Radio frequency signal amplification device and radio frequency front end module

Abstract

The radio frequency signal amplification device includes an amplification circuit, an impedance matching circuit, a frequency band detection circuit and a control circuit. The amplification circuit has an input end and an output end. The amplification circuit receives a radio frequency signal from the input end, amplifies the radio frequency signal, and generates an amplified radio frequency signal at the output end. The impedance matching circuit is coupled to the input end or the output end of the amplification circuit. The impedance matching circuit receives the radio frequency signal and provides an impedance matched with the radio frequency signal, or receives the amplified radio frequency signal and provides an impedance matched with the amplified radio frequency signal. The frequency band detection circuit determines a frequency band to which the radio frequency signal belongs. The control circuit adjusts the impedance of the impedance matching circuit according to the frequency band.

Description

[0001] This application is a divisional application of application number 2018114337569.3, entitled "Radio Frequency Signal Amplification Device and Radio Frequency Front-End Module", filed on November 28, 2018. Technical Field

[0002] This invention relates to a radio frequency signal amplification device, and more particularly to a radio frequency signal amplification device capable of detecting the frequency band of a radio frequency signal and adjusting its internal parameters accordingly. Background Technology

[0003] With the widespread adoption of the internet and mobile devices, people's demand for wireless communication is increasing, and radio frequency (RF) signal amplifiers are arguably the key components in wireless communication systems. RF signal amplifiers amplify RF signals of specific frequencies, enabling stable reception and information extraction to achieve wireless communication. However, different wireless communication methods often utilize different frequency bands for transmission to avoid mutual interference, and Wi-Fi wireless transmission includes both 2.4 GHz and 5 GHz frequency bands.

[0004] Generally, to meet the needs of different types of wireless communication, radio frequency (RF) signal amplifiers must be paired with different impedance circuits to receive RF signals in different frequency bands. Furthermore, the amplification factor and operating power of RF signal amplifiers may also differ for different types of wireless communication. Therefore, in existing technologies, electronic devices need to include multiple different RF signal amplifiers to handle different types of RF signals, increasing circuit area. Moreover, with technological advancements or different application areas, the frequency bands required for wireless communication may also vary, necessitating the redesign of the RF signal amplifiers in electronic devices, resulting in significant manpower and time costs. Summary of the Invention

[0005] An embodiment of the present invention provides a radio frequency signal amplification device. The radio frequency signal amplification device includes an amplification circuit, an impedance matching circuit, a frequency band detection circuit, and a control circuit.

[0006] The amplifier circuit has input and output terminals. It receives a radio frequency (RF) signal at the input terminal, amplifies it, and generates an amplified RF signal at the output terminal. An impedance matching circuit is coupled to either the input or output terminal of the amplifier circuit. The impedance matching circuit either receives the RF signal and provides an impedance that matches the RF signal, or receives the amplified RF signal and provides an impedance that matches the amplified RF signal. A frequency band detection circuit determines the frequency band to which the RF signal belongs. A control circuit adjusts the impedance of the impedance matching circuit according to the frequency band.

[0007] Another embodiment of the present invention provides a radio frequency (RF) front-end module. The RF front-end module includes a transmitter, a receiver, a common terminal, a switching circuit, and an RF signal amplification device.

[0008] The switching circuit couples the transmitter, receiver, and common terminal, allowing the common terminal to be selectively coupled to either the transmitter or receiver. The radio frequency signal amplification device is coupled between the switching circuit and the transmitter, or between the switching circuit and the receiver. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of a radio frequency signal amplification device according to an embodiment of the present invention.

[0010] Figure 2 This is a schematic diagram of a high-pass filter circuit according to an embodiment of the present invention.

[0011] Figure 3 This is a schematic diagram of a bandpass filter circuit according to an embodiment of the present invention.

[0012] Figure 4 This is a schematic diagram of an impedance matching circuit according to an embodiment of the present invention. Figure 1 .

[0013] Figure 5 This is a schematic diagram of an impedance matching circuit according to an embodiment of the present invention. Figure 2 .

[0014] Figure 6 This is a schematic diagram of an amplifier circuit according to an embodiment of the present invention. Figure 1 .

[0015] Figure 7 This is a schematic diagram of an amplifier circuit according to an embodiment of the present invention. Figure 2 .

[0016] Figure 8 This is a schematic diagram of a frequency band detection circuit according to an embodiment of the present invention. Figure 1 .

[0017] Figure 9 This is a schematic diagram of a frequency band detection circuit according to an embodiment of the present invention. Figure 2 .

[0018] Figure 10 This is a schematic diagram of a frequency band detection circuit according to an embodiment of the present invention. Figure 3 .

[0019] Figure 11 This is a schematic diagram of a radio frequency signal amplification device according to another embodiment of the present invention.

[0020] Figure 12 This is a schematic diagram of a radio frequency front-end module according to an embodiment of the present invention.

[0021] [Symbol Explanation]

[0022] 100, 400, 500A, 500B Radio Frequency Signal Amplification Devices

[0023] Amplifier circuits: 110, 210, 410A, 410B, 510A, 510B, 560A, 560B

[0024] Impedance matching circuits for 120A, 120B, 120, 120', 420A, 420B, 420C, 520A, 520B, 520C, 570A, 570B, and 570C

[0025] 122A High-Pass Filter Circuit

[0026] 122B, 1321 to 132K bandpass filter circuits

[0027] Detection circuits for frequency bands of 130, 230, 330, 430, 530, and 580 MHz

[0028] 140, 440, 540, 590 control circuits

[0029] SIG1 and SIG4 radio frequency signals

[0030] SIG2, SIG3, SIG5, SIG6 amplify RF signals

[0031] Capacitors VC1A, VC2A, VC3A, VC1B, VC2B, VC3B, VC4B, VC5B, VC1, VC1', and C1

