High-voltage thyristor core etching machine
By designing the nozzle and blower mechanism of the high-pressure controllable silicon core etching machine, the problem of solution dripping after silicon wafer etching was solved, achieving efficient drying and improved cleanliness of the silicon wafer, and ensuring the safety of the working environment and the etching quality.
CN116230592BActive Publication Date: 2026-06-12WUXI THUNDER MICROELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUXI THUNDER MICROELECTRONICS CO LTD
- Filing Date
- 2023-03-15
- Publication Date
- 2026-06-12
AI Technical Summary
⚠Technical Problem
Existing etching machines lack a drying mechanism after silicon wafer etching, causing chemical solutions to drip and affect air quality and silicon wafer cleanliness.
⚗Method used
Design a high-pressure controllable silicon core etching machine that uses a combination of air nozzles and a blower mechanism. The air nozzles are moved and oscillated by an electric push rod, and a hot air blower with a multi-layer filter assembly dries the residual solution on the surface of the silicon wafer, ensuring cleanliness and safety.
🎯Benefits of technology
It effectively prevents chemical solution dripping, improves solution utilization, enhances silicon wafer cleanliness and etching quality, and ensures a safe working environment.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116230592B_ABST
Abstract
The application discloses a high-voltage thyristor core etching machine, and belongs to the etching machine field. The high-voltage thyristor core etching machine comprises an etching machine body, a controller is arranged on the top surface of the etching machine body, an etching cavity is arranged at the position close to the upper side of the inner cavity of the etching machine body, an etching mechanism is arranged on the etching cavity, a shell is fixedly connected to the rear wall of the etching machine body, an electric push rod is fixedly arranged on the rear wall of the inner cavity of the shell, the output end of the electric push rod penetrates through the rear wall of the etching machine body and is fixedly connected with a limiting plate, two supporting rods are fixedly connected with the rear wall of the limiting plate, the supporting rods penetrate through the shell and are movably connected with the shell, and a box body is movably connected with the front wall of the limiting plate. The application can realize the following effects: after the etching of a silicon wafer is completed, hot air can be sprayed out through an air nozzle to blow off and dry the chemical solution remaining on the silicon wafer, and the influence of the chemical solution dripping on the surrounding air quality is reduced.
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