the flexible substrate and the component layer. A conductive release layer prevents electrostatic discharge (ESD) damage to the active component area (TFT) caused by static electricity buildup during separation of the flexible substrate from the glass carrier. Currently, due to the need for alignment and observation of conductive particle indentations in the component layer pad area, the light transmittance of the release layer is subject to certain requirements. This results in the conductive release layer being placed only below the active area of ​​the flexible substrate. However, during the removal of the flexible substrate and its pixel structure, a sudden increase in release force occurs when transitioning from the insulating release area to the conductive release area, which is detrimental to the yield rate of component layer removal. Summary of the Invention

[0004] This invention provides a method for manufacturing a flexible electronic device, which can improve yield and production capacity.

[0005] This invention provides a flexible electronic device with high yield.

[0006] This invention provides another method for manufacturing flexible electronic devices, which can improve yield and production capacity.

[0007] This invention provides another flexible electronic device with high yield.

[0008] A method for manufacturing a flexible electronic device according to an embodiment of the present invention includes the following steps: forming an insulating release layer on a rigid substrate; forming a conductive release layer on the insulating release layer; forming a flexible substrate on the conductive release layer and the insulating release layer, wherein the flexible substrate has a release initiation region, an active region, and a first peripheral region, the active region being located between the release initiation region and the first peripheral region, and the release initiation region and the active region of the flexible substrate being located above the conductive release layer; forming a component layer on the flexible substrate, wherein the component layer has an active component region and a pad region, the active component region of the component layer being located on the active region of the flexible substrate, and the pad region of the component layer being located on the first peripheral region of the flexible substrate; cutting the flexible substrate and the conductive release layer along a first cutting path on the release initiation region of the flexible substrate to form a first edge of the flexible substrate and a first edge of the conductive release layer. At least a portion thereof, wherein at least a portion of the first edge of the flexible substrate is substantially flush with at least a portion of the first edge of the conductive release layer; the conductive release layer and the insulating release layer are separated along the release direction and the first peripheral region of the flexible substrate and the insulating release layer are separated to expose the bottom surface of the conductive release layer and the bottom surface of the first peripheral region of the flexible substrate, wherein the release direction points from at least a portion of the first edge of the flexible substrate to the first peripheral region of the flexible substrate; a back film is formed on the bottom surface of the conductive release layer and the bottom surface of the first peripheral region of the flexible substrate; and the flexible substrate is cut along a second dicing path on the first peripheral region of the flexible substrate to form a second edge of the flexible substrate, wherein the conductive release layer has a second edge disposed opposite to the first edge of the conductive release layer, and at least a portion of the second edge of the conductive release layer is offset from the second edge of the flexible substrate.

[0009] A flexible electronic device according to an embodiment of the present invention includes a conductive release layer, a flexible substrate, a component layer, and a back film. The conductive release layer has opposing first edges and second edges. The flexible substrate is disposed on the conductive release layer, wherein the flexible substrate has an active region and a first peripheral region, the active region of the flexible substrate being located on the conductive release layer, and at least a portion of the first peripheral region of the flexible substrate being located outside the conductive release layer. The flexible substrate has opposing first edges and second edges, at least a portion of the first edge of the flexible substrate being substantially flush with at least a portion of the first edge of the conductive release layer, and at least a portion of the second edge of the conductive release layer being offset from the second edge of the flexible substrate. The component layer has an active component region and a pad region. The active component region of the component layer is located on the active region of the flexible substrate, and the pad region of the component layer is located on the first peripheral region of the flexible substrate. The back film is disposed on the bottom surface of the conductive release layer and the bottom surface of the first peripheral region of the flexible substrate.

[0010] A method for manufacturing a flexible electronic device according to another embodiment of the present invention includes the following steps: forming an insulating release layer on a rigid substrate; forming a conductive release layer on the insulating release layer, wherein the conductive release layer includes at least a first thin portion, a first thick portion, a second thick portion, and a third thick portion, the at least one first thin portion being disposed within the first thick portion, and the second thick portion being connected between the first thick portion and the third thick portion; forming a flexible substrate on the conductive release layer and the insulating release layer, wherein the flexible substrate has a release initiation region, an active region, and a first peripheral region, the active region being located between the release initiation region and the first peripheral region, the first peripheral region of the flexible substrate being disposed on at least one first thin portion and the first thick portion of the conductive release layer, the active region of the flexible substrate being located on the second thick portion of the conductive release layer, and the release initiation region of the flexible substrate being at least disposed on the third thick portion of the conductive release layer; forming a component layer on the flexible substrate, wherein the component layer has an active component region and a pad region, the active component region of the component layer... Located on the active region of the flexible substrate, and the pad region of the component layer is located on the first peripheral region of the flexible substrate; the flexible substrate and the third thick portion of the conductive release layer are cut along a first dicing path on the release initiation region of the flexible substrate to form at least a portion of the first edge of the flexible substrate and the first edge of the conductive release layer, wherein at least a portion of the first edge of the flexible substrate is substantially flush with at least a portion of the first edge of the conductive release layer; the conductive release layer and the insulating release layer are separated along the release direction to expose the bottom surface of the conductive release layer, wherein the release direction points from the first edge of the flexible substrate to the first peripheral region of the flexible substrate; a back film is formed on the bottom surface of the conductive release layer; at least a first thin portion and a first thick portion of the flexible substrate and the conductive release layer are cut along a second dicing path on the first peripheral region of the flexible substrate to form the second edge of the flexible substrate and the second edge of the conductive release layer, wherein the second edge of the flexible substrate is substantially flush with the second edge of the conductive release layer.

[0011] Another embodiment of the flexible electronic device of the present invention includes a conductive release layer, a flexible substrate, a component layer, and a back film. The conductive release layer includes at least a first thin portion, a first thick portion, a second thick portion, and a third thick portion, with the at least one first thin portion disposed within the first thick portion, and the second thick portion connected between the first thick portion and the third thick portion. The flexible substrate is disposed on the conductive release layer. The flexible substrate has an active region and a first peripheral region. The active region of the flexible substrate is located on the second thick portion of the conductive release layer. The first peripheral region of the flexible substrate is located on at least one first thin portion and the first thick portion of the conductive release layer. The component layer has an active component region and a pad region, with the active component region of the component layer located on the active region of the flexible substrate, and the pad region of the component layer located on the first peripheral region of the flexible substrate. The back film is disposed on the bottom surface of the conductive release layer. Attached Figure Description

[0012] Figures 1A to 1L This is a cross-sectional schematic diagram of the manufacturing process of a flexible electronic device 10 according to an embodiment of the present invention.