[0032] L1A, L1B, L2B inductors

[0033] NV1 First System Voltage Terminal

[0034] NV2 Second System Voltage Terminal

[0035] 1121 to 112N, 212 amplifiers

[0036] 1141 to 114N, 214 bias circuits

[0037] Vref1 to VrefN, Vref reference voltage

[0038] Vb1 to VbN bias

[0039] Transistors M1 and M2

[0040] resistors R1 and R2

[0041] diodes D1, D2, and D3

[0042] 116 RF Choke Coil

[0043] NVC power signal terminal

[0044] 1341 to 134K, 234, 336 signal energy sensors

[0045] 1361 to 136K, 236 comparators

[0046] SIGT1 to SIGTK signal under test

[0047] VS1 to VSK, VS sensing voltage

[0048] 232 Variable Bandpass Filter Circuit

[0049] 332 Phase-Locked Detector

[0050] 332A frequency divider

[0051] 332B Phase Comparator

[0052] 332C Integrator

[0053] 332D Oscillator

[0054] 332E Downconverter Circuit

[0055] 334 Analog-to-Digital Converter

[0056] 338 delay units

[0057] SIGD frequency divider signal

[0058] SIGC Comparison Signal

[0059] SIGA Adjustment Signal

[0060] SIGV oscillation signal

[0061] VA Adjustable voltage

[0062] VP (Phase-locked voltage)

[0063] FS frequency signal

[0064] 500 RF front-end module

[0065] 550 switching circuit

[0066] TX sender

[0067] RX receiver

[0068] RFC common terminal Detailed Implementation

[0069] Figure 1This is a schematic diagram of a radio frequency signal amplification device 100 according to an embodiment of the present invention. The radio frequency signal amplification device 100 includes an amplification circuit 110, impedance matching circuits 120A and 120B, a frequency band detection circuit 130, and a control circuit 140.

[0070] The amplifier circuit 110 has an input terminal and an output terminal. The amplifier circuit 110 can receive the radio frequency signal SIG1 from the input terminal and generate an amplified radio frequency signal SIG2 at the output terminal after amplifying the radio frequency signal SIG1. In some embodiments of the present invention, the amplifier circuit 110 may include a power amplifier (PA) or a low noise amplifier (LNA).

[0071] Impedance matching circuit 120A can be coupled to the input terminal of amplifier circuit 110 and can provide an impedance matching the RF signal SIG1. Therefore, it can correspondingly receive the externally input RF signal SIG1 and guide the RF signal SIG1 to the input terminal of amplifier circuit 110. Impedance matching circuit 120B is coupled to the output terminal of amplifier circuit 110. Impedance matching circuit 120B can provide an impedance matching the amplified RF signal SIG2. Therefore, it can correspondingly receive the amplified RF signal SIG2 and output the amplified RF signal SIG2. That is, RF signal amplification device 100 can use impedance matching circuits 120A and 120B to ensure that the RF signal SIG1 of the corresponding frequency band can be received and guided to amplifier circuit 110, and to ensure that the amplified RF signal SIG2 generated by amplifier circuit 110 can be output smoothly. In another embodiment, one of the two impedance matching circuits 120A and 120B can be omitted from RF signal amplification device 100.

[0072] In some embodiments of the present invention, in order to support radio frequency signals of different frequency bands, the radio frequency signal amplification device 100 may also use the frequency band detection circuit 130 to determine the frequency band to which the radio frequency signal SIG1 belongs. In some embodiments of the present invention, the frequency band detection circuit 130 can determine which primary band the radio frequency signal SIG1 belongs to, such as the 2.4G or 5G frequency band. In some embodiments, the frequency band detection circuit 130 can further determine which sub-channel within the primary band the radio frequency signal SIG1 belongs to. The control circuit 140 can then adjust the impedance of the impedance matching circuits 120A and 120B according to the frequency band to which the radio frequency signal SIG1 belongs.

[0073] For example, in Figure 1In the embodiment, the impedance matching circuit 120A can filter out low-frequency noise, so the impedance matching circuit 120A may include a high-pass filter circuit 122A. The impedance matching circuit 120B can further filter out noise outside the frequency band of the amplified RF signal SIG2 so that the RF signal amplification device 100 can output the amplified RF signal SIG2. Therefore, the impedance matching circuit 120B may include a band-pass filtering circuit 122B.

[0074] Figure 2 This is a schematic diagram of a high-pass filter circuit 122A according to an embodiment of the present invention. Figure 3 This is a schematic diagram of a bandpass filter circuit 122B according to an embodiment of the present invention. Figure 2 In this circuit, the high-pass filter circuit 122A includes capacitors VC1A, VC2A, and VC3A, and an inductor L1A. Capacitors VC1A, VC2A, and VC3A are, for example, variable capacitors. Capacitor VC1A may have a first terminal and a second terminal. Capacitor VC2A has a first terminal and a second terminal, and the first terminal of capacitor VC2A may be coupled to the second terminal of capacitor VC1A. The second terminal of inductor L1A may be coupled to a first system voltage terminal NV1, which may receive a reference voltage in the system, such as, but not limited to, ground. Capacitor VC3A may be connected in parallel with inductor L1A. In this case, the control circuit 140 can change the impedance of the high-pass filter circuit 122A by adjusting the capacitance values ​​of capacitors VC1A, VC2A, and VC3A, so that the impedance matching circuit 120A can provide the impedance required for the radio frequency signal SIG1. In another embodiment of the invention, at least one of capacitors VC1A, VC2A, and VC3A is a variable capacitor. In one embodiment of the invention, the variable capacitor may include, for example, a switch and a capacitor connected in series with each other, or may further include another capacitor connected in parallel with the switch and capacitor connected in series.

[0075] exist Figure 3In the circuit, the bandpass filter circuit 122B includes inductors L1B and L2B, and capacitors VC1B, VC2B, VC3B, VC4B, and VC5B. Inductor L1B has a first terminal and a second terminal. Capacitors VC1B, VC2B, VC3B, VC4B, and VC5B are, for example, variable capacitors. Capacitor VC1B has a first terminal and a second terminal, and the first terminal of capacitor VC1B can be coupled to the second terminal of inductor L1B. Capacitor VC2B has a first terminal and a second terminal, and the first terminal of capacitor VC2B can be coupled to the second terminal of capacitor VC1B. The second terminal of capacitor VC2B can be coupled to the first system voltage terminal NV1. Inductor L2B has a first terminal and a second terminal, and the first terminal of inductor L2B can be coupled to the second terminal of capacitor VC1B. Capacitor VC3B has a first terminal and a second terminal, and the first terminal of capacitor VC3B can be coupled to the second terminal of inductor L2B. Capacitor VC4B has a first terminal and a second terminal. The first terminal of capacitor VC4B can be coupled to the second terminal of capacitor VC3B, and the second terminal of capacitor VC4B can be coupled to the first system voltage terminal NV1. Capacitor VC5B has a first terminal and a second terminal. The first terminal of capacitor VC5B can be coupled to the second terminal of capacitor VC3B. In this case, the control circuit 140 can change the impedance of the bandpass filter circuit 122B by adjusting the capacitance values ​​of capacitors VC1B, VC2B, VC3B, VC4B, and VC5B, so that the impedance matching circuit 120B can provide the impedance required to amplify the RF signal SIG2. In another embodiment of the present invention, at least one of capacitors VC1B, VC2B, VC3B, VC4B, and VC5B is a variable capacitor.

