An etching process and apparatus for thin film microstrip circuits

Abstract

This invention discloses an etching process and equipment for thin-film microstrip circuits, relating to the field of etching technology. The device includes an L-shaped base with a configuration box on one side of its top. The configuration box contains a proportioning mechanism, and a drying chamber contains a rinsing and drying mechanism. In the proportioning mechanism, a groove is provided on one side of each of the two limiting bars. A friction layer is provided at the top center of the groove, with one end of the friction layer abutting against one end of the groove. A pressure block is fixedly connected to the bottom end of the friction layer near the bottom of the groove. In the rinsing and drying mechanism, multiple rotating blades are inclined at equal intervals inside the placement plate. Multiple water spray pipes are provided at both the top and bottom of the drying chamber. This invention provides an etching process and equipment for thin-film microstrip circuits that eliminates the need for repeated manual addition of raw materials, effectively improving work efficiency while reducing environmental contamination of the etching solution and increasing the substrate rinsing and drying areas.

Description

Technical Field

[0001] This invention relates to the field of etching technology, and in particular to an etching process and equipment for thin-film microstrip circuits. Background Technology

[0002] The fabrication process of thin-film microstrip circuits includes sputtering, surface treatment, photolithography, etching, dicing, and testing. Etching refers to the removal of the film layer from non-circuit regions. After etching, the thin-film microstrip circuit is finally formed. Depending on the different applications of the thin-film microstrip circuit, the film layer structure varies significantly, and different film layer structures require different etching processes. Currently, the most widely used film layer structures are the TiW / Au system and the Cr / Cu / Au system.

[0003] The manufacturing process of Ti / Au thin-film microstrip circuits typically begins with sputtering a seed layer of TiW and Au, followed by photolithography on a gold layer. Then, electroplating with adhesive is used to thicken the gold layer in the patterned areas. Next, a dry etching process is used to etch away the Au layer in the non-patterned areas, followed by wet etching to remove the TiW layer, resulting in the final circuit shape. The manufacturing process of Cr / Cu / Au thin-film microstrip circuits typically begins with sputtering a Cr and Cu layer, followed by photolithography on a copper layer. Then, wet etching is used to remove the Cu and Cr layers in the non-patterned areas, followed by electroplating a gold layer, resulting in the final circuit shape.

[0004] However, in existing etching processes, three different etching solutions are used to etch the Au, Cu, and Cr layers. Since the etching solution for the copper layer cannot etch the gold layer, and the copper layer is below the gold layer, the lateral corrosion of the copper layer after etching causes the gold layer to collapse at both edges of the microstrip circuit lines, thus affecting the quality of the thin-film microstrip circuit. Therefore, existing equipment etches the Au and Cu layers as a whole in one etching solution and controls the etching process to ensure that the gold and copper layers have equal amounts of lateral corrosion. This completely solves the problem of gold layer collapse at both edges of the circuit lines during wet etching of Cr / Cu / Au system thin-film circuits.

[0005] However, existing etching equipment is quite complicated in terms of preparing the etching solution. It requires manual mixing of raw materials and continuous stirring in the beaker. During the external stirring process, the beaker will react with impurities in the air to form other products that affect the quality of the etching solution. Furthermore, this will result in poor etching effect on the substrate in the subsequent process. In addition, the treatment area of ​​the substrate is not large enough and the treatment effect is not excellent in the subsequent rinsing and drying process. Summary of the Invention

[0006] The main objective of this invention is to provide an etching process and equipment for thin-film microstrip circuits, which can effectively solve the problems of existing etching equipment in the background art, which is complicated in preparing the etching solution, requires manual proportioning of raw materials and continuous addition and stirring in the beaker, and the beaker reacts with impurities in the air during the external stirring process to form other products that affect the quality of the etching solution, resulting in poor etching effect on the substrate in the subsequent process, and insufficient treatment area and poor treatment effect on the substrate in the subsequent rinsing and drying process.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows: An etching process and equipment for thin film microstrip circuits according to the present invention includes an L-shaped base, a configuration box is provided on one side of the top of the L-shaped base, a proportioning mechanism is provided inside the configuration box, a heating chamber and a drying chamber are provided on the other side of the top of the L-shaped base, and a rinsing and drying mechanism is provided inside the drying chamber.