[0013] Figure 2 for Figure 1G A schematic diagram of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130, a flexible substrate 140, and a component layer 150.

[0014] Figure 3 Show Figure 1H A schematic diagram of the conductive release layer 130, the flexible substrate 140, and the element layer 150.

[0015] Figure 4 This is a top view schematic diagram of a finely cut flexible electronic device 10 according to an embodiment of the present invention;

[0016] Figure 5 This is a cross-sectional schematic diagram of a finely cut flexible electronic device 10 according to an embodiment of the present invention.

[0017] Figure 6 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130A, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0018] Figure 7 This is a cross-sectional schematic diagram of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130A, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0019] Figure 8 This is a cross-sectional schematic diagram of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130A, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0020] Figure 9 For self Figure 6 A schematic diagram of the conductive release layer 130A, flexible substrate 140, and component layer 150 removed from the rigid substrate 110.

[0021] Figure 10 This is a top view schematic diagram of a finely cut flexible electronic device 10A according to another embodiment of the present invention;

[0022] Figure 11 This is a cross-sectional schematic diagram of a flexible electronic device 10A according to another embodiment of the present invention;

[0023] Figure 12 This is a cross-sectional schematic diagram of a flexible electronic device 10A according to another embodiment of the present invention;

[0024] Figure 13 This is a cross-sectional schematic diagram of a flexible electronic device 10A according to another embodiment of the present invention;

[0025] Figure 14 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130B, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0026] Figure 15 This is a cross-sectional schematic diagram of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130B, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0027] Figure 16 This is a cross-sectional schematic diagram of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130B, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0028] Figure 17 for Figure 14 A schematic diagram of the conductive release layer 130B, flexible substrate 140, and component layer 150 removed from the rigid substrate 110.

[0029] Figure 18 This is a top view schematic diagram of a finely cut flexible electronic device 10B according to another embodiment of the present invention.

[0030] Figure 19 This is a cross-sectional schematic diagram of a flexible electronic device 10B according to another embodiment of the present invention.

[0031] Figure 20 This is a cross-sectional schematic diagram of a flexible electronic device 10B according to another embodiment of the present invention.

[0032] Figure 21 This is a cross-sectional schematic diagram of a flexible electronic device 10B according to another embodiment of the present invention.

[0033] Figure 22 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130C, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0034] Figure 23 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130D, a flexible substrate 140, and a component layer 150 according to an embodiment of the present invention.

[0035] Figure 24 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130E, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0036] Figure 25This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130F, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0037] Figure 26 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130G, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention.

[0038] Figure 27 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130H, a flexible substrate 140, and a component layer 150 according to an embodiment of the present invention.

[0039] Figure 28 This is a top view schematic diagram of a flexible electronic device 10I according to another embodiment of the present invention;

[0040] Figure 29 This is a cross-sectional schematic diagram of a flexible electronic device 10I according to another embodiment of the present invention.

[0041] Figure 30 This is a cross-sectional schematic diagram of a flexible electronic device 10I according to another embodiment of the present invention.

[0042] Figure 31 This is a top view schematic diagram of a flexible electronic device 10J according to another embodiment of the present invention;

[0043] Figure 32 This is a cross-sectional schematic diagram of a flexible electronic device 10J according to another embodiment of the present invention.

[0044] Figure 33 This is a cross-sectional schematic diagram of a flexible electronic device 10J according to another embodiment of the present invention.

[0045] Symbol Explanation

[0046] 10, 10A, 10B, 10I, 10J: Flexible electronic devices

[0047] 110: Rigid substrate

[0048] 120: Insulating Release Layer

[0049] 130, 130A, 130B, 130C, 130D, 130E, 130F, 130G, 130H: Conductive release layer

[0050] 130': Conductive release material layer

[0051] 130a, 140a: First edge

[0052] 130b, 140b: Second edge

[0053] 130c, 140c: Third edge

[0054] 130d, 140d: Fourth Edge

[0055] 130h1: First opening

[0056] 130h1c: Corner

[0057] 130h1e, 130s1e, 131e, 134e: Edge

[0058] 130h2: Second opening

[0059] 130s, 143s: bottom surface

[0060] 130s1: First Entity

[0061] 130s2: Second Entity

[0062] 130s3: Third Entity

[0063] 131: First Thick Part

[0064] 132: Second Thick Part

[0065] 133: Third Thick Part

[0066] 134: First Thin Section

[0067] 140, 140I, 140J: Flexible substrate

[0068] 140b-1: Partial

[0069] 140b-2: Another part

[0070] 141: Release Initiation Zone

[0071] 142: Active Zone

[0072] 143: First Surrounding Area

[0073] 144: Second Surrounding Area

[0074] 145: Third Surrounding Area

[0075] 150, 150I, 150J: Component Layer

[0076] 152: Active (Powered) Components Area

[0077] 153: Pad Area

[0078] 154: Another padding area

[0079] 155: Another padding area

[0080] 160: Backing membrane

[0081] 200: Carrier membrane

[0082] A: Distance

[0083] C1: First Cutting Channel

[0084] C2: Second Cutting Channel

[0085] C3: Third Cutting Channel

[0086] C4: Fourth Cutting Channel

[0087] d: Release direction

[0088] d1: First direction

[0089] d2: Second direction

[0090] I: Boundary

[0091] PR: Photoresist

[0092] T131, T134: Thickness

[0093] U: Chip unit

[0094] I-I', II-II', III-III', IV-IV', V-V', VI-VI', VII-VII', VIII-VIII', IX-IX', X-X', XI-XI', XII-XII', XIII-XIII', XIV-XIV', XV-XV', XVI-XVI': section line Detailed Implementation

[0095] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element references are used in the drawings and description to denote the same or similar parts.