[0076] However, this invention does not limit the impedance matching circuits 120A and 120B to include... Figure 2 and Figure 3 The high-pass filter circuit 122A and band-pass filter circuit 122B are included. In some embodiments of the present invention, impedance matching circuits 120A and 120B may also be implemented using circuits with other structures. For example, Figure 4 This is a schematic diagram of an impedance matching circuit 120 according to an embodiment of the present invention. Figure 5 This is a schematic diagram of an impedance matching circuit 120' according to an embodiment of the present invention. When operating conditions permit, impedance matching circuits 120A and 120B can be... Figure 4 Impedance matching circuit 120 or Figure 5 The impedance matching circuit 120' in the middle is used for implementation.

[0077] exist Figure 4In this circuit, impedance matching circuit 120 includes an input terminal, an output terminal, and a capacitor VC1. Capacitor VC1 is, for example, a variable capacitor, having a first terminal and a second terminal. The first terminal of capacitor VC1 is coupled to the input and output terminals of impedance matching circuit 120, while the second terminal of capacitor VC1 is coupled to the first system voltage terminal NV1. In this case, control circuit 140 can adjust the capacitance value of capacitor VC1 according to the frequency band of the radio frequency signal SIG1 to change the impedance of impedance matching circuit 120.

[0078] exist Figure 5 In this circuit, impedance matching circuit 120' includes an input terminal, an output terminal, and a capacitor VC1'. Capacitor VC1' is, for example, a variable capacitor, having a first terminal and a second terminal. The first terminal of capacitor VC1' is coupled to the input terminal of impedance matching circuit 120', while the second terminal is coupled to the output terminal. In this case, control circuit 140 can adjust the capacitance value of capacitor VC1' according to the frequency band of the radio frequency signal SIG1 to change the impedance of impedance matching circuit 120'.

[0079] In some embodiments of the present invention, in addition to adjusting the impedance matching of the radio frequency signal amplification device 100 according to the frequency band to which the radio frequency signal SIG1 belongs, the control circuit 140 can further adjust the gain, harmonic filtering frequency, noise filtering frequency, or any combination thereof of the radio frequency signal amplification device 100.

[0080] For example, in Figure 1 In this embodiment, the amplification circuit 110 of the radio frequency signal amplification device 100 may include a plurality of amplifiers, and the control circuit 140 may enable a predetermined number of amplifiers in the amplification circuit 110 according to the frequency band to which the radio frequency signal SIG1 belongs and / or the operating mode of the radio frequency signal amplification device 100 (e.g., but not limited to low power mode or high power mode). That is, the control circuit 140 can adjust the number of amplifiers enabled in the amplification circuit 110 according to the frequency band to which the radio frequency signal SIG1 belongs and / or the operating mode of the radio frequency signal amplification device 100, thereby adjusting the operating power and gain of the radio frequency signal amplification device 100.

[0081] Figure 6 This is a schematic diagram of an amplifier circuit 110 according to an embodiment of the present invention. Figure 6In this circuit, amplifier circuit 110 includes a plurality of amplifiers 1121 to 112N and a plurality of bias circuits 1141 to 114N. Bias circuits 1141 to 114N can provide amplifiers 1121 to 112N with corresponding bias voltages Vb1 to VbN based on a plurality of reference voltages Vref1 to VrefN. Control circuit 140 can control whether to enable the corresponding amplifiers by providing the required reference voltages Vref1 to VrefN to the bias circuits 1141 to 114N. For example, control circuit 140 can provide reference voltages Vref1 to Vref2 to bias circuits 1141 to 1142, while not providing reference voltages to the other bias circuits. In this case, since only bias circuits 1141 and 1142 can correspondingly generate bias voltages Vb1 and Vb2, only amplifiers 1121 and 1122 will be enabled, while the other amplifiers will not be enabled. In this way, the control circuit 140 can enable the corresponding amplifiers 1121 to 112N by whether or not to provide the required reference voltages Vref1 to VrefN to the bias circuits 1141 to 114N.

[0082] In some embodiments, the reference voltages Vref1 to VrefN provided by the control circuit 140 may have the same voltage value; however, this invention is not limited thereto. The control circuit 140 may also adjust the reference voltages Vref1 to VrefN received by the bias circuits 1141 to 114N according to the frequency band to which the RF signal SIG1 belongs and / or the operating mode of the RF signal amplification device 100. Generally, when the bias voltages Vb1 to VbN received by the amplifiers 1121 to 112N are different, the linearity and efficiency of the amplifiers 1121 to 112N may also differ. For example, when a lower bias voltage is received, the linearity of the amplifiers 1121 to 112N may be worse, but the output efficiency may be better; conversely, when a higher bias voltage is received, the linearity of the amplifiers 1121 to 112N may be better, but the output efficiency may be worse. Therefore, by adjusting the reference voltages Vref1 to VrefN, the bias voltages Vb1 to VbN generated by the bias circuits 1141 to 114N can be adjusted accordingly, thereby controlling the operating state of the amplifier when it is enabled.

[0083] In some embodiments, the control circuit 140 can provide the same reference voltage to portions of the bias circuits 1141 to 114N to enable the corresponding amplifiers. However, the present invention is not limited to enabling the corresponding amplifiers with the same reference voltage. In some embodiments, for example when the amplifier circuit 110 needs to operate using different types of amplifiers simultaneously, some bias circuits in the bias circuits 1141 to 114N may receive different reference voltages. For example, the reference voltages Vref1 and Vref2 received by bias circuits 1141 and 1142 may have different voltage values. In this case, amplifiers 1121 and 1122 will be enabled by different bias voltages Vb1 and Vb2 and operate in different states.