[0008] The proportioning mechanism includes a bidirectional motor, a triangular block, and limiting strips. Two limiting strips are inclinedly arranged inside the mixing box. A groove is provided on one side of each limiting strip. A friction layer is provided at the top center of the groove, with one end of the friction layer abutting one end of the groove. A pressure-boosting block is fixedly connected to the bottom end of the friction layer near the bottom of the groove. The bottom end of the triangular block is inclined, and the inclination angle of the limiting strip is the same as the inclination angle of the bottom end of the triangular block. Engaging strips are inclinedly arranged on both sides of the triangular block. Multiple protrusions are arranged at equal intervals at the top of the engaging strips. A resistance layer is provided at the bottom of the engaging strips, and support columns are fixedly connected to the bottom ends of the protrusions. The bottom ends of the support columns extend into the interior of the engaging strips. The engaging strips are slidably connected to the grooves. A first proportioning tank and a second proportioning tank are respectively arranged along the same horizontal line at the top of the mixing box. A second and a third proportioning tank are provided. A bidirectional motor is installed on the side of the third proportioning tank away from the second proportioning tank. A rotating shaft is provided at the bottom of the bidirectional motor. A rotating disk is fixedly connected to the bottom of the rotating shaft. A movable column is rotatably connected to the side of the rotating disk. A rotating ball is provided at the bottom of the movable column. Multiple driven balls are fixedly connected to the side of the rotating ball. A first feed pipe is fixedly connected to the bottom of the first proportioning tank. A second feed pipe is fixedly connected to the bottom of the second proportioning tank. The bottom of the second feed pipe is located directly above the middle of the chute. A third feed pipe is fixedly connected to the bottom of the third proportioning tank. A flexible tube is connected to the middle of the third feed pipe. An elastic block is provided on the surface of the flexible tube. A driven disk is fixedly connected to the surface of the rotating shaft. A connecting strip is provided on the surface of the driven disk. One end of the connecting strip is connected to the surface of the driven disk.

[0009] The rinsing and drying mechanism includes a water spray pipe, an airflow nozzle, a placement plate, and an air supply pipe. The front of the drying chamber has an opening / closing door, and a placement plate is fixedly connected to one side of the door. One end of the placement plate contacts the inner wall of the drying chamber. Multiple rotating blades are inclined at equal intervals inside the placement plate, and a movable shaft is rotatably connected to the center of each rotating blade. Multiple water spray pipes are provided at both the top and bottom of the drying chamber. An air supply pipe is installed inside the outer shell of the drying chamber. Multiple airflow nozzles are symmetrically arranged at the left and right ends of the drying chamber, and the air supply pipe is connected to the multiple airflow nozzles. Multiple water leakage holes are opened at the bottom of the drying chamber. A collection chamber is provided near the top of the L-shaped base, close to the drying chamber.

[0010] Preferably, an extension plate is provided on one side of the top of the configuration box, two cylinders are provided at the top of the extension plate, a telescopic column is fixedly connected to the bottom of the cylinder, a flexible rope is fixedly connected to the bottom of the telescopic column, a placement block is fixedly connected to the bottom of the flexible rope, a trapezoidal block is fixedly connected to the bottom of the placement block, and multiple placement holes are provided at equal intervals inside the trapezoidal block.

[0011] Preferably, a partition plate is provided in the middle of the heating chamber, and heating devices are fixedly connected to both sides of the bottom end of the partition plate. An oil bath is provided at the top of the heating device, and a temperature sensor is provided on one side of the oil bath. Both oil baths are provided with a top cover.

[0012] Preferably, the top of the triangular block is provided with a placement groove, and each of the four sides of the placement groove is provided with a limiting block. Each of the limiting blocks is provided with an elastic component on one side, and a beaker is placed inside the placement groove.

[0013] Preferably, the bottom end of the third feed pipe is inclined, and the distance from the bottom end of the third feed pipe to the inner wall of the configuration box is less than the inner diameter of the beaker.

[0014] Preferably, the distance from the bottom end of the snap-fit ​​strip to the top end of the protrusion is less than the height of the slide groove, and the distance from the bottom end of the snap-fit ​​strip to the top end of the protrusion is equal to the distance from the bottom end of the slide groove to the bottom end of the friction layer, and the distance from the bottom end of the snap-fit ​​strip to the top end of the protrusion is greater than the distance from the bottom end of the slide groove to the bottom end of the pressure block.

[0015] Preferably, the elastic component includes a spring and an elastic post, one end of the elastic post is fixedly connected to the limiting block, and the surface of the elastic post is provided with a spring.

[0016] Preferably, the configuration box is provided with doors at both the left and right ends, and the height of the doors is greater than the height of the beaker.