[0096] It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another element, it may be directly on or connected to the other element, or an intermediate element may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected" to another element, no intermediate element is present. As used herein, "connection" can refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may involve the presence of other elements between the two elements.

[0097] As used herein, “about,” “approximately,” or “substantially” includes the value and the average value within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurement under discussion and a particular number of errors associated with the measurement (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations of the value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the use of “about,” “approximately,” or “substantially” herein may be chosen based on the optical, etched, or other properties to select a more acceptable range of deviations or standard deviations, and may not require a single standard deviation to apply to all properties.

[0098] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and this invention, and will not be interpreted as having idealized or overly formal meanings unless expressly defined herein.

[0099] Figures 1A to 1L This is a cross-sectional schematic diagram of the manufacturing process of a flexible electronic device 10 according to an embodiment of the present invention.

[0100] Please refer to Figure 1A First, an insulating release layer 120 is formed on a rigid substrate 110. For example, in this embodiment, the material of the rigid substrate 110 may be glass, quartz or other suitable materials; the material of the insulating release layer 120 may be an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, or a stack of at least two of the above materials), but the present invention is not limited thereto.

[0101] Please refer to Figures 1B to 1D Next, a conductive release layer 130 is formed on the insulating release layer 120. Specifically, a conductive release material layer 130' may first be formed on the insulating release layer 120; then, a photoresist PR may be formed on the conductive release material layer 130'; then, using the photoresist PR as a mask, the conductive release material layer 130' may be patterned to form the conductive release layer 130, and the photoresist PR on the conductive release layer 130 may be removed. For example, in this embodiment, the conductive release layer 130 may include organic sublayers and metal sublayers sequentially stacked on the insulating release layer 120, but the invention is not limited thereto.

[0102] Please refer to Figure 1ENext, a flexible substrate 140 is formed on the conductive release layer 130 and the insulating release layer 120. The flexible substrate 140 has a release initiation region 141, an active region 142 and a first peripheral region 143. The active region 142 is located between the release initiation region 141 and the first peripheral region 143, and the release initiation region 141 and the active region 142 are located above the conductive release layer 130.

[0103] For example, in this embodiment, the flexible substrate 140 may be made of an organic polymer, such as polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), polyether sulfone (PES), or polyarylate, or other suitable materials, or combinations of at least two of the foregoing materials, but the present invention is not limited thereto.

[0104] Please refer to Figure 1F Next, a component layer 150 is formed on the flexible substrate 140. The component layer 150 has an active component region 152 and a pad region 153. The active component region 152 of the component layer 150 is located on the active region 142 of the flexible substrate 140. The active component region 152 of the component layer 150 overlaps with the conductive release layer 130. The conductive release layer 130 reduces the probability of the component layer 150 being damaged by electrostatic discharge. The pad region 153 of the component layer 150 is located on the first peripheral region 143 of the flexible substrate 140. For example, in this embodiment, the pad region 153 of the component layer 150 may be located outside the area of ​​the conductive release layer 130. That is, the conductive release layer 130 does not cover the pad region 153 of the component layer 150. Therefore, in subsequent manufacturing processes, after the pad area 153 of the component layer 150 is bonded to the electronic component (not shown), the bonding status between the pad area 153 of the component layer 150 and the electronic component can be observed from below the flexible substrate 140 upwards, which helps to monitor quality.

[0105] Figure 2 Show Figure 1G The rigid substrate 110, insulating release layer 120, conductive release layer 130, flexible substrate 140, and component layer 150 are described. Please refer to... Figure 1G and Figure 2Next, the flexible substrate 140 and the conductive release layer 130 are cut along the first dicing path C1 on the release initiation region 141 of the flexible substrate 140 to form a first edge 140a of the flexible substrate 140 and at least a portion of the first edge 130a of the conductive release layer 130, wherein at least a portion of the first edge 140a of the flexible substrate 140 is substantially flush with at least a portion of the first edge 130a of the conductive release layer 130. In this embodiment, the entire first edge 130a of the conductive release layer 130 is substantially flush with a portion of the first edge 140a of the flexible substrate 140, but the present invention is not limited thereto.

[0106] Figure 3 Show Figure 1H The conductive release layer 130, flexible substrate 140, and component layer 150 are described. Please refer to... Figure 1G , Figure 1H , Figure 2 and Figure 3 Next, starting from the location of the first cutting channel C1, the conductive release layer 130 and the insulating release layer 120 are separated along the release direction d, and the first peripheral region 143 of the flexible substrate 140 and the insulating release layer 120 are also separated to expose the bottom surface 130s of the conductive release layer 130 and the bottom surface 143s of the first peripheral region 143 of the flexible substrate 140. The release direction d points from at least a portion of the first edge 140a of the flexible substrate 140 to the first peripheral region 143 of the flexible substrate 140. Specifically, in this embodiment, a carrier film 200 can be used to attach the element layer 150, and the carrier film 200 can be used to pull the element layer 150, the flexible substrate 140, and the conductive release layer 130 from the insulating release layer 120.

[0107] It is worth mentioning that during the process of separating the insulating release layer 120 and the conductive release layer 130 along the release direction d and separating the first peripheral region 143 of the flexible substrate 140 and the insulating release layer 120, the separation transitions from separating the insulating release layer 120 and the conductive release layer 130 to separating the insulating release layer 120 and the first peripheral region 143 of the flexible substrate 140, thus avoiding the situation where the separation force must suddenly increase, thereby improving the yield of removing the component layer 150.

[0108] Please refer to Figure 1I Next, a back film 160 is formed on the bottom surface 130s of the conductive release layer 130 and the bottom surface 143s of the first peripheral region 143 of the flexible substrate 140. Please refer to... Figure 1I and Figure 1J Next, the carrier film 200 is removed from the element layer 150.