[0084] exist Figure 6 In the amplifier circuit 110, a radio frequency choke (RFC) 116 may also be included. The RFC 116 has a first terminal and a second terminal. The first terminal of the RFC 116 may be coupled to a power signal terminal NVC, which may, for example, receive the operating voltage of the system. Furthermore, each amplifier 1121 to 112N has an input terminal and an output terminal. The input terminal of each amplifier 1121 to 112N may be coupled to an impedance matching circuit 120A, and the output terminal of each amplifier 1121 to 112N may be coupled to an impedance matching circuit 120B and the second terminal of the RFC 116.

[0085] In addition, Figure 6 In this configuration, each amplifier 1121 to 112N may have the same structure. Taking amplifier 1121 as an example, amplifier 1121 may include transistor M1. Transistor M1 has a first terminal, a second terminal, and a control terminal. The first terminal of transistor M1 may be coupled to the output terminal of amplifier 1121, the second terminal of transistor M1 may be coupled to the first system voltage terminal NV1, and the control terminal of transistor M1 may be coupled to the input terminal of amplifier 1121.

[0086] Furthermore, each bias circuit 1141 to 114N can also have the same structure. Taking bias circuit 1141 as an example, bias circuit 1141 can include diodes D1 and D2, resistor R1, and transistor M2. Diode D1 has a first terminal and a second terminal, and the second terminal of diode D1 can be coupled to the first system voltage terminal NV1. Diode D2 has a first terminal and a second terminal, and the second terminal of diode D2 can be coupled to the first terminal of diode D1. Resistor R1 has a first terminal and a second terminal, and the first terminal of resistor R1 can be coupled to the reference voltage terminal, while the second terminal of resistor R1 can be coupled to the first terminal of diode D2. The reference voltage terminal can receive a reference voltage Vref1 at a corresponding time period according to the control of control circuit 140. Transistor M2 has a first terminal, a second terminal, and a control terminal. The first terminal of transistor M2 can be coupled to the second system voltage terminal NV2 to receive another operating voltage in the system. The second terminal of transistor M2 can output a bias voltage Vb1, and the control terminal of transistor M2 can be coupled to the first terminal of diode D2. In other words, after the reference voltage Vref1 is divided by diodes D1 and D2 and resistor R1, it can operate transistor M2 in a stable state and output the required bias voltage Vb1.

[0087] However, the present invention does not limit the bias circuits 1141 to 114N to be... Figure 6 The structure shown is used for implementation. In some embodiments of the invention, the bias circuits 1141 to 114N may also be implemented in other ways. For example, in some embodiments of the invention, the first terminal of transistor M2 may not be coupled to the second system voltage terminal NV2, but instead be connected to the reference voltage terminal and receive the reference voltage Vref1.

[0088] exist Figure 6 In some embodiments, the amplifier circuit 110 may include a plurality of amplifiers 1121 to 112N, and the number of amplifiers 1121 to 112N to be enabled and the bias voltage received by amplifiers 1121 to 112N may be adjusted according to the frequency band to which the radio frequency signal SIG1 belongs to, to match the required mode of operation. However, the present invention is not limited to controlling the operating state of the amplifier circuit by selecting the number of enabled amplifiers and changing the bias voltage. In some embodiments of the present invention, the amplifier circuit 110 may simply select the number of enabled amplifiers 1121 to 112N without further adjusting the bias voltage of amplifiers 1121 to 112N when enabled. In this case, the operating state of the amplifier circuit 110 can still be controlled. Conversely, in some embodiments of the present invention, the amplifier circuit may also include a single amplifier, and the operating state of the amplifier circuit may be controlled by changing the bias voltage when enabled.

[0089] Figure 7This is a schematic diagram of an amplifier circuit 210 according to an embodiment of the present invention. The amplifier circuit 210 includes an amplifier 212 and a bias circuit 214. The amplifier circuit 210 has a similar structure to the amplifier circuit 110 and can operate according to similar principles. In some embodiments, the amplifier circuit 210 can replace the amplifier circuit 110 and be applied in the radio frequency signal amplification device 100. However, since the amplifier circuit 210 only includes a single amplifier 212, its main function is to adjust the voltage value of the reference voltage Vref received by the bias circuit 214 according to the frequency band to which the radio frequency signal SIG1 belongs or the operating mode of the radio frequency signal amplification device 100, thereby adjusting the operating state of the amplifier circuit 210.

[0090] Figure 8 This is a schematic diagram of a frequency band detection circuit 130 according to an embodiment of the present invention. The frequency band detection circuit 130 includes a plurality of bandpass filter circuits 1321 to 132K, a plurality of signal energy sensors 1341 to 134K, and a plurality of comparators 1361 to 136K, where K is a positive integer greater than 1. The bandpass filter circuits 1321 to 132K can receive the radio frequency signal SIG1 and allow signals of a specific frequency band to pass through. The input terminal of each signal energy sensor 1341 to 134K can be coupled to the corresponding bandpass filter circuit among the bandpass filter circuits 1321 to 132K to receive the signal to be measured passing through the corresponding bandpass filter circuit. For example, the input of signal energy sensor 1341 can be coupled to bandpass filter circuit 1321 to receive the measured signal SIGT1 passing through bandpass filter circuit 1321, while the input of signal energy sensor 134K can be coupled to bandpass filter circuit 132K to receive the measured signal SIGTK passing through bandpass filter circuit 132K. Signal energy sensors 1341 to 134K can output a sensing voltage according to the strength of the measured signal.

[0091] Each comparator 1361 to 136K can be coupled to a corresponding signal energy sensor among signal energy sensors 1341 to 134K, and can compare the sensed voltage output by the corresponding signal energy sensor with a reference voltage to output a discrimination signal. For example, after signal energy sensor 1341 outputs a sensed voltage VS1 based on the strength of the signal to be measured SIGT1, comparator 1361 can receive the sensed voltage VS1 generated by signal energy sensor 1341 and compare the sensed voltage VS1 with the reference voltage; similarly, after signal energy sensor 134K outputs a sensed voltage VSK based on the strength of the signal to be measured SIGTK, comparator 136K can receive the sensed voltage VSK generated by signal energy sensor 134K and compare the sensed voltage VSK with the reference voltage. In this case, if the sensed voltage VS1 is significantly greater than the reference voltage, it indicates that the signal under test SIGT1 received by the signal energy sensor 1341 is stronger. In other words, compared with other bandpass filter circuits, the center frequency band of the bandpass filter circuit 1321 may be closer to the frequency band to which the radio frequency signal SIG1 belongs. At this time, the frequency band detection circuit 130 can regard the center frequency band of the bandpass filter circuit 1321 as the frequency band to which the radio frequency signal SIG1 belongs, and output the frequency signal corresponding to the frequency band to which the radio frequency signal SIG1 belongs to the control circuit 140.