[0017] An etching process for thin-film microstrip circuits, the specific steps of which are as follows:

[0018] Step 1: Prepare a ferrite substrate and perform cleaning, sputtering, gold plating, and photolithography in sequence;

[0019] Step 2: Prepare the common etching solution for Au / Cu films: Take a 500ml beaker and fill it with 300ml of deionized water through the first feed tube. Weigh 600g of potassium iodide and 120g of iodine and introduce them into the beaker through the second and third feed tubes respectively. Use a bidirectional motor to control the rotation of the rotating ball and stir until the solid dissolves. Place the beaker containing the etching solution into an oil bath and use a heating device to control the solution temperature at 115-120℃.

[0020] Step 3: Place the substrate to be etched into the placement block, first immerse it in the Au / Cu co-etching solution, wait 5-6 seconds and then take it out immediately, place it in the placement plate, rinse it clean under the deionized water sprayed from the water spray pipe, and blow the moisture off the surface of the substrate with the airflow nozzle.

[0021] Step 4: Place the substrate in another oil bath and use the Cr etching solution to etch chromium. Then rinse and dry the substrate.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] 1. In this invention, through the setting of the proportioning mechanism, two limiting strips are inclinedly arranged inside the mixing box. A sliding groove is provided on one side of the two limiting strips. A friction layer is provided at the top of the middle part of the sliding groove. One end of the friction layer is attached to one end of the sliding groove. A pressure block is fixedly connected to the bottom end of the friction layer near the bottom end of the sliding groove. The bottom end of the triangular block is inclined, and the inclination angle of the limiting strip is the same as the inclination angle of the bottom end of the triangular block. Both sides of the triangular block are inclinedly provided with locking strips, which are slidably connected to the sliding groove. When the triangular block is located at the top of the sliding groove, there is a certain friction between the triangular block and the sliding groove. The weight of the triangular block plus the beaker cannot generate sufficient power in the direction of friction. At this time, an appropriate amount of deionized water can be added into the beaker through the first proportioning tank and the first feed pipe. After the deionized water is added, at this time... The weight of the beaker increases, slightly exceeding the frictional force between the retaining strip and the slide, causing it to move downwards. Since the top of the retaining strip has multiple protrusions at equal intervals, and the middle top of the slide has a friction layer with one end fitting against the other, when the beaker reaches the friction layer, the protrusions contact the friction layer, increasing the frictional force. At this point, the frictional force again exceeds the force exerted by the beaker and the triangular block, causing the beaker to stop. Then, an appropriate amount of potassium iodide is added to the second mixing tank and the second feed pipe. After the potassium iodide is added, the weight of the beaker increases again, slightly exceeding the frictional force between the retaining strip and the slide, causing it to move downwards again. When it reaches the pressure block, the frictional force exceeds the force exerted, causing it to stop again. This eliminates the need for repeated manual addition of raw materials, effectively improving work efficiency and reducing environmental contamination of the etching solution.

[0024] 2. In this invention, through the arrangement of a bidirectional cylinder and a rotating ball in the proportioning mechanism, a rotating shaft is provided at the bottom of the bidirectional motor, and a rotating disk is fixedly connected to the bottom of the rotating shaft. A movable column is rotatably connected to the side of the rotating disk, and a rotating ball is provided at the bottom of the movable column. Multiple driven balls are fixedly connected to the side of the rotating ball. The rotating shaft can drive the movable column to rotate, and the movable column moves up and down in the direction of rotation of the bidirectional motor. In this process, it drives the rotating ball and the driven balls to move. Furthermore, a third feed pipe is fixedly connected to the bottom of the third proportioning tank, and a flexible tube is connected to the middle of the third feed pipe. An elastic block is provided on the surface of the flexible tube, and a driven disk is fixedly connected to the surface of the rotating shaft. A connecting belt is provided on the surface of the driven disk, and one end of the connecting belt is connected to the surface of the driven disk. When the movable column moves up and down, it will drive the elastic block to deform, thereby causing the flexible tube to close or open. In this way, during the process of the ball stirring the material in the beaker, elemental iodine will be continuously added. The addition of small amounts multiple times can effectively improve the stirring efficiency, thereby improving the quality of the etching solution.