[0109] Figure 3 Show Figure 1K The conductive release layer 130, the flexible substrate 140, and the component layer 150. Figure 4This is a top view schematic diagram of a finely cut flexible electronic device 10 according to an embodiment of the present invention. Figure 1L correspond Figure 4 The section line I-I'. Figure 5 This is a cross-sectional schematic diagram of a finely cut flexible electronic device 10 according to an embodiment of the present invention. Figure 5 correspond Figure 4 Section II-II'.

[0110] Please refer to Figure 1K , Figure 1L , Figure 3 and Figure 4 Next, a fine cutting process is performed to complete the flexible electronic device 10. The fine cutting process includes cutting the flexible substrate 140 along a second cutting path C2 on the first peripheral region 143 of the flexible substrate 140 to form a second edge 140b of the flexible substrate 140. Please refer to... Figure 1L and Figure 4 The conductive release layer 130 has a second edge 130b disposed opposite to a first edge 130a of the conductive release layer 130, and at least a portion of the second edge 130b of the conductive release layer 130 is offset from the second edge 140b of the flexible substrate 140. Please refer to... Figure 3 and Figure 4 For example, in this embodiment, the second cutting channel C2 may be outside the conductive release layer 130, and the second edge 130b of the conductive release layer 130 and the second edge 140b of the flexible substrate 140 may be completely offset, but the present invention is not limited thereto.

[0111] Please refer to Figure 3 In this embodiment, the flexible substrate 140 further includes a second peripheral region 144 and a third peripheral region 145 located on opposite sides of the active region 142. The active region 142 and the first peripheral region 143 are arranged in a first direction d1, and the second peripheral region 144, the active region 142, and the third peripheral region 145 are arranged in a second direction d2, wherein the first direction d1 and the second direction d2 are staggered. In this embodiment, the element layer 150 may also optionally include another pad region 154 disposed on the third peripheral region 145 of the flexible substrate 140. Please refer to... Figure 3 , Figure 4 and Figure 5 In this embodiment, the fine cutting process may further include cutting the flexible substrate 140 along the third cutting path C3 on the second peripheral region 144 and the fourth cutting path C4 on the third peripheral region 145 of the flexible substrate 140 to form the third edge 140c and the fourth edge 140d of the flexible substrate 140.

[0112] Please refer to Figure 4The third edge 140c of the flexible substrate 140 is connected between the first edge 140a and the second edge 140b of the flexible substrate 140. The fourth edge 140d of the flexible substrate 140 is connected between the first edge 140a and the second edge 140b of the flexible substrate 140 and is located opposite to the third edge 140c. The third edge 130c of the conductive release layer 130 is connected between the first edge 130a and the second edge 130b of the conductive release layer 130. The fourth edge 130d of the conductive release layer 130 is connected between the first edge 130a and the second edge 130b of the conductive release layer 130 and is located opposite to the third edge 130c. Please refer to... Figure 4 and Figure 5 In this embodiment, the pad area of ​​the element layer 150 may be selectively omitted next to the third edge 130c of the conductive release layer 130, and the third edge 130c of the conductive release layer 130 and the third edge 140c of the flexible substrate 140 may be substantially flush, but the present invention is not limited thereto. In this embodiment, another pad area 154 of the element layer 150 may be selectively provided next to the fourth edge 130d of the conductive release layer 130, and the fourth edge 130d of the conductive release layer 130 and the fourth edge 140d of the flexible substrate 140 may be offset, but the present invention is not limited thereto.

[0113] It must be noted that the following embodiments use the component reference numerals and some content from the foregoing embodiments, with the same reference numerals used to represent the same or similar components, and descriptions of the same technical content omitted. For explanations of the omitted parts, please refer to the foregoing embodiments; these will not be repeated in the following embodiments.

[0114] Figure 6 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130A, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 7 This is a cross-sectional schematic diagram of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130A, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 7 correspond Figure 6 Section III-III'. Figure 8 This is a cross-sectional schematic diagram of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130A, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 8 correspond Figure 6 Section IV-IV'. In particular, Figure 6 , Figure 7 and Figure 8 This shows the conductive release layer 130A, the flexible substrate 140, and the element layer 150, which have not yet been removed from the rigid substrate 110 and have not yet been finely cut.

[0115] Please refer to Figure 6 , Figure 7 and Figure 8 In this embodiment, the conductive release layer 130A has at least one first opening 130h1, a first entity 130s1 and a second entity 130s2. The first entity 130s1 defines at least one first opening 130h1. The first peripheral region 143 of the flexible substrate 140 is located on the at least one first opening 130h1 and the first entity 130s1 of the conductive release layer 130A, and the active region 142 of the flexible substrate 140 is located on the second entity 130s2 of the conductive release layer 130.

[0116] In this embodiment, the conductive release layer 130A may selectively have at least one second opening 130h2 and a third entity 130s3 defining the at least one second opening 130h2, and the release initiation region 141 of the flexible substrate 140 may be disposed on the at least one second opening 130h2 and the third entity 130s3. In this embodiment, the first cleaving ridge C1 located on the release initiation region 141 of the flexible substrate 140 may selectively intersect with the at least one second opening 130h2 and the third entity 130s3 defining the at least one second opening 130h2 of the conductive release layer 130. However, the present invention is not limited thereto. In another embodiment, the conductive release layer 130A may not have the second opening 130h2, and the first cleaving ridge C1 may only intersect with the entity of the conductive release layer 130.

[0117] Please refer to Figure 6 In this embodiment, the conductive release layer 130A, flexible substrate 140, and element layer 150 disposed on a large rigid substrate 110 may include multiple chip units U. It is noteworthy that multiple chip units U adjacent in the release direction d have interconnected conductive release layers 130A. That is, at the junction I of multiple adjacent chip units U in the release direction d, at least a portion of the insulating release layer 120 is in contact with the solid conductive release layer 130A, and not all of them are in contact with the flexible substrate 140. Therefore, when separating the insulating release layer 120 from the conductive release layer 130A and separating the insulating release layer 120 from the flexible substrate 140 stepwise along the release direction d, at least a portion of the interface I between adjacent chip units U will not encounter a situation where the interface between the conductive release layer 130 and the insulating release layer 120 completely transforms into the interface between the flexible substrate 140 and the insulating release layer 120, resulting in a sudden increase in separation force. Thus, multiple chip units U can be removed at once, and the yield of removing the component layer 150 is improved.