[0092] exist Figure 8 In the embodiments described, signal energy sensors 1341 to 134K may have the same structure. Taking signal energy sensor 1341 as an example, signal energy sensor 1341 may include diode D3, resistor R2, and capacitor C1. Diode D3 has a first terminal and a second terminal, and the first terminal of diode D3 may be coupled to the input terminal of signal energy sensor 1341. Resistor R2 has a first terminal and a second terminal, the first terminal of resistor R2 is coupled to the second terminal of diode D3, and the second terminal of resistor R2 may be coupled to the first system voltage terminal NV1. Capacitor C1 has a first terminal and a second terminal, the first terminal of capacitor C1 is coupled to the second terminal of diode D3 and outputs a sensing voltage VS1, and the second terminal of capacitor C1 may be coupled to the first system voltage terminal NV1. Diode D3 can rectify the signal SIGT1 to be measured, so that capacitor C1 is charged according to the strength of the signal SIGT1 to be measured, thereby outputting the sensing voltage VS1. However, the present invention does not limit signal energy sensors 1341 to 134K to be... Figure 8 The signal energy sensor 1341 is implemented using the structure of the signal energy sensor 1341. In other embodiments of the present invention, the designer may also implement the signal energy sensor 1341 to 134K using other circuit elements as needed.

[0093] In some embodiments of the present invention, the frequency band detection circuit 130 can receive the radio frequency signal SIG1 through a coupling element to avoid the frequency band detection circuit 130 interfering with the amplification operation of the radio frequency signal SIG1.

[0094] In addition, although Figure 8 In one embodiment, the frequency band detection circuit 130 can simultaneously compare the signal strength of K different frequency bands through K sets of bandpass filter circuits, signal energy sensors and comparators. However, the present invention is not limited thereto. In some embodiments of the present invention, the frequency band detection circuit 130 can also compare signals of different frequency bands in a time-division manner to reduce the number of components required. Figure 9 This is a schematic diagram of a frequency band detection circuit 230 according to an embodiment of the present invention. In some embodiments of the present invention, the frequency band detection circuit 230 can be applied in the radio frequency signal amplification device 100 and can replace the function of the frequency band detection circuit 130.

[0095] The frequency band detection circuit 230 includes a variable bandpass filter circuit 232, a signal energy sensor 234, and a comparator 236. The variable bandpass filter circuit 232 receives the radio frequency signal SIG1 and filters it across multiple bandpass frequency bands. For example, the variable bandpass filter circuit 232 can filter the signal at different center frequency bands in K different time periods and output the test signals SIGT1 to SIGTK respectively. The input of the signal energy sensor 234 can be coupled to the variable bandpass filter circuit 232 to receive the corresponding test signals SIGT1 to SIGTK passing through the variable bandpass filter circuit 232. The signal energy sensor 234 can output corresponding sensing voltages VS1 to VSK based on the intensity of the test signals SIGT1 to SIGTK. The comparator 236 can be coupled to the signal energy sensor 234 and may have a register to store the sensing voltages VS1 to VSK before comparing them to output a discrimination signal. For example, when comparator 236 determines that the sensed voltage VSK is significantly higher than other sensed voltages, it indicates that the frequency band to which the RF signal SIG1 belongs is close to the center frequency band corresponding to the variable bandpass filter circuit 232 in the Kth time period. In this way, the frequency band to which the RF signal SIG1 belongs can be determined, and the frequency signal corresponding to the frequency band to which the RF signal SIG1 belongs can be output to the control circuit 140.

[0096] Although both frequency band detection circuits 130 and 230 determine the frequency band to which the radio frequency signal SIG1 belongs through band filtering, the present invention is not limited thereto. In some embodiments of the present invention, the frequency band detection circuit can also use a phase lock detector to determine the frequency band to which the radio frequency signal SIG1 belongs.

[0097] Figure 10This is a schematic diagram of a frequency band detection circuit 330 according to an embodiment of the present invention. In some embodiments of the present invention, the frequency band detection circuit 330 can be applied in the radio frequency signal amplification device 100 and can replace the function of the frequency band detection circuit 130.

[0098] The frequency band detection circuit 330 includes a phase-locked loop (PLL) detector 332. The PLL detector 332 can output a corresponding phase-locked voltage VP based on the frequency of the radio frequency signal SIG1; that is, the PLL voltage VP corresponds to the frequency band to which the radio frequency signal SIG1 belongs. Figure 10 In this embodiment, to facilitate the determination of the frequency band corresponding to the phase-locked voltage VP, the frequency band detection circuit 330 may also include an analog-to-digital converter 334. The analog-to-digital converter 334 can output a corresponding digital signal according to the magnitude of the phase-locked voltage VP, so as to facilitate the subsequent operation of other circuits (such as the control circuit 140). However, the present invention does not limit the frequency band detection circuit 330 to include an analog-to-digital converter 334 to convert the phase-locked voltage VP into a digital signal. In other embodiments of the present invention, if other circuits can directly operate according to the phase-locked voltage VP, the frequency band detection circuit 330 may omit the analog-to-digital converter 334 and directly use the phase-locked voltage VP as the frequency signal FS and output it to the control circuit 140.

[0099] Furthermore, the phase-locked detector 332 may include a divider 332A, a phase comparator 332B, an integrator 332C, an oscillator 332D, and a down-converting circuit 332E. The divider 332A divides the radio frequency signal SIG1 to generate a divided signal SIGD. The phase comparator 332B compares the phases of the divided signal SIGD and the comparison signal SIGC to output an adjustment signal SIGA. The integrator 332C outputs an adjustment voltage VA based on the adjustment signal SIGA, while the oscillator 332D outputs an oscillation signal SIGV based on the adjustment voltage VA. The down-converting circuit 332E down-converts the oscillation signal SIGV to generate a comparison signal SIGC. In other words, the phase-locked detector 332 generates a gradually approaching comparison signal SIGC based on the divided signal SIGD of the radio frequency signal SIG1, and can output the steady-state adjustment voltage VA as the phase-locked voltage VP. In another embodiment, the adjustment signal SIGA, the oscillation signal SIGV, or the comparison signal SIGC can also be selected as the phase-locked voltage VP for output.