[0025] 3. In this invention, the rinsing and drying mechanism is designed with multiple rotating blades arranged at equal intervals inside the placement plate. Each rotating blade is rotatably connected to a movable shaft in the middle, allowing a substrate to be placed on the blades. This design enables water on the substrate to flow away quickly. Furthermore, multiple water spray pipes are provided at both the upper and lower ends of the drying chamber, and an air supply pipe is provided inside the outer shell of the drying chamber. Multiple airflow nozzles are symmetrically arranged at both the left and right ends of the drying chamber, and the air supply pipes are connected to the airflow nozzles. The upper and lower layers of water spray pipes can effectively improve the cleaning efficiency of the substrate. The multiple airflow nozzles blow air onto the substrate from multiple angles, thereby quickly dehydrating the substrate. In conjunction with the rotating blades, the blades are rinsed by deionized water and shake when blown by the airflow, causing the substrate to shake as well, increasing the rinsing area and the drying area. Attached Figure Description

[0026] Figure 1 This is a three-dimensional structural schematic diagram of an etching apparatus for thin-film microstrip circuits according to the present invention;

[0027] Figure 2 This is a cross-sectional view of the configuration box of an etching apparatus for thin-film microstrip circuits according to the present invention;

[0028] Figure 3 This is a three-dimensional structural schematic diagram of the placement block of an etching device for thin-film microstrip circuits according to the present invention.

[0029] Figure 4 This is a cross-sectional view of the drying chamber of an etching apparatus for thin-film microstrip circuits according to the present invention;

[0030] Figure 5 This is a cross-sectional view of the placement board of an etching apparatus for a thin-film microstrip circuit according to the present invention.

[0031] Figure 6 For the present invention Figure 2 Enlarged schematic diagram of the structure at point A in the diagram;

[0032] Figure 7 This is a cross-sectional view of the heating chamber of an etching apparatus for thin-film microstrip circuits according to the present invention.

[0033] Figure 8 This is a three-dimensional structural schematic diagram of the limiting strip of an etching device for a thin-film microstrip circuit according to the present invention;

[0034] Figure 9 For the present invention Figure 8 A magnified structural diagram at point B;

[0035] Figure 10 For the present invention Figure 8 A magnified structural diagram at point C;

[0036] Figure 11This is a three-dimensional structural diagram of the triangular block of an etching device for thin-film microstrip circuits according to the present invention.

[0037] Figure 12 This is a three-dimensional structural schematic diagram of the snap-fit ​​strip of an etching device for thin-film microstrip circuits according to the present invention;

[0038] Figure 13 This is a cross-sectional view of the triangular block of an etching apparatus for thin-film microstrip circuits according to the present invention.

[0039] In the diagram: 1. L-shaped base; 2. Mixing box; 3. First mixing tank; 4. Second mixing tank; 5. Third mixing tank; 6. Bidirectional motor; 7. Extension plate; 8. Cylinder; 9. Heating chamber; 10. Drying chamber; 11. Collection chamber; 12. Triangular block; 13. Limiting strip; 14. Beaker; 15. First feed pipe; 16. Second feed pipe; 17. Third feed pipe; 18. Rotating shaft; 19. Movable column; 20. Rotating disk; 21. Driven ball; 22. Rotating ball; 2 3. Placement block; 24. Trapezoidal block; 25. Water spray pipe; 26. Airflow nozzle; 27. Placement plate; 28. Air supply pipe; 29. ​​Drain hole; 30. Rotating blade; 31. Movable shaft; 32. Driven disc; 33. Connecting belt; 34. Elastic block; 35. Oil bath; 36. Heating device; 37. Slide groove; 38. Friction layer; 39. Pressurizing block; 40. Snap-fit ​​strip; 41. Protrusion block; 42. Limiting block; 43. Support column; 44. Resistance layer; 45. Elastic component. Detailed Implementation

[0040] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0041] In the description of this invention, it should be noted that the terms "upper," "lower," "inner," "outer," "front end," "rear end," "both ends," "one end," and "the other end," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0042] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installed," "equipped with," "connected," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0043] Please refer to Figure 1 As shown in Figure 13, this embodiment includes an L-shaped base 1. A configuration box 2 is provided on one side of the top of the L-shaped base 1. A proportioning mechanism is provided inside the configuration box 2. A heating chamber 9 and a drying chamber 10 are provided on the other side of the top of the L-shaped base 1. A rinsing and drying mechanism is provided inside the drying chamber 10. An extension plate 7 is provided on one side of the top of the configuration box 2. Two cylinders 8 are provided on the top of the extension plate 7. A telescopic column is fixedly connected to the bottom of the cylinder 8. A flexible rope is fixedly connected to the bottom of the telescopic column. A placement block 23 is fixedly connected to the bottom of the flexible rope. A trapezoidal block 24 is fixedly connected to the bottom of the placement block 23. Multiple placement holes are provided at equal intervals inside the trapezoidal block 24. When cleaning the substrate, the substrate can be placed on the placement holes. The placement holes restrict the movement of the substrate. The material of the placement block 23 is bamboo, which does not react, thereby increasing the reaction area of ​​the substrate.

