一种存储结构及其调控方法、存储器
By employing a five-layer storage structure and voltage regulation method, the problems of ferroelectric and antiferroelectric memories in terms of scale reduction and reliability are solved, realizing high-density integrated non-volatile multi-value storage with good noise and fatigue resistance characteristics.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BEIJING SUPERSTRING ACAD OF MEMORY TECH
- Filing Date
- 2021-12-02
- Publication Date
- 2026-07-17
AI Technical Summary
Existing ferroelectric and antiferroelectric memories face challenges in terms of scale reduction and reliability, and existing antiferroelectric memories suffer from high power consumption and insufficient fatigue resistance.
The storage structure employs a five-layer structure, including a first metal electrode, a first ferroelectric layer, an antiferroelectric layer, a second ferroelectric layer, and a second metal electrode. It can switch between four storage states by applying specific forward and reverse voltages. ZrO2 material is used as the antiferroelectric layer to improve fatigue resistance and breakdown characteristics.
It achieves miniaturization of the storage structure, has high noise immunity and fatigue resistance, and realizes non-volatile storage performance without external bias and multi-value storage of 2 bits/cell, making it suitable for high-density integration.
Smart Images
Figure CN116234321B_ABST