[0100] In some embodiments of the present invention, to ensure that when the output phase-locked voltage VP is achieved, the phase-locked detector 332 has generated a comparison signal SIGC that approximates the frequency-divided signal SIGD of the radio frequency signal SIG1, i.e., to ensure that the adjustment voltage VA has entered a steady state, the frequency band detection circuit 330 may further include a signal energy sensor 336 and a delay unit 338. The input terminal of the signal energy sensor 336 can receive the radio frequency signal SIG1, and the signal energy sensor 336 can output a sensing voltage VS according to the strength of the radio frequency signal SIG1. The delay unit 338 is coupled to the signal energy sensor 336 and the analog-to-digital converter 334. When the sensing voltage VS is greater than a predetermined value, the delay unit 338 can delay for a predetermined time, i.e., wait for the adjustment voltage VA to enter a steady state, before outputting a frequency signal FS corresponding to the frequency band of the radio frequency signal SIG1 according to the phase-locked voltage VP. For example, it may trigger the analog-to-digital converter 334 to convert the phase-locked voltage VP into a corresponding digital signal as the frequency signal FS and output it to the control circuit 140. The signal energy sensor 336 and Figure 8 The signal energy sensor 1341 has a similar structure and can operate based on a similar principle. However, the present invention does not limit the signal energy sensor 336 to... Figure 8 The signal energy sensor 336 is implemented using the structure of the signal energy sensor 1341. In other embodiments of the present invention, the designer may also use other circuit elements to implement the signal energy sensor 336 as needed.

[0101] exist Figure 1 In one embodiment, the radio frequency signal amplification device 100 primarily amplifies the radio frequency signal SIG1 through a single-stage amplification circuit 110; however, the present invention is not limited thereto. In other embodiments of the present invention, the radio frequency signal amplification device 100 may also include more stages of amplification circuits to amplify the radio frequency signal SIG1.

[0102] Figure 11 This is a schematic diagram of a radio frequency signal amplification device 400 according to another embodiment of the present invention. The radio frequency signal amplification device 400 has a similar structure to the radio frequency signal amplification device 100 and can operate according to similar principles. However, the radio frequency signal amplification device 400 may include amplification circuits 410A and 410B, impedance matching circuits 420A, 420B and 420C, frequency band detection circuit 430 and control circuit 440.

[0103] Amplifier circuit 410A has an input terminal and an output terminal. Amplifier circuit 410A receives the radio frequency (RF) signal SIG1 from its input terminal and amplifies SIG1 to generate an amplified RF signal SIG2 at its output terminal. Impedance matching circuit 420A is coupled to the input terminal of amplifier circuit 410A and provides an impedance matching SIG1. Therefore, it can correspondingly receive the externally input RF signal SIG1 and input SIG1 to the input terminal of amplifier circuit 410A. Impedance matching circuit 420B is coupled to the output terminal of amplifier circuit 410A. Impedance matching circuit 420B provides an impedance matching amplified RF signal SIG2, thus correspondingly receiving and outputting amplified RF signal SIG2. Amplifier circuit 410B is coupled to impedance matching circuit 420B to receive and amplify SIG2 to generate an amplified RF signal SIG3. Impedance matching circuit 420C receives the amplified RF signal SIG3 and provides an impedance matching SIG3.

[0104] exist Figure 11 In the embodiments, impedance matching circuits 420A and 420B may both include high-pass filter circuits, such as, but not limited to, [other types of filter circuits]. Figure 2 The high-pass filter 122A is shown. The impedance matching circuit 420C may include a band-pass filter circuit, such as, but not limited to, [other types]. Figure 3 The bandpass filter 122B is shown. In this case, the control circuit 440 can adjust the impedance of the impedance matching circuits 420A, 420B and 420C according to the frequency band to which the RF signal SIG1 belongs, so that the RF signal amplification device 400 can cooperate with the frequency band to which the RF signal SIG1 belongs, successfully receive the RF signal SIG1, and output the amplified RF signal SIG3.

[0105] Figure 12 This is a schematic diagram of a radio frequency front-end module (FEM) 500 according to an embodiment of the present invention. The FEM 500 includes a transmitter (TX), a receiver (RX), a common terminal (RFC), a switching circuit 550, and radio frequency signal amplification devices 500A and 500B. The switching circuit 550 is coupled to the transmitter (TX), the receiver (RX), and the common terminal (RFC), allowing the common terminal (RFC) to be selectively coupled to either the transmitter (TX) or the receiver (RX). The radio frequency signal amplification device 500A is coupled between the switching circuit 550 and the transmitter (TX), and the radio frequency signal amplification device 500B is coupled between the switching circuit 550 and the receiver (RX).

[0106] In another embodiment, the RF front-end module 500 may omit one of the two RF signal amplification devices, such as RF signal amplification device 500A coupled between the switching circuit 550 and the transmitting end TX, or RF signal amplification device 500B coupled between the switching circuit 550 and the receiving end RX. In another embodiment, one of the two RF signal amplification devices may be replaced by an amplification circuit, such as replacing RF signal amplification device 500A coupled between the switching circuit 550 and the transmitting end TX with amplification circuit 510A or 510B, or replacing RF signal amplification device 500B coupled between the switching circuit 550 and the receiving end RX with amplification circuit 560A or 560B. In another embodiment, RF signal amplification device 500A or 500B may have a similar structure to RF signal amplification device 100 and operate according to a similar principle.