[0044] The proportioning mechanism includes a bidirectional motor 6, a triangular block 12, and a limiting strip 13. Two limiting strips 13 are inclinedly arranged inside the proportioning box 2. A groove 37 is provided on one side of each limiting strip 13. A friction layer 38 is provided at the top center of the groove 37, with one end of the friction layer 38 fitting against one end of the groove 37. A pressure block 39 is fixedly connected to the bottom end of the friction layer 38 near the bottom of the groove 37. The bottom end of the triangular block 12 is inclined, and the inclination angle of the limiting strip 13 is the same as the inclination angle of the bottom end of the triangular block 12. A locking strip 40 is inclinedly arranged on both sides of the triangular block 12. Multiple protrusions 41 are arranged at equal intervals at the top of the locking strip 40. A resistance layer 44 is provided at the bottom end of the locking strip 40, and a support column 4 is fixedly connected to the bottom end of each of the multiple protrusions 41. 3. The bottom ends of multiple support columns 43 extend into the interior of the snap-fit ​​strip 40. The snap-fit ​​strip 40 is slidably connected to the slide groove 37. The top of the triangular block 12 is provided with a placement groove. Limiting blocks 42 are provided on all four sides of the placement groove. An elastic component 45 is provided on one side of each limiting block 42. The elastic component 45 includes a spring and an elastic column. One end of the elastic column is fixedly connected to the limiting block 42. A spring is provided on the surface of the elastic column. A beaker 14 is provided inside the placement groove. The distance from the bottom end of the snap-fit ​​strip 40 to the top end of the protrusion 41 is less than the height of the slide groove 37. The distance from the bottom end of the snap-fit ​​strip 40 to the top end of the protrusion 41 is equal to the distance from the bottom end of the slide groove 37 to the bottom end of the friction layer 38. The distance from the bottom end of the snap-fit ​​strip 40 to the top end of the protrusion 41 is greater than the distance from the bottom end of the slide groove 37 to the bottom end of the pressure block 39.

[0045] Both ends of the mixing tank 2 are equipped with doors, the height of which is greater than the height of the beaker 14. The top of the mixing tank 2 is equipped with a first mixing tank 3, a second mixing tank 4, and a third mixing tank 5, arranged along the same horizontal line. A bidirectional motor 6 is located on the side of the third mixing tank 5 furthest from the second mixing tank 4. A rotating shaft 18 is located at the bottom of the bidirectional motor 6, and a rotating disk 20 is fixedly connected to the bottom of the rotating shaft 18. A movable column 19 is rotatably connected to the side of the rotating disk 20, and a rotating ball 22 is located at the bottom of the movable column 19. Multiple driven balls 21 are fixedly connected to the side of the rotating ball 22. A first feed pipe 15 is fixedly connected to the bottom of the first mixing tank 3, and a second feed pipe 16 is fixedly connected to the bottom of the second mixing tank 4. The third feed pipe 17 is fixedly connected to the bottom of the third proportioning tank 5, which is located directly above the middle of the chute 37. The bottom of the third feed pipe 17 is inclined, and the distance from the bottom of the third feed pipe 17 to the inner wall of the mixing box 2 is less than the inner diameter of the beaker 14. When the triangular block 12 is at the top of the chute 37, there is a certain friction between the triangular block 12 and the chute 37. The weight of the triangular block 12 plus the weight of the beaker 14 cannot generate enough force in the direction of friction. At this time, an appropriate amount of deionized water can be added into the beaker 14 through the first proportioning tank 3 and the first feed pipe 15. After the deionized water is added, the weight of the beaker 14 increases, which is slightly greater than the friction between the retaining strip 40 and the chute 37, thus causing it to move downward. Due to the retaining strip... Multiple protrusions 41 are evenly spaced at the top of the 40. A friction layer 38 is provided at the top center of the slide groove 37. One end of the friction layer 38 is in contact with one end of the slide groove 37. When the beaker 14 moves to the friction layer 38, the protrusions 41 contact the friction layer 38, increasing the friction force. At this time, the friction force is greater than the power of the beaker 14 and the triangular block 12, and the beaker 14 stops moving. The second proportioning tank 4 and the second feed pipe 16 are controlled to add an appropriate amount of potassium iodide. After the potassium iodide is added, the weight of the beaker 14 increases, which is slightly greater than the friction force formed between the retaining strip 40 and the slide groove 37. As a result, the triangular block 12 moves downward again. When it slides to the pressure block 39, the friction force is greater than the power, and the triangular block 12 stops again. This can be done without manual intervention. The repeated addition of raw materials effectively improves work efficiency. A flexible tube is connected to the middle of the third feed pipe 17, and an elastic block 34 is provided on the surface of the flexible tube. A driven disk 32 is fixedly connected to the surface of the rotating shaft 18, and a connecting belt 33 is provided on the surface of the driven disk 32. One end of the connecting belt 33 is connected to the surface of the driven disk 32. The rotating shaft 18 can drive the movable column 19 to rotate. The movable column 19 moves up and down in the direction of rotation of the bidirectional motor 6. In this process, it drives the rotating ball 22 and the driven ball 21 to move. While the movable column 19 moves up and down, it will cause the elastic block 34 to deform, thereby causing the flexible tube to close or open. In this way, during the process of the ball stirring the material in the beaker 14, the third feed pipe 17 will continuously cycle open and close.Therefore, elemental iodine is continuously added in small amounts multiple times. This effectively improves the stirring efficiency, thereby enhancing the quality of the etching solution.