[0118] Please refer to Figure 6In this embodiment, at least one first opening 130h1 of the conductive release layer 130 has a corner 130h1c, and the radius of curvature of the corner 130h1c is greater than 0.5 mm. In this embodiment, at least one first opening 130h1 of the conductive release layer 130 may optionally be a plurality of first openings 130h1, with adjacent plurality of first openings 130h1 separated by a distance A, and the distance A is greater than or equal to 1 mm. In this embodiment, the shape of the first opening 130h1 is, for example, elliptical. However, the present invention is not limited thereto, and in other embodiments, the first opening 130h1 may also be other shapes.

[0119] Figure 9 Showing self Figure 6 The conductive release layer 130A, flexible substrate 140, and component layer 150 are removed from the rigid substrate 110. Figure 10 This is a top view of a finely cut flexible electronic device 10A according to another embodiment of the present invention. Figure 11 This is a cross-sectional schematic diagram of a flexible electronic device 10A according to another embodiment of the present invention. Figure 11 correspond Figure 10 The cross section V-V'. Figure 12 This is a cross-sectional schematic diagram of a flexible electronic device 10A according to another embodiment of the present invention. Figure 12 correspond Figure 10 The section line VI-VI'. Figure 13 This is a cross-sectional schematic diagram of a flexible electronic device 10A according to another embodiment of the present invention. Figure 13 correspond Figure 10 Section VII-VII'.

[0120] Please refer to Figure 6 , Figure 9 , Figure 10 and Figure 11 Starting from the first cutting path C1, after removing the conductive release layer 130A, flexible substrate 140, and component layer 150 from the rigid substrate 110 along the release direction d, it can be finely cut and a back film 160 can be attached to form a flexible electronic device 10A. Please refer to... Figure 6 , Figure 7 , Figure 8 , Figure 9 , Figure 10 and Figure 11 The fine cutting process includes: cutting the flexible substrate 140 along the second cutting path C2 on the first peripheral region 143 of the flexible substrate 140 to form the second edge 140b of the flexible substrate 140 (marked in...). Figure 10In this embodiment, the second cleaving channel C2 is located on at least one first opening 130h1 and the first solid 130s1 of the conductive release layer 130. While the flexible substrate 140 is cut along the second cleaving channel C2 on the first peripheral region 143 of the flexible substrate 140 to form the second edge 140b of the flexible substrate 140, the first solid 130s1 of the conductive release layer 130 is also cut to form the edge 130s1e of the first solid 130s1 of the conductive release layer 130 (marked in...). Figure 10 and Figure 12 Please refer to... Figure 10 , Figure 12 and Figure 13 In this embodiment, the second edge 130b of the conductive release layer 130A includes the edge 130s1e of the first entity 130s1 of the conductive release layer 130 and the edge 130h1e of at least one first opening 130h1. A portion 140b-1 of the second edge 140b of the flexible substrate 140 is substantially flush with the edge 130s1e of the first entity 130s1 of the conductive release layer 130, and another portion 140b-2 of the second edge 140b of the flexible substrate 140 is offset from the edge 130h1e of at least one first opening 130h1.

[0121] Figure 14 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130B, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 15 This is a cross-sectional schematic diagram of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130B, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 15 correspond Figure 14 Section VIII-VIII'. Figure 16 This is a cross-sectional schematic diagram of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130B, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 16 correspond Figure 14 The section line IX-IX'. In particular, Figure 14 , Figure 15 and Figure 16 This shows the conductive release layer 130B, the flexible substrate 140, and the element layer 150, which have not yet been removed from the rigid substrate 110 and have not yet been finely cut. Figure 17 Showing self Figure 14 The conductive release layer 130B, flexible substrate 140, and component layer 150 are removed from the rigid substrate 110.

[0122] Please refer to Figure 14 , Figure 15 and Figure 16In this embodiment, the conductive release layer 130B includes at least one first thin portion 134, a first thick portion 131, a second thick portion 132, and a third thick portion 133. The at least one first thin portion 134 is disposed within the first thick portion 131, and the second thick portion 132 is connected between the first thick portion 131 and the third thick portion 133. The flexible substrate 140 has a release initiation region 141, an active region 142, and a first peripheral region 143. The active region 142 is located between the release initiation region 141 and the first peripheral region 143. The first peripheral region 143 of the flexible substrate 140 is disposed on at least one first thin portion 134 and the first thick portion 131 of the conductive release layer 130B. The active region 142 of the flexible substrate 140 is located on the second thick portion 132 of the conductive release layer 130B, and the release initiation region 141 of the flexible substrate 140 is disposed on the third thick portion 133 of the conductive release layer 130B.

[0123] Please refer to Figure 14 and Figure 17 In this embodiment, the flexible substrate 140 and the third thickness 133 of the conductive release layer 130B can be cut along the first cutting path C1 on the release start area 141 of the flexible substrate 140 to form at least a portion of the first edge 140a of the flexible substrate 140 and the first edge 130a of the conductive release layer 130B, wherein at least a portion of the first edge 140a of the flexible substrate 140 is substantially flush with at least a portion of the first edge 130a of the conductive release layer 130B.

[0124] Figure 18 This is a top view of a finely cut flexible electronic device 10B according to another embodiment of the present invention. Figure 19 This is a cross-sectional schematic diagram of a flexible electronic device 10B according to another embodiment of the present invention. Figure 19 correspond Figure 18 The section line X-X'. Figure 20 This is a cross-sectional schematic diagram of a flexible electronic device 10B according to another embodiment of the present invention. Figure 20 correspond Figure 18 The section line XI-XI'. Figure 21 This is a cross-sectional schematic diagram of a flexible electronic device 10B according to another embodiment of the present invention. Figure 21 correspond Figure 18 The section line XII-XII'.