[0107] In this embodiment, the radio frequency signal amplification device 500A or 500B may have a similar structure and operate according to a similar principle as the radio frequency signal amplification device 400. The radio frequency signal amplification device 500A includes amplification circuits 510A and 510B, impedance matching circuits 520A, 520B and 520C, a frequency band detection circuit 530, and a control circuit 540. The input terminal of the amplification circuit 510A is coupled to the transmitting terminal TX through the impedance matching circuit 520A, and the output terminal of the amplification circuit 510A is coupled to the switching circuit 550 through the impedance matching circuits 520B, 510B and 520C. The radio frequency signal amplification device 500B includes amplification circuits 560A and 560B, impedance matching circuits 570A, 570B and 570C, a frequency band detection circuit 580, and a control circuit 590. The input terminal of amplifier circuit 560A is coupled to switching circuit 550 through impedance matching circuit 570A, and the output terminal of amplifier circuit 560A is coupled to receiver RX through impedance matching circuit 570B, amplifier circuit 560B and impedance matching circuit 570C.

[0108] exist Figure 12 In this configuration, the RF front-end module 500 can use the switching circuit 550 to switch the transmission direction of the RF signal, allowing the transmitting end TX and the receiving end RX of the RF front-end module to share the same antenna module through the common terminal RFC. The control circuit 540 can control the switching circuit 550 according to the RF signal SIG1, so that the common terminal RFC is selectively coupled to the transmitting end TX through the output terminal of the amplifier circuit 510A, or coupled to the receiving end RX through the input terminal of the amplifier circuit 560A. The switching circuit 550 can be a single-pole double-throw (SP2T) switch.

[0109] For example, amplifier circuits 510A and 510B can be power amplifiers, and the radio frequency signal SIG1 is input to the transmitting end TX. In this case, amplifier circuit 510A amplifies the radio frequency signal SIG1 to generate an amplified radio frequency signal SIG2, while amplifier circuit 510B further generates an amplified radio frequency signal SIG3 based on the amplified radio frequency signal SIG2. Then, the signal is transmitted to the common terminal RFC through switching circuit 550 to be sent to the antenna module.

[0110] Conversely, amplifier circuits 560A and 560B can be low-noise amplifiers, and the amplified RF signal SIG6 is output from the receiver RX. In this case, switching circuit 550 can transmit the RF signal SIG4 received from the antenna module via the common terminal RFC to the RF signal amplification device 500B. At this time, frequency band detection circuit 580 will determine the frequency band to which the RF signal SIG4 belongs, and control circuit 590 will adjust the impedances corresponding to impedance matching circuits 570A, 570B, and 570C according to the frequency band to which the RF signal SIG4 belongs, so that amplifier circuit 560A can successfully receive RF signal SIG4 and generate amplified RF signal SIG5, and amplifier circuit 560B can successfully receive amplified RF signal SIG5 and generate amplified RF signal SIG6 for subsequent circuits to receive and analyze the information in the RF signal.

[0111] exist Figure 12 In this embodiment, the switching circuit 550 can be controlled by the control circuit 540. For example, when the frequency band detection circuit 530 detects an input RF signal SIG1, or determines that the frequency band to which the RF signal SIG1 belongs belongs to a preset frequency band, the control circuit 540 can correspondingly control the switching circuit 550 so that the amplified RF signal SIG3 can be transmitted to the common terminal RFC through the switching circuit 550. At this time, the RF signal amplification device 500A can perform the operation of the transmitting end.

[0112] Conversely, when the frequency band detection circuit 530 does not detect the input of the radio frequency signal SIG1, or determines that the frequency band to which the radio frequency signal SIG1 belongs does not belong to a preset frequency band, the control circuit 540 can control the switching circuit 550 to cut off the electrical connection between the impedance matching circuit 520C and the common terminal RFC, and conduct the electrical connection between the impedance matching circuit 570A and the common terminal RFC. At this time, the amplifier circuit 560A can receive the radio frequency signal SIG4 transmitted from the common terminal RFC, and the radio frequency signal amplification device 500B can perform the operation of the receiving end.

[0113] In summary, the RF signal amplification device and RF front-end module provided by the embodiments of the present invention can detect the frequency band of the RF signal through the frequency band detection circuit, and adjust the impedance of the impedance matching circuit according to the frequency band of the RF signal. This allows the RF signal amplification device to more flexibly support RF signals of different frequency bands, reduces the required hardware components, and also reduces repetitive design processes. Furthermore, in some embodiments of the present invention, the RF signal amplification device and RF front-end module can further adjust the number of enable amplifiers or adjust the bias voltage of the amplifier circuit according to the frequency band of the RF signal, so that the amplifier circuit can meet the power and linearity requirements of the application.

[0114] The above description is only a preferred embodiment of the present invention. All equivalent changes and modifications made in accordance with the claims of the present invention should be included within the scope of the present invention.

Claims

1. A radio frequency signal amplification device, characterized in that, Include: A first amplifier circuit has an input terminal and an output terminal, for receiving a radio frequency signal from the input terminal and amplifying it, and generating a first amplified radio frequency signal at the output terminal. A first impedance matching circuit is coupled to the input or output terminal of the first amplifier circuit to receive the radio frequency signal and provide an impedance that matches the radio frequency signal, or to receive the first amplified radio frequency signal and provide an impedance that matches the first amplified radio frequency signal. A frequency band detection circuit is used to determine the frequency band to which the radio frequency signal belongs; and A control circuit for adjusting the impedance of the first impedance matching circuit according to the frequency band; The first amplifier circuit includes a plurality of amplifiers; and The control circuit is further used to enable a predetermined number of amplifiers among the amplifiers of the first amplifier circuit according to the frequency band.

2. The radio frequency signal amplification device according to claim 1, characterized in that, The first impedance matching circuit is connected in series with the first amplifier circuit.

3. The radio frequency signal amplification device according to claim 1, characterized in that, The first amplifier circuit further includes: Multiple bias circuits are used to provide the corresponding multiple bias voltages required by these amplifiers based on multiple reference voltages; The control circuit enables the amplifiers by providing the reference voltages required by the bias circuits, and also adjusts the voltage values ​​of the reference voltages received by the bias circuits according to the frequency band.

4. The radio frequency signal amplification device according to claim 3, characterized in that, Among these bias circuits, at least two bias circuits receive two different reference voltages, thereby enabling two of the corresponding amplifiers.

5. The radio frequency signal amplification device according to claim 1, characterized in that, The first impedance matching circuit is coupled to the input terminal of the first amplifier circuit to receive the radio frequency signal and provide an impedance that matches the radio frequency signal. The radio frequency signal amplification device further includes: A second impedance matching circuit is coupled to the output terminal of the first amplifier circuit to receive the first amplified radio frequency signal and provide an impedance that matches the first amplified radio frequency signal. The control circuit is also used to adjust the impedance of the second impedance matching circuit according to the frequency band.