[0046] A partition plate is provided in the middle of the heating chamber 9. Heating devices 36 are fixedly connected to the bottom two sides of the partition plate. An oil bath 35 is provided at the top of the heating device 36. A temperature sensor is provided on one side of the oil bath 35. Both oil baths 35 are provided with a top cover. The oil bath 35 can be exposed by opening the top cover. One of the oil baths 35 contains chromium etching solution, and the heating device 36 will maintain the internal temperature of the oil bath 35 at 115-120℃.

[0047] The rinsing and drying mechanism includes a water spray pipe 25, an airflow nozzle 26, a placement plate 27, and an air supply pipe 28. A door is provided on the front of the drying chamber 10, and a placement plate 27 is fixedly connected to one side of the door. One end of the placement plate 27 contacts the inner wall of the drying chamber 10. Multiple rotating blades 30 are inclined at equal intervals inside the placement plate 27, and each rotating blade 30 is rotatably connected to a movable shaft 31 at its center. Multiple water spray pipes 25 are provided at both the upper and lower ends of the drying chamber 10. An air supply pipe 28 is provided inside the outer shell of the drying chamber 10. Multiple airflow nozzles are symmetrically arranged at both the left and right ends of the drying chamber 10. The head 26 and the air supply pipe 28 are connected to multiple airflow nozzles 26. Multiple water leakage holes 29 are opened at the bottom of the drying chamber 10. A collection chamber 11 is set at the top of the L-shaped base 1 near the top of the drying chamber 10. This arrangement allows water on the substrate to flow away quickly. The upper and lower water spray pipes 25 can effectively improve the cleaning efficiency of the substrate. Multiple airflow nozzles 26 blow air onto the substrate from multiple angles, thereby quickly dehydrating the substrate. In conjunction with the rotating blades 30, the rotating blades 30 will shake when rinsed by deionized water and blown by airflow, causing the substrate to shake as well, increasing the rinsing area and drying area.

[0048] An etching process for thin-film microstrip circuits, with the following specific steps:

[0049] Step 1: Prepare a ferrite substrate and perform cleaning, sputtering, gold plating, and photolithography in sequence. The cleaning step involves ultrasonically cleaning the ferrite substrate in a neutral cleaning solution to remove dirt from the substrate surface. The sputtering step involves preparing Cr and Cu layers on the clean substrate surface using magnetron sputtering. The gold plating step involves electroplating an Au layer onto the Cu layer surface. The photolithography step involves adhering the microstrip circuit pattern to the gold-plated substrate in the form of photoresist. The area covered and protected by the photoresist is the microstrip circuit, and the exposed part is the area to be etched. The resulting substrate has a Cr / Cu / Au film system and the circuit pattern area is protected by photoresist. Sputtering ensures that the Cu layer thickness is 4-5μm, and gold plating ensures that the Au layer thickness is 2-3μm.

[0050] Step 2: Prepare the common etching solution for Au / Cu film: Take a 500ml beaker 14 and fill it with 300ml of deionized water through the first feed tube 15. Weigh 600g of potassium iodide and 120g of iodine and introduce them into the beaker 14 through the second feed tube 16 and the third feed tube 17 respectively. Use the bidirectional motor 6 to control the rotating ball 22 to rotate and stir until the solid dissolves. Place the beaker 14 containing the etching solution into the oil bath 35 and use the heating device 36 to control the solution temperature at 115-120℃.

[0051] Step 3: Place the substrate to be etched into the placement block 23, first immerse it in the Au / Cu co-etching solution, wait 5-6 seconds and then take it out immediately, place it in the placement plate 27, rinse it clean under the deionized water sprayed from the water spray pipe 25, and blow the moisture off the surface of the substrate with the airflow nozzle 26.