[0125] Please refer to Figure 14 , Figure 17 , Figure 18 and Figure 19 Starting from the first cutting path C1, after removing the conductive release layer 130B, flexible substrate 140, and component layer 150 from the rigid substrate 110 along the release direction d, it can be finely cut and a back film 160 can be attached to form a flexible electronic device 10B. Please refer to... Figure 14, Figure 15 , Figure 16 , Figure 17 , Figure 18 , Figure 19 , Figure 20 and Figure 21 The fine cutting process includes: cutting at least one first thin portion 134 and a first thick portion 131 of the flexible substrate 140 and the conductive release layer 130B along the second cutting path C2 on the first peripheral region 143 of the flexible substrate 140 to form the second edge 140b of the flexible substrate 140 (marked in...). Figure 18 , Figure 20 and Figure 21 ) and the second edge 130b of the conductive release layer 130B (marked in Figure 18 , Figure 20 and Figure 21 The second edge 140b of the flexible substrate 140 is substantially flush with the second edge 130b of the conductive release layer 130B. The second edge 130b of the conductive release layer 130B includes the edge 134e of at least a first thin portion 134 of the conductive release layer 130B and the edge 131e of the first thick portion 131 of the conductive release layer 130B. The second edge 140b of the flexible substrate 140 is substantially flush with the edge 134e of at least a first thin portion 134 of the conductive release layer 130B and the edge 131e of the first thick portion 131 of the conductive release layer 130B.

[0126] Please refer to Figure 18 and Figure 19 In this embodiment, the thickness T134 of the first thin portion 134 of the conductive release layer 130B is very thin and light-transmitting. In subsequent fabrication processes, after the pad area 153 of the component layer 150 is bonded to the electronic component (not shown), the bonding status of the pad area 153 of the component layer 150 to the electronic component can be observed from below the flexible substrate 140 through the first thin portion 134 of the conductive release layer 130B, which helps in quality monitoring. For example, in this embodiment, the thickness T131 of the first thick portion 131 of the conductive release layer 130B is greater than or equal to 0.15 μm and less than or equal to 0.2 μm, and the thickness T134 of at least one first thin portion 134 of the conductive release layer 130B is greater than or equal to 0.01 μm and less than or equal to 0.05 μm, but the invention is not limited thereto.

[0127] Figure 22 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130C, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 22 Implementation examples and Figure 6 The embodiments are similar, the difference being: Figure 22The conductive release layer 130C has at least a first opening 130h1 including a plurality of rhomboid first openings 130h1, and the pad region 153 of the element layer 150 may overlap with the plurality of rhomboid first openings 130h1.

[0128] Figure 23 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130D, a flexible substrate 140, and a component layer 150 according to an embodiment of the present invention. Figure 23 Implementation examples and Figure 6 The embodiments are similar, the difference being: Figure 23 The conductive release layer 130D has at least a first opening 130h1 in the shape of a parallelogram, and the pad area 153 of the element layer 150 may overlap with the first opening 130h1 in the shape of a parallelogram.

[0129] Figure 24 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130E, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 24 Implementation examples and Figure 6 The embodiments are similar, the difference being: Figure 24 The conductive release layer 130E has at least a first opening 130h1, which is hexagonal, and the pad region 153 of the element layer 150 may overlap with the hexagonal first opening 130h1.

[0130] Figure 25 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130F, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 25 Implementation examples and Figure 14 The embodiments are similar, the difference being: Figure 14 The first thin portion 134 of the conductive release layer 130B is generally elliptical, while Figure 25 The first thin portion 134 of the conductive release layer 130F is generally in the shape of multiple rhombuses.

[0131] Figure 26 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130G, a flexible substrate 140, and a component layer 150, according to another embodiment of the present invention. Figure 26 Implementation examples and Figure 14 The embodiments are similar, the difference being: Figure 14 The first thin portion 134 of the conductive release layer 130B is generally elliptical, while Figure 26 The first thin portion 134 of the conductive release layer 130G is generally parallelogram-shaped.

[0132] Figure 27 This is a top view of a rigid substrate 110, an insulating release layer 120, a conductive release layer 130H, a flexible substrate 140, and a component layer 150, according to an embodiment of the present invention. Figure 27 Implementation examples and Figure 14 The embodiments are similar, the difference being: Figure 14 The first thin portion 134 of the conductive release layer 130B is generally elliptical, while Figure 27 The first thin portion 134 of the conductive release layer 130H is generally hexagonal.

[0133] It should be noted that the aforementioned Figures 6 to 27 Several embodiments are illustrated by examples where the conductive release layers 130A-130H, the flexible substrate 140, and the element layer 150 on a large rigid substrate 110 may include multiple chip units U. However, the present invention is not limited thereto, and the foregoing... Figures 6 to 27 In several embodiments, the large rigid substrate 110 may also be provided with a single chip unit U, depending on the size of the chip unit U.

[0134] Figure 28 This is a top view schematic diagram of a flexible electronic device 10I according to another embodiment of the present invention. Figure 29 This is a cross-sectional schematic diagram of a flexible electronic device 10I according to another embodiment of the present invention. Figure 29 correspond Figure 28 The section line XIII-XIII'. Figure 30 This is a cross-sectional schematic diagram of a flexible electronic device 10I according to another embodiment of the present invention. Figure 30 correspond Figure 28 The section line XIV-XIV'.

[0135] Figure 28 , Figure 29 and Figure 30 The flexible electronic device 10I and the aforementioned Figure 4 , Figure 1L and Figure 5 Similar to the flexible electronic device 10, the difference between the two is: Figure 28 , Figure 29 and Figure 30 The flexible substrate 140I and the component layer 150I of the flexible electronic device 10I and Figure 4 , Figure 1L and Figure 5 The flexible substrate 140 and component layer 150 of the flexible electronic device 10 are different.

[0136] Please refer to Figure 28 , Figure 29 and Figure 30Specifically, in this embodiment, the flexible substrate 140I further includes a second peripheral region 144 (labeled as...). Figure 30 The second peripheral region 144 and the third peripheral region 145 of the flexible substrate 140I are located on opposite sides of the active region 142 of the flexible substrate 140I. The active region 142 and the first peripheral region 143 of the flexible substrate 140I are arranged in a first direction d1, and the second peripheral region 144, the active region 142 and the third peripheral region 145 of the flexible substrate 140I are arranged in a second direction d2, and the first direction d1 and the second direction d2 are staggered. The component layer 150I also includes another pad region 155 disposed on the second peripheral region 144 of the flexible substrate 140.