6. The radio frequency signal amplification device according to claim 5, characterized in that, The first impedance matching circuit includes a high-pass filter circuit, and the second impedance matching circuit includes a band-pass filter circuit.

7. The radio frequency signal amplification device according to claim 5, characterized in that, Also includes: A second amplifier circuit is coupled to the second impedance matching circuit to receive the first amplified radio frequency signal and to amplify the first amplified radio frequency signal to generate a second amplified radio frequency signal. and A third impedance matching circuit is used to receive the second amplified radio frequency signal and provide an impedance that matches the second amplified radio frequency signal; The control circuit adjusts the impedance of the first impedance matching circuit, the impedance of the second impedance matching circuit, and the impedance of the third impedance matching circuit according to the frequency band.

8. The radio frequency signal amplification device according to claim 7, characterized in that, The first impedance matching circuit includes a first high-pass filter circuit, the second impedance matching circuit includes a second high-pass filter circuit, and the third impedance matching circuit includes a band-pass filter circuit.

9. The radio frequency signal amplification device according to claim 1, characterized in that, The first impedance matching circuit includes: One input terminal; One output terminal; and A first variable capacitor has a first terminal coupled between the input terminal and the output terminal of the first impedance matching circuit, and a second terminal coupled to a first system voltage terminal. The control circuit is also used to adjust the first variable capacitor according to the frequency band.

10. The radio frequency signal amplification device according to claim 1, characterized in that, The first impedance matching circuit includes: One input terminal; One output terminal; A first variable capacitor has a first terminal coupled to the input terminal of the first impedance matching circuit and a second terminal coupled to the output terminal of the first impedance matching circuit. The control circuit is also used to adjust the first variable capacitor according to the frequency band.

11. The radio frequency signal amplification device according to claim 1, characterized in that, The detection circuit for this frequency band includes: Multiple bandpass filter circuits are used to receive the radio frequency signal; A plurality of signal energy sensors, each having an input terminal coupled to a corresponding bandpass filter circuit among the bandpass filter circuits to receive a test signal passing through the corresponding bandpass filter circuit, the signal energy sensor being used to output a sensing voltage according to the intensity of the test signal; and A plurality of comparators, each comparator being coupled to a corresponding signal energy sensor among the signal energy sensors, are used to compare a sense voltage output by the corresponding signal energy sensor with a reference voltage to output a discrimination signal.

12. The radio frequency signal amplification device according to claim 1, characterized in that, The detection circuit for this frequency band includes: A variable bandpass filter circuit is used to receive the radio frequency signal and filter the radio frequency signal in multiple bandpass frequency bands; A signal energy sensor has an input terminal coupled to the variable bandpass filter circuit to receive a plurality of corresponding test signals passing through the variable bandpass filter circuit. The signal energy sensor is used to output a plurality of corresponding sensing voltages according to the intensity of the test signals. and A comparator, coupled to the signal energy sensor, is used to compare the sensed voltages to output a discrimination signal.

13. The radio frequency signal amplification device according to claim 1, characterized in that, The detection circuit for this frequency band includes: A phase-locked detector is used to output a phase-locked voltage according to a frequency of the radio frequency signal, wherein the phase-locked voltage corresponds to a frequency band to which the radio frequency signal belongs.

14. The radio frequency signal amplification device according to claim 13, characterized in that, The phase-locked detector includes: A frequency divider is used to divide the radio frequency signal to generate a frequency-divided signal; A phase comparator is used to compare the phase of the frequency divider signal and a comparison signal to output an adjustment signal; an integrator is used to output an adjustment voltage based on the adjustment signal. An oscillator for outputting an oscillation signal according to the adjusted voltage; and A frequency converter circuit is used to downconvert the oscillation signal to generate the comparison signal.

15. The radio frequency signal amplification device according to claim 14, characterized in that, The phase-locked detector outputs the adjustment voltage as the phase-locked voltage.

16. The radio frequency signal amplification device according to claim 13, characterized in that, The detection circuit for this frequency band also includes: A signal energy sensor has an input terminal for receiving the radio frequency signal, and the signal energy sensor outputs a sensing voltage based on the strength of the radio frequency signal; and A delay unit, coupled to the signal energy sensor, is used to output a frequency signal based on the phase-locked voltage after a predetermined delay when the sensed voltage is greater than a predetermined value, wherein the frequency signal corresponds to the frequency band to which the radio frequency signal belongs.

17. The radio frequency signal amplification device according to claim 12, characterized in that, The signal energy sensor includes: A diode having a first terminal coupled to the input terminal of the signal energy sensor and a second terminal; a resistor having a first terminal coupled to the second terminal of the diode and a second terminal coupled to a first system voltage terminal; and A capacitor has a first terminal coupled to the second terminal of the diode and outputting the sensed voltage, and a second terminal coupled to the first system voltage terminal.

18. A radio frequency front-end module, characterized in that, Include: One sending end; One receiving end; One common end; A switching circuit is coupled to the transmitting end, the receiving end and the common end, so that the common end is selectively coupled to the transmitting end or the receiving end; as well as A first radio frequency signal amplification device is coupled between the switching circuit and the transmitting end, or coupled between the switching circuit and the receiving end; The first radio frequency signal amplification device includes: A first amplifier circuit has a first input terminal and a first output terminal, for receiving a first radio frequency signal from the first input terminal and amplifying it, and generating a first amplified radio frequency signal at the first output terminal. A first impedance matching circuit is coupled to the first input terminal or the first output terminal of the first amplifier circuit to receive the first radio frequency signal and provide a first impedance matching the first radio frequency signal, or to receive the first amplified radio frequency signal and provide a first impedance matching the first amplified radio frequency signal. A first frequency band detection circuit is used to determine the first frequency band to which the first radio frequency signal belongs; and A first control circuit is used to adjust the first impedance of the first impedance matching circuit according to the first frequency band; in, The first amplifier circuit includes a plurality of amplifiers; and The control circuit is further used to enable a predetermined number of amplifiers among the amplifiers of the first amplifier circuit according to the frequency band.

19. The radio frequency front-end module according to claim 18, characterized in that, The first impedance matching circuit is connected in series with the first amplifier circuit.

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