[0052] Step 4: Place the substrate in another oil bath 35 and etch chromium in the Cr etching solution. Then rinse and dry the substrate.

[0053] The working principle of this invention is as follows: A ferrite substrate is prepared, and sequentially cleaned, sputtered, gold-plated, and photolithographically formed. Then, a common etching solution for the Au / Cu film is prepared: 300ml of deionized water is added to a 500ml beaker 14 through the first feed pipe 15. 600g of potassium iodide and 120g of iodine are weighed and introduced into the beaker 14 through the second feed pipe 16 and the third feed pipe 17, respectively. The rotating ball 22 is controlled by a bidirectional motor 6 to rotate, and the mixture is stirred until the solid dissolves. The beaker 14 containing the etching solution is then placed in an oil bath 3. In step 5, the solution temperature is controlled at 115-120℃ using the heating device 36. The substrate to be etched is placed in the placement block 23, and the cylinder 8 is controlled to immerse the placement block 23 and the substrate in the Au / Cu common etching solution. After waiting for 5-6 seconds, it is immediately taken out and placed in the placement plate 27. It is then rinsed clean under the deionized water sprayed from the water spray pipe 25, and the moisture on the surface of the substrate is blown dry using the air spray nozzle 26. Finally, the substrate is placed in another oil bath 35, where chromium is etched using the Cr etching solution. Then, the substrate is rinsed and dried.

[0054] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of this invention is defined by the appended claims and their equivalents.

Claims

1. An etching process and apparatus for thin film microstrip circuits, characterized by: Includes an L-shaped base (1), a configuration box (2) is provided on one side of the top of the L-shaped base (1), a proportioning mechanism is provided inside the configuration box (2), a heating chamber (9) and a drying chamber (10) are provided on the other side of the top of the L-shaped base (1), and a rinsing and drying mechanism is provided inside the drying chamber (10). The proportioning mechanism includes a bidirectional motor (6), a triangular block (12), and a limiting strip (13). Two limiting strips (13) are inclinedly arranged inside the proportioning box (2). A groove (37) is provided on one side of each limiting strip (13). A friction layer (38) is provided at the top center of the groove (37). One end of the friction layer (38) is in contact with one end of the groove (37). A pressure-boosting block (39) is fixedly connected to the bottom end of the friction layer (38) near the bottom end of the groove (37). The bottom end of the triangular block (12) is inclined, and the inclination angle of the limiting strip (13) is perpendicular to the triangular block (6). The corner blocks (12) have the same tilt angle at their bottom ends. Each of the two sides of the triangular block (12) is provided with a snap-fit ​​strip (40). The top of the snap-fit ​​strip (40) is provided with multiple protrusions (41) at equal intervals. The bottom of the snap-fit ​​strip (40) is provided with a resistance layer (44), and the bottom of each of the protrusions (41) is fixedly connected to a support column (43). The bottom of each of the support columns (43) extends into the interior of the snap-fit ​​strip (40). The snap-fit ​​strip (40) is slidably connected to the slide groove (37). The top of the configuration box (2) is provided with a first proportioning tank (3) along the same horizontal straight line. The first proportioning tank (3) consists of a second proportioning tank (4) and a third proportioning tank (5). A bidirectional motor (6) is located on the side of the third proportioning tank (5) away from the second proportioning tank (4). A rotating shaft (18) is located at the bottom of the bidirectional motor (6). A rotating disk (20) is fixedly connected to the bottom of the rotating shaft (18). A movable column (19) is rotatably connected to the side of the rotating disk (20). A rotating ball (22) is located at the bottom of the movable column (19). Multiple driven balls (21) are fixedly connected to the side of the rotating ball (22). A first feed pipe (15) is fixedly connected to the bottom of the first proportioning tank (3). The bottom end of the second proportioning tank (4) is fixedly connected to the second feed pipe (16), and the bottom end of the second feed pipe (16) is located directly above the middle of the chute (37). The bottom end of the third proportioning tank (5) is fixedly connected to the third feed pipe (17), and a flexible pipe is connected to the middle of the third feed pipe (17). An elastic block (34) is provided on the surface of the flexible pipe. A driven disc (32) is fixedly connected to the surface of the rotating shaft (18), and a connecting strip (33) is provided on the surface of the driven disc (32). One end of the connecting strip (33) is connected to the surface of the driven disc (32). The rinsing and drying mechanism includes a water spray pipe (25), an airflow nozzle (26), a placement plate (27), and an air supply pipe (28). A door is provided on the front of the drying chamber (10). A placement plate (27) is fixedly connected to one side of the door. One end of the placement plate (27) contacts the inner wall of the drying chamber (10). Multiple rotating blades (30) are inclined at equal intervals inside the placement plate (27). A movable shaft is rotatably connected to the center of each of the multiple rotating blades (30). 31) Multiple water spray pipes (25) are provided at both the upper and lower ends of the drying chamber (10). An air supply pipe (28) is provided inside the outer shell of the drying chamber (10). Multiple airflow nozzles (26) are symmetrically arranged at the left and right ends of the drying chamber (10). The air supply pipe (28) is connected to the multiple airflow nozzles (26). Multiple water leakage holes (29) are opened at the bottom of the drying chamber (10). A collection chamber (11) is provided at the top of the L-shaped base (1) near the drying chamber (10).