[0137] In this embodiment, the first peripheral region 143, the second peripheral region 144, and the third peripheral region 145 of the flexible substrate 140I respectively have a second edge 140b, a third edge 140c, and a fourth edge 140d of the flexible substrate 140I. In this embodiment, the second edge 130b of the conductive release layer 130 is offset from the second edge 140b of the flexible substrate 140I, and the fourth edge 130d of the conductive release layer 130 is offset from the fourth edge 140d of the flexible substrate 140I. Unlike the aforementioned flexible electronic device 10, in this embodiment, the third edge 140c of the flexible substrate 140I is offset from the third edge 130c of the conductive release layer 130.

[0138] Figure 31 This is a top view schematic diagram of a flexible electronic device 10J according to another embodiment of the present invention. Figure 32 This is a cross-sectional schematic diagram of a flexible electronic device 10J according to another embodiment of the present invention. Figure 32 correspond Figure 31 The section line XV-XV'. Figure 33 This is a cross-sectional schematic diagram of a flexible electronic device 10J according to another embodiment of the present invention. Figure 33 correspond Figure 31 The section line XVI-XVI'.

[0139] Figure 31 , Figure 32 and Figure 33 The flexible electronic device 10J and the aforementioned Figure 4 , Figure 1L and Figure 5 Similar to the flexible electronic device 10, the difference between the two is: Figure 31 , Figure 32 and Figure 33 The flexible electronic device 10J has a flexible substrate 140J and a component layer 150J with Figure 4 , Figure 1L and Figure 5 The flexible substrate 140 and component layer 150 of the flexible electronic device 10 are different.

[0140] Please refer to Figure 31 , Figure 32 and Figure 33 Specifically, in this embodiment, the component layer 150J does not include another pad region 154 of the component layer 150J, and the flexible substrate 140J does not include the third peripheral region 145 of the flexible substrate 140. In this embodiment, at least a portion of the first edge 140a of the flexible substrate 140 is substantially flush with at least a portion of the first edge 130a of the conductive release layer 130, and the second edge 130b of the conductive release layer 130 is offset from the second edge 140b of the flexible substrate 140. Unlike the aforementioned flexible electronic device 10, in this embodiment, the third edge 140c of the flexible substrate 140J is flush with the third edge 130c of the conductive release layer 130, and the fourth edge 130d of the conductive release layer 130 is flush with the fourth edge 140d of the flexible substrate 140.

Claims

1. A method for manufacturing a flexible electronic device, comprising: An insulating release layer is formed on a rigid substrate; A conductive release layer is formed on the insulating release layer; A flexible substrate is formed on the conductive release layer and the insulating release layer, wherein the flexible substrate has a release initiation region, an active region and a first peripheral region, the active region is located between the release initiation region and the first peripheral region, and the release initiation region and the active region of the flexible substrate are located above the conductive release layer. A component layer is formed on the flexible substrate, wherein the component layer has an active component area and a pad area, the active component area of ​​the component layer is located on the active area of ​​the flexible substrate, and the pad area of ​​the component layer is located on the first peripheral area of ​​the flexible substrate. The flexible substrate and the conductive release layer are cut along a first cutting path on the release initiation area of ​​the flexible substrate to form a first edge of the flexible substrate and at least a portion of the first edge of the conductive release layer, wherein the at least portion of the first edge of the flexible substrate is substantially flush with the at least portion of the first edge of the conductive release layer. The conductive release layer and the insulating release layer are separated along the release direction, and the first peripheral area of ​​the flexible substrate and the insulating release layer are separated to expose the bottom surface of the conductive release layer and the bottom surface of the first peripheral area of ​​the flexible substrate, wherein the release direction points from at least a portion of the first edge of the flexible substrate to the first peripheral area of ​​the flexible substrate. A back film is formed on the bottom surface of the conductive release layer and on the bottom surface of the first peripheral region of the flexible substrate; as well as The flexible substrate is cut along a second cleaving path on the first peripheral region of the flexible substrate to form a second edge of the flexible substrate, wherein the conductive release layer has a second edge disposed opposite to the first edge of the conductive release layer, and at least a portion of the second edge of the conductive release layer is offset from the second edge of the flexible substrate.

2. The method of manufacturing a flexible electronic device as claimed in claim 1, wherein the second dicing is outside the conductive release layer, and the second edge of the conductive release layer is completely offset from the second edge of the flexible substrate.

3. The method of manufacturing a flexible electronic device as claimed in claim 1, wherein the conductive release layer has at least one first opening, a first solid and a second solid, the first solid defining the at least one first opening, the first peripheral region of the flexible substrate located on the at least one first opening and the first solid of the conductive release layer, and the active region of the flexible substrate located on the second solid of the conductive release layer.

4. The method of manufacturing a flexible electronic device as claimed in claim 3, wherein the second dicing is located on the at least one first opening and the first entity of the conductive release layer; while cutting the flexible substrate along the second dicing on the first peripheral region of the flexible substrate to form the second edge of the flexible substrate, the first entity of the conductive release layer is further cut to form the edge of the first entity of the conductive release layer; the second edge of the conductive release layer includes the edge of the first entity of the conductive release layer and the edge of the at least one first opening, a portion of the second edge of the flexible substrate is substantially flush with the edge of the first entity of the conductive release layer, and another portion of the second edge of the flexible substrate is offset from the edge of the at least one first opening.

5. The method of manufacturing a flexible electronic device as claimed in claim 4, wherein the at least one first opening of the conductive release layer has a corner, and the radius of curvature of the corner is greater than 0.5 mm.

6. The method of manufacturing a flexible electronic device as claimed in claim 4, wherein the at least one first opening of the conductive release layer is a plurality of first openings, the adjacent first openings are spaced apart by a distance greater than or equal to 1 mm.