2. The etching process and equipment for a thin-film microstrip circuit according to claim 1, characterized in that: An extension plate (7) is provided on one side of the top of the configuration box (2). Two cylinders (8) are provided at the top of the extension plate (7). A telescopic column is fixedly connected to the bottom of the cylinder (8). A flexible rope is fixedly connected to the bottom of the telescopic column. A placement block (23) is fixedly connected to the bottom of the flexible rope. A trapezoidal block (24) is fixedly connected to the bottom of the placement block (23). Multiple placement holes are provided inside the trapezoidal block (24) at equal intervals.

3. The etching process and equipment for a thin-film microstrip circuit according to claim 2, characterized in that: A partition plate is provided in the middle of the heating chamber (9). Heating devices (36) are fixedly connected to the bottom two sides of the partition plate. An oil bath (35) is provided at the top of the heating device (36). A temperature sensor is provided on one side of the oil bath (35). Both oil baths (35) are provided with a top cover.

4. The etching process and equipment for a thin-film microstrip circuit according to claim 3, characterized in that: The top of the triangular block (12) is provided with a placement groove, and each of the four sides of the placement groove is provided with a limiting block (42). Each side of the limiting block (42) is provided with an elastic component (45), and a beaker (14) is provided inside the placement groove.

5. The etching process and equipment for a thin-film microstrip circuit according to claim 4, characterized in that: The bottom end of the third feed pipe (17) is inclined, and the distance from the bottom end of the third feed pipe (17) to the inner wall of the configuration box (2) is less than the inner wall diameter of the beaker (14).

6. The etching process and equipment for a thin-film microstrip circuit according to claim 5, characterized in that: The distance from the bottom of the snap-fit ​​strip (40) to the top of the protrusion (41) is less than the height of the groove (37), and the distance from the bottom of the snap-fit ​​strip (40) to the top of the protrusion (41) is equal to the distance from the bottom of the groove (37) to the bottom of the friction layer (38). The distance from the bottom of the snap-fit ​​strip (40) to the top of the protrusion (41) is greater than the distance from the bottom of the groove (37) to the bottom of the pressure block (39).

7. The etching process and equipment for a thin-film microstrip circuit according to claim 6, characterized in that: The elastic component (45) includes a spring and an elastic post. One end of the elastic post is fixedly connected to the limiting block (42), and the surface of the elastic post is provided with a spring.

8. The etching process and equipment for a thin-film microstrip circuit according to claim 7, characterized in that: The configuration box (2) is provided with doors on both the left and right ends, and the height of the doors is greater than the height of the beaker (14).

9. An etching process for thin-film microstrip circuits, characterized in that: The specific steps are as follows: Step 1: Prepare a ferrite substrate and perform cleaning, sputtering, gold plating, and photolithography in sequence; Step 2: Prepare a common etching solution for Au / Cu films: Take a 500ml beaker (14) and fill it with 300ml of deionized water through the first feed tube (15). Weigh 600g of potassium iodide and 120g of iodine and introduce them into the beaker (14) through the second feed tube (16) and the third feed tube (17) respectively. Use a bidirectional motor (6) to control the rotating ball (22) to rotate and stir until the solid dissolves. Place the beaker (14) containing the etching solution into an oil bath (35) and use a heating device (36) to control the solution temperature at 115-120℃. Step 3: Place the substrate to be etched into the placement block (23), first immerse it in the Au / Cu co-etching solution, wait 5-6 seconds and then take it out immediately, place it in the placement plate (27), rinse it clean under the deionized water sprayed from the water spray pipe (25), and blow the moisture off the surface of the substrate with the airflow nozzle (26). Step 4: Place the substrate in another oil bath (35), use the Cr etching solution to etch chromium, then rinse and dry the substrate.

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