7. A flexible electronic device, comprising: A conductive release layer having opposing first and second edges; A flexible substrate is disposed on the conductive release layer, wherein the flexible substrate has an active region and a first peripheral region, the active region of the flexible substrate is located on the conductive release layer, at least a portion of the first peripheral region of the flexible substrate is located outside the conductive release layer, the flexible substrate has opposing first edges and second edges, at least a portion of the first edge of the flexible substrate is substantially flush with at least a portion of the first edge of the conductive release layer, and at least a portion of the second edge of the conductive release layer is offset from the second edge of the flexible substrate; A component layer, wherein the component layer has an active component region and a pad region, the active component region of the component layer being located on the active region of the flexible substrate, and the pad region of the component layer being located on the first peripheral region of the flexible substrate; and A back film is disposed on the bottom surface of the conductive release layer and the bottom surface of the first peripheral region of the flexible substrate.

8. The flexible electronic device of claim 7, wherein the second edge of the conductive release layer is completely offset from the second edge of the flexible substrate.

9. The flexible electronic device of claim 7, wherein the conductive release layer has at least one first opening, a first solid and a second solid, the first solid defining the at least one first opening, the first peripheral region of the flexible substrate being located on the at least one first opening and the first solid of the conductive release layer, and the active region of the flexible substrate being located on the second solid of the conductive release layer.

10. The flexible electronic device of claim 9, wherein the second edge of the conductive release layer includes the edge of the first entity of the conductive release layer and the edge of the at least one first opening, a portion of the second edge of the flexible substrate is substantially flush with the edge of the first entity of the conductive release layer, and another portion of the second edge of the flexible substrate is offset from the edge of the at least one first opening.

11. The flexible electronic device of claim 9, wherein the at least one first opening of the conductive release layer has a corner, and the radius of curvature of the corner is greater than 0.5 mm.

12. The flexible electronic device of claim 9, wherein the at least one first opening of the conductive release layer is a plurality of first openings, the adjacent first openings are spaced apart by a distance greater than or equal to 1 mm.

13. A method for manufacturing a flexible electronic device, comprising: An insulating release layer is formed on a rigid substrate; A conductive release layer is formed on the insulating release layer, wherein the conductive release layer includes at least a first thin portion, a first thick portion, a second thick portion and a third thick portion, the at least one first thin portion is disposed in the first thick portion, and the second thick portion is connected between the first thick portion and the third thick portion. A flexible substrate is formed on the conductive release layer and the insulating release layer, wherein the flexible substrate has a release initiation region, an active region and a first peripheral region, the active region is located between the release initiation region and the first peripheral region, the first peripheral region of the flexible substrate is disposed on at least one first thin portion and the first thick portion of the conductive release layer, the active region of the flexible substrate is located on the second thick portion of the conductive release layer, and the release initiation region of the flexible substrate is at least disposed on the third thick portion of the conductive release layer; A component layer is formed on the flexible substrate, wherein the component layer has an active component area and a pad area, the active component area of ​​the component layer is located on the active area of ​​the flexible substrate, and the pad area of ​​the component layer is located on the first peripheral area of ​​the flexible substrate. The third thick portion of the flexible substrate and the conductive release layer is cut along the first cutting path on the release initiation area of ​​the flexible substrate to form at least a portion of the first edge of the flexible substrate and the first edge of the conductive release layer, wherein at least a portion of the first edge of the flexible substrate is substantially flush with at least a portion of the first edge of the conductive release layer. The conductive release layer and the insulating release layer are separated along the release direction to expose the bottom surface of the conductive release layer, wherein the release direction points from the first edge of the flexible substrate to the first peripheral area of ​​the flexible substrate. A back film is formed on the bottom surface of the conductive release layer; as well as The flexible substrate and the conductive release layer are cut along a second dicing path on the first peripheral region of the flexible substrate to form a second edge of the flexible substrate and a second edge of the conductive release layer, wherein the second edge of the flexible substrate and the second edge of the conductive release layer are substantially flush.

14. The method of manufacturing a flexible electronic device as claimed in claim 13, wherein the second edge of the conductive release layer includes the edge of the at least one first thin portion of the conductive release layer and the edge of the first thick portion of the conductive release layer, and the second edge of the flexible substrate is substantially flush with the edge of the at least one first thin portion of the conductive release layer and the edge of the first thick portion of the conductive release layer.

15. The method of manufacturing a flexible electronic device as claimed in claim 13, wherein the thickness of the first thick portion of the conductive release layer is greater than or equal to 0.15 μm and less than or equal to 0.2 μm, and the thickness of the at least one first thin portion of the conductive release layer is greater than or equal to 0.01 μm and less than or equal to 0.05 μm.

16. A flexible electronic device, comprising: A conductive release layer, wherein the conductive release layer includes at least a first thin portion, a first thick portion, a second thick portion and a third thick portion, the at least one first thin portion is disposed in the first thick portion, and the second thick portion is connected between the first thick portion and the third thick portion. A flexible substrate is disposed on the conductive release layer, wherein the flexible substrate has an active region and a first peripheral region, the active region of the flexible substrate is located on the second thick portion of the conductive release layer, and the first peripheral region of the flexible substrate is located on the at least one first thin portion and the first thick portion of the conductive release layer. A component layer, wherein the component layer has an active component region and a pad region, the active component region of the component layer being located on the active region of the flexible substrate, and the pad region of the component layer being located on the first peripheral region of the flexible substrate; and The back film is disposed on the bottom surface of the conductive release layer.

17. The flexible electronic device of claim 16, wherein at least a portion of the first edge of the flexible substrate is substantially flush with the edge of the third thick portion of the conductive release layer.

18. The flexible electronic device of claim 16, wherein the second edge of the conductive release layer includes the edge of the at least one first thin portion of the conductive release layer and the edge of the first thick portion of the conductive release layer, and the second edge of the flexible substrate is substantially flush with the edge of the at least one first thin portion of the conductive release layer and the edge of the first thick portion of the conductive release layer.

19. The flexible electronic device of claim 16, wherein the thickness of the first thick portion of the conductive release layer is greater than or equal to 0.15 μm and less than or equal to 0.2 μm, and the thickness of the at least one first thin portion of the conductive release layer is greater than or equal to 0.01 μm and less than or equal to 0.05 μm.

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